WO2003021657A1 - Dispositif et procede de traitement de substrat - Google Patents

Dispositif et procede de traitement de substrat Download PDF

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Publication number
WO2003021657A1
WO2003021657A1 PCT/JP2002/008685 JP0208685W WO03021657A1 WO 2003021657 A1 WO2003021657 A1 WO 2003021657A1 JP 0208685 W JP0208685 W JP 0208685W WO 03021657 A1 WO03021657 A1 WO 03021657A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
substrate treating
temperature
regulating
treating device
Prior art date
Application number
PCT/JP2002/008685
Other languages
English (en)
French (fr)
Inventor
Takehiko Orii
Masaru Amai
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to JP2003525898A priority Critical patent/JP4083682B2/ja
Priority to US10/488,406 priority patent/US7416632B2/en
Priority to KR1020047001485A priority patent/KR100915645B1/ko
Publication of WO2003021657A1 publication Critical patent/WO2003021657A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
PCT/JP2002/008685 2001-09-03 2002-08-28 Dispositif et procede de traitement de substrat WO2003021657A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003525898A JP4083682B2 (ja) 2001-09-03 2002-08-28 基板処理装置及び基板処理方法
US10/488,406 US7416632B2 (en) 2001-09-03 2002-08-28 Substrate processing apparatus and substrate processing method
KR1020047001485A KR100915645B1 (ko) 2001-09-03 2002-08-28 기판 처리 장치 및 기판 처리 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001265648 2001-09-03
JP2001-265648 2001-09-03

Publications (1)

Publication Number Publication Date
WO2003021657A1 true WO2003021657A1 (fr) 2003-03-13

Family

ID=19092082

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/008685 WO2003021657A1 (fr) 2001-09-03 2002-08-28 Dispositif et procede de traitement de substrat

Country Status (5)

Country Link
US (2) US7416632B2 (ja)
JP (1) JP4083682B2 (ja)
KR (1) KR100915645B1 (ja)
CN (1) CN100367473C (ja)
WO (1) WO2003021657A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021157353A1 (ja) * 2020-02-03 2021-08-12 東京エレクトロン株式会社 基板処理方法および基板処理装置
WO2024105945A1 (ja) * 2022-11-15 2024-05-23 株式会社Sumco シリコンウェーハの洗浄方法、シリコンウェーハの製造方法、及びシリコンウェーハ

