WO2003009279A1

WO2003009279A1 - Magnetic head and its manufacturing method

Info

Publication number: WO2003009279A1
Application number: PCT/JP2001/006234
Authority: WO
Inventors: Keiichi Nagasaka; Chikayoshi Kamata; Yutaka Shimizu; Atsushi Tanaka
Original assignee: Fujitsu Limited
Priority date: 2001-07-18
Filing date: 2001-07-18
Publication date: 2003-01-30

Abstract

A magnetic head which comprises an upper terminal film and a lower terminal film contacting with the upper and lower faces, respectively, of a magnetoresistance effect element and allows a sense current to flow in the direction of the film thickness of the magnetoresistance effect element. At least one of the upper terminal film and the lower terminal film is so formed that the lateral cross-sectional areas are different in the direction of the film thickness.

Description

Magnetic head and its manufacture

Sickle field

TECHNICAL FIELD The present invention relates to a magnetic head that achieves high sensitivity in response to a magnetic medium. More specifically, the sense ® fS force C P P flowing in the SJ ^ J? Direction (Current

Perpendicular to Plane) type of spin pulp, magnetic heads using films and tunnel junction films.

The spin-valve film is used for the leak-resisting element. There are two types: CIP (Current in Plane) type, in which sense demand flows in the in-plane direction of the film, and CPP type, in which sense flows in the ID? Direction. is there. In this specification, the description will be made with the CPP type spin pulp 'film as a CPP device and a tunneling film (TMR: Tunneling MagnetoResistance) as a TMR device. Background art

A head using a magnetic resistance element that allows a sense to flow in the direction has a preferable value that the output power of the element increases as its size becomes smaller. Therefore, it is promising as a high-sensitivity head for use in recent years with high-density magnetic words.

By the way, in a magnetic head using a CPP element TMR element, the magnetization direction force of the free (Free) layer changes (rotates) due to the signal magnetic field from the S magnetic recording medium. A change in the relative angular force S between the magnetization direction of the free layer and the magnetization direction of the pinned layer changes the resistance of the element. This change in magnetoresistance is converted into a change, and the change in the magnetic recording medium is obtained. Play the magnetism that had been done.

the above. In a silicon element TMR element, sense is caused by the Ml arranged in contact with the upper and lower surfaces of the element, and the magnetic field of the element is read to read the signal magnetic field from the magnetic medium. In these devices, especially the CPP device, as the cross-sectional area of the sense fl ^ decreases, the resistance change increases and the output power S increases. That is, in a CPP element, etc., The output can be increased by reducing the width / cross section to / J.

However, the above-mentioned CPP element and TMR element generally have a magnetic domain control in which a hard film or the like is disposed at both ends thereof in order to control the magnetization direction of the above-mentioned free layer. In the element having the magnetic domain control structure as described above, as the element size decreases, the ratio of the dead zone generated in both ships [5] of the element in contact with the hard film increases. This dead zone is the S region where the magnetization rotation is suppressed by the strong magnetic field received from the hard film at both ends of the free layer in contact with the hard film. Even if a sense flows in this dead zone, a change in the magnetoresistance cannot be detected, and on the contrary, a noise or the like is applied, which causes a problem that the element sensitivity S decreases. Disclosure of the invention

In order to solve the above-mentioned dead zone problem, it is conceivable to make the area of the upper and lower terminal films that are in contact with the element smaller than that of the element male, and create a magnetic head that allows the sense to flow avoiding the dead zone. Can be In such a structure, since the sense flows to a layer of ^ ¾ smaller than B¾ of the element, the same effect can be obtained as when the element is practically J / ¾. . Therefore, this magnetic head structure is also preferable because it can increase the output of the CPP element and the TMR element. By the way, in order to obtain magnetic head fabrication in which the terminal is smaller than the B¾ of the element as described above, for example, etching is performed by ion milling or the like using a resist pattern or the like formed by a conventional photolithography technique as a mask. Or a method of embedding the terminal material in a perfect contact hole using a resist pattern or the like as a mask.

