WO2021157353A1 - 基板処理方法および基板処理装置 - Google Patents
基板処理方法および基板処理装置 Download PDFInfo
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- WO2021157353A1 WO2021157353A1 PCT/JP2021/001776 JP2021001776W WO2021157353A1 WO 2021157353 A1 WO2021157353 A1 WO 2021157353A1 JP 2021001776 W JP2021001776 W JP 2021001776W WO 2021157353 A1 WO2021157353 A1 WO 2021157353A1
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- substrate
- plating solution
- cooling gas
- lid
- heating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
- C23C18/1628—Specific elements or parts of the apparatus
- C23C18/163—Supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/168—Control of temperature, e.g. temperature of bath, substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
- C23C18/1628—Specific elements or parts of the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
- C23C18/1632—Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1676—Heating of the solution
Definitions
- This disclosure relates to a substrate processing method and a substrate processing apparatus.
- Patent Document 1 a technique for electroless plating a substrate such as a semiconductor wafer using a plating solution is known.
- the plating solution is placed on the upper surface of the substrate, the substrate is covered with a lid, and then the plating solution on the substrate is heated by using a heater provided on the lid, thereby forming the plating solution on the substrate.
- a technique for forming a plating film is disclosed.
- the present disclosure provides a technique that makes it easy to keep the temperature of the plating solution on the substrate constant.
- the substrate processing method includes a step of holding the substrate, a step of supplying a plating solution, a step of covering the substrate, a step of heating the plating solution, and a step of supplying a cooling gas.
- the substrate is held by using the holding portion for holding the substrate.
- the plating solution is supplied to the upper surface of the held substrate.
- the step of covering the substrate is to cover the substrate with a lid before or after the step of supplying the plating solution.
- the step of heating the plating solution the plating solution on the substrate is heated by using the heating portion provided on the lid while the substrate is covered with the lid.
- the cooling gas is supplied to the lower surface or the holding portion of the substrate from below the substrate.
- FIG. 1 is a diagram showing a configuration of a substrate processing apparatus according to an embodiment.
- FIG. 2 is a diagram showing a configuration of a plating processing unit according to an embodiment.
- FIG. 3 is a diagram showing a configuration of a cooling gas supply unit according to the embodiment.
- FIG. 4 is a flowchart showing a procedure of processing executed by the plating processing unit according to the embodiment.
- FIG. 5 is an explanatory diagram of the substrate holding process shown in FIG.
- FIG. 6 is an explanatory diagram of the plating solution filling process shown in FIG.
- FIG. 7 is an explanatory diagram of a process of covering the substrate shown in FIG. 4 with a lid.
- FIG. 8 is an explanatory diagram of the cooling process shown in FIG. FIG.
- FIG. 9 is a graph schematically showing the temperature change of the plating solution during the heat treatment.
- FIG. 10 is a diagram showing a configuration of a plating processing unit according to the first modification.
- FIG. 11 is a flowchart showing a procedure of processing executed by the plating processing unit according to the first modification.
- FIG. 12 is a diagram showing a configuration of a plating processing unit according to the second modification.
- FIG. 13 is a diagram schematically showing the positional relationship between the plurality of heating regions of the heater and the plurality of cooling gas nozzles.
- FIG. 1 is a diagram showing a configuration of a substrate processing apparatus according to an embodiment.
- the substrate processing device 1 includes a loading / unloading station 2 and a processing station 3.
- the loading / unloading station 2 and the processing station 3 are provided adjacent to each other.
- the loading / unloading station 2 includes a carrier mounting table 11 and a transport section 12.
- a plurality of substrates, in the embodiment, a plurality of carriers C for accommodating a semiconductor wafer (hereinafter referred to as a substrate W) in a horizontal state are mounted on the carrier mounting table 11.
- a plurality of load ports are arranged side by side on the carrier mounting table 11 so as to be adjacent to the transport unit 12, and one carrier C is mounted on each of the plurality of load ports.
- the transport unit 12 is provided adjacent to the carrier mounting table 11, and includes a substrate transport device 13 and a delivery unit 14 inside.
- the substrate transfer device 13 includes a wafer holding mechanism for holding the substrate W. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and swivel around the vertical axis, and transfers the substrate W between the carrier C and the delivery portion 14 by using the wafer holding mechanism. conduct.
- the processing station 3 is provided adjacent to the transport unit 12.
- the processing station 3 includes a transport unit 15 and a plurality of plating processing units 5.
- the plurality of plating processing units 5 are provided side by side on both sides of the transport unit 15. The configuration of the plating processing unit 5 will be described later.
- the transport unit 15 includes a substrate transport device 17 inside.
- the substrate transfer device 17 includes a wafer holding mechanism for holding the substrate W. Further, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and swivel around the vertical axis, and transfers the substrate W between the delivery unit 14 and the plating processing unit 5 by using the wafer holding mechanism. conduct.
- the substrate processing device 1 includes a control device 9.
- the control device 9 is, for example, a computer, and includes a control unit 91 and a storage unit 92.
- the storage unit 92 stores programs that control various processes executed by the substrate processing device 1.
- the control unit 91 controls the operation of the substrate processing device 1 by reading and executing the program stored in the storage unit 92.
- Such a program may be recorded on a storage medium readable by a computer, and may be installed from the storage medium in the storage unit 92 of the control device 9.
