JP2001067624A - Magnetic head and its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem of the insulation characteristic between a magnetic shield and a magneto-resistive(MR) element by laminating and forming a first nonmagnetic insulating film and a second nonmagnetic insulating film via a giant magneto-resistive(GMR) element and supplying sense current in a direction perpendicular to an GMR element surface. SOLUTION: The GMR head 1 has the structure obtained by laminating plural thin-film layers formed a head element on a substrate and is held by a GMR body (GMR element body) 5, a lower magnetic shield 6 and an intermediate magnetic shield 7 via the insulating film 8. The GMR head 1 is the vertical type GMR head in which the direction of the sense current supplied to the MR element is perpendicular to the MR element is perpendicular to the intra- surface direction of a magnetic recording medium. The flanks of the GMR element 3 are formed to a tapered shape in order to achieve the state of good magnetical bonding between the GMR element 3 and a hard magnetic film 4. The hard magnetic film 4 is so formed as to come into contact with the GMR element 3 by the flanks formed to the tapered shape.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic head having a giant magnetoresistive element and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, with the development of computers and the like,
Higher recording densities are also being promoted in magnetic recording media, and it is desired to increase the recording capacity and increase the data transfer rate by further improving the recording density.

Therefore, a magneto-resistance effect type magnetic head (hereinafter, MR head) for reading a signal recorded on a magnetic recording medium by utilizing the magneto-resistance effect of a magneto-resistance effect element (hereinafter, MR element). Has been adopted and widely used.

[0004] An MR element is a type of resistance element, and its electric resistance changes according to a change in an external magnetic field. The MR head is configured to read a magnetic signal recorded on a magnetic recording medium by utilizing a fact that a current value flowing through the MR element changes according to a signal magnetic field from the magnetic recording medium. Since the MR element has high sensitivity to the amount and direction of magnetic flux, the MR head can read a magnetic signal with a high linear density.

FIG. 27 shows an example of such an MR head. FIG. 27 is a front view of the MR head 100 as viewed from the side facing the recording medium. This MR head 100
A hard magnetic film 102 disposed on each end of the MR element 101;
And a magnetoresistive element 104 having a conductor film 103 disposed on the lower magnetic gap 107 by a pair of lower magnetic shields 105 and upper magnetic shields 106.
And an upper magnetic gap 108,
This is a so-called shield type MR head.

Here, the hard magnetic film 102 is
1 is for applying a bias magnetic field to the MR element 101 in order to stabilize the operation, and is made of a hard magnetic material having a high coercive force and is formed on the lower magnetic gap 107 via the base film 102a. Become. In such an MR head 100, as shown in FIG.
In order to make the magnetic coupling between the R element 101 and the hard magnetic film 102 good, the side surface of the MR element 101 has a gentle taper shape, and the hard magnetic film 102 It is formed so as to contact the MR element 101.

In manufacturing such an MR head 100, a so-called lift-off method is used.
The lift-off method is to form a resist pattern on a substrate in advance, apply a film-forming material on the substrate on which the resist pattern is formed, and then remove the resist pattern together with the film-forming material formed thereon. In this method, a film forming material is left in a region other than the region where the resist pattern is formed. That is, in this method, a film can be formed in a desired region without performing etching on the region where the film is formed. The lift-off method may be performed in combination with an etching process for a substrate.

For example, as shown in FIG. 28, when the MR head 100 is manufactured, the lower magnetic gap 107 is formed.
Element 10 formed on non-magnetic insulating film 109 to be
An undercut resist pattern 111 is formed on the main surface of the magnetoresistive film 110 to be 1.
Next, by using the resist pattern 111 as a mask, the magnetoresistive film 110 is etched to form the above-described MR element 101 having a gentle taper shape.

Next, as shown in FIG. 29, a base film 112, a hard magnetic film 113, and a conductor film 114 are sequentially formed on the etched surface, thereby forming the above-described magnetoresistive effect element 104. Is formed.

Then, as shown in FIG. 30, the resist pattern 111 is removed, and the magnetoresistive effect element body 104 is removed.
A non-magnetic insulating film serving as the upper magnetic gap 108 is formed thereon.

In such an MR head 100, when reproducing an information signal from a magnetic recording medium, the magnetic recording medium is run so as to face the MR element 101, and a signal magnetic field from the recording medium is detected by the MR element 101. I do. Here, the detection of the signal magnetic field by the MR element 101 is performed by supplying a sense current to the MR element 101 through the conductor film 103,
This is performed by detecting a voltage change of the sense current.

In the MR head 100, the portion sandwiched between the hard magnetic film 102 and the conductor film 103 has M
It becomes a magnetic sensing part of the R element 101, and the width of that part becomes the reproduction track width of the MR head 100.

