JPH09217173A - Substrate holder and method for mounting substrate - Google Patents
Substrate holder and method for mounting substrateInfo
- Publication number
- JPH09217173A JPH09217173A JP5247796A JP5247796A JPH09217173A JP H09217173 A JPH09217173 A JP H09217173A JP 5247796 A JP5247796 A JP 5247796A JP 5247796 A JP5247796 A JP 5247796A JP H09217173 A JPH09217173 A JP H09217173A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- supporting surface
- base
- substrate supporting
- holding device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 345
- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000005452 bending Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 abstract description 9
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 238000003825 pressing Methods 0.000 description 12
- 230000006866 deterioration Effects 0.000 description 7
- 238000010884 ion-beam technique Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000002826 coolant Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000013021 overheating Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】この発明は、四角形で薄板状
の基板に熱入力がある状態で当該基板に処理を施す、例
えばイオンドーピング、イオン注入等の処理、あるいは
スパッタリング、プラズマCVD、レーザー等による成
膜処理を施す際に、当該基板を保持する基板保持装置お
よびそれへの基板装着方法に関し、より具体的には、当
該基板に対する冷却性能を向上させる手段に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to processing a substrate having a rectangular and thin plate shape with a heat input, such as ion doping, ion implantation, sputtering, plasma CVD, laser, etc. The present invention relates to a substrate holding device that holds a substrate when performing a film forming process and a substrate mounting method for the substrate holding device, and more specifically to a means for improving cooling performance for the substrate.
【0002】[0002]
【従来の技術】この種の基板保持装置は、従来、基板を
支持するベースの基板支持面を平面または凸面にし、四
角い枠状の基板押さえによって、基板の周縁部をベース
の基板支持面に向けて押さえ付ける構造をしていた。2. Description of the Related Art Conventionally, a substrate holding device of this type has a flat or convex substrate supporting surface of a base for supporting a substrate, and a rectangular frame-shaped substrate holder directs a peripheral edge of the substrate toward the substrate supporting surface of the base. It had a structure to hold it down.
【0003】[0003]
【発明が解決しようとする課題】上記基板保持装置にお
いて基板を押さえ付ける力は、基板押さえによるものだ
けである。従って、ベースの基板支持面が平面の場合
は、基板押さえの近傍のみにおいて基板を押さえ付ける
力が加わるので、それ以外の部分では基板の基板支持面
に対する接触圧が低く、両者間の熱伝達は悪い。従っ
て、基板の十分な冷却ができない。In the above substrate holding device, the substrate pressing force is only due to the substrate pressing. Therefore, when the substrate supporting surface of the base is a flat surface, a force for pressing the substrate is applied only in the vicinity of the substrate pressing, and in other portions, the contact pressure on the substrate supporting surface of the substrate is low, and the heat transfer between the two does not occur. bad. Therefore, the substrate cannot be cooled sufficiently.
【0004】ベースの基板支持面が凸面の場合は、基板
のほぼ全体に押し付け力が加わるけれども、基板への熱
入力によって基板の温度が上昇すると、基板が膨張し
て、固定されていない中央部付近が盛り上がろうとして
押し付け力が減少するので、あるいは極端な場合は隙間
が生じるので、やはり基板と基板支持面間の熱伝達が悪
く、基板の十分な冷却ができない。この盛り上がりは、
基板支持面が平面の場合にも起こる。When the substrate supporting surface of the base is a convex surface, a pressing force is applied to almost the entire substrate, but when the temperature of the substrate rises due to heat input to the substrate, the substrate expands and the central portion not fixed. Since the pressing force is reduced to increase the vicinity and the gap is generated in an extreme case, the heat transfer between the substrate and the substrate supporting surface is also poor and the substrate cannot be cooled sufficiently. This excitement is
It also occurs when the substrate support surface is flat.
【0005】基板の冷却が不十分だと、処理時に基板の
温度上昇が過大になり、例えば、基板の変形、変質、あ
るいは基板上に設けられているレジスト膜や回路素子の
変質、劣化等を招く。If the cooling of the substrate is insufficient, the temperature of the substrate rises excessively during processing, and, for example, the substrate may be deformed or deteriorated, or the resist film or circuit elements provided on the substrate may be deteriorated or deteriorated. Invite.
【0006】そこでこの発明は、基板が熱膨張してもそ
れとベースとの間の熱伝達の悪化を防ぐことができ、基
板に対する冷却性能の高い基板保持装置およびそれへの
基板装着方法を提供することを主たる目的とする。Therefore, the present invention provides a substrate holding device having a high cooling performance for the substrate and a substrate mounting method for the substrate, which can prevent deterioration of heat transfer between the substrate and the base even if the substrate thermally expands. The main purpose is that.