However, there is a limit to the miniaturization of the resist pattern size that can be achieved by photolithography that has been realized at present. Leaving is regulated.

Also, in the actual manufacturing process, it is difficult to align the resist pattern between the element and the »film. Therefore, even if the conventional photolithography ^ I is used as it is, a small Therefore, it is difficult to form a magnetic head with an ia * structure that has a film that is smaller than that of the cap element.

In the case where a terminal film is formed by embedding a terminal material in the contact hole of Jungkang No., it is necessary to accurately form the contact hole in the middle of the device avoiding the dead zone. However, the technology for forming contact holes with such high-precision positioning has been identified.

Therefore, the main object of the present invention is to include a magnetic impairment element flowing in the direction of the sense current force, and to obtain the same effect as that obtained by converting the element into an element. It is to remove magnetic heads that can be reproduced with high sensitivity and to manufacture them.

The above object is, as described in claim 1,

The upper and lower terminals are in contact with the upper and lower surfaces of the magnetic resistance element, respectively.] © ¾ ぴ The lower terminal film is provided. The magnetic head has a structure in which the sense current flows in the thickness direction of the impeachment element. In addition, at least one of the lower terminal film and the lower terminal film is formed so as to have different cross-sections in the direction of the knitting and is achieved by the magnetic head.

And the annihilation head is converted to a tfitam element, and the lower terminal film is smaller than the contact element, and the lower terminal film is smaller than the contact element. It can be formed into a teno or a single shape whose cross-sectional area increases toward the element.

In addition, the air head is thrown into the airtight leaking element of the t & lE lower membrane »The fiber of the membrane is smaller than the resistance of the airtight element tfitsm, and the lower membrane of the f & IB is the air absorbing element. It can be formed in a tapered shape such that the knitted fiber becomes smaller as it goes.

In addition, the knitting head has the following characteristics: | The fiber of the knitting upper film that is thrown into the air bubble element is smaller than the fiber having the anaerobic cell element power S. It can be formed in a tapered shape such that the squeeze fiber becomes smaller toward the depletion element.

In addition, at least one of the contact upper terminal H and the lower film is made of a material selected from the group consisting of Ta, Mo, Ti and one or more of them, or an alloy thereof. Can be.

According to the above invention, the same effect as that of the magnetic effect element is obtained, so that the output can be increased.Furthermore, it is possible to flow the sense m ^ so as to avoid the dead zone described above. As a result, a highly sensitive magnetic head corresponding to high density can be produced.

In addition, the above object is as described in claim 6,

A method for manufacturing a magnetic head having an upper terminal shielding layer and a lower terminal film that are in contact with upper and lower surfaces of a magnetic resistance element, respectively, and flowing a sense electrode in a direction of a magnetic resistance element. ,

forming a resist for protecting the ffilH lower terminal film on the lower film, and then patterning the resist into a predetermined pattern;

etching the ttff lower terminal under the resist after the ftlt self-patterning downward so as to be smaller than the resist width;

A step of forming an absolute film on the entire surface of the lower terminal film;

Exposing the lower terminal film with the flat film, setting the amount of exposure in accordance with the amount of the flat film, and setting the B of the lower terminal film in contact with the thin film. It is also hampered by the removal of magnetic heads containing.

Further, the above object is as described in claim 7,

A method of manufacturing a magnetic head of il ^ t, which has an upper terminal and a lower terminal film that are in contact with each other at the top of the magnetic capacitor element, and flows sense in the HI? Direction of the vertical capacitor element. So,

Forming a resist for protecting the key terminal film on the lower film, and then patterning the resist into a predetermined pattern;

A step of etching such that the lower terminal area of the lower part of the resist under the resist after the disgusting patterning is directed downward to be larger than the resist width;

After removing the resist, a step of performing an etching process to reduce the entire lower terminal film;

The lower part of the film

Exposing the film below the tfjta by flattening the magnetic head. It is also sought by the law.

