WO2002066145A1 - Procede et dispositif de traitement de gaz - Google Patents

Procede et dispositif de traitement de gaz Download PDF

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Publication number
WO2002066145A1
WO2002066145A1 PCT/JP2002/001001 JP0201001W WO02066145A1 WO 2002066145 A1 WO2002066145 A1 WO 2002066145A1 JP 0201001 W JP0201001 W JP 0201001W WO 02066145 A1 WO02066145 A1 WO 02066145A1
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WIPO (PCT)
Prior art keywords
gas
inner electrode
pipe
electrode
disposed
Prior art date
Application number
PCT/JP2002/001001
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English (en)
Japanese (ja)
Inventor
Yuji Hayashi
Yuji Furumura
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Fujitsu Limited
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Publication date
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Publication of WO2002066145A1 publication Critical patent/WO2002066145A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/32—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by electrical effects other than those provided for in group B01D61/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34—Chemical or biological purification of waste gases
    • B01D53/46—Removing components of defined structure
    • B01D53/68—Halogens or halogen compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34—Chemical or biological purification of waste gases
    • B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
    • B01D53/86—Catalytic processes
    • B01D53/8659—Removing halogens or halogen compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J2219/0805—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • B01J2219/0807—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes
    • B01J2219/0809—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes employing two or more electrodes
    • B01J2219/0813—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes employing two or more electrodes employing four electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J2219/0805—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • B01J2219/0807—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes
    • B01J2219/0824—Details relating to the shape of the electrodes
    • B01J2219/0826—Details relating to the shape of the electrodes essentially linear
    • B01J2219/083—Details relating to the shape of the electrodes essentially linear cylindrical
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J2219/0805—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • B01J2219/0807—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes
    • B01J2219/0824—Details relating to the shape of the electrodes
    • B01J2219/0835—Details relating to the shape of the electrodes substantially flat
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J2219/0805—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • B01J2219/0807—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes
    • B01J2219/0837—Details relating to the material of the electrodes
    • B01J2219/0841—Metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0873—Materials to be treated
    • B01J2219/0875—Gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0873—Materials to be treated
    • B01J2219/0892—Materials to be treated involving catalytically active material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0894—Processes carried out in the presence of a plasma
    • B01J2219/0896—Cold plasma

Definitions

  • the present invention relates to a gas processing apparatus and a gas processing method, and more particularly to, but not limited to, a gas processing apparatus and a gas processing method suitable for processing waste gas containing harmful gas.
  • a gas processing apparatus and a gas processing method suitable for processing waste gas containing harmful gas.
  • the present inventors and co-researchers have developed a plasma-enhanced catalyst technology that generates plasma at room temperature, normal pressure, and atmospheric pressure and causes a chemical reaction of a gas to be treated under the action of a catalyst.
  • Fluorocarbon In the manufacture of semiconductor devices, fluorocarbon is used for etching. Fluorocarbons such as CF4, C2F6 and C3F8 are known to have high global warming potential. Even if the concentration does not directly harm the human body due to nitrogen dilution, etc., if it is accumulated in the atmosphere, it will have a significant impact on the environment on a global scale.
  • CF4 is treated with plasma under reduced pressure in the presence of O2 and H20 to convert it to CO2 and HF
  • CF4 is treated with plasma in the presence of Ca (OH) 2 under atmospheric pressure
  • C02, HF, Ca Techniques for converting to F2 have been proposed.
  • the former has problems with by-products and has the potential to disturb the etching process. Les ,.
  • the latter achieves high conversion efficiency, but has problems such as high power consumption.
  • DISCLOSURE OF THE INVENTION It is an object of the invention to provide a novel technique for gas treatment.
  • Another object of the present invention is to provide a novel gas processing technology that contributes to effective use of resources.
  • Yet another object of the present invention is to further improve the PACT according to the purpose.
  • a pipe formed of an electrical insulator and defining a gas flow path, a first inner electrode disposed upstream in the pipe, and a (1) a first outer electrode disposed so as to face the inner electrode, a second inner electrode disposed downstream of the first inner electrode in the pipe, and the second inner electrode disposed outside the pipe.
