WO2003009279A1 - Tete magnetique et son procede de production - Google Patents

Tete magnetique et son procede de production Download PDF

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Publication number
WO2003009279A1
WO2003009279A1 PCT/JP2001/006234 JP0106234W WO03009279A1 WO 2003009279 A1 WO2003009279 A1 WO 2003009279A1 JP 0106234 W JP0106234 W JP 0106234W WO 03009279 A1 WO03009279 A1 WO 03009279A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
magnetic head
resist
magnetic
lower terminal
Prior art date
Application number
PCT/JP2001/006234
Other languages
English (en)
Japanese (ja)
Inventor
Keiichi Nagasaka
Chikayoshi Kamata
Yutaka Shimizu
Atsushi Tanaka
Original Assignee
Fujitsu Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Limited filed Critical Fujitsu Limited
Priority to PCT/JP2001/006234 priority Critical patent/WO2003009279A1/fr
Publication of WO2003009279A1 publication Critical patent/WO2003009279A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Definitions

  • the present invention relates to a magnetic head that achieves high sensitivity in response to a magnetic medium. More specifically, the sense ® fS force C P P flowing in the SJ ⁇ J? Direction (Current
  • the spin-valve film is used for the leak-resisting element.
  • CIP Current in Plane
  • CPP Current in Plane
  • TMR Tunneling MagnetoResistance
  • a head using a magnetic resistance element that allows a sense to flow in the direction has a preferable value that the output power of the element increases as its size becomes smaller. Therefore, it is promising as a high-sensitivity head for use in recent years with high-density magnetic words.
  • the magnetization direction force of the free (Free) layer changes (rotates) due to the signal magnetic field from the S magnetic recording medium.
  • a change in the relative angular force S between the magnetization direction of the free layer and the magnetization direction of the pinned layer changes the resistance of the element.
  • This change in magnetoresistance is converted into a change, and the change in the magnetic recording medium is obtained. Play the magnetism that had been done.
  • the above-mentioned CPP element and TMR element generally have a magnetic domain control in which a hard film or the like is disposed at both ends thereof in order to control the magnetization direction of the above-mentioned free layer.
  • the ratio of the dead zone generated in both ships [5] of the element in contact with the hard film increases.
  • This dead zone is the S region where the magnetization rotation is suppressed by the strong magnetic field received from the hard film at both ends of the free layer in contact with the hard film. Even if a sense flows in this dead zone, a change in the magnetoresistance cannot be detected, and on the contrary, a noise or the like is applied, which causes a problem that the element sensitivity S decreases. Disclosure of the invention
  • etching is performed by ion milling or the like using a resist pattern or the like formed by a conventional photolithography technique as a mask. Or a method of embedding the terminal material in a perfect contact hole using a resist pattern or the like as a mask.
  • the main object of the present invention is to include a magnetic impairment element flowing in the direction of the sense current force, and to obtain the same effect as that obtained by converting the element into an element. It is to remove magnetic heads that can be reproduced with high sensitivity and to manufacture them.
  • the upper and lower terminals are in contact with the upper and lower surfaces of the magnetic resistance element, respectively.] ⁇ 3 ⁇ 4 ⁇
  • the lower terminal film is provided.
  • the magnetic head has a structure in which the sense current flows in the thickness direction of the impeachment element.
  • at least one of the lower terminal film and the lower terminal film is formed so as to have different cross-sections in the direction of the knitting and is achieved by the magnetic head.
  • the annihilation head is converted to a tfitam element, and the lower terminal film is smaller than the contact element, and the lower terminal film is smaller than the contact element. It can be formed into a teno or a single shape whose cross-sectional area increases toward the element.
  • the air head is thrown into the airtight leaking element of the t & lE lower membrane »
  • the fiber of the membrane is smaller than the resistance of the airtight element tfitsm, and the lower membrane of the f & IB is the air absorbing element. It can be formed in a tapered shape such that the knitted fiber becomes smaller as it goes.
  • the knitting head has the following characteristics:
  • the fiber of the knitting upper film that is thrown into the air bubble element is smaller than the fiber having the anaerobic cell element power S. It can be formed in a tapered shape such that the squeeze fiber becomes smaller toward the depletion element.
