TW200304138A - Disk-like member holding device - Google Patents

Disk-like member holding device Download PDF

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Publication number
TW200304138A
TW200304138A TW092104966A TW92104966A TW200304138A TW 200304138 A TW200304138 A TW 200304138A TW 092104966 A TW092104966 A TW 092104966A TW 92104966 A TW92104966 A TW 92104966A TW 200304138 A TW200304138 A TW 200304138A
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Taiwan
Prior art keywords
substrate
shaped member
disc
holding
abutting
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TW092104966A
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Chinese (zh)
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TWI256046B (en
Inventor
Masato Koshikawa
Hideki Ishizaki
Atsushi Emoto
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Tdk Corp
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Publication of TWI256046B publication Critical patent/TWI256046B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B17/00—Guiding record carriers not specifically of filamentary or web form, or of supports therefor
    • G11B17/02—Details
    • G11B17/022—Positioning or locking of single discs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

There is provided a disk-like member holding device capable of satisfactorily positioning and holding a disk-like member even if the latter has no central through-hole. A base plate (1) is provided with an engaging section (1B), and an abutting section (11) on the side holding the base plate (1) is provided with an engaging section (11B). It is through these engaging sections that the base plate (1) is held in the holding device (10). A mechanical chuck (15) holds the outer periphery of the base plate (1). It holds the base plate (1) by concavely deforming the latter. This makes satisfactory positioning and holding possible even if the base plate (1) has no central through-hole, promoting uniformization of the quality of thin films formed by sputtering. Furthermore, it is possible to enhance close contact between abutting surfaces (1A, 11A) to improve the cooling efficiency of the base plate (1) during sputtering or the like process.

Description

200304138 0) 玖、發明說明 【發明所屬之技術領域】 本發明係關於圓板狀構件的保持裝置，例如對圓板狀 構件實施預定的處理（例如薄膜形成等）時所利用的保持裝 置。 【先前技術】 習知以來，在圓板狀構件（圓盤狀的基板）形成各種薄 膜而製造的記錄媒體（以下也僅稱爲圓盤（d i s k))例如存在 CD、CD-R、CD-RW 等的 CD 系磁碟（d i s k)，D VD - R Ο Μ、 DVD-R等的DVD系磁碟等的光碟，或MO、MD等的光磁 碟等種種的記錄媒體。這些磁碟可藉由對由例如由聚碳酸 酯 （polycarbonate)等的原料構成的基板，使用濺鍍 (sputter)處理、旋塗（spin coat)處理等的種種的處理疊層 薄膜而製造。 成爲這些圓盤的原料的基板一般係利用在其中央部預 先開口的貫通孔來操作（例如對處理裝置的傳入/傳出、薄 膜形成等的各種處理時的定位、保持等）° 例如使用旋塗處理在基板上表面形成由紫外線硬化樹 脂等構成的薄膜的情形，經由插通旋轉台上的旋轉軸到在 基板中央部開口的貫通孔等，以定位、固定（保持）旋轉台 的略中央位置。而且，伴隨著旋轉台使基板旋轉，一邊使 配設於賦予（滴下等）樹脂用的賦予臂的前端部等的賦予口 由前述貫通孔的附近朝基板外周側移動’一邊對基板表面 ~ 6 - (2) (2)200304138 賦卞樹脂’藉由利用因旋轉台的旋轉造成的離心力等使該 賦予的樹脂擴散到基板表面全體，以形成均質的薄膜。 但疋’本案申請人等分析淸楚在上述旋塗處理中，對 於更提高所形成的薄膜的品質，採用無貫通孔的基板由基 板中央部附近開始樹脂的賦予是有效。特別是爲了更提高 光fe的錄密度’在使用波長短的例如藍色雷射光進行資 料的記錄/再生等的情形，與使用習知中的波長較長的紅 色雷射光的情形比較，因更進一步薄的均質性高的薄膜被 要求，故使用無貫通孔的基板以其中央部附近作爲樹脂賦 予的始點更進一步被要求。 伴隨於此，本案申請人等提出在旋塗處理中，可容易 且高精度地操作以及處理在中央部無貫通孔的基板的裝置 、方法等，惟在旋塗處理以外的處理（當然含薄膜形成用 的一連的處理，也含與薄膜形成用的一連的處理不同的處 理）中，可容易且高品質地操作進而處理在中央部分無貫 通孔的基板被要求。即若考慮生產性等的話，不改變操作 方法而能處理在中央部分無貫通孔的基板與在中央部分有 貫通孔的基板較佳，且例如在旋塗處理後，爲了以後的處 理而另外設置釋放貫通孔的製程也被考慮，但此將招致裝 置的專用化等並且使生產系統設計的自由度等變窄，故不 佳。 【發明內容】 本發明乃鑒於上述實情所進行的創作，目的爲提供較 -7- (3) (3)200304138 簡單且廉價的構成，同時不管貫通孔的有無可精度佳地保 持圓板狀構件的保持裝置。 因此，與本發明有關的圓板狀構件保持裝置爲： 包含使前述圓板狀構件的被處理面成爲預定的凹面形 狀而使圓板狀構件變形來保持的保持手段而構成。 如此’令圓板狀構件的被處理面成爲預定的凹面形狀 而使其變形保持的話，例如在對前述被處理面進行濺鍍處 理的情形（對薄膜形成物質的飛來方向使圓板狀構件的被 處理面成爲凹面形狀而進行濺鍍處理的情形）中，與如習 知對薄膜形成物質的飛來方向略直交平坦地配設基板表面 的情形比較，可促進形成於圓板狀構件的秘處背面的薄膜 品質（例如膜厚等）的均勻化。 再者，與如習知的變形成凹面形狀的情形比較，因可 提高圓板狀構件的被處理面與相反側的面（即圓板狀構件 的背面）與和此相反側的面對接的保持裝置的對接面的密 著性，故在濺鍍處理時等中也能改善經由前述對接面進行 的圓板狀構件的冷卻效率。 此外，前述保持手段可包含： 與前述圓板狀構件的被處理面的相反側的面對接’形 成應使圓板狀構件的被處理面變形成預定的凹面形狀的凹 面形狀的對接面；以及 一邊使前述對接面與圓板狀構件的被處理面的相反側 的面對接，使前述被處理面變形成預定的凹面形狀’ 一邊 經由配設於前述圓板狀構件的圓板狀構件側卡合部與配哉: -8- (4) 200304138 於前述對接面的對接面側卡合部，卡合圓板狀 對接面的卡合手段，而構成。 而且，前述保持手段可包含： 與前述圓板狀構件的被處理面的相反側的 成應使圓板狀構件的被處理面變形成預定的凹 面形狀的對接面；以及 一邊使前述對接面與圓板狀構件的被處理 的面對接，使前述被處理面變形成預定的凹面 保持前述圓板狀構件的外周部的外周保持手段 如上述，若經由卡合手段或外周保持手段 狀構件的話，例如即使爲在中央部無貫通孔的 也能良好地定位保持。 再者，若經由外周保持手段以保持圓板狀 部的話，因可良好地保持圓板狀構件的外周部 成如以下的作用功效。 即在圓板狀構件的被處理面使用濺鍍處理 射膜的金屬薄膜等時，因使在圓板狀構件的外 有金屬薄膜等，而可確實地防止前述被處理面 間隙而配設的遮罩（mask)與圓板狀構件的被處 ’故可防止因該接觸所產生的異常放電，因此 免對薄膜形成的不良影響（例如異常放電部或 膜厚異常的發生等），進而使良率被大幅改善 性。 構件與前述 面對接，形 面形狀的凹 面的相反側 形狀，一邊 ，而構成。 以保持圓板 圓板狀構件 構件的外周 ，故也能完 形成當作反 周部不形成 與具有預定 理面的接觸 ，可極力避 其附近中的 可提高生產 (5) (5)200304138 【實施方式】 以下根據添附的圖面詳細地說明本發明的一實施形態 〇 圖1是顯示在本發明的一實施形態中，包含爲了濺鍍 處理圓板狀的基板（圓板狀構件）1而保持的保持裝置1 〇而 構成的濺鍍裝置側傳送臂12。 保持裝置1 0具備保持（夾住）在中央部無貫通孔的圓 板狀的基板1時對接於基板1的對接部1 1。對接部Η的 對接面1 1 A如圖1、圖3等所示，在基板1被按壓於對接 部1 1側基板1被密著於對接面1 1 A時，令基板1由後述 的大氣側傳送臂1 3側看變形成凹面形狀，即對由後述的 吸附軸1 4產生的對基板1的按壓力的作用方向A4(換言 之對濺鍍處理中的基板1的薄膜形成物質的飛來方向）形 成凹面形狀。前述凹面形狀可令成球面形狀。 而且，如圖8詳細顯示地，在前述對接部1 1的_接 面1 1 A突設（或刻設）有與刻設（或突設）於基板1的對接面 1 A的卡合部1 B卡合用的卡合部1 1 B。此外’卡合部1 B '卡合部1 1 B若爲可預定地卡合以及脫離（卡合的釋放）的 話佳，因此，其形狀、構造、個數、配置、位置、大小等 並非限定於圖面所示的一例。 此處，前述基板1的對接面1A是相當於與本發明有 關的[圓板狀構件的被處理面的相反側的面]’前述卡合部 1 B是相當於與本發明有關的圓板狀構件側卡合部’前述 卡合部Π B是相當於與本發明有關的對接面側卡合部’前 -10- (6) (6)200304138 述卡合部1 B、1 1 B構成與本發明有關的卡合手段。 保持裝置]0安裝於濺鍍裝置側傳送臂1 2，保持裝置 1 0如以下所述，一邊達成基板1的良好的定位保持，一^ 邊由大氣側傳送臂1 3接受基板1以及遮罩4 0。 即 (1 )、大氣側傳送臂1 3藉由吸附軸1 4透過例如負壓 等吸附保持在中央部無貫通孔的基板1的略中央部，將基 板1傳送到對接部11附近，使基板1的對接面1A與對 接部1 1的對接面1 1 A面對而動作（參照圖4)。 (2)、其次，大氣側傳送臂i 3在基板丨接近對接部！ ！ 的對接面1 1 A的方向移動，使頂出銷（knock pi n)13 A與頂 出孔2〇A卡合而動作（參照圖4、圖5等） (3 )、若基板1的對接面1 A與對接部1 1的對接面 1 1 A預定地對接的話，藉由吸附保持基板1的吸附軸j 4 將基板1的中央部預定地按壓到對接部1 1側（參照圖5等 )° 此時’與藉由大氣側傳送臂1 3的磁石部3 0的磁力而 吸附保持的基板1 一起傳送來的遮罩40對接於濺鍍裝置 側傳送臂1 2的磁石部]2 A，藉由該磁石部1 2 A的磁力也 吸附保持於濺鍍裝置側傳送臂12側（參照圖1、圖4、圖 5等）。 (4 )、如前述若基板1的中央部因吸附軸1 4而被預定 地按壓到對接部1 1側的話，使配設於基板1的對接面1 A 的卡合部1 B與配設於保持裝置1 〇的對接部1 1的對接面 -11 - (7) 200304138 II A的卡合部〗！ b卡合，使對保持裝置1 0的 位與保持被進行。 此外如已述，因基板1所對接的保持裝置 部1 1的對接面1 1 A對朝基板1的由吸附軸1 壓力的作用方向 A4形成凹面形狀，故在本實 基板1在沿著對接面1 1 A的凹面形狀對按壓 向A4變形成凹面形狀的狀態下被前述卡合部 位保持。 (5)、其次，爲了使對基板丨的保持裝置 1 1 A)的定位保持更確實，在本實施形態中，藉 發明有關的外周保持手段功能的機械夾頭15 基板1的外周。此外，使基板1良好地密著於 的凹面形狀，一邊藉由前述吸附軸14預定地 一邊進行藉由機械夾頭1 5的保持動作較佳。 具體上如圖1〜圖5等所示，具備機械夾頭 (基板1的保持、釋放）用的凸輪溝槽16的夾 環2 0對對接部1 1可繞保持裝置1 〇的對接部] 相對旋轉，安裝於濺鍍裝置側傳送臂12。在£ 插入有凸輪隨動件（c a m f ο 11 〇 w e r) 1 7，在該凸_ 經由軸1 8安裝有機械夾頭1 5。此外，對接部 持部2 1的中心軸係與基板1的中心軸A —致^ 前述軸1 8在包含該軸1 8的中心軸B與基 軸A的平面內（即圖3平面內）中略平行地延伸 中心軸A。 基板1的定 1 〇的對接 4產生的按 施形態中， 力的作用方 1 B、1 1 B 定 1〇(對接面 由作爲與本 預定地保持 對接面1 1 A 按壓基板1 ί 1 5的開關 頭開關凸輪 t 1的中心軸 ^輪溝槽1 6 I隨動件1 7 1 1以及支 ί配設。 板1的中心 於基板1的 -12- (8) (8)200304138 而且，與軸1 8略直交沿著包含軸1 8的中心軸B與基 板1的中心軸A的平面（圖3平面）延伸的滑動溝槽19係 配設於支持保持裝置〗〇的對接部1 1的支持部2 1。 在此滑動溝槽19前述軸18移動自如地插通於該滑動 溝槽19的縱向（在圖2、圖3等中爲Z方向）。而且，安裝 於軸1 8的機械夾頭1 5係在滑動溝槽1 9的縱向（在圖2中 爲Z方向）移動自如地嵌插於楔行榫溝槽1 5 A ° 此外，前述凸輪溝槽16如圖2所示對夾頭開關凸輪 環20的圓周方向（X方向）延伸於預定交叉的方向（Y方向） ，在圖2的平面中夾頭開關凸輪環2 0對保持裝置1 〇、對 接部1 1進而對基板1相對地在X方向轉動的話，移動自 如地嵌插於該凸輪溝槽1 6的前述凸輪隨動件1 7變成接受 來自凸輪溝槽1 6的作用。此時，安裝於凸輪隨動件1 7的 軸〗8因可移動自如地收納於滑動溝槽1 9，故若接受來自 前述凸輪溝槽1 6的作用的話，凸輪隨動件1 7進而軸1 8 變成沿著滑動溝槽19在圖2、圖3等所示的Z方向移動 〇 更詳細爲若夾頭開關凸輪環20在圖2中順時鐘方向 轉動的話，各個凸輪隨動件1 7進而軸1 8在Z方向中在接 近中心軸A的方向移動，故安裝於各個軸1 8的機械夾頭 I5也沿著前述楔行榫溝槽15A在同方向移動。因此，成 爲機械夾頭15預定地保持保持於對接部U的基板1的外 周部。 另一方面，若夾頭開關凸輪環20在圖2中逆時鐘方 -13- 200304138 Ο) 向轉動的話，各個凸輪1 7進而軸1 8在Z方向中於由中心 軸A離開的方向移動，故安裝於各個軸1 8的機械夾頭1 5 也沿著前述楔行榫溝槽15A在同方向移動。因此，成爲 機械夾頭1 5釋放保持於對接部1 1的基板1的外周部。 此外，夾頭開關凸輪環20的機械夾頭1 5的開關用的 轉動可由繞卡合於配設於該夾頭開關凸輪環20的頂出孔 20 A的大氣側傳送臂1 3的頂出銷1 3 A的中心軸A的轉動 動作而構成。 (6)、如前述若進行藉由機械夾頭1 5保持基板1的外 周部的動作的話，接著支持大氣側傳送臂1 3的磁石部3 0 的磁石保持器3 1在大氣側傳送臂1 3的圖5中於右方向後 退，釋放磁石部3 0的磁力造成的對遮罩40的吸附保持。 在本實施形態中如圖5所示，大氣側傳送臂1 3的構 成要素隔裝於遮罩40與磁石部3 0之間的按壓構件3 2因 預定按壓遮罩40於濺鍍裝置側傳送臂1 2側，故在使磁石 保持器3 1進而磁石部3 0朝圖5的右方向後退時，抵抗磁 石部3 0對遮罩4 0的吸附保持力，可良好地使磁石保持器 31進而磁石部30朝圖5的右方向後退。 此外，即使磁石保持器3 1進而磁石部3 0在圖5中於 右方向移動磁石部3 0由遮罩40離開也如已經敘述，遮罩 4〇因被濺鍍裝置側傳送臂12的磁石部12A的磁力吸附保 持，故處罩4 0可良好地被保持於薇鍍裝置側傳送臂1 2的 預定位置。 如以上，在本實施形態中可將大氣側傳送臂 -14- (10) (10)200304138 持的基板1與遮罩40交接到濺鍍裝置側傳送臂1 2，且對 濺鍍裝置側傳送臂12基板1可被預定地定位保持。 而且，濺鍍裝置側傳送臂1 2經由未圖示的濺鍍處理 部的支架（h 〇 u s i n g)等與接合部5 0連接，然後支架內被真 空排氣，預定地實行對基板1的濺鍍處理。 在濺鍍處理後將濺鍍裝置側傳送臂12所保持的基板 1與遮罩4〇交接到大氣側傳送臂1 3，而相關的動作可藉 由進行與在上述（1)-(6)中所述的順序相反的動作來達成。 此外，在釋放機械夾頭1 5所產生的基板1的外周部 的保持動作時，爲了極力排除在對形成於基板1上的薄膜 等的釋放時所產生的衝擊等造成的不良影響等，可一邊藉 由前述吸附軸1 4預定地按壓基板1的中央部一邊釋放機 械夾頭1 5所產生的保持動作。即在釋放機械夾頭1 5時， 預先以吸附軸1 4預定地按壓基板1的中央部後，釋放機 械夾頭15，然後慢慢地釋放藉由前述吸附軸14的對基板 1的中央部的按壓後，經由藉由吸附軸14產生的基板1 的吸附力的前述卡合部1 B、1 1 B的卡合釋放進而進行對 預定位置的基板1的傳送等較佳。 如以上說明如果依照本實施形態，用以在基板1配設 卡合部1 B ’在保持基板1的側的對接部1 1配設卡合部 1 1 B，經由這些卡合部保持基板1於保持裝置1 〇，故即使 爲例如在中央部無貫通孔的基板1對保持裝置1 〇也能良 好地定位保持° 而且，在本實施形態中令與對接部1 ]的基板1的對 -15- (11) (11)200304138 接面1 1 A爲凹面形狀’使所保持的基板1的被處理面成 爲凹面形狀（例如對濺鍍處理中的薄膜形成物質的飛來方 向使基板1變形成凹面形狀），在相關狀態中對基板1的 被處理面1 C進行濺鍍處理。 如此，基板1若在對薄膜形成物質的飛來方向變形成 凹面形狀的狀態下對被處理面1C進行濺鍍處理的話，與 如習知對薄膜形成物質的飛來方向略直交平坦地配設基板 表面的情形比較，可促進形成於基板表面的薄膜品質（例 如膜厚等）的均勻化。 再者，因基板1在對薄膜形成物質的飛來方向變形成 凹面形狀的狀態下對接於對接部1 1的對接面1 1 A，故與 如習知的變形成凹面形狀的情形比較，可提高基板1的對 接面1 A與對接部1〗的對接面1 a的密著性，可改善經由 濺鍍處理時等中的冷卻通道1 1 C的基板1的冷卻效率。 此外’在本實施形態因藉由機械夾頭1 5以保持基板 1的外周部，故例如即使爲在中央部無貫通孔的基板1也 能良好地定位保持，藉由與利用前述卡合部1 B、Π B的 定位保持的組合，可達成更確實高精度的基板1的定位保 持。 再者5若藉由機械夾頭1 5保持基板1的外周部的話 tb目^元成如以下的作闬功效。 即遮罩40爲在基板1的被處理面1 c使用濺鍍處理形 既作爲反射膜的金屬薄膜等時，藉由覆蓋基板1的外周部 而不形成有前述金屬薄膜而被使用，惟若相關的遮罩4 〇 -16- (12) (12)200304138 與基板1的被處理面1c接觸的話，有在膜形成時於薄膜 與遮罩4 0之間發生異常放電的情形。此點有帶給薄膜形 成不良影響之虞（例如異常放電部或其附近中的膜厚異常 的發生等）’故不佳。因此，基板1的被處理面1 C與遮罩 40空出微小間隔U參照圖3、圖6、圖7)而保持較佳。 但是，在習知中因令在基板中央部開口的貫通孔爲定 位基準而進行定位保持，使基板1的外周部中的保持未被 進行，故因種種的要因（習知因保持基板1的中心部，故 加工精度或保持精度的誤差、微小振動等的影響在基板1 的外周部中有變大的傾向），使在基板1的外周部中遮罩 40與基板1的被處理面1C接觸之虞較高。 另一方面在本實施形態中如已述，因以可藉由機械夾 頭1 5保持基板1的外周部的構成，使基板1的外周部的 保持極爲良好，故可極力避免在基板1的外周部中遮罩 4 〇與基板1的被處理面1 C接觸之虞，因此，可使因異常 放電造成的對薄膜形成的不良影響止於最小，進而可大幅 地改善良率可格外提高生產性。 此外，在本實施形態雖然以在基板1的中央部配設卡 合部1 B，在對接部1丨配設卡合部n B來說明，惟本發 明並非限定於此。即例如省略卡合部1 β、Π B，令經由機 械央頭1 5與形成凹面形狀的對接面1 1 Α使被處理面成凹 面形狀而使基板1變形，以定位保持於保持裝置10的構 成也可以。即使在相關的情形當然也能完成上述的各種功 效。而且，據此，即使爲習知的在中央部有貫通孔的基板 -17- (13) (13)200304138 或在中央部無貫通孔的基板，也可不區別兩者而操作（定 位保持），可避免裝置的專用化等，並且可高高地維持生 產系統設計的自由度等。 而且，例如令習知的在中央部有貫通孔的基板的該貫 通孔爲在本實施形態說明的在中央部無貫通孔的基板1的 卡合部1 B而利用也可以。在相關的情形中，對接面1 1 A 的卡合部1 1 B應朝被保持的基板側成爲凸形狀而形成當然 也可以。 在上述實施形態雖然對圓板狀構件的處理的一例係針 對濺鍍處理來說明，惟本發明並非限定於此。 如以上的說明如果依照本發明，令圓板狀構件的被處 理面成爲預定的凹面形狀而使其變形保持的話，例如在對 前述被處理面進行濺鍍處理的情形（對薄膜形成物質的飛 來方向使画板狀構件的被處理面成爲凹面形狀而進行濺鍍 處理的情形）中，與如習知對薄膜形成物質的飛來方向略 直交平坦地配設基板表面的情形比較，可促進形成於圓板 狀構件的秘處背面的薄膜品質（例如膜厚等）的均勻化。 再者，與如習知的變形成凹面形狀的情形比較，因可 提高圓板狀構件的被處理面與相反側的面（即圓板狀構件 的背面）與和此相反側的面對接的保持裝置的對接面的密 著性，故在濺鍍處理時等中也能改善經由前述對接面進行 的圓板狀構件的冷卻效率。 而且，因經由卡合手段或外周保持手段以保持圓板狀 構件，例如即使爲在中央部無貫通孔的圓板狀構件也能良 -18- (14) (14)200304138 好地定位保持。 再者，因經由外周保持手段以保持圓板狀構件的外周 部，可良好地保持圓板狀構件的外周部，故在圓板狀構件 的被處理面使用濺鍍處理形成當作反射膜的金屬薄膜等時 ，因使在圓板狀構件的外周部不形成有金屬薄膜等，而可 確實地防止前述被處理面與具有預定間隙而配設的遮罩與 圓板狀構件的被處理面的接觸，故可防止因該接觸所產生 的異常放電，因此，可極力避免對薄膜形成的不良影響， 進而使良率被大幅改善可大幅提高生產性。 【圖式簡單說明】 圖1是顯示包含與本發明的一實施形態有關的圓板狀 構件的保持裝置而構成的濺鍍裝置側傳送臂的一例的剖面 圖。 圖2是圖1所示的濺鍍裝置側傳送臂的頂視圖。 圖3是圖1中的C部的擴大圖。 圖4是說明在大氣側傳送臂與濺鍍裝置側傳送臂之間 進行的圓板狀構件（基板）的交接動作（交接前的狀態）的圖 〇 圖5是說明在大氣側傳送臂與濺鍍裝置側傳送臂之間 進行的圓板狀構件（基板）的交接動作（交接後的狀態）的圖 c 圖6是圖5中的a部的擴大圖。 圖7是圖5中的b部的擴大圖。 -19- (15) (15)200304138 圖8是圖5中的c部的擴大圖 〔符號說明〕 1 ：基板 1 B、1 1 B : 卡合部 1 C :被處理面 1 〇 :保持裝置 1 1 :對接部 1 1 A :對接面 1 2 :濺鍍裝置側傳送臂 1 2 A、3 0 :磁石部 1 3 :大氣側傳送臂 1 3 A :頂出銷 1 4 :吸附軸 1 5 :機械夾頭 15A:楔行榫溝槽 I 6 :凸輪溝槽 1 7 :凸輪隨動件 1 8 :軸 1 9 :滑動溝槽 20:夾頭開關凸輪環 20A:頂出孔 3 1 :磁石保持器 4 0 : 遮罩 -20-200304138 0) Description of the invention [Technical field to which the invention belongs] The present invention relates to a holding device for a disk-shaped member, for example, a holding device used when a predetermined processing (such as film formation) is performed on a disk-shaped member. [Prior Art] Conventionally, recording media (hereinafter also simply referred to as disks) manufactured by forming various films on a disc-shaped member (disc-shaped substrate) include, for example, CD, CD-R, and CD- Various recording media such as CD-based disks such as RW, DVD-ROMs such as DVD-ROM, DVD-R and other optical disks such as MO and MD. These magnetic disks can be produced by laminating a substrate made of a raw material such as polycarbonate with various processes such as a sputtering process and a spin coat process. The substrate used as a raw material for these discs is generally operated by using a through-hole which is opened in the central portion (for example, positioning and holding during various processes such as the introduction / emission of a processing device, film formation, etc.) ° For example When spin coating is used to form a thin film made of UV-curable resin on the upper surface of the substrate, the rotary table is inserted through a rotary shaft on the rotary table to a through hole opened in the center of the substrate to position and hold the rotary table. Central location. In addition, as the substrate is rotated by the turntable, the application port provided on the tip portion of the application arm for applying (dropping, etc.) resin is moved toward the outer periphery of the substrate from the vicinity of the through hole to the substrate surface ~ 6 -(2) (2) 200304138 Fuming resin 'uses a centrifugal force caused by the rotation of the turntable to spread the given resin to the entire surface of the substrate to form a homogeneous film. However, in the analysis of the applicant of the present case, in the above-mentioned spin coating process, in order to further improve the quality of the formed thin film, it is effective to apply resin from the vicinity of the central portion of the substrate using a substrate having no through-holes. In particular, in order to further increase the recording density of the light fe, in the case of using a short wavelength such as blue laser light for data recording / reproduction, etc., it is compared with the case of using a conventional red laser light with a longer wavelength, because Further thinner and more highly homogeneous thin films are required. Therefore, the use of a substrate without through-holes with the vicinity of the central portion as the starting point for resin application is further required. Along with this, the applicants of this case proposed devices and methods that can easily and accurately handle and process substrates without through-holes in the center during spin coating processes, but processes other than spin coating processes (including film of course) The continuous processing for forming also includes a processing different from the continuous processing for forming thin films), and it is required to be easy and high-quality to handle a substrate without a through hole in the central portion. That is, if productivity is taken into consideration, substrates without through holes in the central portion and substrates with through holes in the central portion are preferably processed without changing the operation method. For example, after spin coating, it is provided separately for subsequent processing. The process of releasing the through-holes is also considered, but this will lead to the specialization of the device and the like, and will narrow the degree of freedom in the design of the production system, etc., which is not good. [Summary of the Invention] The present invention has been made in view of the above facts, and aims to provide a simpler and cheaper structure than -7- (3) (3) 200304138, while maintaining a disc-shaped member with high accuracy regardless of the presence or absence of through holes Holding device. Therefore, the disk-shaped member holding device according to the present invention is configured to include holding means for deforming and holding the disk-shaped member while holding a processed surface of the disk-shaped member into a predetermined concave shape. When the processed surface of the disk-shaped member is shaped into a predetermined concave shape and deformed and held in this way, for example, when the surface to be processed is subjected to a sputtering process (the disk-shaped member is formed in the direction in which the thin film-forming material is coming in). In the case where the surface to be processed has a concave shape and is subjected to a sputtering process), as compared with a case where the substrate surface is arranged flatly at right angles to the direction in which the thin film-forming material is flying, as is conventionally known, the Uniformity of film quality (such as film thickness) on the back of the secret place. In addition, compared with the conventional case where the shape of the concave surface is changed, it is possible to increase the contact between the treated surface of the disc-shaped member and the surface on the opposite side (that is, the back surface of the disc-shaped member) and the face on the opposite side. Because of the closeness of the abutting surface of the holding device, the cooling efficiency of the disc-shaped member through the abutting surface can be improved even during a sputtering process or the like. In addition, the holding means may include: abutting surfaces that form a concave shape that faces the opposite side of the processed surface of the disc-shaped member, the recessed