WO2002053795A1 - Procede et dispositif d'application, dispositif d'exposition a un faisceau electronique, dispositif deflecteur et procede de production du dispositif deflecteur - Google Patents

Procede et dispositif d'application, dispositif d'exposition a un faisceau electronique, dispositif deflecteur et procede de production du dispositif deflecteur Download PDF

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Publication number
WO2002053795A1
WO2002053795A1 PCT/JP2001/010364 JP0110364W WO02053795A1 WO 2002053795 A1 WO2002053795 A1 WO 2002053795A1 JP 0110364 W JP0110364 W JP 0110364W WO 02053795 A1 WO02053795 A1 WO 02053795A1
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WO
WIPO (PCT)
Prior art keywords
vapor deposition
unit
base material
electron beam
boat
Prior art date
Application number
PCT/JP2001/010364
Other languages
English (en)
Japanese (ja)
Inventor
Kazuto Ashihara
Original Assignee
Advantest Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corporation filed Critical Advantest Corporation
Publication of WO2002053795A1 publication Critical patent/WO2002053795A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H01J37/1477—Scanning means electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe

Definitions

  • the present invention relates to a vapor deposition device, a vapor deposition method, an electron beam exposure device, a deflecting device, and a method for manufacturing a deflecting device.
  • the present invention relates to a vapor deposition apparatus and a vapor deposition method for vapor-depositing a conductive material on an inner surface of a cylindrical base material, and an electron beam exposure apparatus, a deflection apparatus, and a method of manufacturing a deflection apparatus for accurately deflecting an electron beam.
  • An electron beam exposure apparatus that exposes a pattern on a wafer with an electron beam has a deflecting unit that deflects the electron beam so that a predetermined region on the wafer is irradiated with the electron beam.
  • the deflecting unit has a cylindrical base material and an electrode provided on an inner surface of the base material for deflecting the electron beam.
  • the electrodes of the deflection section are formed by plating, and therefore contain a large amount of impurities. Therefore, when deflecting the electron beam by the deflecting unit, it was difficult to accurately deflect the electron beam due to the influence of impurities contained in the electrodes. Disclosure of the invention
  • a first aspect of the present invention is directed to a vapor deposition apparatus for vapor-depositing a conductive material on an inner surface of a cylindrical base material, the port having a groove for accommodating the conductive material.
  • a substrate support that supports the substrate, and a port into the substrate
  • the present invention provides a vapor deposition apparatus comprising: a driving unit that moves at least one of a vapor deposition unit and a substrate support unit so as to perform heating; and a heating unit that heats a boat unit.
  • the boat preferably has a plurality of grooves formed along the direction of insertion of the boat.
  • the boat preferably has a protective layer for protecting the surface of the groove.
  • the heating section preferably applies a constant voltage to the boat section.
  • the drive section preferably has means for rotating the substrate support section.
  • the vapor deposition apparatus may further include a measuring unit that measures a position of the port unit with respect to the substrate in a plane perpendicular to the moving direction of the vapor deposition unit or the substrate support unit.
  • the vapor deposition apparatus may further include a transport unit that transports the substrate to the substrate support.
  • a vapor deposition chamber for storing the vapor deposition section and the base material supporting section; a preliminary chamber provided next to the vapor deposition chamber; and a vapor deposition chamber provided between the vapor deposition chamber and the preliminary chamber. And a shirt that isolates or releases the air.
  • a vapor deposition method for vapor-depositing a conductive material on an inner surface of a cylindrical base material, wherein a boat part containing the conductive material is inserted into the base material; An evaporation step of heating the boat part to evaporate the conductive material, and a movement of moving at least one of the port part and the base material so that the port part moves relative to the base material in the base material. And a step of providing a vapor deposition method.
  • the moving step preferably includes a rotating step of moving at least one of the boat section and the substrate in one direction and rotating the substrate.
  • the moving step includes a first moving step of moving at least one of the port portion and the base material in the first moving direction while rotating the base material in the first rotation direction, and a base portion in a state where the boat portion and the base material are not moved.