  • At least one of the contact upper terminal H and the lower film is made of a material selected from the group consisting of Ta, Mo, Ti and one or more of them, or an alloy thereof. Can be.
  • the same effect as that of the magnetic effect element is obtained, so that the output can be increased.Furthermore, it is possible to flow the sense m ⁇ so as to avoid the dead zone described above. As a result, a highly sensitive magnetic head corresponding to high density can be produced.
  • a method of manufacturing a magnetic head of il ⁇ t which has an upper terminal and a lower terminal film that are in contact with each other at the top of the magnetic capacitor element, and flows sense in the HI? Direction of the vertical capacitor element. So,
  • the selective etching method such as ⁇ JS ion etching (R I E) can be used for etching of the column lower film of the ⁇ upper terminal under the resist ⁇ X.
  • FIG. 1 is a diagram showing the relationship between the bias and the diameter difference between the upper surface of the terminal film and the terminal film TS after being tapered by etching.
  • FIG. 2 is a diagram illustrating a schematic configuration of the magnetic head.
  • FIG. 3 is a diagram illustrating an example of manufacturing a magnetic head having an inverted tapered lower terminal film.
  • FIG. 4 is a diagram showing an example of manufacturing a magnetic head having a forward tapered lower terminal film.
  • FIG. 5 is a diagram showing an example of manufacturing a magnetic head having an inverted tapered upper terminal film.
  • FIG. 6 is a diagram showing a main part of the magnetic word 3 ⁇ fB ⁇ .
  • the magnetic head of this difficult example has a terminal film that changes the sterilization in the horizontal direction.
  • the contact between the terminal film and the magnetoresistive element is smaller than the male of the magnetoresistive element.
  • the structure in which the terminal film is formed to have a tapered shape and the fiber in which the terminal film is in contact with the magnetic fiber element becomes smaller in the magnetic fiber element.
  • the tapered shape of the terminal film includes a forward tapered shape in which the terminal film is expanded downward and an inverted tapered shape in which the terminal film is reduced downward.
  • FIG. 1 is a diagram showing a relationship between a crane on a terminal film upper surface and a terminal ITF surface after being tapered by etching, and Bias® ⁇ .
  • the RI method that has selectivity for etching is used.
  • a sample was prepared on which a 100 nm Au film was formed as a stop film at the time of RI, and a 200 nm Ta film was formed assuming a terminal material.
  • a resist pattern was formed thereon using photolithography technology.
  • the Ta film was etched by RIE using SF 6 gas. Etching conditions were as follows: gas flow rate: 20 sccm, process gas pressure: 0.2 Pa, 3 ⁇ 43 ⁇ 43 ⁇ 4: room temperature, antenna: 10 OW, and the bias of anticoagulation was changed to 10, 60, 100 W. Was. Since the etching rate varies depending on the noise power, the processing time was determined for each noise as the time for etching Ta of 200 nm.
  • Figure 1 shows the results at this time.
  • the ⁇ ® diameter was shorter than the upper diameter, was positive, long, and was negative.
  • the upper surface diameter after etching was almost equal to the resist diameter in each bias W.
  • Bias® ⁇ is small, the lower diameter is shorter than the upper diameter, and the taper is reverse tapered. Nari Neihiro became 1 med taper ⁇ . This is because the etching can be controlled isotropically or anisotropically by the bias.
  • ⁇ am can be controlled by changing the bias at the time of etching. This is not limited to the bias 3 ⁇ 4 ⁇ , but can be controlled depending on the processing time and the relationship between the etching gas and the material to be etched.
  • the material to be etched is not limited to Ta only.For example, it is expected that the same effect can be obtained by using a material that is etched with SF6 gas consisting of Mo, Ti, W, and their combination. Is done. These materials are preferred as materials for forming a terminal film connected to a magnetic resistance element.
  • the terminal film is formed in a tapered shape using the above principle, and the structure of the magnetic head is designed so that the area of the magnetic film element that the terminal film contacts is small. are doing.
  • FIG. 2 is a diagram exemplifying the general difficulty of the magnetic head.
  • a lower terminal film is formed, on which a magnetic resistive element MR force S is formed, and on this magnetic resistive element MR, an upper film is formed.
  • the lower terminal film is formed of the first lower layer 11, the stop film 12 of R I, and the second lower terminal film 13 having a reverse tapered cross section.
