WO2003038880A1 - Procede de formation de chemin de decoupe sur une tranche de semi-conducteur, et dispositif pour former un chemin de decoupe - Google Patents
Procede de formation de chemin de decoupe sur une tranche de semi-conducteur, et dispositif pour former un chemin de decoupe Download PDFInfo
- Publication number
- WO2003038880A1 WO2003038880A1 PCT/JP2002/011177 JP0211177W WO03038880A1 WO 2003038880 A1 WO2003038880 A1 WO 2003038880A1 JP 0211177 W JP0211177 W JP 0211177W WO 03038880 A1 WO03038880 A1 WO 03038880A1
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- WIPO (PCT)
- Prior art keywords
- semiconductor wafer
- scribe line
- silicon wafer
- semiconductor
- wafer
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
- B28D1/221—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention is used for forming a scribe line for dividing a semiconductor wafer such as a silicon wafer or the like on which various semiconductor elements are patterned into semiconductor chips of a predetermined size, and a method for forming the scribe line. Scribe line forming equipment
- a silicon wafer having various semiconductor elements patterned on its surface is divided into semiconductor chips of a predetermined size along a boundary of the patterning.
- methods such as dicing and scribing are known.
- a score line is formed on the surface of a silicon wafer along the boundary of each semiconductor chip.
- the silicon wafer is divided into pieces in consideration of the crystal orientation of the silicon wafer. Is divided into a plurality of semiconductor chips.
- diamond pieces are pressed against the surface of the silicon wafer to form the score lines.Therefore, depending on the scribe conditions, cracks and chips may occur frequently in the process of forming the score lines on the silicon wafer surface. You.
- dicing is generally widely performed.
- a blade embedded with diamond abrasive grains is rotated at high speed to cut a silicon wafer along boundaries between semiconductor chips.
- the silicon wafer is mechanically cut. This may cause chipping around the cut portion of the silicon wafer. When such chipping occurs, fine pieces of the wafer generated by the chipping may enter the semiconductor element as foreign matter. The semiconductor element into which the foreign matter has entered may not be able to perform a predetermined function.
- a laser beam is continuously irradiated along a line to be cut in order to cut the glass substrate, and the vicinity of the laser beam is continuously cut.
- a method of forming scribe lines on a glass substrate by cooling has been developed. It is also considered to form a scribe line on a silicon wafer by using such a combination of heating and cooling by a laser beam.
- the electric function of the semiconductor element provided on the surface of the silicon wafer may be degraded, and the semiconductor device has not been put to practical use.
- An object of the present invention is intended to solve such a problem.
- An object of the present invention is to surely divide a semiconductor wafer such as a silicon wafer without causing chipping, cracking, etc. in the semiconductor wafer such as a silicon wafer.
- An object of the present invention is to provide a method of forming a scribe line on a semiconductor wafer and a scribe line forming apparatus used in the method. Disclosure of the invention
- the method of forming a scribe line on a semiconductor wafer includes the steps of preparing a semiconductor wafer having a large number of semiconductor elements patterned on a surface by a wafer manufacturing process; and forming all the scribe lines formed on the surface of the semiconductor wafer.
- a laser spot is used to continuously heat the semiconductor wafer at a temperature lower than the softening point of the semiconductor wafer along the line where the scribe line is to be formed. Cooling continuously along the line.
- An alignment mark is provided at a predetermined position on the surface of the semiconductor wafer, and the alignment table is used to position the table to which the semiconductor device is fixed. I do.
- the positioning of the table to which the semiconductor wafer is fixed is performed based on an image obtained by transmitting the alignment mark through the transparent film.
- the apparatus for forming a scribe line of a semiconductor wafer of the present invention a large number of semiconductor elements are patterned on a surface by a wafer manufacturing process, and an alignment mark is provided on the surface, and the surface is formed of a transparent film.
- the semiconductor wafer covered by the semiconductor wafer is continuously formed on the back surface of the semiconductor wafer along a line on which a scribe line is to be formed, with a table placed with its back surface facing upward, and a scribe line. And a region near a region heated at a temperature lower than the softening point of the semiconductor wafer mounted on the table by the laser spot along the line to be formed with the scrape line.
- FIG. 1 is a schematic side view for explaining an embodiment of a scribe line forming method of the present invention.
- FIG. 2 is a side view of a silicon wafer obtained by the implementation process.
- FIG. 3 is a schematic front view showing an example of the scribe line forming apparatus of the present invention.
- FIG. 4 is a schematic enlarged view of a main part of the scribe line forming apparatus.