  • a gas treatment device having a second outer electrode disposed so as to face the gas treatment device.
  • a process target gas containing at least a first type gas and a second type gas is placed under atmospheric pressure in a pipe formed of an electrical insulator and defining a gas flow path.
  • a first inner electrode disposed upstream of the pipe and having a catalytic action on the gas to be treated, and facing the first inner electrode outside the pipe. Applying a first excitation voltage between the first outer electrode and the first outer electrode disposed in the pipe, generating a first atmospheric pressure plasma in the pipe, and decomposing at least a first type gas in the gas to be processed.
  • the second inner electrode is disposed between the second inner electrode and the second outer electrode.
  • the gas flow path is formed of an electrical insulator and defines a gas flow path.
  • a gas treatment device comprising: a pipe to be formed; an inner electrode formed in the pipe, formed of a foamed metal; and an outer conductor disposed outside the pipe so as to face the inner electrode.
  • a pipe formed of an electrical insulator and defining a gas flow path, an inner electrode disposed in the pipe, and facing the inner electrode outside the pipe And a first portion connected between the inner electrode and the outer electrode, the first portion having a pulse height for generating plasma, and maintaining the plasma following the first portion. And a pulse power supply for repeatedly generating a pulse signal having a second portion having a pulse height for the gas processing apparatus.
  • a pipe formed of an electrical insulator and defining a gas flow path; an inner electrode formed in the pipe and formed of a foamed metal; Introducing a gas to be treated into the pipe by using an outer conductor arranged so as to face the inner electrode, and applying an excitation voltage between the inner electrode and the outer electrode.
  • a pipe formed of an electrical insulator and defining a gas flow path, an inner electrode disposed in the pipe, and facing the inner electrode outside the pipe
  • An excitation voltage having a front portion having a first pulse height for generating a plasma, and a rear portion having a second pulse height lower than the first pulse height but lower than the first pulse height for maintaining generated plasma is applied after the front portion. Generating a pressure plasma to generate a reaction.
  • LD is a cross-sectional view schematically showing a gas processing apparatus according to an embodiment of the present invention.
  • 2A to 2C are a schematic cross-sectional view and a diagram for explaining a gas flow and an applied voltage in the gas processing apparatus shown in FIG.
  • 3A and 3B are cross-sectional views schematically showing a gas processing apparatus according to an embodiment of the present invention.
  • 4A and 4B are cross-sectional views schematically showing a gas processing apparatus according to an embodiment of the present invention.
  • 5A to 5C are cross-sectional views schematically showing a gas processing apparatus according to an embodiment of the present invention.
  • FIG. 6A and 6B are a block diagram schematically illustrating a gas processing apparatus according to an embodiment of the present invention and a perspective view schematically illustrating a gas decomposition and regeneration device.
  • FIG. 1A is a sectional view schematically showing a gas processing apparatus according to an embodiment of the present invention.
  • the quartz tube 11 is a reaction vessel that defines a gas flow path. The ability to use insulating materials other than quartz It is desirable to use quartz because of its chemical stability and ease of cleaning.
  • a gas inlet 12 is connected to one end of the reaction tube, and a gas outlet 13 is connected to the other end of the reaction tube. In the case of the illustrated configuration, the gas inlet 12 and the gas outlet 13 are both connected to the quartz tube 11. Both ends of the quartz tube 11 are hermetically sealed by sealing materials 14 and 15.
  • a first inner electrode 21 is arranged on the upstream side of the gas flow, and a second inner electrode 26 is arranged on the downstream side.
  • the inner electrodes 21 and 26 are made of a pipe or rod made of a metal having a catalytic action such as Cu, Au, Pt, Pd, Fe, Ni, or coated with these metals.
  • a predetermined gap is formed between the quartz tube 11 and the inner wall.