【0007】[0007]
【課題を解決するための手段】上記目的を達成するた
め、この発明の基板保持装置は、四角形で薄板状の基板
を支持するものであってその基板支持面が筒状の凹面で
あるベースと、このベースの基板支持面上の基板の少な
くとも湾曲していない二辺を当該ベースに向けて押さえ
付ける基板押さえと、前記ベースの基板支持面上の基板
がその湾曲していない二辺に交差する外方向に伸びるの
を止める規制手段とを備えており、しかも前記ベースの
基板支持面の平均曲率を、前記基板の両端部付近を支持
したときの当該基板の自重による撓みの平均曲率以下に
していることを特徴とする。In order to achieve the above object, a substrate holding device of the present invention supports a quadrilateral thin plate-shaped substrate, and a substrate support surface of which is a cylindrical concave surface. A substrate retainer that presses at least two non-curved sides of the substrate on the substrate supporting surface of the base toward the base, and a substrate on the substrate supporting surface of the base intersects the two non-curving sides. And an average curvature of the substrate supporting surface of the base is set to be equal to or less than the average curvature of bending due to the own weight of the substrate when supporting both ends of the substrate. It is characterized by being
【0008】この発明の基板装着方法は、基板保持装置
に前記基板を装着する際に、当該基板の両端部付近を支
持しておいて、自重によって撓んだ当該基板の中央部付
近をまず前記ベースの基板支持面に当接させ、次いで当
該基板の支持を解除して基板の残りの面を前記ベースの
基板支持面に当接させることを特徴とする。According to the substrate mounting method of the present invention, when mounting the substrate on the substrate holding device, while supporting the vicinity of both ends of the substrate, the central portion of the substrate which is bent by its own weight is first said. It is characterized in that it is brought into contact with the substrate supporting surface of the base, and then the support of the substrate is released to bring the remaining surface of the substrate into contact with the substrate supporting surface of the base.
【0009】上記基板保持装置においては、基板をベー
スの基板支持面に装着すると、基板は当該基板支持面に
沿って接触面が広がるので、基板を下に凸状に曲げた状
態で、基板の全面を基板支持面に密着性良く密着させる
ことができる。しかも、基板を保持した状態で当該基板
に熱入力があると、基板は膨張しようとするけれども、
基板の湾曲していない二辺は基板押さえによって押さえ
られており、しかも基板の湾曲していない二辺に交差す
る外方向への伸びは規制手段によって止められるので、
基板が膨張しようとすればする程、基板はベースの基板
支持面に向けて膨らもうとしてその全面が基板支持面に
より強く押し付けられるようになり、基板と基板支持面
間の接触圧が増大し、両者間の熱伝達は一層良くなる。
従って、この基板保持装置は、基板に対する冷却性能が
高く、基板の温度上昇を効果的に抑制することができる
と共に、基板の温度分布を均一化することができる。In the above substrate holding device, when the substrate is mounted on the substrate supporting surface of the base, the contact surface of the substrate spreads along the substrate supporting surface, so that the substrate is bent downward in a convex shape. The entire surface can be brought into close contact with the substrate supporting surface with good adhesiveness. Moreover, if there is heat input to the substrate while it is held, the substrate will try to expand,
Since the two non-curved sides of the substrate are pressed by the substrate retainer, and the outward expansion that intersects the two non-curved sides of the substrate is stopped by the restricting means,
The more the substrate expands, the more the substrate tries to expand toward the substrate supporting surface of the base, and the entire surface thereof is pressed against the substrate supporting surface more strongly, and the contact pressure between the substrate and the substrate supporting surface increases. , The heat transfer between them will be better.
Therefore, this substrate holding device has a high cooling performance for the substrate, can effectively suppress the temperature rise of the substrate, and can make the temperature distribution of the substrate uniform.
【0010】上記基板装着方法によれば、ベースの基板
支持面上で基板は、その中央部付近を支点にしてその外
側の接触面が基板支持面に沿うように広がるので、基板
を基板支持面上に載置しただけで、基板の全面を基板支
持面にうまく密着させることができる。しかも基板の接
触面が広がるときに、基板の中央部付近から外側にかけ
て順次広がってベースの基板支持面に沿うので、基板は
基板支持面に擦れることなく密着する。従って、パーテ
ィクルの発生や基板の損傷を防止することができる。According to the above substrate mounting method, the substrate spreads on the substrate supporting surface of the base such that the contact surface on the outside of the substrate extends along the substrate supporting surface with the vicinity of the central portion as a fulcrum. The entire surface of the substrate can be brought into good contact with the substrate supporting surface simply by placing it on top. Moreover, when the contact surface of the substrate spreads, it gradually spreads from the vicinity of the central portion of the substrate to the outside and follows the substrate supporting surface of the base, so that the substrate adheres to the substrate supporting surface without rubbing. Therefore, generation of particles and damage to the substrate can be prevented.
【0011】[0011]
【発明の実施の形態】図1は、この発明に係る基板保持
装置の一例を示す平面図である。図2は、図1の線A−
Aに沿う断面図である。FIG. 1 is a plan view showing an example of a substrate holding device according to the present invention. FIG. 2 is a sectional view taken along line A- of FIG.
It is sectional drawing which follows A.
【0012】この基板保持装置は、四角形で薄板状の基
板2を支持するベース10と、この基板2の二辺5、6
をベース10に向けて押さえ付ける基板押さえ20とを
備えている。This substrate holding device includes a base 10 for supporting a rectangular and thin substrate 2, and two sides 5, 6 of the substrate 2.
And a substrate retainer 20 for pressing the substrate toward the base 10.
