Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67017—Apparatus for fluid treatment
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
  • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
  • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67242—Apparatus for monitoring, sorting or marking
  • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Definitions

• the present invention relates to a pressure control method, a transfer device, and a class tool, and is particularly suitable for application to a manufacturing process of a semiconductor device, a liquid crystal display device, and the like.
• a cluster tool in which a plurality of process chambers are connected has been widely used in order to perform a plurality of processes without exposing a wafer to the atmosphere.
• a transfer chamber for transferring a wafer into and out of a plurality of process chambers is provided. Then, by controlling the pressure in the transfer chamber and transferring the wafer, the wafer is protected from contaminants due to air or particles.
• the N 2 purge is performed while constantly evacuating the inside of the transfer chamber in order to keep the pressure in the transfer chamber constant.
• FIG. 5 is a cross-sectional view showing a schematic configuration of a class tool to which a conventional pressure control method is applied.
• cassette chambers CC1 and CC2 are connected to transfer chamber TC via gate valves CG1 and CG2, and process chambers PC1 and PC2 are connected via gate valves PG1 and PG2. Connected.
• the above-mentioned cassette chambers CC 1 and CC 2 have the cassette chamber CC 1 A dry pump DP 2 for exhausting the CC 2 is provided. Further, the transfer chamber TC is provided with a dry pump DP3 for exhausting the inside of the transfer chamber TC. The process chambers PC 1 and PC 2 are provided with dry pumps DP 4 and DP 5 and exhaust pumps TP 1 and TP 2 for evacuating the process chambers PC 1 and PC 2 respectively. Have been.
• cassette in the Tochanba CC 1, CC 2 and the transfer chamber TC, N 2 N 2 inlet portion 1-3 for purging is provided ⁇ Moreover, the transfer chamber TC, pressure in the transfer chamber TC In addition to the capacity manometer 4 and the Comptron (Pirani gauge) 5 for detecting pressure, a pressure control port valve PCV for controlling the pressure in the transfer chamber TC is provided.
• the force sets C1 and C2 accommodating the wafer W are installed in the cassette chambers CC1 and CC2.
• the pressure inside the force set chambers CC1 and CC2 is reduced to 170 mTorr.
• evacuation is completed after evacuation to about 170 mTorr.
• the pumps DP 4 and DP 5 and the vacuum pumps TP 1 and TP 2 are evacuated to maintain a pressure of about 0.1 mTorr.
• the pressure in the transfer chamber TC is controlled, and the pressure in the transfer chamber TC is always kept constant (about 100 or 200 rnTorr). As a result, the pressure difference between the chambers is kept within a predetermined range to prevent particles from being rolled up, and the processing gases G 1 and G 2 remaining in the process chambers PC 1 and PC 2 are discharged.
• an object of the present invention is to provide a pressure control method, a transfer device, and a cluster tool capable of efficiently controlling the pressure in a transfer chamber.
• a transfer When transferring the processing target from the cassette chamber to the process chamber via the transfer chamber, the exhaust in the transfer chamber is stopped.
• Equipment can be centralized.
• the method further includes the step of purging the transfer chamber based on an open / closed state of a gate valve of the process chamber.
• the cassette chamber and the transfer chamber can be evacuated alternately, so that even when the cassette chamber and the transfer chamber share a dry pump, air intrusion between these chambers can be prevented. Can be prevented, reducing the cost of equipment. It becomes possible to reduce.
• the transfer means for transferring the processing target from the cassette chamber to the process chamber via the transfer chamber, and exhausting the transfer chamber when transferring the processing target to the process chamber.
• pressure control means for stopping.
• the cassette chamber can be evacuated while the evacuation of the transfer chamber is stopped, so the dry pump can be shared between the transfer chamber and the cassette chamber, and the supply and exhaust equipment can be centralized. Can be.
• a cassette chamber for mounting a processing object, a process chamber for performing the processing of the processing object, the cassette chamber and the process chamber are connected to each other via a gate valve, and A transfer chamber for transferring the processing target from the cut chamber to the process chamber, a dry pump shared by the cassette chamber and the transfer chamber, and a transfer pump for transferring the processing target to the process chamber.
• Pressure control means for stopping the exhaust in the transfer chamber.