  • These inner electrodes 21 and 26 have lead portions 21 t and 26 t extending to the outside of the quartz tube 11. These lead portions 21 t and 26 t need not necessarily have the same shape and material as the inner electrodes 21 and 26.
  • the inner electrodes 21 and 26 face the inner wall of the quartz tube 11 via a gap of about 1 mm.
  • the outside of the quartz tube 11 should be opposed to the inner electrode 2Is26.
  • a first outer electrode 22 and a second outer electrode 27 of a conductive metal are arranged. These outer electrodes 22 and 27 are preferably wound in close contact with the quartz tube 11.
  • An adhesive tape such as Cu or A1 can be used.
  • An electrode may be formed on the outer peripheral surface of the quartz tube by plating / sputtering.
  • the open ends of the inner electrodes 21 and 26 arranged in the quartz tube 11 are hermetically sealed by a sealing material 24.
  • the sealing member 24 may be a sealing member 24c common to the inner electrodes 21 and 26, and the inner electrodes 21 and 26 may be mechanically held. By configuring the outer surface of the sealing material 24c so as to form the same plane as the outer surfaces of the inner electrodes 21 and 26, the gas flow can be stabilized.
  • a first high-frequency high-frequency power supply 23 is connected between the lead-out portion 21t of the inner electrode and the outer electrode 22.
  • a second high-frequency high-frequency power supply 28 is connected between the lead portion 26 t of the second inner electrode 26 and the second outer electrode 27.
  • the power supplies 23 and 28 By applying a high alternating voltage from these power sources 23 and 28 to the inner electrodes 21 and 26 and the outer electrodes 22 and 27, the space between the inner surface of the quartz tube 11 and the inner electrodes 21 and 26 is formed. Plasma is generated. The gas in the plasma is excited by the plasma and causes a chemical reaction to proceed under the catalytic action of the inner electrodes 21 and 26. As will be described later, the power supplies 23 and 28 generate a pulse train having a former part in which each pulse has a high pulse height and a latter part in which each pulse has a low pulse height. This pulse train alternates between positive and negative polarities, and forms a bipolar (alternating) pulse train.
  • FIG. 2A schematically shows the gas flow in the gas processing apparatus shown in FIG. 1A.
  • the gas introduced from the gas inlet 12 flows downstream through the gas flow path defined by the quartz tube 11 and the inner electrodes 21 and 26, and is led out from the gas outlet 13.
  • plasma Pl, P2 is formed in the space between the inner electrodes 21, 26 and the inner circumference of the quartz tube 11. Occurs.
  • the gas introduced from the gas inlet 12 is decomposed by the plasma P1, converted into another gas by the plasma P2, and led out from the gas outlet 13.
  • FIG. 2B schematically shows a waveform of a pulse voltage generated by the pulse power supplies 23 and 28.
  • the horizontal axis indicates time t
  • the vertical axis indicates voltage V.
  • the pulse train is a bipolar pulse train in which a positive pulse PS1 and a negative pulse PS2 are generated alternately.
  • Each pulse has a pulse height VI with sufficient voltage to generate the plasma, a front part with a duration t1, and a pulse height V2 sufficient to maintain the generated plasma, and a rear part with a duration t2.
  • the pulse height VI is, for example, a voltage of kV order and a pulse repetition frequency in units of positive and negative pulses is a high frequency of kHz or more.
  • V 1 for power supply 23 is about 3 kV
  • the frequency is 5 kHz or more.
  • the power consumption can be reduced by reducing the voltage from VI to V2.
  • independent electrode pairs are provided in the gas flow direction, upstream and downstream of the reaction tube, and connected to separate power sources 23 and 28 to separate the plasma P1 upstream from the reaction tube and the plasma P2 downstream. And both plasmas can be set to an optimal state.
  • the PACT gas treatment device is divided into a former stage and a latter stage, and the gas to be treated is decomposed in the former stage, and the synthesis reaction of the generated decomposed gas is performed in the latter stage, so that the desired recovered gas can be efficiently produced. It becomes possible to collect.
  • the first plasma P1 decomposes CF4 to generate C and F. .