【0013】基板2は、四角形であるが、正方形である
か長方形であるか等は問わない。この基板2の一例とし
て、液晶用のガラス基板がある。その寸法は、例えば、
縦×横が300mm×300mmから1000mm×1
000mm程度、厚さが1.5mmから0.5mm程度
である。このような基板2は、その両端部付近を支持す
ると、自重で、円弧状または放物線状等のように、下に
凸に丸く撓む。その撓み量は、基板2の大きさ、厚さお
よび支持の方法等によって異なるが、例えば0.5mm
〜数十mm程度になる。The substrate 2 is quadrangular, but it does not matter whether it is square or rectangular. As an example of the substrate 2, there is a glass substrate for liquid crystal. Its dimensions are, for example,
Vertical x horizontal is 300mm x 300mm to 1000mm x 1
The thickness is about 000 mm, and the thickness is about 1.5 mm to 0.5 mm. When such a substrate 2 is supported in the vicinity of both ends thereof, the substrate 2 is bent by its own weight into a downward convex round shape such as an arc shape or a parabola shape. The amount of flexure varies depending on the size, thickness and supporting method of the substrate 2, but is 0.5 mm, for example.
It is about several tens of mm.
【0014】ベース10の、基板2と接触して基板2を
支持する基板支持面12は、図3にも示すように、筒状
の凹面である。この凹面の断面形状は、完全な円である
必要はなく、円以外に楕円、放物線状等が採り得る。即
ち、当該凹面は、円筒状凹面でも良いし、楕円筒状凹面
等でも良い。The substrate supporting surface 12 of the base 10 that contacts the substrate 2 and supports the substrate 2 is a cylindrical concave surface as shown in FIG. The cross-sectional shape of the concave surface need not be a perfect circle, but may be an ellipse, a parabola, or the like in addition to a circle. That is, the concave surface may be a cylindrical concave surface or an elliptical cylindrical concave surface.
【0015】ベース10には、この実施例では、冷媒通
路16を設けて、そこに冷媒(例えば水、代替フロン
等)を流すようにしている。それによって、ベース10
およびそこに保持した基板2をより強力に冷却すること
ができる。また、冷媒の温度制御によって、基板2の温
度制御も可能である。もっとも、他の手段によって、例
えばベース10を他の構造物に取り付ける等して、それ
への熱伝導によってベース10から熱を放熱させること
も可能であり、その場合は冷媒通路16を必ずしも設け
なくても良い。但し、イオンビーム40等の入射による
温度上昇によってベース10が基板2と同じように伸び
ると、基板2の伸びる力を、当該基板2をベース10の
基板支持面12に押し付ける力として利用する(この作
用は後で詳しく述べる)ことができないので、ベース1
0を少なくともその伸びが基板2の伸びよりも小さくな
る程度に冷却するのが好ましい。In this embodiment, the base 10 is provided with a coolant passage 16 through which a coolant (for example, water, alternative CFCs, etc.) flows. Thereby, the base 10
And the substrate 2 held there can be cooled more strongly. Further, the temperature of the substrate 2 can be controlled by controlling the temperature of the coolant. However, it is also possible to dissipate heat from the base 10 by other means, such as attaching the base 10 to another structure, and conducting heat to it, in which case the refrigerant passage 16 is not necessarily provided. May be. However, when the base 10 expands in the same manner as the substrate 2 due to the temperature rise due to the incidence of the ion beam 40 or the like, the expanding force of the substrate 2 is used as the force for pressing the substrate 2 against the substrate supporting surface 12 of the base 10 (this The action cannot be described in detail later), so base 1
It is preferable to cool 0 to such an extent that its elongation becomes smaller than that of the substrate 2.
【0016】上記のようなベース10の基板支持面12
に基板2を装着(載置)すると、基板2は上記のように
薄板であるから、基板2はその自重で基板支持面12に
沿って湾曲する。その場合、基板支持面12は筒状の凹
面であるから、基板2には、湾曲した二辺(即ち基板支
持面12の凹状辺部に沿った二辺)3、4と、湾曲して
いない二辺(即ち基板支持面12の直線状辺部に沿った
二辺)5、6とができる。The substrate supporting surface 12 of the base 10 as described above.
When the substrate 2 is mounted (mounted) on the substrate 2, since the substrate 2 is a thin plate as described above, the substrate 2 bends along the substrate supporting surface 12 due to its own weight. In that case, since the substrate support surface 12 is a cylindrical concave surface, the substrate 2 has two curved sides (that is, two sides along the concave side portion of the substrate support surface 12) and is not curved. Two sides (that is, two sides along the linear side portion of the substrate supporting surface 12) 5 and 6 are formed.
【0017】上記基板押さえ20は、この実施例では、
この基板2の湾曲していない二辺5、6をベース10の
基板支持面12に向けて押さえ付ける。この基板2の湾
曲していない二辺というのは、図1に示した実施例では
基板2の長辺であるが、長辺であるか短辺であるかは問
わない。この基板押さえ20に押さえ付け力を加える手
段は、この実施例では複数本のボルト22であるが、そ
れに限られるものではない。例えば、ばね、ヒンジ等を
用いても良い。また、左右二つの基板押さえ20をつな
いで、基板押さえ20を四角い枠状のものにしても良
い。The substrate retainer 20 is
The two non-curved sides 5 and 6 of the substrate 2 are pressed against the substrate supporting surface 12 of the base 10. The two non-curved sides of the substrate 2 are the long sides of the substrate 2 in the embodiment shown in FIG. 1, but it does not matter whether they are the long sides or the short sides. The means for applying the pressing force to the substrate holder 20 is the plurality of bolts 22 in this embodiment, but the means is not limited to this. For example, a spring, a hinge or the like may be used. Alternatively, the left and right substrate holders 20 may be connected to each other so that the substrate holder 20 has a rectangular frame shape.