[0013]

The above-mentioned M
In the R head 100, in order to cope with high recording density, the lower magnetic shield 105 and the upper magnetic shield 10 are required.
It is necessary to make the interval between the two smaller.

However, in the above-described MR head, the lower magnetic shield 105 and the upper magnetic shield 10
When the distance between the magnetic layer 6 and the magnetic layer 6 is reduced, there is a problem in securing insulation between the lower magnetic shield 105 and the upper magnetic shield 106 and the magnetoresistive element 4. That is, when the lower magnetic shield 105 and the upper magnetic shield 106 cannot be insulated from the magnetoresistive element 104, the output of the MR head decreases, resulting in a decrease in reliability and a decrease in yield. This leads to a significant drop. For example, in a region where the recording density exceeds 40 Gbit / inch ² , the distance between the shields becomes 80 nm or less, and only a gap material of 40 nm or less exists between the magnetoresistive element and the shield. Therefore, the lower magnetic shield 1
05 and the upper magnetic shield 106, and the magnetoresistive effect element 4 and the shield cannot be reliably insulated. Further, when the gap length is short, there is a problem that the signal magnetic field becomes small because the signal magnetic field does not enter the depth of the gap. In order to overcome this problem, attempts have been made to reduce the throat height of the magnetoresistive element to about 0.2 μm.
Since the thickness is about μm, there arises a problem that the production yield is extremely deteriorated. As described above, in the conventional magnetic head, a magnetic head that solves the above-described problem has not yet been developed.

Therefore, the present invention has been proposed in view of such conventional circumstances, and solves the problem of insulation between a magnetic shield and a magnetoresistive effect element, and is capable of coping with a high-density magnetic recording medium. An object of the present invention is to provide a resistance effect type magnetic head and a method of manufacturing the same.

[0016]

According to the magnetic head of the present invention, a first non-magnetic insulating film serving as an upper magnetic shield and a second non-magnetic insulating film serving as a lower magnetic shield comprise a giant magnetoresistive element. And a sense current is supplied perpendicularly to the surface of the giant magnetoresistive element.

In the magnetic head according to the present invention, the upper magnetic shield and the lower magnetic shield also function as electrodes.
A sense current is supplied in a direction perpendicular to the surface of the giant magnetoresistive element. Therefore, the rate of change in resistance is larger than in the case where the sense current is supplied in the in-plane direction of the giant magnetoresistive element, and the reproduced signal is larger.

The magnetic head according to the present invention is characterized in that a contact hole penetrating from the upper magnetic shield to the giant magnetoresistive element is formed, and the contact hole is filled with the upper magnetic shield. I do.

In the magnetic head according to the present invention, a contact hole penetrating from the upper magnetic shield to the giant magnetoresistive element is formed, and the contact hole is filled with the upper magnetic shield. Therefore, in the magnetic head according to the present invention, the upper magnetic shield and the giant magnetoresistive element are electrically connected.

In the method of manufacturing a magnetic head according to the present invention, the upper magnetic shield and the lower magnetic shield are separated from a giant magnetoresistive element (hereinafter, referred to as a GMR element), an etching control film, a hard magnetic layer, and an insulating layer. A method of manufacturing a giant magnetoresistive magnetic head, which is formed by laminating through a film and supplies a sense current in a direction perpendicular to the giant magnetoresistive element surface, wherein the giant magnetoresistive effect is formed on the lower magnetic shield. After forming the element layer, an etching control film forming step of forming the etching control film on the GMR element layer, and a track width regulating mask patterned corresponding to a track width on the etching control film. Arrange
A track width regulating step of regulating a track width by etching the etching control film using this as a mask; an insulating film forming step of forming an insulating film from above after removing the track width regulating mask; A contact hole width regulating mask patterned corresponding to a contact hole width penetrating from the upper magnetic shield to the giant magnetoresistive element is provided thereon, and the insulating film is etched to the etching control film using the mask as a mask. Thus, a contact hole forming step of forming a contact hole and an upper magnetic pole layer forming step of filling a magnetic material so as to fill a concave portion of the contact hole and forming the upper magnetic pole layer are provided.

In the method of manufacturing a magnetic head according to the present invention, an etching control film is formed on the GMR element layer in the etching control film forming step.

Therefore, in the magnetic head according to the present invention, since the etching stops at the etching stop film, the GMR element is not etched.

Then, in the track width regulating step, the track width is regulated using the track width regulating mask.

Therefore, the track width is accurately regulated.

Then, a contact hole regulating mask is provided on the insulating film, a contact hole is formed using the mask as a mask, and the contact hole is filled with a magnetic material.

Therefore, the upper magnetic shield and the GMR element are electrically connected via the etching control film.

[0027]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 shows a composite thin film head in which a giant magnetoresistive magnetic head (hereinafter referred to as a GMR head) to which the present invention is applied and an inductive head are combined.