shape that should transform the processed surface of the disc-shaped member into a predetermined concave shape; And the abutting surface and the opposite side of the treated surface of the disc-shaped member are brought into contact with each other, and the treated surface is formed into a predetermined concave shape, while passing through the disc-shaped member disposed on the disc-shaped member Side engaging portion and fitting: -8- (4) 200304138 The abutting surface side engaging portion on the abutting surface is configured by engaging means of a disc-shaped abutting surface. Further, the holding means may include a butting surface that forms a predetermined concave shape on the opposite side of the treated surface of the disc-shaped member from the treated surface of the disc-shaped member; The treated surface of the disc-shaped member is brought into contact with each other to change the processed surface into a predetermined concave surface. The outer-peripheral retaining means for retaining the outer peripheral portion of the disc-shaped member is as described above. For example, even if there is no through hole in the center, it can be well positioned and held. Furthermore, if the disc-shaped portion is held by the outer-circumferential holding means, the outer-peripheral portion of the disc-shaped member can be favorably held to achieve the following effects. That is, when a thin metal film or the like of a sputter film is used on the treated surface of the disc-shaped member, a metal film or the like is provided on the outside of the disc-shaped member to prevent the gap between the surfaces to be treated. The treatment of the mask and the disc-shaped member prevents the abnormal discharge caused by the contact, and thus avoids adverse effects on the formation of the thin film (such as the occurrence of abnormal discharge portions or abnormal film thickness, etc.). Yield is greatly improved. The member is in contact with the aforesaid surface, and is formed on the opposite side of the concave surface of the shape. In order to maintain the outer periphery of the disc-shaped disc-shaped member, it can also be formed as the anti-peripheral portion does not form contact with a predetermined surface, which can be avoided as much as possible, which can improve production (5) (5) 200304138 [ Embodiment] Hereinafter, an embodiment of the present invention will be described in detail with reference to the attached drawings. FIG. 1 shows an embodiment of the present invention and includes a disc-shaped substrate (disc-shaped member) 1 for sputtering treatment. A sputtering device-side transfer arm 12 constituted by the holding device 10 held. The holding device 10 includes a docking portion 11 that abuts on the substrate 1 when holding (clamping) a disc-shaped substrate 1 without a through hole in the center. As shown in FIG. 1 and FIG. 3, the abutting surface 1 1 A of the abutting portion Η, when the substrate 1 is pressed against the abutting portion 11, and the substrate 1 is closely adhered to the abutting surface 1 1 A, the substrate 1 is exposed to the atmosphere described later. The side transfer arm 13 is deformed into a concave shape when viewed from the side, that is, the direction A4 of the pressing force on the substrate 1 generated by the adsorption shaft 14 described later (in other words, the film-forming material of the substrate 1 in the sputtering process is flying in). Direction) to form a concave shape. The aforementioned concave shape can be formed into a spherical shape. Moreover, as shown in detail in FIG. 8, an engaging portion of the abutting surface 1 1 A of the abutting portion 11 is protruding (or engraved) with the abutting surface 1 A of the substrate 1 (or protruding). 1 B engagement portion 1 1 B for engagement. In addition, the 'engagement part 1 B' is preferable if the engagement part 1 1 B can be predeterminedly engaged and disengaged (release of the engagement). Therefore, its shape, structure, number, arrangement, position, size, etc. are not limited. An example shown in the figure. Here, the abutting surface 1A of the substrate 1 is equivalent to [a surface opposite to the treated surface of the disc-shaped member] according to the present invention. The aforementioned engaging portion 1 B is equivalent to a disc according to the present invention. Shaped member side engaging portion 'the aforementioned engaging portion Π B is equivalent to the abutting surface side engaging portion according to the present invention' front-10- (6) (6) 200304138 The engaging portion 1 B, 1 1 B is configured Engagement means related to the present invention. Holding device] 0 is mounted on the transfer arm 12 of the sputtering device. The holding device 10, as described below, achieves a good positioning and holding of the substrate 1, while receiving the substrate 1 and the mask from the atmospheric side transfer arm 1 3 4 0. That is, (1), the transfer arm 13 on the atmospheric side transmits the substrate 1 to the vicinity of the docking portion 11 through the adsorption shaft 14 through a substantially central portion of the substrate 1 without suction holes and held in the central portion through, for example, negative pressure, etc. The abutment surface 1A of 1 and the abutment surface 1 1 A of the abutment portion 11 face each other and operate (see FIG. 4). (2) Secondly, the atmospheric-side transfer arm i 3 approaches the docking portion on the substrate! !! Move the direction of the butt surface 1 1 