【0018】基板支持面12上の基板2がその湾曲して
いない二辺5、6に交差する外方向に(即ち図1中のX
方向に)伸びるのを止める規制手段として、この実施例
では、図4にも拡大して示すように、基板押さえ20の
内側下面に、即ち基板2を押さえる面に、基板2の上記
二辺5、6の端面と当接する段部24をそれぞれ設けて
いる。但し、図5に示す例のように、ベース10の基板
支持面12の端部に、基板2の二辺5、6の端面と当接
する段部18を設けても良い。また、上記基板押さえ2
0またはベース10に、基板2の二辺5、6の端面と当
接するピンを立設する等しても良い。The substrate 2 on the substrate support surface 12 is outwardly (ie, X in FIG. 1) intersecting the two non-curved sides 5, 6.
In this embodiment, as shown in an enlarged view in FIG. 4, the above-mentioned two sides 5 of the substrate 2 are provided on the inner lower surface of the substrate retainer 20, that is, on the surface that retains the substrate 2, as a restricting means for stopping the extension. , 6 are provided with stepped portions 24 that come into contact with the end surfaces of the respective. However, as in the example shown in FIG. 5, a step portion 18 that comes into contact with the end surfaces of the two sides 5 and 6 of the substrate 2 may be provided at the end portion of the substrate supporting surface 12 of the base 10. In addition, the substrate holder 2
Alternatively, pins that come into contact with the end faces of the two sides 5 and 6 of the substrate 2 may be erected on the base plate 0 or the base 10.
【0019】更に、図6に示すように、ベース10の基
板支持面12の平均曲率K1 を、同基板2をその両端部
付近で支持したときの当該基板2の自重による撓みの平
均曲率K2 以下に、即ちK1 ≦K2 にしている。換言す
れば、基板支持面12の曲がり方を、基板2の自重によ
る撓みの曲がり方以下に小さくしている。このことを更
に換言すれば、基板支持面12および基板2の曲がり方
が円と仮定した場合、基板支持面12の曲率半径R
1 (=1/K1 )を、基板2の自重による撓みの曲率半
径R2 (=1/K2 )以上に、即ちR1 ≧R2 にしてい
る。基板支持面12の平均曲率K1 を基板2の自重によ
る撓みの平均曲率K2 に比べてどの程度小さくすれば良
いかは、基板2の寸法や材質等によって変わるので一概
には言えないが、概略的に言えば、基板支持面12が凹
面になりかつ基板2の平均曲率K2 より若干小さい程度
で良い。Further, as shown in FIG. 6, the average curvature K 1 of the substrate supporting surface 12 of the base 10 is the average curvature K of the flexure of the substrate 2 due to its own weight when the substrate 2 is supported near both ends thereof. It is set to 2 or less, that is, K 1 ≦ K 2 . In other words, the bending of the substrate supporting surface 12 is made smaller than the bending of the substrate 2 due to its own weight. In other words, if it is assumed that the substrate supporting surface 12 and the substrate 2 are curved, the radius of curvature R of the substrate supporting surface 12 is R.
1 (= 1 / K 1 ) is set to a radius of curvature R 2 (= 1 / K 2 ) of bending due to the weight of the substrate 2, that is, R 1 ≧ R 2 . The extent to which the average curvature K 1 of the substrate supporting surface 12 is made smaller than the average curvature K 2 of the deflection of the substrate 2 due to its own weight is uncertain because it depends on the size and material of the substrate 2, etc. Generally speaking, the substrate support surface 12 is concave and may be slightly smaller than the average curvature K 2 of the substrate 2.
【0020】更にこの実施例では、ベース10の基板支
持面12を研磨する等して、当該基板支持面12の平滑
度を、基板2の当該基板支持面12側の平滑度以上に良
くしている。Further, in this embodiment, the substrate supporting surface 12 of the base 10 is polished so that the smoothness of the substrate supporting surface 12 is better than the smoothness of the substrate 2 on the substrate supporting surface 12 side. There is.
【0021】ベース10の、上記X方向に直交するY方
向の両端部には、即ち基板2の湾曲した二辺3、4の外
側の部分には、この実施例では、図3を参照すればより
明らかなように、凹面になっていない平坦部13、14
をそれぞれ設けている。これを設けておくと、この平坦
部13、14によって、基板装着時に基板2の位置決め
を行うことができるので、基板2の装着が容易になる。
但し、この平坦部13、14は必須のものではない。こ
の平坦部13、14を設ける場合は、それとそれに対向
する基板2の辺3、4との間に、基板2の温度上昇によ
るその方向(Y方向)への伸びを吸収することができる
程度の隙間30を設けておくものとする。そのようにす
れば、基板2に歪みが生じない。At both ends of the base 10 in the Y direction orthogonal to the X direction, that is, at the outer sides of the curved two sides 3 and 4 of the substrate 2, in this embodiment, referring to FIG. As is clearer, the flat portions 13 and 14 which are not concave
Are provided respectively. If this is provided, the flat portions 13 and 14 can position the substrate 2 when the substrate is mounted, so that the substrate 2 can be easily mounted.
However, the flat portions 13 and 14 are not essential. When the flat portions 13 and 14 are provided, the extension in that direction (Y direction) due to the temperature rise of the substrate 2 can be absorbed between the flat portions 13 and 14 and the sides 3 and 4 of the substrate 2 facing the flat portions. A gap 30 is provided. By doing so, the substrate 2 is not distorted.