• the dry pump can be shared between the transfer chamber and the cassette chamber, and the cost of equipment can be suppressed while suppressing the wafer contamination.
• the pressure control means discharges the inside of the cassette chamber using the dry pump while the discharge in the transfer chamber is stopped.
• the power supply of the dry pump is turned off with the stop of the exhaust of the transfer chamber and the cassette chamber.
• FIG. 1 is a sectional view showing a schematic configuration of a class tool to which a pressure control method according to an embodiment of the present invention is applied.
• FIG. 2 is a flowchart showing a pressure control method according to an embodiment of the present invention.
• FIG. 3 is a timing chart showing a pressure control method according to one embodiment of the present invention.
• FIG. 4 is a diagram showing the number of generated particles by the transport method according to one embodiment of the present invention.
• FIG. 5 is a cross-sectional view showing a schematic configuration of a class tool to which a conventional pressure control method is applied.
• FIG. 1 is a cross-sectional view showing a schematic configuration of a class console to which a pressure control method according to an embodiment of the present invention is applied.
• cassette chambers CC1 and CC2 are connected to transfer chamber TC via gate valves CG1 and CG2, and process chambers PC1 and PC2 are connected to gate valves PG1 and PG2.
• a dry pump DP1 is shared between the cassette chambers CC1, CC2 and the transfer chamber TC, and the cassette pumps CC1, CC2 and the transfer chamber TC are separately exhausted by the dry pump DP1.
• the process chambers PC 1 and PC 2 are provided with dry pumps DP 4 and DP 5 and exhaust pumps TP 1 and TP 2 for evacuating the process chambers PC 1 and PC 2 respectively.
• the force cell Uz Bok chamber CC 1, CC 2 and the transfer chamber TC, N 2 inlet section 1-3 is provided for performing the N 2 Pas one di, further, the transfer chamber TC, the transfer chamber TC Competron 5 for detecting internal pressure is provided.
• FIG. 2 is a flowchart showing a pressure control method according to one embodiment of the present invention.
• the valve V6 is opened and exhaust is performed by the dry pump DP1 in order to prevent contamination by the atmosphere in the transfer chamber TC (step S1).
• the cassettes C1 and C2 accommodating the wafers W are installed in the force set chambers CC1 and CC2. Then, with the gate valves CG1 and CG2 closed, the valve V6 is closed to stop the exhaust of the transfer chamber TC (step S2), and the valves V1 to V4 are opened to open the cassette chamber CC. 1. Exhaust air in CC2 by dry pump DP1 (Step S3).
• the valves V7 to V12 are opened and closed, and exhaust is performed by the dry pumps DP4 and DP5 and the pumps TP1 and TP2.
• the valves VI to V4 are closed to stop the evacuation of the cassette chambers CC1 and CC2 (step S4).
• CG 2 is opened (Step S5), and the wafer W stored in the cassettes C1 and C2 is transferred into the transfer chamber TC by using the transfer arm AM.
• PG2 is opened (Step S6), and the wafer W transferred into the transfer chamber TC is transferred into the process chambers PC1 and PC2.
• the gate valves PG1 and PG2 are closed (step S7).
• the valve V 16 is opened and closed in accordance with the opening and closing of the gate valves PG 1 and PG 2 (steps S 6 and S 7). Only when the gate valve PG 1 PG 2 is opened, the transfer chamber TC performing N 2 purge of the inner (scan Tetsupu S 2 1, S 2 2) . Thus, next can be generated toward ⁇ cormorants airflow from the transfer chamber TC to the process chamber PC 1, PC 2, while suppressing the consumption of N 2, pollutants a process chamber PC l in the transfer chamber TC , And can be discharged via PC2. Further, it is possible to prevent reaction products and the like generated in the process chambers PC1 and PC2 from flowing into the transfer chamber TC.
• the N 2 purge is performed in a state where the flow rate of N 2 is controlled by the orifice OF.
• the process gases G1 and G2 are introduced into the process chambers PC1 and PC2 by opening the valves VI7 and VI8 as necessary. Then, the wafer W is processed (step S8).
• the processing performed in the process chambers PC1 and PC2 includes, for example, CVD, anneal, etching, vapor deposition, sputtering, and On-injection and the like.
