WO2002061808A2 - Appareil de traitement thermique et anneau de support de plaquettes - Google Patents

Appareil de traitement thermique et anneau de support de plaquettes Download PDF

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Publication number
WO2002061808A2
WO2002061808A2 PCT/JP2002/000657 JP0200657W WO02061808A2 WO 2002061808 A2 WO2002061808 A2 WO 2002061808A2 JP 0200657 W JP0200657 W JP 0200657W WO 02061808 A2 WO02061808 A2 WO 02061808A2
Authority
WO
WIPO (PCT)
Prior art keywords
heat treatment
sic
silicon wafer
wafer
silicon
Prior art date
Application number
PCT/JP2002/000657
Other languages
English (en)
Other versions
WO2002061808A3 (fr
Inventor
Masahiro Shimizu
Takeshi Sakuma
Takashi Shigeoka
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2002061808A2 publication Critical patent/WO2002061808A2/fr
Publication of WO2002061808A3 publication Critical patent/WO2002061808A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Definitions

  • the present invention generally relates to heat treatment apparatuses and, more particularly, to a heat treatment apparatus for applying a heat treatment to a silicon wafer and a wafer support ring used on the heat treatment apparatus.
  • Various heat treatment apparatuses which apply heat treatment by heating a silicon wafer, have been developed.
  • RTP rapid thermal processing apparatus
  • a periphery of a silicon wafer is supported by a guard ring while the silicon wafer is subjected to the rapid heating process.
  • a temperature difference occurs between a periphery of the silicon wafer and a part of the guard ring contacting the silicon wafer. That is, if a temperature difference occurs between a circumference part of the silicon wafer and the part of the guard ring supporting the periphery of the silicon wafer, the entire surface of the silicon wafer cannot be heat-treated uniformly.
  • a major cause of such a temperature difference is that the conventional guard ring is formed of silicon carbide which has twice the thermometric conductivity of silicon.
  • Another major cause of such a temperature difference is that a radiation energy distribution corresponding to a ratio of thermometric conductivities of the silicon wafer and the guard ring cannot be achieved on the surface of the silicon wafer.
  • a more specific object of the present invention is to provide a heat treatment apparatus which can rapidly and uniformly heat an entire surface of a silicon wafer and a wafer support ring used in such a heat treatment apparatus .
  • a heat treatment apparatus for applying a heat treatment by heating a silicon wafer, comprising a wafer support member supporting the silicon wafer during the heat treatment, the wafer support member formed of silicon carbide having a vacancy rate of 5% to 20% on a density basis.
  • the wafer support member may be formed of a ceramics matrix composite material, or may be formed of silicon carbide containing an impurity added by a concentration ratio of 10 ⁇ 7 to 10 "4 .
  • a wafer support ring configured and arranged to support a periphery of a silicon wafer when a heat treatment is applied to the silicon wafer by heating, the wafer support ring being formed of silicon carbide having a vacancy rate of 5% to 20% on a density basis.
  • the wafer support ring may be formed of a ceramics matrix composite material, or may be formed of silicon carbide containing an impurity added by a concentration ratio of 10 ⁇ 7 to 10 ⁇ 4 .
  • the silicon wafer is supported by a material having thermophysical properties close to that of the silicon wafer.
  • a temperature difference between the silicon wafer and the wafer support member can be reduced, which results in a uniform temperature over the entire silicon wafer.
  • FIG. 1 is an illustration of a heat treatment apparatus according to an embodiment of the present invention.
  • FIG. 2 is an illustration showing a tetrahedron crystal structure of silicon carbide.
  • FIG. 1 is an illustration of a heat treatment apparatus according to the present invention
  • the heat treatment apparatus comprises : a lamp house 1 including a plurality of halogen lamps 3; a quarts plate 5; a heat-equalizing ring 9 on which a silicon wafer 7 to be heated is placed; and a wafer support pin 10.
  • the heat-equalizing ring 9 correspond to a wafer support member or wafer support ring.
  • the halogen lamps 3 irradiate a light onto the silicon wafer 7 so as to heat the silicon wafer 7 supported by the heat equalization ring 9.
  • the light emitted from the halogen lamps 3 transmits through the quartz late 5 toward the silicon wafer 7.