【0022】上記基板保持装置に基板2を装着する際
は、次のようにするのが好ましい。即ち、図6を参照し
て、基板支持面12上において基板2の両端部付近を何
かで、例えば支持部材32で支持しておいて、自重によ
って撓んだ基板2の中央部a付近をまず基板支持面12
に当接させる。次いでその状態で、基板2の支持を解除
して(即ち支持部材32を取り除いて)、基板2の残り
の面を基板支持面12に当接させる。その後、前述した
基板押さえ20によって基板2を押さえ付ける。When mounting the substrate 2 on the substrate holding device, the following is preferable. That is, referring to FIG. 6, the vicinity of both ends of the substrate 2 on the substrate support surface 12 is supported by something, for example, the support member 32, and the vicinity of the central portion a of the substrate 2 which is bent by its own weight. First, the substrate support surface 12
Contact. Then, in that state, the support of the substrate 2 is released (that is, the support member 32 is removed), and the remaining surface of the substrate 2 is brought into contact with the substrate support surface 12. After that, the substrate 2 is pressed by the above-mentioned substrate holder 20.
【0023】上記支持部材32は、具体的には、基板2
を搬送する搬送ロボットのアームの先端部、あるいは、
ベース10に設けられた昇降式のピン等である。The support member 32 is specifically the substrate 2
The tip of the arm of the transfer robot that transfers
An elevating pin or the like provided on the base 10.
【0024】この方法によれば、ベース10の基板支持
面12上で基板2は、その中央部a付近を支点にしてそ
の外側の接触面が、図6中に矢印Dで示すように、基板
支持面12に沿うように広がるので、基板2を基板支持
面12上に載置しただけで、基板2の全面を基板支持面
12にうまく密着させることができる。しかも基板2の
接触面が広がるときに、基板2の中央部a付近から外側
にかけて、b部、c部というように順次広がって基板支
持面12に沿うので、基板2は基板支持面12に擦れる
ことなく密着する。従って、パーティクル(ゴミ)の発
生や基板2の損傷を防止することができる。パーティク
ルが発生すると、それが基板2の表面に付着して基板表
面を汚染し、歩留り低下を惹き起こす恐れが生じるけれ
ども、これを防止することができる。According to this method, the substrate 2 on the substrate supporting surface 12 of the base 10 has a contact surface on the outside with the central portion a near the fulcrum as a fulcrum, as shown by an arrow D in FIG. Since it spreads along the supporting surface 12, the entire surface of the substrate 2 can be brought into close contact with the substrate supporting surface 12 simply by placing the substrate 2 on the supporting surface 12. Moreover, when the contact surface of the substrate 2 spreads, the substrate 2 rubs against the substrate support surface 12 because it gradually spreads from the vicinity of the central portion a of the substrate 2 to the outside, such as the portion b and the portion c, along the substrate support surface 12. Adheres without contact. Therefore, generation of particles (dust) and damage to the substrate 2 can be prevented. If particles are generated, they may adhere to the surface of the substrate 2 and contaminate the substrate surface, which may cause a decrease in yield, but this can be prevented.
【0025】上記基板保持装置によれば、ベース10の
基板支持面12が筒状の凹面であるので、そこに薄板状
の基板2を装着することによって、基板2を基板支持面
12に沿って下に凸状に曲げた状態で保持することがで
きる。しかも、基板支持面12の平均曲率が基板2の自
重による撓みの平均曲率以下であるので、基板2はその
中央部付近から外に基板支持面12に沿うようにその接
触面が広がり、従って基板2の全面を基板支持面12に
うまく密着させることができる。According to the above substrate holding device, since the substrate supporting surface 12 of the base 10 is a cylindrical concave surface, by mounting the thin substrate 2 on the substrate supporting surface 12, the substrate 2 is moved along the substrate supporting surface 12. It can be held in a state of being bent downwardly. Moreover, since the average curvature of the substrate supporting surface 12 is equal to or smaller than the average curvature of the deflection of the substrate 2 due to its own weight, the contact surface of the substrate 2 spreads from the vicinity of the central portion thereof to the outside along the substrate supporting surface 12, and thus the substrate. The entire surface of 2 can be brought into close contact with the substrate support surface 12.
【0026】更に、この基板保持装置は、基板2が熱入
力によって伸びる力を、当該基板2をベース10の基板
支持面12に押し付ける力として利用することができ
る。即ち、上記のように基板2を保持した状態で当該基
板2にイオンビーム40の照射等によって熱入力がある
と、基板2は膨張しようとするけれども、基板2の湾曲
していない二辺5、6は、基板押さえ20によって押さ
えられており、しかも基板2の湾曲していない二辺5、
6に交差する外方向(即ち図1中のX方向)への伸びは
基板押さえ20の段部24によって止められるので、基
板2が膨張しようとすればする程、基板2はベース10
の基板支持面12に向けて膨らもうとしてその全面が基
板支持面12により強く押し付けられるようになり、基
板2と基板支持面12間の接触圧が増大し、両者間の熱
伝達は一層良くなる。Further, in this substrate holding device, the force by which the substrate 2 is expanded by heat input can be utilized as the force for pressing the substrate 2 against the substrate supporting surface 12 of the base 10. That is, when heat is applied to the substrate 2 by irradiation of the ion beam 40 or the like with the substrate 2 held as described above, the substrate 2 tries to expand, but the two non-curved sides 5 of the substrate 2, 6 are two sides 5 of the substrate 2 which are held by the substrate holder 20 and which are not curved,
The outward expansion (that is, the X direction in FIG. 1) intersecting 6 is stopped by the step portion 24 of the substrate retainer 20, so that the more the substrate 2 tries to expand, the more the substrate 2 is moved to the base 10.