  • the method further includes a second moving step of moving at least one of the boat portion and the base material to a second movement opposite to the first movement direction while rotating in a second rotation direction opposite to the one rotation direction.
  • the moving speed of the boat portion or the substrate in the first moving step and the second moving step is constant.
  • the buttons in the first movement step and the second movement step The moving speed of the tip or the substrate may be substantially equal.
  • the distance that the boat portion or the substrate moves during one rotation of the substrate may be smaller than twice the vapor deposition width of the conductive material.
  • an electron beam exposure apparatus for exposing a pattern on a wafer with an electron beam, comprising: an electron beam generating section for generating an electron beam; and an electron beam generating section for generating an electron beam.
  • An electron beam exposure apparatus comprising: a plurality of electrodes for deflecting; and a deflecting unit having a conductive material deposited on the electrodes.
  • the conductive material is a noble metal.
  • the conductive material is preferably formed on the electrode to a uniform thickness.
  • the deflecting unit may have a cylindrical base material, and the electrode may be provided on an inner surface of the base material. It is preferable that the conductive material is provided on each of the plurality of electrodes facing each other.
  • a deflecting device for deflecting an electron beam, comprising: a cylindrical base material; And a conductive material deposited on the electrode.
  • a method for manufacturing a deflecting device for deflecting an electron beam comprising: an insertion step of inserting a boat portion containing a conductive material into a cylindrical base material; An evaporation step of heating to evaporate the conductive material; and a moving step of moving at least one of the boat part and the base material so that the boat part moves relative to the base material in the base material.
  • a method of manufacturing a deflection device characterized by the following.
  • FIG. 1 is a configuration diagram showing a vapor deposition apparatus according to one embodiment of the present invention.
  • FIG. 2 is a schematic diagram illustrating a vapor deposition unit according to the present embodiment.
  • FIG. 3 is a perspective view showing the boat unit according to the present embodiment.
  • FIG. 4 is a schematic view showing a procedure for depositing a conductive material on the inner surface of a base material by the deposition apparatus according to the present embodiment.
  • FIG. 5 is a schematic diagram showing a procedure for transporting the base material from the preliminary chamber to the vapor deposition chamber in the vapor deposition apparatus according to the present embodiment.
  • FIG. 6 is a cross-sectional view illustrating a vapor deposition unit in a vapor deposition apparatus according to another embodiment of the present invention.
  • FIG. 7 is a perspective view showing a partially enlarged view of the vapor deposition section shown in FIG.
  • FIG. 8 is a configuration diagram of an electron beam exposure apparatus according to one embodiment of the present invention.
  • FIG. 9 is a cross-sectional view of the deflecting unit according to the present embodiment as viewed from the direction of electron beam irradiation.
  • FIG. 1 is a configuration diagram showing a vapor deposition apparatus 10 according to one embodiment of the present invention.
  • the vapor deposition device 10 vapor-deposits a conductive material on the inner surface of the cylindrical base material 50.
  • the vapor deposition device 10 is suitable for vapor-depositing a conductive material on the inner surface of a cylindrical base material 50 having a large aspect ratio.
  • the substrate 50 may have a diameter of 4 to 6 mm and a length of about 100 mm, for example.
  • the vapor deposition apparatus 10 includes a vapor deposition section 20 for vapor-depositing a conductive material on the inner surface of the substrate 50, a substrate support section 30 for supporting the substrate 50, and a boat section 22 for converting the boat section 22 to the substrate 50.
  • a driving unit 40 for moving at least one of the vapor deposition unit 20 and the substrate support unit 30 so as to enter, a heating unit 42 for heating the port unit 22, and a base unit 50 for the boat unit 22.
  • a measuring unit 44 for measuring the position and a transport unit 46 for transporting the substrate 50 to the substrate support unit 30 are provided.
  • the vapor deposition apparatus 10 includes a vapor deposition chamber 12 for storing a vapor deposition section 20 and a substrate support section 30, a preliminary chamber 14 provided next to the vapor deposition chamber 12, a vapor deposition chamber 12 and a preliminary chamber. 1 and 4, and the evaporation chambers 1 and 2 It is desirable to further include a shirt 16 that isolates or opens between the spare room 14.
