WO2003021352A1 - Reticule et procede de mesure de caracteristiques optiques - Google Patents

Reticule et procede de mesure de caracteristiques optiques Download PDF

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Publication number
WO2003021352A1
WO2003021352A1 PCT/JP2002/006995 JP0206995W WO03021352A1 WO 2003021352 A1 WO2003021352 A1 WO 2003021352A1 JP 0206995 W JP0206995 W JP 0206995W WO 03021352 A1 WO03021352 A1 WO 03021352A1
Authority
WO
WIPO (PCT)
Prior art keywords
reticle
test pattern
measuring method
optical characteristic
characteristic measuring
Prior art date
Application number
PCT/JP2002/006995
Other languages
English (en)
French (fr)
Inventor
Yoshihiro Shiode
Original Assignee
Canon Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kabushiki Kaisha filed Critical Canon Kabushiki Kaisha
Priority to KR1020047003072A priority Critical patent/KR100654784B1/ko
Priority to CNB028166698A priority patent/CN100350326C/zh
Priority to EP02745910.6A priority patent/EP1422562B1/en
Priority to JP2003525376A priority patent/JP4343685B2/ja
Priority to US10/307,981 priority patent/US7190443B2/en
Publication of WO2003021352A1 publication Critical patent/WO2003021352A1/ja
Priority to US11/123,139 priority patent/US7423740B2/en
Priority to US11/614,207 priority patent/US7375805B2/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0257—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
    • G01M11/0264—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested by using targets or reference patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
PCT/JP2002/006995 2001-08-31 2002-07-10 Reticule et procede de mesure de caracteristiques optiques WO2003021352A1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020047003072A KR100654784B1 (ko) 2001-08-31 2002-07-10 레티클과 광학특성의 측정방법
CNB028166698A CN100350326C (zh) 2001-08-31 2002-07-10 模板、投影曝光设备、器件制造方法及测量方法
EP02745910.6A EP1422562B1 (en) 2001-08-31 2002-07-10 Reticle and optical characteristic measuring method
JP2003525376A JP4343685B2 (ja) 2001-08-31 2002-07-10 レチクル及び光学特性計測方法
US10/307,981 US7190443B2 (en) 2001-08-31 2002-12-03 Reticle and optical characteristic measuring method
US11/123,139 US7423740B2 (en) 2001-08-31 2005-05-06 Reticle and optical characteristic measuring method
US11/614,207 US7375805B2 (en) 2001-08-31 2006-12-21 Reticle and optical characteristic measuring method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001-264581 2001-08-31
JP2001-264582 2001-08-31
JP2001264582 2001-08-31
JP2001264581 2001-08-31

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/307,981 Continuation US7190443B2 (en) 2001-08-31 2002-12-03 Reticle and optical characteristic measuring method

Publications (1)

Publication Number Publication Date
WO2003021352A1 true WO2003021352A1 (fr) 2003-03-13

Family

ID=26621470

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/006995 WO2003021352A1 (fr) 2001-08-31 2002-07-10 Reticule et procede de mesure de caracteristiques optiques

Country Status (7)

Country Link
US (3) US7190443B2 (ja)
EP (1) EP1422562B1 (ja)
JP (1) JP4343685B2 (ja)
KR (2) KR20060098404A (ja)
CN (1) CN100350326C (ja)
TW (1) TWI233655B (ja)
WO (1) WO2003021352A1 (ja)

Cited By (9)

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US7221434B2 (en) 2005-03-01 2007-05-22 Canon Kabushiki Kaisha Exposure method and apparatus
JP2007518256A (ja) * 2004-01-16 2007-07-05 カール ツァイス エスエムテー アクチェンゲゼルシャフト 光結像系の波面測定装置及び方法、及びマイクロリソグラフィ投影露光装置
US7382446B2 (en) 2004-04-06 2008-06-03 Canon Kabushiki Kaisha Aberration measuring method
JP2008244386A (ja) * 2007-03-29 2008-10-09 Canon Inc 収差計測方法、露光装置及びデバイス製造方法
JP2009302532A (ja) * 2008-06-02 2009-12-24 Asml Netherlands Bv リソグラフィ装置及びデバイス製造方法
JP2010109294A (ja) * 2008-10-31 2010-05-13 Canon Inc 測定装置、露光装置およびデバイス製造方法
JP2011176312A (ja) * 2010-02-25 2011-09-08 Nikon Corp 瞳透過率分布の測定方法および測定装置、露光方法および露光装置、並びにデバイス製造方法
US8248580B2 (en) 2008-05-01 2012-08-21 Canon Kabushiki Kaisha Scanning exposure apparatus and method of manufacturing device
JP2022184816A (ja) * 2021-05-31 2022-12-13 カール・ツァイス・エスエムティー・ゲーエムベーハー 測定される入射瞳内で照明光によって照明されたときの光学系の結像品質を決定するための方法