In addition, the above object is as described in claim 8,

A method of manufacturing a magnetic head having a structure in which an upper terminal 1 and a lower layer which are in contact with the upper and lower surfaces of a magnetic element are provided, respectively, and a sense film is provided in which the sense flows in the direction of the element. So,

Forming a resist for protecting the upper terminal film on the upper terminal film, and then patterning the resist into a predetermined pattern;

tfjiB / etching the ttiiB upper terminal film width under the resist after turning downward so as to be smaller than the resist width;

ΙίΠΒ ^ Cheerful ^! This can also be achieved by a method of manufacturing a magnetic head including a step of etching while leaving the area of the upper surface of the semiconductor element larger than the area of the upper terminal film in contact with the semiconductor element.

In addition, the selective etching method such as ^ JS ion etching (R I E) can be used for etching of the column lower film of the 己 upper terminal under the resist ^ X.

According to the invention as set forth in claims 6 to 8, it is possible to form a terminal film having a smaller width and a width smaller than that of the resist pattern by changing the conditions of the 31-scale etching, etc. A highly sensitive magnetic head having a structure can be manufactured. A magnetic recording and / or reading device having such a magnetic head, or a magnetic recording / reading device having a 3rd-order function, can reduce the density. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a diagram showing the relationship between the bias and the diameter difference between the upper surface of the terminal film and the terminal film TS after being tapered by etching.

FIG. 2 is a diagram illustrating a schematic configuration of the magnetic head.

FIG. 3 is a diagram illustrating an example of manufacturing a magnetic head having an inverted tapered lower terminal film.

FIG. 4 is a diagram showing an example of manufacturing a magnetic head having a forward tapered lower terminal film. FIG. 5 is a diagram showing an example of manufacturing a magnetic head having an inverted tapered upper terminal film.

FIG. 6 is a diagram showing a main part of the magnetic word 3 ^ fB ^. BEST MODE FOR CARRYING OUT THE INVENTION

The magnetic head of this difficult example has a terminal film that changes the sterilization in the horizontal direction. The contact between the terminal film and the magnetoresistive element is smaller than the male of the magnetoresistive element. For example, the structure in which the terminal film is formed to have a tapered shape and the fiber in which the terminal film is in contact with the magnetic fiber element becomes smaller in the magnetic fiber element.

The tapered shape of the terminal film includes a forward tapered shape in which the terminal film is expanded downward and an inverted tapered shape in which the terminal film is reduced downward.

First, the principle for forming the terminal film in contact with the magnetic effect element into a tapered shape that changes the transverse male as described above will be described.

FIG. 1 is a diagram showing a relationship between a crane on a terminal film upper surface and a terminal ITF surface after being tapered by etching, and Bias®Λ. In this Wei example, the RI method that has selectivity for etching is used.

A sample was prepared on which a 100 nm Au film was formed as a stop film at the time of RI, and a 200 nm Ta film was formed assuming a terminal material. A resist pattern was formed thereon using photolithography technology. For this sample, the Ta film was etched by RIE using SF ₆ gas. Etching conditions were as follows: gas flow rate: 20 sccm, process gas pressure: 0.2 Pa, ¾¾¾: room temperature, antenna: 10 OW, and the bias of anticoagulation was changed to 10, 60, 100 W. Was. Since the etching rate varies depending on the noise power, the processing time was determined for each noise as the time for etching Ta of 200 nm.

Figure 1 shows the results at this time. The Τ® diameter was shorter than the upper diameter, was positive, long, and was negative. The upper surface diameter after etching was almost equal to the resist diameter in each bias W. When Bias®Λ is small, the lower diameter is shorter than the upper diameter, and the taper is reverse tapered. Nari Neihiro became 1 med taper 开. This is because the etching can be controlled isotropically or anisotropically by the bias.