  • the stop film 12 is formed of a conductive material having low reactivity to RIE such as Au.
  • the first lower film 11 and the second lower terminal film 13 are formed of a conductive thin metal film, for example, Ta, Mo, Ti, W, or a combination thereof. Therefore, the first lower terminal film 11 is a Stoff.
  • the film 12 and the second lower terminal film 13 I are integrally formed as a »film.
  • the second lower film 13 is formed in a wafer shape as described above, and is in contact with the lower surface of the magnetic resistance element MR thereon.
  • the second lower terminal film 13 is in contact with the magnetoresistive device MR in an area smaller than the area of the lower surface.
  • the magnetic reticulation element MR is a CPP element or a TMR element in which sense flows in the rich direction.
  • a hard film 16 is formed on the fe wrap 15 to control the magnetic domain of the free layer in the magnetic resistance element MR.
  • the upper terminal film above the magnetic resistance element MR is formed by a first upper terminal film 17 and a second upper terminal film 18 each having a reverse tapered cross section.
  • the first upper film 17 and the second upper terminal film 18 are formed of a conductive metal thin film, similarly to the age of the knitted lower film. Therefore, the first upper film 17 and the second upper terminal film 18 are integrated to form an upper terminal film.
  • the first upper terminal film 17 is also formed according to the principle described above. It has a shape that is smaller than the top surface area of the magnetic effect element MR below it, and is in contact with the magneto-effect element MR.
  • the size of the upper and lower terminal films in contact with the magnetoresistive element MR is small, so Similarly, the output is increased.
  • the hard film 16 allows the terminal film not to be bonded to the insensitive portions formed at both ends of the magnetoresistive element MR. Therefore, the magnetic head can reproduce the signal magnetic field Hsig from the outside with high sensitivity.
  • the magnetic head 10 shown in FIG. 2 is more preferable.
  • the area of the worms on the upper and lower sides of the magnetic element MR is reduced. "Even though the film is formed, the effect can be obtained even at an age that has a smaller area than the magnetic resistance element MR.
  • terminal film of the magnetic head 10 shown in FIG. 2 is formed in a tapered shape, it may have a forward tapered shape.
  • FIG. 3 shows a manufacturing example of a magnetic head having a lower terminal film of theno
  • Fig. 4 shows a manufacturing example of a magnetic head having a forward tapered lower film
  • FIG. 5 is a view showing an example of manufacturing a magnetic head having an inverted tapered upper terminal film. 3 to 5, the same reference numerals are used for the portions corresponding to the configuration of the magnetic head 10 shown in FIG.
  • a second lower film 13 is formed on the first lower terminal film 11 with a stop film 12 such as Au interposed therebetween.
  • a resist 50 is formed on the second lower terminal film 13 by using a photolithography technique.
  • the second lower film 13 is formed in an inversely tapered shape by using the RI method so that the crossing of the second lower film 13 becomes smaller downward.
  • the bias 3 ⁇ 4 ⁇ is set low by using the method shown in FIG. 1, and control is performed such that the lower end side of the second lower film 13 is unnecessarily ground.
  • the upper surface of the second lower terminal film 13 is exposed by performing a flattening process such as CMP (Chemical and Mechanical Polishing).
  • the exposure of the # ⁇ second lower layer 13 can be made smaller than that of the resist 50 by increasing the amount of flatness. That is, when the flat opening is increased, the level of water on the flat surface is reduced, so that the S force S of the exposed surface of the second lower terminal film 13 can be reduced accordingly.
  • a magnetoresistive element MR is formed on the exposed surface of the second lower film 13.
  • the exposed surface of the second lower film 13 serves as a surface through which the sense fl ⁇ flows to the magnetoresistive element MR.
  • the illustration of the subsequent processing steps is omitted, but thereafter, the magnetic resistive element MR is patterned and formed into a predetermined shape designed in advance.
  • the resultant magnetic resistance element MR is formed with a larger thickness than the second lower terminal film 13. That is, as shown in FIG. 2, the area excavated in the second lower terminal film 13 is formed to be smaller than the area of the lower surface of the magnetic effect element MR. .
  • the second lower terminal film 13 in a tapeless shape without the tapered shape shown in FIG.
  • the cutting of the terminal film may be controlled by controlling the etching amount in the process shown in FIG. 3 ⁇ . .