FIG. 2 is a sectional view of the GMR head portion of the composite thin film head of FIG. 1 on the sliding surface of the magnetic recording medium.
The figure shows an enlarged view of only the vicinity of the part to be a magnetic sensing part.

The GMR head 1 is made of, for example, Al ₂ O ₂ —Ti
It has a structure in which a plurality of thin film layers constituting a head element are laminated on a substrate 2 formed in a substantially parallel plate shape from a hard material such as C or various ceramics. And GMR
The head 1 is used as a read-only magnetic head that reads a magnetic signal recorded on a magnetic recording medium.

The GMR head 1 is a so-called shield type GMR head, and includes a giant magnetoresistive element (hereinafter, referred to as a GMR element) 3 and hard magnetic films respectively disposed on both sides of the GMR element. 4 and
The giant magnetoresistive element 5 (hereinafter, referred to as a GMR element), the lower magnetic shield 6 and the intermediate magnetic shield 7 sandwich the insulating film 8 therebetween. The insulating film 6 has a groove formed on the GMR element 3 from the intermediate magnetic shield 7 to the GMR element 3, and the groove is filled with the intermediate magnetic shield 7.

The GMR head 1 is a vertical GMR head in which the direction of the sense current supplied to the magnetoresistive element is perpendicular to the in-plane direction of the magnetic recording medium.

In the GMR element body 5, the GMR element 3
Is to detect a signal from a magnetic recording medium by a magnetoresistance effect. More specifically, a sense current is supplied to the GMR element 3 via the intermediate shield 7, and a voltage change of the sense current is detected to read a signal recorded on the magnetic recording medium.

As the GMR element 3, a giant magnetoresistive element using a spin valve can be used. Specifically, for example, Ta / NiFe / CoFe / Cu / Co
In the case of a dual type in which a magnetoresistive film made of Fe / InMn / Ta or a spin valve GMR film is laminated in two layers, Ta / PtMn / CoFe / Cu / CoFe
/ NiFe / CoFe / Cu / CoFe / PtMn / T
a) and the like, and are formed by forming these magnetoresistive films on a soft magnetic film to be the lower magnetic shield 6 in this order.

In the magnetoresistive element 5, the hard magnetic film 4 is formed to stabilize the operation of the GMR element 3. The hard magnetic film 4 is made of, for example, CoCrPt.
Made of a hard magnetic material having a high holding power such as Cr
It is formed on the lower layer shield 6 via a base film 4a made of the same. In the magnetoresistive element 5,
As shown in FIG. 1, in order to make the magnetic coupling between the GMR element 3 and the hard magnetic film 4 favorable, the side surface of the GMR element 3 is formed into a gentle taper shape. The magnetic film 4 is formed so as to contact the GMR element 3. Note that the magnetoresistive element 5
In this case, the structure without the hard magnetic film 4 may be adopted.

The lower magnetic shield 6 and the intermediate magnetic shield 7 are formed using a soft magnetic material such as Sendust. The lower magnetic shield 6 is formed on the substrate 2 with a width sufficient to magnetically shield the lower layer of the GMR element 3, and a non-magnetic insulating film 9 is provided at both ends. I have. On the other hand, the intermediate magnetic shield 7 is formed on the insulating film 8.

The lower magnetic shield 6 and the intermediate magnetic shield 7 function to prevent a magnetic field outside the object of reproduction from being drawn into the GMR element 3 among signal magnetic fields from the magnetic recording medium. That is, in the GMR head 1, the signal magnetic field not to be reproduced with respect to the GMR element 3 is guided to the lower magnetic shield 6 and the intermediate magnetic shield 7, and only the signal magnetic field to be reproduced is guided to the GMR element 3. Thereby, in the GMR head 1, the frequency characteristics and the reading resolution of the GMR element 3 are improved.

Next, a method of manufacturing a magnetoresistive head according to the present invention will be described in detail.

First, as shown in FIG. 3, a soft magnetic film 21 serving as a lower magnetic shield of a magnetoresistive head is formed on a substrate 20 whose surface is mirror-finished and sufficiently flattened by sputtering or the like. I do. Here, the substrate 20
A hard material having a large specific resistance is used as a guard material for the GMR element. As a material of the substrate 20,
From the viewpoint of processing properties for example, Al ₂ O ₃ -TiC is suitable, and as the material of the soft magnetic film 21, from the viewpoint of the soft magnetic characteristics, for example, sendust is preferable.