- Examples of storage media that can be read by a computer include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.
- the board transfer device 13 of the loading / unloading station 2 takes out the board W from the carrier C mounted on the carrier mounting table 11, and delivers the taken out board W to the delivery unit. Place on 14.
- the substrate W placed on the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 17 of the processing station 3, transported to the plating processing unit 5, and processed by the plating processing unit 5.
- recesses such as trenches and vias are formed on the surface of the substrate W, and the plating processing unit 5 embeds metal in the recesses by an electroless plating method.
- the substrate W processed by the plating processing unit 5 is carried out from the plating processing unit 5 by the substrate transfer device 17 and placed on the delivery unit 14. Then, the processed substrate W mounted on the delivery unit 14 is returned to the carrier C of the carrier mounting table 11 by the substrate transport device 13.
- FIG. 2 is a diagram showing the configuration of the plating processing unit 5 according to the embodiment.
- the plating processing unit 5 is configured to perform a liquid treatment including an electroless plating treatment.
- the plating processing unit 5 is arranged on the chamber 51, the substrate holding portion 52 which is arranged in the chamber 51 and holds the substrate W horizontally, and the plating solution L1 (upper surface) of the substrate W held by the substrate holding portion 52. It is provided with a plating solution supply unit 53 that supplies a processing solution).
- the substrate holding portion 52 has a chuck member 521 that vacuum-adsorbs the lower surface (back surface) of the substrate W.
- the chuck member 521 is a so-called vacuum chuck type.
- a rotary motor 523 (rotation drive section) is connected to the board holding section 52 via a rotary shaft 522.
- the rotary motor 523 is driven, the substrate holding portion 52 rotates together with the substrate W.
- the rotary motor 523 is supported by a base 524 fixed to the chamber 51.
- a heating source such as a heater is not provided inside the substrate holding portion 52.
- the plating solution supply unit 53 includes a plating solution nozzle 531 that discharges (supplys) the plating solution L1 to the substrate W held by the substrate holding unit 52, and a plating solution supply source 532 that supplies the plating solution L1 to the plating solution nozzle 531. ,have.
- the plating solution supply source 532 is configured to supply the plating solution L1 heated or temperature-controlled to a predetermined temperature to the plating solution nozzle 531 via the plating solution pipe 533.
- the temperature at the time of discharging the plating solution L1 from the plating solution nozzle 531 is, for example, 55 ° C. or higher and 75 ° C. or lower, and more preferably 60 ° C. or higher and 70 ° C. or lower.
- the plating solution nozzle 531 is held by the nozzle arm 56 and is configured to be movable.
- the plating solution L1 is a plating solution for autocatalytic (reduction type) electroless plating.
- the plating solution L1 contains, for example, a metal ion and a reducing agent.
- the metal ions contained in the plating solution L1 include, for example, cobalt (Co) ion, nickel (Ni) ion, tungsten (W) ion, copper (Cu) ion, palladium (Pd) ion, gold (Au) ion, and ruthenium ( Ru) Ions and the like.
- the reducing agent contained in the plating solution L1 is hypophosphorous acid, dimethylamine borane, glyoxylic acid and the like.
- Examples of the plating film formed by the plating treatment using the plating solution L1 include CoWB, CoB, CoWP, CoWBP, NiWB, NiB, NiWP, NiWBP, Cu, Pd, Ru and the like.
- the plating film may be formed from a single layer or may be formed over two or more layers. When the plating film has a two-layer structure, it may have a layer structure such as CoWB / CoB and Pd / CoB in order from the base metal layer (seed layer) side.
- the plating processing unit 5 includes a cleaning liquid supply unit 54 that supplies the cleaning liquid L2 to the surface of the substrate W held by the substrate holding unit 52, and a rinse liquid supply unit 55 that supplies the rinse liquid L3 to the surface of the substrate W. Further prepared.
- the cleaning liquid supply unit 54 supplies the cleaning liquid L2 to the rotating substrate W held by the substrate holding unit 52, and precleans the seed layer formed on the substrate W.
- the cleaning liquid supply unit 54 has a cleaning liquid nozzle 541 that discharges the cleaning liquid L2 to the substrate W held by the substrate holding unit 52, and a cleaning liquid supply source 542 that supplies the cleaning liquid L2 to the cleaning liquid nozzle 541. ..
- the cleaning liquid supply source 542 is configured to supply the cleaning liquid L2 heated or temperature-controlled to a predetermined temperature to the cleaning liquid nozzle 541 via the cleaning liquid pipe 543 as described later.
- the cleaning liquid nozzle 541 is held by the nozzle arm 56 and can move together with the plating liquid nozzle 531.
- a dicarboxylic acid or a tricarboxylic acid is used as the cleaning liquid L2.
- the dicarboxylic acid for example, organic acids such as malic acid, succinic acid, malonic acid, oxalic acid, glutaric acid, adipic acid, and tartaric acid can be used.
- the tricarboxylic acid an organic acid such as citric acid can be used.
- the rinse liquid supply unit 55 includes a rinse liquid nozzle 551 that discharges the rinse liquid L3 to the substrate W held by the substrate holding unit 52, and a rinse liquid supply source 552 that supplies the rinse liquid L3 to the rinse liquid nozzle 551. is doing.