- FIG. 5 is a schematic plan view of a rotary table of the scribe line forming device.
- FIG. 6 is a diagram illustrating the operation of the scribe line forming apparatus.
- BEST MODE FOR CARRYING OUT THE INVENTION-Hereinafter, embodiments of the present invention will be described in detail. A case where a silicon wafer is used as a semiconductor wafer will be described, but the present invention can be similarly applied to other semiconductor wafers.
- various semiconductor elements are individually patterned in respective semiconductor chip regions on the surface of a silicon wafer. Thereafter, the silicon wafer surface is cleaned to remove natural oxide films, contamination, and the like.
- a scribe line for dividing each chip region is formed on the silicon wafer by the method for forming a scribe line on a silicon wafer according to the present invention. Thereafter, the silicon wafer is cut along the scribe lines to form a plurality of semiconductor chips.
- a semiconductor element is patterned on a surface, and a silicon wafer 50 whose surface is cleaned is prepared. Note that a pair of alignment marks is provided on the surface of the silicon wafer 50.
- the prepared silicon wafer 50 is placed on a predetermined work table 61 with the semiconductor element patterned surface facing upward.
- a transparent film 62 is attached to the surface of the silicon wafer 50 on which the semiconductor elements have been patterned. As shown, the entire surface of the silicon wafer 50 is covered with the transparent film 62. As a result, the surface of the silicon wafer 50 on which the semiconductor elements are patterned is protected by the transparent film 62. In such a state, the silicon wafer 50 is transported and placed on the table of the scribe line forming apparatus of the present invention, and is held on the table surface.
- FIG. 3 is a schematic configuration diagram showing one example of a scribe line forming apparatus of the present invention.
- the scribe line forming apparatus has a slide table 12 that reciprocates along a predetermined horizontal direction (Y direction) on a horizontal gantry 11.
- the slide table 12 can slide along a pair of guide rails 14 and 15 in a horizontal state on a pair of guide rails 14 and 15 arranged in parallel in the Y direction on the upper surface of the gantry 11 It is supported by.
- a pole screw 13 is provided at an intermediate portion between the guide rails 14 and 15 in parallel with the guide rails 14 and 15 so as to be rotated by a motor (not shown).
- the pole screw 13 is rotatable forward and backward, and the ball nut 16 is attached to the pole screw 13 so as to be screwed.
- the pole nut 16 is integrally attached to the slide tape 12 without rotating, and slides in both directions along the pole screw 13 by the forward and reverse rotation of the pole screw 13.
- the slide table 12 integrally attached to the pole nut 16 slides in the Y direction along each of the guide rails 14 and 15.
- a pedestal 19 is arranged on the slide table 12 in a horizontal state.
- the pedestal 19 is slidably supported by a pair of guide rails 21 arranged in parallel on the slide table 12.
- Each guide rail 21 is arranged along an X direction orthogonal to the Y direction, which is the slide direction of the slide table 12.
- a pole screw 22 is disposed in the center between the guide rails 21 in parallel with each guide rail 21 so that the pole screw 22 can be rotated forward and backward by the motor 23. .
- a ball nut 24 is attached to the hole screw 22 in a state where it is screwed.
- the pole nut 24 is integrally mounted on the pedestal 19 in a non-rotating state, and is moved in both directions along the pole screw 22 by the forward and reverse rotation of the pole screw 22. Move. As a result, the pedestal 19 slides in the X direction along each guide rail 21.
- a rotating mechanism 25 is provided on the pedestal 19, and a rotating table 26 on which a silicon wafer 50 on which a scribe line is to be formed is placed, It is provided in a state.
- the rotating mechanism 25 rotates the rotating table 26 around a central axis along the vertical direction.
- the rotating table 26 rotates at an arbitrary rotation angle 0 with respect to the reference position. Can be rotated.
- a silicon wafer 50 is placed so that the surface covered with the transparent film 62 is in contact with the upper surface of the rotating table 26, for example, by a suction chuck. After being fixed with respect to 6, the rotary table 26 is positioned. Therefore, on the turntable 26, the silicon wafer 50 is placed with the back surface on which the semiconductor elements are not patterned facing upward.
- FIG. 4 is a schematic enlarged view of the periphery of the turntable 26, and FIG. 5 is a schematic plan view of the turntable 26.
- a pair of alignment marks are provided on the surface of the silicon wafer 50 mounted on the disk-shaped rotary table 26, and the silicon wafer 50 mounted on the rotary table 26 is provided.
- a circular through hole 26a is provided to face each of the alignment marks.