Next, as shown in FIG. 4, the soft magnetic film 21 serving as a lower magnetic shield is etched into a predetermined shape.
Specifically, first, a resist layer is formed on the soft magnetic film 21, then the resist layer is patterned into a predetermined shape, and then the soft magnetic film is patterned using the resist layer patterned into the predetermined shape as a mask. The film 21 is etched. After that, the resist layer is removed. The shape of the soft magnetic film 21 is set to be large enough to magnetically shield the lower layer of the magnetoresistive element formed in a later step. Examples of soft magnetic film materials include sendust, NiFe alloy, FeSiAl alloy, amorphous C
A material such as an oZrNb alloy can be suitably used.

Next, as shown in FIG. 5, a nonmagnetic insulating film 22 is formed by sputtering or the like so as to cover the soft magnetic film 21 having a predetermined shape. Here, as the material of the non-magnetic insulating film 22, for example, Al ₂ O ₃ or SiO ₂ is preferable from the viewpoint of insulating properties and wear resistance.

Next, as shown in FIG.
2 is polished until the surface of the soft magnetic film 21 is exposed.

Next, as shown in FIG. 7, a magnetoresistive film 23 serving as a GMR element is formed on the soft magnetic film 21 and the nonmagnetic insulating film 22. In the present invention, GMR
As the element, a GMR element using a spin valve can be used. For example, when the magnetoresistive effect film 23 is a dual type in which two spin valve GMR films are stacked, Ta / PtMn / CoFe / Cu / CoFe
/ NiFe / CoFe / Cu / CoFe / PtMn / T
a / Cr is formed by sequentially forming a film by sputtering in this order. Here, the Cr film has not only a function as a protective film of the GMR element 3 but also a function as an etching control film when forming a contact hole described later.

First, as shown in FIG. 8, a resist layer 24 is formed on the magnetoresistive film 23. Here, when the resist layer 24 is formed, first, a first resist 24a made of a non-photosensitive resin soluble in a developing solution is thinly applied, and then a heat treatment is performed.
a is cured. Next, a second resist 24b made of a resin having photosensitivity is thickly applied on the first resist 24a, and thereafter, a pre-bake process is performed on the second resist 24b. Note that the first resist 24a has
A resist having a high dissolution rate when dissolved by a developer is used, and a second resist 24b having a low dissolution rate when dissolved by a developer is used.

Next, as shown in FIGS. 9 and 10, the resist layer 24 is patterned into a predetermined shape by using a photolithography technique. Here, when patterning the resist layer 24 into a predetermined shape, first, the resist layer 24 is exposed so as to correspond to a desired pattern. Next, the exposed portion of the resist layer 24 is dissolved and removed with a developing solution, and then post-baking is performed. As a result, the exposed portion of the resist layer 24 is removed, and FIG.
As shown in (1), a resist layer 24 having a predetermined shape is obtained. In the present invention, in this step, the width of the GMR element is regulated. Note that the element width is different from the track width at the time of signal reproduction.

Here, the resist layer 24 is formed of a first resist 24 having a high dissolution rate when dissolved by a developer.
a and a second resist 24b having a slow dissolution rate when dissolved by a developer. Therefore, in the resist layer 24, the portion of the first resist 24a, which is the lower layer, is more etched by the developer than the second resist 24b, which is the upper layer,
As shown in FIG. 10, the lower layer has an undercut shape in which the lower layer bites inward. In the resist layer 24, the second resist 24b, which is the upper layer, is patterned so as to have a trapezoidal cross section as shown in FIG.

Note that, as shown in FIG.
In the formation of the resist layer 24, the size of the portion that is cut into the lower layer of the resist layer 24 can be adjusted by adjusting the heat treatment conditions for the first resist 24a, the development time of the resist layer 24, and the like. Can be controlled.

Next, as shown in FIG. 11, using the resist layer 24 patterned in a predetermined shape as a mask, the magnetoresistive film 23 is etched. Here, ion etching can be used for the etching. GMR
It is preferable that the contact surface between the element 3 and a hard magnetic film 24 described later has a steep gradient with respect to the substrate. Therefore, when the incident angle when the incidence of ions on the substrate is perpendicular is defined as 0 degree, the incidence angle of ions during ion etching is preferably 5 to 30 degrees. At this time, in the resist layer 24, since the cross-sectional shape of the second resist 24b, which is the upper layer portion, is trapezoidal, the side surface portion of the magnetoresistive film 23 etched using the resist layer 24 as a mask is As shown in FIG. 10, the shape has a slight taper.

Next, as shown in FIGS. 12 and 13, a hard magnetic film 4 made of a magnetic material having a high coercive force is formed in this order by sputtering or the like while leaving the resist layer 24. In this example, since the hard magnetic film 4 only contributes to stabilization of the magnetoresistive effect element, the contact surface between the GMR element 3 and the hard magnetic film 4 preferably has a steep gradient.

The hard magnetic film 4 is made of, for example, Cr
Is formed to a thickness of 5 nm, and CoCrPt is
It is formed by sequentially forming a film to a thickness of nm by sputtering or the like. Thus, the GMR element body 5 is formed.

