WO2003079542A1 - Circuit hyperfrequence - Google Patents

Circuit hyperfrequence Download PDF

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Publication number
WO2003079542A1
WO2003079542A1 PCT/JP2002/002517 JP0202517W WO03079542A1 WO 2003079542 A1 WO2003079542 A1 WO 2003079542A1 JP 0202517 W JP0202517 W JP 0202517W WO 03079542 A1 WO03079542 A1 WO 03079542A1
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WO
WIPO (PCT)
Prior art keywords
terminal
transistor
amplifier
emitter
microwave circuit
Prior art date
Application number
PCT/JP2002/002517
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English (en)
Japanese (ja)
Inventor
Chiemi Sawaumi
Eiji Taniguchi
Noriharu Suematsu
Kenichi Maeda
Takayuki Ikushima
Hiroyuki Joba
Original Assignee
Mitsubishi Denki Kabushiki Kaisha
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Application filed by Mitsubishi Denki Kabushiki Kaisha filed Critical Mitsubishi Denki Kabushiki Kaisha
Priority to JP2003577418A priority Critical patent/JPWO2003079542A1/ja
Priority to PCT/JP2002/002517 priority patent/WO2003079542A1/fr
Publication of WO2003079542A1 publication Critical patent/WO2003079542A1/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers

Definitions

  • the present invention relates to a microwave circuit capable of switching between two current modes in a broadband communication terminal or the like that conforms to a communication system such as the WCDMA system.
  • FIG. 1 shows a conventional microwave used in a broadband communication terminal represented by the CDMA system, described in the Proceedings of the IEICE Electronics and Electronics Society Conference (2001) P. 281-283.
  • FIG. 2 is a schematic circuit diagram illustrating a configuration of a circuit.
  • 31 is an input terminal to which a high-frequency signal is applied
  • 32 is an output terminal to which a high-frequency signal is output to the outside
  • 33 and 34 are first and third components constituting a cascade amplifier.
  • a second amplification transistor 35 is a bias circuit for supplying a bias to the base terminals of the first and second amplification transistors 33 and 34
  • a third circuit 36 is a third mode.
  • Control to bypass the high-frequency signal input via the input terminal 31 and output it via the output terminal 32, and to determine whether the mode is the first mode or the second mode.
  • a switch 37 is turned on and off in response to a control signal from the DC control circuit 36.
  • 39 is a collector of the second amplifying transistor 34 in order to stabilize the cascade amplifier. Evening to full Eid back an AC component from the terminal to the first base terminal of the amplifying transistor 3 3, a resistor connected in series, a capacitor, 4 0 One end is connected to the base terminal of the second amplifying transistor 34 and the other end is a DC component power capacitor connected to the ground.
  • the cascode amplifier converts a high-frequency signal input to the base terminal of the first amplification transistor 33 through the input terminal 31 into the first and second amplification signals. After being amplified by the transistors 33 and 34, the signal is output via the output terminal 32 connected to the collector terminal of the second amplifying transistor 34.
  • This conventional microwave circuit has a first mode with high gain and low current, a second mode with high gain and low current, and a third mode with low gain.
  • the DC control circuit 36 deactivates the control signal to turn off the switch 37, and the first mode or the second mode.
  • the bias supplied to the base terminals of the first and second amplifying transistors 33 and 34 is adjusted according to whether the mode is the above mode, and the bias current of the cascode amplifier is changed.
  • the micro mouth wave circuit is capable of providing the first mode of high gain and high current and the second mode of high gain and low current. Can be switched between the modes.
  • the DC control circuit 36 activates the control signal to turn on the switch 37 to connect the bypass path, so that the high-frequency signal input through the input terminal 31 is cascaded.
  • the signal is output via output terminal 32, bypassing the input amplifier.
  • the conventional microwave circuit is configured as described above, by changing the bias point of the cascode amplifier, the first mode with high gain and high current and the second mode with high gain and low current are switched. Can be switched between the first and second modes because the bias point is changed. There is a problem that the gain cannot be kept constant when switching the mode.
  • the same frequency band is separated in time from the frequency band used by FDD (Frequenc Division Divle), which separates the frequency band used to realize simultaneous two-way communication (duplex communication).
  • FDD Frequenc Division Divle
  • TDD Time Division Duplex
  • transmission waves affect reception depending on the distance to the base station. If the distance is long, the level of the received wave is smaller than the level of the transmitted wave, so if the current is not increased in the amplifier circuit for the received wave, characteristics such as distortion characteristics are maintained as specified. There is a problem that it is not possible.
  • the current is increased to maintain characteristics such as distortion characteristics, and conversely, if there is no transmitted wave and only reception is performed, the efficiency of the amplifier circuit is reduced by maintaining the gain while reducing the current in the amplifier circuit. It is preferable to improve
  • the present invention has been made in order to solve the above-described problems, and includes two amplifying circuits each having transistors having equal gains but different bias currents depending on whether or not transmission is performed.
  • the purpose is to obtain a microwave circuit that can switch between the two current modes without changing the gain by switching and using it. Disclosure of the invention
  • a microwave circuit has a base terminal to which a high-frequency signal is applied, includes a first transistor that operates as an emitter-grounded amplifier, and has a first transistor that is active in a first current mode.
  • An amplifier circuit and a base terminal connected to the base terminal of the first transistor and to which a high-frequency signal is applied and a collector terminal connected to the collector terminal of the first transistor.
  • the first amplifier circuit is active only in the first current mode
  • the second amplifier circuit is active only in the second current mode.
  • the first amplifier circuit is active in the first current mode and the second current mode, and the second amplifier circuit is active only in the second current mode. It is something that is.
  • the first amplifying circuit is connected between the emitter terminal of the first transistor and the ground, and emits the first transistor in accordance with a control signal applied.
  • a switch for connecting or disconnecting between the evening terminal and the ground is provided, and the second amplifier circuit is connected between the emitter terminal of the second transistor and the ground and is applied.
  • a switch is provided for connecting or disconnecting between the emitter terminal and ground of the second transistor in accordance with a control signal.
  • At least one of the first and second amplifier circuits includes a capacitor connected in parallel to a switch included in the amplifier circuit.
  • At least one of the first and second amplifier circuits includes a resistor connected between a collector terminal and an emitter terminal of a transistor included in the amplifier circuit. It is a thing.
  • the microwave circuit can be prevented from malfunctioning.
  • the emitter terminal of the first transistor of the first amplifier circuit is connected to ground
  • the second amplifier circuit is connected to the emitter of the second transistor.
  • a switch is connected between the terminal and the ground and connects or disconnects between the emitter terminal and the ground of the second transistor according to an applied control signal.
  • the second amplifier circuit includes a capacitor connected in parallel with the switch.
  • the capacitor allows the high-frequency component to pass, so that the emitter terminal of the second transistor is directly grounded in terms of high frequency, and as a result, There is an effect that the DC component can be emphasized.
  • the second amplifier circuit includes a resistor connected between the collector terminal and the emitter terminal of the second transistor.
  • a first amplifier circuit includes a first field-effect transistor having a source terminal connected to a collector terminal of a first transistor and a grounded gate terminal,
  • the second amplifier circuit A second field effect transistor having a source terminal connected to the collector terminal of the second transistor and a gate terminal grounded ⁇
  • At least one of the first and second amplifier circuits includes a resistor and a capacitor connected in series between a base terminal and a collector terminal of a transistor included in the amplifier circuit.
  • the first amplifier circuit includes a third transistor having a collector terminal connected to a collector terminal of the first transistor and a grounded pace terminal.
  • the second amplifier circuit includes a fourth transistor having a collector terminal connected to the collector terminal of the second transistor and a grounded base terminal.
  • At least one of the first and second amplifier circuits is connected in series between a base terminal and a collector terminal of a transistor included in the amplifier circuit. It has a resistor and a capacitor.
  • the first and second amplifier circuits are connected to the mutually connected collector terminals of the first and second transistors.
  • a field effect transistor having a grounded gate terminal and a grounded gate terminal.
  • a microphone mouth wave circuit includes a resistor and a capacitor connected in series between a base terminal and a collector terminal of a first transistor and a second transistor that are connected to each other.
  • the first and second amplifier circuits each include a collector terminal connected to the mutually connected collector terminals of the first and second transistors, and a grounded pace terminal.
  • the third Transis evening is for sharing.
  • a microphone mouth wave circuit includes a resistor and a capacitor connected in series between a base terminal and a collector terminal of a first transistor and a second transistor that are connected to each other.
  • FIG. 1 is a schematic circuit diagram showing a configuration of a conventional microphone mouth wave circuit.
  • FIG. 2 is a schematic circuit diagram showing a configuration of the microwave circuit according to Embodiment 1 of the present invention.
