Classifications

• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
  • C03C15/02—Surface treatment of glass, not in the form of fibres or filaments, by etching for making a smooth surface
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P50/00—Etching of wafers, substrates or parts of devices
  • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
  • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
  • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
  • C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
  • C03B29/02—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a discontinuous way
  • C03B29/025—Glass sheets
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
  • Y02P40/00—Technologies relating to the processing of minerals
  • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
  • Y02P40/57—Improving the yield, e-g- reduction of reject rates

Definitions

• the present invention relates to a method for processing a quartz member for a plasma processing apparatus, a quartz member for a plasma processing apparatus, and a plasma processing apparatus equipped with the quartz member for a plasma processing apparatus, and in particular, particles generated by exposure to plasma.
• the present invention relates to a method for processing a quartz member for a plasma processing apparatus, which does not form a fractured layer that causes cracks, a quartz member for a plasma processing apparatus, and a plasma processing apparatus on which the quartz member for a plasma processing apparatus is mounted.
• an upper electrode and a lower electrode are disposed opposite to each other in a processing vessel, and a space between the opposing electrodes is provided.
• a plasma processing apparatus configured to introduce a processing gas, apply high-frequency power to the upper and lower electrodes to generate plasma, and process an object to be processed.
• insulating members are arranged around the upper and lower electrodes to increase the processing efficiency of the object to be processed, and the plasma is confined above the object to be processed. This insulation Quartz is generally used for the member.
• this quartz member when this quartz member is used in a processing vessel, it is inevitable that the etched material deposits on the surface, but if the deposited material comes off, there is a risk of contaminating the surface of the workpiece. . For this reason, the surface of the quartz member is finished by means of surface processing using abrasive grains, etc., so as to form irregularities for adsorption and retention of sediment.
• the surface is eroded when exposed to plasma, and the generated quartz becomes a mist in the processing vessel, causing particles to be generated such as adhering to the surface of the object to be processed. There is a problem that the yield of the processing body is reduced.
• FIG. 5 is a cross-sectional view schematically showing changes in the surface of a quartz member that has been subjected to conventional surface processing.
• diamond members processed by diamond grinding have been subjected to surface processing using, for example, abrasive grains with a grain size of # 360 to adsorb and retain sediments.
• Figure 5 (a) is a conceptual diagram showing the cross section of the quartz member before use in the plasma processing apparatus.
• microcracks 55 were generated on the surface 53 of the quartz member 51 by surface processing using abrasive grains, forming a crushed layer.
• the crushed layer on the surface is eroded in the early stage of use and becomes dust, which causes particles to be generated.
• FIG. 5 (b) when the material etched from the object adheres as the deposit 57, the deposit 57 also penetrates into the micro crack 55, and As shown in Fig. 5 (c), it swells when it is released to the atmosphere and generates cracks 59 caused by microcracks 55. Furthermore, as shown in Fig.
• the sediment 57 causes chipping 61 that peels off the surface of the quartz member 51, contaminating the surface of the workpiece and lowering the yield. There is a risk of causing.
• the present invention has been made in view of the above problems of a conventional method for processing a quartz member for a plasma processing apparatus, a quartz member for a plasma processing apparatus, and a plasma processing apparatus having the quartz member for a plasma processing apparatus mounted thereon.
• An object of the present invention is to provide a processing method, a quartz member for a plasma processing apparatus, and a plasma processing apparatus on which a quartz member for a plasma processing apparatus is mounted.
• a quartz member mounted on a plasma processing apparatus for performing a predetermined process on an object to be processed by plasma excited in a processing chamber and having an exposed surface exposed in the processing chamber.
• the exposed surface of the quartz member is made of abrasive grains of the first grain size.
• a method for processing a quartz member for a plasma processing apparatus wherein a wet etching process using an acid is performed after the surface processing. It is desirable that the exposed surface of the quartz member be wet-etched with an acid after surface processing with abrasive grains.