- the rinse liquid nozzle 551 is held by the nozzle arm 56 and can move together with the plating liquid nozzle 531 and the cleaning liquid nozzle 541.
- the rinse liquid supply source 552 is configured to supply the rinse liquid L3 to the rinse liquid nozzle 551 via the rinse liquid pipe 553.
- the rinse liquid L3 for example, DIW or the like can be used.
- a nozzle moving mechanism (not shown) is connected to the nozzle arm 56 that holds the plating liquid nozzle 531, the cleaning liquid nozzle 541, and the rinse liquid nozzle 551 described above.
- This nozzle moving mechanism moves the nozzle arm 56 in the horizontal direction and the vertical direction. More specifically, the nozzle arm 56 uses the nozzle moving mechanism to move the nozzle arm 56 between a discharge position for discharging the treatment liquid (plating liquid L1, cleaning liquid L2 or rinse liquid L3) to the substrate W and a retracted position retracted from the discharge position. It is possible to move with.
- the discharge position is not particularly limited as long as the processing liquid can be supplied to an arbitrary position on the surface of the substrate W.
- the center of the substrate W at a position where the processing liquid can be supplied.
- the ejection position of the nozzle arm 56 may be different depending on whether the plating liquid L1 is supplied to the substrate W, the cleaning liquid L2 is supplied, or the rinse liquid L3 is supplied.
- the retracted position is a position in the chamber 51 that does not overlap the substrate W when viewed from above, and is a position away from the discharge position. When the nozzle arm 56 is positioned in the retracted position, it is possible to prevent the moving lid 6 from interfering with the nozzle arm 56.
- a cup 571 is provided around the substrate holding portion 52.
- the cup 571 is formed in a ring shape when viewed from above, and when the substrate W rotates, it receives the processing liquid scattered from the substrate W and guides it to the drain duct 581.
- An atmosphere blocking cover 572 is provided on the outer peripheral side of the cup 571 to prevent the atmosphere around the substrate W from diffusing into the chamber 51.
- the atmosphere blocking cover 572 is formed in a cylindrical shape so as to extend in the vertical direction, and the upper end is open. A lid 6 to be described later can be inserted into the atmosphere blocking cover 572 from above.
- the substrate W held by the substrate holding portion 52 is covered with the lid body 6.
- the lid 6 has a ceiling portion 61 and a side wall portion 62 extending downward from the ceiling portion 61.
- the ceiling portion 61 includes a first ceiling plate 611 and a second ceiling plate 612 provided on the first ceiling plate 611.
- a heater 63 (heating unit) is interposed between the first ceiling plate 611 and the second ceiling plate 612.
- the first ceiling plate 611 and the second ceiling plate 612 are configured to seal the heater 63 so that the heater 63 does not come into contact with a treatment liquid such as the plating liquid L1.
- a seal ring 613 is provided on the outer peripheral side of the heater 63, and the heater 63 is sealed by the seal ring 613.
- the first ceiling plate 611 and the second ceiling plate 612 are preferably corrosive to a treatment liquid such as the plating liquid L1, and may be formed of, for example, an aluminum alloy.
- the first ceiling plate 611, the second ceiling plate 612 and the side wall portion 62 may be coated with Teflon (registered trademark).
- a lid moving mechanism 7 is connected to the lid 6 via a lid arm 71.
- the lid body moving mechanism 7 moves the lid body 6 in the horizontal direction and the vertical direction. More specifically, the lid body moving mechanism 7 has a swivel motor 72 that moves the lid body 6 in the horizontal direction, and a cylinder 73 (interval adjusting unit) that moves the lid body 6 in the vertical direction. ..
- the swivel motor 72 is mounted on a support plate 74 provided so as to be movable in the vertical direction with respect to the cylinder 73.
- an actuator (not shown) including a motor and a ball screw may be used.
- the swivel motor 72 of the lid moving mechanism 7 moves the lid 6 between an upper position arranged above the substrate W held by the substrate holding portion 52 and a retracted position retracted from the upper position.
- the upper position is a position facing the substrate W held by the substrate holding portion 52 at a relatively large interval, and is a position overlapping the substrate W when viewed from above.
- the retracted position is a position in the chamber 51 that does not overlap the substrate W when viewed from above.
- the moving nozzle arm 56 is prevented from interfering with the lid 6.
- the rotation axis of the swivel motor 72 extends in the vertical direction, and the lid 6 can swivel and move in the horizontal direction between the upper position and the retracted position.
- the cylinder 73 of the lid moving mechanism 7 moves the lid 6 in the vertical direction to adjust the distance between the substrate W to which the plating solution L1 is supplied and the first ceiling plate 611 of the ceiling portion 61. More specifically, the cylinder 73 positions the lid 6 at a lower position (a position shown by a solid line in FIG. 2) and an upper position (a position shown by a two-dot chain line in FIG. 2).
- the heater 63 when the heater 63 is driven and the lid 6 is positioned at the lower position described above, the substrate holding portion 52 or the plating solution L1 on the substrate W is heated.
- the ceiling portion 61 and the side wall portion 62 of the lid body 6 are covered with the lid body cover 64.
- the lid cover 64 is placed on the second ceiling plate 612 of the lid 6 via a support portion 65. That is, a plurality of support portions 65 projecting upward from the upper surface of the second ceiling plate 612 are provided on the second ceiling plate 612, and the lid cover 64 is placed on the support portions 65.
