WO2003063258A1 - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur Download PDF

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Publication number
WO2003063258A1
WO2003063258A1 PCT/JP2002/000510 JP0200510W WO03063258A1 WO 2003063258 A1 WO2003063258 A1 WO 2003063258A1 JP 0200510 W JP0200510 W JP 0200510W WO 03063258 A1 WO03063258 A1 WO 03063258A1
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WO
WIPO (PCT)
Prior art keywords
wiring
input
output
thermal sensor
film
Prior art date
Application number
PCT/JP2002/000510
Other languages
English (en)
Japanese (ja)
Inventor
Naoki Yutani
Tsukasa Matsuura
Kazuhiko Tsutsumi
Original Assignee
Mitsubishi Denki Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Denki Kabushiki Kaisha filed Critical Mitsubishi Denki Kabushiki Kaisha
Priority to PCT/JP2002/000510 priority Critical patent/WO2003063258A1/fr
Priority to JP2003536318A priority patent/JPWO2003063258A1/ja
Publication of WO2003063258A1 publication Critical patent/WO2003063258A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect

Definitions

  • the present invention relates to a structure of a semiconductor device in which inputs and outputs of elements formed on a front surface of a substrate can be extracted from a back surface of the substrate.
  • FIG. 9 is an external view of an element schematically showing a part of a flow rate detecting element which is one of the thermal sensors disclosed in, for example, Japanese Patent Application Laid-Open No. Hei 11-12845.
  • FIG. 1 is a cross-sectional view including the mounting form of the thermal sensor of FIG.
  • reference numeral 101 denotes a flat substrate constituting a thermal sensor element 100 cut out of, for example, a silicon wafer, and 107 and 108 are formed on one surface of the flat substrate 1.
  • An insulating support film for example, a silicon nitride film.
  • the silicon nitride film 108 also serves as a protective film.
  • a thermal resistor film 102 is formed between the silicon nitride films 107 and 108.
  • the heat-sensitive resistor film 102 corresponds to a heat-generating portion used for a heat-generating resistor and a temperature-measuring resistor, and is made of, for example, platinum.
  • Reference numeral 103 denotes a wiring connecting the thermal resistance film 102 and the input / output pad 150, and is formed of the same film as the thermal resistance film 102, for example.
  • Reference numeral 151 denotes a thermal sensor package, for example, epoxy resin.
  • the substrate 101 of the thermal sensor element 100 0 0 is fixed to the package 15 1 with an adhesive 15 5 c 15 3 is the external input / output lead, 15 4 is the input / output pad 15 0 External input / output
  • a wire-bonding material for electrically connecting the leads 153 is, for example, a gold (Au) wire having a diameter of 25 ⁇ m.
  • Reference numeral 152 denotes a cover of the package 151, which covers the wire bond 154.
  • a silicon nitride film 107 having a thickness of about 410 is formed on a plate-shaped base material silicon wafer having a thickness of about 400 / m by a method such as a sputter method, and further thereon.
  • a heat-sensitive resistor film 102 made of platinum or the like having a thickness of 0.2 m is formed by an evaporation method, a sputtering method, or the like. After that, anneal for several hours at about 600 ° C for stabilization.
  • the platinum film 102 is subjected to patterning using a photoengraving method, an etching method, a dry etching method, or the like, whereby the heat generating portion 102 of the pattern as shown in FIG. And the wiring 103 are formed.
  • a silicon nitride film 108 having a thickness of about 0.8 ⁇ m is formed as a protective film by a sputtering method or the like.
  • a part of the back surface protective film 108 on the wiring 103 is etched using a photolithography method or the like to form an input / output unit 150.
  • the diaphragm 105 composed of the silicon nitride films 107 and 108 is formed on the surface opposite to the surface on which the support films 107 and 108 are disposed by using a photolithography method or the like. It is formed by performing a desired patterning, for example, by applying an Al force retching.
  • the thermal sensor element created in this way is fixed to the package 15 1 with adhesive 15 5, and the thermal sensor element input / output pad 150 and external input / output lead 15 3 are connected with the wire bond 15 4 ⁇ Continue. Finally, the lid 15 2 of the package is bonded and fixed to protect the wire bond portion. In this way, a thermal sensor on which the elements are mounted is completed.
