CN1293611C - 等离子体处理装置用石英部件及其加工方法、及安装有该石英部件的等离子体处理装置 - Google Patents

等离子体处理装置用石英部件及其加工方法、及安装有该石英部件的等离子体处理装置 Download PDF

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Publication number
CN1293611C
CN1293611C CNB028186265A CN02818626A CN1293611C CN 1293611 C CN1293611 C CN 1293611C CN B028186265 A CNB028186265 A CN B028186265A CN 02818626 A CN02818626 A CN 02818626A CN 1293611 C CN1293611 C CN 1293611C
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CN
China
Prior art keywords
plasma processing
plasma
quartz member
quartz
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB028186265A
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English (en)
Chinese (zh)
Other versions
CN1557018A (zh
Inventor
杉山智一
三枝秀仁
冈山信幸
饭室俊一
今福光祐
长山将之
三桥康至
中山博之
黄亚辉
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of CN1557018A publication Critical patent/CN1557018A/zh
Application granted granted Critical
Publication of CN1293611C publication Critical patent/CN1293611C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C03C15/02—Surface treatment of glass, not in the form of fibres or filaments, by etching for making a smooth surface
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
    • C03B29/02—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a discontinuous way
    • C03B29/025—Glass sheets
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CNB028186265A 2001-09-25 2002-09-12 等离子体处理装置用石英部件及其加工方法、及安装有该石英部件的等离子体处理装置 Expired - Fee Related CN1293611C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001292251 2001-09-25
JP292251/2001 2001-09-25
JP332462/2001 2001-10-30
JP2001332462A JP4034543B2 (ja) 2001-09-25 2001-10-30 プラズマ処理装置用石英部材の加工方法，プラズマ処理装置用石英部材およびプラズマ処理装置用石英部材が実装されたプラズマ処理装置

Publications (2)

Publication Number Publication Date
CN1557018A CN1557018A (zh) 2004-12-22
CN1293611C true CN1293611C (zh) 2007-01-03

Family

ID=26622843

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028186265A Expired - Fee Related CN1293611C (zh) 2001-09-25 2002-09-12 等离子体处理装置用石英部件及其加工方法、及安装有该石英部件的等离子体处理装置

Country Status (6)

Country Link
US (1) US20040200804A1 (https=)
JP (1) JP4034543B2 (https=)
KR (1) KR100585436B1 (https=)
CN (1) CN1293611C (https=)
TW (1) TW556269B (https=)
WO (1) WO2003028083A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4888392B2 (ja) * 2005-09-20 2012-02-29 コニカミノルタオプト株式会社 防眩性反射防止フィルムの形成方法及び防眩性反射防止フィルム
KR100997839B1 (ko) * 2006-01-31 2010-12-01 도쿄엘렉트론가부시키가이샤 마이크로파 플라즈마 처리 장치 및 천판
JP2008037498A (ja) * 2006-07-11 2008-02-21 Kirin Brewery Co Ltd プラスチックキャップ及びそれで密封された製品又は容器
CN101740335B (zh) * 2008-11-14 2011-05-04 中芯国际集成电路制造(北京)有限公司 半导体制造设备和半导体结构的刻蚀方法
US20120255635A1 (en) * 2011-04-11 2012-10-11 Applied Materials, Inc. Method and apparatus for refurbishing gas distribution plate surfaces
CN102807327B (zh) * 2011-06-03 2014-11-19 中芯国际集成电路制造(上海)有限公司 一种降低干刻蚀腔体喷嘴内壁的粗糙度的方法
KR102019817B1 (ko) * 2017-09-07 2019-09-09 주식회사 원익큐엔씨 쿼츠 표면 처리 방법
JP7503951B2 (ja) 2020-07-17 2024-06-21 東京エレクトロン株式会社 エッチング処理装置、石英部材及びプラズマ処理方法
US11401608B2 (en) * 2020-10-20 2022-08-02 Sky Tech Inc. Atomic layer deposition equipment and process method
CN114536158B (zh) * 2022-01-19 2023-03-31 宁波云德半导体材料有限公司 一种刻蚀机反应腔的石英窗的加工方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1154644A (zh) * 1995-12-15 1997-07-16 日本电气株式会社 等离子体工艺设备的腔体腐蚀
JP2000114353A (ja) * 1998-09-30 2000-04-21 Ibiden Co Ltd 半導体製造装置用部品
JP2000239032A (ja) * 1999-02-17 2000-09-05 Atokku:Kk 石英ガラス円筒体の内面研磨方法
JP2001089198A (ja) * 1999-09-22 2001-04-03 Asahi Glass Co Ltd 半導体装置用石英ガラス治具およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6368410B1 (en) * 1999-06-28 2002-04-09 General Electric Company Semiconductor processing article
US6887576B2 (en) * 2000-08-23 2005-05-03 Herseus Quarzglas GmbH & Co. KG Quartz glass body having improved resistance against plasma corrosion, and method for production thereof
US20040173313A1 (en) * 2003-03-03 2004-09-09 Bradley Beach Fire polished showerhead electrode

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1154644A (zh) * 1995-12-15 1997-07-16 日本电气株式会社 等离子体工艺设备的腔体腐蚀
JP2000114353A (ja) * 1998-09-30 2000-04-21 Ibiden Co Ltd 半導体製造装置用部品
JP2000239032A (ja) * 1999-02-17 2000-09-05 Atokku:Kk 石英ガラス円筒体の内面研磨方法
JP2001089198A (ja) * 1999-09-22 2001-04-03 Asahi Glass Co Ltd 半導体装置用石英ガラス治具およびその製造方法

Also Published As

Publication number Publication date
KR100585436B1 (ko) 2006-06-07
KR20040035884A (ko) 2004-04-29
WO2003028083A1 (fr) 2003-04-03
JP4034543B2 (ja) 2008-01-16
TW556269B (en) 2003-10-01
CN1557018A (zh) 2004-12-22
US20040200804A1 (en) 2004-10-14
JP2003174017A (ja) 2003-06-20

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