  • the vapor deposition section 20 has a boat section 22 having a groove for accommodating a conductive material, and a boat fixing section 24 for fixing the port section 22.
  • the vapor deposition section 20 has a cantilever structure in which a boat section 22 is provided at one end and the other end is fixed.
  • the driving section 40 preferably has a rotating means for rotating the base material supporting section 30. It is preferable that the heating section 42 heats the boat section 22 by applying a constant voltage to the port section 22.
  • the measuring section 44 preferably measures the position of the boat section 22 with respect to the substrate 50 in a plane perpendicular to the moving direction of the vapor deposition section 20 or the substrate supporting section 30.
  • the measuring section 44 is preferably a means for optically measuring the position of the boat section 22 with respect to the substrate 50.
  • the measuring section 44 is preferably installed at a position where the inner surface of the substrate 50 can be observed when the substrate supporting section 30 supports the substrate 50.
  • the vapor deposition apparatus 10 may further include control means for controlling the driving section 40 based on the measurement result of the measuring section 44 so that the boat section 22 does not contact the inner surface of the base material 50. Further, the user of the vapor deposition device 10 may manually control the driving unit 40 based on the measurement result of the measuring unit 44.
  • the preparatory chamber 14 has a preparatory substrate supporting portion 32 that supports a preparatory substrate 52 that is a substrate 50 before being introduced into the vapor deposition chamber 12.
  • the transport section 46 introduces the preliminary substrate 52 into the preliminary chamber 14 with the shutter 16 between the vapor deposition chamber 12 and the preliminary chamber 14 closed.
  • the preliminary substrate supporting portion 32 supports the preliminary substrate 52.
  • the pressure in the preliminary chamber 14 is reduced.
  • the transport section 46 transports the preliminary substrate 52 from the preliminary substrate support section 32 to the substrate support section 30. Since the preliminary chamber 14 is decompressed in the same manner as the vapor deposition chamber 12, even when the shirt 16 is opened when the preliminary base material 5 2 is introduced from the preliminary chamber 14 to the vapor deposition chamber 12, The reduced pressure state can be maintained.
  • the vapor deposition device 10 may have a plurality of preliminary chambers 14.
  • the transfer section 46 may transfer the substrate 50 having the inner surface deposited in the evaporation chamber 12 to one of the preliminary chambers 14.
  • the substrate 50 after the vapor deposition is transferred from the vapor deposition chamber 12 to one of the preliminary chambers 14.
  • the preliminary substrate 52 before vapor deposition can be transferred from another preliminary chamber 14 to the vapor deposition chamber 12. Therefore, a conductive material can be efficiently vapor-deposited on the inner surface of the substrate 50.
  • FIG. 2 is a schematic diagram illustrating the vapor deposition unit 20 according to the present embodiment.
  • the vapor deposition section 20 has a boat section 22 having a groove for accommodating a conductive material, and a port fixing section 24 for fixing the boat section 22.
  • the boat fixing part 24 includes, for example, a conductive rod 60 a and a conductive cylinder 60 b made of copper (Cu) as a material, and an insulating tube 6 that insulates between the conductive rod 60 a and the conductive cylinder 60 b. 2 and a holding part (64a, 64b and 464c) for holding the boat part 22.
  • the holding parts (64a, 64b and 64c) are made of a conductor.
  • the holding portion 64a is connected to the conductive cylinder 60b and the boat portion 22, the holding portion 64b is connected to the conductive rod 60a and the holding portion 64c, and the holding portion 64c is Holder 6 4 b and boat part 22 are connected.
  • the heating section 42 applies a certain voltage to the port section 22, the conductive rods 60 a and Z or the conductive cylinders pass through the holding sections (64 a, 64 b and 64 c). Current flows through port 22.
  • arrows indicate the flow of current.
  • the heating section 42 preferably applies a constant voltage to the port section 22.
  • a constant voltage to the port 22.