  • the quartz plate 5 separate a process space, in which a heat treatment is applied to the silicon wafer 7 while being supplied with various gasses, and the lamp house 1, in which the halogen lamps 3 are accommodated.
  • the heat-equalizing ring 9 supports an outer periphery of the silicon wafer 7, and the wafer support pin 10 supports the heat-equalizing ring 9.
  • the above-mentioned heat-equalizing ring 9 is formed 'of silicon carbide (SiC) having thermophysical ' properties, such as thermometric conductivity, which is approximate to that of the silicon wafer 7.
  • thermometric conductivity ⁇ is a value obtained by dividing a thermal conductivity K by a heat capacity pc (p is a density and c is a specific heat) .
  • thermometric conductivity of the heat-equalizing ring 9 in order to bring the thermometric conductivity of the heat-equalizing ring 9 close to the thermometric conductivity of the silicon wafer 7, there is means to vary the thermal conductivity K, the density p or the specific heat c.
  • the thermal conductivity is determined by a sum total of contributions of carriers which serve to achieve thermal conduction within a solid, i.e., electrons, lattice vibration (phonon) or radiation (photon) .
  • thermometric conductivity alpha a propagation rate of heat into inside a matter is higher as a value of thermometric conductivity alpha is larger. That is, if the thermometric conductivity is large, this means that either the thermal conductivity K of the matter is large and an energy transportation rate is high or the heat capacity pc of the matter is small. When the heat capacity is small, a small part of heat transferring in the matter is absorbed by the matter and used for raising the temperature, and, thereby, the remaining large part of heat is transferred to a remote position.
  • the heat-equalizing ring 9 is formed of silicon carbide having a thermometric conductivity close to the thermometric conductivity of the silicon wafer 7.
  • silicon carbide SiC
  • SiC silicon carbide
  • a crystal system there are a cubic system, a hexagonal system and a rhombohedral system.
  • the polytypes which are generally used as a raw-material powder for sintering or a sintered material, have a cubic system or a hexagonal system.
  • the thermophysical properties also change according to the polytypes produced in response to a manufacturing method.
  • the heat-equalizing ring 9 formed of cubic system SiC having a density lower than conventional SiC due to a vacancy rate of 5 - 20% is explained.
  • the cubic system SiC can be produced by the following manufacturing method. First, SiC is prepared in the form of ultra fine powder, which can be produced by a plasma CVD method with SiH 4 and C 2 H 6 gas. Then, the powder is sintered (hot pressed) under the condition of a pressure of 40 MPa at a temperature of 2000°C, and the sintered SiC is cleaned.
  • SiC having a vacancy rate of about 5 - 20% according to a density conversion value can be formed.
  • a mechanical strength of such SiC may be insufficient and cannot withstand machining.
  • Table 1 shows thermophysical- properties of the SiC produced by the above-mentioned method in comparison with the thermophysical properties of conventional SiC.
  • the conventional SiC indicated in the above- mentioned Table 1 is amorphous silicon SiC.
  • the amorphous silicon SiC can be prepared by fully mixing the commercially available SiC powder and the above-mentioned ultra fine powder of SiC and sintering the mixture under a pressure of 40 MPa at a temperature of 2000°C, and cleaning the sintered material.
  • the vacancy rate of Si, which constitutes the silicon (Si) wafer 7 is 0%, and the vacancy rate of the above-mentioned amorphous silicon SiC is 0.3%.
  • the density of SiC (porous) according to the first embodiment is 3.0 [g/cm 3 ], which is lower than the density 3.2 [g/cm 3 ] of the conventional SiC. Consequently, the heat capacity per unit volume of SiC (porous) is 0.48 [cal/cm 3 -°C ], which is a value closer to the heat capacity 0.389
  • thermometric conductivity of SiC (porous) which has a reduced density by increasing the vacancy rate to 5 - 20% as mentioned above, is a value closer to the thermometric conductivity of Si than the conventional SiC.
  • the heat-equalizing ring 9 is formed of an SiC/SiC composite material having a matrix (substrate) formed of Si-C-O/SiC or SiC/Si.
  • the SiC/SiC composite material is a ceramic matrix composite material (CMC) , which is lightweight and has high strength, high rigidity, heat resistance and environment resistance.