  • FIG. 3 shows a microwave circuit according to a modification of the first embodiment of the present invention.
  • FIG. 2 is a schematic circuit diagram showing a configuration.
  • FIG. 4 is a schematic circuit diagram showing a configuration of a microwave circuit according to another modification of Embodiment 1 of the present invention.
  • FIG. 5 is a schematic circuit diagram showing a configuration of a microwave circuit according to another modification of Embodiment 1 of the present invention.
  • FIG. 6 is a schematic circuit diagram showing a configuration of a microphone mouth wave circuit according to Embodiment 2 of the present invention.
  • FIG. 7 is a schematic circuit diagram showing a configuration of a microwave circuit according to a modification of the second embodiment of the present invention.
  • FIG. 8 is a schematic circuit diagram showing a configuration of a microwave circuit according to another modification of Embodiment 2 of the present invention.
  • FIG. 9 is a schematic circuit diagram showing a configuration of a microphone mouth wave circuit according to Embodiment 3 of the present invention.
  • FIG. 10 is a schematic circuit diagram showing a configuration of a microwave circuit according to a modification of the third embodiment of the present invention.
  • FIG. 11 is a schematic circuit diagram showing a configuration of a microwave circuit according to another modification of the third embodiment of the present invention.
  • FIG. 12 is a schematic circuit diagram showing a configuration of a microwave circuit according to another modification of the third embodiment of the present invention.
  • FIG. 13 is a schematic circuit diagram showing a configuration of a microwave circuit according to another modification of the third embodiment of the present invention.
  • FIG. 14 is a schematic circuit diagram showing a configuration of a microwave circuit according to Embodiment 4 of the present invention.
  • FIG. 15 is a schematic circuit diagram showing a configuration of a microwave circuit according to a modification of the fourth embodiment of the present invention.
  • FIG. 16 shows a microwave circuit according to another modification of the fourth embodiment of the present invention.
  • FIG. 3 is a schematic circuit diagram illustrating a configuration of nine paths.
  • FIG. 17 is a schematic circuit diagram showing a configuration of a microwave circuit according to another modification of the fourth embodiment of the present invention.
  • FIG. 18 is a schematic circuit diagram showing a configuration of a microwave circuit according to another modification of the fourth embodiment of the present invention.
  • FIG. 19 is a schematic circuit diagram showing a configuration of a microphone mouth wave circuit according to Embodiment 5 of the present invention.
  • FIG. 20 is a schematic circuit diagram showing a configuration of a microwave circuit according to a modification of the fifth embodiment of the present invention.
  • FIG. 21 is a schematic circuit diagram showing a configuration of a microphone mouth wave circuit according to another modification of the fifth embodiment of the present invention.
  • FIG. 22 is a schematic circuit diagram showing a configuration of a microphone mouth wave circuit according to Embodiment 6 of the present invention.
  • FIG. 2 ' is a schematic circuit diagram showing a configuration of a microwave circuit according to a modification of the sixth embodiment of the present invention.
  • FIG. 24 is a schematic circuit diagram showing a configuration of a microwave circuit according to another modification of the sixth embodiment of the present invention.
  • FIG. 2 is a schematic circuit diagram showing a configuration of the microwave circuit according to Embodiment 1 of the present invention.
  • 1 is an input terminal to which a high-frequency signal is applied
  • 2 is an output terminal from which the high-frequency signal is output to the outside
  • 3a is a high-frequency signal applied to the base terminal via the input terminal 1.
  • a first amplifying junction bipolar transistor (hereinafter abbreviated as a transistor) that operates as an amplifying emitter grounded amplifier, and 4a is connected to the emitter terminal of the first amplifying transistor 3a.
  • a first switch that has a drain terminal and a grounded source terminal, and turns on and off in response to a first control signal applied to a first control terminal 20a to which a gate terminal is connected;
  • a first field effect transistor (FET) provided as a switch, 3b is a base terminal connected to the base terminal of the first amplifying transistor 3a and the first amplifying transistor 3a.
  • a collector terminal connected to the collector terminal of the transistor 3a, and operates as an emitter grounding amplifier that amplifies the high-frequency signal applied to the pace terminal with a predetermined gain.
  • 4b is the second amplification
  • the transistor 3b has a drain terminal connected to the emitter terminal of the transistor 3b and a grounded source terminal, and has a drain terminal connected to the second control terminal 2 Ob connected to the gate terminal.
  • a second field-effect transistor (FET) provided as a second switch, which is turned on and off in response to the control signal of No. 2. That is, in the first and second amplification transistors 3a and 3b, their base terminals are connected to each other, and their collector terminals are connected to each other.
  • Reference numeral 5 denotes a bias circuit for supplying a bias to the base terminals of the first and second amplification transistors 3a and 3b
  • reference numeral 6a denotes an external circuit connected to the input terminal 1 and a microwave circuit
  • 6b is a second matching circuit that performs impedance matching between the external circuit connected to the output terminal 2 and the microphone wave circuit.
  • the first amplification means includes at least the first amplification transistor 3a and the first FET 4a
  • the second amplification means has at least Both include the second amplifying transistor 3b and the second FET 4b.
  • the microwave circuit according to the first embodiment of the present invention is designed to be able to switch between the two current modes without changing the gain.
  • the microwave circuit converts the input transmission wave into a high-frequency current of about 5 mA to maintain the characteristics of the communication terminal.
  • the microwave circuit amplifies the received wave in the low current mode of about 3 mA to improve the characteristics of the communication terminal. Can be maintained.
  • the DC bias current flowing between the collector terminal and the emitter terminal of the first and second amplifying transistors 3a and 3b has different desired values, and the first and second amplifying transistors 3a and 3b have different desired values.
  • each amplifying transistor is determined while equalizing the current density of the DC bias current flowing through the first and second amplifying transistors 3a and 3b so that the gains of 3a and 3b are equal. Is done. For example, if the micro mouthpiece circuit is switched between a first current mode with a current of about 3 mA and a second current mode with a current of about 5 mA, the first amplifying transistor 3 a The DC bias current is configured to be approximately 3 mA, and the second amplifying transistor 3b is configured so that the DC bias current is approximately 5 mA.
  • the high-frequency signal applied to the input terminal 1 is supplied to the base terminals of the first and second amplification transistors 3a and 3b via the first matching circuit 6a.
  • an active first control signal is applied to the gate terminal of the first FET 4a via the first control terminal 20a, which results in the first FET 4a 4a is on.
  • the emitter terminal of the first amplifying transistor 3a is grounded via the drain terminal and the source terminal of the first FET 4a. Therefore, when the first FET 4a is on In this case, the first amplification transistor 3a becomes active and operates as an emitter-grounded amplifier.
  • the current consumption of the microwave circuit is equal to the DC bias current flowing from the collector terminal of the first amplifying transistor 3a to the emitter terminal, for example, about 3 mA.
  • the first amplifying transistor 3a amplifies the high-frequency signal input to the base terminal via the first matching circuit 6a with a predetermined gain.
  • the amplified high-frequency signal is output from the collector terminal of the first amplifying transistor 3a to the output terminal 2 via the second matching circuit 6b, and is extracted outside.
  • the second FET 4b is off, and the emitter terminal of the second amplifying transistor 3b is open. Despite the supply of the bias, the second amplifying transistor 3b is inactive and does not operate as an amplifier.
  • the second current mode an active second control signal is applied to the gate terminal of the second FET 4b via the second control terminal 2 Ob, and as a result, the second FET 4b is on.
  • the emitter terminal of the second amplifying transistor 3b is grounded via the drain terminal and the source terminal of the second FET 4b. Therefore, when the second FET 4b is in the ON state, the second amplifying transistor 3b becomes active and operates as an emitter-grounded amplifier.
  • the current consumption of the microphone mouth wave circuit is equal to the DC bias current flowing from the collector terminal of the second amplifying transistor 3b to the emitter terminal, for example, about 5 mA.
  • the second amplifying transistor 3b amplifies the high-frequency signal input to the base terminal via the first matching circuit 6a with a predetermined gain.
  • the amplified high-frequency signal is supplied to a second amplification transformer.
  • the signal is output from the collector terminal of the resistor 3b to the output terminal 2 via the second matching circuit 6b, and is taken out.
  • the first FET 4a is off, and the emitter terminal of the first amplifying transistor 3a is open.
  • the first amplifying transistor 3a does not operate as an amplifier even though the bias is supplied.
  • the microwave circuit can reduce the low DC current without changing the gain. It is possible to switch between a first current mode of bias current (ie, low current consumption) and a second current mode of high DC bias current (ie, high current consumption). That is, the microwave circuit can realize amplification with the same gain at two different bias currents. Further, in the microwave circuit according to the first embodiment, since the first and second amplifying transistors 3a and 3b share the bias circuit 5, the microwave circuit is downsized.
