WO2003074756A1 - Dispositif de retenue d'element de type disque - Google Patents

Dispositif de retenue d'element de type disque Download PDF

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Publication number
WO2003074756A1
WO2003074756A1 PCT/JP2003/002692 JP0302692W WO03074756A1 WO 2003074756 A1 WO2003074756 A1 WO 2003074756A1 JP 0302692 W JP0302692 W JP 0302692W WO 03074756 A1 WO03074756 A1 WO 03074756A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
disk
contact
holding
concave shape
Prior art date
Application number
PCT/JP2003/002692
Other languages
English (en)
Japanese (ja)
Inventor
Masato Koshikawa
Hideki Ishizaki
Jun Emoto
Original Assignee
Tdk Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tdk Corporation filed Critical Tdk Corporation
Priority to KR1020047013885A priority Critical patent/KR100606314B1/ko
Publication of WO2003074756A1 publication Critical patent/WO2003074756A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B17/00—Guiding record carriers not specifically of filamentary or web form, or of supports therefor
    • G11B17/02—Details
    • G11B17/022—Positioning or locking of single discs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Definitions

  • the present invention relates to a holding device for a disk-like member, and relates, for example, to a holding device used when performing predetermined processing (for example, thin film formation and the like) on a disk-like member.
  • predetermined processing for example, thin film formation and the like
  • a recording medium (hereinafter, also simply referred to as a disc) manufactured by forming various thin films on a disc-like member (disc-like substrate), for example, a CD system such as CD, CD_R, CD-RW, etc.
  • a CD system such as CD, CD_R, CD-RW, etc.
  • discs such as discs, optical discs such as DVD-based discs such as DVD_ROM and DVD-R, and magneto-optical discs such as MO and MD.
  • These disks are manufactured, for example, by laminating thin films on a substrate made of a material such as polycarbonate using various treatments such as sputtering and spin coating.
  • substrates used as the material of these disks are handled (for example, positioning in various processes such as loading and unloading to processing equipment, thin film formation, holding, etc., using through holes pre-opened in the central part) ) It had been.
  • the through hole opened at the center of the substrate is inserted into the rotation shaft on the rotary table.
  • move the substrate from the vicinity of the through hole toward the outer periphery of the substrate from the vicinity of the through hole by moving the substrate along with the rotary table and providing the tip of the application arm for applying (dropping etc.) resin.
  • a resin is applied to the surface of the substrate while the resin is applied, and the applied resin is applied to the entire surface of the substrate using centrifugal force or the like by the rotation of the rotary table.
  • the applicants of the present application adopt a substrate without through holes and start applying resin from the vicinity of the central portion of the substrate. I understand that is effective.
  • the red laser light having a relatively long wavelength as in the prior art It is required to use a substrate without through holes as the starting point of resin application by using a substrate without through holes as compared to the case of using It will be.
  • the applicants of the present invention have proposed an apparatus, method and the like that can handle a substrate without a through hole at the center portion easily and accurately in spin coating processing, but processing other than spin coating processing (
  • the handle having no through hole in the central portion can be handled easily and in high quality. It is required to be able to process. That is, in consideration of productivity and the like, it is preferable to be able to process a substrate having no through hole in the central portion and a substrate having a through hole in the central portion without changing the handle method.
  • it is conceivable to separately provide a step of opening the through hole after the spin coat treatment for the subsequent treatment this leads to specialization of the apparatus and narrows the freedom of the production system design, which is not preferable. It is from. Disclosure of the invention
  • the present invention has been made in view of the above-described circumstances, and provides a holding device capable of holding a disk-like member with high accuracy regardless of the presence or absence of a through hole while having a relatively simple and inexpensive configuration.
  • the purpose is
  • the disk-shaped member holding device comprises: a disk-shaped member; A holding means is provided which holds the surface to be treated of the member so as to be deformed into a predetermined concave shape.
  • the film is flat almost perpendicularly to the direction of flight of the thin film-forming material as in the prior art.
  • the substrate surface it is possible to promote the equalization of the quality (for example, the film thickness etc.) of the thin film formed on the back surface of the disk-like member.
  • the surface of the disc-like member opposite to the surface to be treated (that is, the back surface of the disc-like member) Since the adhesion between the surface and the surface can be enhanced, it is possible to improve the efficiency of cooling of the disc-like member performed via the contact surface during the sputtering process or the like.
  • the holding means is
  • a disc provided on the disc-like member while the contact face is in contact with the face of the disc-like member opposite to the treated face to deform the treated face into a predetermined concave shape.
  • Engaging member for engaging the disc-like member with the contact surface via the contact member-side engaging portion, and the contact surface side engaging portion provided on the contact surface;
  • the holding means is
  • the contact surface is brought into contact with the surface of the disc-like member opposite to the surface to be treated.