In this embodiment, since the side surface of the magnetoresistive film 23 has a slight taper,
The area of the contact portion between the magnetoresistive film and the 23 hard magnetic film 4 is larger than that in the case where the side surface of the magnetoresistive film 23 stands vertically. As described above, the side surfaces of the magnetoresistive film 23 are tapered, and the area of the contact portion between the magnetoresistive film 23 and the hard magnetic film 4 is increased. The magnetic coupling state is good. As a result, the effect of stabilizing the operation of the magnetoresistive element by the hard magnetic film 4 is higher, and the operation of the magnetoresistive element can be more stable.

Next, as shown in FIGS. 14 and 15, the resist layer 24 is removed. Thereby, the hard magnetic film 4 is formed in the magnetoresistive film 23 in a predetermined shape.

Next, as shown in FIGS. 16 and 17, an insulating film 25 made of an insulating material is formed by sputtering or the like. The material of the insulating film 25 is, for example, Si
O ₂ and Al ₂ O ₃ are suitable, and the thickness of the insulating film and the thickness is preferably 0.1 to 0.2 μm.

Next, as shown in FIG. 18, a Cr film 26 serving as a mask for patterning a contact hole described later is formed on the insulating film 25 by sputtering or the like. The thickness of the Cr film 26 is, for example, 50 nm. Further, the configuration may be such that the Cr film 26 is not provided.

Next, a contact hole 28 is formed.
Specifically, first, as shown in FIG. 19 and FIG.
An electron beam resist layer 27 is formed on the r film 26, and then the electron beam resist layer 27 is patterned into a predetermined shape using an electron beam. Next, as shown in FIG. 21, the Cr film 26 is etched using the electron beam resist layer 27 patterned into a predetermined shape as a mask. For the etching, for example, ion etching using Ar gas can be used. Further, as shown in FIG. 22, the SiO ₂ is etched using the electron beam resist layer 27 as a mask. As the etching, for example, reactive ion etching can be used. Here, the etching stops at the Cr film which is an etching control film formed on the GMR element 3, so that the GMR element 3 is not etched. Here, the Cr film has not only a function as a protective film of the GMR element 3 but also a function as an etching control film for stopping etching at a predetermined portion when etching the SiO ₂ and forming the contact hole 28. . Here, the contact hole 28 is 0.1 to
Preferably, it is formed in a size of about 0.2 μm × 1 μm. This is because, by forming the contact hole 28 to have a size of about 0.15 μm × 1 μm, the range of variation in depth polishing is increased (the depth direction where the contact hole exists at zero depth is 1 μm at maximum). Finally, as shown in FIGS. 23 and 24, the electron beam resist layer 27 is removed, and a contact hole 28 is formed. In the GMR head of the present invention, the width of the contact hole on the surface facing the recording medium is the reproduction execution track width. Therefore, the width of the reproduction execution track can be regulated by regulating the width of the contact hole on the surface facing the recording medium. That is, the reproduction execution track width can be accurately regulated by the above-described method.

Next, as shown in FIGS. 25 and 26, a soft magnetic film 29 serving as an intermediate magnetic shield of the magnetoresistive head is formed by plating or the like. Here, the material of the intermediate magnetic shield 7 is also filled in the contact hole 29 formed as described above. As a result, the intermediate magnetic shield 7 has a protruding shape at the portion of the contact hole, and comes into contact with the GMR element 3 at this portion.
Are electrically connected. Here, the material of the soft magnetic film 29 is, for example, Ni-Fe from the viewpoint of soft magnetic characteristics and the like.
A base alloy is preferred.

With the above steps, the thin film process for manufacturing the GMR head 1 is completed. Thereafter, the side surface on which the GMR element is formed is polished until the end of the GMR element 3 is exposed, or machine processing such as cutting out the GMR head 1 from the substrate 1 into a predetermined shape is performed. Thereby, the GMR head 1 is completed.

In order to form an inductive magnetic head on the GMR head 1, the intermediate magnetic shield 7 of the magnetoresistive head is used as a lower magnetic core of the inductive magnetic head. On the magnetic core, a magnetic gap film, a thin-film coil, an upper magnetic core, and the like constituting the inductive magnetic head may be formed. These steps can be performed by known means.

In the GMR head 1, the surface on the side where the end of the GMR element 3 is exposed is the recording medium facing surface. That is, when an information signal is reproduced from a recording medium using the GMR head 1, the recording medium is caused to travel so that the end of the GMR element 3 faces the exposed surface, and the signal magnetic field from the recording medium is transmitted. With G having an end exposed on the recording medium facing surface.
It is detected by the MR element 3. The detection of the signal magnetic field by the GMR element 3 is performed by the GM through the intermediate magnetic shield 7.
This is performed by supplying a sense current to the R element 3 in a direction perpendicular to the plane of the GMR element 3 and detecting a voltage change of the sense current. Therefore, the sense current is set to GM
Since the rate of change in resistance is larger than in the case where the signal is supplied in the in-plane direction of the R element 3, the reproduced signal is increased.