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100915645B1 (ko) * 2001-09-03 2009-09-04 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
US20060157095A1 (en) * 2005-01-19 2006-07-20 Pham Xuyen N Systems and methods for spinning semiconductor wafers
US7435692B2 (en) 2005-10-19 2008-10-14 Tokyo Electron Limited Gas jet reduction of iso-dense field thickness bias for gapfill process
JP4306721B2 (ja) * 2006-11-22 2009-08-05 コニカミノルタビジネステクノロジーズ株式会社 画像形成システム、画像形成装置、ジョブ管理方法及びジョブ管理プログラム
JP5122426B2 (ja) * 2008-12-08 2013-01-16 東京エレクトロン株式会社 液処理方法、液処理装置および記憶媒体
US9799537B2 (en) 2010-12-03 2017-10-24 Applied Materials, Inc. Processing assembly for semiconductor workpiece and methods of processing same
US8541309B2 (en) * 2010-12-03 2013-09-24 Applied Materials, Inc. Processing assembly for semiconductor workpiece and methods of processing same
US9805946B2 (en) * 2013-08-30 2017-10-31 Taiwan Semiconductor Manufacturing Company Limited Photoresist removal
US9490138B2 (en) 2013-12-10 2016-11-08 Tel Fsi, Inc. Method of substrate temperature control during high temperature wet processing
JP6383152B2 (ja) * 2014-01-10 2018-08-29 平田機工株式会社 移載方法、保持装置及び移載システム
JP6338904B2 (ja) * 2014-03-24 2018-06-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6770886B2 (ja) * 2016-12-28 2020-10-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
US11935766B2 (en) * 2018-03-06 2024-03-19 Tokyo Electron Limited Liquid processing apparatus and liquid processing method
JP7213624B2 (ja) * 2018-05-01 2023-01-27 東京エレクトロン株式会社 基板処理装置、基板処理システムおよび基板処理方法
JP7093693B2 (ja) * 2018-07-13 2022-06-30 東京エレクトロン株式会社 熱処理装置及び基板滑り検出方法
CN109411391A (zh) * 2018-09-29 2019-03-01 蚌埠市龙子湖区金力传感器厂 一种具有冷却功能的传感器单晶硅刻蚀装置
KR20200092530A (ko) * 2019-01-24 2020-08-04 삼성전자주식회사 포토레지스트 제거장치 및 이를 이용한 반도체 소자 제조방법
JP2023023230A (ja) * 2021-08-04 2023-02-16 株式会社荏原製作所 基板処理方法および基板処理装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163393A (ja) * 1992-11-25 1994-06-10 Toshiba Corp 半導体基板の現像方法及び現像装置
JPH0774140A (ja) * 1993-09-02 1995-03-17 Toshiba Corp 半導体装置の製造装置
JPH11307485A (ja) * 1998-04-21 1999-11-05 Super Silicon Kenkyusho:Kk 半導体ウエハ研磨方法、半導体ウエハ研磨装置、及び研磨ウエハ
US6096233A (en) * 1996-09-24 2000-08-01 Tokyo Electron Limited Method for wet etching of thin film
US6197150B1 (en) * 1998-12-29 2001-03-06 Samsung Electronics Co., Ltd. Apparatus for wafer treatment for the manufacture of semiconductor devices
JP2001085383A (ja) * 1999-09-13 2001-03-30 Shimada Phys & Chem Ind Co Ltd 基板処理装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6163393A (ja) * 1984-09-05 1986-04-01 Nippon Kokan Kk <Nkk> 棒部材の溶接方法
JP3326656B2 (ja) 1994-10-31 2002-09-24 ソニー株式会社 回転式半導体基板処理装置及び回転式半導体基板処理方法
JP3194037B2 (ja) 1996-09-24 2001-07-30 東京エレクトロン株式会社 枚葉回転処理方法及びその装置
JP4240424B2 (ja) * 1998-10-23 2009-03-18 エルジー ディスプレイ カンパニー リミテッド エッチング剤及びこれを用いた電子機器用基板の製造方法
JP2000334397A (ja) * 1999-05-31 2000-12-05 Kokusai Electric Co Ltd 板状試料の流体処理装置及び板状試料の流体処理方法
US6299697B1 (en) * 1999-08-25 2001-10-09 Shibaura Mechatronics Corporation Method and apparatus for processing substrate
US6467297B1 (en) * 2000-10-12 2002-10-22 Jetek, Inc. Wafer holder for rotating and translating wafers
TW471010B (en) * 2000-09-28 2002-01-01 Applied Materials Inc Wafer cleaning equipment
WO2003003428A2 (en) * 2000-12-08 2003-01-09 Deflex Llc Apparatus, process and method for mounting and treating a substrate
US6605176B2 (en) * 2001-07-13 2003-08-12 Taiwan Semiconductor Manufacturing Co., Ltd. Aperture for linear control of vacuum chamber pressure
KR100915645B1 (ko) * 2001-09-03 2009-09-04 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
US6702202B1 (en) * 2002-06-28 2004-03-09 Lam Research Corporation Method and apparatus for fluid delivery to a backside of a substrate
US7323058B2 (en) * 2004-01-26 2008-01-29 Applied Materials, Inc. Apparatus for electroless deposition of metals onto semiconductor substrates
US7827930B2 (en) * 2004-01-26 2010-11-09 Applied Materials, Inc. Apparatus for electroless deposition of metals onto semiconductor substrates

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163393A (ja) * 1992-11-25 1994-06-10 Toshiba Corp 半導体基板の現像方法及び現像装置
JPH0774140A (ja) * 1993-09-02 1995-03-17 Toshiba Corp 半導体装置の製造装置
US6096233A (en) * 1996-09-24 2000-08-01 Tokyo Electron Limited Method for wet etching of thin film
JPH11307485A (ja) * 1998-04-21 1999-11-05 Super Silicon Kenkyusho:Kk 半導体ウエハ研磨方法、半導体ウエハ研磨装置、及び研磨ウエハ
US6197150B1 (en) * 1998-12-29 2001-03-06 Samsung Electronics Co., Ltd. Apparatus for wafer treatment for the manufacture of semiconductor devices
JP2001085383A (ja) * 1999-09-13 2001-03-30 Shimada Phys & Chem Ind Co Ltd 基板処理装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021157353A1 (ja) * 2020-02-03 2021-08-12 東京エレクトロン株式会社 基板処理方法および基板処理装置
JPWO2021157353A1 (ja) * 2020-02-03 2021-08-12
JP7267470B2 (ja) 2020-02-03 2023-05-01 東京エレクトロン株式会社 基板処理方法および基板処理装置
WO2024105945A1 (ja) * 2022-11-15 2024-05-23 株式会社Sumco シリコンウェーハの洗浄方法、シリコンウェーハの製造方法、及びシリコンウェーハ

Also Published As

Publication number Publication date
CN1582489A (zh) 2005-02-16
JP4083682B2 (ja) 2008-04-30
US20060160368A1 (en) 2006-07-20
CN100367473C (zh) 2008-02-06
US7416632B2 (en) 2008-08-26
US7329616B2 (en) 2008-02-12
KR20040028964A (ko) 2004-04-03
JPWO2003021657A1 (ja) 2004-12-24
KR100915645B1 (ko) 2009-09-04
US20040253833A1 (en) 2004-12-16

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