- the lid cover 64 can be moved in the horizontal direction and the vertical direction together with the lid 6.
- the lid cover 64 preferably has higher heat insulating properties than the ceiling portion 61 and the side wall portion 62 in order to prevent heat in the lid body 6 from escaping to the surroundings.
- the lid cover 64 is preferably made of a resin material, and it is even more preferable that the resin material has heat resistance.
- the lid body 6 provided with the heater 63 and the cover body cover 64 are integrally provided, and the cover unit 10 that covers the substrate holding portion 52 or the substrate W when arranged at a lower position is provided. It is composed of these a lid 6 and a lid cover 64.
- a fan filter unit 59 (gas supply unit) that supplies clean air (gas) around the lid 6 is provided above the chamber 51.
- the fan filter unit 59 supplies air into the chamber 51 (particularly, inside the atmosphere blocking cover 572), and the supplied air flows toward the exhaust pipe 81.
- a downflow through which this air flows downward is formed around the lid 6, and the gas vaporized from the treatment liquid such as the plating liquid L1 flows toward the exhaust pipe 81 by this downflow. In this way, the vaporized gas from the treatment liquid is prevented from rising and diffusing into the chamber 51.
- the gas supplied from the fan filter unit 59 described above is discharged by the exhaust mechanism 8.
- the plating processing unit 5 further includes a cooling gas supply unit that supplies cooling gas to the lower surface of the substrate W or the chuck member 521.
- the configuration of the cooling gas supply unit will be described with reference to FIG.
- FIG. 3 is a diagram showing a configuration of a cooling gas supply unit according to the embodiment.
- the cooling gas supply unit 4 has a cooling gas nozzle 41 for discharging the cooling gas and a cooling gas supply source 42 for supplying the cooling gas to the cooling gas nozzle 41.
- the cooling gas supply source 42 supplies the cooling gas at room temperature (not temperature-controlled) to the cooling gas nozzle 41 via the cooling gas pipe 43.
- the cooling gas for example, an inert gas such as nitrogen or argon is used.
- the cooling gas nozzle 41 is arranged below the substrate W held by the chuck member 521, and discharges the cooling gas toward the lower surface of the substrate W.
- the cooling gas nozzle 41 discharges the cooling gas outward in the radial direction of the substrate W.
- the cooling gas can be efficiently supplied to the entire lower surface of the substrate W.
- the cooling gas nozzle 41 may discharge the cooling gas vertically upward. Further, the cooling gas nozzle 41 may discharge the cooling gas to the chuck member 521.
- FIG. 4 is a flowchart showing a procedure of processing executed by the plating processing unit 5 according to the embodiment.
- FIG. 5 is an explanatory diagram of the substrate holding process shown in FIG. 4
- FIG. 6 is an explanatory diagram of the plating solution filling process shown in FIG.
- FIG. 7 is an explanatory view of a process of covering the substrate W shown in FIG. 4 with a lid 6, and
- FIG. 8 is an explanatory view of a cooling process shown in FIG.
- the series of processes shown in FIG. 4 is executed according to the control by the control unit 91.
- the substrate W carried into the plating processing unit 5 is held by the substrate holding unit 52 (step S101).
- the central portion of the lower surface of the substrate W is vacuum-sucked, and the substrate W is horizontally held by the substrate holding portion 52 (see FIG. 5).
- step S102 the substrate W held by the substrate holding portion 52 is cleaned (step S102).
- the rotation motor 523 is driven to rotate the substrate W at a predetermined rotation speed.
- the nozzle arm 56 positioned at the retracted position moves to the discharge position above the center of the substrate W.
- the cleaning liquid L2 is supplied from the cleaning liquid nozzle 541 to the rotating substrate W to clean the surface of the substrate W. As a result, deposits and the like adhering to the substrate W are removed from the substrate W.
- the cleaning liquid L2 supplied to the substrate W is discharged to the drain duct 581.
- the cleaned substrate W is rinsed (step S103).
- the rinsing liquid L3 is supplied from the rinsing liquid nozzle 551 to the rotating substrate W, and the surface of the substrate W is rinsed. As a result, the cleaning liquid L2 remaining on the substrate W is washed away.
- the rinse liquid L3 supplied to the substrate W is discharged to the drain duct 581.
- the plating solution L1 is supplied and served on the rinsed substrate W (step S104).
- the rotation speed of the substrate W is reduced to be lower than the rotation speed during the rinsing process.
- the rotation speed of the substrate W may be 50 to 150 rpm.
- the plating film formed on the substrate W can be made uniform.
- the rotation of the substrate W may be stopped.
- the plating solution L1 is discharged from the plating solution nozzle 531 to the surface of the substrate W.
- the discharged plating solution L1 stays on the surface of the substrate W due to surface tension, and the plating solution L1 is placed on the surface of the substrate W to form a layer (so-called paddle) of the plating solution L1 (see FIG. 6).
- a part of the plating solution L1 flows out from the surface of the substrate W and is discharged from the drain duct 581.
- the discharge of the plating solution L1 is stopped.
- the nozzle arm 56 which has been positioned at the discharge position, is positioned at the retracted position.
- the plating solution L1 placed on the substrate W is heated.
- the substrate W is covered with the lid 6 (step S105).