  • Fig. 4 differs from Fig. 3 in that the second lower terminal film has a 13-force S forward taper This is an example of the production of
  • FIG. 4A is the same as the process of FIG. 3A, and the second lower terminal film 13 is formed on the first lower film 11 with a stop film 12 such as Au interposed therebetween by ⁇ ⁇ .
  • a resist 50 is formed on the second lower terminal film 13 using photolithography.
  • the second lower film 13 is formed in a forward tapered shape by using the RI method.
  • the bias power is set high based on FIG. 1, and control is performed so that the bias power is increased as the lower rule of the second lower terminal film 13 is satisfied.
  • the entire surface of the second lower terminal film 13 is further etched to reduce the size of the second lower terminal film 13 so as to be smaller than the original dimension indicated by the dotted line.
  • the amount of etching here is set so that ⁇ on the upper surface of the delicate second lower terminal film 13 in the final form of the magnetic reluctance element MR formed in a subsequent step is reduced.
  • FIG. 4D an insulating film 14 is formed on the entire upper surface of the second lower terminal film 13, and in FIG. A flat erosion such as PM is performed to expose the upper surface of the second lower film 13.
  • FIG. 4F a magnetic fiber element MR is formed thereon.
  • the magnetic reticule element MR after molding is larger than that of the second lower film 13. 3 ⁇ 4a is formed.
  • FIGS. 3 and 4 mainly show examples of manufacturing the lower terminal film in the manufacturing process of the magnetic head.
  • the manufacturing process of the magnetic head in particular, focuses on the example of manufacturing the upper terminal film. That is, by performing the steps shown in FIGS. 3 and 4 and the following FIG. 5, it is possible to manufacture a magnetic head having a terminal film having a small upper and lower sides.
  • FIG. 5 the detailed structure of the lower film is omitted, and the lower film 11 is shown.
  • the first upper terminal film 17 is formed after the lower terminal film 11 and the surface of the first terminal film 11 are exposed.
  • This first upper terminal film 17 A resist 55 is formed using S ⁇ .
  • the first upper terminal film 17 is etched by the RIE method so as to have an inverted tapered shape.
  • the lower end of the first upper terminal film 17 in contact with the magnetic resistor IMR can be formed to be smaller than B due to the element 55 of the resist 55, and the thickness can be reduced by the etching conditions. 3 ⁇ 4 can also be controlled.
  • etching of the magnetoresistive film MR is performed by ion milling or the like using the resist 55 as it is.
  • the same register 55 can be used as described above, it is not necessary to perform the alignment between the MR element and the preferred film as in the case of 5f5f. Therefore, in the manufacturing process of the magnetic head, the element formation accuracy can be improved and the process can be simplified.
  • the size of the magnetic element MR can be reduced to the same value as the length of the resist 55 by 1 / J, so that the size of the MR element can be promoted.
  • the incense JI 15 and the magnetic film 16 for controlling the magnetic domain are sequentially formed.
  • the insulating film 15 it is preferable to use a method and a suitable method of the surroundings such as CVD (Chemical Vapor Deposition).
  • CVD Chemical Vapor Deposition
  • the hard film 16 use anisotropic high-growth and growth to suppress the wraparound to the magnetic effect element MR.
  • the resist 55 is lifted off, and the superb 15 and the hard film 16 on the upper part of the magnetoresistive element M are simultaneously removed. Therefore, also in this case, the process can be simplified in the manufacturing process of the magnetic head.
  • a second upper terminal film 18 is formed on the first upper terminal film 17 to form an upper terminal portion.
  • the magnetic head 10 capable of reproducing a signal magnetic field from a magnetic recording medium with high sensitivity and a method of manufacturing the same have been described.
  • This magnetic head 10 and the conventional inductor It is evident that a thin film head of the active type can be turned into a reproduction head.
  • FIG. 6 is a diagram showing a main part of the magnetic recording / reproducing apparatus 70.
  • a magnetic disk 70 is equipped with a hard disk 71 as a magnetic sensing medium, and is rotated ⁇ .
  • a magnetic head IS is generated by a composite magnetic head 60 having a magnetic head 10 of the SiSi example on the side.
  • the composite magnetic head 60 is fixed to the slider 73 at the tip of the arm 72.
  • a two-stage actuator combining a normal actuator and a 3 ⁇ 43 ⁇ 4m3 ⁇ 43 ⁇ 4lif fiber actuator can be employed.
  • the magnetic readout may be constituted by using only a CPP element or a TMR element, or by using a magnetic head.