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JP3870153B2 (ja) * 2002-10-22 2007-01-17 キヤノン株式会社 光学特性の測定方法
KR101124179B1 (ko) 2003-04-09 2012-03-27 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
WO2005015313A1 (en) * 2003-08-04 2005-02-17 Carl Zeiss Smt Ag Illumination mask for range-resolved detection of scattered light
TWI474132B (zh) 2003-10-28 2015-02-21 尼康股份有限公司 照明光學裝置、投影曝光裝置、曝光方法以及元件製造方法
TWI612338B (zh) 2003-11-20 2018-01-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法、以及元件製造方法
JP2005175407A (ja) * 2003-12-15 2005-06-30 Canon Inc 計測方法及び装置、それを利用した露光方法及び装置、並びに、デバイス製造方法
TWI360837B (en) * 2004-02-06 2012-03-21 Nikon Corp Polarization changing device, optical illumination
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JP5622068B2 (ja) * 2005-11-15 2014-11-12 株式会社ニコン 面位置検出装置、露光装置、およびデバイスの製造方法
KR100738387B1 (ko) * 2005-12-28 2007-07-12 삼성전기주식회사 비축 조사에 의한 파면 측정장치
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WO2008153023A1 (ja) * 2007-06-11 2008-12-18 Nikon Corporation 計測部材、センサ、計測方法、露光装置、露光方法、及びデバイス製造方法
US7659989B2 (en) * 2007-06-29 2010-02-09 Coherent, Inc. Focus determination for laser-mask imaging systems
US7838178B2 (en) * 2007-08-13 2010-11-23 Micron Technology, Inc. Masks for microlithography and methods of making and using such masks
JP2009088246A (ja) * 2007-09-28 2009-04-23 Canon Inc 露光装置およびデバイス製造方法
JP2009200259A (ja) * 2008-02-21 2009-09-03 Canon Inc 測定方法及び測定用レチクル
JP2009277711A (ja) * 2008-05-12 2009-11-26 Canon Inc 露光装置、補正方法及びデバイス製造方法
US20110037962A1 (en) * 2009-08-17 2011-02-17 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
US8988653B2 (en) 2009-08-20 2015-03-24 Asml Netherlands B.V. Lithographic apparatus, distortion determining method, and patterning device
DE102009060843A1 (de) * 2009-12-29 2011-06-30 Prüftechnik Dieter Busch AG, 85737 Korrektur von Abbildungsfehlern bei Ausrichtsystemen mit mehreren im Strahlengang hintereinander angeordneten Messebenen
SG173233A1 (en) * 2010-01-28 2011-08-29 Visionxtreme Pte Ltd Inspection of defects in a contact lens
JP5574749B2 (ja) 2010-02-24 2014-08-20 キヤノン株式会社 露光条件及びマスクパターンのうち少なくとも一方を決定する決定方法及びプログラム、情報処理装置
US20110205519A1 (en) * 2010-02-25 2011-08-25 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
NL2008957A (en) * 2011-07-08 2013-01-09 Asml Netherlands Bv Methods and systems for pattern design with tailored response to wavefront aberration.
CN103091993B (zh) * 2011-11-02 2015-02-11 上海微电子装备有限公司 用于光刻机透镜热效应测量的测试标记及其测量方法
CN104335021B (zh) 2012-05-30 2020-04-07 株式会社尼康 波前测量方法及装置、以及曝光方法及装置
DE102012011315B4 (de) 2012-06-04 2018-12-27 Carl Zeiss Ag Mikroskop und Verfahren zur Charakterisierung von Strukturen auf einem Objekt
US9411223B2 (en) * 2012-09-10 2016-08-09 Globalfoundries Inc. On-product focus offset metrology for use in semiconductor chip manufacturing
US9442384B2 (en) * 2013-03-13 2016-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet lithography process and mask
CN105051611B (zh) * 2013-03-14 2017-04-12 Asml荷兰有限公司 图案形成装置、在衬底上生成标记的方法以及器件制造方法
US9411249B2 (en) 2013-09-23 2016-08-09 Globalfoundries Inc. Differential dose and focus monitor
DE102014112648A1 (de) * 2014-08-29 2016-03-03 Carl Zeiss Ag Bildaufnahmevorrichtung und Verfahren zur Bildaufnahme
US10483214B2 (en) * 2018-01-03 2019-11-19 Globalfoundries Inc. Overlay structures
DE102018202635B4 (de) * 2018-02-21 2019-11-21 Carl Zeiss Smt Gmbh Verfahren zur Bestimmung eines Abbildungsfehlerbeitrags einer abbildenden Optik zur Vermessung von Lithografie-Masken
CN109186959B (zh) * 2018-09-28 2020-02-07 歌尔股份有限公司 Vr光学模组的场曲的检测方法、装置及设备
JP2023003153A (ja) * 2021-06-23 2023-01-11 キヤノン株式会社 露光装置、露光方法および物品の製造方法