A so that the knock pin 13 A is engaged with the eject hole 20A (refer to Fig. 4 and Fig. 5) (3). If the surface 1 A is mated with the mating surface 1 1 A of the mating portion 11, the central portion of the substrate 1 is pressed against the mating portion 11 by the suction axis j 4 of the substrate 1 (see FIG. 5 and the like). ) ° At this time, 'the mask 40 transferred with the substrate 1 which is attracted and held by the magnetic force of the magnetic part 30 of the atmospheric-side transfer arm 13 is connected to the magnet part of the sputtering-device-side transfer arm 12] 2 A The magnetic force of the magnet part 1 2 A is also sucked and held on the side of the transfer arm 12 on the sputtering apparatus side (see FIGS. 1, 4, and 5). (4) As described above, if the central portion of the substrate 1 is pressed to the abutting portion 11 side due to the suction shaft 14, the engaging portion 1 B disposed on the abutting surface 1 A of the substrate 1 and the At the mating surface 11 of the butting portion 11 of the holding device 10-(7) 200304138 II A engagement portion! b is engaged, and the bit 10 and the holding device 10 are held. In addition, as already described, since the abutting surface 1 1 A of the holding device portion 11 to which the substrate 1 is abutted forms a concave shape toward the substrate 1 under the action direction A4 of the pressure of the suction shaft 1, the actual substrate 1 The concave shape of the surface 1 1 A is retained by the aforementioned engagement portion in a state where the concave shape of the surface 1 A is pressed toward A4. (5) Secondly, in order to maintain the positioning of the substrate holding device 1 1 A) more accurately, in the present embodiment, the outer periphery of the substrate 1 is a mechanical chuck 15 functioning as a peripheral holding means related to the invention. In addition, it is preferable that the substrate 1 has a concave shape with which the substrate 1 is closely adhered, and the holding operation by the mechanical chuck 15 is performed while predeterminedly by the suction shaft 14. Specifically, as shown in FIGS. 1 to 5 and the like, a clamping ring 2 having a cam groove 16 for a mechanical chuck (holding and releasing of the substrate 1) 2 butt joint portion 1 1 butt joint portion that can be wound around the holding device 10] They are relatively rotated and mounted on the transfer arm 12 on the sputtering apparatus side. A cam follower (c a m f ο 11 〇 w e r) 1 7 is inserted at £, and a mechanical chuck 15 is mounted at the projection via the shaft 18. In addition, the central axis system of the docking portion holder 21 and the central axis A of the substrate 1 are the same ^ The aforementioned axis 18 is omitted in a plane including the central axis B of the axis 18 and the base axis A (that is, in the plane of FIG. 3). The central axis A extends in parallel. In the application form generated by the butt joint 4 of the substrate 1, the force acting side 1 B, 1 1 B is set to 10 (the butt surface is kept as the butt surface 1 1 A as intended, and the substrate 1 is pressed 1 1 1 The center axis of the switch head switch cam t 1 ^ wheel groove 1 6 I follower 1 7 1 1 and support are provided. The center of the plate 1 is -12- (8) (8) 200304138 of the substrate 1 and A sliding groove 19 extending substantially perpendicularly to the axis 18 along a plane (the plane of FIG. 3) including the central axis B of the axis 18 and the central axis A of the substrate 1 is provided at the butt portion 1 1 that supports the holding device. Supporting part 2 1. Here, the shaft 18 of the sliding groove 19 is freely inserted in the longitudinal direction of the sliding groove 19 (Z direction in FIG. 2 and FIG. 3, etc.). The mechanical chuck 15 is slidably inserted into the dovetail groove 1 5 A in the longitudinal direction (Z direction in FIG. 2) of the sliding groove 19, and the cam groove 16 is shown in FIG. 2 The circumferential direction (X direction) of the chuck switch cam ring 20 extends in a predetermined cross direction (Y direction). The chuck switch cam ring 20 pairs of holding devices 1 in the plane of FIG. 2. When the contact portion 11 further rotates the substrate 1 relatively in the X direction, the cam follower 17 inserted into the cam groove 16 to move freely will receive the action from the cam groove 16. At this time, The shaft mounted on the cam follower 17 is movably accommodated in the sliding groove 19, so if the action from the cam groove 16 is accepted, the cam follower 1 7 and then the shaft 1 8 become Move along the sliding groove 19 in the Z direction shown in FIG. 2, FIG. 3 and the like. In more detail, if the chuck switch cam ring 20 rotates clockwise in FIG. 2, each cam follower 1 7 and then the shaft 1 8 moves in a direction close to the central axis A in the Z direction, so the mechanical chuck I5 mounted on each axis 18 also moves in the same direction along the aforementioned dovetail groove 15A. Therefore, the mechanical chuck 15 is intended to be The outer peripheral portion of the substrate 1 held at the abutting portion U is maintained. On the other hand, if the chuck switch cam ring 20 is turned counterclockwise in FIG. 2 (13-200304138 0), each of the cams 17 and then the shafts 18 is at The machine moves in the direction away from the central axis A in the Z direction, so it is mounted on each axis 18 Head 15 also moves the wedge tongue groove 15A in the same direction. Therefore, the mechanical chuck 15 releases and