As described above, τ am can be controlled by changing the bias at the time of etching. This is not limited to the bias ¾Λ, but can be controlled depending on the processing time and the relationship between the etching gas and the material to be etched. The material to be etched is not limited to Ta only.For example, it is expected that the same effect can be obtained by using a material that is etched with SF6 gas consisting of Mo, Ti, W, and their combination. Is done. These materials are preferred as materials for forming a terminal film connected to a magnetic resistance element.

In the present embodiment, the terminal film is formed in a tapered shape using the above principle, and the structure of the magnetic head is designed so that the area of the magnetic film element that the terminal film contacts is small. are doing.

FIG. 2 is a diagram exemplifying the general difficulty of the magnetic head. On the upper side of the drawing, a lower terminal film is formed, on which a magnetic resistive element MR force S is formed, and on this magnetic resistive element MR, an upper film is formed.

The lower terminal film is formed of the first lower layer 11, the stop film 12 of R I, and the second lower terminal film 13 having a reverse tapered cross section. As described above, the stop film 12 is formed of a conductive material having low reactivity to RIE such as Au. The first lower film 11 and the second lower terminal film 13 are formed of a conductive thin metal film, for example, Ta, Mo, Ti, W, or a combination thereof. Therefore, the first lower terminal film 11 is a Stoff. The film 12 and the second lower terminal film 13 I are integrally formed as a »film.

The second lower film 13 is formed in a wafer shape as described above, and is in contact with the lower surface of the magnetic resistance element MR thereon. The second lower terminal film 13 is in contact with the magnetoresistive device MR in an area smaller than the area of the lower surface. The magnetic reticulation element MR is a CPP element or a TMR element in which sense flows in the rich direction. Here, although the detailed description of the layer configuration is omitted, when a signal magnetic field H sig from the outside is received, the magnetization of the free layer in the magnetic effect element MR rotates. At both ends of the second lower membrane 13 and the airtight fiber element MR, 4, 15 force S formed. Further, a hard film 16 is formed on the fe wrap 15 to control the magnetic domain of the free layer in the magnetic resistance element MR. The upper terminal film above the magnetic resistance element MR is formed by a first upper terminal film 17 and a second upper terminal film 18 each having a reverse tapered cross section. The first upper film 17 and the second upper terminal film 18 are formed of a conductive metal thin film, similarly to the age of the knitted lower film. Therefore, the first upper film 17 and the second upper terminal film 18 are integrated to form an upper terminal film.

The first upper terminal film 17 is also formed according to the principle described above. It has a shape that is smaller than the top surface area of the magnetic effect element MR below it, and is in contact with the magneto-effect element MR.

_____________________________________ In the magnetic head 10 having the above-mentioned structure, the size of the upper and lower terminal films in contact with the magnetoresistive element MR is small, so Similarly, the output is increased. In addition, the hard film 16 allows the terminal film not to be bonded to the insensitive portions formed at both ends of the magnetoresistive element MR. Therefore, the magnetic head can reproduce the signal magnetic field Hsig from the outside with high sensitivity.

It should be noted that the magnetic head 10 shown in FIG. 2 is more preferable. As a form, the area of the worms on the upper and lower sides of the magnetic element MR is reduced. "Even though the film is formed, the effect can be obtained even at an age that has a smaller area than the magnetic resistance element MR.

Further, although the terminal film of the magnetic head 10 shown in FIG. 2 is formed in a tapered shape, it may have a forward tapered shape.

Further, the production of a magnetic head having a tapered terminal film will be described with reference to FIGS. 3 to 5 described below.

Fig. 3 shows a manufacturing example of a magnetic head having a lower terminal film of theno, and Fig. 4 shows a manufacturing example of a magnetic head having a forward tapered lower film. FIG. 5 is a view showing an example of manufacturing a magnetic head having an inverted tapered upper terminal film. 3 to 5, the same reference numerals are used for the portions corresponding to the configuration of the magnetic head 10 shown in FIG. In FIG. 3A, a second lower film 13 is formed on the first lower terminal film 11 with a stop film 12 such as Au interposed therebetween. Thereafter, a resist 50 is formed on the second lower terminal film 13 by using a photolithography technique.