  • An outer peripheral holding means for holding an outer peripheral portion of the disc-like member while deforming the processing surface into a predetermined concave shape;
  • the outer peripheral portion of the disk-like member when the outer peripheral portion of the disk-like member is held via the outer peripheral holding means, the outer peripheral portion of the disk-like member can be well held, so that the following effects can be achieved. .
  • FIG. 1 is a cross-sectional view showing an example of a sputtering apparatus side transfer arm configured to include a holding device for a disc-like member according to an embodiment of the present invention.
  • FIG. 2 is a top view of the sputtering apparatus side transfer arm shown in FIG.
  • FIG. 3 is an enlarged view of a portion C in FIG.
  • FIG. 4 is a view for explaining the delivery operation (state before delivery) of the disk-like member (substrate) performed between the atmosphere side transport arm and the sputtering apparatus side transport arm.
  • FIG. 5 is a view for explaining the delivery operation (state after delivery) of the disk-like member (substrate) performed between the atmosphere side transport arm and the sputtering apparatus side transport arm.
  • FIG. 6 is an enlarged view of a part in FIG.
  • FIG. 7 is an enlarged view of a portion b in FIG.
  • FIG. 8 is an enlarged view of a portion c in FIG. BEST MODE FOR CARRYING OUT THE INVENTION
  • FIG. 1 shows a sputtering apparatus side conveyance including a holding device 10 for holding a disk-like substrate (disk-like part) 1 for sputtering in the embodiment of the present invention.
  • the arms 12 are shown.
  • the holding device 10 includes an abutting portion 11 that abuts against the substrate 1 when holding (checking) the disk-shaped substrate 1 having no through hole at the center portion.
  • the contact surface 1 1 A of the contact portion 11 is such that the substrate 1 is pressed to the contact portion 11 side and the substrate 1 is in close contact with the contact surface 1 1
  • the substrate 1 is deformed to a concave shape as viewed from the atmosphere side transfer arm 13 side to be described later, that is, the action direction AA of the pressing force to the substrate 1 by the suction axis 14 to be described later (in other words, It is formed in a concave shape with respect to the traveling direction of the thin film forming material with respect to the substrate 1 in the sputtering process.
  • the concave shape may be spherical.
  • an engaging portion 1 B that is engraved (or protruded) on the abutting surface 1 A of the substrate 1 on the abutting surface 11 A of the abutting portion 11.
  • the engaging part 1 1 B for engaging with the housing is projected (or engraved).
  • the engaging portion 1 B and the engaging portion 1 1 B may be any members that can be engaged and disengaged (released engagement) in a predetermined manner, and accordingly their shape, structure, number, arrangement, position, size, etc. Is not limited to the example shown in the drawings.
  • the contact surface 1A of the substrate 1 corresponds to the "surface opposite to the processed surface of the disk-like member" according to the present invention
  • the engagement portion 1B is a disk-like according to the present invention. It corresponds to a member side engaging part
  • the said engaging part 1 1 B corresponds to the contact surface side engaging part which concerns on this invention
  • the said engagement The parts 1 B, 1 IB constitute the engagement means according to the invention.
  • the holding apparatus 10 is attached to the sputtering apparatus side transfer arm 12, and the holding apparatus 10 achieves good positioning and holding of the substrate 1 as described below, while the atmosphere side transfer arm 13 1 and mask 4 0 are received.
  • the atmosphere side transfer arm 13 adsorbs and holds the substantially central portion of the substrate 1 having no through hole at the central portion with a suction shaft 14 via, for example, a negative pressure or the like. It is transported to the vicinity, and the contact surface 1A of the substrate 1 is operated to face the contact surface 11A of the contact portion 11 (see FIG. 4).
  • the atmosphere side transfer arm 13 is moved in the direction in which the substrate 1 approaches the contact surface 11 A of the contact portion 11, and the knock pin 13 A engages with the knock hole 2 OA. It is operated as shown in Fig. 4 and Fig. 5 etc.
  • the mask 40 attracted and held by the magnetic force of the magnet unit 30 of the atmosphere side transfer arm 13 and transferred together with the substrate 1 is abutted against the magnet unit 1 2 A of the sputtering apparatus side transfer arm 12.
  • the magnetic force of the magnet unit 12 A it is also attracted and held on the side of the sputtering apparatus side transfer arm 12 (see FIGS. 1, 4 and 5).
  • the substrate 1 is made of the contact surface 1 1 A It is positioned and held by the engaging portions 1 B and 1 1 B in a state of being deformed in a concave shape with respect to the acting direction AA of the pressing force along the concave shape.
  • the substrate 1 functions as the outer circumferential holding means according to the present invention.
  • the outer periphery of the substrate 1 is held in a predetermined manner by the mechanical chuck 15.
  • the holding operation by the mechanical chuck 15 is performed while the substrate 1 is pressed in a predetermined manner by the suction shaft 14 so that the substrate 1 adheres well to the concave shape of the contact surface 11 A. Is preferred.
  • a chuck opening / closing cam ring 20 provided with a cam groove 16 for opening / closing the mechanical chuck 15 (holding and releasing the substrate 1) is a holding device. It is attached to the sputtering apparatus side transfer arm 12 so that the circumference of the central axis of the contact part 11 of the 10 can be rotated relative to the contact part 11.
  • a cam follower 17 is inserted in the cam groove 16, and a mechanical chuck 15 is attached to the cam follower 17 via a shaft 18.