• the exposed surface of the quartz member may be subjected to surface polishing by abrasive grains after processing by fire polishing, and furthermore may be a method of processing a quartz member for a plasma processing apparatus in which wet etching is performed by acid.
• a quartz member for a plasma processing apparatus which has been subjected to a surface treatment by any of the above methods, and a plasma processing apparatus on which the quartz member for the plasma processing apparatus is mounted are provided. According to this configuration, plasma processing can prevent the generation of particles at the initial stage, and can remove microcracks that cause chipping while maintaining minute irregularities that adsorb and retain sediment during use of the quartz member.
• FIG. 1 is a schematic sectional view showing a plasma processing apparatus according to one embodiment of the present invention.
• FIG. 2 is a view showing the shape of the quartz member according to the present invention.
• FIG. 3 shows a method for processing the surface of a quartz member according to the first embodiment.
• FIG. 4 is a cross-sectional view schematically showing a change in the surface due to this.
• Fig. 4 is a diagram showing the number of particles generated in a plasma processing apparatus for a quartz member surface-treated under various conditions. Fig.
• FIG. 5 is a cross-sectional view schematically showing changes in the surface of a quartz member that has been subjected to conventional surface processing.
• BEST MODE FOR CARRYING OUT THE INVENTION A method for processing a quartz member for a plasma processing apparatus, a quartz member for a plasma processing apparatus, and a quartz member for a plasma processing apparatus according to the present invention will be described below with reference to the accompanying drawings. A preferred embodiment of the mounted plasma processing apparatus will be described in detail. In this specification and the drawings, components having substantially the same function and configuration are denoted by the same reference numerals, and redundant description is omitted.
• FIG. 1 is a schematic sectional view showing a plasma processing apparatus according to one embodiment of the present invention
• FIG. 2 is a diagram showing a shape of a quartz member according to this embodiment.
• Fig. 2 (a) is a plan view of the focus ring 19
• Fig. 2 (b) is a cross-sectional view taken along line A-A of Fig. 2 (a)
• Fig. 2 (c) is a shield ring 2.
• the plan view of Fig. 5 and Fig. 2 (d) are cross-sectional views taken along line BB in Fig. 2 (c). As shown in Fig.
• this plasma processing apparatus is It has a processing vessel 1 formed in a cylindrical shape, and an upper electrode 2 and a lower electrode 3 disposed to face each other in the processing vessel 1.
• the openings 4 and 5 are provided in the side wall of the processing chamber 1 for, for example, loading and unloading the semiconductor wafer W.
• the gate valves 6 and 7 are provided outside the openings 4 and 5 to open and close the openings 4 and 5, respectively, and allow the processing container 1 to be airtight.
• the lower electrode 3 is provided on a lifting device 8 below the processing vessel 1.
• the elevating device 8 is composed of, for example, a hydraulic cylinder or a combination mechanism of a screw connection mechanism of a ball screw and a nut and a servo motor for rotating this mechanism, and serves to raise and lower the lower electrode 3.
• the bellows 9 is provided between the periphery of the elevating device 8 and the inner wall of the processing vessel 1 so that the plasma generated in the processing vessel 1 does not enter below the lower electrode 3.
• the lower electrode 3 is connected to a high-pass filter 10 that blocks the penetration of high-frequency components applied to the upper electrode 2.
• the high-pass filter 10 is connected to a high-frequency power supply 11 that supplies a voltage having a frequency of 800 kHz, for example.
• the electrostatic chuck 12 is provided on the upper surface of the lower electrode 3 for fixing the semiconductor wafer W.
• the electrostatic chuck 12 has a conductive sheet-like electrode plate 12a, and a polyimide layer 12b sandwiching the surface of the electrode plate 12a.
• the electrode plate 12a is electrically connected to a DC power source 13 that generates a coulomb for temporarily holding the semiconductor wafer W.
• An annular baffle plate 14 is provided between the periphery of the lower electrode 3 and the inner wall of the processing vessel 1.
