WO2002095821A3 - Gehäuse für einen photoaktiven halbleiterchip und verfahren zu dessen herstellung - Google Patents

Gehäuse für einen photoaktiven halbleiterchip und verfahren zu dessen herstellung Download PDF

Info

Publication number
WO2002095821A3
WO2002095821A3 PCT/DE2002/001897 DE0201897W WO02095821A3 WO 2002095821 A3 WO2002095821 A3 WO 2002095821A3 DE 0201897 W DE0201897 W DE 0201897W WO 02095821 A3 WO02095821 A3 WO 02095821A3
Authority
WO
WIPO (PCT)
Prior art keywords
housing
semiconductor chip
production
photoactive semiconductor
ceramic base
Prior art date
Application number
PCT/DE2002/001897
Other languages
English (en)
French (fr)
Other versions
WO2002095821A2 (de
Inventor
Stefan Groetsch
Original Assignee
Osram Opto Semiconductors Gmbh
Stefan Groetsch
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh, Stefan Groetsch filed Critical Osram Opto Semiconductors Gmbh
Priority to US10/479,008 priority Critical patent/US7115962B2/en
Priority to JP2002592187A priority patent/JP2004527917A/ja
Publication of WO2002095821A2 publication Critical patent/WO2002095821A2/de
Publication of WO2002095821A3 publication Critical patent/WO2002095821A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Abstract

In einem Verfahren zur Herstellung eines Keramikgehäuses (1) wird zunächst ein Keramikgrundkörper (4) aus einem Keramikboden (2) und aus Seitenteilen (3) hergestellt. Anschliessend wird auf den Keramikgrundkörper (4) ein Metallrahmen (7) aufgebracht und ein Fenster (11) auf eine Seitenöffnung (6) aufgelötet. Das Keramikgehäuse (1) wird nach Einbringen eines photoaktiven Halbleiterchips in den Keramikgrundkörper (4) mit einem Metalldeckel (12) verschlossen.
PCT/DE2002/001897 2001-05-23 2002-05-23 Gehäuse für einen photoaktiven halbleiterchip und verfahren zu dessen herstellung WO2002095821A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/479,008 US7115962B2 (en) 2001-05-23 2002-05-23 Housing for a photoactive semiconductor chip and a method for the production thereof
JP2002592187A JP2004527917A (ja) 2001-05-23 2002-05-23 光活性半導体チップ用ケーシング及び該ケーシングの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10125374.5 2001-05-23
DE10125374A DE10125374C1 (de) 2001-05-23 2001-05-23 Gehäuse für einen elektromagnetische Strahlung emittierenden Halbleiterchip und Verfahren zu dessen Herstellung

Publications (2)

Publication Number Publication Date
WO2002095821A2 WO2002095821A2 (de) 2002-11-28
WO2002095821A3 true WO2002095821A3 (de) 2003-10-09

Family

ID=7686013

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/001897 WO2002095821A2 (de) 2001-05-23 2002-05-23 Gehäuse für einen photoaktiven halbleiterchip und verfahren zu dessen herstellung

Country Status (4)

Country Link
US (1) US7115962B2 (de)
JP (1) JP2004527917A (de)
DE (1) DE10125374C1 (de)
WO (1) WO2002095821A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008017580A1 (de) * 2008-04-07 2009-10-08 Osram Opto Semiconductors Gmbh Gehäuseanordnung
JP4492733B2 (ja) * 2008-05-27 2010-06-30 ソニー株式会社 発光装置及び発光装置の製造方法
KR101124102B1 (ko) * 2009-08-24 2012-03-21 삼성전기주식회사 발광 소자 패키지용 기판 및 이를 포함하는 발광 소자 패키지
CN105977217A (zh) * 2016-06-29 2016-09-28 广州崇亿金属制品有限公司 封装器件
DE102016116439A1 (de) 2016-09-02 2018-03-08 Osram Opto Semiconductors Gmbh Anordnung mit einem Gehäuse mit einem strahlungsemittierenden optoelektronischen Bauelement
DE102017123413B4 (de) 2017-10-09 2023-09-14 Osram Gmbh Optoelektronisches Halbleiterbauteil und Herstellungsverfahren für ein optoelektronisches Halbleiterbauteil
DE102020215033A1 (de) 2020-11-30 2022-06-02 Robert Bosch Gesellschaft mit beschränkter Haftung Laserdiodenvorrichtung