- an image pickup mechanism 38 having an optical axis substantially coincident with the axis of each through hole 26a is mounted integrally with the turntable 26.
- Each imaging mechanism 38 is connected to a rotary camera through a CCD camera 38a and a through hole 26a.
- an optical system 38b that allows each alignment mark of the silicon wafer 50 placed on the table 26 to be imaged by the CCD camera 38a.
- the imaging result of each imaging mechanism 38 is output to an image processing device (not shown).
- a support 31 is disposed at an appropriate distance from the rotary table 26.
- the support table 31 is horizontally supported by the lower end of the optical holder 13 arranged vertically.
- the upper end of the optical holder 1 3 It is attached to the lower surface of the mounting base 32 provided on the gantry 11.
- a laser oscillator 34 that oscillates a laser beam is provided on the mounting table 32.
- An optical system in which the laser beam oscillated from the laser oscillator 34 is held in an optical holder 133 is provided. Is irradiated.
- the laser beam oscillated from the laser oscillator 34 is irradiated onto the back surface of the silicon wafer 50 where the semiconductor elements are not patterned, so that the semiconductor chip in the silicon wafer 50 is formed between the regions to be the semiconductor chips.
- An elongated elliptical laser spot is formed along the provided scribe line formation line.
- the optical holder 13 on the support 31 is located at a suitable distance in the X direction, and is opposed to the silicon wafer 50 placed on the rotating table 26, and is provided with a cooling nozzle. 3 7 are arranged.
- the cooling nozzle 37 is cooled by a laser beam emitted from the optical holder 133 at an appropriate distance from one end in the long axis direction of a laser spot formed on the back surface of the silicon wafer. It blows refrigerant such as water. From this cooling nozzle 3 7, mixed flow of water and compressed air, cooling water, compressed air, H e gas as N 2 gas, a coolant such as C_ ⁇ 2 gas is injected into the silicon wafer 5 0 Has become.
- the support 31 is provided with an imaging mechanism 40 for imaging the back surface of the silicon wafer 50 in the vicinity of the cooling nozzle 37.
- the image pickup mechanism 40 includes a CCD (image pickup device) arranged in a predetermined area close to a cooling medium blown from the cooling nozzle 37 to the back surface of the silicon wafer 50 via an optical system 42. 41 is provided to detect whether the scribe line has been formed reliably.
- the imaging area of the CCD 41 is linear along the longitudinal direction of an elliptical laser spot formed on the back surface of the silicon wafer 50 by the laser beam irradiated on the silicon wafer 50, and is cooled. This is a region close to the position where the coolant is blown from the nozzle 37.
- the laser beam emitted from the optical holder 33 causes the support table 31 to cool the laser spot formed on the back surface of the silicon wafer 50.
- a wheel cutout 35 is provided on the opposite side to the wheel 37.
- the wheel cutter 35 is arranged along the long axis direction of a laser spot formed on the back surface of the silicon wafer 50 by the laser beam emitted from the optical holder 13, and is provided with a rotating table 2.
- a notch is formed at a side edge of the silicon wafer 50 placed on 6 in a direction along a line where a scribe line is to be formed.
- the wheel cutter 35 is held up and down by a tip holder.
- the scribe line forming apparatus for the silicon wafer 50 having such a configuration, when forming the scribe line on the silicon wafer 50, first, the size of the silicon wafer 50, the position of the line where the scribe line is to be formed, and the like are determined. An information message is input to the control unit.
- the silicon wafer 50 is placed on the turntable 26 with the surface covered with the transparent film 62 facing downward, fixed by suction means, and positioned.
- the surface of the silicon wafer 50 on which the semiconductor elements and the like are formed is covered with the transparent film 62, there is no possibility that the semiconductor elements and the like formed on the surface are damaged by the turntable 26 and become loose. .
- the silicon wafer 50 is rotated with respect to the rotary table 26 such that a pair of alignment marks provided on the surface of the silicon wafer 50 face the respective through holes 26 a provided in the rotary table 26. Is fixed by suction.
- each alignment mark provided on the surface of the silicon wafer 50 is individually determined by the CCD camera 38a of each imaging mechanism 38. It is imaged. Then, an image processing device (not shown) calculates the amount of deviation between the center of imaging by the CCD camera 38a of each imaging mechanism 38 and the center of each alignment mark, and gives the calculation result to the control unit. You.
- the control unit positions the rotary table 26 based on the calculation result of the deviation amount of the image processing apparatus so that the long axis direction of the laser spot and the line to be formed of the scribe line of the silicon wafer 50 are aligned. I do. Then, when the line to be formed of the scribe line on the side of the silicon wafer 50 is opposed to the wheel cut 35, the wheel cut 35 is lowered and the scribe line of the silicon wafer 50 is formed. A cut is formed along the end of the constant line.