  • the central axes of the contact portion 11 and the support portion 21 are disposed to coincide with the central axis A of the substrate 1.
  • the axis 18 extends substantially in parallel with the central axis A of the substrate 1 in a plane including the central axis B of the axis 18 and the central axis A of the substrate 1 (that is, in the plane of FIG. 3).
  • a slide groove 19 which is substantially orthogonal to the axis 18 and extends along a plane (FIG. 3 plane) including the central axis B of the axis 18 and the central axis A of the substrate 1 is a holding device 1 It is provided in the support part 21 which supports the contact part 11 of zero.
  • the shaft 18 is inserted in the slide groove 19 so as to be movable in the longitudinal direction of the slide groove 19 (the Z direction in FIG. 2, FIG. 3, etc.). Further, a mechanical chuck 15 attached to the shaft 18 is fitted in the relief groove 15 A so as to be movable in the longitudinal direction of the slide groove 19 (the Z direction in FIG. 2).
  • the cam groove 16 extends in a direction (Y direction) which intersects the circumferential direction (X direction) of the chuck opening / closing cam ring 20 in a predetermined direction as shown in FIG.
  • Said cam follower 17 is to receive the action from the cam groove 16. At this time, since the shaft 18 attached to the cam follower 17 is movably accommodated in the slide groove 19, when receiving the action from the cam groove 16, the cam follower 17 extends to the shaft 1. 8 is moved along the slide groove 19 in the Z direction shown in FIGS.
  • each cam follower 17 and thus the shaft 18 is moved in the direction closer to the central axis A in the Z direction.
  • the mechanical chucks 15 attached to the respective shafts 18 are also moved in the same direction along the relief grooves 15A. Therefore, the mechanical chuck 15 holds the outer peripheral portion of the substrate 1 held by the contact portion 11 in a predetermined manner.
  • the rotation for opening and closing the mechanical chuck 15 of the chuck opening and closing cam ring 20 is the knocking pin 13 A of the atmosphere side transfer arm 13 engaged with the knock hole 2 OA provided on the chuck opening and closing cam ring 20. It can be done by the pivoting movement around the central axis A.
  • the peripheral portion of the substrate 1 is When the holding operation is performed, subsequently, the magnet holder 31 supporting the magnet unit 30 of the atmosphere-side transfer arm 13 is retracted to the right in FIG. 5 of the atmosphere-side transfer arm 13 and the magnet unit Release the adsorption holding to the mask 40 by the magnetic force of 30.
  • the pressure member 32 which is a component of the atmosphere side transfer arm 13 and is interposed between the mask 40 and the magnet unit 30 is the mask 4. Since 0 is pressed toward the sputtering apparatus side transfer arm 12 side in a predetermined manner, when the magnet holder 30 is extended, the magnet unit 30 is retracted to the right in FIG.
  • the magnet holder 31 can extend well in the right direction of FIG. 5 against the magnetic holding force of the magnet unit 30 so that the magnet unit 31 can be favorably retracted.
  • the mask 40 is sputtered as described above. Since the mask 40 is attracted and held by the magnetic force of the magnet unit 12 A of the apparatus side transfer arm 12, the mask 40 is well held at the predetermined position of the sputtering apparatus side transfer arm 12.
  • the substrate 1 and the mask 40 held by the atmosphere side transfer arm 13 can be delivered to the sputtering apparatus side transfer arm 12, and the sputtering apparatus side The substrate 1 is positioned and held in a predetermined manner with respect to the transfer arm 13.
  • the transfer arm 13 on the side of the sputtering device is connected to the housing or the like of the sputtering processing unit (not shown) via the bonding portion 50, and then the inside of the housing is evacuated and the sputtering processing on the substrate 1 is performed in a predetermined manner. Is executed. '
  • the substrate 1 and the mask 40 held by the transfer device 12 on the side of the sputter are transferred to the transfer arm 13 on the atmosphere side.
  • Such an operation is described in (1) to (6) above. Achieved by performing the reverse operation of the procedure It is possible.
  • the mechanical chuck 15 When releasing the holding operation of the outer peripheral portion of the substrate 1 by the mechanical chuck 15, the adverse effect of shock or the like generated when releasing the thin film formed on the substrate 1 can be eliminated as much as possible.
  • the holding operation of the mechanical chuck 15 can be released while the central portion of the substrate 1 is pressed in a predetermined manner by the suction shaft 14. That is, when the mechanical chuck 15 is released, the central portion of the substrate 1 is pressed in advance by the suction shaft 14 and then the mechanical chuck 15 is released. Thereafter, the suction shaft 14 is gradually released. After releasing the pressure on the central portion of the substrate 1, the engagement portions 1 B and 1 1 B are released from engagement via the suction force of the substrate 1 by the suction shaft 14. It is preferable to carry out the transport of
  • the engagement portion 1 B is provided on the substrate 1, and the engagement portion 1 1 B is provided on the contact portion 11 on the side holding the substrate 1. Since the substrate 1 is held by the holding device 10 via these engaging portions, even if the substrate 1 does not have a through hole at the center, it should be well positioned and held with respect to the holding device 10. Can.
  • the contact surface 11 A of the contact portion 11 with the substrate 1 has a concave shape so that the surface to be processed of the substrate 1 to be held has a concave shape (for example, The substrate 1 is deformed into a concave shape with respect to the direction in which the thin film-forming material is introduced in the processing), and the sputter processing is performed on the surface 1 C to be processed of the substrate 1 in such a state.