  • This Embodiment 1 can have many variations.
  • only the first amplification transistor 3a becomes active in the first current mode, and the first and second amplification transistors 3a and 3b become active in the second current mode. It is configured to be.
  • the first amplifying transistor 3a is configured such that the DC bias current flowing from the collector terminal to the emitter terminal is, for example, about 3 mA
  • the second amplifying transistor 3b Is configured so that the DC bias current flowing from the collector terminal to the emitter terminal is, for example, about 2 mA.
  • the microwave circuit according to the first embodiment can be configured to be switchable between three current modes. That is, in the first current mode, only the first amplification transistor 3a is activated, and in the second current mode, only the second amplification transistor 3b is activated, and the third current mode is activated. In this configuration, the first and second amplification transistors 3a and 3b are configured to be active.
  • FIG. 3 is a schematic circuit diagram showing a configuration of a microwave circuit according to another modification of the first embodiment.
  • 7 & is the first?
  • the first DC component capacitor connected in parallel between the drain terminal and source terminal of the 4th & 7b is a capacitor between the drain terminal and the source terminal of the second FET 4b. This is a capacitor for the second DC component power connected to the power supply.
  • the first amplifying transistor 3a when the first FET 4a is turned on, the first amplifying transistor 3a operates as an emitter-grounded amplifier. However, the first FET 4a appears equivalently as a resistor and affects the noise characteristics.
  • the capacitor 7a connected in parallel with the first FET 4a allows high-frequency components to pass, so that the emitter terminal of the first amplifying transistor 3a is directly grounded in terms of high frequency. As a result, the DC component can be enhanced.
  • the second amplifying transistor 3b is active and operates as an emitter grounded amplifier, similarly, the capacitor 7b connected in parallel with the second FET 4b has a high frequency component.
  • the emitter terminal of the second amplifying transistor 3b is directly grounded in terms of high frequency, and as a result, a DC component can be boosted.
  • FIG. 4 is a schematic circuit diagram showing a configuration of a microwave circuit according to another modification of the first embodiment.
  • 8a is a first resistor connected between the collector terminal of the first amplification transistor 3a and the emitter terminal
  • 8b is one collector terminal of the second amplification transistor 3b. This is the second resistor connected between the emitter terminal and the terminal.
  • the capacitor 7a connected in parallel with the first FET 4a allows high frequency components to pass therethrough, so that the emitter of the first amplifying transistor 3a.
  • the terminal is directly grounded in terms of high frequency, and as a result, a DC component can be cut.
  • the first FET 4a when the first FET 4a is switched to the off state, in the microwave circuits shown in FIGS. 2 and 3, the first FET 4a becomes equivalently a capacitor, and The potential of the emitter terminal of the amplifying transistor 3a becomes unstable (floating), and as a result, the microphone amplifier circuit may malfunction, for example, the first amplifying transistor 3a may not be completely turned off. is there.
  • the first FET 4a when the first FET 4a is turned off, the first FET 4a is connected between the collector terminal and the emitter terminal of the first amplifying transistor 3a. Since the resistor 8a of 1 keeps the potential of the emitter terminal of the first transistor 3a constant, it is possible to prevent the microphone mouth wave circuit from malfunctioning. Similarly, if transistor 3b is active and operates as an emitter grounding amplifier, connect in parallel with the second FET 4b Since the capacitor 7b passes the high-frequency component, the emitter terminal of the second amplification transistor 3b is directly grounded at a high frequency, and as a result, the direct-current component is forced.
  • the second FET 4b when the second FET 4b is turned off, the second resistor 8b inserted between the collector terminal and the emitter terminal of the second amplifying transistor 3b is connected to the second amplifying transistor 3b. Keep the potential of the emitter terminal of transistor 3b constant. As a result, the second amplifying transistor 3b is completely turned off, and it is possible to prevent the microphone opening circuit from malfunctioning.
  • a resistor may be provided only between the collector terminal and the emitter terminal of the transistor 3b. Instead of this, it goes without saying that a resistor may be provided only between the collector terminal and the emitter terminal of the first amplifying transistor 3a.
  • the first and second switches connected to the emitter terminals of the first and second amplification transistors 3a and 3b, respectively, are limited to FETs. Instead, any circuit element having a switch function of turning on / off in response to an applied control signal may be used, and the same effect can be obtained.
  • the emitter terminals of the first and second amplifying transistors 3a and 3b may be grounded to a common ground, not separately, and the same effect is obtained.
  • FIG. 6 is a schematic circuit diagram showing a configuration of a microwave circuit according to Embodiment 2 of the present invention.
  • the same reference numerals as those in FIG. The same or corresponding components as those described in 1 are shown, and the description thereof will be omitted below.
  • the emitter terminal of the first amplifying transistor 3a is directly grounded, and the first FET 4 a is omitted.
  • the first amplifying means includes at least the first amplifying transistor 3a
  • the second amplifying means includes at least the second amplifying transistor 3b. And FET 4b.
  • the microphone aperture circuit according to the second embodiment of the present invention is designed to be able to switch between the two current modes without changing the gain.
  • the microwave circuit converts the input transmission wave into a high current mode with a current of about 5 mA.
  • the microwave circuit can maintain the characteristics of the communication terminal by amplifying the received wave in the low current mode of about 3 mA.
  • the DC bias current flowing between the collector terminals of the first and second transistor transistors 3a and 3b and the emitter terminal has different desired values, and the first and second amplifier transistors 3a and 3b have different desired values.
  • the current densities of the DC bias currents flowing through the first and second amplifying transistors 3a and 3b are equalized, and The size is determined.
  • the emitter terminal of the first amplification transistor 3a is directly grounded, it is connected to the emitter terminal of the second amplification transistor 3b.
  • the microwave circuit according to the second embodiment can be switched between the first and second current modes.
  • the first current mode with a current of about 3 mA and about 5 If the microwave circuit is switched between the second current modes of mA current, the first amplifying transistor 3a is configured such that its DC bias current is about 3 mA, and The amplifying transistor 3b is configured so that its DC bias current is about 2 mA.
  • the high-frequency signal applied to the input terminal 1 is connected to the first and second amplification transistors 3a and 3b via the first matching circuit 6a.
  • the first current mode no active control signal is applied to the control terminal 20b, so that the emitter terminal of the second amplifying transistor 3b is open. Therefore, the second amplifying transistor 3b is inactive and does not operate as an emitter ground amplifier even though the bias is supplied from the bias circuit 5.
  • the first amplifying transistor 3a is always active and works as an emitter grounded amplifier. Therefore, in the first current mode, the current consumption of the microwave circuit is equal to the DC bias current flowing from the collector terminal of the first amplifying transistor 3a to the emitter terminal, for example, about 3 mA.
  • the first amplifying transistor 3a amplifies the high-frequency signal input to the base terminal via the first matching circuit 6a with a predetermined gain.
  • the amplified high-frequency signal is output from the collector terminal of the first amplifying transistor 3a to the output terminal 2 via the second matching circuit 6b, and is extracted outside.
  • the second current mode an active control signal is applied to the gate terminal of the FET 4b via the control terminal 20b, and as a result, the FET 4b is turned on. .
  • the emitter terminal of the second amplification transistor 3b is connected between the drain terminal and the source terminal of the FET 4b. And grounded. Therefore, when the FET 4b is on, the second amplifying transistor 3b is also activated and operates as an emitter grounded amplifier.
  • the first amplifying transistor 3a is always active and functions as an emitter grounded amplifier.
  • the current consumption of the microwave circuit is determined by the DC bias current flowing from the collector terminal of the first amplification transistor 3a to the emitter terminal and the second amplification current. It is equal to the sum of the DC bias current flowing from the collector terminal of transistor 3b to the emitter terminal, for example, about 5 mA.
  • the first and second amplification transistors 3a and 3b are both high-frequency signals input to the base terminal via the first matching circuit 6a. Are amplified at respective predetermined gains.
  • the amplified high-frequency signal is output from the collector terminals of the first and second amplifying transistors 3a and 3b to the output terminal 2 via the second matching circuit 6b, and is extracted to the outside.
  • the microwave circuit can reduce the low DC bias current (ie, the low current consumption) without changing the gain. It is possible to switch between a current mode of 1 and a second current mode of high DC bias current (that is, high current consumption). That is, the microwave circuit can realize amplification with equal gain at two different bias currents.
  • the microwave circuit according to the second embodiment since the first and second amplifying transistors 3a and 3b share the bias circuit 5, the size of the microwave circuit is reduced.
