WO2002061808A3 - Appareil de traitement thermique et anneau de support de plaquettes - Google Patents

Appareil de traitement thermique et anneau de support de plaquettes Download PDF

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Publication number
WO2002061808A3
WO2002061808A3 PCT/JP2002/000657 JP0200657W WO02061808A3 WO 2002061808 A3 WO2002061808 A3 WO 2002061808A3 JP 0200657 W JP0200657 W JP 0200657W WO 02061808 A3 WO02061808 A3 WO 02061808A3
Authority
WO
WIPO (PCT)
Prior art keywords
heat treatment
support ring
wafer support
treatment apparatus
wafer
Prior art date
Application number
PCT/JP2002/000657
Other languages
English (en)
Other versions
WO2002061808A2 (fr
Inventor
Masahiro Shimizu
Takeshi Sakuma
Takashi Shigeoka
Original Assignee
Tokyo Electron Ltd
Masahiro Shimizu
Takeshi Sakuma
Takashi Shigeoka
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Masahiro Shimizu, Takeshi Sakuma, Takashi Shigeoka filed Critical Tokyo Electron Ltd
Publication of WO2002061808A2 publication Critical patent/WO2002061808A2/fr
Publication of WO2002061808A3 publication Critical patent/WO2002061808A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Abstract

L'invention concerne un appareil de traitement thermique chauffant rapidement et uniformément la totalité de la surface d'une plaquette de silicium de manière à appliquer un traitement thermique à la plaquette de silicium. Un anneau de support de plaquette porte la plaquette de silicium pendant le traitement thermique. L'anneau de support de plaquette est constitué de carbure de silicium ayant un taux d'inoccupation de 5 % à 20 % sur une base de densité. Dans un autre mode de réalisation, l'anneau de support de la plaquette peut être composé d'un matériau composite à matrice céramique ou il peut être composé de carbure de silicium contenant une impureté ajoutée selon un rapport de concentration de 10-7 à 10-4.
PCT/JP2002/000657 2001-01-30 2002-01-29 Appareil de traitement thermique et anneau de support de plaquettes WO2002061808A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-022454 2001-01-30
JP2001022454A JP2002231649A (ja) 2001-01-30 2001-01-30 加熱処理装置とウェーハ支持リング

Publications (2)

Publication Number Publication Date
WO2002061808A2 WO2002061808A2 (fr) 2002-08-08
WO2002061808A3 true WO2002061808A3 (fr) 2003-09-04

Family

ID=18887868

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/000657 WO2002061808A2 (fr) 2001-01-30 2002-01-29 Appareil de traitement thermique et anneau de support de plaquettes

Country Status (3)

Country Link
JP (1) JP2002231649A (fr)
TW (1) TW559910B (fr)
WO (1) WO2002061808A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7127367B2 (en) * 2003-10-27 2006-10-24 Applied Materials, Inc. Tailored temperature uniformity
US8536492B2 (en) 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
JP4908765B2 (ja) * 2005-03-22 2012-04-04 光洋サーモシステム株式会社 均熱部材及び熱処理装置
DE102007054527A1 (de) * 2007-11-07 2009-05-14 Deutsches Zentrum für Luft- und Raumfahrt e.V. Neue Aufheizblöcke
DE102007054526A1 (de) 2007-11-07 2009-05-14 Deutsches Zentrum für Luft- und Raumfahrt e.V. Wärmetransferelement und Anlage zur thermischen Behandlung von Substraten