  • the substrate 1 when the substrate 1 is subjected to sputtering treatment on the surface 1 C in a state of being deformed into a concave shape in the direction in which the thin film forming material travels, as in the prior art, Compared to the case where the substrate surface is disposed flat and substantially orthogonal to the direction of flight, uniformization of the quality (for example, film thickness etc.) of the thin film formed on the substrate surface can be promoted.
  • the substrate 1 is in contact with the contact surface 11 A of the contact portion 11 in a state of being deformed into a concave shape in the direction in which the thin film forming material travels, the conventional method
  • the adhesion between the contact surface 1 A of the substrate 1 and the contact surface 1 1 A of the contact portion 1 1 can be improved as compared with the case where the concave surface shape is not deformed, and cooling at the time of sputtering and the like
  • the cooling efficiency of the substrate 1 through the passage 1 1 C can be improved.
  • the outer peripheral portion of the substrate 1 is held by the mechanical chuck 15, even the substrate 1 having no through hole at the center portion can be positioned and held well. By combining with the positioning and holding by the engaging portions 1 B and 1 IB, it becomes possible to achieve the positioning and holding of the substrate 1 with higher reliability and high accuracy.
  • the metal thin film is formed by covering the outer peripheral portion of the substrate 1.
  • a mask 40 comes in contact with the surface 1 C to be treated of the substrate 1, abnormal discharge may occur between the thin film and the mask 40 during film formation. .
  • This is not preferable because it may adversely affect the thin film formation (for example, occurrence of film thickness abnormality at or near the abnormal discharge portion).
  • the surface 1 C to be processed of the substrate 1 and the mask 40 be held at a minute interval t (see FIG. 3, FIG. 6, and FIG. 7).
  • the through hole opened in the central portion of the substrate is positioned and held as a reference for positioning, and is not held at the outer peripheral portion of the substrate 1.
  • the substrate 1 Of the substrate 1, and the influence of variations in processing accuracy and holding accuracy, minute vibrations, etc. tends to increase at the outer peripheral portion of the substrate 1).
  • the risk of contact with treated surface 1 C was relatively high.
  • the peripheral portion of the substrate 1 can be held by the mechanical chuck 15, the peripheral portion of the substrate 1 can be held extremely well.
  • the possibility of the mask 40 coming into contact with the processed surface 1 C of the substrate 1 at the outer peripheral portion of 1 can be avoided as much as possible, thereby minimizing the adverse effect on the thin film formation by the abnormal discharge. As a result, the yield can be greatly improved, and the productivity can be greatly improved.
  • the engaging portion 1 B is provided at the central portion of the substrate 1 and the engaging portion 1 1 B is provided at the abutting portion 11.
  • the present invention is limited to this. It is not a thing. That is, for example, with the engagement portions 1 B and 1 IB being omitted, the surface to be treated becomes a concave shape via the mechanical chuck 15 and the contact surface 1 1 A formed in a concave shape. Thus, the substrate 1 can be deformed and positioned and held in the holding device 10. Of course, even in such a case, the various effects described above can be achieved.
  • this enables the handle (positioning and holding) to be distinguished without distinction between the conventional substrate having a through hole at the central portion and the substrate without a through hole at the central portion. It is possible to avoid the specialization of and to maintain a high degree of freedom in production system design.
  • the through hole of the conventional substrate having a through hole at the central portion can also be used as the engaging portion 1 B of the substrate 1 having no penetration at the central portion described in the present embodiment.
  • the engaging portion 1 1 B of the contact surface 1 1 A should be formed in a convex shape toward the side of the substrate to be held.
  • the present invention is not limited to this.
  • the sputtering process is performed on the to-be-processed surface (In the case where the sputtering process is performed such that the surface to be treated of the disk-like member has a concave shape in the direction in which the thin film forming material is traveling)
  • the quality for example, the film thickness of the thin film formed on the secretive back surface of the disk-like member, as compared to the case where the substrate surface is disposed flat and substantially orthogonal to the direction in which the thin film forming material travels as before.
  • the surface of the disc-like member opposite to the surface to be treated (that is, the back surface of the disc-like member)
  • the adhesion between the surface and the surface can be enhanced, so that the efficiency of cooling the discoid member performed via the contact surface can be enhanced at the time of spattering and the like.
  • the disc-like member is held via the engagement means and the outer peripheral holding means, it is possible to position and hold well even if the disc-like member does not have a through hole at the center part. It becomes.
  • the outer peripheral portion of the disk-like member can be held well, so that the surface to be treated of the disk-like member When forming a thin metal film or the like using sputtering, a mask provided with a predetermined gap from the surface to be treated, and a circle, so that the thin metal film or the like is not formed on the outer peripheral portion of the disc-like member Contact between the plate-like member and the surface to be treated can be reliably prevented, so that abnormal discharge caused by the contact can be prevented, and thus adverse effects on thin film formation can be avoided as much as possible. Productivity can be greatly improved.

