TW556269B - Method of processing quartz member for plasma processing device, quartz member for plasma processing device, and plasma processing device having quartz member for plasma processing device mounted thereon - Google Patents

Method of processing quartz member for plasma processing device, quartz member for plasma processing device, and plasma processing device having quartz member for plasma processing device mounted thereon Download PDF

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Publication number
TW556269B
TW556269B TW091120471A TW91120471A TW556269B TW 556269 B TW556269 B TW 556269B TW 091120471 A TW091120471 A TW 091120471A TW 91120471 A TW91120471 A TW 91120471A TW 556269 B TW556269 B TW 556269B
Authority
TW
Taiwan
Prior art keywords
plasma processing
quartz member
processing
quartz
plasma
Prior art date
Application number
TW091120471A
Other languages
English (en)
Chinese (zh)
Inventor
Norikazu Sugiyama
Hidehito Saegusa
Nobuyuki Okayama
Shinichi Iimuro
Kosuke Imafuku
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of TW556269B publication Critical patent/TW556269B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C03C15/02—Surface treatment of glass, not in the form of fibres or filaments, by etching for making a smooth surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
    • C03B29/02—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a discontinuous way
    • C03B29/025—Glass sheets
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW091120471A 2001-09-25 2002-09-09 Method of processing quartz member for plasma processing device, quartz member for plasma processing device, and plasma processing device having quartz member for plasma processing device mounted thereon TW556269B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001292251 2001-09-25
JP2001332462A JP4034543B2 (ja) 2001-09-25 2001-10-30 プラズマ処理装置用石英部材の加工方法，プラズマ処理装置用石英部材およびプラズマ処理装置用石英部材が実装されたプラズマ処理装置

Publications (1)

Publication Number Publication Date
TW556269B true TW556269B (en) 2003-10-01

Family

ID=26622843

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091120471A TW556269B (en) 2001-09-25 2002-09-09 Method of processing quartz member for plasma processing device, quartz member for plasma processing device, and plasma processing device having quartz member for plasma processing device mounted thereon

Country Status (6)

Country Link
US (1) US20040200804A1 (https=)
JP (1) JP4034543B2 (https=)
KR (1) KR100585436B1 (https=)
CN (1) CN1293611C (https=)
TW (1) TW556269B (https=)
WO (1) WO2003028083A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI700742B (zh) * 2017-09-07 2020-08-01 韓商圓益ＱｎＣ股份有限公司 用於塗敷石英表面的石英表面處理方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4888392B2 (ja) * 2005-09-20 2012-02-29 コニカミノルタオプト株式会社 防眩性反射防止フィルムの形成方法及び防眩性反射防止フィルム
KR100997839B1 (ko) * 2006-01-31 2010-12-01 도쿄엘렉트론가부시키가이샤 마이크로파 플라즈마 처리 장치 및 천판
JP2008037498A (ja) * 2006-07-11 2008-02-21 Kirin Brewery Co Ltd プラスチックキャップ及びそれで密封された製品又は容器
CN101740335B (zh) * 2008-11-14 2011-05-04 中芯国际集成电路制造(北京)有限公司 半导体制造设备和半导体结构的刻蚀方法
US20120255635A1 (en) * 2011-04-11 2012-10-11 Applied Materials, Inc. Method and apparatus for refurbishing gas distribution plate surfaces
CN102807327B (zh) * 2011-06-03 2014-11-19 中芯国际集成电路制造(上海)有限公司 一种降低干刻蚀腔体喷嘴内壁的粗糙度的方法
JP7503951B2 (ja) 2020-07-17 2024-06-21 東京エレクトロン株式会社 エッチング処理装置、石英部材及びプラズマ処理方法
US11401608B2 (en) * 2020-10-20 2022-08-02 Sky Tech Inc. Atomic layer deposition equipment and process method
CN114536158B (zh) * 2022-01-19 2023-03-31 宁波云德半导体材料有限公司 一种刻蚀机反应腔的石英窗的加工方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09167755A (ja) * 1995-12-15 1997-06-24 Nec Corp プラズマ酸化膜処理装置
JP2000114353A (ja) * 1998-09-30 2000-04-21 Ibiden Co Ltd 半導体製造装置用部品
JP4256516B2 (ja) * 1999-02-17 2009-04-22 株式会社アトック 石英ガラス円筒体の内面研磨方法
US6368410B1 (en) * 1999-06-28 2002-04-09 General Electric Company Semiconductor processing article
JP2001089198A (ja) * 1999-09-22 2001-04-03 Asahi Glass Co Ltd 半導体装置用石英ガラス治具およびその製造方法
US6887576B2 (en) * 2000-08-23 2005-05-03 Herseus Quarzglas GmbH & Co. KG Quartz glass body having improved resistance against plasma corrosion, and method for production thereof
US20040173313A1 (en) * 2003-03-03 2004-09-09 Bradley Beach Fire polished showerhead electrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI700742B (zh) * 2017-09-07 2020-08-01 韓商圓益ＱｎＣ股份有限公司 用於塗敷石英表面的石英表面處理方法

Also Published As

Publication number Publication date
KR100585436B1 (ko) 2006-06-07
KR20040035884A (ko) 2004-04-29
WO2003028083A1 (fr) 2003-04-03
JP4034543B2 (ja) 2008-01-16
CN1557018A (zh) 2004-12-22
US20040200804A1 (en) 2004-10-14
JP2003174017A (ja) 2003-06-20
CN1293611C (zh) 2007-01-03

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