  • the power does not increase even if the electric resistance of the boat 22 increases when the boat 22 is inserted into the base material 50. Therefore, it is possible to prevent the port portion 22 and the base material 50 from being destroyed due to a rapid increase in electric power.
  • FIG. 3 is a perspective view showing the boat part 22 according to the present embodiment.
  • the boat part 22 includes a boat 70, a groove part 72 for accommodating the conductive material 80, and a protective layer 74 for protecting the surface of the groove part 72.
  • the port 22 preferably has a plurality of grooves 72 formed along the direction in which the port 22 is inserted.
  • the boat 70 is preferably formed using graphite.
  • the boat portion 22 since the boat portion 22 has the plurality of grooves 72, the conductive material 80 accommodated in each groove 72 is melted in each groove 72. Therefore, the conductive material 80 contained in the plurality of grooves 72 of the port 22 evaporates.
  • the deposition range in which the deposition section 20 deposits the conductive material 80 on the base material 50 is widened.
  • the conductive material 80 since the conductive material 80 is dispersed and melted in each groove 72, the conductive material 80 does not become a large spherical mass. In other words, since the conductive material 80 is housed in the groove 72, the conductive material housed in the plurality of grooves 72 forms one large spherical mass when the conductive material 80 is melted. There is no. Therefore, it is possible to prevent the base material 50 from breaking down due to the contact of the conductive material 80 with the inner surface of the base material 50.
  • the protective layer 74 is preferably provided on the surface of the port 70, and is particularly preferably provided on the surface of the groove 72 that contains the conductive material 80.
  • the protective layer 74 is preferably formed of a material having insulation and heat resistance such as alumina.
  • the boat portion 22 since the boat portion 22 has the protective layer 74, even if the port portion 22 is heated and the carbon of the boat 70 including graphite is melted out, the carbon is formed of the conductive material 80. It does not get mixed in. Therefore, deterioration of the conductive material 80 due to the incorporation of carbon can be prevented. Therefore, a high-purity conductive material 80 is deposited on the substrate 50 by vapor deposition.
  • FIG. 4 is a schematic diagram showing a procedure for depositing a conductive material on the inner surface of the base material 50 by the deposition apparatus 10 according to the present embodiment.
  • the drive unit 40 moves the substrate support unit 30 in order to insert the boat unit 22 into the substrate 50.
  • the drive unit 40 may move the vapor deposition unit 20 so as to insert the port unit 22 into the base material 50.
  • the drive section 40 moves the base member support section 30 and the base member 50 to move the boat section 22 to the base member 5.
  • the heating section 42 inserts at one end of 0.
  • the heating section 42 heats the boat section 22 by supplying current to the boat section 22.
  • the heating section 42 heats the port section 22 by applying a constant voltage to the port section 22.
  • the heating section 42 evaporates the conductive material by heating the port section 22.
  • the driving section 40 moves the base support section 30 so that the boat section 22 moves relative to the base 50 within the base 50. 1 Move in the movement direction.
  • the driving section 40 rotates the substrate 50 in the first rotation direction by the rotating means while moving the substrate support section 30 in the first movement direction.
  • the drive section 40 moves the substrate support section 30 in the first movement direction until the boat section 22 is located at the other end of the substrate 50. Then, the movement of the base member 30 is stopped. With the boat 22 and the base 50 stopped, the base support 30 is rotated half a turn in the first rotation direction.
  • the driving section 40 moves the base member support section 30 in the first movement direction until the boat section 22 exceeds the other end of the base member 50 and is positioned outside the base member 50. After that, the movement of the base support 30 may be stopped, and the base support 30 may be rotated half a turn in the first rotation direction with the boat 22 and the base 50 stopped.
  • the driving unit 40 moves the base member 50 in the first direction while rotating the substrate 50 in the second rotation direction opposite to the first rotation direction by the rotating means. Move in the second movement direction opposite to the direction.
  • the driving section 40 moves the base material supporting section 30 at substantially the same speed, at a constant speed, in the first moving direction and the second moving direction.
  • FIG. 4E shows the state of vapor deposition of the conductive material when the conductive material is vapor-deposited in the substrate 50 by the above method.