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  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

L'invention concerne un dispositif de retenue d'un élément de type disque capable de placer et de retenir un élément de type disque même si ce dernier ne comporte aucun trou central. Une plaque de base (1) est pourvue d'une partie enclenchement (1B), et une partie butée (11) sur le côté retenant la plaque de base (1) est pourvue d'une partie enclenchement (11B). La plaque de base (1) est retenue par ces parties enclenchement dans le dispositif de retenue (10). Un mandrin mécanique (15) retient la périphérie extérieure de la plaque de base (1). Il retient la plaque de base en la déformant de manière concave, le placement et la retenue de manière satisfaisante devenant ainsi possibles même si la plaque de base (1) ne possède pas de trou central, ce qui favorise l'uniformisation de la qualité de films minces fabriqués par pulvérisation. En outre, il est possible de renforcer le contact étroit entre des surfaces contiguës (1A, 11A), ce qui améliore le refroidissement de la plaque de base (1) lors de la pulvérisation ou d'un processus analogue.
PCT/JP2003/002692 2002-03-07 2003-03-07 Dispositif de retenue d'element de type disque WO2003074756A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020047013885A KR100606314B1 (ko) 2002-03-07 2003-03-07 원판형 부재 보유 지지 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002-061624 2002-03-07
JP2002061624A JP4082566B2 (ja) 2002-03-07 2002-03-07 円板状部材保持装置