  • FIG. 7 is a schematic circuit diagram showing a configuration of a microphone mouth wave circuit according to a modification of the second embodiment.
  • reference numeral 7 denotes a DC component power capacitor connected in parallel between the drain terminal and the source terminal of the FET 4b.
  • the second amplifying transistor 3b operates as an emitter-grounded amplifier.In this case, the FET 4b appears equivalently to a resistor and has noise characteristics. Will be affected.
  • the capacitor 7 connected in parallel with the FET 4b allows the high-frequency component to pass, the emitter terminal of the second amplifying transistor 3b is directly grounded in terms of high frequency, As a result, the DC component can be enhanced.
  • FIG. 8 is a schematic circuit diagram showing a configuration of a microwave circuit according to another modification of the second embodiment.
  • 8 is the second amplifying transistor
  • the second amplifying transistor 3b When 4b is switched to the ON state, the second amplifying transistor 3b operates as an emitter grounded amplifier.In this case, the FET 4b appears equivalently to a resistor and affects the noise characteristics. Will be given.
  • the capacitor 7 connected in parallel with the FET 4b allows high-frequency components to pass therethrough, so that the emitter terminal of the second amplifying transistor 3b is Typically, it is directly grounded, so that a DC component can be boosted.
  • the FET 4b is switched to the off state, in the microwave circuits shown in FIGS.
  • the FET 4b becomes equivalently a capacitor, and the second amplifying transistor 3b
  • the potential of the emitter terminal becomes unstable (floating), and as a result, the microwave circuit may malfunction, for example, the second amplifying transistor 3b may not be completely turned off.
  • the resistor 8 inserted between the collector terminal and the emitter terminal of the second amplifying transistor 3b connects to the second Because the potential of the mosquito mosquito in the amplification transistor 3b is kept constant, It is possible to prevent the wave circuit from malfunctioning.
  • the switch connected to the emitter terminal of the second amplifying transistor 3b is not limited to the FET, and is turned on / off according to the applied control signal. Any circuit element having a switch function can be used, and the same effect can be obtained.
  • the emitter terminals of the first and second amplifying transistors 3a and 3b may be grounded to the ground in common instead of separately, and the same effect is obtained.
  • FIG. 9 is a schematic circuit diagram showing a configuration of a microwave circuit according to Embodiment 3 of the present invention.
  • the same reference numerals as those in FIG. 2 denote the same or corresponding components as those in the first embodiment, and a description thereof will be omitted below.
  • reference numeral 9a denotes a source terminal connected to the collector terminal of the first amplification transistor 3a, a gate terminal connected to the third control terminal 21a, and a second terminal 9a.
  • a third FET having a drain terminal connected to the input terminal of the matching circuit 6b; 9b a source terminal connected to the collector terminal of the second amplification transistor 3b;
  • a fourth FET having a gate terminal connected to the control terminal 21b of the second matching circuit and a drain terminal connected to the input terminal of the second matching circuit 6b.
  • One end of the capacitor 10b is connected to the gate terminal of the fourth FET 9b and the other end is grounded. This is a capacitor for the DC component power.
  • the wave circuit includes a first cascode amplifier (first amplification means) including at least a first amplifying transistor 3a and a third FET 9a connected in series with the first amplifying transistor 3a.
  • the microwave circuit according to the third embodiment is designed to be able to switch between the two current modes without changing the gain.
  • the microwave circuit converts the input transmission wave to a high current of about 5 mA to maintain the characteristics of the communication terminal.
  • the microwave circuit can maintain the characteristics of the communication terminal by amplifying the reception wave in the low current mode of about 3 mA. . Therefore, the DC bias currents flowing between the collector terminals of the first and second amplification transistors 3a and 3b and the emitter terminals have different desired values, and the first and second cascade currents are different.
  • each amplifying transistor is determined so that the current densities of the DC bias currents flowing through the first and second amplifying transistors 3a and 3b are equal so that the gains of the amplifiers are equal.
  • the gains of the third and fourth FETs 9a and 9b are set to be equal.
  • the microwave circuit is switched between a first current mode of about 3 mA current and a second current mode of about 5 mA current
  • the first amplification transistor 3a is configured so that its DC bias current is about 3 mA
  • the second amplifying transistor 3b is configured so that its DC bias current is about 5 mA.
  • the high-frequency signal applied to the input terminal 1 is supplied to the base terminals of the first and second amplification transistors 3a and 3b via the first matching circuit 6a.
  • an active first control signal is applied to the gate terminal of the first FET 4a via the first control terminal 20a
  • an active third control signal is applied.
  • the gate terminal of the third FET 9a via the third control terminal 21a.
  • the first FET 4a and the third FET 9a are on.
  • the emitter terminal of the first amplifying transistor 3a is connected via the drain terminal and the source terminal of the first FET 4a.
  • the first amplifying transistor 3a becomes active and functions as an emitter grounding amplifier, and the first cascode amplifier is active. It is.
  • the first cascode amplifier amplifies the input high-frequency signal with a predetermined gain.
  • the current consumption of the microwave circuit is equal to the DC bias current flowing from the collector terminal to the emitter terminal of the first amplifying transistor 3a, for example, about 3 mA.
  • the first cascode amplifier including the first amplifying transistor 3a and the third FET 9a is connected to the base via the first matching circuit 6a.
  • the high frequency signal input to the terminal is amplified with a predetermined gain.
  • the amplified high-frequency signal is output from the drain terminal of the third FET 9a to the output terminal 2 via the second matching circuit 6b, and is extracted outside.
  • the second and fourth FETs 4b and 9b are off, and the emitter terminal of the second amplifying transistor 3b is open. Therefore, the second amplifying transistor 3b is not activated even though the bias is supplied from the bias circuit 5. And does not operate as an amplifier. That is, the second cascade amplifier does not operate in the first current mode.
  • the active second control signal is applied to the gate terminal of the second FET 4b via the second control terminal 2 Ob and the active fourth control signal is applied.
  • a control signal is applied to the gate terminal of the fourth FET 9b via the fourth control terminal 21b.
  • the second FET 4b and the fourth FET 9b are on.
  • the emitter terminal of the second amplifying transistor 3b is grounded via the drain terminal and the source terminal of the second FET 4b. Therefore, when the second and fourth FETs 4b and 9b are in the ON state, the second amplification transistor 3b becomes active and functions as an emitter grounding amplifier. Active.
  • the second cascode amplifier amplifies the input high-frequency signal with a predetermined gain. In this case, the current consumption of the microphone mouthpiece circuit is equal to the DC bias current flowing from the collector terminal of the second amplifying transistor 3b to the emitter terminal, for example, about 5 mA.
  • the second cascode amplifier including the third amplifying transistor 3b and the fourth: FET 9b is connected to the base terminal via the first matching circuit 6a.
  • the high-frequency signal input to is amplified by a predetermined gain.
  • the amplified high-frequency signal is output from the drain terminal of the fourth FET 9b to the output terminal 2 via the second matching circuit 6b, and is extracted outside.
  • the first and third FETs 4a and 9a are off, and the emitter terminal of the first amplifying transistor 3a is open. Therefore, even though the bias is supplied from the bias circuit 5, the first amplifying transistor 3a is non-active and does not operate as an amplifier. That is, in the second current mode, The cascode amplifier of 1 does not work.
  • the microwave circuit synchronizes the on / off of the first and second FETs 4a and 4b to generate the third and fourth FETs 9a and 9a.
  • the first current mode with low DC bias current ie, low current consumption
  • the second current mode with high DC bias current ie, high current consumption
  • the microwave circuit can realize amplification with equal gains at two different bias currents.
  • the first and second amplifying transistors 3a and 3b share the bias circuit 5, so that the size of the microwave circuit is reduced.
  • the third embodiment there can be many variations of the third embodiment.
  • only the first cascode amplifier is active in the first current mode and the first and second cascode amplifiers are active in the second current mode. Be composed.
  • the first amplifying transistor 3a is configured such that the DC bias current flowing from the collector terminal to the emitter terminal is, for example, about 3 mA
  • the second amplifying transistor 3a 3b is configured so that the DC bias current flowing from the collector terminal to the emitter terminal is, for example, about 2 mA.
  • the microphone mouth wave circuit according to the third embodiment can be configured to be switchable between three current modes. That is, in the first current mode, only the first cascode amplifier becomes active, and in the second current mode, only the second cascode amplifier becomes active. Are activated, and the first and second cascode amplifiers are activated in the third current mode.
  • FIG. 1 is a schematic circuit diagram showing a configuration of a microwave circuit according to another modification of the third embodiment.