holds the outer peripheral portion of the substrate 1 held by the docking portion 11. In addition, the turning of the mechanical chuck 15 of the chuck switch cam ring 20 for turning can be performed by ejecting around the atmospheric side transfer arm 13 that is engaged with the ejection hole 20 A provided in the chuck switch cam ring 20. The rotation of the central axis A of the pin 1 3 A is configured. (6) As described above, if the operation of holding the outer peripheral portion of the substrate 1 by the mechanical chuck 15 is performed, the magnet holder 3 1 supporting the magnet portion 3 0 of the atmospheric-side transfer arm 13 is transferred to the atmospheric-side transfer arm 1 In FIG. 3 of FIG. 3, it moves backward in the right direction, and releases the magnetic force of the magnet portion 30 to attract and hold the mask 40. In this embodiment, as shown in FIG. 5, the constituent elements of the atmospheric-side transfer arm 13 are interposed between the pressing member 32 between the mask 40 and the magnet portion 30, and the mask 40 is transported to the sputtering apparatus side by a predetermined pressing. Arm 12 side, so when the magnet holder 31 and the magnet portion 30 are moved back to the right in FIG. 5, the magnet holder 31 can resist the adsorption and holding force of the mask 40 on the magnet portion 31 and the magnet holder 31 can be made good. Further, the magnet portion 30 moves backward in the right direction in FIG. 5. In addition, even if the magnet holder 31 and then the magnet portion 30 move the magnet portion 30 in the right direction in FIG. 5, the magnet portion 30 moves away from the mask 40, as described above, the mask 40 is caused by the magnet of the transfer arm 12 on the sputtering device side. Since the portion 12A is magnetically held and held, the processing cover 40 can be held at a predetermined position of the transfer arm 12 on the side of the plating device. As described above, in this embodiment, the substrate 1 and the mask 40 held by the atmospheric-side transfer arm -14- (10) (10) 200304138 can be transferred to the sputtering device-side transfer arm 12 and transferred to the sputtering device-side The arm 12 substrate 1 can be held in a predetermined position. In addition, the transfer device-side transfer arm 12 is connected to the joint portion 50 via a bracket (not shown) of a sputtering processing section, etc., and the inside of the bracket is evacuated by vacuum, and sputtering of the substrate 1 is performed as scheduled. Plating treatment. After the sputtering process, the substrate 1 and the mask 40 held by the transfer arm 12 on the sputtering device are transferred to the transfer arm 13 on the atmospheric side, and the related actions can be performed by performing the same operations as in (1)-(6) above. The actions described in the reverse order are achieved. In addition, when the holding operation of the outer peripheral portion of the substrate 1 caused by the mechanical chuck 15 is released, in order to try to eliminate adverse effects such as impact caused when the film or the like formed on the substrate 1 is released, etc., The holding operation by the mechanical chuck 15 is released while the central portion of the substrate 1 is pressed in a predetermined manner by the suction shaft 14. That is, when the mechanical chuck 15 is released, the central portion of the substrate 1 is pressed in advance with the suction shaft 14 in advance, and then the mechanical chuck 15 is released, and then the central portion of the substrate 1 through the suction shaft 14 is slowly released. After pressing, it is preferable to transfer the substrate 1 at a predetermined position by releasing the engagement of the engaging portions 1 B and 1 1 B of the substrate 1 by the adsorption force of the substrate 1 by the adsorption shaft 14. As described above, according to the present embodiment, if the engaging portion 1 B 'is provided on the substrate 1, the abutting portion 1 1 on the side holding the substrate 1 is provided with the engaging portion 1 1 B, and the substrate 1 is held via these engaging portions. Since the holding device 10 is held by the holding device 10, for example, it can be positioned and held well even if it is a substrate 1 pair without a through hole in the central portion. Furthermore, in this embodiment, the substrate 1 with the butting portion 1] is- 15- (11) (11) 200304138 The contact surface 1 1 A is concave shape 'make the processed surface of the substrate 1 held to be concave shape (for example, the direction of the flying direction of the film-forming substance during the sputtering process changes the substrate 1). A concave shape is formed), and a to-be-processed surface 1 C of the substrate 1 is subjected to a sputtering process in a related state. In this way, if the substrate 1 is sputter-treated on the treated surface 1C in a state where the flying direction of the thin film-forming substance is changed into a concave shape, the substrate 1 is arranged to be slightly orthogonal to the flying direction of the thin film-forming substance as is conventionally known. Comparing the conditions on the substrate surface can promote the uniformity of the quality (such as film thickness) of the thin film formed on the substrate surface. In addition, since the substrate 1 abuts on the abutting surface 1 1 A of the abutting portion 11 in a state where the direction in which the thin film-forming material is flying is changed into a concave