Publications (1)

Publication Number Publication Date
WO2003074756A1 true WO2003074756A1 (fr) 2003-09-12

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CN102443776B (zh) * 2011-06-10 2013-06-26 星弧涂层科技(苏州工业园区)有限公司 聚焦反射镜的镀膜夹具
JP6110664B2 (ja) * 2013-01-07 2017-04-05 三菱重工業株式会社 蒸着用基板保持トレイを備える真空蒸着装置
CN114434242B (zh) * 2022-02-21 2023-02-17 无锡芯坤电子科技有限公司 一种晶圆打磨设备及其使用方法

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JPH07275780A (ja) * 1994-04-07 1995-10-24 Tokyo Ohka Kogyo Co Ltd 回転カップ式処理装置
JPH08227687A (ja) * 1995-02-22 1996-09-03 Ishikawajima Harima Heavy Ind Co Ltd イオンシャワードーピング装置
JPH09217173A (ja) * 1996-02-14 1997-08-19 Nissin Electric Co Ltd 基板保持装置およびそれへの基板装着方法
JPH09320799A (ja) * 1996-05-27 1997-12-12 Hitachi Ltd プラズマ処理装置およびプラズマ処理方法
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JP2002170871A (ja) * 2000-12-04 2002-06-14 Kyocera Corp 静電チャック

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JPH04280969A (ja) * 1991-03-08 1992-10-06 Fujitsu Ltd スパッタリング方法
JPH07275780A (ja) * 1994-04-07 1995-10-24 Tokyo Ohka Kogyo Co Ltd 回転カップ式処理装置
JPH08227687A (ja) * 1995-02-22 1996-09-03 Ishikawajima Harima Heavy Ind Co Ltd イオンシャワードーピング装置
JPH09217173A (ja) * 1996-02-14 1997-08-19 Nissin Electric Co Ltd 基板保持装置およびそれへの基板装着方法
US5820684A (en) * 1996-03-15 1998-10-13 Sgs-Thomson Microelectronics S.A. Substrate support for an evaporation installation
JPH09320799A (ja) * 1996-05-27 1997-12-12 Hitachi Ltd プラズマ処理装置およびプラズマ処理方法
JP2002170871A (ja) * 2000-12-04 2002-06-14 Kyocera Corp 静電チャック

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CN1639382A (zh) 2005-07-13
KR20040091104A (ko) 2004-10-27
JP2003263799A (ja) 2003-09-19
CN1327029C (zh) 2007-07-18
JP4082566B2 (ja) 2008-04-30
TW200304138A (en) 2003-09-16
TWI256046B (en) 2006-06-01

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