- the rotary table 26 is slid in the X direction along the line where the scribe line is to be formed, while the laser beam is oscillated from the laser oscillator 34 and cooled from the cooling nozzle 37. Water is injected with the compressed air.
- the laser beam oscillated from the laser oscillating device 34 causes an elliptical laser spot elongated on the back surface of the silicon wafer 50 along the line SL where the scribe line is to be formed.
- LS is formed.
- a cooling point CP is formed behind the laser spot LS at an appropriate interval by blowing the coolant along the line SL on which the scribe line is to be formed.
- the back surface of silicon wafer 50 is heated by laser spot L S to a temperature lower than the temperature at which silicon wafer 50 is melted, that is, lower than the softening point of silicon wafer 50.
- the back surface of the silicon wafer 50 irradiated with the laser spot LS is heated without being melted, and a compressive stress is generated in the heated portion.
- a cooling medium such as cooling water is sprayed from a cooling nozzle 37 near the laser spot LS forming area on the back surface of the silicon wafer 50 to form a cooling spot CP.
- the back surface of the silicon wafer 50 is cooled by the cooling spot CP.
- a tensile stress is generated in the cooling spot CP.
- the back surface of the silicon wafer 50 is close to the region where the compressive stress is generated. As a result, a tensile gradient is generated between the two regions based on the respective stresses, and the back surface of the silicon wafer 50 is cut from the cut TR formed at the end of the silicon wafer 50 in advance. Vertical cracks necessary for dividing the silicon wafer along the scribe line forming line SL in the thickness direction are formed.
- vertical crack lines (scribe lines) required for the division are sequentially formed along the lines for forming the scribe lines to be divided into the semiconductor chips.
- the silicon wafer 50 becomes In the state where the transparent film 62 is stuck, it is supplied to the next dividing step, and is divided along a vertical crack line (scribe line) necessary for the dividing step.
- the silicon wafer 50 is fixed on the rotary table 26 by suction.
- the rotary table 2 by mechanically gripping the peripheral surface of the silicon wafer 50. 6 may be fixed.
- a notch TR is formed at the end of the silicon wafer 50, and then a laser spot and a cooling spot are arranged in this order along a line for forming a scribe line.
- a vertical crack line (scribe line) required for cutting was formed by moving the groove TR to the inside of the silicon substrate.
- a laser spot passes through the end of the silicon wafer 50 instead of forming a cut in advance at the end of the silicon wafer 50.
- notch forming means a diamond tool or a cemented carbide tool for scribing brittle materials, or a pulsed laser such as a YAG laser can be used. Not only the edge of the silicon wafer but also the silicon wafer can be used. A cut can be formed at any position on the back surface.
- the second laser spot is formed on the back surface of the silicon wafer, so that the vertical cracks necessary for the division already formed reach the surface (film surface) side of the silicon wafer. It is possible to do. If this method is adopted, the dividing step can be simplified.
- the back surface is heated by a laser beam while the front surface of the semiconductor wafer where the semiconductor elements are patterned is protected by the transparent film.
- a vertical crack line (scribe line) necessary for dividing the semiconductor wafer is formed, so that the surface of the semiconductor wafer is not damaged.
- the apparatus for forming a scribe line on a semiconductor wafer according to the present invention can reliably carry out such a method for forming a scribe line.