• a large number of exhaust ports 15 are provided on the baffle plate 14 so that exhaust can be performed uniformly around the lower electrode 3.
• the exhaust pipe 16 is connected to the vacuum pump 17 and exhausts the processing gas in the processing vessel 1.
• the focus ring 18 is provided around the lower electrode 3, and spreads the plasma on the semiconductor wafer W outward from the semiconductor wafer W, so that the plasma is uniformly formed on the periphery of the semiconductor wafer W.
• the focus ring 18 is annular, and is made of, for example, silicon carbide (SiC).
• the focus ring 19 is provided on the outer periphery of the focus ring 18 so as to be uneven, and the plasma density is increased by confining the plasma above the semiconductor wafer W.
• the focus ring 19 is annular and made of quartz as shown in Fig. 2.
• the upper electrode 2 has a hollow structure and is provided above the processing vessel 1 so as to face the lower electrode 3.
• the gas supply pipe 21 is connected to the upper electrode 2 and supplies a predetermined processing gas into the processing vessel 1.
• a large number of gas diffusion holes 22 are formed in the lower portion of the upper electrode 2.
• a low-pass filter 23 is connected to the upper electrode 2 to prevent intrusion of high-frequency components applied to the lower electrode 3.
• the low-pass filter 23 is connected to the high-frequency power supply 24.
• High frequency power supply 24 is a high frequency power supply It has a higher frequency than 11, for example, 27.12 MHz.
• the shield ring 25 is made of an annular quartz as shown in FIG. 2, and is provided around the upper electrode 2 and serves to confine the plasma above the semiconductor wafer W.
• the shield ring 25 is fitted around the outer periphery of the upper electrode 2.
• a high-frequency voltage of, for example, 27.12 MHZ is applied from the high-frequency power supply 24 to the upper electrode 2, and after a predetermined time, for example, 1 second or less, is applied to the lower electrode 3 from the high-frequency power supply 11.
• a high-frequency voltage of 800 kHz is applied to generate plasma between both electrodes. Due to the generation of this plasma, the semiconductor wafer is firmly adsorbed and held on the electrostatic chuck 12.
• the above plasma is confined between the shield ring 25 around the upper electrode 2 and the focus ring 19 around the lower electrode 2, and has a high density.
• the semiconductor wafer W processing is performed with this high-density plasma.
• quartz members such as the shield ring 25 and the focus ring 19 are processed by diamond grinding, and the surface is then processed with abrasive grains with a grain size of # 320 to 400, for example, by blasting. And processed the surface so that sediments could be easily absorbed and retained.
• FIG. 3 is a cross-sectional view schematically showing changes in the surface of the quartz member 151 according to the first embodiment due to the surface processing method.
• the quartz member 15 1 is applied to either the shield ring 25 or the focus ring 19.
• Figure 3 (a) shows the surface when diamond grinding is performed. In this state, many cracks 155 are generated on the surface, and the sediment is hardly adsorbed and retained.
• FIG. 3 (b) shows the surface processing using abrasive grains of the same size as the conventional surface treatment method, for example, # 320-400 (second particle size), eg, blasting.
• FIG. In this state, the crack Since 155 is removed and the basic unevenness is maintained, sediment is easily absorbed and retained. However, microcracks remain on the surface, and a crushed layer 163 is formed. In the early stage of use, quartz is likely to become dust due to plasma erosion. In addition, when deposits enter the microcracks and swell due to the release of the deposits to the atmosphere, chipping that peels off the quartz surface may occur.
• Figure 3 (c) is a diagram showing the surface when surface processing (sanding) is further performed with abrasive grains of grain size # 500 (first grain size).
• the crushed layer 163 is removed while maintaining the basic unevenness for adsorbing sediment, and the generation of initial particles and chipping can be suppressed.
• the wet etching is performed, for example, by immersing in a 5 to 20 wt% hydrofluoric acid solution for 10 to 90 minutes, preferably in a 15 wt% hydrofluoric acid solution for 20 to 40 minutes.