  • the generated F radicals react with N2 in the plasma P2 to form NF3.
  • the second inner electrode 26 is formed of an alloy containing W as a main component.
  • CF4 is decomposed by the first plasma P1 to generate C and F radicals.
  • the F radical chemically reacts with W in the second inner electrode 26 to generate WF6.
  • the first plasma P1 is used to divide the gas to be processed as described above.
  • the material of the first inner electrode 21 and the parameters (pulse height, duration, frequency) of the voltage pulse generated by the power supply 23 are set to be optimal for this purpose.
  • the second plasma P2 is composed of at least one atom or group of atoms generated by decomposition. Used to react.
  • the material of the second inner electrode 26, the parameter of the voltage pulse generated by the power supply 28, and so on. (Loose height, duration, frequency) are set to be optimal for this purpose.
  • FIG. 1B is a sectional view showing a modification of the gas processing apparatus shown in FIG. 1A.
  • a getter material 16 for adsorbing C and the like generated in the plasma is disposed near the first inner electrode 21 and the second inner electrode 26 is formed by a foam metal pipe 26 X. It is configured.
  • the open end of the foam metal pipe 26X contains metal wool 24w formed of the same metal as the second inner electrode 26X.
  • the extension 26 y of the second inner electrode 26 constitutes a gas outlet.
  • a sealing material 24 or 24c as shown in FIG. 1A may be used.
  • an auxiliary additive 17 that supplies, for example, a reactive species for a synthesis reaction is arranged.
  • a member for adsorbing C is disposed as the getter agent 16 and W is the main component as the auxiliary additive 17 Place the metal to be used.
  • the extension 26y of the second inner electrode 26 is in the form of a pipe and constitutes a gas outlet 13 and provides a support for the second inner electrode 26X of foam metal.
  • FIG. 1C is a schematic plan view of the foam metal forming the second inner electrode 26X.
  • the foamed metal layer 29 has a large number of openings (through holes) so that gas can pass across the membrane. For example, the aperture ratio is 90% or more.
  • the material is, for example, Ni, Ni-Cu alloy, Cu, stainless steel (SUS316L) and the like.
  • precious metals such as Au, Pt, and Pd, which have high catalytic action, and Fe and the like can be used.
  • FIG. 1D shows a connection example between the second inner electrode 26X and the second inner electrode lead-out portion 26y.
  • a foamed metal layer 29 is wound around the outer periphery of the pipe-shaped second inner electrode lead-out portion 26 y to form the second inner electrode 26 X.
  • FIG. 2C schematically shows the gas flow in the gas treatment device of FIG. 1B.
  • the second inner electrode is formed of a 26 X metal foam pipe. Accordingly, the gas output from the first plasma P1 is affected by the second plasma P2, flows inward from the outside of the second inner electrode 26X, and flows out from the second inner electrode 26X to the lead portion 26y of the second inner electrode.
  • a C adsorbent is arranged as the getter agent 16 and a material mainly composed of W is arranged as the auxiliary additive 17.
  • the getter 16, the auxiliary additive 17, and the inner electrode made of foam metal are independent of each other, and can be arbitrarily used in combination with other components.
  • the first and second inner electrodes and the first and second outer electrodes are independent of each other.
  • forces that require mutually independent electrode pairs are required.
  • Each inner electrode 21, 26 and each outer electrode 22, 27 Need not all be independent.
  • 3A and 3B show a configuration in which one of the first and second inner electrodes 21 and 26 and one of the first and second outer electrodes 22 and 27 are shared.
  • the first and second inner electrodes are formed of a common electrode 21c.
  • the inner electrode 21c is formed of a continuous metal pipe, and is connected to the ground potential.
  • the first and second outer electrodes 22 and 27 are formed by a common outer electrode 22c and are connected to ground.
  • the power sources 23 and 28 are connected to the independently held electrodes. More specifically, in FIG. 3A, the power supplies 23, 28 are connected to the outer electrodes 22, 27, and in FIG. 3B, the power supplies 23, 28 are connected to the inner electrodes 21, 2, 2 Connected to 6. As shown in FIG. 3B, when both inner electrodes 21 and 26 are independent and a coupling member 25 is used therebetween, the coupling member 25 is formed of an electrically insulating material.