- the swivel motor 72 of the lid moving mechanism 7 is driven, and the lid 6 swivels in the horizontal direction and is positioned at an upper position (the position indicated by the alternate long and short dash line in FIG. 2).
- the cylinder 73 of the lid moving mechanism 7 is driven, and the lid 6 positioned at the upper position is lowered and positioned at the processing position.
- the distance between the plating solution L1 on the substrate W and the first ceiling plate 611 of the lid 6 becomes the first interval, and the side wall portion 62 of the lid 6 is arranged on the outer peripheral side of the substrate W.
- the lower end of the side wall portion 62 of the lid 6 is positioned at a position lower than the lower surface of the substrate W. In this way, the substrate W is covered with the lid 6, and the space around the substrate W is closed (see FIG. 7).
- the heat treatment is started (step S106). Specifically, the heater 63 is turned on to heat the plating solution L1 placed on the substrate W.
- the set temperature of the heater 63 is fixed to a constant target temperature through the heat treatment.
- the target temperature is, for example, 90 ° C. or higher and 100 ° C. or lower.
- the control unit 91 determines whether or not the temperature of the plating solution L1 on the substrate W has reached the target temperature (step S107). This determination is made, for example, based on the elapsed time from the start of the heat treatment in step S106. That is, the control unit 91 determines that the temperature of the plating solution L1 has reached the target temperature when a preset time has elapsed since the heat treatment was started. The control unit 91 repeats the determination in step S107 until a preset time elapses (steps S107, No).
- step S107 when it is determined that the temperature of the plating solution L1 has reached the target temperature (steps S107, Yes), the cooling process is started (step S108). Specifically, the supply of the cooling gas from the cooling gas supply unit 4 to the lower surface of the substrate W is started (see FIG. 8).
- FIG. 9 is a graph schematically showing the temperature change of the plating solution L1 during the heat treatment.
- the temperature change of the plating solution L1 when the cooling treatment is not performed is shown by a alternate long and short dash line.
- reference numeral T0 is the temperature of the plating solution L1 at the start of the heat treatment (for example, the temperature equal to or lower than the temperature of the plating solution L1 supplied from the plating solution supply unit 53).
- reference numeral T1 is a target temperature of the plating solution L1.
- the heater 63 may have a plurality of heating regions in which the temperature can be individually set in order to improve the temperature uniformity of the plating solution L1 in the plane of the substrate W (this point will be described later). In such a case, the set temperature of the heater 63 is adjusted for each heating region so that the in-plane uniformity of the temperature of the plating solution L1 is enhanced. Therefore, in such a case, if the set temperature is dynamically changed during the heat treatment, the in-plane uniformity of the temperature of the plating solution L1 may be rather lowered.
- the plating processing unit 5 supplies a cooling gas to the lower surface of the substrate W when the temperature of the plating solution L1 reaches the target temperature T1, so that the temperature of the plating solution L1 exceeds the target temperature T1. It was decided to suppress the rise. Therefore, the plating processing unit 5 according to the embodiment can keep the temperature of the plating solution L1 on the substrate W constant even when the heat treatment is performed by fixing the set temperature of the heater 63 to the target temperature. It's easy.
- step S109 the heat treatment and the cooling treatment are completed (step S109). Specifically, the heater 63 is turned off, and the supply of the cooling gas from the cooling gas supply unit 4 to the lower surface of the substrate W is stopped.
- the lid retracting process is performed (step S110).
- the lid moving mechanism 7 is driven to position the lid 6 in the retracted position.
- the cylinder 73 of the lid moving mechanism 7 is driven to raise the lid 6 and position it in the upper position.
- the swivel motor 72 of the lid moving mechanism 7 is driven, and the lid 6 positioned at the upper position swivels in the horizontal direction and is positioned at the retracted position.
- the substrate W is rinsed (step S111).
- the rotation speed of the substrate W is increased more than the rotation speed at the time of the plating process.
- the substrate W is rotated at the same rotation speed as the rinsing process (step S103) before the plating process.
- the rinse liquid nozzle 551 which was positioned at the retracted position, moves to the discharge position.
- the rinse liquid L3 is supplied from the rinse liquid nozzle 551 to the rotating substrate W to clean the surface of the substrate W.
- the plating solution L1 remaining on the substrate W is washed away.
- the rinsed substrate W is dried (step S112).
- the rotation speed of the substrate W is increased to be higher than the rotation speed of the rinsing process (step S111) to rotate the substrate W at high speed.
- the rinse liquid L3 remaining on the substrate W is shaken off and the substrate W dries.
- the substrate W is taken out from the plating processing section 5 by the substrate transport device 17 and transported to the delivery section 14. Further, the substrate W conveyed to the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 13 and accommodated in the carrier C. As a result, a series of electroless plating treatments on one substrate W are completed.
- FIG. 10 is a diagram showing a configuration of a plating processing unit according to the first modification.
- the plating processing section 5A according to the first modification has a configuration in which the lid body 6A and the plating solution nozzle 531A of the plating solution supply section 53A are integrated.
- the plating solution nozzle 531A is provided so as to penetrate the ceiling portion 61, the heater 63, and the lid body cover 64 of the lid body 6A.
- the plating solution nozzle 531A moves together with the lid body 6A by the lid body moving mechanism 7.
- the plating solution nozzle 531A is arranged above the center of the substrate W held by the substrate holding portion 52, but the plating solution nozzle 531A is located at a position deviated from the upper center of the substrate W. It may be arranged.