  • the conductive material deposited on the base material 50 when the driving part 40 moves the base material support part 30 in the first movement direction is indicated by oblique lines.
  • the conductive material is helically vapor-deposited on the base material 50 only by the drive unit 40 moving the base material support unit 30 in the first movement direction, and the conductive material is deposited on the base material 50. There are areas where no material has been deposited.
  • the conductive material deposited on the base material 50 when the drive part 40 moves the base material support part 30 in the second movement direction is indicated by a horizontal line.
  • the drive unit 40 moves the base material support unit 30 in the second movement direction.
  • the conductive material is deposited on the resulting region of the substrate 50 where the conductive material is not deposited.
  • the driving unit 40 moves the base material support unit 30 in the second movement direction so that 0 is rotated half a turn in the first rotation direction.
  • the conductive material can be deposited on a region where the conductive material is not deposited when the base material supporting portion 30 is moved in the first movement direction.
  • the drive unit 40 controls the distance by which the substrate 50 moves in the first movement direction or the second movement direction while the base material 50 makes one rotation in the first rotation direction or the second rotation direction. It is preferable that the width is smaller than twice the vapor deposition width of the conductive material on the inner surface of the material 50.
  • the vapor deposition width is formed on the inner surface of the substrate 50 when the substrate 50 moves in either the first moving direction or the second moving direction, as described in FIG. Refers to the width of the spiral conductive material.
  • the conductive material is deposited thinly at both ends of the deposition width.
  • the thickness of the conductive member deposited on the substrate 50 can be made uniform.
  • FIG. 5 is a schematic diagram showing a procedure for transporting the preliminary substrate 52 from the preliminary chamber 14 to the vapor deposition chamber 12 in the vapor deposition apparatus 10 according to the present embodiment.
  • the transport section 46 has an arm section for holding the spare base material 52.
  • the transport unit 46 lifts the preliminary substrate 52 supported by the preliminary substrate support unit 32 by the arm unit.
  • the transfer section 46 opens the shirt 16 to open the space between the preliminary chamber 14 and the vapor deposition chamber 12.
  • the transport section 46 moves the preliminary base material 52 to the vapor deposition chamber 12.
  • the transfer section 46 moves the substrate 52 to a predetermined position in the vapor deposition chamber 12, and makes the substrate support section 30 support the preliminary substrate 52.
  • the base material supporting unit 30 may lift the spare base material 52 and receive the spare base material 52 from the transport unit 46.
  • the transfer section 46 moves to the preliminary chamber 14.
  • the transfer section 46 closes the shutter 16 to isolate the preparatory chamber 14 from the vapor deposition chamber 12.
  • FIG. 6 is a cross-sectional view showing a vapor deposition unit in a vapor deposition device according to another embodiment of the present invention.
  • the vapor deposition device includes a plurality of port portions 22 each having a groove for accommodating a conductive material, and a plurality of boat fixing portions 22 each for fixing the port portions 22.
  • 4 includes a vapor deposition section 220 having 4.
  • the vapor deposition section 220 further has a heating section 230 for heating the boat section 222.
  • the vapor deposition section 220 has a port section 222 at one end of each boat fixing section 222, and has a cantilever structure in which the other end of each boat fixing section 222 is fixed to the heating section 230. Preferably it is.
  • Each boat section 222 has the same or the same function and configuration as the boat section 222 described with reference to FIGS.
  • each boat fixing portion 224 has the same or similar function and configuration as the boat fixing portion 24 described with reference to FIGS.
  • the vapor deposition section 220 and the heating section 230 have the same or similar functions and configurations as the vapor deposition section 20 and the heating section 42 described with reference to FIG. 1 and FIG.
  • the vapor deposition section 220 in the present embodiment is used for vapor-depositing a conductive material on the inner surface of the deflection section 240 used in an electron beam exposure apparatus that generates a plurality of electron beams.
  • the vapor deposition section 222 preferably has a number of boat sections 222 and a number of boat fixing sections 224 corresponding to the number of cylindrical base materials of the deflecting section 240.
  • FIG. 7 is a perspective view showing a partially enlarged view of the vapor deposition section 220 shown in FIG.