  • the manufacturing process of such an SiC/SiC composite material includes a fiber process for preparing fibers in advance and a formation process for forming a matrix.
  • a precursor impregnate and baking method PIP
  • HP hot press method
  • RS reaction sintering method
  • a matrix is formed in a fiber preform by repeating impregnate and baking of an inorganic polymer (precursor) .
  • a matrix is formed in a short time by filling carbon powder in a fiber preform beforehand and thereafter impregnating Si into the fiber preform so as to form a matrix in a short time according to a reaction of C+Si ⁇ SiC.
  • the matrix composition and crystallinity give more influence to the heat conductivity than the vacancy rate.
  • thermophysical properties close to the silicon wafer 7 it is also useful to form the heat-equalizing ring 9 by the SiC/SiC composite material, which' uses a matrix formed of Si-C-O/SiC or SiC/Si.
  • the heat-equalizing ring 9 according to the third embodiment of the present invention is formed of SiC having a concentration of doped impurities close to an amount of doping of the silicon wafer 7.
  • the impurities doped into SiC produce heat carrier electrons in SiC, and play a role to increase the thermal conductivity.
  • thermophysical properties shown in the following Table 2.
  • the conventional SiC contains boron (B) as an impurity.
  • the impurities (dopants) doped into the silicon wafer 7 are also doped into SiC, which constitutes the heat- equalizing ring 9 according to the present embodiment.
  • the impurities to be doped may include phosphorous (P) , arsenic (As) , antimony (Sb) , boron (B) , indium (In) , aluminium (Al) and gallium (Ga) .
  • the impurities are doped by a concentration ratio of 10-7 to 10-4.
  • the thermal conductivity and thermometric conductivity of the impurity-doped SiC according to the present embodiment are lower than that of the conventional SiC.
  • SiC having thermophysical properties close to the thermal conductivity and thermometric conductivity of the doped silicon wafer 7 can be obtained.
  • the main purpose of adding an impurity to SiC is not developing a new material, but rather developing a radio frequency power device using a large band gap, saturation electron speed, dielectric withstand or thermal conductivity, which cannot be achieved by a silicon device.
  • the ultra fine powder of SiC produced by a thermal plasma CVD method using SiH 4 and C 2 H 6 gas is prepared first. Then, the ultara fine powder is sintered (hot-pressed) under the condition of a pressure of 40 MPa at a temperature of 2000°C.
  • trivalent ions for example, B+, A1+, Ga+, In+
  • pentavalent ions for example, N+, P+, As+, Sb+
  • the ions are accelerated in a vacuum and are implanted into the single crystal SiC as impurities. Since the single crystal SiC into which the impurities are introduced is changed to amorphous, the amorphous SiC is crystallized by heat treatment. Then, finally the recrystallized. SiC is subjected to a cleaning process.
  • the SiC ultra fine powder produced by a thermal plasma CVD method using SiH4 and C2H6 gas and a slight amount of powder of impurities (for example, trivalent B, Al, Ga, In or pentavalent N, P, As, Sb and a compound of Si or C) are fully mixed.
  • the powder mixture is sintered (hot-pressed) under the condition of a pressure of 40 MPa at 2000°C, and the sintered SiC is cleaned.
  • the ultra fine powder of SiC is produced by a thermal plasma CVD method using SiH 4 and C 2 H 6 gas.
  • the ultra fine powder is sintered
  • the SiC is annealed and cleaned.
  • the heat conductivity of SiC into which the impurities are added by the above-mentioned methods increases according to the following formulas, where K is a thermal conductivity per unit volume, Ce is a specific heat of electron carriers per unit volume, ve is a speed of the electron carrier, and le is a mean free path of an electron carrier.
  • K (l/3) Ce -ve- le
  • the heat-equalizing ring 9 according to the third embodiment of the present invention can is also be constituted by SiC having thermophysical properties close to that of the silicon wafer 7 which is an object to be heat-treated. Accordingly, the temperature difference generated between the central part and the periphery of the silicon wafer 7 during the heat treatment process can be reduced. Thus, an entire surface of the silicon wafer is uniformly heated, which results in a uniform heat treatment being applied to the silicon wafer 7.