  • the package 151 is designed in a wing shape so that there is no turbulence in the air flow near the detector 102 of the thermal sensor, and is designed to have no irregularities around the detector. Therefore, the distance X (shown in Fig. 10) from the detector to the package lid 152 needs to be large enough not to disturb the air flow, and it is preferable that it is about 2mm or more.
  • the signal output unit 150 is formed on the same surface as the detection unit 102 of the substrate 101 constituting the sensor element, The output section had to be sufficiently separated from the detection section so as not to affect it, and it was necessary to make the wiring area from the detection section to the output section long.
  • the element size is increased, the manufacturing cost of the element is increased, and the packaging structure is complicated and large in mounting, which increases the number of assembly steps and component costs.
  • the present invention has been made to solve the above problems, and has as its object to obtain a semiconductor device having a small and simple mounting structure. That is, in a semiconductor device having a semiconductor element section (in the above example, a thermal sensor having a thermosensitive resistor film in the semiconductor element section), the mounting structure for input / output wiring to the semiconductor element section is simplified and reduced in size. is there. Disclosure of the invention
  • a semiconductor device includes a semiconductor element on a first surface of a semiconductor substrate, a first input / output wiring to the semiconductor element, and a portion including at least a partial region of the first input / output wiring.
  • the semiconductor substrate is removed to form a diaphragm structure, and the first input / output wiring and the input / output portion formed on the second surface of the semiconductor substrate are connected to the second input / output via the diaphragm structure.
  • the structure was such that an insulating resin was provided in a removed portion of the semiconductor substrate on which the diaphragm structure was formed, by connecting with wiring.
  • the input / output wiring of the element formed on the surface of the substrate is connected to the wiring on the back surface of the substrate at the contact portion of the diaphragm structure that can be easily created.
  • the input / output section, which had to be performed, can now be formed on the back surface of the substrate, and the size of the element can be reduced, and the manufacturing cost can be reduced.
  • the choice of mounting structure is expanded, and it is possible to select the optimal mounting form according to the usage condition of the element, simplifying the mounting structure and assembling This has the effect of reducing man-hours and the number of mounted components, thus reducing costs.
  • the diaphragm is filled with resin, the backside wiring is protected from the outside air, and the strength of the diaphragm and the connection is improved.
  • the filler can reduce the thermal resistance of the diaphragm, suppress the heat generation of the contact when current is applied, and improve the electrical reliability of the contact.
  • the second input / output wiring and the input / output portion are covered with an insulating resin, so that if an insulating material having a passivation effect is used, entry of moisture from the outside air can be prevented.
  • This has the effect of improving the reliability of the contact portion with the backside wiring and the topside wiring.
  • the insulating resin placed in the diaphragm and the second filler The insulating resin covering the output wiring and the input / output portion may be the same material.
  • a thermal sensor can be easily configured, and the conventional method for detecting the surface of a substrate
  • the input / output unit which had to be formed sufficiently separated from the unit, can be formed on the back surface of the substrate, so that the size of the element can be reduced and the manufacturing cost can be reduced.
  • FIG. 1 is a schematic diagram for explaining a thermal sensor as a semiconductor device according to a first embodiment of the present invention
  • FIG. 2 is a cross-sectional view showing a mounting form
  • FIG. 3 is a cross-sectional view for explaining a thermal sensor according to a second embodiment of the present invention.
  • FIG. 4 is a cross-sectional view for explaining a thermal sensor according to a third embodiment of the present invention.
  • FIG. 5 is a cross-sectional view for explaining a thermal sensor according to a fourth embodiment of the present invention.
  • FIG. 6 is a sectional view for explaining a thermal sensor according to a fifth embodiment of the present invention.
  • FIG. 7 is a sectional view for explaining a thermal sensor according to a sixth embodiment of the present invention.
  • FIG. 8 is a cross-sectional view for explaining a semiconductor device according to another embodiment of the present invention.