• microcracks on the quartz member surface can be further reduced, and the yield of semiconductor wafer W processing can be improved.
• machining such as diamond grinding
• rough surface processing using abrasive grains (second grain size) with a grain size of # 320 to 400 is not performed.
• Surface treatment such as blasting or sand blasting with about 100%).
• the same effect as in the above-described method can be obtained even if the wet etching is performed by dipping for up to 90 minutes.
• the surface of the quartz member is surface-etched by a method of performing wet etching with an acid after the surface processing with the abrasive particles of the fine particle size (first particle size), and the adsorption and retention of the deposits are performed. While leaving the effect, it is possible to remove the fractured layer on the surface and to suppress the generation of particles and chipping in the early stage of use.
• fire polishing which is a heat treatment using a burner or the like.
• This is a method in which surface processing using fine abrasive grains (particle diameter), for example, blasting or sanding, is performed, and finally, wet etching is performed using an acid such as hydrofluoric acid (HF).
• HF hydrofluoric acid
• a surface treatment using abrasive grains having a grain size of # 320 to 400, for example, a blast treatment may be performed prior to the fire-polish treatment.
• the horizontal axis represents the processing time, and the vertical axis represents the number of generated particles.
• the processing in the plasma processing equipment was performed under two conditions: “Gas 0 n” just flowing the processing gas, and “RF on” where the power for plasma excitation was input.
• Fig. 4 (a) in Method 2, when the processing time is 10 hours, the number of generated particles exceeds the limit value of 40, which is considered to be practically acceptable. That is, particle generation in the early stage of use Not controlled.
• Fig. 4 (b) the number of particles generated within the processing time is below the limit. Therefore, of the above five processing methods, after fire polishing, surface processing is performed using abrasive grains with a small particle size (for example, particle size # 500).
• the particle size of the abrasive used for surface processing with the abrasive, or the concentration and time of hydrofluoric acid in hydrofluoric acid treatment are not limited to the above. It will be understood that a material having the same effect is within the scope of the present invention.
• the method for processing the surface of a quartz member according to the present invention is not limited to the focus ring and the shield ring, but may be a plasma processing apparatus. It can be applied to other members such as inner walls.
• the present invention As described above, according to the present invention, the generation of particles due to surface peeling in the early stage of use and the subsequent occurrence of chipping are suppressed, the contamination of the semiconductor wafer is prevented, and the plasma capable of performing high-yield and highly-reliable processing is provided.
• a method for processing a quartz member for a processing apparatus, a quartz member for a plasma processing apparatus, and a plasma processing apparatus having the quartz member for a plasma processing apparatus mounted thereon can be provided.
• INDUSTRIAL APPLICABILITY The present invention is applicable to a method for processing a quartz member for a plasma processing apparatus, a quartz member for a plasma processing apparatus, and a plasma processing apparatus equipped with the quartz member for a plasma processing apparatus.

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• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Materials Engineering (AREA)
• Organic Chemistry (AREA)
• Life Sciences & Earth Sciences (AREA)
• Chemical Kinetics & Catalysis (AREA)
• General Chemical & Material Sciences (AREA)
• Geochemistry & Mineralogy (AREA)
• Mechanical Engineering (AREA)
• Drying Of Semiconductors (AREA)
• Plasma Technology (AREA)

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• 2001
  • 2001-10-30 JP JP2001332462A patent/JP4034543B2/ja not_active Expired - Fee Related
• 2002
  • 2002-09-09 TW TW091120471A patent/TW556269B/zh not_active IP Right Cessation
  • 2002-09-12 US US10/490,105 patent/US20040200804A1/en not_active Abandoned
  • 2002-09-12 WO PCT/JP2002/009311 patent/WO2003028083A1/ja not_active Ceased
  • 2002-09-12 KR KR1020047004313A patent/KR100585436B1/ko not_active Expired - Fee Related
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