In FIG. 3A, the second lower film 13 is formed in an inversely tapered shape by using the RI method so that the crossing of the second lower film 13 becomes smaller downward. In this RI method, the bias ¾Λ is set low by using the method shown in FIG. 1, and control is performed such that the lower end side of the second lower film 13 is unnecessarily ground.

FIG. Then, after the resist 50 is lifted off, the insulation extension 14 is applied to the entire upper surface by β¾Ι.

In FIG. 3D, the upper surface of the second lower terminal film 13 is exposed by performing a flattening process such as CMP (Chemical and Mechanical Polishing). The exposure of the # ^ second lower layer 13 can be made smaller than that of the resist 50 by increasing the amount of flatness. That is, when the flat opening is increased, the level of water on the flat surface is reduced, so that the S force S of the exposed surface of the second lower terminal film 13 can be reduced accordingly.

In FIG. 3E, a magnetoresistive element MR is formed on the exposed surface of the second lower film 13. Thus, the exposed surface of the second lower film 13 serves as a surface through which the sense fl ^ flows to the magnetoresistive element MR.

In FIG. 3, the illustration of the subsequent processing steps is omitted, but thereafter, the magnetic resistive element MR is patterned and formed into a predetermined shape designed in advance. The resultant magnetic resistance element MR is formed with a larger thickness than the second lower terminal film 13. That is, as shown in FIG. 2, the area excavated in the second lower terminal film 13 is formed to be smaller than the area of the lower surface of the magnetic effect element MR. .

Note that it is also possible to form the second lower terminal film 13 in a tapeless shape without the tapered shape shown in FIG. At this time, although the terminal cutting cannot be controlled by the flat profile in FIG. 3D, the cutting of the terminal film may be controlled by controlling the etching amount in the process shown in FIG. 3Β. .

• Next, Fig. 4 differs from Fig. 3 in that the second lower terminal film has a 13-force S forward taper This is an example of the production of

FIG. 4A is the same as the process of FIG. 3A, and the second lower terminal film 13 is formed on the first lower film 11 with a stop film 12 such as Au interposed therebetween by β ^. Next, a resist 50 is formed on the second lower terminal film 13 using photolithography.

In FIG. 4A, the second lower film 13 is formed in a forward tapered shape by using the RI method. In the RI method, the bias power is set high based on FIG. 1, and control is performed so that the bias power is increased as the lower rule of the second lower terminal film 13 is satisfied.

In FIG. 4C, after the resist 50 is lifted off, the entire surface of the second lower terminal film 13 is further etched to reduce the size of the second lower terminal film 13 so as to be smaller than the original dimension indicated by the dotted line. The amount of etching here is set so that 碰 on the upper surface of the delicate second lower terminal film 13 in the final form of the magnetic reluctance element MR formed in a subsequent step is reduced.

In FIG. 4D, an insulating film 14 is formed on the entire upper surface of the second lower terminal film 13, and in FIG. A flat erosion such as PM is performed to expose the upper surface of the second lower film 13. However, in FIG. 4, contrary to that shown in FIG. 3, the amount of flatness is increased and the second lower terminal film 13 is broken; Stop. Finally, in FIG. 4F, a magnetic fiber element MR is formed thereon.

Although ^^ in FIG. 4 is not shown for the subsequent processing steps, as shown in FIG. 3, the magnetic reticule element MR after molding is larger than that of the second lower film 13. ¾a is formed.

FIGS. 3 and 4 mainly show examples of manufacturing the lower terminal film in the manufacturing process of the magnetic head. In FIG. 5 shown below, the manufacturing process of the magnetic head, in particular, focuses on the example of manufacturing the upper terminal film. That is, by performing the steps shown in FIGS. 3 and 4 and the following FIG. 5, it is possible to manufacture a magnetic head having a terminal film having a small upper and lower sides.