In the GMR head 1, since the intermediate magnetic shield 7 and the lower magnetic shield 6 also function as electrodes, there is no problem of insulation between the shield and the GMR element 3. In the GMR head 1, since the sense current is supplied perpendicularly to the plane of the GMR element 3 through the intermediate magnetic shield 7, there is no need to insulate the GMR element 3 from the lower magnetic shield 6. Therefore, usually, two required insulating layers are used for the GMR element 3.
And the intermediate magnetic shield 7 has only one layer for insulation. In addition, the thickness of the insulating layer can be made sufficiently large so as not to affect the reproduction characteristics. Therefore, there is no occurrence of element failure due to insulation failure.

In the GMR head 1, since the intermediate magnetic shield 7 and the lower magnetic shield 6 also have the function of an electrode, there is no need to form an electrode, and the manufacturing process is simplified.

In the GMR head 1, the hard magnetic film 4 does not function to supply a sense current to the GMR element 3, so that the production yield is improved.

In the GMR head 1, the width W of the contact hole in FIG. 24, that is, the width of the contact hole in the medium facing surface of the GMR head 1 is the reproduction track width. In other words, in the steps shown in FIGS. 20 to 22, the Cr film 26 is formed using the resist layer 27 as a mask.
And by etching the insulating film 25, the GM
The reproduction track width of the R head 1 is defined. Since the GMR head 1 uses the electron beam resist layer 27 and the Cr film 26 when forming the above-described contact holes, fine processing is possible and a track width of 0.2 μm or less is formed. It is possible to do.

In the GMR head 1 manufactured as described above, the intermediate magnetic shield 7 and the lower magnetic shield 6 also have the function of an electrode.
A sense current is supplied to the lower magnetic shield 6 through the R element 3. Specifically, the sense current flows from the intermediate shield to the GMR element 3 via a portion protruding at the position of the contact hole of the intermediate magnetic shield, and flows to the lower magnetic shield. Further, the direction in which the sense current flows may be a direction opposite to the above-described direction. Therefore, there is no problem of insulating property between the magnetoresistive element of the manufactured GMR head 1 and the magnetic shield.

As a result, in the GMR head 1, the distance between the lower magnetic shield 6 and the intermediate magnetic shield 7 can be reduced. That is, by using the GMR head 1, it is possible to cope with a higher recording density.

Therefore, a magnetoresistive head having improved reliability can be manufactured, and productivity can be greatly improved.

In the thin film process for fabricating the GMR head, when forming the undercut resist layer 24, two resists having different dissolution rates in a developing solution are laminated and used, that is, a so-called two-layer resist method. However, the undercut-shaped resist layers 24a,
4b can also be formed with a single resist layer.

When the single-layer resist layer has an undercut shape, first, a photosensitive resist is applied to form a single-layer resist layer, and then the resist layer is subjected to a pre-bake treatment. Apply. Next, the resist layer is exposed so as to correspond to a desired pattern, and thereafter, the resist layer is subjected to a baking process. The baking process here is a process for accelerating the dissolution rate of the lower layer of the resist layer in the developing solution. Next, the exposed portion of the resist layer is dissolved and removed with a developing solution, and then post-baking is performed. As a result, the exposed portion of the resist layer is removed, and the resist layer has a predetermined shape.

When the resist layer is formed as described above,
After exposure of the resist layer, the resist layer is baked to increase the dissolution rate of the lower layer, so that when the resist layer is developed with a developer, the lower layer of the resist layer is more developed than the upper layer. More etching by liquid. Therefore, as in the case of the resist layer 24 shown in FIG. 10, an undercut resist layer in which the lower layer portion is cut inward is obtained.

The GMR manufactured by applying the present invention
The head can be widely used in the field of magnetic recording, and can be used, for example, in a magnetic recording / reproducing apparatus using a flexible disk as a recording medium or a magnetic recording / reproducing apparatus using a magnetic tape as a recording medium.

The present invention is not limited to the above description, and can be appropriately changed without departing from the gist of the present invention.

[0072]

As described above in detail, the magnetic head according to the present invention is formed by laminating an upper magnetic shield and a lower magnetic shield via a giant magnetoresistive effect element, and the sense current is reduced by the giant magnetism. It is supplied in the direction perpendicular to the surface of the resistance effect element.