  • FIG. 9 is an external view of a sensor element showing the appearance of a conventional thermal sensor
  • FIG. 10 is a schematic sectional view of the thermal sensor shown in FIG. BEST MODE FOR CARRYING OUT THE INVENTION
  • FIG. 1 is a diagram for explaining an example in which a semiconductor device according to an embodiment of the present invention is applied to a thermal flow sensor, and is an external view of an element of the flow sensor.
  • FIG. 2 is a cross-sectional view showing a mounting form of the flow sensor shown in FIG.
  • 1 is a flat substrate of a thermal sensor element cut out of, for example, a silicon wafer
  • 7 and 8 are insulating support films formed on one surface of the flat substrate 1, for example, a silicon nitride film. Consists of The silicon nitride film 8 also serves as a protective film.
  • the thermal resistor film 2 is formed between the silicon nitride films 7 and 8.
  • the heat-sensitive resistor film 2 corresponds to a heat-generating portion used for a heat-generating resistor and a temperature-measuring resistor, and is made of, for example, platinum (Pt). Also, the silicon substrate 1 around the thermal resistor film 2 has been removed (1a) so that the heat generated in the thermal resistor film 2 does not escape to the silicon substrate 1 and the temperature of the heat generating portion rises. A diaphragm 5 composed of the dangling silicon films 7 and 8 is formed.
  • Reference numeral 3 denotes a wiring on the front side electrically connected to the thermal resistor film 2 and is formed of, for example, the same film as the thermal resistor film 2.
  • the silicon substrate 1 is removed in a part of the front side wiring 3 (lb), and a diaphragm 4 composed of silicon nitride films 7 and 8 is formed.
  • Reference numeral 6 denotes a backside wiring
  • 9 denotes an insulating layer for electrically insulating the backside wiring 6 from the substrate 1, for example, a silicon nitride film.
  • Reference numeral 10 denotes a contact hole formed in the insulating layers 7 and 9 for electrically connecting the rear wiring 6 and the front wiring 3.
  • Reference numeral 11 denotes a backside protective film, for example, a silicon nitride film.
  • Reference numeral 12 denotes an opening of the backside protective film 11, which is an input / output pad of a thermal sensor.
  • the thermal sensor element 1 is fixed to the package 21 with an adhesive 18.
  • Reference numeral 23 denotes an external input / output lead
  • reference numeral 24 denotes a wire bonding material for electrically connecting the input / output pad 12 and the external input / output lead 23, for example, a gold (Au) wire having a diameter of 25 mm.
  • 2 2 is a package covering wire bond 24 2 1 is the lid.
  • the thermal sensor element 1 is fixed to the package 21 with an adhesive 18.
  • Reference numeral 19 denotes an insulating resin filled in the opening of the diaphragm 4, for example, a silicon resin or a polyimide resin.
  • a method of manufacturing a main part of the thermal sensor element shown in FIGS. 1 and 2 will be described.
  • a silicon wafer 1 having a thickness of about 400 an which is a plate-like base material
  • a silicon nitride film 7 having a thickness of, for example, about 1 ⁇ m is formed by a method such as a sputter method, and further, a thickness of, for example, A thermal resistor film 2 made of platinum or the like is formed by an evaporation method, a sputtering method, or the like.
  • the platinum film 2 is patterned by photolithography, wet etching, dry etching, or the like, thereby forming a heating portion 2 and a surface wiring 3 having a pattern as shown in FIG. Is done.
  • a silicon nitride film 8 having a thickness of about 0.8 ⁇ m is formed as a protective film by a sputtering method or the like.
  • the diaphragm 5 composed of the silicon nitride films 7 and 8 performs a desired patterning by using a photoengraving method or the like on a surface opposite to the surface on which the support films 7 and 8 are disposed. It is formed by performing re-etching or the like.
  • the diaphragm 4 may be formed at the same time.
  • a silicon nitride film 9 having a thickness of about 0.5 / m is formed on the back surface by a sputtering method or the like.
  • a desired patterning is performed from the back side by using photolithography or the like, and the insulating films 9 and 10 are etched to form contact holes 10.
  • the surface wiring 3 is exposed.
  • an AlSi film is formed as a wiring film on the back surface by a sputtering method or the like.
