WO2003079456A1 - Procede de production d'un substrat et d'un dispositif semi-conducteur par traitement au plasma - Google Patents
Procede de production d'un substrat et d'un dispositif semi-conducteur par traitement au plasma Download PDFInfo
- Publication number
- WO2003079456A1 WO2003079456A1 PCT/JP2002/010422 JP0210422W WO03079456A1 WO 2003079456 A1 WO2003079456 A1 WO 2003079456A1 JP 0210422 W JP0210422 W JP 0210422W WO 03079456 A1 WO03079456 A1 WO 03079456A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate material
- manufacturing
- thin film
- metal thin
- plasma
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 62
- 239000000463 material Substances 0.000 title claims description 55
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 238000012545 processing Methods 0.000 title claims description 16
- 238000000034 method Methods 0.000 claims abstract description 58
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000001301 oxygen Substances 0.000 claims abstract description 19
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 19
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 19
- 230000001590 oxidative effect Effects 0.000 claims description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 11
- 238000009832 plasma treatment Methods 0.000 claims description 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 3
- 238000000608 laser ablation Methods 0.000 claims description 3
- 230000003197 catalytic effect Effects 0.000 claims description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 2
- 238000000992 sputter etching Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052710 silicon Inorganic materials 0.000 abstract description 17
- 239000010703 silicon Substances 0.000 abstract description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 6
- 150000004767 nitrides Chemical class 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 3
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- -1 silicon oxide nitride Chemical class 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
Definitions
- Substrate material including plasma treatment and method for manufacturing semiconductor device
- the present invention provides a method for identifying the damage introduced into a substrate material by plasma processing.
- substrate materials and semiconductor devices especially semiconductor devices such as semiconductor integrated circuits, solar cells, and thin film transistors, plasma processing and processing of substrate materials and thin film deposition are widely used.
- This plasma treatment introduces damage into the substrate material. It is known that the characteristics of a semiconductor device are degraded when a semiconductor device is created while leaving the damage. For this reason, a process for removing damage due to plasma processing is provided. Depending on the material, heating is performed only by heating, but the heating process in that case has generally been performed at a high temperature (for example, 600 to 900 ° C).
- An object of the present invention is to make it possible to remove damage due to plasma processing at a lower temperature than conventional methods. Disclosure of the invention
- a method of manufacturing a substrate material according to the present invention is a method of manufacturing a substrate material including a plasma treatment in a layer deposition, processing or processing step.
- the metal having a substrate material modifying function is a metal having a catalytic function of dissociating oxygen molecules or ozone molecules.
- Heat treatment of the substrate material in an oxidizing atmosphere through the metal thin film makes it possible to remove plasma damage at a lower temperature than in the conventional method. Secondary problems can be avoided.
- a method of manufacturing a semiconductor device according to the present invention is characterized in that a semiconductor element is formed on a substrate material from which plasma damage has been removed according to the present invention. Since the plasma damage is removed from the substrate material, the characteristics of the obtained semiconductor device are improved.
- FIG. 1 is a process sectional view of one embodiment showing a method of manufacturing an MNOS capacitor by using a substrate material manufacturing method by removing plasma damage.
- Fig. 2 is a diagram showing the C-V curve of the MNOS capacitance.
- A shows the case where the plasma damage of the silicon oxide nitride film was not removed, and
- B shows the example. In this case, the plasma damage of the silicon oxide nitride film was removed.
- Platinum or palladium is preferable as the metal having the function of modifying the substrate material by removing the plasma damage. This is because these metals have an excellent function of modifying the substrate material by removing the plasma damage at a low temperature.
- the method of depositing a metal thin film for removing plasma damage is not particularly limited as long as the method can control the thickness of the thin film.
- Preferred methods are a vapor deposition method and an electrolytic plating method.
- the term “evaporation method” is used in a broad sense meaning a physical deposition method in a vacuum, and there is no limitation on means for generating or depositing particles by heating or impacting an evaporation source.
- Various methods such as resistance heating, sputtering, electron beam heating, electron beam impact, and ion sputtering can be used.
- the deposited film thickness is preferably in the range of 0.5 nm to 50 O nm, more preferably 2 to 1 nm. 0 nm. If the thickness of the deposited film is too thin, it is difficult to deposit uniformly, and if it is too thick, it becomes difficult to exert the function of modifying the substrate material.
- the oxidizing atmosphere in the heating step for removing plasma damage is preferably any of the following atmospheres a to g.
- the heat treatment temperature in the heating process to remove plasma damage is 600 ° C or lower, which is lower than the conventional heat treatment temperature, and its temperature range is 25 to 600 ° C.