  • the vapor deposition section 220 has a boat section 222 at the tip of the boat fixing section 222.
  • the boat part 222 has a groove part 272 for accommodating the conductive material 280.
  • the plurality of boat sections 222 of the vapor deposition section 220 are respectively introduced into the base material of the deflection section 240, and the port section 222 is formed.
  • the conductive material is vapor-deposited on the inner surface of the substrate of the deflecting unit 240.
  • the boat section 222 is provided at the tip of the port fixing section 222, when the port section 222 is heated and inserted into the base material of the deflection section 240, The conductive material can be uniformly deposited inside the material.
  • FIG. 8 shows a configuration of an electron beam exposure apparatus 100 according to one embodiment of the present invention.
  • the electron beam exposure apparatus 100 includes an exposure unit 102 for performing a predetermined exposure process on the wafer 150 by an electron beam, and a control for controlling the operation of each component included in the exposure unit 102.
  • System 160 for controlling the operation of each component included in the exposure unit 102.
  • the exposure unit 102 generates a plurality of electron beams inside the casing 104, Electron beam shaping means 110 for shaping the cross-sectional shape as desired; and irradiation switching means 130 for independently switching whether or not to irradiate the wafer 150 with a plurality of electron beams for each electron beam,
  • An electron optical system including a wafer projection system 140 for adjusting the direction and size of an image of a pattern transferred to the wafer 150 is provided.
  • the exposure unit 102 includes a stage system including a wafer stage 152 on which the wafer 150 is mounted, and a wafer stage driving unit 154 for driving the wafer stage 152.
  • the electron beam shaping means 110 includes a plurality of electron guns 112 for generating a plurality of electron beams, and a first shaping device having a plurality of openings for shaping the cross-sectional shape of the electron beam by passing the electron beam.
  • Member 1 14 and 2nd shaping member 1 2 2 and 1st multi-axis to independently focus multiple electron beams and adjust the focus of electron beam 1
  • Electron lens 1 16 and 1st shaping It has a first shaping / deflecting unit 118 and a second shaping / deflecting unit 120 for independently deflecting a plurality of electron beams passing through the member 114.
  • the irradiation switching means 130 independently converges the plurality of electron beams and adjusts the focal point of the electron beam, and deflects the plurality of electron beams independently for each electron beam.
  • An electron beam shielding member for shielding the electron beam deflected by the ranking electrode array.
  • blanking electrode array 134 may be a blanking aperture array 'device.
  • the projection system 140 for C has a third multi-axis electron lens 142 that focuses a plurality of electron beams independently and reduces the irradiation diameter of the electron beam, and converges the plurality of electron beams independently, A fourth multi-axis electron lens 144 for adjusting the focus of the beam, a deflecting unit 144 for independently deflecting a plurality of electron beams to desired positions on the wafer 150 for each electron beam, and a wafer. And a fifth multi-axis electron lens 148 that functions as an objective lens for 150 and converges a plurality of electron beams independently.
  • the deflecting unit 146 includes a plurality of deflectors. Each deflector has a plurality of electrodes.
  • the deflecting unit 146 further includes a conductive material 200 deposited on a plurality of electrodes of each deflector.
  • Conductive The material is preferably a noble metal, for example, gold (Au), platinum (Pt), aluminum (A1), or the like.
  • the conductive material is preferably formed on each electrode in a uniform thickness along the direction of electron beam irradiation in the deflection section 146.
  • the control system 160 includes an overall control unit 170 and an individual control unit 180.
  • the individual control section 180 includes an electron beam control section 182, a multi-axis electron lens control section 1884, a shaping / deflection control section 1886, a blanking electrode array control section 1888, and a deflection control. And a wafer stage control unit 192.
  • the general control unit 170 is, for example, a work station, and performs general control of each control unit included in the individual control unit 180.
  • the electron beam control unit 18 controls the electron gun 11.