  • the back wiring film is subjected to desired patterning using photolithography or the like and etched to form the back wiring 6.
  • the front surface wiring 3 and the rear surface wiring 6 are electrically connected by the contact hole 10.
  • a silicon nitride film having a thickness of about 0.8 / m is formed as a back surface protective film 11 by a sputtering method or the like.
  • a part of the backside protection crotch 11 on the backside wiring 6 is etched using photolithography and output.
  • Form part 12 Finally, the opening of the diaphragm 4 is filled with an insulating material 19 of silicone resin.
  • the thermal sensor element thus created is fixed to the package 21 with an adhesive 18, and the thermal sensor element input / output pad 12 and the external input / output lead 23 are connected with a wire-to-bond 24.
  • the adhesive 18 may be of the same type as the insulating material 19.
  • the package lid 22 is bonded and fixed to protect the wire bond.
  • FIG. 3 is a view showing a cross section of a thermal sensor according to another embodiment of the present invention.
  • the same numbers as in FIGS. 1 and 2 indicate the same or corresponding parts.
  • the backside protective film 11 in FIG. 2 is omitted, and the backside wiring 6 is directly filled with an insulating resin 19.
  • the insulating resin 19 is, for example, a silicon resin or a polyimide resin.
  • Reference numeral 31 denotes an insulating material applied so as to cover an exposed portion of the back wiring 6, which is, for example, a silicon resin or polyimide resin.
  • These insulating materials 19 and 31 are made of a resin having a passivation effect for preventing intrusion of moisture or the like from the outside.
  • the back wiring 6 is completely covered with the insulating material 31 and the buried insulating material 19.
  • the insulating material 31 may be of the same type as the insulating material 19. Further, it may be the same type as the adhesive 18.
  • Example 3
  • FIG. 4 is a view showing a cross section of a thermal sensor according to another embodiment of the present invention, and shows an example in which the insulating material 31 in FIG. 3 is the same material as the embedded insulating material 19 and is formed at the same time.
  • the thermal sensor element is fixed to the package 21 with an adhesive 18 and the thermal sensor element input / output pad 12 and the external input / output lead 23 are connected by a wire-to-bond 24. Fill the opening with silicone resin 19.
  • an insulating material 19 including a wire-to-bond portion is applied so that the back wiring 6 is completely covered.
  • the cover 22 is bonded and fixed to protect the wire-to-bond portion.
  • FIGS. 3 and 4 show the structure in which the back surface protective film 11 shown in FIG. 2 is omitted, these may have a structure in which the back surface protective film 11 is provided.
  • the insulating materials 19, 31 and the protective film 11 can prevent the intrusion of water or the like from the outside twice, and the reliability can be further improved.
  • Example 4
  • FIG. 5 is a view showing a cross section of a thermal sensor according to another embodiment of the present invention.
  • the same numbers as in FIGS. 1 and 2 indicate the same or corresponding parts.
  • 15 is a bump made of gold or solder.
  • Reference numeral 32 denotes an insulating sealing material filled around the bump 15. This sealing material 32 may be of the same type as the adhesive material 18. Further, it may be the same type as the insulating material 19.
  • a gold bump having a height of, for example, 10 ⁇ m is formed on at least one of the input / output pad 12 and the output lead 23 of the thermal sensor element.
  • Gold bumps are formed by pressing and fixing gold on individual pads using a wire-bonder, or by plating. Align the pad 12 of the thermal sensor element so that it is directly above the pad of the output lead 23, and then pressurize to raise the temperature and electrically connect the pads with a gold bump. At this time, ultrasonic waves may be applied to make the joint stronger.
  • a molten metal such as solder is used as the bump 15, it is prepared as follows.
  • solder bumps of about several tens of m / m are formed on both or any of the input / output pads 12 and the output leads 23 of the thermal sensor element by plating.
  • the thermal sensor element is aligned so that the pad 12 is directly above the pad 14 of the wiring board 13 and then heated to a temperature at which the solder melts, and the pads are electrically connected by solder bumps.
  • a sealing material 32 such as an epoxy resin and an adhesive 18 are put between the element and the package 21 and cured.