  • 11a is a collector terminal connected to the collector terminal of the first amplifying transistor 3a, a base terminal connected to the DC component capacitor 10a, and
  • a third amplifying transistor having an emitter terminal connected to the input terminal of the second matching circuit 6b, and lib being a collector transistor connected to the collector terminal of the second amplifying transistor 3b.
  • this modification as shown in FIG.
  • the first cascode amplifier includes a third amplification transistor 1 la as a second stage instead of the third FET 9 a, and the second cascode amplifier
  • the amplifier has a fourth amplification transistor lib as the second stage instead of the fourth FET 9b. Therefore, when the first FET 4a is turned on, in the first cascode amplifier, the first amplifying transistor 3a becomes active, operates as an emitter-grounded amplifier, and operates as the third amplifying transistor 1a. la becomes active and operates as a common-base amplifier. Similarly, when the second FET 4b is turned on, in the second cascode amplifier, the second amplification transistor 3b becomes active, operates as an emitter grounded amplifier, and operates as the fourth amplification amplifier.
  • FIG. 11 is a schematic circuit diagram showing a configuration of a microwave circuit according to another modification of the third embodiment.
  • 7a is a DC component cutting capacitor connected between the drain terminal and the source terminal of the first FET 4a
  • 7b is a drain terminal of the second FET 4b. Connect between one source terminal This is the capacitor for the DC component power cut.
  • the first amplifying transistor 3a when the first FET 4a is turned on, the first amplifying transistor 3a operates as an emitter-grounded amplifier.
  • the first FET 4a appears equivalently as a resistor and affects the noise characteristics.
  • the capacitor 7a connected in parallel with the first FET 4a allows the high-frequency component to pass, so that the emitter terminal of the first amplifying transistor 3a is connected to the high-frequency component. As a result, it is directly grounded, and as a result, the DC component can be boosted.
  • the capacitor 7b connected in parallel with the second FET 4b removes high frequency components. Pass through, so the second amplifying transistor
  • the emitter terminal of 3b is directly grounded in terms of high frequency, and as a result, the DC component can be boosted. Note that it is not always necessary to provide a capacitor in parallel between the source terminal and the drain terminal of the first and second FETs 4a and 4b. As shown in FIG. 13, the second FET
  • a capacitor may be provided in parallel only between the source terminal and the drain terminal of 4b. It is needless to say that instead of this, a capacitor may be provided in parallel only between the source terminal and the drain terminal of the first FET 4a.
  • FIG. 12 is a schematic circuit diagram showing a configuration of a microwave circuit according to another modification of the third embodiment.
  • 12a is a resistor having one end connected to the base terminal of the first amplifying transistor 3a to stabilize the first amplifying transistor 3a
  • 13a is the first amplifying transistor.
  • This is a capacitor having one end connected to the other end of the resistor 12a and the other end connected to the collector terminal of the first amplifying transistor 3a for stabilizing the transistor 3a.
  • 1 2b stabilizes the second amplifying transistor 3b Is a resistor whose one end is connected to the base terminal of the second amplifying transistor 3b
  • 13b is the other end of the resistor 12b for stabilizing the second amplifying transistor 3b.
  • the first and second switches respectively connected to the emitter terminals of the first and second amplifying transistors 3a, 3b Is not limited to the FET, but the control applied Any circuit element having a switch function of turning on / off according to a signal may be used, and the same effect can be obtained.
  • the emitter terminals of the first and second amplifying transistors 3a, 3b and the capacitors 10a, 10b for DC component power are not grounded separately but are commonly grounded to ground. The same effect can be obtained.
  • the first cascade amplifier is replaced by the third FET 9a instead of the third FET 9a.
  • the transistor 11a may be provided as a second stage, and the second cascode amplifier may be provided with a fourth amplifying transistor 11b instead of the fourth FET 9b as a second stage.
  • Embodiment 4
  • FIG. 14 is a schematic circuit diagram showing a configuration of a microphone mouth wave circuit according to Embodiment 4 of the present invention.
  • the same reference numerals as those in FIG. 9 denote the same or corresponding components as those according to the third embodiment, and a description thereof will be omitted below.
  • the emitter terminal of the first amplifying transistor 3a is directly grounded, The first FET 4a has been omitted.
  • the microwave circuit according to the fourth embodiment of the present invention includes at least a first amplifying transistor 3a and a third FET 9a connected in series to the first amplifying transistor 3a.
  • a second cascode amplifier (second amplifier) including at least a first cascode amplifier (first amplification means) and at least a second amplifying transistor 3b and a fourth FET 9b connected in series thereto. Amplifying means).
  • the microwave circuit according to the fourth embodiment has a larger gain as compared with the first and second embodiments. become.
  • the microwave circuit according to the fourth embodiment is designed to be able to switch between the two current modes without changing the gain.
  • a communication terminal to which a microwave circuit is applied transmits a high frequency
  • the microwave circuit transmits the transmitted wave with a current of about 5 mA.
  • the microwave circuit amplifies the reception wave in the low current mode of about 3 mA to improve the characteristics of the communication terminal. Can be maintained.
  • the DC bias currents flowing between the collector terminal and the emitter terminal of the first and second amplification transistors 3a and 3b have different desired values, and the first and second amplification transistors 3a and 3b have different desired values.
  • the size of each amplification transistor is determined while equalizing the current density of the DC bias current flowing through the first and second amplification transistors 3a and 3b so that the gains of the cascode amplifiers become equal.
  • the gains of the third and fourth FETs 9a and 9b are set to be equal.
  • the emitter terminal of the first amplification transistor 3a is directly grounded, it is connected to the emitter terminal of the second amplification transistor 3b.
  • the microwave circuit according to the fourth embodiment is switched between the first and second current modes. For example, if the microwave circuit is switched between a first current mode with a current of about 3 mA and a second current mode with a current of about 5 mA, the first amplifying transistor 3 a The bias current is configured to be approximately 3 mA, and the second amplifying transistor 3b is configured so that its DC bias current is approximately 2 mA.
  • the voltage applied to the input terminal 1 is The high-frequency signal is input to the base terminals of the first and second amplification transistors 3a and 3b via the first matching circuit 6a.
  • the first current mode no active control signal is applied to the control terminals 20 b and 2 lb, so that the FET 4 b is off and the second amplifying transistor 3 Since the emitter terminal of b is in an open state, the second amplification transistor 3b is inactive despite the bias being supplied from the bias circuit 5, and the emitter amplifier is connected to the grounding amplifier. Does not work. Since the FET 9b is also off, the second cascode amplifier is inactive.
  • the active control signal is applied to the gate terminal of the FET 9a via the control terminal 21a, the first amplification transistor 3a is always active and the emitter grounded amplifier is used. And the first cascode amplifier is active. Therefore, in the first current mode, the current consumption of the microwave circuit is equal to the DC bias current flowing from the collector terminal of the first amplifying transistor 3a to the emitter terminal, for example, about 3 m. A.
  • the first cascade amplifier including the first amplifying transistor 3a and the FET 9a is input to the base terminal via the first matching circuit 6a.
  • the high-frequency signal is amplified with a predetermined gain.
  • the amplified high-frequency signal is output from the drain terminal of the FET 9a to the output terminal 2 via the second matching circuit 6b, and is extracted outside.
  • the FETs 4b and 9b are off, and the emitter terminal of the second amplifying transistor 3b is open.
  • the second width transistor 3b is inactive and does not operate as an amplifier. That is, the second cascode amplifier does not operate in the first current mode.
  • an active control signal is applied to the gate terminal of the FET 4b via the control terminal 20b, and an active control signal is applied to the FET 4b via the control terminal 21b.
  • Applied to 9b gate terminal As a result, these FETs 4 b and 9 b are turned on.
  • the emitter terminal of the second width transistor 3b is grounded via the drain terminal and the source terminal of the FET 4b. Therefore, when the FETs 4b and 9b are in the ON state, the second amplifying transistor 3b also becomes active and functions as an emitter-grounded amplifier, and the second cascode amplifier is active. As a result, the second cascode amplifier amplifies the input high-frequency signal with a predetermined gain.
  • the first amplifying transistor 3 a is always Active and working as an emitter ground amplifier, the first power scode amplifier is active.
  • the first cascode amplifier amplifies the input high-frequency signal with a predetermined gain. Therefore, in the second current mode, the current consumption of the microwave circuit is determined by the DC bias current flowing from the collector terminal of the first amplifying transistor 3a to the emitter terminal and the second amplifying transistor. It is equal to the sum of the DC bias current flowing from the collector terminal of 3b to the emitter terminal, for example, about 5 mA.
  • the first and second cascode amplifiers are both connected to the first and second amplifying transistors 3a, 3b via the first matching circuit 6a.
  • the high frequency signal input to the base terminal of each is amplified by a predetermined gain.