- FIG. 11 is a flowchart showing a procedure of processing executed by the plating processing unit according to the first modification.
- steps S201 to S212 are the processes other than steps S104 and S105 of the processes of steps S101 to S112 executed by the plating processing unit 5 according to the embodiment. It is the same. Specifically, the processing of steps S201 to S203 is the same as the processing of steps S101 to S103, and the processing of steps S206 to S212 is the same as the processing of steps S106 to S112.
- step S204 after the process of covering the substrate W with the lid 6A (step S204) is performed, the plating solution L1 is placed (step S205).
- the temperature drop of the plating solution L1 on the substrate W can be suppressed. That is, it is possible to suppress the temperature drop of the plating solution L1 that occurs between the time when the plating solution L1 is supplied to the substrate W and the time when the lid 6A is moved to cover the substrate W.
- the plating processing unit 5A may preheat the substrate W by turning on the heater 63 after covering the substrate W with the lid 6A in step S204 and before supplying the plating solution L1.
- the plating processing unit 5A has a lid body at a position where the first ceiling plate 611 of the lid body 6A comes into contact with the plating solution L1 placed on the substrate W in step S205. 6A may be arranged. As a result, in the subsequent heat treatment (steps S206 to S209), the heat of the heater 63 can be efficiently transferred to the plating solution L1. Therefore, the heating efficiency of the plating solution L1 can be increased.
- the plating processing unit 5A may perform a rinsing treatment (step S211) and a drying treatment (step S212) while covering the substrate W with the lid body 6A.
- the plating liquid L1 adhering to the first ceiling plate 611 of the lid body 6A can be washed away with the rinsing liquid L3, and the first ceiling plate 611 can be dried.
- the rinse liquid supply source 552 may be connected to the plating solution nozzle 531A via the rinse solution pipe 553.
- a drying gas supply source may be connected to the plating solution nozzle 531A via a pipe.
- the plating processing unit 5A supplies the drying gas (for example, an inert gas such as nitrogen) supplied from the drying gas supply source to the inside of the lid 6A to supply the substrate. W and the lid 6A can be dried.
- the drying gas for example, an inert gas such as nitrogen
- FIG. 12 is a diagram showing a configuration of a plating processing unit according to the second modification. Further, FIG. 13 is a diagram schematically showing the positional relationship between the plurality of heating regions of the heater and the plurality of cooling gas nozzles.
- the lid 6B included in the plating processing unit 5B according to the second modification includes a heater 63B.
- the heater 63B according to the second modification has a plurality of heating regions 631 to 633 whose temperature can be individually set.
- the plurality of heating regions 631 to 633 are arranged concentrically, for example (see FIG. 13).
- the plurality of heating regions 631 to 633 are arranged in the order of the heating region 631, the heating region 632, and the heating region 633 from the center of the substrate W to the outside.
- the heating region 631 has substantially the same diameter as, for example, the chuck member 521.
- the plating processing unit 5B according to the second modification includes a plurality of cooling gas supply units 4B1 to 4B3.
- the cooling gas supply units 4B1 to 4B3 have the same configuration as the cooling gas supply unit 4 described above, and include cooling gas nozzles 411 to 413, cooling gas supply sources 421 to 423, and cooling gas pipes 431 to 433, respectively.
- the plurality of cooling gas nozzles 411 may be connected to a single cooling gas nozzle.
- the cooling gas nozzles 411 to 413 are arranged at positions corresponding to a plurality of heating regions 631 to 633. Specifically, the cooling gas nozzle 411 is arranged below the heating region 631 and discharges the cooling gas from below toward the lower surface of the chuck member 521 located below the heating region 631. Further, the cooling gas nozzle 412 is arranged below the heating region 632, and discharges the cooling gas from below toward the lower surface of the substrate W located below the heating region 632. Further, the cooling gas nozzle 413 is arranged below the heating region 633, and discharges the cooling gas from below toward the lower surface of the substrate W located below the heating region 633.
- a plurality of cooling gas nozzles 411 to 413 may be provided for each heating region 631.
- cooling gas nozzles 411 to 413 discharge the cooling gas diagonally to the substrate W or the chuck member 521. May be good.
- the plating processing unit 5B may be provided with a plurality of cooling gas nozzles 411 to 413 corresponding to the plurality of heating regions 631 to 633 whose temperatures can be individually set. As a result, the plating processing unit 5B can further facilitate keeping the temperature of the plating solution L1 on the substrate W constant.
- the supply of the cooling gas is started when the temperature of the plating solution L1 reaches the target temperature, but the cooling gas is supplied before the temperature of the plating solution L1 reaches the target temperature. May be done.
- the supply of cooling gas may be started at the same time as the heat treatment.
- the flow rate (first flow rate) of the cooling gas in the heat treatment (first heat treatment) before the plating solution L1 reaches the target temperature T1 is the heat treatment (first flow rate) after the plating solution L1 reaches the target temperature T1. It shall be less than the flow rate of the cooling gas (second flow rate) in the second heat treatment).
- the cooling gas at room temperature is supplied, but the temperature of the cooling gas may be at least lower than the target temperature T1 and does not necessarily have to be room temperature. It is preferable to use the cooling gas at room temperature because, for example, a device for adjusting the temperature of the cooling gas is not required.