  • a sealing material 32 that has a passivation effect is used.
  • FIG. 6 is a view showing a cross section of a thermal sensor according to another embodiment of the present invention.
  • reference numeral 13 denotes a wiring board for connecting the thermal sensor element and the signal processing circuit element 17 and is formed of, for example, glass epoxy resin.
  • Reference numeral 14 denotes a wiring layer of the wiring board 13 which is electrically connected to the input / output pads 12 of the thermal sensor via bumps 15 and also used as bumps 16 for input / output pads of the signal processing circuit element 17. It is connected.
  • the bumps 15 and 16 are formed of a molten metal such as gold or solder. The mounting method of this embodiment is described below.
  • a gold bump having a height of several tens / zm is formed on at least one of the input / output pad 12 of the thermal sensor element and the pad 14 of the wiring board 13.
  • Gold bumps are formed by pressing and fixing gold on individual pads using a wire bonder, or by plating.
  • the thermal sensor element is aligned so that the pad 12 is directly above the pad 14 of the wiring board 13 and then pressurized to increase the temperature, and the pads are electrically connected with gold bumps. At this time, ultrasonic waves may be applied to make the bonding stronger.
  • a molten metal such as solder is used as the bump 15, it is prepared as follows.
  • a solder bump of about several tens of meters or slightly more is formed on both or one of the input / output pad 12 of the thermal sensor element and the pad 14 of the wiring board 13.
  • the thermal sensor element is aligned so that the pad 12 is directly above the pad 14 of the wiring board 13 and then heated to a temperature at which the solder melts, and the pads are electrically connected by solder bumps.
  • Elements (not shown) such as elements 17 and resistors of the signal processing circuit are connected to the wiring board in the same manner.
  • sealing material 32 such as epoxy resin.
  • the adhesive 18 is put between the element and the circuit board and cured.
  • the sealing material 32 and the adhesive 18 may be the same material.
  • the insulating protection film 11 on the back surface can be omitted as in the embodiment of FIG. And the number of production steps can be reduced. Finally, the entire surface except the detection surface is sealed with mold resin 25. This structure enables downsizing including the signal processing circuit. Embodiment 6.
  • FIG. 7 is a view showing a cross section of a thermal sensor according to another embodiment of the present invention.
  • 26 is a circuit portion of the signal processing circuit element 17, and 27 is a surface wiring.
  • Reference numeral 28 denotes a rear surface wiring of the signal processing circuit element 17, and reference numeral 29 denotes a diaphragm opening for connecting the front surface wiring 27 and the rear surface wiring 28, which is insulated in the same manner as the opening of the diaphragm 4 of the sensor element.
  • Resin 19 is filled. These are created in the same way as the sensor elements.
  • the back wiring 6 of the sensor element and the front wiring 27 of the signal processing circuit element 17 are electrically connected by the bump 15.
  • the input and output of the sensor element are connected to the circuit section 26 by the surface wiring 27 and driven and signal processed.
  • the surface wiring of the output of the circuit part 25 is connected to the back wiring 28 at the diaphragm opening 29, connected to the circuit board 13 by the bump 16, and connected to the outside by the lead 23.
  • the method of connecting the bumps is the same as that of the fifth embodiment.In this embodiment, the bumps 16 are used to connect the circuit board and the back wiring of the signal processing circuit 17, and then the back wiring of the sensor element and the front wiring of the signal processing circuit are connected.
  • the bumps 15 may be used for connection, or the front wiring of the signal processing circuit 17 and the back wiring of the sensor element 1 may be connected by the bump 15 and then the back wiring of the signal processing circuit 17 and the circuit board 13 may be bumped. You may connect with 16. Finally, the entire surface except for the detection surface is sealed with mold resin 25. This structure enables downsizing including the signal processing circuit. Although a thermal type flow sensor having a semiconductor element portion provided with a thermosensitive resistor film as a backside output semiconductor device has been described as an example, this may be another sensor. Further, a general semiconductor element such as a memory or a logic may be used. FIG.
  • FIG. 8 shows a partial cross-sectional view of a semiconductor device in the case where the memory element 50 and the logic element 60 are connected in the same structure as in FIG.