• Step S9 When the processing of the wafer W is completed, the gate valves PG1 and PG2 are opened (Step S9). Then, the processed wafer W is unloaded from the process chambers PC1 and PC2 into the transfer chamber TC. When the transfer of the wafers W from the process chambers PC1 and PC2 is completed, the gate valves PG1 and PG2 are closed (step S10). Wafers W unloaded from the process chambers PC1 and PC2 are housed in cassettes C1 and C2.
• valve VI 6 is opened and closed in accordance with the opening and closing of the gate valves PG 1 and PG 2 (steps S 9 and S 10), and the gate valves PG 1 and PG 2 are opened and closed.
• step S 1 The above processing is repeated for all the cassette chambers CC 1 and CC 2 in which the wafers W to be processed are installed.
• the gate valves CG 1 and CG 2 are closed (step S 1
• the evacuation of the transfer chamber TC is stopped by stopping the evacuation of the transfer chamber TC, and the cassette chambers CC1, CC are dried using the dry pump DP1.
• the dry pump DPI can be shared between the cassette chambers CC 1 and C C 2 and the transfer chamber TC.
• the transfer chamber TC since the exhaust in the transfer chamber TC is stopped when the wafer W is transferred, the transfer chamber TC during the transfer of the wafer W is stopped.
• the pressure control in the inside becomes unnecessary, and the capacitance manometer 4 in FIG. 5 and the pressure control valve PCV can be eliminated.
• FIG. 3 is a timing chart showing a pressure control method according to one embodiment of the present invention.
• the wafer W is transferred from the cassette chamber C C1 to the process chamber PC 1 and then transferred from the cassette chamber C C2 to the process chamber PC 2 will be described.
• valve V6 is opened, and the inside of the transfer chamber TC is evacuated by the dry pump DP1. At this time, the pressure in the transfer chamber TC is maintained at about 1 mTorr.
• the cassette C1 accommodating the wafer W is set in the cassette chamber C C1.
• the exhaust in the transfer chamber TC is stopped (T1)
• the valve V1 is opened (T1)
• the cassette chamber CC1 is opened.
• the valve V1 is closed and the valve V2 is opened, and the exhaust in the cassette chamber CC1 is rapidly performed.
• the pressure in the cassette chamber CC1 is maintained at about 170 mTorr, and the exhaust in the transfer chamber TC is stopped, so that the pressure in the transfer chamber TC gradually increases. .
• the inside of the process chamber PC 1 is evacuated by the dry pump DP 4 and the evening pump TP 1 to maintain a pressure of about 0.1 mTorr, and when the evacuation of the cassette chamber CC 1 is completed, the valve is opened. Close V2, stop the exhaust in the cassette chamber CC1, and open the gate valve CG1 (T2). At this time, an airflow is generated due to a pressure difference between the cassette chamber CC1 and the transfer chamber TC. Since the transfer chamber TC1 and the transfer chamber TC are in an air-tight state, and the pressure difference between the cassette chamber CC1 and the transfer chamber TC is slight, the generation of the airflow hardly causes the particles to be wound.
• the gate valve CG1 When the gate valve CG1 is opened, the wafer W stored in the force set C1 is transferred into the transfer chamber TC by using the transfer arm AM. Then, the opening of the gate one Tobarubu PG 1, by opening the valve V 1 6 (T 3), while jetting N 2 gas N 2 inlet section 3 to transport the wafers W to the process Chillan server PC 1.
• opening the valve VI 6 enables the generation of airflow from the transfer chamber TC to the process chamber PC 1 and stops the exhaust in the transfer chamber TC. In this case, particles in the transfer chamber TC can be discharged through the process chamber PC1.
• the processing gas G1 is introduced into the process chamber PC1 by opening the valve V17 as necessary, and the wafer W is processed.
• process chamber PC The pressure in 1 depends on the processing performed in the process chamber PC1. Further, since the exhaust in the transfer chamber TC is stopped, the pressure in the transfer chamber TC gradually increases.
• the gate valve PG 1 When the processing of the wafer W is completed, the gate valve PG 1 is opened, the valve V 16 is opened (T 5), and the wafer W is discharged from the process chamber PC 1 while N 2 gas is ejected from the N 2 introduction section 3. Remove from When the transfer of the wafer W from the process chamber PC 1 is completed, the gate valve PG 1 is closed and the valve V 16 is closed (T 6) to stop the introduction of the N 2 gas into the transfer chamber TC. .
