WO2003005442A3 - Vorrichtung und verfahren zum messen von betriebstemperaturen eines elektrischen bauteils - Google Patents

Vorrichtung und verfahren zum messen von betriebstemperaturen eines elektrischen bauteils Download PDF

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Publication number
WO2003005442A3
WO2003005442A3 PCT/DE2002/002210 DE0202210W WO03005442A3 WO 2003005442 A3 WO2003005442 A3 WO 2003005442A3 DE 0202210 W DE0202210 W DE 0202210W WO 03005442 A3 WO03005442 A3 WO 03005442A3
Authority
WO
WIPO (PCT)
Prior art keywords
breakdown
component
operating temperatures
electrical component
measuring operating
Prior art date
Application number
PCT/DE2002/002210
Other languages
English (en)
French (fr)
Other versions
WO2003005442A2 (de
Inventor
Henning Hauenstein
Markus Baur
Original Assignee
Bosch Gmbh Robert
Henning Hauenstein
Markus Baur
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert, Henning Hauenstein, Markus Baur filed Critical Bosch Gmbh Robert
Priority to US10/481,761 priority Critical patent/US7121721B2/en
Priority to JP2003511309A priority patent/JP4373206B2/ja
Priority to EP02754223A priority patent/EP1407489A2/de
Publication of WO2003005442A2 publication Critical patent/WO2003005442A2/de
Publication of WO2003005442A3 publication Critical patent/WO2003005442A3/de

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/27—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements
    • G01R31/275—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements for testing individual semiconductor components within integrated circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G01R31/2603—Apparatus or methods therefor for curve tracing of semiconductor characteristics, e.g. on oscilloscope
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Electric Properties And Detecting Electric Faults (AREA)

Abstract

Die Erfindung schafft eine Vorrichtung und ein Verfahren zum Messen von Betriebstemperaturen Tj eines Bauteils, insbesondere transienter Temperaturen Tj im Durchbruchbereich des Bauteils (2) während eines Durchbruchbetriebes, wobei aus einer Messung der Durchbruchspannung Ud und des Durchbruchstromes I des Bauteils (2) zu einem bestimmten Zeitpunkt ti während des Durchbruchbetriebes mittels einer Messeinrichtung die Bauteiltemperatur Tj zum Zeitpunkt ti durch Vergleichen der Messdaten mit vorab aufgenommenen Referenzmessdaten ermittelbar ist.
PCT/DE2002/002210 2001-07-04 2002-06-18 Vorrichtung und verfahren zum messen von betriebstemperaturen eines elektrischen bauteils WO2003005442A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US10/481,761 US7121721B2 (en) 2001-07-04 2002-06-18 Apparatus and method for measuring operating temperatures of an electrical component
JP2003511309A JP4373206B2 (ja) 2001-07-04 2002-06-18 電気的構成素子の動作温度を測定するための装置および方法
EP02754223A EP1407489A2 (de) 2001-07-04 2002-06-18 Vorrichtung und verfahren zum messen von betriebstemperaturen eines elektrischen bauteils

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10132452.9 2001-07-04
DE10132452A DE10132452B4 (de) 2001-07-04 2001-07-04 Vorrichtung und Verfahren zum Messen von Betriebstemperaturen eines elektrischen Bauteils

Publications (2)

Publication Number Publication Date
WO2003005442A2 WO2003005442A2 (de) 2003-01-16
WO2003005442A3 true WO2003005442A3 (de) 2003-10-02

Family

ID=7690607

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/002210 WO2003005442A2 (de) 2001-07-04 2002-06-18 Vorrichtung und verfahren zum messen von betriebstemperaturen eines elektrischen bauteils

Country Status (5)

Country Link
US (1) US7121721B2 (de)
EP (1) EP1407489A2 (de)
JP (1) JP4373206B2 (de)
DE (1) DE10132452B4 (de)
WO (1) WO2003005442A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7255476B2 (en) * 2004-04-14 2007-08-14 International Business Machines Corporation On chip temperature measuring and monitoring circuit and method
DE102007007007A1 (de) * 2007-02-08 2008-08-14 Endress + Hauser Gmbh + Co. Kg Vorrichtung zur Bestimmung und/oder Überwachung einer Prozessgröße
US8449173B1 (en) * 2008-04-10 2013-05-28 Google Inc. Method and system for thermal testing of computing system components
US8419273B2 (en) * 2010-05-03 2013-04-16 Sharp Kabushiki Kaisha Array element for temperature sensor array circuit, temperature sensor array circuit utilizing such array element, and AM-EWOD device including such a temperature sensor array circuit
EP3627121B1 (de) * 2018-09-21 2022-07-06 Maschinenfabrik Reinhausen GmbH Bestimmen einer charakteristischen temperatur eines elektrischen oder elektronischen systems
DE102022201327A1 (de) 2022-02-09 2023-08-10 Zf Friedrichshafen Ag Temperaturbestimmung einer Halbbrücke
EP4290251A1 (de) * 2022-06-10 2023-12-13 Nexperia B.V. Verfahren zum testen einer halbleiteranordnung sowie entsprechende testvorrichtung
CN115015731B (zh) * 2022-08-08 2022-10-04 北京芯可鉴科技有限公司 器件击穿电压确定方法、装置、芯片、电子设备及介质