  • the amplified high-frequency signal is output from the drain terminals of the FETs 9a 'and 9b to the output terminal 2 via the second matching circuit 6b, and is extracted outside.
  • the microwave circuit The gain is changed by turning on / off the FETs 9a and 9b provided as the second stage of the first and second cascade amplifiers in synchronization with the on / off of T4b. It is possible to switch between the first current mode of low DC bias current (ie, low current consumption) and the second current mode of high DC bias current (ie, high current consumption) without the need. That is, the microphone mouth wave circuit can realize amplification with the same gain at two different bias currents.
  • the first and second amplifying transistors 3a and 3b share the bias circuit 5, so that the size of the microwave circuit is reduced.
  • FIG. 15 is a schematic circuit diagram showing a configuration of a microwave circuit according to a modification of the fourth embodiment.
  • 1 la is the collector terminal connected to the collector terminal of the first amplifying transistor 3a, the pace terminal connected to the DC component power capacitor 10a, and the second matching circuit.
  • 6b is a third amplifying transistor having an emitter terminal connected to the input terminal of b
  • lib is a collector terminal connected to the collector terminal of the second amplifying transistor 3b and a DC component.
  • a fourth amplifying transistor having a base terminal connected to the power capacitor 10b and an emitter terminal connected to the input terminal of the second matching circuit 6b.
  • the first cascade amplifier includes a third amplifying transistor 11a instead of the FET 9a as a second stage.
  • the second power coded amplifier has a fourth amplification transistor 11b instead of the FET 9b as the second stage. Therefore, the first cascode amplifier is always active, the first amplifying transistor 3a operates as an emitter-grounded amplifier, and the third amplifying transistor 11a is a grounded base amplifier. Is working as On the other hand, when FET 4b is turned on, In this cascode amplifier, the second amplifying transistor 3b becomes active and operates as an emitter grounded amplifier, and the fourth amplifying transistor 11b operates as a grounded base amplifier.
  • FIG. 16 is a schematic circuit diagram showing a configuration of a microwave circuit according to another modification of the fourth embodiment.
  • reference numeral 7 denotes a capacitor for DC component power connected between the drain terminal and the source terminal of FET 4b.
  • the second amplifying transistor 3b operates as an emitter-grounded amplifier. Therefore, the FET 4b looks equivalently as a resistor and affects the noise characteristics.
  • the DC component power capacitor 7 connected in parallel with the FET 4b allows the high frequency component to pass, the emitter terminal of the second amplifying transistor 3b is In terms of high frequency, it is directly grounded, and as a result, the DC component can be cut.
  • FIG. 17 is a schematic circuit diagram showing a configuration of a microwave circuit according to another modification of the fourth embodiment.
  • 12a is a resistor having one end connected to the base terminal of the first amplifying transistor 3a to stabilize the first amplifying transistor 3a
  • 13a is the first amplifying transistor.
  • a capacitor having one end connected to the other end of the resistor 12a and the other end connected to the collector terminal of the first amplifying transistor 3a in order to stabilize the transistor 3a.
  • Reference numeral 1b denotes a resistor having one end connected to the base terminal of the second amplification transistor 3b for stabilizing the second amplification transistor 3b
  • reference numeral 13b denotes a second amplification transistor.
  • a direct connection between the base terminal and the collector terminal of the first amplifying transistor 3a The column resistor 12a and capacitor 13a feed back the AC component from the collector terminal to the base terminal, preventing the first amplifying transistor 3a from oscillating at a high frequency, and Stabilizes transistor 3a.
  • the gain of the first amplifying transistor 3a does not depend on temperature or device characteristics.
  • a series resistor 12b and a capacitor 13b connected between the base terminal and the collector terminal of the second amplifying transistor 3b feed back the AC component from the collector terminal to the base terminal.
  • the gain of the second amplification transistor 3b does not depend on the temperature / device characteristics. Note that it is not always necessary to provide a series resistor and capacitor for stabilization between the base terminal and the collector terminal of the first and second amplifying transistors 3a and 3b, as shown in FIG. In addition, a series resistor and capacitor for stabilization may be provided only between the base terminal and the collector terminal of the first amplification transistor 3a. It is needless to say that a series resistor and capacitor for stabilization may be provided only between the base terminal and the collector terminal of the second amplifying transistor 3b instead of this.
  • the switch connected to the emitter terminal of the second amplifying transistor 3b is not limited to the FET, and is turned on / off according to the applied control signal. Any circuit element having a switch function may be used, and similar effects can be obtained.
  • the emitter terminals of the first and second amplifying transistors 3a and 3b and the capacitors 10a and 10b for DC component power are not separated but are commonly grounded to ground. The same effect can be obtained.
  • the first cascode amplifier has a third amplification transistor 11a instead of the FET 9a as a second stage
  • the second cascode amplifier has a fourth amplification transistor 1a instead of the FET 9b.
  • lb may be provided as the second stage.
  • FIG. 19 is a schematic circuit diagram showing a configuration of a microwave circuit according to Embodiment 5 of the present invention.
  • the same reference numerals as those in FIG. 2 denote the same or corresponding components as in the first embodiment, and a description thereof will be omitted below.
  • 14 is grounded via the source terminal connected to the collector terminals of the first and second amplifying transistors 3a and 3b, and the capacitor 15 for DC component power. And a drain terminal connected to the input terminal of the second matching circuit 6b.
  • the microphone mouthpiece circuit according to the fifth embodiment of the present invention includes at least a first amplification transistor 3a and a third FET 14 connected in series to the first amplification transistor 3a. And a second cascode amplifier (second amplifier) including at least a second amplifying transistor 3b and a third FET 14 connected in series thereto. Amplifying means). That is, the first and second cascode amplifiers share the third FET14. As a result, the microwave circuit according to the fifth embodiment has a larger gain as compared with the first and second embodiments.
  • the microwave circuit according to the fifth embodiment is designed to be able to switch between the two current modes without changing the gain.
  • communication terminals to which microwave circuits are applied When transmitting high-frequency waves, the microwave circuit amplifies the input transmission wave in a high-current mode with a current of about 5 mA to maintain the characteristics of the communication terminal, while the communication terminal transmits high-frequency waves.
  • the microwave circuit can maintain the characteristics of the communication terminal by amplifying the received wave in a low current mode of about 3 mA. Therefore, the DC bias current flowing between the collector terminal and the emitter terminal of the first and second amplifying transistors 3a and 3b has different desired values, and the first and second cascodes are different.
  • each amplification transistor is determined while equalizing the current densities of the DC bias currents flowing through the first and second amplification transistors 3a and 3b so that the gains of the amplifiers become equal. For example, if the microwave circuit is switched between a first current mode with a current of about 3 mA and a second current mode with a current of about 5 mA, the first amplifying transistor 3 a The DC bias current is configured to be approximately 3 mA, and the second amplification transistor 3 b is configured so that the DC bias current is approximately 5 mA. Next, the operation will be described.
  • an active first control signal is applied to the gate terminal of the first FET 4a via the first control terminal 20a.
  • the first FET 4a is turned on.
  • the emitter terminal of the first amplification transistor 3a is grounded via the drain terminal and the source terminal of the first FET 4a. Therefore, the first amplifying transistor 3a becomes active and functions as an emitter grounding amplifier, and the first cascode amplifier including the first amplifying transistor 3a and the third FET 14 is in a predetermined state.
  • the input high-frequency signal is amplified with a gain of.
  • the current consumption of the microphone mouth wave circuit is equal to the DC bias current flowing from the collector terminal to the emitter terminal of the first amplifying transistor 3a, for example, about 3 mA.
  • the first cascode amplifier including the first amplifying transistor 3a and the third FET 14 is input to the base terminal via the first matching circuit 6a.
  • the amplified high-frequency signal is amplified with a predetermined gain.
  • the amplified high-frequency signal is output from the drain terminal of the third FET 14 to the output terminal 2 via the second matching circuit 6b, and is extracted outside.
  • the second FET 4b is in the off state, and the emitter terminal of the second amplifying transistor 3b is in the open state.
  • the second amplifying transistor 3b is inactive and does not operate as an amplifier. That is, the second cascode amplifier does not operate in the first current mode.
  • the second current mode an active second control signal is applied to the gate terminal of the second FET 4b via the second control terminal 2Ob.
  • the second FET 4b is turned on.
  • the emitter terminal of the second amplifying transistor 3b is grounded via the drain terminal and the source terminal of the second FET 4. Therefore, the second amplifying transistor 3b becomes active and functions as an emitter grounded amplifier, and the second power scode amplifier including the second amplifying transistor 3b and the third FET 14 has a predetermined gain.