- the object of the present invention can be achieved by heat treatment at a low temperature. For example, even at a low temperature of 10 ° C. or less, the effect is obtained, but it takes time.
- the target plasma treatment includes processing such as nitridation and oxidation and thin film deposition, including methods such as plasma CVD, sputter deposition, laser ablation, electron impact, and ion etching. It is.
- Materials that can be removed by plasma damage include silicon substrates, nitrided films, oxide films, oxynitride films, polysilicon films, as well as high-dielectric films and ferroelectric films.
- platinum or palladium is deposited on a substrate material having plasma damage in a thickness of 0.5 to 500 nm, and then at a temperature of 600 ° C. or less and By modifying the substrate material by performing a heat treatment in an oxidizing atmosphere, a high-quality substrate material can be efficiently produced.
- Metals such as platinum-palladium used to remove plasma damage The thin film may be subsequently removed. However, the metal thin film can be left as it is, or the same metal or another metal can be deposited thereon and used as an electrode or wiring for a semiconductor device. The method is reasonable.
- a first embodiment in which the substrate material is modified by removing plasma damage according to the present invention will be described with reference to FIG.
- a description will be given up to the point where after modifying the substrate material, a metal nitride oxide semiconductor (MNOS) used in a semiconductor integrated circuit as a device is formed using the substrate material.
- MNOS metal nitride oxide semiconductor
- an element isolation region 2 and an active region 4 for forming an element were formed on a silicon substrate 1.
- an oxide film having a LOCOS (Local oxidation of Silicon) structure was formed to a thickness of 500 nm by steam oxidation at 1,000 ° C.
- a SiO 2 film having a thickness of about 1 nm exists as a natural oxide film 3.
- a single-crystal silicon substrate having a p-type conductivity (100) plane orientation and a specific resistance of 10 to 15 ⁇ cm prepared by a pulling method (CZ method) is used.
- boron is implanted by a known ion implantation method at an acceleration energy of 50 keV so as to obtain a concentration of 2 ⁇ 10 13 cm— 3 (atom).
- the thermal oxide film 6 is nitrided by exposing the silicon substrate 1 on which the thermal oxide film 6 has been formed to nitrogen plasma generated by a known low-speed electron impact method for one hour.
- Xinite nitride film 7 was formed (Fig. 1 (d)).
- a dalid and a filament such as tungsten are arranged in a vacuum chamber in which the pressure of a target gas is controlled to face each other, and the filaments are heated to emit thermoelectrons.
- This method is to create a plasma by accelerating the hot electrons by applying a voltage and causing them to collide with target gas molecules (T. Mizokuro, K. Yoneda, Y. Todoroki and H.
- the plasma generation atmosphere was 0.002 mbar of nitrogen.
- the heating temperature of the filament for plasma generation was 1200 ° C, and the voltage applied to the grid for the filament was 50 V.
- the temperature of the silicon substrate was set to 50 ° C, the pressure was 1 X 1 0- 4 P a.
- a modified silicon oxide nitride film 9 was obtained by treating in dry oxygen at 300 ° C. for 1 hour in an electric furnace. (Fig. 1 (f)).
- FIG. 2 shows that an aluminum electrode was formed after nitriding a 5 nm thermal oxide film using nitrogen plasma created by low-speed electron impingement, as described in the above example. It is a capacitance-voltage (C-V) curve of a triode film silicon> MNOS diode.
- C-V capacitance-voltage
- a curve (a) shown by a broken line shows a case where the substrate material modification treatment for removing plasma damage was not performed.
- the C-V curve has a large hysteresis of about 0.7 V, and the entire C-V curve is large. It is observed in the negative bias region.
- the curve (b) shown by the solid line shows that, after the thermal oxide film was subjected to the nitrogen plasma treatment, the silicon oxide thin film was 3 nm thick as shown in the above example.
- platinum was deposited by an electron beam evaporation method, and then heat treatment was performed at 300 ° C. for 1 hour in dry oxygen. Hysteresis has almost completely disappeared, and the C-V curve has shifted to the positive bias side.
- This experimental result shows that, in the present invention, the plasma damage was removed by the heat treatment after the deposition of platinum, and the substrate material was modified.
- Table 1 shows the characteristics of the ⁇ aluminum / silicon oxynitride nitride film / silicon> MNOS diode prepared in this example, as in FIG. 2 c (Table 1)
- the thickness of the silicon oxynitride film was 5 nm regardless of whether or not the treatment for removing plasma damage was performed.