  • 51 is a circuit portion of the memory element 50
  • 52 is a surface wiring.
  • Reference numeral 53 denotes a rear surface wiring of the memory element 50
  • 54 denotes a diaphragm opening for connecting the front surface wiring 52 and the rear surface wiring 53, and the opening of the diaphragm 4 of the sensor element shown in the above embodiment.
  • the insulating resin 19 is filled.
  • Reference numeral 61 denotes a circuit portion of the mouth diode 60
  • 62 denotes a surface wiring.
  • Reference numeral 63 denotes a back surface wiring of the logic element 60
  • reference numeral 64 denotes a diaphragm opening for connecting the front surface wiring 62 and the back surface wiring 63, and the opening of the diaphragm 4 of the sensor element shown in the above embodiment.
  • insulating resin 19 is filled.
  • the bumps 65 connect the backside wiring 53 of the memory element 50 to the front side wiring 62 of the logic element 60
  • the bumps 66 connect the backside wiring 63 of the logic element 60 to the circuit board 13. ing.
  • the mounting and assembling method is the same as in the case of FIG.
  • the whole is sealed with a mold resin 25.
  • the semiconductor device according to the present invention relates to the structure of a semiconductor device in which the input and output of elements formed on the front surface of a substrate can be taken out from the back surface of the substrate.
  • a thermal sensor or the like can be considered.
  • it is used for a flow sensor or a pressure sensor for measuring an intake air amount of an internal combustion engine for a vehicle or the like.

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  • Measuring Fluid Pressure (AREA)
  • Measuring Volume Flow (AREA)
  • Pressure Sensors (AREA)

Abstract

L'invention concerne un dispositif semi-conducteur qui permet d'éliminer partiellement la matière de base d'un substrat semi-conducteur (2) de l'arrière d'une région partielle d'un câblage allant jusqu'à un élément semi-conducteur (2) disposé à la surface d'un substrat semi-conducteur (1) à partir d'une section de diaphragme (4) comportant des films d'isolation supérieur et inférieur d'un câblage avant (3). Une partie du film d'isolation à l'arrière du diaphragme présente une fenêtre de contact (10) allant jusqu'au câblage avant, et un câblage arrière (6) formé à l'arrière du substrat via le film d'isolation est connecté électriquement au câblage avant à travers la fenêtre de contact. Le câblage arrière est connecté électriquement à une plage de connexion d'entrée/de sortie arrière (12), et une résine d'isolation (19) enrobe l'ouverture arrière de la section de diaphragme.
PCT/JP2002/000510 2002-01-24 2002-01-24 Dispositif semi-conducteur WO2003063258A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2002/000510 WO2003063258A1 (fr) 2002-01-24 2002-01-24 Dispositif semi-conducteur
JP2003536318A JPWO2003063258A1 (ja) 2002-01-24 2002-01-24 半導体装置

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Application Number Priority Date Filing Date Title
PCT/JP2002/000510 WO2003063258A1 (fr) 2002-01-24 2002-01-24 Dispositif semi-conducteur

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WO2003063258A1 true WO2003063258A1 (fr) 2003-07-31

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Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010008225A (ja) * 2008-06-26 2010-01-14 Denso Corp 熱式流量センサ及びその製造方法
JP2010107315A (ja) * 2008-10-29 2010-05-13 Denso Corp 熱式流量センサ
JP2011501126A (ja) * 2007-10-11 2011-01-06 メンシス インコーポレイテッド 半導体マイクロアネモメータ装置およびファブリケーション方法