shape, it can be compared with the conventional case where the concave shape is changed. Increasing the adhesion between the abutting surface 1 A of the substrate 1 and the abutting surface 1 a of the abutting portion 1 can improve the cooling efficiency of the substrate 1 through the cooling channel 1 1 C during the sputtering process or the like. In addition, in this embodiment, since the outer peripheral portion of the substrate 1 is held by the mechanical chuck 15, for example, even if the substrate 1 has no through hole in the central portion, it can be positioned and held well. The combination of the positioning and holding of 1 B and Π B can achieve more accurate positioning and holding of the substrate 1. In addition, if the outer peripheral portion of the substrate 1 is held by the mechanical chuck 15, the tb mesh is effective as follows. That is, when the mask 40 is a metal thin film or the like that is a reflective film on the processed surface 1 c of the substrate 1, it is used by covering the outer peripheral portion of the substrate 1 without forming the metal thin film. Related mask 4 〇-16- (12) (12) 200304138 If the substrate 4 is in contact with the processed surface 1c of the substrate 1, abnormal discharge may occur between the film and the mask 40 during film formation. This may cause adverse effects on the thin film (for example, occurrence of abnormal film thickness in the abnormal discharge portion or the vicinity thereof) ', which is not preferable. Therefore, a small gap U between the to-be-processed surface 1C of the substrate 1 and the mask 40 (refer to FIG. 3, FIG. 6, and FIG. 7) is maintained. However, conventionally, the positioning and holding are performed by using the through hole opened in the center of the substrate as a positioning reference, so that the holding in the outer peripheral portion of the substrate 1 is not performed. The center part, so the influence of machining accuracy or holding accuracy error, small vibration, etc. tends to increase in the outer peripheral part of the substrate 1), so that the mask 40 and the processed surface 1C of the substrate 1 in the outer peripheral part of the substrate 1 The risk of exposure is high. On the other hand, as described in this embodiment, since the outer peripheral portion of the substrate 1 can be held by the mechanical chuck 15, the outer peripheral portion of the substrate 1 is extremely well maintained, so it can be avoided as much as possible. The mask 4 in the outer peripheral portion may be in contact with the processed surface 1 C of the substrate 1. Therefore, the adverse effect on the film formation caused by abnormal discharge can be minimized, and the yield can be greatly improved, and the production can be greatly increased. Sex. In this embodiment, although the engaging portion 1 B is disposed in the central portion of the substrate 1 and the engaging portion n B is disposed in the docking portion 1 丨, the present invention is not limited to this. That is, for example, the engaging portions 1 β and Π B are omitted, and the processing surface is concave to form a concave surface through the mechanical central head 15 and the abutting surface 1 1 A. The substrate 1 is deformed to be positioned and held on the holding device 10. Composition is also possible. Of course, the various functions described above can be accomplished even in related situations. In addition, according to this, even a conventional substrate -17- (13) (13) 200304138 with a through-hole in the central portion or a substrate without a through-hole in the central portion can be operated without distinction between the two. It is possible to avoid the specialization of the equipment, and to maintain a high degree of freedom in designing the production system. Further, for example, a conventional through-hole substrate having a through-hole in the central portion may be used as the engaging portion 1 B of the substrate 1 without the through-hole in the central portion described in this embodiment. In a related case, the engaging portion 1 1 B of the abutting surface 1 1 A may be formed in a convex shape toward the substrate to be held, and it may of course be formed. Although an example of the treatment of the disc-shaped member in the above embodiment has been described with reference to the sputtering process, the present invention is not limited to this. As described above, in accordance with the present invention, if the processed surface of the disc-shaped member is formed into a predetermined concave shape to be deformed and retained, for example, when the aforementioned processed surface is subjected to a sputtering process (a thin film-forming substance is blown). In the case where the processed surface of the drawing board-like member has a concave shape and the sputtering process is performed in the coming direction), the formation of the substrate surface can be promoted in comparison with a case where the substrate surface is arranged slightly orthogonal to the flying direction of the film-forming substance as is conventionally known. Uniformity of film quality (such as film thickness, etc.) on the back of the disc-shaped member. In addition, compared with the conventional case where the shape of the concave surface is changed, it is possible to increase the contact between the treated surface of the disc-shaped member and the surface on the opposite side (that is, the back surface of the disc-shaped member) and the face on the opposite