- the substrate processing method includes a step of holding the substrate (as an example, a substrate holding process), a step of supplying a plating solution (as an example, a plating solution filling process), and covering the substrate.
- the process includes a step (as an example, a process of covering the substrate with a lid), a step of heating the plating solution (as an example, a heat treatment), and a step of supplying a cooling gas (as an example, a cooling process).
- the substrate is held by using the holding portion (as an example, the substrate holding portion 52) that holds the substrate (as an example, the substrate W).
- the plating solution (for example, the plating solution L1) is supplied to the upper surface of the held substrate.
- the substrate is covered with a lid (for example, the lid 6) before or after the step of supplying the plating solution.
- the plating solution on the substrate is heated by using a heating portion (for example, a heater 63) provided on the lid body in a state where the substrate is covered with the lid body.
- the cooling gas for example, an inert gas
- the cooling gas when the temperature of the plating solution reaches the target temperature (for example, the target temperature T1), the cooling gas may be supplied to the lower surface or the holding portion of the substrate. As a result, it is possible to suppress an increase in the temperature of the plating solution that exceeds the target temperature. Therefore, for example, even when the heat treatment is performed by fixing the set temperature of the heating unit to the target temperature, it is easy to keep the temperature of the plating solution on the substrate constant.
- the target temperature for example, the target temperature T1
- the cooling gas may be supplied to the lower surface or the holding portion of the substrate.
- the target temperature is the set temperature of the heating unit.
- the temperature of the plating solution continues to rise for a while even after reaching the target temperature, which is the set temperature of the heating unit.
- cooling gas is supplied to the lower surface or the holding portion of the substrate to suppress the temperature rise of the plating solution exceeding the target temperature. can do.
- the temperature of the cooling gas is room temperature. This eliminates the need for equipment for adjusting the temperature of the cooling gas.
- the heating unit has a plurality of heating regions whose temperature can be individually set.
- the cooling gas may be supplied from a plurality of nozzles arranged at positions corresponding to the plurality of heating regions below the substrate. This makes it easier to keep the temperature of the plating solution on the substrate constant.
- the substrate processing apparatus (as an example, the plating processing unit 5) according to the embodiment includes a holding unit (as an example, a substrate holding unit 52), a plating solution supply unit (as an example, a plating solution supply unit 53), and a lid.
- a body (as an example, a lid 6), a moving mechanism (as an example, a lid moving mechanism 7), a heating unit (as an example, a heater 63), and a cooling gas supply unit (as an example, a cooling gas supply unit 4).
- a control unit (as an example, a control unit 91).
- the holding portion holds the substrate (as an example, the substrate W).
- the plating solution supply unit supplies a plating solution (for example, plating solution L1) to the upper surface of the substrate held by the holding unit.
- the lid covers the substrate held by the holding portion.
- the moving mechanism moves the lid.
- the heating portion is provided on the lid body.
- the cooling gas supply unit is arranged below the substrate held by the holding unit, and supplies the cooling gas (for example, an inert gas) to the lower surface of the substrate or the holding unit.
- the control unit uses a holding unit to hold the substrate (as an example, a substrate holding process) and a plating solution supply unit to supply a plating solution to the upper surface of the substrate (as an example, a plating solution filling process).
- the step of covering the substrate with the lid for example, the process of covering the substrate with the lid