- the relative dielectric constant was increased from 3.8 to 4.4 by performing a process for removing plasma damage. This result also indicates that plasma damage has been eliminated.
- the metal film having the function of modifying the substrate material is not limited to the platinum film shown in the embodiment, but may be a palladium film. It has been confirmed that the palladium film also has a substrate material modification function similar to the platinum film. Further, the method of forming the metal film is not limited to the electron beam evaporation method of the embodiment, but may be another evaporation method such as a resistance heating evaporation method or a sputter evaporation method, or an electrolytic plating method.
- a metal thin film having a function of modifying a substrate material by removing plasma damage is deposited on a substrate material having plasma damage, and then heated in an oxidizing atmosphere. It is possible to remove plasma damage without using high-temperature heating as described above. By improving the material properties of the substrate in this way, it is possible to achieve higher performance of semiconductor devices such as semiconductor integrated circuits, solar cells, and thin film transistors. Industrial applicability
- the method of modifying a substrate material by removing plasma damage using the method according to the present invention is applicable to various semiconductor devices such as semiconductor integrated circuits, solar cells, and thin film transistors. It can be applied to various other uses and substrate materials.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Abstract
L'invention concerne un procédé de production d'un substrat et d'un dispositif semi-conducteur par traitement au plasma. Ce procédé consiste à exposer une pellicule d'oxyde thermosensible (6) de 5 nm d'épaisseur, formée sur une plaquette, à du plasma d'azote produit à partir d'un procédé de bombardement électronique à faible vitesse, pendant une heure, afin de nitrurer la pellicule d'oxyde thermosensible (6) et de former une pellicule d'oxynitrure de silicium (7). Le procédé consiste ensuite à déposer une pellicule de platine (8) d'environ 3 nm d'épaisseur sur la pellicule d'oxynitrure de silicium (7), puis à traiter l'ensemble à 300 °C pendant une heure, dans de l'oxygène sec, dans un four électrique, afin de produire une pellicule d'oxynitrure de silicium (9) reformée. Le procédé consiste enfin à retirer la pellicule de platine (8) par gravure, puis à former une électrode grille en aluminium (9) sur la pellicule d'oxynitrure de silicium (9) reformée, afin d'obtenir une diode MNOS présentant de bonnes caractéristiques électriques.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002/078743 | 2002-03-20 | ||
| JP2002078743A JP2003282872A (ja) | 2002-03-20 | 2002-03-20 | プラズマ処理を含む基板材料及び半導体デバイスの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2003079456A1 true WO2003079456A1 (fr) | 2003-09-25 |
Family
ID=28035603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2002/010422 WO2003079456A1 (fr) | 2002-03-20 | 2002-10-07 | Procede de production d'un substrat et d'un dispositif semi-conducteur par traitement au plasma |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2003282872A (fr) |
| TW (1) | TW591707B (fr) |
| WO (1) | WO2003079456A1 (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7405125B2 (en) * | 2004-06-01 | 2008-07-29 | Macronix International Co., Ltd. | Tunnel oxynitride in flash memories |
| JP5332030B2 (ja) * | 2007-12-28 | 2013-11-06 | 大日本印刷株式会社 | 薄膜トランジスタ基板及びその製造方法 |
| JP2022129872A (ja) * | 2021-02-25 | 2022-09-06 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0886308A2 (fr) * | 1997-06-20 | 1998-12-23 | Japan Science and Technology Corporation | Nitruration à plasma d'une couche d'oxide de silicium |
| EP0969506A2 (fr) * | 1998-07-03 | 2000-01-05 | Matsushita Electronics Corporation | Condensateur DRAM at son procédé de manufacture |
| JP2002057154A (ja) * | 2000-08-14 | 2002-02-22 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
-
2002
- 2002-03-20 JP JP2002078743A patent/JP2003282872A/ja active Pending
- 2002-10-07 WO PCT/JP2002/010422 patent/WO2003079456A1/fr not_active Application Discontinuation
- 2002-11-18 TW TW091133583A patent/TW591707B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0886308A2 (fr) * | 1997-06-20 | 1998-12-23 | Japan Science and Technology Corporation | Nitruration à plasma d'une couche d'oxide de silicium |
| EP0969506A2 (fr) * | 1998-07-03 | 2000-01-05 | Matsushita Electronics Corporation | Condensateur DRAM at son procédé de manufacture |
| JP2002057154A (ja) * | 2000-08-14 | 2002-02-22 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200304673A (en) | 2003-10-01 |
| TW591707B (en) | 2004-06-11 |
| JP2003282872A (ja) | 2003-10-03 |
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