The entire surface of the substrate supporting surface 12 is urged to swell toward the substrate supporting surface 12 and is strongly pressed against the substrate supporting surface 12, the contact pressure between the substrate 2 and the substrate supporting surface 12 increases, and the heat transfer between the two is better. Become.
【0027】従ってこの基板保持装置は、基板2に対す
る冷却性能が高く、基板2の温度上昇を効果的に抑制す
ることができる。Therefore, this substrate holding device has a high cooling performance for the substrate 2 and can effectively suppress the temperature rise of the substrate 2.
【0028】しかも、基板2が膨張しようとする際に当
該基板2を基板支持面12に押し付ける力は、基板2の
面内においてほぼ均一に生じるので、基板2をその全面
においてほぼ均一な力で押し付けることができる。その
結果、基板2の面内においてほぼ均一な冷却性能が得ら
れるので、基板2の面内における温度分布を均一化する
ことができる。Moreover, since the force pressing the substrate 2 against the substrate support surface 12 when the substrate 2 is about to expand is almost uniformly generated within the surface of the substrate 2, the substrate 2 is evenly distributed over its entire surface. It can be pressed. As a result, a substantially uniform cooling performance can be obtained in the plane of the substrate 2, so that the temperature distribution in the plane of the substrate 2 can be made uniform.
【0029】その結果、基板2の過熱によって惹き起こ
される、基板2の変形、変質、あるいは基板2上に設け
られているレジスト膜や回路素子の変質、劣化等を防止
することができる。また、基板処理に用いるイオンビー
ムのビーム電流を小さくしたり、プラズマ密度を下げた
りする必要がないので、基板の処理能力が向上する。As a result, it is possible to prevent the deformation and deterioration of the substrate 2, or the deterioration and deterioration of the resist film and the circuit element provided on the substrate 2, which are caused by the overheating of the substrate 2. Further, since it is not necessary to reduce the beam current of the ion beam used for processing the substrate or lower the plasma density, the processing capacity of the substrate is improved.
【0030】また、この実施例のように、ベース10の
基板支持面12の平滑度を基板2の当該基板支持面12
側の平滑度以上に良くしておくと、基板2が上記のよう
にして基板支持面12に押し付けられたときの両者間の
接触面積が、ミクロ的に見ても非常に大きくなるので、
両者間の熱伝達が一層良くなり、基板2の温度上昇を一
層効果的に抑制することができる。Further, as in this embodiment, the smoothness of the substrate supporting surface 12 of the base 10 is determined by the smoothness of the substrate supporting surface 12 of the substrate 2.
If the surface smoothness is set to be equal to or higher than the side smoothness, the contact area between the two when the substrate 2 is pressed against the substrate supporting surface 12 as described above becomes very large from a microscopic point of view.
The heat transfer between the two becomes better, and the temperature rise of the substrate 2 can be suppressed more effectively.
【0031】なお、基板2の湾曲した二辺3、4は、そ
の下の基板支持面12の凹面に対応した(整合した)凸
状をしている基板押さえによって押さえても良いけれど
も、その場合は、基板2の両辺3、4の外方向(即ち図
1中のY方向)の伸びを規制しないようにするのが好ま
しい。そのようにすれば、基板2の伸びが自由になるの
で、温度上昇時に基板2に歪みが発生するのを防止する
ことができる。It should be noted that the curved two sides 3 and 4 of the substrate 2 may be pressed by a substrate pressing member having a convex shape (aligned) corresponding to the concave surface of the substrate supporting surface 12 thereunder, but in that case It is preferable not to regulate the outward extension of both sides 3 and 4 of the substrate 2 (that is, the Y direction in FIG. 1). By doing so, the extension of the substrate 2 becomes free, so that it is possible to prevent the substrate 2 from being distorted when the temperature rises.
【0032】[0032]
【発明の効果】この発明は、上記のとおり構成されてい
るので、次のような効果を奏する。Since the present invention is configured as described above, it has the following effects.
【0033】請求項1記載の基板保持装置によれば、基
板をベースの基板支持面に沿って下に凸状に曲げた状態
で、基板の全面を基板支持面にうまく密着させることが
できる。しかも基板が膨張しようとすればする程、その
力によって、基板は基板支持面により強く押し付けられ
るので、基板と基板支持面間の接触圧が増大し、両者間
の熱伝達は一層良くなる。従ってこの基板保持装置は、
基板に対する冷却性能が高く、基板の温度上昇を効果的
に抑制することができる。しかも、基板をその全面にお
いて基板支持面にほぼ均一な力で押し付けることがで
き、基板の面内においてほぼ均一な冷却性能が得られる
ので、基板の面内における温度分布を均一化することが
できる。According to the substrate holding apparatus of the first aspect, the entire surface of the substrate can be well brought into close contact with the substrate supporting surface in a state where the substrate is bent downward along the substrate supporting surface of the base. Moreover, the more the substrate expands, the more the substrate is pressed against the substrate supporting surface by the force, so that the contact pressure between the substrate and the substrate supporting surface increases, and the heat transfer between them becomes better. Therefore, this substrate holding device
The cooling performance for the substrate is high, and the temperature rise of the substrate can be effectively suppressed. Moreover, since the substrate can be pressed against the substrate supporting surface over its entire surface with a substantially uniform force, and substantially uniform cooling performance can be obtained within the surface of the substrate, the temperature distribution within the surface of the substrate can be made uniform. .