- the heating part with the substrate covered with the lid for example, the heat treatment
- a control signal is output so that. Therefore, according to the substrate processing apparatus according to the embodiment, it is possible to easily keep the temperature of the plating solution on the substrate constant.
- Substrate processing device 4 Cooling gas supply unit 5: Plating processing unit 6: Lid body 7: Lid body moving mechanism 9: Control device 41: Cooling gas nozzle 42: Cooling gas supply source 43: Cooling gas pipe 52: Substrate holding unit 53: Plating liquid supply unit 63: Heater 91: Control unit 92: Storage unit 411 to 413: Cooling gas nozzles 421 to 423: Cooling gas supply source 431 to 433: Cooling gas pipe 521: Chuck member 531: Plating liquid nozzle 532: Plating Liquid supply source 533: Plating liquid piping 631 to 633: Heating region L1: Plating liquid L2: Cleaning liquid L3: Rinse liquid T1: Target temperature W: Substrate
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Abstract
Description
図1は、実施形態に係る基板処理装置の構成を示す図である。図1に示すように、基板処理装置1は、搬入出ステーション2と、処理ステーション3とを備える。搬入出ステーション2と処理ステーション3とは隣接して設けられる。
次に、めっき処理部の構成について図2を参照して説明する。図2は、実施形態に係るめっき処理部5の構成を示す図である。
実施形態に係るめっき処理部5は、さらに、基板Wの下面またはチャック部材521に対して冷却ガスを供給する冷却ガス供給部を備える。この冷却ガス供給部の構成について図3を参照して説明する。図3は、実施形態に係る冷却ガス供給部の構成を示す図である。
次に、上述しためっき処理部5の具体的動作について図4~図8を参照して説明する。図4は、実施形態に係るめっき処理部5が実行する処理の手順を示すフローチャートである。また、図5は、図4に示す基板保持処理の説明図であり、図6は、図4に示すめっき液盛り付け処理の説明図である。また、図7は、図4に示す基板Wを蓋体6で覆う処理の説明図であり、図8は、図4に示す冷却処理の説明図である。なお、図4に示す一連の処理は、制御部91による制御に従って実行される。
図10は、第1変形例に係るめっき処理部の構成を示す図である。図10に示すように、第1変形例に係るめっき処理部5Aは、蓋体6Aとめっき液供給部53Aのめっき液ノズル531Aとが一体化した構成を有する。
図12は、第2変形例に係るめっき処理部の構成を示す図である。また、図13は、ヒータが有する複数の加熱領域と複数の冷却ガスノズルとの位置関係を模式的に示した図である。
上述した実施形態では、めっき液L1の温度が目標温度に到達した場合に、冷却ガスの供給を開始することとしたが、冷却ガスは、めっき液L1の温度が目標温度に到達する前から供給されてもよい。たとえば、冷却ガスの供給は、加熱処理と同時に開始されてもよい。この場合、めっき液L1が目標温度T1に到達する前の加熱処理(第1加熱処理)における冷却ガスの流量(第1流量)は、めっき液L1が目標温度T1に到達した後の加熱処理(第2加熱処理)における冷却ガスの流量(第2流量)よりも少ないものとする。
4 :冷却ガス供給部
5 :めっき処理部
6 :蓋体
7 :蓋体移動機構
9 :制御装置
41 :冷却ガスノズル
42 :冷却ガス供給源
43 :冷却ガス配管
52 :基板保持部
53 :めっき液供給部
63 :ヒータ
91 :制御部
92 :記憶部
411~413:冷却ガスノズル
421~423:冷却ガス供給源
431~433:冷却ガス配管
521 :チャック部材
531 :めっき液ノズル
532 :めっき液供給源
533 :めっき液配管
631~633:加熱領域
L1 :めっき液
L2 :洗浄液
L3 :リンス液
T1 :目標温度
W :基板
Claims (6)
- 基板を保持する保持部を用いて前記基板を保持する工程と、
保持された前記基板の上面にめっき液を供給する工程と、
前記めっき液を供給する工程の前または後において、蓋体を用いて前記基板を覆う工程と、
前記蓋体で前記基板を覆った状態で、前記蓋体に設けられた加熱部を用いて前記基板上の前記めっき液を加熱する工程と、
前記めっき液を加熱する工程において、前記基板よりも下方から前記基板の下面または前記保持部に対して冷却ガスを供給する工程と
を含む、基板処理方法。 - 前記冷却ガスを供給する工程は、前記めっき液の温度が目標温度に達した場合に、前記基板の下面または前記保持部に対して前記冷却ガスを供給する、請求項1に記載の基板処理方法。
- 前記目標温度は、前記加熱部の設定温度である、請求項2に記載の基板処理方法。
- 前記冷却ガスの温度は、室温である、請求項1~3のいずれか一つに記載の基板処理方法。
- 前記加熱部は、個別に温度設定可能な複数の加熱領域を有し、
前記冷却ガスを供給する工程は、前記基板よりも下方において前記複数の加熱領域に対応する位置に配置された複数のノズルから前記冷却ガスを供給する、請求項1~4のいずれか一つに記載の基板処理方法。 - 基板を保持する保持部と、
前記保持部に保持された前記基板の上面にめっき液を供給するめっき液供給部と、
前記保持部に保持された前記基板を覆う蓋体と、
前記蓋体を移動させる移動機構と、
前記蓋体に設けられた加熱部と、
前記保持部に保持された前記基板よりも下方に配置され、前記基板の下面または前記保持部に対して冷却ガスを供給する冷却ガス供給部と、
前記保持部を用いて前記基板を保持するステップと、前記めっき液供給部を用いて前記基板の上面に前記めっき液を供給するステップと、前記めっき液を供給するステップの前または後において、前記蓋体を用いて前記基板を覆うステップと、前記蓋体で前記基板を覆った状態で、前記加熱部を用いて前記基板上の前記めっき液を加熱するステップと、前記めっき液を加熱するステップにおいて、前記基板の下面または前記保持部に対して前記冷却ガス供給部から前記冷却ガスを供給するステップとが行われるよう制御信号を出力する制御部と
を備える、基板処理装置。
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JP2002129344A (ja) * | 2000-10-26 | 2002-05-09 | Ebara Corp | 無電解めっき装置 |
WO2003021657A1 (fr) * | 2001-09-03 | 2003-03-13 | Tokyo Electron Limited | Dispositif et procede de traitement de substrat |
JP2005217164A (ja) * | 2004-01-29 | 2005-08-11 | Dainippon Screen Mfg Co Ltd | 基板処理方法及びその装置 |
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US6090261A (en) * | 1995-05-26 | 2000-07-18 | Formfactor, Inc. | Method and apparatus for controlling plating over a face of a substrate |
US9703859B2 (en) * | 2014-08-27 | 2017-07-11 | Facebook, Inc. | Keyword search queries on online social networks |
JP6736386B2 (ja) | 2016-07-01 | 2020-08-05 | 東京エレクトロン株式会社 | 基板液処理装置、基板液処理方法および記録媒体 |
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JP2002129344A (ja) * | 2000-10-26 | 2002-05-09 | Ebara Corp | 無電解めっき装置 |
WO2003021657A1 (fr) * | 2001-09-03 | 2003-03-13 | Tokyo Electron Limited | Dispositif et procede de traitement de substrat |
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