Abstract

L'invention concerne un appareil de traitement thermique chauffant rapidement et uniformément la totalité de la surface d'une plaquette de silicium de manière à appliquer un traitement thermique à la plaquette de silicium. Un anneau de support de plaquette porte la plaquette de silicium pendant le traitement thermique. L'anneau de support de plaquette est constitué de carbure de silicium ayant un taux d'inoccupation de 5 % à 20 % sur une base de densité. Dans un autre mode de réalisation, l'anneau de support de la plaquette peut être composé d'un matériau composite à matrice céramique ou il peut être composé de carbure de silicium contenant une impureté ajoutée selon un rapport de concentration de 10-7 à 10-4.
PCT/JP2002/000657 2001-01-30 2002-01-29 Appareil de traitement thermique et anneau de support de plaquettes WO2002061808A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-022454 2001-01-30
JP2001022454A JP2002231649A (ja) 2001-01-30 2001-01-30 加熱処理装置とウェーハ支持リング

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WO2002061808A2 true WO2002061808A2 (fr) 2002-08-08
WO2002061808A3 WO2002061808A3 (fr) 2003-09-04

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TW (1) TW559910B (fr)
WO (1) WO2002061808A2 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005045905A1 (fr) * 2003-10-27 2005-05-19 Applied Materials, Inc. Procede pour obtenir une uniformite selective de temperature
EP2058841A2 (fr) 2007-11-07 2009-05-13 Deutsches Zentrum für Luft- und Raumfahrt e.V. Elément de transfert de chaleur et dispositif pour le traitement thermique de substrats
DE102007054527A1 (de) * 2007-11-07 2009-05-14 Deutsches Zentrum für Luft- und Raumfahrt e.V. Neue Aufheizblöcke
US8536492B2 (en) 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources

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JP4908765B2 (ja) * 2005-03-22 2012-04-04 光洋サーモシステム株式会社 均熱部材及び熱処理装置

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005045905A1 (fr) * 2003-10-27 2005-05-19 Applied Materials, Inc. Procede pour obtenir une uniformite selective de temperature
US7127367B2 (en) 2003-10-27 2006-10-24 Applied Materials, Inc. Tailored temperature uniformity
US8536492B2 (en) 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
EP2058841A2 (fr) 2007-11-07 2009-05-13 Deutsches Zentrum für Luft- und Raumfahrt e.V. Elément de transfert de chaleur et dispositif pour le traitement thermique de substrats
DE102007054527A1 (de) * 2007-11-07 2009-05-14 Deutsches Zentrum für Luft- und Raumfahrt e.V. Neue Aufheizblöcke
EP2058841A3 (fr) * 2007-11-07 2012-05-02 Deutsches Zentrum für Luft- und Raumfahrt e.V. Elément de transfert de chaleur et dispositif pour le traitement thermique de substrats

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TW559910B (en) 2003-11-01
WO2002061808A3 (fr) 2003-09-04
JP2002231649A (ja) 2002-08-16

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