Abstract

L'invention concerne une tête magnétique qui comprend un film terminal supérieur et un film terminal inférieur respectivement en contact avec les faces supérieure et inférieure d'un élément d'action de magnétorésistance et qui permet à un courant de détection de circuler dans le sens d'épaisseur de l'élément d'action de magnétorésistance. Au moins le film terminal supérieur ou bien le film terminal inférieur est formé de telle façon que les zones de section transversales latérales soient différentes dans le sens d'épaisseur du film.
PCT/JP2001/006234 2001-07-18 2001-07-18 Tete magnetique et son procede de production WO2003009279A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2001/006234 WO2003009279A1 (fr) 2001-07-18 2001-07-18 Tete magnetique et son procede de production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2001/006234 WO2003009279A1 (fr) 2001-07-18 2001-07-18 Tete magnetique et son procede de production

Publications (1)

Publication Number Publication Date
WO2003009279A1 true WO2003009279A1 (fr) 2003-01-30

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11175920A (ja) * 1997-12-05 1999-07-02 Nec Corp 磁気抵抗効果型複合ヘッドおよびその製造方法
JP2000215415A (ja) * 1999-01-26 2000-08-04 Nec Corp 磁気抵抗効果素子
JP2001006130A (ja) * 1999-06-24 2001-01-12 Tdk Corp トンネル磁気抵抗効果型ヘッド
JP2001067624A (ja) * 1999-08-26 2001-03-16 Sony Corp 磁気ヘッド及びその製造方法
JP2001084526A (ja) * 1999-09-14 2001-03-30 Fujitsu Ltd 磁気センサ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11175920A (ja) * 1997-12-05 1999-07-02 Nec Corp 磁気抵抗効果型複合ヘッドおよびその製造方法
JP2000215415A (ja) * 1999-01-26 2000-08-04 Nec Corp 磁気抵抗効果素子
JP2001006130A (ja) * 1999-06-24 2001-01-12 Tdk Corp トンネル磁気抵抗効果型ヘッド
JP2001067624A (ja) * 1999-08-26 2001-03-16 Sony Corp 磁気ヘッド及びその製造方法
JP2001084526A (ja) * 1999-09-14 2001-03-30 Fujitsu Ltd 磁気センサ

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