  • the current consumption of the microwave circuit is equal to the DC bias current flowing from the collector terminal of the second amplifying transistor 3b to the emitter terminal, for example, about 5 mA.
  • the second cascade amplifier including the third amplifying transistor 3b and the third FET 14 is connected to the base via the first matching circuit 6a.
  • the high frequency signal input to the terminal is amplified with a predetermined gain.
  • the amplified high-frequency signal flows from the drain terminal of the third FET 14
  • the signal is output to the output terminal 2 via the second matching circuit 6b and is extracted to the outside.
  • the first FET 4a is in an off state, and the emitter terminal of the first amplifying transistor 3a is in an open state.
  • the first amplifying transistor 3a is inactive and does not operate as an amplifier. That is, the first cascode amplifier does not operate in the second current mode.
  • the microwave circuit can achieve low DC without changing the gain. It is possible to switch between a first current mode of bias current (ie, low current consumption) and a second current mode of high DC bias current (ie, high current consumption). That is, the microwave circuit can realize amplification with equal gain at two different bias currents. Also, in the microwave circuit according to the fifth embodiment, the first and second amplifying transistors 3a and 3b share the bias circuit 5, so that the microwave circuit can be downsized and Since the first and second cascode amplifiers share the third FET 14, the size is further reduced as compared with the third and fourth embodiments.
  • the fifth embodiment there may be many variations of the fifth embodiment.
  • the first cascode amplifier is active in the first current mode and the first and second cascode amplifiers are active in the second current mode.
  • the first amplification transistor 3a is configured such that the DC bias current flowing from the collector terminal to the emitter terminal is, for example, about 3 in A
  • the second amplification transistor 3a b is configured so that the DC bias current flowing from the collector terminal to the emitter terminal is, for example, about 2 mA. Therefore, the first current mode Then, a current of about 3 mA corresponding to the DC bias current of the first amplification transistor 3a flows.In the second current mode, the DC current of the first and second amplification transistors 3a and 3b is increased.
  • FIG. 20 is a schematic circuit diagram showing a configuration of a microphone mouth wave circuit according to another modification of the fifth embodiment.
  • reference numeral 16 denotes a collector terminal connected to the collector terminals of the first and second amplifying transistors 3a and 3b, and a pace terminal connected to the capacitor 15 for DC component power.
  • the first and second cascade amplifiers share the third amplification transistor 16 as the second stage in place of the third FET 14. ing. Therefore, when the first FET 4a is turned on, in the first cascode amplifier, the first amplifying transistor 3a becomes active and operates as an emitter-grounded amplifier and operates as the third amplifying transistor. 16 becomes active and operates as a grounded base amplifier. Similarly, when the second FET 4b is turned on, in the second cascode amplifier, the second amplifying transistor 3b becomes active and operates as an emitter grounded amplifier, and the third amplifier The transistor 16 becomes active and operates as a grounded base amplifier.
  • FIG. 21 shows the structure of a microwave circuit according to another modification of the fifth embodiment.
  • FIG. 4 is a schematic circuit diagram showing the configuration.
  • 7a is a DC component cutting capacitor connected between the drain terminal and the source terminal of the first FET 4a
  • 7b is a drain terminal-source terminal of the second FET 4b.
  • a DC component capacitor connected between the first and second amplification transistors 3a and 3b for stabilizing the first and second amplification transistors 3a and 3b
  • a is a resistor having one end connected to the commonly connected base terminal, and 13 is connected to the other end of the resistor 12 in order to stabilize the first and second amplifying transistors 3 a and 3 b.
  • the first amplifying transistor 3a operates as an emitter grounded amplifier.
  • the first FET 4a appears equivalently as a resistor and affects the noise characteristics.
  • the DC component power capacitor 7a connected in parallel with the first FET 4a allows the high-frequency component to pass therethrough, so that the first amplifying transistor 3a The emitter terminal is directly grounded in terms of high frequency, and as a result, the DC component can be cut.
  • a DC component power capacitor 7b connected in parallel with the second FET 4b Allows the high frequency component to pass, so that the emitter terminal of the second amplifying transistor 3b is directly grounded in terms of high frequency, so that the DC component can be cut off. It is not necessary to provide a capacitor in parallel between the source terminal and the drain terminal of the first and second FETs 4a and 4b. Alternatively, a capacitor may be provided in parallel only between the source terminal and the drain terminal of the second FET 4a or 4b.
  • the first and second amplifying transistors 3a and 3b are prevented from oscillating at a high frequency, and the first and second amplifying transistors 3a and 3b are stabilized. As a result, the gains of the first and second amplifying transistors 3a and 3b do not depend on temperature or device characteristics.
  • the first and second switches respectively connected to the emitter terminals of the first and second amplifying transistors 3a and 3b are FETs.
  • the present invention is not limited to this, and any circuit element having a switch function of turning on and off in response to an applied control signal may be used, and the same effect can be obtained.
  • the emitter and the capacitor 15 for the DC component power of the first and second amplifying transistors 3 a and 3 b may be grounded to a common ground instead of being separated from each other. Similar effects can be obtained.
  • the first and second cascode amplifiers each include a third amplification transistor 16 instead of the FET 14. It may be shared as a stage.
  • FIG. 22 is a schematic circuit diagram showing a configuration of a microphone mouth wave circuit according to Embodiment 6 of the present invention.
  • the same reference numerals as those in FIG. 19 denote the same or corresponding components as in the fifth embodiment, and a description thereof will be omitted below.
  • the emitter terminal of the first amplifying transistor 3a is directly grounded.
  • the first FET 4a has been omitted.
  • the microwave circuit according to the sixth embodiment of the present invention includes a first circuit including at least a first amplification transistor 3a and a FET 14 connected in series to the first amplification transistor 3a.
  • the first and second cascode amplifiers share FET 14.
  • the microwave circuit according to the sixth embodiment has a larger gain as compared with the first and second embodiments.
  • the microwave circuit according to the sixth embodiment is designed to be able to switch between the two current modes without changing the gain.
  • the microwave circuit when a communication terminal to which a microwave circuit is applied transmits a high frequency, in order to maintain the characteristics of the communication terminal, the microwave circuit transmits the transmitted wave with a current of about 5 mA.
  • the microwave circuit when the communication terminal receives a high frequency, the microwave circuit maintains the characteristics of the communication terminal by amplifying the reception wave in the low current mode of about 3 mA, while amplifying in the high current mode. can do.
  • the DC bias currents flowing between the collector terminals of the first and second amplification transistors 3a and 3b and the emitter terminals have different desired values, and the first and second cascades are different.
  • each amplifying transistor is determined while equalizing the current densities of the DC bias currents flowing through the first and second amplifying transistors 3a and 3b so that the gains of the single amplifiers become equal.
  • the emitter terminal of the first amplification transistor 3a is directly grounded, it is connected to the emitter terminal of the second amplification transistor 3b.
  • the microwave circuit according to the sixth embodiment can be switched between the first and second current modes.
  • the first amplifying transistor 3a Is configured such that its DC bias current is about 3 mA
  • the second amplification transistor 3b is configured such that its DC bias current is about 2 mA.
  • the emitter terminal of the second amplification transistor 3b is in an open state.
  • the bias is supplied from the bias circuit 5
  • the second amplifying transistor 3b is inactive and does not operate as an emitter grounding amplifier.
  • the first amplifying transistor 3a is always active and functions as an emitter grounded amplifier. Therefore, in the first current mode, the always-active first amplifying transistor 3a functions as an emitter-grounded amplifier, and the first power-source amplifier amplifies a high-frequency signal input with a predetermined gain. Amplify.
  • the current consumption of the microwave circuit is equal to the DC bias current flowing from the collector terminal of the first amplifying transistor 3a to the emitter terminal, for example, about 3 mA.
  • the first cascode amplifier including the first amplifying transistor 3a and the FET 14 is input to the base terminal via the first matching circuit 6a.
  • the high frequency signal is amplified with a predetermined gain.
  • the amplified high-frequency signal is output from the drain terminal of the FET 14 to the output terminal 2 via the second matching circuit 6b, and is extracted outside.
  • the FET 4b is in the off state, and the second current Since the emitter terminal of the width transistor 3b is open, the second amplification transistor 3b is inactive despite the bias supplied from the bias circuit 5. Does not work as an amplifier. That is, the second cascade amplifier does not operate in the first current mode.
  • the second current mode an active control signal is applied to the gate terminal of the FET 4b via the control terminal 20b.
  • the FET 4b is turned on.
  • the emitter terminal of the second width transistor 3b is grounded via the drain terminal and the source terminal of the FET 4b. Therefore, when the FET 4b is in the ON state, the second amplification transistor 3b is also activated and operates as an emitter-grounded amplifier, and the second cascode amplifier receives the high-frequency signal inputted with a predetermined gain. Increase the signal.