side. Because of the closeness of the abutting surface of the holding device, the cooling efficiency of the disc-shaped member through the abutting surface can be improved even during a sputtering process or the like. Furthermore, since the disk-shaped member is held by the engaging means or the peripheral holding means, for example, even a disk-shaped member having no through-hole in the center portion can be well-positioned and held. -18- (14) (14) 200304138 In addition, since the outer peripheral portion of the disc-shaped member can be held by the outer-circumferential holding means, the outer peripheral portion of the disc-shaped member can be well held. Therefore, the processed surface of the disc-shaped member is formed as a reflective film by sputtering. In the case of a metal thin film or the like, since the metal thin film or the like is not formed on the outer peripheral portion of the disc-shaped member, the surface to be processed and the mask disposed with a predetermined gap and the surface to be processed of the disc-shaped member can be reliably prevented. Therefore, the abnormal discharge caused by the contact can be prevented. Therefore, the adverse effect on the film formation can be avoided as much as possible, and the yield can be greatly improved, which can greatly improve the productivity. [Brief Description of the Drawings] Fig. 1 is a cross-sectional view showing an example of a transfer device-side transfer arm including a holding device for a disc-shaped member according to an embodiment of the present invention. FIG. 2 is a top view of a transfer arm on the sputtering apparatus side shown in FIG. 1. FIG. FIG. 3 is an enlarged view of a portion C in FIG. 1. FIG. 4 is a diagram for explaining a transfer operation (a state before transfer) of a disc-shaped member (substrate) between an atmospheric-side transfer arm and a sputtering device-side transfer arm. FIG. 5 is a diagram illustrating an atmospheric-side transfer arm and sputtering FIG. C of the transfer operation (state after transfer) of the disk-shaped member (substrate) performed between the transfer arms on the plating apparatus side FIG. 6 is an enlarged view of part a in FIG. 5. FIG. 7 is an enlarged view of part b in FIG. 5. -19- (15) (15) 200304138 Fig. 8 is an enlarged view of part c in Fig. 5 [Description of Symbols] 1: substrate 1 B, 1 1 B: engaging part 1 C: processed surface 1 〇: holding device 1 1: Butt joint 1 1 A: Butt surface 1 2: Sputtering device side transfer arm 1 2 A, 3 0: Magnet part 1 3: Atmospheric side transfer arm 1 3 A: Ejector pin 1 4: Suction shaft 1 5 : Mechanical chuck 15A: Dovetail groove I 6: Cam groove 1 7: Cam follower 1 8: Shaft 1 9: Sliding groove 20: Chuck switch cam ring 20A: Ejection hole 3 1: Magnet Holder 4 0: Mask-20-

Claims (1)

(1) (1)200304138 拾、申請專利範圍 1、 一種圓板狀構件保持裝置，其特徵爲： 包含使該圓板狀構件的被處理面成爲預定的凹面形狀 而使圓板狀構件變形來保持的保持手段而構成。 2、 如申請專利範圍第1項所述之圓板狀構件保持裝 置，其中該保持手段包含： 與該圓板狀構件的被處理面的相反側的面對接，形成 應使圓板狀構件的被處理面變形成預定的凹面形狀的凹面 形狀的對接面；以及 一邊使該對接面與圓板狀構件的被處理面的相反側的 面對接，使該被處理面變形成預定的凹面形狀，一邊經由 配設於該圓板狀構件的圓板狀構件側卡合部與配設於該對 接面的對接面側卡合部，卡合圓板狀構件與該對接面的卡 合手段，而構成。 3、 如申請專利範圍第1項或第2項所述之圓板狀構 件保持裝置，其中該保持手段包含： 與該圓板狀構件的被處理面的相反側的面對接，形成 應使圓板狀構件的被處理面變形成預定的凹面形狀的凹面 形狀的對接面；以及 一邊使該對接面與圓板狀構件的被處理面的相反側的 面對接，使該被處理面變形成預定的凹面形狀，一邊保持 該圓板狀構件的外周部的外周保持手段，而構成。(1) (1) 200304138 Patent application scope 1. A disc-shaped member holding device characterized by including deforming the disc-shaped member by changing the processed surface of the disc-shaped member into a predetermined concave shape. It is constituted by holding means. 2. The device for holding a disc-shaped member according to item 1 of the scope of the patent application, wherein the holding means includes: abutting on the opposite side of the treated surface of the disc-shaped member to form a disc-shaped member The processed surface is transformed into a concave surface butting surface having a predetermined concave shape; and the abutting surface is brought into contact with the opposite side of the processed surface of the disc-shaped member, so that the processed surface is formed into a predetermined concave surface. Shape, one side engages the engaging means of the disc-shaped member and the abutting surface via the disc-shaped member-side engaging portion disposed on the disc-shaped member and the abutting surface-side engaging portion disposed on the abutting surface. While posing. 3. The disk-shaped member holding device according to item 1 or 2 of the scope of patent application, wherein the holding means includes: abutting on the opposite side of the treated surface of the disk-shaped member, forming a The processed surface of the disk-shaped member is changed into a concave surface with a predetermined concave shape butting surface; and the abutting surface is brought into contact with the opposite side of the processed surface of the disk-shaped member, so that the processed surface is changed It is formed by forming a predetermined concave shape and holding the outer peripheral holding means of the outer peripheral portion of the disc-shaped member.
TW092104966A 2002-03-07 2003-03-07 Disk-like member holding device TWI256046B (en)

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JP6110664B2 (en) * 2013-01-07 2017-04-05 三菱重工業株式会社 Vacuum deposition apparatus with substrate holding tray for vapor deposition
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JP3443757B2 (en) * 1995-02-22 2003-09-08 石川島播磨重工業株式会社 Ion shower doping equipment
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