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5292399A (en) * 1990-04-19 1994-03-08 Applied Materials, Inc. Plasma etching apparatus with conductive means for inhibiting arcing
JPH08181150A (ja) * 1994-12-26 1996-07-12 Touyoko Kagaku Kk 基板加熱処理方法
EP0781739A1 (fr) * 1995-12-26 1997-07-02 Asahi Glass Company Ltd. Gabarit destiné au traitement thermique et procédé de production de celui-ci
EP0821403A2 (fr) * 1996-07-24 1998-01-28 Applied Materials, Inc. Support d'une plaquette semi-conductrice à masse thermique en gradient
JPH1171181A (ja) * 1997-06-20 1999-03-16 Bridgestone Corp 半導体製造装置用部材
JPH11130540A (ja) * 1997-10-31 1999-05-18 Hitachi Chem Co Ltd ＳｉＣ焼結体及びその製造法
JPH11200030A (ja) * 1998-01-20 1999-07-27 Sumitomo Chem Co Ltd スパッタリングターゲット用バッキングプレート
JPH11343168A (ja) * 1998-05-29 1999-12-14 Kyocera Corp 低熱膨張黒色セラミックス及びその製造方法、並びに半導体製造装置用部材
US6074488A (en) * 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring
WO2000036635A1 (fr) * 1998-12-11 2000-06-22 Steag Rtp Systems Gmbh Suscepteur rotatif entraine par un gaz et destine a un systeme de traitement thermique rapide
US6086680A (en) * 1995-08-22 2000-07-11 Asm America, Inc. Low-mass susceptor
US6120661A (en) * 1998-06-08 2000-09-19 Sony Corporation Apparatus for processing glass substrate
US20020000547A1 (en) * 2000-05-26 2002-01-03 Nisshinbo Industries, Inc., Silicon/graphite composite ring for supporting silicon wafer, and dry etching apparatus equipped with the same
JP2002164421A (ja) * 2000-11-28 2002-06-07 Taiheiyo Cement Corp 基板保持部材

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5292399A (en) * 1990-04-19 1994-03-08 Applied Materials, Inc. Plasma etching apparatus with conductive means for inhibiting arcing
JPH08181150A (ja) * 1994-12-26 1996-07-12 Touyoko Kagaku Kk 基板加熱処理方法
US6086680A (en) * 1995-08-22 2000-07-11 Asm America, Inc. Low-mass susceptor
EP0781739A1 (fr) * 1995-12-26 1997-07-02 Asahi Glass Company Ltd. Gabarit destiné au traitement thermique et procédé de production de celui-ci
EP0821403A2 (fr) * 1996-07-24 1998-01-28 Applied Materials, Inc. Support d'une plaquette semi-conductrice à masse thermique en gradient
JPH1171181A (ja) * 1997-06-20 1999-03-16 Bridgestone Corp 半導体製造装置用部材
US6074488A (en) * 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring
JPH11130540A (ja) * 1997-10-31 1999-05-18 Hitachi Chem Co Ltd ＳｉＣ焼結体及びその製造法
JPH11200030A (ja) * 1998-01-20 1999-07-27 Sumitomo Chem Co Ltd スパッタリングターゲット用バッキングプレート
JPH11343168A (ja) * 1998-05-29 1999-12-14 Kyocera Corp 低熱膨張黒色セラミックス及びその製造方法、並びに半導体製造装置用部材
US6120661A (en) * 1998-06-08 2000-09-19 Sony Corporation Apparatus for processing glass substrate
WO2000036635A1 (fr) * 1998-12-11 2000-06-22 Steag Rtp Systems Gmbh Suscepteur rotatif entraine par un gaz et destine a un systeme de traitement thermique rapide
US20020000547A1 (en) * 2000-05-26 2002-01-03 Nisshinbo Industries, Inc., Silicon/graphite composite ring for supporting silicon wafer, and dry etching apparatus equipped with the same
JP2002164421A (ja) * 2000-11-28 2002-06-07 Taiheiyo Cement Corp 基板保持部材

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 11 29 November 1996 (1996-11-29) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 08 30 June 1999 (1999-06-30) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 10 31 August 1999 (1999-08-31) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 12 29 October 1999 (1999-10-29) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 03 30 March 2000 (2000-03-30) *
PATENT ABSTRACTS OF JAPAN vol. 2002, no. 10 10 October 2002 (2002-10-10) *

Also Published As

Publication number Publication date
TW559910B (en) 2003-11-01
WO2002061808A2 (fr) 2002-08-08
JP2002231649A (ja) 2002-08-16

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