In FIG. 5, the detailed structure of the lower film is omitted, and the lower film 11 is shown.

First, in FIG. 5A, the first upper terminal film 17 is formed after the lower terminal film 11 and the surface of the first terminal film 11 are exposed. This first upper terminal film 17 A resist 55 is formed using S ^.

In FIG. 5B, the first upper terminal film 17 is etched by the RIE method so as to have an inverted tapered shape. At this time, the lower end of the first upper terminal film 17 in contact with the magnetic resistor IMR can be formed to be smaller than B due to the element 55 of the resist 55, and the thickness can be reduced by the etching conditions. ¾ can also be controlled. Next, in FIG. 5C, etching of the magnetoresistive film MR is performed by ion milling or the like using the resist 55 as it is. In this manufacturing example, since the same register 55 can be used as described above, it is not necessary to perform the alignment between the MR element and the preferred film as in the case of 5f5f. Therefore, in the manufacturing process of the magnetic head, the element formation accuracy can be improved and the process can be simplified.

Also, at this time, the size of the magnetic element MR can be reduced to the same value as the length of the resist 55 by 1 / J, so that the size of the MR element can be promoted.

Further, in FIG. 5D, while the above-described resist 55 is used, the incense JI 15 and the magnetic film 16 for controlling the magnetic domain are sequentially formed. For the insulating film 15, it is preferable to use a method and a suitable method of the surroundings such as CVD (Chemical Vapor Deposition). Conversely, it is preferable that the hard film 16 use anisotropic high-growth and growth to suppress the wraparound to the magnetic effect element MR.

In FIG. 5E, the resist 55 is lifted off, and the superb 15 and the hard film 16 on the upper part of the magnetoresistive element M are simultaneously removed. Therefore, also in this case, the process can be simplified in the manufacturing process of the magnetic head.

In FIG. 5F, a second upper terminal film 18 is formed on the first upper terminal film 17 to form an upper terminal portion.

In the formation of the upper terminal swelling shown in FIG. It is also possible to form it into a unique shape.

According to the 5t ^ method shown in Fig. 5, it is possible to form a 5 ^ film smaller in width and width than the resist pattern ^ *, and high sensitivity having the structure shown in Fig. 2 A simple magnetic head can be manufactured.

In the example, the magnetic head 10 capable of reproducing a signal magnetic field from a magnetic recording medium with high sensitivity and a method of manufacturing the same have been described. This magnetic head 10 and the conventional inductor It is evident that a thin film head of the active type can be turned into a reproduction head.

Here, a brief description will be given of the magnetic language mounting with the magnetic head 10 shown in the example. FIG. 6 is a diagram showing a main part of the magnetic recording / reproducing apparatus 70. A magnetic disk 70 is equipped with a hard disk 71 as a magnetic sensing medium, and is rotated β. With a predetermined flying height facing the surface of the hard disk 71, for example, a magnetic head IS is generated by a composite magnetic head 60 having a magnetic head 10 of the SiSi example on the side. The composite magnetic head 60 is fixed to the slider 73 at the tip of the arm 72. For the combination magnetic head 60, a two-stage actuator combining a normal actuator and a ¾¾m¾¾lif fiber actuator can be employed.

Needless to say, the magnetic readout may be constituted by using only a CPP element or a TMR element, or by using a magnetic head.

Although the preferred difficult examples of the present invention have been described in detail above, the present invention is not limited to the specific embodiment, and various modifications may be made within the scope of the present invention described in the appended claims. Deformation 'changes are possible.

Claims

The scope of the claims

1. It has an upper terminal shield and a lower terminal film that are in contact with the upper and lower surfaces of the magnetic resistance element, respectively. A magnetic head, wherein at least one of the upper and lower films is formed so that the cross-section in the tfit direction is different.