  • the multi-axis electronic lens controller 18 4 is composed of the first multi-axis electronic lens 1 16, the second multi-axis electronic lens 13 2, the third multi-axis electronic lens 14 2, and the fourth multi-axis electronic lens 1 4 4 Also controls the current supplied to the fifth multi-axis electron lens 148.
  • the shaping / deflecting controller 186 controls the first shaping / deflecting unit 118 and the second shaping / deflecting unit 120.
  • the blanking electrode array controller 188 controls the voltage applied to the deflection electrodes included in the blanking electrode array 134.
  • the deflection control unit 190 controls the voltage applied to the deflection electrodes of the plurality of deflectors included in the deflection unit 146.
  • Wafer stage controller 194 controls wafer stage driver 154 to move wafer stage 152 to a predetermined position.
  • FIG. 9 is a cross-sectional view of the deflection unit 146 according to the present embodiment as viewed from the direction of electron beam irradiation.
  • the deflecting unit 146 has a cylindrical base 202, and the electrode 204 is provided on the inner surface of the base. It is preferable that the conductive material 200 is provided on each of the surfaces where the plurality of electrodes 204 face each other. Further, the conductive material 200 is preferably formed on each electrode 204 with a uniform thickness.
  • the generated electron beam is applied to the first shaping member 114 to be shaped.
  • a plurality of electron beams may be generated by further including means for dividing the electron beam generated by the electron gun 112 into a plurality of electron beams.
  • the first multi-axis electron lens 1 16 independently converges a plurality of rectangularly shaped electron beams, and independently adjusts the focus of the electron beam on the second shaping member 122 for each electron beam.
  • the first shaping / deflecting unit 118 deflects the plurality of rectangularly shaped electron beams to a desired position with respect to the second shaping member independently for each electron beam.
  • the second shaping / deflecting unit 120 deflects the plurality of electron beams deflected by the first shaping / deflecting unit 118 in a direction substantially perpendicular to the second shaping member 122 independently for each electron beam.
  • the second shaping member 122 including a plurality of openings having a rectangular shape is provided with a plurality of electron beams having a rectangular cross-sectional shape applied to each of the openings. It is further shaped into an electron beam having a rectangular cross section.
  • the second multi-axis electron lens 132 converges a plurality of electron beams independently, and independently adjusts the focus of the electron beam with respect to the blanking electrode array 134 for each electron beam.
  • the electron beam focused by the second multi-axis electron lens 13 2 passes through a plurality of apertures included in the blanking electrode array 1 34.
  • the blanking electrode array control unit 188 controls whether or not to apply a voltage to a deflection electrode formed in the blanking electrode array 134 and provided near each aperture.
  • the blanking electrode array 134 switches whether or not to apply the electron beam to the wafer 150 based on the voltage applied to the deflection electrode.
  • the electron beam that is not deflected by the blanking electrode array 134 has its electron beam diameter reduced by the third multi-axis electron lens 142 and passes through an opening included in the electron beam shielding member 136.
  • the fourth multi-axis electron lens 144 independently converges the plurality of electron beams, and independently adjusts the focus of the electron beam with respect to the deflection unit 144 for each electron beam. Is incident on the deflector included in the deflecting unit 146.
  • the deflection control unit 190 controls the plurality of deflectors included in the deflection unit 146 independently.
  • the deflecting unit 146 deflects the plurality of electron beams incident on the plurality of deflectors to a desired exposure position on the wafer 150 independently for each electron beam.
  • the deflecting unit 146 since the deflecting unit 146 has the deposited conductive material 200, the surface of the deflecting unit 146 through which the electron beam passes can be protected by the high-purity conductive material 200. . Therefore, the electron beam exposure apparatus 100 can reduce the influence of charging due to impurities in the electrode 204 of the deflecting unit 146. Therefore, the deflection of the electron beam can be appropriately controlled. Deflection unit 1
  • the plurality of electron beams that passed through the wafer 6 were transferred to the wafer 1 by the fifth multi-axis electron lens 1 48.
  • the focus for 50 is adjusted, and the wafer 150 is irradiated.
  • the wafer stage controller 192 powers the wafer stage 152 in a fixed direction.