  • FIGS. 4A and 4B show a configuration example when both inner electrodes 21 and 26 are formed of a foamed metal layer. In FIG. 4A, the first inner electrode 21 is formed by winding a metal foam layer, and the second inner electrode 26 is similarly formed by winding a metal foam. The inner electrodes 21 and 26 are joined and supported by a joining member 25 of an electrically insulating material that also serves as a sealing material.
  • the gas inlet 12 is constituted by a pipe of a lead portion 21 t of the first inner electrode
  • the gas outlet 13 is constituted by a lead portion 26 t of the second inner electrode.
  • the gas to be treated is introduced from the extraction portion 21 t of the first inner electrode, passes through the inner electrode 21 of the foamed metal layer, and is led to the space between the inner electrode 21 and the inner surface of the quartz tube 11. After flowing downstream, from the space between the quartz tube 11 and the second inner electrode 26, it passes through the foamed metal layer of the second inner electrode 26, and enters the space inside the second inner electrode 26. Flows in and exits through gas outlet 13.
  • the first inner electrode 21 and the second inner electrode 26 are mechanically coupled by an insulating coupling member 25, but are electrically independent.
  • the first high-voltage, high-frequency power supply 23 is connected between the first inner electrode lead-out part 21 t and the first outer electrode 22, and the second high-voltage, high-frequency power supply 28 is connected to the second inner electrode lead-out part 26 t. Connected between the second outer electrodes 27.
  • FIG. 4B shows a case where the inner electrode coupling member 25 is formed of a conductor.
  • the first inner electrode 21 and the second inner electrode 26 are coupled by a conductive coupling member 25.
  • the gas flow path is separated by a solid connecting member 25.
  • the gas to be treated introduced from the gas inlet 12 is drawn out of the first inner electrode 21 into the space between the first inner electrode 21 and the inner surface of the quartz tube 11 and flows downstream, The gas is introduced into the second inner electrode 26 through the opening of the second inner electrode 26, and is led out of the gas outlet 13.
  • the first inner electrode 21 and the second inner electrode 26 are electrically connected in common, for example, to a common ground potential.
  • the first outer electrode 22 and the second outer electrode 27 are independently connected to a first power supply 23 and a second power supply 28, respectively.
  • the gas treatment device is divided into two stages, a front stage and a rear stage, (4)
  • parameters can be set according to the purpose.
  • the present invention is not limited to the above embodiment.
  • Decomposition of the gas to be treated is not always achieved by a single-stage chemical reaction, and the composition of the gas to be regenerated is not necessarily achieved by a single-stage reaction. It may be desirable to perform the decomposition in a multi-stage chemical reaction. It may be desirable to carry out the synthesis reaction in multiple stages of chemical reactions.
  • FIG. 5A shows an embodiment in which a gas to be treated is subjected to three or more stages of treatment.
  • inner electrodes including a first inner electrode 21-1, a second inner electrode 21-2, a third inner electrode 21-3, a fourth inner electrode 21-4, ... are arranged.
  • ⁇ are connected by conductive connecting members 25-1, 25-2, 25-3, respectively.
  • odd-numbered connecting members 25-1, 25-3,... are solid connecting members, and are arranged so as to block a gas flow path in the inner electrode 21.
  • the even-numbered coupling members 25-2, 25-4,... are arranged between the inner electrode 21 and the quartz tube 11 to block a flow path between the inner electrode 21 and the inner surface of the quartz tube 11. You. .
  • the inner electrodes 21-1, 21-2, 21-3,... are electrically coupled by conductive coupling members 25-1, 25_2, 25-3,... And are commonly connected to the ground potential.
  • the outer electrodes 22-1, 22-2, 22-3, ... are connected to independent high-voltage, high-frequency power supplies 23-1, 23-2, 23-3, ..., respectively, and are applied with a predetermined drive voltage. .