2. In the magnetic head according to claim 1,

The area of the lower terminal film of tfilB, which glows on the element, is smaller than the diameter of the element.

The magnetic head is made of fiber, and the lower terminal film is formed in a tapered shape such that the size of the tiii¾t becomes larger as it goes toward the magnetic recording element.

3. The magnetic head according to claim 1,

The thickness of the ttnB lower terminal film, which is harmful to the leaky element, is smaller than the ¾a of the mm mm element.

A magnetic head, wherein the lower terminal film is formed in a tapered shape such that the cross-sectional area of the electrode becomes smaller toward the element.

4. To the magnetic head according to claims 1 to 3,

tfrta The area of the upper film converted to a pneumatic element is m

The element is smaller than

A magnetic head characterized in that the upper terminal film is formed in a tapered shape such that the cutting fiber becomes smaller as it goes toward the anaerobic fiber element.

5. The magnetic head according to any one of claims 1 to 4,

ΙϋϊΒAt least one of the upper i »J and the lower terminal film is made of one selected from the group consisting of Ta, M ₀ , T i and W force, one of them, or an alloy thereof. A magnetic head.

6. A method for manufacturing a magnetic head of «i, comprising an upper terminal and a lower terminal film that are in contact with the upper and lower surfaces of the magnetic reticule element, and flowing a sense m in the direction of the tiita air element. hand,

工程 forming a resist for protecting the lower terminal film on the lower terminal n, and patterning the resist into a predetermined pattern;

a step of turning the film width of the tin under the resist after the tin self-pattern jung downward so as to be smaller than the width of the resist;

A process of applying an absolute zeal to the entire surface of the lower terminal film,

A step of exposing the lower terminal film to the lower layer by means of a flat groove, setting the area of the lower film in contact with the film by controlling the amount of exposure according to the amount of the flat film; Including,-m removal of magnetic heads.

7. A method of manufacturing a magnetic head with an upper terminal and a lower terminal film that are in contact with the upper and lower surfaces of the magnetic resistance element, and allowing the sense to flow in the n? Direction of the unai air resistance element. And

工程 forming a resist for protecting the lower terminal film in the lower part, and then patterning the resist into a predetermined pattern;

A step of etching so that the width of the dismal lower terminal JJ below the resist after the knitting putter jung is larger than the downward resist ιΐί;

After removing the resist, performing an etching process to reduce the entirety of the tin lower terminal film;

A process of forming an inconspicuous film on the entire surface of the knitted lower terminal film,

Exposing the ttiSH lower terminal film by a flat surface.

A magnetic head manufacturing method where

8. Manufacture a magnetic head that has an upper terminal and a lower terminal film that are in contact with the upper and lower surfaces of the magnetic element, respectively, and has a structure in which a sense current flows in the Μ (¥ direction of the magnetoresistive element. Method

Forming a resist for protecting the film on the upper terminal film, and then patterning the resist 1 in a predetermined pattern;

Etching the upper part under the resist after the ItilB patterning so that the film interval is directed downward and smaller than the resist width;

including the step of leaving the upper surface of the tufa! element to be larger than the upper part of the ttiiB in contact with the element, and etching the film. Method of producing pad. 9 · The production of the magnetic head according to claim 8

Further including a step of sequentially applying a thread hard film on the entire surface, and a step of removing the ghost resist.

The method of manufacturing a magnetic head. 1 0. In the method of manufacturing the magnetic head described in claims 6 to 9 and the slip force, the ffJlBJ part under the disgusting resist (ί ») 3ΙΧ is used for etching the lower terminal film. The use of a selective etching method such as precious ion etching (RIE) is used to remove magnetic heads. 11. The magnetic head according to claim 1, wherein the magnetic head is used.

1 2. A composite magnetic head in which the magnetic head according to any one of claims 1 to 5 is used as a reproducing head and is combined with the head. 1 3. Magnetic words using the composite magnetic head according to claim 12