EP2356409A1 (fr) * 2008-11-06 2011-08-17 Continental Automotive GmbH Capteur de débit massique et véhicule automobile doté du capteur de débit massique
JP2012103078A (ja) * 2010-11-09 2012-05-31 Denso Corp 流量センサ
JP2012112737A (ja) * 2010-11-23 2012-06-14 Denso Corp 感熱式流量センサ
JP2012533750A (ja) * 2009-07-22 2012-12-27 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 短レスポンス時間及び高感度を持つ熱流センサ集積回路
JP2014001969A (ja) * 2012-06-15 2014-01-09 Hitachi Automotive Systems Ltd 熱式流量計
JP2014106096A (ja) * 2012-11-27 2014-06-09 Denso Corp 力学量センサおよびその製造方法
US8886317B2 (en) 2004-12-17 2014-11-11 Cardiac Pacemakers, Inc. MRI operation modes for implantable medical devices
US8897875B2 (en) 2007-12-06 2014-11-25 Cardiac Pacemakers, Inc. Selectively connecting the tip electrode during therapy for MRI shielding
US8977356B2 (en) 2009-02-19 2015-03-10 Cardiac Pacemakers, Inc. Systems and methods for providing arrhythmia therapy in MRI environments
US9381371B2 (en) 2009-12-08 2016-07-05 Cardiac Pacemakers, Inc. Implantable medical device with automatic tachycardia detection and control in MRI environments
US9561378B2 (en) 2008-10-02 2017-02-07 Cardiac Pacemakers, Inc. Implantable medical device responsive to MRI induced capture threshold changes
JP2020016465A (ja) * 2018-07-23 2020-01-30 ミネベアミツミ株式会社 流体センサ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000310553A (ja) * 1999-04-27 2000-11-07 Yazaki Corp フローセンサ
JP2001074531A (ja) * 1999-09-02 2001-03-23 Unisia Jecs Corp 流量検出装置及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000310553A (ja) * 1999-04-27 2000-11-07 Yazaki Corp フローセンサ
JP2001074531A (ja) * 1999-09-02 2001-03-23 Unisia Jecs Corp 流量検出装置及びその製造方法

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8886317B2 (en) 2004-12-17 2014-11-11 Cardiac Pacemakers, Inc. MRI operation modes for implantable medical devices
JP2011501126A (ja) * 2007-10-11 2011-01-06 メンシス インコーポレイテッド 半導体マイクロアネモメータ装置およびファブリケーション方法
US8897875B2 (en) 2007-12-06 2014-11-25 Cardiac Pacemakers, Inc. Selectively connecting the tip electrode during therapy for MRI shielding
JP2010008225A (ja) * 2008-06-26 2010-01-14 Denso Corp 熱式流量センサ及びその製造方法
US9561378B2 (en) 2008-10-02 2017-02-07 Cardiac Pacemakers, Inc. Implantable medical device responsive to MRI induced capture threshold changes
JP2010107315A (ja) * 2008-10-29 2010-05-13 Denso Corp 熱式流量センサ
EP2356409A1 (fr) * 2008-11-06 2011-08-17 Continental Automotive GmbH Capteur de débit massique et véhicule automobile doté du capteur de débit massique
JP2012507730A (ja) * 2008-11-06 2012-03-29 コンチネンタル オートモーティヴ ゲゼルシャフト ミット ベシュレンクテル ハフツング マスフローセンサおよびマスフローセンサを備えた自動車
US8977356B2 (en) 2009-02-19 2015-03-10 Cardiac Pacemakers, Inc. Systems and methods for providing arrhythmia therapy in MRI environments
JP2012533750A (ja) * 2009-07-22 2012-12-27 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 短レスポンス時間及び高感度を持つ熱流センサ集積回路
US9072464B2 (en) 2009-07-22 2015-07-07 Koninklijke Philips N.V. Thermal flow sensor integrated circuit with low response time and high sensitivity
US9381371B2 (en) 2009-12-08 2016-07-05 Cardiac Pacemakers, Inc. Implantable medical device with automatic tachycardia detection and control in MRI environments
JP2012103078A (ja) * 2010-11-09 2012-05-31 Denso Corp 流量センサ
JP2012112737A (ja) * 2010-11-23 2012-06-14 Denso Corp 感熱式流量センサ
JP2014001969A (ja) * 2012-06-15 2014-01-09 Hitachi Automotive Systems Ltd 熱式流量計
JP2014106096A (ja) * 2012-11-27 2014-06-09 Denso Corp 力学量センサおよびその製造方法
JP2020016465A (ja) * 2018-07-23 2020-01-30 ミネベアミツミ株式会社 流体センサ

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