  • reaction tube by dividing the reaction tube into three or more reaction stages in the gas flow direction, decomposition, synthesis, or the reaction of both can be decomposed into multiple stages, and the applied voltage required for each reaction stage can be selected independently. Thus, a desired reaction can be performed.
  • FIG. 5B shows still another modification.
  • a gas inlet 12 is connected to the upstream end of the reaction tube 11, a gas outlet 13 is connected to the downstream end, and a common inner electrode 12 is set inside the reaction tube 11.
  • the first outer electrode 22-1, outside the reaction tube 1 1 The second outer electrode 22-2, the third outer electrode 22-3, the fourth outer electrode 22-4, ... are arranged.
  • a power source 23-1, 23-2, 23-3, 23-4, ... is connected to each outer electrode.
  • an additive gas inlet 17-1 is formed in an intermediate region between the first outer electrode 23-1 and the second outer electrode 23-2, and the second outer electrode 23-2 and the third outer electrode 23 are formed.
  • the product gas outlet 18 is connected to the middle of 23-3.
  • an additional gas injection port 17-2 is connected between the third outer electrode 22-3 and the fourth outer electrode 22-4.
  • Embodiments have been described in which electrodes are provided inside and outside the reaction tube to generate plasma in the reaction tube, but the present invention is not limited to these embodiments.
  • FIG. 5C is a cross-sectional view schematically showing another mechanism of plasma generation.
  • the quartz reaction tube 31 has a portion whose diameter is enlarged in the middle, and a rotating shaft portion 32 magnetized at that portion and a rotating blade 33 serving also as an inner electrode set around the rotating shaft portion 32.
  • a rotating magnetic field generating member 34 is set outside the quartz member 31.
  • the rotating wings 33 are rotated by generating a rotating magnetic field.
  • an outer electrode 35 is set outside the quartz member 31, and a high-voltage power supply is connected between the outer electrode 35 and the rotor 33.
  • a high voltage plasma is generated between the reaction tube 31 and the rotor member 33.
  • the plasma spreads circumferentially in the reaction tube.
  • FIG. 6A is a schematic diagram showing a system in which the gas processing apparatus according to the embodiment is connected to a semiconductor etching apparatus.
  • a turbo pump 32 is connected to the downstream side of the semiconductor etching apparatus 31, and a dry pump 33 is connected to the downstream side of the turbo pump 32. Dry pump 3 N3 is introduced into 3, and the exhaust gas is the exhaust gas of the etching apparatus 31 and a gas containing N2.
  • a gas decomposition regeneration device 35 is connected to the exhaust gas. The gas decomposition regeneration device 35 is further connected to a gas container 37 via a valve V via a specific element recovery means 36.
  • CF 4 gas is used for etching in the etching apparatus 31.
  • the gas used for etching is exhausted and introduced into a gas decomposition regeneration unit 35 via a turbo pump 32 and a dry pump 33.
  • the gas containing CF 4 gas and N 2 is converted into NF 3 gas or WF 6 gas.
  • the specific element recovery means 36 is an optional constituent means, for example, recovers a gas type (C, Si,%) That can be precipitated, and provides the same for reuse.
  • the gas that has passed through the specific element recovery means 36 is selectively recovered to the gas container 37 by the valve V.
  • FIG. 6B is a perspective view schematically showing a configuration example of the gas decomposition regeneration device 35 in FIG. 6A.
  • the gas introduced from the gas inlet 12 is branched into a plurality of parallel reaction systems, subjected to the above-described reaction treatments by the respective reaction stages 35 i, and extracted from the gas outlet 13.
  • the respective reaction stages 35 i are connected to the respective reaction stages 35 i, and extracted from the gas outlet 13.
  • the desired treatment can be performed more reliably and more efficiently, and the desired regenerated gas can be recovered. Can be.