That is, the upper magnetic shield and the lower magnetic shield also function as electrodes, and supply a sense current in a direction perpendicular to the surface of the giant magnetoresistive element.
Therefore, there is no need to insulate the upper magnetic shield and the lower magnetic shield from the giant magnetoresistive element, and the resistance change rate is larger than when the sense current is supplied in the in-plane direction of the giant magnetoresistive element. Therefore, the reproduced signal becomes large. Therefore, even when the magnetic signal is small, it is possible to reliably read the magnetic signal with a high linear density.And, the magnetic head according to the present invention is capable of reading the magnetic signal from the upper magnetic shield to the giant magnetoresistive element. A penetrating contact hole is formed, and the contact hole is filled with the upper magnetic shield.

That is, since the upper magnetic shield, the magnetoresistive element, and the lower magnetic shield are electrically connected, there is no problem of insulation between the magnetic shield and the giant magnetoresistive element. As a result, the distance between the upper magnetic shield and the lower magnetic shield can be reduced.

Therefore, according to the present invention, it is possible to provide a magnetic head which can solve a problem of insulating property between a magnetic shield and a giant magnetoresistive element and which can support a high density magnetic recording medium.

An upper magnetic shield is formed on the magnetoresistive element so as to protrude so as to contact the magnetoresistive element.

According to the method of manufacturing a magnetic head of the present invention, the upper magnetic shield is formed on the magnetoresistive element so as to protrude so as to contact the magnetoresistive element. As a result, the upper magnetic shield, the magnetoresistive element, and the lower magnetic shield are electrically connected,
There is no problem of insulation between the magnetic shield and the magnetoresistive element. That is, the distance between the upper magnetic shield and the lower magnetic shield can be further reduced, and it is possible to cope with higher recording density.

Therefore, according to the present invention, it is possible to manufacture a magneto-resistance effect type magnetic head with improved reliability, and it is possible to greatly improve productivity.

[Brief description of the drawings]

FIG. 1 is a diagram showing a configuration example of a magneto-resistance effect type magnetic head to which the present invention is applied, and is a perspective view of a magneto-resistance effect type magnetic head viewed from a surface facing a magnetic recording medium.

FIG. 2 is a sectional view showing an essential part of the composite thin film magnetic head of FIG. 1;

FIG. 3 is a cross-sectional view showing a state in which a soft magnetic film serving as a lower magnetic shield is formed on a substrate, sequentially showing a manufacturing process of the magneto-resistance effect type magnetic head.

FIG. 4 is a cross-sectional view showing a state in which a soft magnetic film serving as a lower magnetic shield is etched into a predetermined shape, sequentially showing manufacturing steps of the magneto-resistance effect type magnetic head.

FIG. 5 is a cross-sectional view illustrating a state in which a non-magnetic insulating film is formed on a soft magnetic film serving as a lower magnetic shield, in order, sequentially illustrating manufacturing steps of the magneto-resistance effect type magnetic head.

FIG. 6 is a cross-sectional view showing the steps of manufacturing the magnetoresistive effect type magnetic head in sequence, showing a state where the nonmagnetic insulating film is polished until the surface of the soft magnetic film is exposed.

FIG. 7 is a cross-sectional view showing a state in which a magneto-resistance effect film serving as a magneto-resistance effect element is formed, sequentially illustrating a manufacturing process of the magneto-resistance effect type magnetic head.

FIG. 8 is a cross-sectional view showing a state in which a resist layer is formed, sequentially illustrating the steps of manufacturing the magneto-resistance effect type magnetic head.

FIG. 9 is a view sequentially showing a manufacturing process of the magnetoresistive head, and is a perspective view showing a state where a resist layer is patterned into a predetermined shape.

FIG. 10 is a cross-sectional view showing a state in which the resist layer is patterned into a predetermined shape, sequentially showing the manufacturing steps of the magneto-resistance effect type magnetic head.

FIG. 11 is a cross-sectional view showing a state in which the magnetoresistive effect film is etched, sequentially showing the steps of manufacturing the magnetoresistive effect type magnetic head.

FIG. 12 is a view sequentially showing a method of manufacturing the same magnetoresistive effect type magnetic head, and is a perspective view showing a state where a hard magnetic film is formed.

FIG. 13 is a cross-sectional view showing a state in which a hard magnetic film is formed, sequentially illustrating a method for manufacturing the same magneto-resistance effect type magnetic head.

FIG. 14 is a view sequentially showing a method of manufacturing the same magnetoresistive effect type magnetic head, and is a perspective view showing a state where a resist layer is removed.

FIG. 15 is a cross-sectional view showing a state in which the resist layer is removed, sequentially illustrating the method of manufacturing the same magnetoresistive effect type magnetic head.

FIG. 16 is a view sequentially showing a method of manufacturing the same magnetoresistive effect type magnetic head, and is a perspective view showing a state where an insulating film is formed.

FIG. 17 is a sectional view sequentially showing a method of manufacturing the same magnetoresistive effect type magnetic head, and showing a state where insulation is formed.