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987002833A1 (en) * 1985-10-28 1987-05-07 American Telephone & Telegraph Company Multilayer ceramic laser package
JPH06151629A (ja) * 1992-11-12 1994-05-31 Shinko Electric Ind Co Ltd 光透過用ウィンドを備えたパッケージ
JPH08316503A (ja) * 1995-05-15 1996-11-29 Kyocera Corp 光素子収納用パッケージ
JPH10275873A (ja) * 1997-03-31 1998-10-13 Kyocera Corp 光半導体素子収納用パッケージ
JPH11176017A (ja) * 1997-12-12 1999-07-02 Sony Corp 光学ピックアップ及び光ディスク装置
JP2000223605A (ja) * 1999-01-28 2000-08-11 Ngk Spark Plug Co Ltd セラミックパッケージ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6113677A (ja) 1984-06-28 1986-01-21 Kyocera Corp 光半導体用パツケ−ジの製造方法
JP3067151B2 (ja) * 1990-03-13 2000-07-17 日本電気株式会社 光電気変換素子サブキャリア
US5841178A (en) * 1996-10-04 1998-11-24 Lucent Technologies Inc. Optical component package
US6420205B1 (en) * 1999-03-24 2002-07-16 Kyocera Corporation Method for producing package for housing photosemiconductor element
US6531341B1 (en) * 2000-05-16 2003-03-11 Sandia Corporation Method of fabricating a microelectronic device package with an integral window

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987002833A1 (en) * 1985-10-28 1987-05-07 American Telephone & Telegraph Company Multilayer ceramic laser package
JPH06151629A (ja) * 1992-11-12 1994-05-31 Shinko Electric Ind Co Ltd 光透過用ウィンドを備えたパッケージ
JPH08316503A (ja) * 1995-05-15 1996-11-29 Kyocera Corp 光素子収納用パッケージ
JPH10275873A (ja) * 1997-03-31 1998-10-13 Kyocera Corp 光半導体素子収納用パッケージ
JPH11176017A (ja) * 1997-12-12 1999-07-02 Sony Corp 光学ピックアップ及び光ディスク装置
JP2000223605A (ja) * 1999-01-28 2000-08-11 Ngk Spark Plug Co Ltd セラミックパッケージ

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 018, no. 461 (E - 1597) 26 August 1994 (1994-08-26) *
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 03 31 March 1997 (1997-03-31) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 01 29 January 1999 (1999-01-29) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 12 29 October 1999 (1999-10-29) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 11 3 January 2001 (2001-01-03) *

Also Published As

Publication number Publication date
DE10125374C1 (de) 2003-01-16
US20040178418A1 (en) 2004-09-16
WO2002095821A2 (de) 2002-11-28
JP2004527917A (ja) 2004-09-09
US7115962B2 (en) 2006-10-03

Similar Documents

Publication Publication Date Title
EP1255305A3 (de) Verfahren zur Herstellung eines Halbleiterfilms aus Cu (In, Ga) (Se,S)2
MY118657A (en) Windowed non-ceramic package having embedded frame
WO2003070624A3 (de) Verfahren zur erzeugung einer abdeckung, verfahren zum herstellen eines gehäusten bauelements
SG102638A1 (en) Lead frame, semiconductor package having the same, and semiconductor package manufacturing method
EP1489657A4 (de) Halbleiterchip-anbringplatte, verfahren zu ihrer herstellung und halbleitermodul
SG87194A1 (en) Lead frame and method of manufacturing the lead frame
EP1380368A4 (de) Metallplattenkipphebel und verfahren zur herstellung des metallplattenkipphebels
EP1544924A3 (de) Leuchtdioden-Verpackungsanordnung
AU2001248792A1 (en) Metal plate rocker arm and method of manufacturing the metal plate rocker arm
EP1469514A3 (de) Leitendes Substrat, Halbleiteranordnung und Herstellungsverfahren dafür
WO2002076880A3 (de) Verfahren zur herstellung von mikromechanischen sensoren und damit hergestellte sensoren
AU2001278736A1 (en) Method of producing semiconductor integrated circuit device and method of producing multi-chip module
AU2002361114A1 (en) Semiconductor photodetector and its production method
EP1372364A4 (de) Verfahren zur herstellung eines schaltungsausbildungssubstrats
WO2002095821A3 (de) Gehäuse für einen photoaktiven halbleiterchip und verfahren zu dessen herstellung
SG106590A1 (en) Semiconductor package leadframe assembly and method of manufacture
EP1341229A4 (de) Methode zur hermetischen versiegelung von elektronischen bauteilen
TW200623348A (en) Igniter, semiconductor device and manufacturing method thereof
WO2004073013A3 (de) Elektronisches bauteil mit halbleiterchip und verfahren zur herstellung desselben
AU2003292827A1 (en) Semiconductor device, dram integrated circuit device, and its manufacturing method
AU2002234063A1 (en) Method of mounting a semiconductor die on a substrate without using a solder mask
SG90216A1 (en) Lead frame and production method thereof, and semiconductor device and fabrication method thereof
AU2002366917A8 (en) Etalon based optical circuit and method for its production
EP1294023A3 (de) Halbleiter-IC-Module, Herstellungsmethode und Verwendung
AU2003259556A1 (en) Compound semiconductor particles and production process therefor

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2002592187

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 10479008

Country of ref document: US

122 Ep: pct application non-entry in european phase