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mining & Mineral Resources (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-7016495A KR100509651B1 (ko) | 2001-10-31 | 2002-10-28 | 반도체 웨이퍼의 스크라이브 라인의 형성방법 및스크라이브 라인의 형성장치 |
EP02770283A EP1441385A4 (en) | 2001-10-31 | 2002-10-28 | METHOD FOR FORMING A CROP LINE ON A SEMICONDUCTOR WAFER AND A CROWDING DEVICE |
JP2003541038A JPWO2003038880A1 (ja) | 2001-10-31 | 2002-10-28 | 半導体ウエハのスクライブ線の形成方法およびスクライブ線の形成装置 |
US10/483,353 US7015118B2 (en) | 2001-10-31 | 2002-10-28 | Method for forming a scribe line on a semiconductor device and an apparatus for forming the scribe line |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001335149 | 2001-10-31 | ||
JP2001-335149 | 2001-10-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003038880A1 true WO2003038880A1 (fr) | 2003-05-08 |
Family
ID=19150171
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2002/011177 WO2003038880A1 (fr) | 2001-10-31 | 2002-10-28 | Procede de formation de chemin de decoupe sur une tranche de semi-conducteur, et dispositif pour former un chemin de decoupe |
Country Status (7)
Country | Link |
---|---|
US (1) | US7015118B2 (ja) |
EP (1) | EP1441385A4 (ja) |
JP (1) | JPWO2003038880A1 (ja) |
KR (1) | KR100509651B1 (ja) |
CN (1) | CN1311528C (ja) |
TW (1) | TWI254984B (ja) |
WO (1) | WO2003038880A1 (ja) |
Cited By (1)
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JP2021170575A (ja) * | 2020-04-14 | 2021-10-28 | リンテック株式会社 | 接着シートおよび処理装置 |
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TWI226877B (en) * | 2001-07-12 | 2005-01-21 | Mitsuboshi Diamond Ind Co Ltd | Method of manufacturing adhered brittle material substrates and method of separating adhered brittle material substrates |
US6700096B2 (en) * | 2001-10-30 | 2004-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment |
US7105048B2 (en) * | 2001-11-30 | 2006-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus |
WO2007049668A1 (ja) * | 2005-10-28 | 2007-05-03 | Mitsuboshi Diamond Industrial Co., Ltd. | 脆性材料基板のスクライブライン形成方法およびスクライブライン形成装置 |
DE102007004953A1 (de) * | 2007-01-26 | 2008-07-31 | Tesa Ag | Heizelement |
DE102008001229A1 (de) * | 2007-04-25 | 2008-10-30 | Ceramtec Ag | Chip-Resistor-Substrat |
JP5139852B2 (ja) * | 2008-03-17 | 2013-02-06 | 三星ダイヤモンド工業株式会社 | スクライブ装置及びスクライブ方法 |
JP5309728B2 (ja) * | 2008-06-27 | 2013-10-09 | 富士通セミコンダクター株式会社 | レチクルデータ作成方法及びレチクルデータ作成装置 |
KR101041137B1 (ko) * | 2009-03-25 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 기판 절단 장치 및 이를 이용한 기판 절단 방법 |
KR20100107253A (ko) * | 2009-03-25 | 2010-10-05 | 삼성모바일디스플레이주식회사 | 기판 절단 장치 및 이를 이용한 기판 절단 방법 |
US8706288B2 (en) * | 2009-05-21 | 2014-04-22 | Electro Scientific Industries, Inc. | Apparatus and method for non-contact sensing of transparent articles |
US8482837B2 (en) | 2010-03-05 | 2013-07-09 | Sage Electrochromics, Inc. | Lamination of electrochromic device to glass substrates |
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JP6736651B2 (ja) | 2018-12-27 | 2020-08-05 | 浜松ホトニクス株式会社 | 冷却ユニット、対物レンズモジュール、半導体検査装置、半導体検査方法 |
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- 2002-10-28 JP JP2003541038A patent/JPWO2003038880A1/ja active Pending
- 2002-10-28 CN CNB028217993A patent/CN1311528C/zh not_active Expired - Fee Related
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- 2002-10-28 WO PCT/JP2002/011177 patent/WO2003038880A1/ja active Application Filing
- 2002-10-28 EP EP02770283A patent/EP1441385A4/en not_active Withdrawn
- 2002-10-30 TW TW091132145A patent/TWI254984B/zh active
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JP2001130921A (ja) | 1999-10-29 | 2001-05-15 | Mitsuboshi Diamond Industrial Co Ltd | 脆性基板の加工方法及び装置 |
WO2002022301A1 (fr) * | 2000-09-13 | 2002-03-21 | Hamamatsu Photonics K.K. | Procede et dispositif d'usinage par rayonnement laser |
JP2002362933A (ja) * | 2001-06-11 | 2002-12-18 | Seiko Epson Corp | 被加工物の割断方法及び割断装置 |
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JP2021170575A (ja) * | 2020-04-14 | 2021-10-28 | リンテック株式会社 | 接着シートおよび処理装置 |
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KR100509651B1 (ko) | 2005-08-23 |
US7015118B2 (en) | 2006-03-21 |
CN1579013A (zh) | 2005-02-09 |
KR20040038916A (ko) | 2004-05-08 |
TW200300572A (en) | 2003-06-01 |
CN1311528C (zh) | 2007-04-18 |
JPWO2003038880A1 (ja) | 2005-02-24 |
TWI254984B (en) | 2006-05-11 |
EP1441385A4 (en) | 2009-11-18 |
US20040214408A1 (en) | 2004-10-28 |
EP1441385A1 (en) | 2004-07-28 |
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