FIG. 18 is a cross-sectional view showing a state in which a Cr film is formed, sequentially illustrating a method of manufacturing the same magneto-resistance effect type magnetic head.

FIG. 19 is a view sequentially showing the method of manufacturing the same magnetoresistive head, and is a perspective view showing a state in which an electron beam resist is formed and patterned into a predetermined shape.

FIG. 20 is a cross-sectional view showing a state in which an electron beam resist is formed and patterned into a predetermined shape, sequentially showing a method of manufacturing the same magneto-resistance effect type magnetic head.

FIG. 21 is a sectional view sequentially showing a method of manufacturing the same magnetoresistive effect type magnetic head, and showing a state where a Cr film is etched.

FIG. 22 is a sectional view sequentially showing a method of manufacturing the same magneto-resistance effect type magnetic head, showing a state where SiO ₂ is etched;

FIG. 23 is a view sequentially showing the method of manufacturing the same magneto-resistance effect type magnetic head, and is a perspective view showing a state in which an electron beam resist is removed and a contact hole is formed.

FIG. 24 is a sectional view sequentially showing the method of manufacturing the same magnetoresistive effect type magnetic head, showing a state in which an electron beam resist has been removed and a contact hole has been formed.

FIG. 25 is a view sequentially showing the method of manufacturing the same magneto-resistance effect type magnetic head, and is a perspective view showing a state in which a soft magnetic film is formed.

FIG. 26 is a cross-sectional view showing a state in which a soft magnetic film is formed, sequentially illustrating a method of manufacturing the same magneto-resistance effect type magnetic head.

FIG. 27 is a diagram showing a configuration example of a conventional shield type magnetoresistive magnetic head, and is a cross-sectional view of a magnetoresistive magnetic head viewed from a surface facing a magnetic recording medium.

FIG. 28 is a cross-sectional view showing a step of manufacturing the magneto-resistance effect type magnetic head in order, and showing a state where the magneto-resistance effect film is etched using the resist pattern as a mask.

FIG. 29 is a cross-sectional view showing a state in which a hard magnetic film and a conductor film are formed with a resist pattern left, while sequentially showing the manufacturing process of the magnetoresistive head.

FIG. 30 is a sectional view sequentially showing the manufacturing process of the same magnetoresistive effect type magnetic head, in which a resist pattern is removed and a nonmagnetic insulating film serving as an upper magnetic gap is formed.

[Explanation of symbols]

1 giant magnetoresistive head, 2 substrate, 3 giant magnetoresistive element, 4 hard magnetic film, 6 lower magnetic shield,
7 Intermediate magnetic shield, 8 Insulating film, 9 Upper magnetic shield

Claims (6)

[Claims] A first non-magnetic insulating film serving as an upper magnetic shield and a second non-magnetic insulating film serving as a lower magnetic shield are laminated with a giant magneto-resistive element interposed therebetween, and a sense current is increased. A giant magnetoresistive magnetic head characterized in that the magnetic head is supplied in a direction perpendicular to the magnetoresistive element surface. 2. A contact hole penetrating from the upper magnetic shield to the giant magnetoresistive element,
2. A giant magnetoresistive magnetic head according to claim 1, wherein said contact hole is filled with said upper magnetic shield. 3. A giant magnetoresistive element, an etching control film, a hard magnetic layer, an insulating film, and a first nonmagnetic insulating film serving as an upper magnetic shield and a second nonmagnetic insulating film serving as a lower magnetic shield. A method for manufacturing a giant magnetoresistive magnetic head, which is formed by laminating through and supplies a sense current in a direction perpendicular to the surface of the giant magnetoresistive element, wherein the giant magnetoresistive element layer is formed on the lower magnetic shield. Forming an etching control film on the giant magnetoresistive element layer, and a track width regulating mask patterned on the etching control film in accordance with a track width. A track width regulating step of regulating the track width by etching the etching control film using the mask as a mask; and excluding the track width regulating mask. An insulating film forming step of forming an insulating film from above, and a contact hole width regulation patterned on the insulating film corresponding to a contact hole width penetrating from the upper magnetic shield to the giant magnetoresistive element. A contact hole forming step of forming a contact hole by arranging a mask and etching the insulating film up to the etching control film using the mask as a mask; filling a magnetic material so as to fill a concave portion of the contact hole; Forming an upper magnetic pole layer for forming a magnetic pole layer. 4. The method according to claim 3, wherein the etching control film is made of Cr. 5. The method of manufacturing a magnetic head according to claim 3, wherein the magnetic head is a vertical giant magnetoresistive head for flowing a sense current in a direction perpendicular to the surface of the giant magnetoresistive element. . 6. The method according to claim 3, wherein the insulating film is made of SiO ₂ .