【0034】その結果、基板の過熱によって惹き起こさ
れる、基板の変形、変質、あるいは基板上に設けられて
いるレジスト膜や回路素子の変質、劣化等を防止するこ
とができる。また、基板処理に用いるイオンビームのビ
ーム電流を小さくしたり、プラズマ密度を下げたりする
必要がないので、基板の処理能力が向上する。As a result, it is possible to prevent the deformation and deterioration of the substrate, the deterioration and deterioration of the resist film and the circuit element provided on the substrate, which are caused by the overheating of the substrate. Further, since it is not necessary to reduce the beam current of the ion beam used for processing the substrate or lower the plasma density, the processing capacity of the substrate is improved.
【0035】請求項2記載の基板保持装置によれば、ベ
ースの基板支持面の平滑度を基板の当該基板支持面側の
平滑度以上に良くしておくことによって、基板が基板支
持面に押し付けられたときの両者間の接触面積が、ミク
ロ的に見ても非常に大きくなるので、両者間の熱伝達が
一層良くなり、基板の温度上昇を一層効果的に抑制する
ことができる。According to the substrate holding apparatus of the second aspect, the substrate is pressed against the substrate supporting surface by making the smoothness of the substrate supporting surface of the base equal to or higher than the smoothness of the substrate on the substrate supporting surface side. Since the contact area between the two is very large when viewed microscopically, the heat transfer between the two is further improved, and the temperature rise of the substrate can be suppressed more effectively.
【0036】請求項3記載の基板装着方法によれば、ベ
ースの基板支持面上で基板は、その中央部付近を支点に
してその外側の接触面が基板支持面に沿うように広がる
ので、基板を基板支持面上に載置しただけで、基板の全
面を基板支持面にうまく密着させることができる。しか
も基板の接触面が広がるときに、基板の中央部付近から
外側にかけて順次広がって基板支持面に沿うので、基板
は基板支持面に擦れることなく密着する。従って、パー
ティクルの発生や基板の損傷を防止することができ、ひ
いてはパーティクルによる基板表面の汚染および歩留り
低下を防止することができる。According to the substrate mounting method of the third aspect, since the substrate on the substrate supporting surface of the base spreads along the substrate supporting surface, the contact surface on the outside of the substrate spreads around the central portion as a fulcrum. It is possible to bring the entire surface of the substrate into good contact with the substrate supporting surface simply by mounting the substrate on the substrate supporting surface. Moreover, when the contact surface of the substrate expands, it gradually expands from the vicinity of the central portion of the substrate to the outside and follows the substrate supporting surface, so that the substrate adheres to the substrate supporting surface without rubbing. Therefore, it is possible to prevent generation of particles and damage to the substrate, and consequently to prevent contamination of the substrate surface and reduction in yield due to particles.
【図1】この発明に係る基板保持装置の一例を示す平面
図である。FIG. 1 is a plan view showing an example of a substrate holding device according to the present invention.
【図2】図1の線A−Aに沿う断面図である。2 is a cross-sectional view taken along the line AA of FIG.
【図3】図1中のベースの概略斜視図である。3 is a schematic perspective view of a base in FIG.
【図4】図1中のB部の一例を拡大して示す断面図であ
る。FIG. 4 is an enlarged cross-sectional view showing an example of a B part in FIG.
【図5】図1中のB部の他の例を拡大して示す断面図で
ある。FIG. 5 is an enlarged cross-sectional view showing another example of a B portion in FIG.
【図6】この発明に係る基板装着方法の一例を示す断面
図である。FIG. 6 is a sectional view showing an example of a substrate mounting method according to the present invention.
2 基板 5、6 湾曲していない辺 10 ベース 12 基板支持面 18 段部(規制手段) 20 基板押さえ 24 段部(規制手段) 40 イオンビーム 2 substrate 5, 6 non-curved side 10 base 12 substrate support surface 18 step (regulating means) 20 substrate retainer 24 step (regulating means) 40 ion beam
Claims (3)
あってその基板支持面が筒状の凹面であるベースと、こ
のベースの基板支持面上の基板の少なくとも湾曲してい
ない二辺を当該ベースに向けて押さえ付ける基板押さえ
と、前記ベースの基板支持面上の基板がその湾曲してい
ない二辺に交差する外方向に伸びるのを止める規制手段
とを備えており、しかも前記ベースの基板支持面の平均
曲率を、前記基板の両端部付近を支持したときの当該基
板の自重による撓みの平均曲率以下にしていることを特
徴とする基板保持装置。1. A base for supporting a quadrangular thin plate-shaped substrate, the substrate supporting surface of which is a cylindrical concave surface, and at least two non-curved sides of the substrate on the substrate supporting surface of the base. And a restricting means for stopping the substrate on the substrate supporting surface of the base from extending outward in a direction intersecting the two non-curved sides of the substrate. A substrate holding device, wherein an average curvature of the substrate supporting surface is set to be equal to or less than an average curvature of bending of the substrate due to its own weight when supporting the vicinity of both ends of the substrate.