  • the first amplifying transistor 3a is always active and functions as an emitter-grounded amplifier, and the first cascode amplifier is always active.
  • the current consumption of the micro mouthpiece circuit is equal to the DC bias current flowing from the collector terminal of the first amplifying transistor 3a to the emitter terminal and the second current. It is equal to the sum of the DC bias current flowing from the collector terminal of the transistor 3b for amplification to the emitter terminal, for example, about 5 mA.
  • the first and second cascade amplifiers are both connected to the first and second amplifying transistors 3a, 3a, via the first matching circuit 6a.
  • 3 Amplify the high-frequency signal input to the base terminal of b with a predetermined gain.
  • the amplified high-frequency signal is output from the drain terminal of FET 14 to the output terminal 2 via the second matching circuit 6b, and is extracted to the outside.
  • the microwave circuit can reduce the low direct current without changing the gain. It is possible to switch between a first current mode of bias current (ie, low current consumption) and a second current mode of high DC bias current (ie, high current consumption). That is, the microwave circuit can realize amplification with equal gain at two different bias currents.
  • the first and second amplifying transistors 3a and 3b share the bias circuit 5, so that the microwave circuit is downsized. Since the first and second cascade amplifiers share the FET 14, the size is further reduced as compared with the third and fourth embodiments.
  • FIG. 23 is a schematic circuit diagram showing a configuration of a microphone mouth wave circuit according to a modification of the fifth embodiment.
  • reference numeral 16 denotes a collector terminal connected to the collector terminals of the first and second amplifying transistors 3a and 3b, and a base connected to a capacitor 15 for DC component power.
  • a third amplifying transistor having a terminal and an emitter terminal connected to the input terminal of the second matching circuit 6b.
  • the first and second cascade amplifiers share the third amplifying transistor 16 as the second stage instead of the FET 14.
  • the first amplifying transistor 3a is always active and operates as an emitter grounded amplifier
  • the third amplifying transistor 16 is also always active and operates as a grounded base amplifier. That is, the first cascode amplifier is always active.
  • the second FET 4b is turned on, in the second cascode amplifier, the second amplifying transistor 3b becomes active and operates as an emitter ground amplifier, and the third amplifying transistor 1b is activated. 6 becomes active and operates as a grounded base amplifier.
  • FIG. 24 shows the structure of a microwave circuit according to another modification of the sixth embodiment.
  • FIG. 4 is a schematic circuit diagram showing the configuration.
  • 7 is a capacitor for DC component power connected between the drain terminal and the source terminal of the second FET 4b
  • 12 is the first and second amplifying transistors 3a
  • a resistor having one end connected to the commonly connected pace terminal of the first and second amplifying transistors 3a for stabilizing 3b
  • 13 being the first and second amplifying transistors
  • one end connected to the other end of resistor 12 and the collector terminal commonly connected to first and second amplifying transistors 3a and 3b are connected. This is a capacitor having the other end.
  • the second amplifying transistor 3b when FE: ⁇ 4b is switched to the ON state, the second amplifying transistor 3b operates as an emitter grounded amplifier.
  • the FET 4b appears equivalently as a resistor and affects the noise characteristics.
  • the DC component power capacitor 7 connected in parallel with the FET 4b allows the high frequency component to pass therethrough, so that the emitter terminal of the second amplification transistor 3b Is directly grounded at high frequencies, so that the DC component can be cut.
  • the first and second amplifying transistors 3a and 3b are prevented from oscillating at a high frequency, and the first and second amplifying transistors 3a and 3b are stabilized. As a result, the gains of the first and second amplifying transistors 3a and 3b do not depend on temperature or device characteristics.
  • the switch connected to the emitter terminal of the second amplifying transistor 3b is not limited to the FET, but is a switch that is turned on / off in accordance with the applied control signal. If it is a circuit element having a ⁇ function Any effect can be obtained, and the same effect can be obtained.
  • the emitter terminals of the first and second amplifying transistors 3a and 3b and the capacitor 15 for DC component power may be grounded to a common ground instead of separately. The same effect can be obtained.
  • the first and second cascade amplifiers include a third amplifying transistor 16 instead of the FET 14. It may be shared as the second stage.
  • the microwave circuit according to the present invention can be used in a wide-band communication terminal or the like conforming to a communication scheme such as the WCDMA scheme, without changing the gain, in the first current mode with a low current and the second current mode with a high current. Suitable for switching between current modes.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

Circuit hyperfréquence qui comporte un premier circuit amplificateur et un second circuit amplificateur. Le premier circuit amplificateur, qui comprend un premier transistor ayant une borne de base à laquelle est appliqué un signal à haute fréquence et fonctionnant en tant qu'amplificateur à émetteur commun, est actif dans un premier mode de courant. Le second circuit amplificateur ayant un gain pratiquement équivalent à celui du premier circuit amplificateur, qui comporte un second transistor ayant une borne de base connectée à la borne de base du premier transistor et à laquelle est appliqué un signal à haute fréquence et une borne collectrice connectée à la borne collectrice du premier transistor, et fonctionnant en tant qu'amplificateur à émetteur commun, est actif dans un second mode de courant. Par conséquent, ledit circuit hyperfréquence peut commuter entre le premier mode à courant faible et le second mode à courant élevé sans modification du gain.
PCT/JP2002/002517 2002-03-15 2002-03-15 Circuit hyperfrequence WO2003079542A1 (fr)

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JP2003577418A JPWO2003079542A1 (ja) 2002-03-15 2002-03-15 マイクロ波回路
PCT/JP2002/002517 WO2003079542A1 (fr) 2002-03-15 2002-03-15 Circuit hyperfrequence

Applications Claiming Priority (1)

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PCT/JP2002/002517 WO2003079542A1 (fr) 2002-03-15 2002-03-15 Circuit hyperfrequence

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WO2003079542A1 true WO2003079542A1 (fr) 2003-09-25

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005184628A (ja) * 2003-12-22 2005-07-07 Yokogawa Electric Corp 入力回路
JP2006050074A (ja) * 2004-08-02 2006-02-16 New Japan Radio Co Ltd 利得可変型増幅器
JP2006311623A (ja) * 2006-08-10 2006-11-09 Sharp Corp 可変増幅器およびそれを用いた携帯無線端末
JP2007335942A (ja) * 2006-06-12 2007-12-27 Nec Electronics Corp 可変利得増幅器
CN102647163A (zh) * 2011-02-15 2012-08-22 拉碧斯半导体株式会社 可变增益放大电路

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05259765A (ja) * 1992-03-13 1993-10-08 Nippon Telegr & Teleph Corp <Ntt> 高周波高出力増幅装置
JPH06350348A (ja) * 1993-06-08 1994-12-22 Sharp Corp トランジスタ増幅器
JPH10190378A (ja) * 1996-12-27 1998-07-21 Nec Corp 超高効率線形増幅器
JPH10276047A (ja) * 1997-03-27 1998-10-13 Matsushita Electric Ind Co Ltd 電力増幅器
JP2000278109A (ja) * 1999-03-19 2000-10-06 Fujitsu Ltd 高周波スイッチ、切替型高周波スイッチ、および切替型高周波電力増幅器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05259765A (ja) * 1992-03-13 1993-10-08 Nippon Telegr & Teleph Corp <Ntt> 高周波高出力増幅装置
JPH06350348A (ja) * 1993-06-08 1994-12-22 Sharp Corp トランジスタ増幅器
JPH10190378A (ja) * 1996-12-27 1998-07-21 Nec Corp 超高効率線形増幅器
JPH10276047A (ja) * 1997-03-27 1998-10-13 Matsushita Electric Ind Co Ltd 電力増幅器
JP2000278109A (ja) * 1999-03-19 2000-10-06 Fujitsu Ltd 高周波スイッチ、切替型高周波スイッチ、および切替型高周波電力増幅器

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005184628A (ja) * 2003-12-22 2005-07-07 Yokogawa Electric Corp 入力回路
JP2006050074A (ja) * 2004-08-02 2006-02-16 New Japan Radio Co Ltd 利得可変型増幅器
JP2007335942A (ja) * 2006-06-12 2007-12-27 Nec Electronics Corp 可変利得増幅器
JP2006311623A (ja) * 2006-08-10 2006-11-09 Sharp Corp 可変増幅器およびそれを用いた携帯無線端末
CN102647163A (zh) * 2011-02-15 2012-08-22 拉碧斯半导体株式会社 可变增益放大电路
JP2012169898A (ja) * 2011-02-15 2012-09-06 Lapis Semiconductor Co Ltd 可変利得増幅回路

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