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007518256A (ja) * 2004-01-16 2007-07-05 カール ツァイス エスエムテー アクチェンゲゼルシャフト 光結像系の波面測定装置及び方法、及びマイクロリソグラフィ投影露光装置
US7382446B2 (en) 2004-04-06 2008-06-03 Canon Kabushiki Kaisha Aberration measuring method
US7221434B2 (en) 2005-03-01 2007-05-22 Canon Kabushiki Kaisha Exposure method and apparatus
JP2008244386A (ja) * 2007-03-29 2008-10-09 Canon Inc 収差計測方法、露光装置及びデバイス製造方法
US8248580B2 (en) 2008-05-01 2012-08-21 Canon Kabushiki Kaisha Scanning exposure apparatus and method of manufacturing device
US8446564B2 (en) 2008-06-02 2013-05-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8264671B2 (en) 2008-06-02 2012-09-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2009302532A (ja) * 2008-06-02 2009-12-24 Asml Netherlands Bv リソグラフィ装置及びデバイス製造方法
US8477289B2 (en) 2008-06-02 2013-07-02 Asml Netherlands B.V. Position measurement using natural frequency vibration of a pattern
JP2010109294A (ja) * 2008-10-31 2010-05-13 Canon Inc 測定装置、露光装置およびデバイス製造方法
JP2011176312A (ja) * 2010-02-25 2011-09-08 Nikon Corp 瞳透過率分布の測定方法および測定装置、露光方法および露光装置、並びにデバイス製造方法
JP2015144275A (ja) * 2010-02-25 2015-08-06 株式会社ニコン 光学系の測定方法、露光装置の制御方法、露光方法、およびデバイス製造方法
JP2022184816A (ja) * 2021-05-31 2022-12-13 カール・ツァイス・エスエムティー・ゲーエムベーハー 測定される入射瞳内で照明光によって照明されたときの光学系の結像品質を決定するための方法

Also Published As

Publication number Publication date
KR100654784B1 (ko) 2006-12-08
KR20040041592A (ko) 2004-05-17
TWI233655B (en) 2005-06-01
US20070097355A1 (en) 2007-05-03
US7423740B2 (en) 2008-09-09
JP4343685B2 (ja) 2009-10-14
EP1422562A1 (en) 2004-05-26
EP1422562B1 (en) 2013-04-17
US7190443B2 (en) 2007-03-13
CN1547681A (zh) 2004-11-17
JPWO2003021352A1 (ja) 2004-12-16
EP1422562A4 (en) 2011-11-09
KR20060098404A (ko) 2006-09-18
US20030133099A1 (en) 2003-07-17
CN100350326C (zh) 2007-11-21
US20050206881A1 (en) 2005-09-22
US7375805B2 (en) 2008-05-20

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