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Abstract

Cette invention concerne un procédé et un dispositif de traitement de gaz, ainsi qu'une nouvelle technique de traitement de gaz. Ledit dispositif de traitement de gaz composé d'un isolant thermique, comprend un tuyau servant de canal d'écoulement du gaz, une première électrode interne placée dans la zone en amont du tuyau, une première électrode externe placée hors dudit tuyau face à la première électrode interne, une seconde électrode interne située dans le tuyau et placée en aval de la première électrode interne, et une seconde électrode externe placée hors dudit tuyau face à la seconde électrode interne. La réalisation du traitement au charbon actif en poudre (CAP) au niveau de la seconde étape permet de décomposer efficacement un gaz objet du processus et de synthétiser un gaz qu'on peut utiliser ultérieurement de manière efficace.
PCT/JP2002/001001 2001-02-19 2002-02-06 Procede et dispositif de traitement de gaz WO2002066145A1 (fr)

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JP2001-041487 2001-02-19

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EP2903721A4 (fr) * 2012-10-04 2016-09-07 Fipak Res And Dev Company Procédé et appareil pour purger l'air de substances non souhaitées
CN109351300A (zh) * 2018-11-14 2019-02-19 中国人民解放军空军工程大学 一种串联式等离子体裂解流动反应器及其操作方法
US10478517B2 (en) 2008-09-19 2019-11-19 Fipak Research And Development Company Method and apparatus for purging unwanted substances from air

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WO2015160057A1 (fr) * 2014-04-16 2015-10-22 주식회사 클린팩터스 Réacteur à plasma permettant de traiter un gaz d'échappement produit à partir d'une installation de traitement
KR101541817B1 (ko) * 2014-06-11 2015-08-04 (주)클린팩터스 공정설비에서 발생되는 배기가스 처리 플라즈마 반응기
KR101732048B1 (ko) * 2015-07-07 2017-05-02 (주)클린팩터스 공정설비에서 발생되는 배기가스 처리 플라즈마 반응기
KR102209094B1 (ko) * 2019-03-26 2021-01-28 한국기계연구원 공정 부산물 제거를 위한 플라즈마 반응장치 및 이를 구비한 반도체 공정 설비
KR102177242B1 (ko) * 2019-04-30 2020-11-10 한국기계연구원 공정 부산물 제거를 위한 플라즈마 반응장치 및 이를 구비한 반도체 공정 설비
KR102177241B1 (ko) * 2019-08-16 2020-11-10 한국기계연구원 공정 부산물 제거를 위한 플라즈마 반응장치 및 이를 구비한 반도체 공정 설비

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JPS6048339A (ja) * 1983-08-26 1985-03-16 Unitika Ltd シ−ト状物の低温プラズマ処理方法及び装置
JPH06178914A (ja) * 1992-12-14 1994-06-28 Mitsubishi Heavy Ind Ltd 排ガス処理装置
DE4317964A1 (de) * 1993-05-28 1994-12-01 Siemens Ag Verfahren und Vorrichtung zur plasmachemischen Bearbeitung von Schadstoffen und Materialien
DE19605547A1 (de) * 1996-02-15 1997-08-21 Abb Research Ltd Verfahren zur Erzeugung von Methanol
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JPH10235138A (ja) * 1997-02-27 1998-09-08 Ebara Corp 排ガス処理方法
WO1999020373A1 (fr) * 1997-10-22 1999-04-29 Aea Technology Plc Dispositif de traitement de gaz au plasma
WO1999026726A1 (fr) * 1997-11-25 1999-06-03 State Of Israel - Ministry Of Defense Rafael - Armament Development Authority Barriere dielectrique modulaire a decharges reduisant la pollution
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10478517B2 (en) 2008-09-19 2019-11-19 Fipak Research And Development Company Method and apparatus for purging unwanted substances from air
EP2903721A4 (fr) * 2012-10-04 2016-09-07 Fipak Res And Dev Company Procédé et appareil pour purger l'air de substances non souhaitées
CN109351300A (zh) * 2018-11-14 2019-02-19 中国人民解放军空军工程大学 一种串联式等离子体裂解流动反应器及其操作方法

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