記基板の当該基板支持面側の平滑度以上に良くしている
請求項1記載の基板保持装置。2. The substrate holding device according to claim 1, wherein the smoothness of the substrate supporting surface of the base is made higher than the smoothness of the substrate on the substrate supporting surface side.
前記基板を装着する際に、当該基板の両端部付近を支持
しておいて、自重によって撓んだ当該基板の中央部付近
をまず前記ベースの基板支持面に当接させ、次いで当該
基板の支持を解除して基板の残りの面を前記ベースの基
板支持面に当接させることを特徴とする基板保持装置へ
の基板装着方法。3. When mounting the substrate on the substrate holding device according to claim 1, the vicinity of both ends of the substrate is supported, and the vicinity of the central portion of the substrate bent by its own weight is first supported. A method of mounting a substrate on a substrate holding device, comprising: bringing the substrate supporting surface of the base into contact, then releasing the support of the substrate and bringing the remaining surface of the substrate into contact with the substrate supporting surface of the base.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5247796A JPH09217173A (en) | 1996-02-14 | 1996-02-14 | Substrate holder and method for mounting substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5247796A JPH09217173A (en) | 1996-02-14 | 1996-02-14 | Substrate holder and method for mounting substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH09217173A true JPH09217173A (en) | 1997-08-19 |
Family
ID=12915812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5247796A Pending JPH09217173A (en) | 1996-02-14 | 1996-02-14 | Substrate holder and method for mounting substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH09217173A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2357898A (en) * | 1999-10-26 | 2001-07-04 | Matsushita Electric Ind Co Ltd | Plasma process apparatus and method for process for a substrate |
JP2003068668A (en) * | 2001-06-15 | 2003-03-07 | Semiconductor Energy Lab Co Ltd | Laser irradiation stage, device and method for laser irradiation and production method for semiconductor device |
WO2003074756A1 (en) * | 2002-03-07 | 2003-09-12 | Tdk Corporation | Disk-like member holding device |
JP2004134725A (en) * | 2002-08-09 | 2004-04-30 | Fuji Electric Device Technology Co Ltd | Semiconductor wafer holding fixture and manufacturing method for semiconductor element |
DE102005045718A1 (en) * | 2005-09-24 | 2007-04-05 | Applied Materials Gmbh & Co. Kg | Carrier for a substrate |
DE102005045717B3 (en) * | 2005-09-24 | 2007-05-03 | Applied Materials Gmbh & Co. Kg | Carrier for a substrate |
KR100790409B1 (en) * | 2007-04-26 | 2008-01-03 | (주)비피에스 | Apparatus and method for forming coating layer on subject with curved surface |
US7655881B2 (en) | 2001-06-15 | 2010-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation stage, laser irradiation optical system, laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device |
WO2013183374A1 (en) * | 2012-06-08 | 2013-12-12 | シャープ株式会社 | Vapor deposition device |
JP2016020242A (en) * | 2015-11-06 | 2016-02-04 | 大日本印刷株式会社 | Substrate holding frame body and package of substrate |
-
1996
- 1996-02-14 JP JP5247796A patent/JPH09217173A/en active Pending
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2357898B (en) * | 1999-10-26 | 2003-11-12 | Matsushita Electric Ind Co Ltd | Plasma process apparatus and plasma process method for substrate |
GB2357898A (en) * | 1999-10-26 | 2001-07-04 | Matsushita Electric Ind Co Ltd | Plasma process apparatus and method for process for a substrate |
JP2003068668A (en) * | 2001-06-15 | 2003-03-07 | Semiconductor Energy Lab Co Ltd | Laser irradiation stage, device and method for laser irradiation and production method for semiconductor device |
US7655881B2 (en) | 2001-06-15 | 2010-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation stage, laser irradiation optical system, laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device |
CN1327029C (en) * | 2002-03-07 | 2007-07-18 | Tdk株式会社 | Disk-like member holding device |
WO2003074756A1 (en) * | 2002-03-07 | 2003-09-12 | Tdk Corporation | Disk-like member holding device |
JP2004134725A (en) * | 2002-08-09 | 2004-04-30 | Fuji Electric Device Technology Co Ltd | Semiconductor wafer holding fixture and manufacturing method for semiconductor element |
DE102005045717B3 (en) * | 2005-09-24 | 2007-05-03 | Applied Materials Gmbh & Co. Kg | Carrier for a substrate |
DE102005045718B4 (en) * | 2005-09-24 | 2009-06-25 | Applied Materials Gmbh & Co. Kg | Carrier for a substrate |
DE102005045718A1 (en) * | 2005-09-24 | 2007-04-05 | Applied Materials Gmbh & Co. Kg | Carrier for a substrate |
US8083912B2 (en) | 2005-09-24 | 2011-12-27 | Applied Materials Gmbh & Co. Kg. | Substrate carrier |
KR100790409B1 (en) * | 2007-04-26 | 2008-01-03 | (주)비피에스 | Apparatus and method for forming coating layer on subject with curved surface |
WO2013183374A1 (en) * | 2012-06-08 | 2013-12-12 | シャープ株式会社 | Vapor deposition device |
JP2016020242A (en) * | 2015-11-06 | 2016-02-04 | 大日本印刷株式会社 | Substrate holding frame body and package of substrate |
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