  • the blanking electrode array control unit 188 determines apertures through which the electron beam passes based on the exposure pattern data, and controls power for each aperture. Exposure of the desired circuit pattern on the wafer 150 by appropriately changing the aperture through which the electron beam passes according to the movement of the wafer 150, and further deflecting the electron beam by the deflecting unit 146. Becomes possible.
  • a conductive material can be deposited on the inner surface of a cylindrical base material. Further, the electron beam can be accurately deflected in the electron beam exposure apparatus and the deflection apparatus.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mathematical Physics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
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Abstract

L'invention concerne un dispositif d'application (10) permettant de déposer un matériau conducteur sur la surface intérieure d'un matériau cylindrique de base, comprenant une partie d'application (20) présentant une partie de type barquette (22) avec une partie rainurée pour stocker le matériau conducteur, une partie support du matériau de base (50), une partie de commande (40) pour déplacer au moins une des parties d'application (20) et la partie support du matériau de base (30) afin d'insérer la partie de type barquette (2) dans le matériau de base (50), ainsi qu'une partie chauffante (42) pour chauffer la partie de type barquette (22).
PCT/JP2001/010364 2000-12-27 2001-11-28 Procede et dispositif d'application, dispositif d'exposition a un faisceau electronique, dispositif deflecteur et procede de production du dispositif deflecteur WO2002053795A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000398115A JP4684414B2 (ja) 2000-12-27 2000-12-27 蒸着装置、蒸着方法、電子ビーム露光装置、偏向装置及び偏向装置の製造方法
JP2000-398115 2000-12-27

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WO2002053795A1 true WO2002053795A1 (fr) 2002-07-11

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PCT/JP2001/010364 WO2002053795A1 (fr) 2000-12-27 2001-11-28 Procede et dispositif d'application, dispositif d'exposition a un faisceau electronique, dispositif deflecteur et procede de production du dispositif deflecteur

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WO (1) WO2002053795A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006063388A (ja) * 2004-08-26 2006-03-09 Dialight Japan Co Ltd アルミニウム真空蒸着方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4973385A (fr) * 1972-11-15 1974-07-16
JPS59177367A (ja) * 1983-03-25 1984-10-08 Matsushita Electric Ind Co Ltd 試料搬送機構を有する真空蒸着装置
JPS63199865A (ja) * 1987-02-12 1988-08-18 Hitachi Ltd イオンビ−ムミキシング装置
JPH04272170A (ja) * 1991-02-25 1992-09-28 Tokai Carbon Co Ltd 真空蒸着用黒鉛ルツボ
EP0792946A1 (fr) * 1996-02-28 1997-09-03 Balzers und Leybold Deutschland Holding AG Nacelles d'évaporation pour revêtement de substrats
EP0999572A2 (fr) * 1998-11-02 2000-05-10 Advantest Corporation Dispositif de déflextion éléctrostatique pour appareil d'exposition par faisceau d'électrons

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000138036A (ja) * 1998-11-02 2000-05-16 Advantest Corp 電子ビーム照射装置の静電偏向器
JP2003138036A (ja) * 2001-08-20 2003-05-14 Nissha Printing Co Ltd 艶消し印刷フィルムおよび艶消し成形品

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4973385A (fr) * 1972-11-15 1974-07-16
JPS59177367A (ja) * 1983-03-25 1984-10-08 Matsushita Electric Ind Co Ltd 試料搬送機構を有する真空蒸着装置
JPS63199865A (ja) * 1987-02-12 1988-08-18 Hitachi Ltd イオンビ−ムミキシング装置
JPH04272170A (ja) * 1991-02-25 1992-09-28 Tokai Carbon Co Ltd 真空蒸着用黒鉛ルツボ
EP0792946A1 (fr) * 1996-02-28 1997-09-03 Balzers und Leybold Deutschland Holding AG Nacelles d'évaporation pour revêtement de substrats
EP0999572A2 (fr) * 1998-11-02 2000-05-10 Advantest Corporation Dispositif de déflextion éléctrostatique pour appareil d'exposition par faisceau d'électrons

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JP2002198300A (ja) 2002-07-12

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