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4104376A1 (de) * 1991-02-08 1992-08-13 Zentralinstitut Fuer Elektrone Verfahren und schaltungsanordnung zur messung des thermischen widerstandes und der transienten waermeimpedanz von thyristoren
US5401099A (en) * 1992-02-10 1995-03-28 Sumitomo Electric Industries, Ltd. Method of measuring junction temperature
DE19652046A1 (de) * 1996-12-13 1998-06-18 Siemens Ag Verfahren zur Ermittlung der Temperatur eines Halbleiter-Chips

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1324059A (en) * 1972-02-03 1973-07-18 Standard Telephones Cables Ltd Temperature measuring devices
DE2315322C3 (de) * 1973-03-23 1979-11-29 Siemens Ag, 1000 Berlin Und 8000 Muenchen Einrichtung zur Erfassung dielektrischer Durchschläge in metallgekapselten Hochspannungsschalt- und -Übertragungsanlagen
US4185253A (en) * 1978-09-27 1980-01-22 Eaton Corporation Temperature sensitive relaxation oscillator
GB8523683D0 (en) * 1985-09-25 1985-10-30 Imi Pactrol Temperature sensor
US4730228A (en) * 1986-03-21 1988-03-08 Siemens Aktiengesellschaft Overtemperature detection of power semiconductor components
JPS6321763A (ja) * 1986-07-15 1988-01-29 Meidensha Electric Mfg Co Ltd 電解液循環形積層電池
JPH03186775A (ja) * 1989-12-15 1991-08-14 Matsushita Electric Works Ltd 耐圧特性測定法
DE4324982A1 (de) * 1993-07-26 1995-02-02 Abb Management Ag Verfahren und Schaltungsanordnung zur Messung der Sperrschichttemperatur eines GTO-Thyristors
JP3789220B2 (ja) * 1997-12-25 2006-06-21 松下電器産業株式会社 絶縁膜評価方法および装置ならびにプロセス評価方法
DE10061371B4 (de) * 2000-12-09 2004-04-08 Infineon Technologies Ag Schaltungsanordnung mit einer steuerbaren Strombegrenzungsschaltung zur Ansteuerung einer Last
DE10119599A1 (de) * 2001-04-21 2002-10-31 Bosch Gmbh Robert Verfahren zur Bestimmung von Temperaturen an Halbleiterbauelementen
US6933741B2 (en) * 2003-11-13 2005-08-23 Texas Instruments Incorporated Electrostatic discharge testers for undistorted human-body-model and machine-model characteristics

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4104376A1 (de) * 1991-02-08 1992-08-13 Zentralinstitut Fuer Elektrone Verfahren und schaltungsanordnung zur messung des thermischen widerstandes und der transienten waermeimpedanz von thyristoren
US5401099A (en) * 1992-02-10 1995-03-28 Sumitomo Electric Industries, Ltd. Method of measuring junction temperature
DE19652046A1 (de) * 1996-12-13 1998-06-18 Siemens Ag Verfahren zur Ermittlung der Temperatur eines Halbleiter-Chips

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
"DESIGN '88-OPTIMIZED SIPMOS POWER TRANSISTORS", COMPONENTS, SIEMENS AKTIENGESELLSCHAFT. MUNCHEN, DE, vol. 23, no. 4, 1 September 1988 (1988-09-01), pages 170, XP000006283, ISSN: 0945-1137 *
TAILLIET F ET AL: "CHARACTERIZATION OF A N-P-N STRUCTURE UNDER ESD STRESS AND PROPOSED ELECTRICAL MODEL", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE INC. NEW YORK, US, vol. 37, no. 4, 1 April 1990 (1990-04-01), pages 1111 - 1120, XP000125228, ISSN: 0018-9383 *

Also Published As

Publication number Publication date
DE10132452B4 (de) 2005-07-28
JP2004534238A (ja) 2004-11-11
WO2003005442A2 (de) 2003-01-16
EP1407489A2 (de) 2004-04-14
US20040208227A1 (en) 2004-10-21
JP4373206B2 (ja) 2009-11-25
DE10132452A1 (de) 2003-01-30
US7121721B2 (en) 2006-10-17

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