• the cassette C2 accommodating the wafer W is set in the cassette chamber CC2.
• the valve V3 is opened (T7), and the exhaust in the cassette chamber CC2 is gently performed.
• the valve V3 is closed and the valve V4 is opened, and the exhaust in the cassette chamber CC2 is rapidly performed.
• the inside of the process chamber PC2 is evacuated by the dry pump DP5 and the turbo pump TP2, and is maintained at a pressure of about 0.1 mTorr.
• the exhaust of the cassette chamber C C2 is stopped by closing the valve V4, and the gate valve C G2 is opened (T8).
• the gate valve CG2 When the gate valve CG2 is opened, the wafer W accommodated in the cassette C2 is transferred into the transfer chamber TC by using the transfer arm AM. Then, the opening of the gate one Tobarubu PG 2, by opening the valve V 1 6 (T 9), while jetting N 2 gas N 2 inlet section 3 to transport the wafers W to the process chamber PC 2.
• the gate valve PG 2 is closed, the valve V 16 is closed (T 10), and the introduction of the N 2 gas into the transfer chamber TC is stopped. Let it.
• the processing gas G 2 is introduced into the process chamber PC 2 by opening the valve V 18 as necessary, and the wafer W is processed.
• the pressure in the process chamber PC2 differs depending on the processing performed in the process chamber PC2. Further, since the exhaust in the transfer chamber TC is stopped, the pressure in the transfer chamber TC gradually increases.
• the gate valve PG 2 When the processing of the wafer W is completed, the gate valve PG 2 is opened, the valve V 16 is opened (T 11), and the wafer W is discharged from the process chamber PC 2 while the N 2 gas is ejected from the N 2 introduction section 3. Remove from When the transport of the wafer W from the process Chiya Nba PC 2 is finished, closes the gate valve PG 2, closing the valve V 1 6 (T 1 2) , to stop the introduction of the New 2 gas to transfer Chang server in TC .
• FIG. 4 is a diagram showing the number of generated particles by the transport method according to one embodiment of the present invention.
• the wafer W when the wafer W is placed in the cassette chambers CC 1 and CC 2 (standby), when the wafer W is transported between the cassette chambers CC 1 and CC 2 and the process chambers PC 1 and PC 2 (vacuum transport) )
• the wafer W was etched for 30 seconds (RF transport 30 seconds)
• the particles after the initial state running for 10 hours, running for 30 hours, and running for 50 hours 0 2 ⁇ m or more).
• the dry pump DP 1 can be shared between the cassette chambers CC 1 and CC 2 and the transfer chamber TC without causing contamination of the wafer W by particles. And the consumption of N 2 can be reduced.
• the case where the cassette chambers CC1 and CC2 are directly connected to the transfer chamber TC has been described, but the force set chambers CC1 and CC2 may be load lock chambers. .
• the case has been described in which the exhaust in the transfer chamber TC is always stopped during the transfer of the wafer W, but when the pressure in the transfer chamber TC exceeds a predetermined value during the transfer of the wafer W, Alternatively, the inside of the transfer chamber TC may be temporarily exhausted. Further, when the exhaust of the transfer chamber TC and the cassette chambers CC1 and CC2 is stopped, the power of the dry pump DP1 may be turned off, thereby significantly reducing the power consumption of the dry pump DP1. A significant reduction is possible.
• the exhaust pump in the transfer chamber is stopped, so that the dry pump is shared between the cassette chamber and the transfer chamber. This makes it possible to eliminate the need to control the pressure in the transfer chamber when carrying the object to be treated, and to centralize the air supply and exhaust equipment.
• the pressure control method, the transfer device, and the class tool according to the present invention can be used in a semiconductor manufacturing industry or the like that manufactures semiconductor devices, liquid crystal display devices, and the like. Therefore, it has industrial applicability.

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• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

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Citations (4)

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• 2000
  • 2000-12-26 JP JP2000395263A patent/JP2002198411A/ja active Pending
• 2001
  • 2001-12-25 WO PCT/JP2001/011338 patent/WO2002052638A1/ja active Application Filing

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