WO2002035592A1 - Dispositif de polissage - Google Patents

Dispositif de polissage Download PDF

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Publication number
WO2002035592A1
WO2002035592A1 PCT/JP2001/008801 JP0108801W WO0235592A1 WO 2002035592 A1 WO2002035592 A1 WO 2002035592A1 JP 0108801 W JP0108801 W JP 0108801W WO 0235592 A1 WO0235592 A1 WO 0235592A1
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WO
WIPO (PCT)
Prior art keywords
polishing
polished
guide member
guide
protruding portion
Prior art date
Application number
PCT/JP2001/008801
Other languages
English (en)
Japanese (ja)
Inventor
Isao Sugaya
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Publication of WO2002035592A1 publication Critical patent/WO2002035592A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B24B37/32—Retaining rings

Definitions

  • the present invention relates to a polishing apparatus suitable for use in a method for manufacturing a semiconductor device such as ULSI, for example, for flattening and polishing a semiconductor device.
  • CMP chemical mechanical polishing
  • a polishing apparatus that performs polishing by CMP includes a polishing body such as a polishing pad, and a holding unit such as a chuck that holds an object to be polished such as a wafer, and a polisher between the polishing body and the object to be polished.
  • the object to be polished is polished by applying a load between the object to be polished and the object to be polished with the agent interposed therebetween and by moving the object relatively.
  • the first problem is “pad inclination”.
  • the head section has a flexible mechanism with an angle following capability in order to absorb the parallelism error between the pad surface and the chuck surface caused by the processing and the undulation of the wafer surface.
  • This flexibility backfires and tilts to the side where the pad protrudes, resulting in a problem that desired polishing is not performed.
  • the pressure of the pad applied to the wafer is not evenly distributed, resulting in edge frustration, in which the edge of the wafer is cut most, resulting in non-uniform polishing. There was a problem that it would.
  • the second problem is “pad steps”. Pads not protruding from the wafer are crushed by the pressing force, but protruding portions are thicker than the former due to the restoring force of the pad material. The region that has been restored to this thickness by being released from the pressing force comes into contact with the wafer again due to the rotation of the head. At the moment when the step portion gets on the wafer, the released pad surface is rapidly compressed again, so that the pressure applied to the wafer becomes uneven near the edge. The same thing happens the moment the crushed pad is released from the pressure. For these reasons, there has been a problem that desired polishing cannot be obtained near the edge of the wafer.
  • the third problem is “pad pressure”.
  • the pressing force of the node on the wafer has a great influence on the polishing state. Basically, in order to perform uniform polishing on the entire wafer, it is desirable that the pressing force per unit area of the pad be uniform.
  • the contact surface changes because the pad surface sometimes protrudes from the wafer, and consequently the pressing force per unit area changes.
  • the polishing pad will protrude from the wafer even if the polishing pad protrudes from the wafer.
  • a state substantially equivalent to a state of not protruding from the wafer is realized, the first to third problems described above are solved, and the object to be polished can be uniformly polished.
  • the protruding portion of the polishing pad and the guide member rub against each other, there is a risk that the wear of the polishing pad is accelerated and the guide member is also worn.
  • the guide member is basically made of a material having higher wear resistance than the wafer. For this reason, the wear of the polishing pad is further accelerated, and the life of the polishing pad is shortened. Even if a material having excellent wear resistance is used for the guide member, it is preferable that the wear of the guide member progress slowly.
  • the height of the guide members is set so that the heights of the guide members coincide. Is set.
  • the guide members wear and the height difference between them increases. Therefore, it is necessary to adjust the height of the guide member so that the heights of the guide members coincide with each other.
  • the guide member may be replaced without re-adjusting the height, but this increases the cost.
  • the guide section It is necessary to adjust the height of the guide member according to the progress of wear of the material, but it is required that the adjustment can be easily performed.
  • the polishing pad is conditioned at appropriate frequency by a dresser or the like.
  • conditioning could not be performed during wafer polishing, and the wafer polishing throughput was reduced. Disclosure of the invention
  • the present invention has been made in view of such circumstances, and a problem associated with a polishing body such as a polishing pad protruding from an object to be polished to the periphery thereof is supported by a guide member.
  • An object of the present invention is to provide a polishing apparatus that can reduce wear of a guide member and a polishing body while solving the above problem.
  • the present invention solves the problem of the polishing body protruding from the object to be polished to the periphery thereof by supporting the protruding portion with the guide member, and easily adjusting the height of the guide member. It is an object of the present invention to provide a polishing apparatus that can perform polishing in a wide range.
  • An object of the present invention is to provide a polishing apparatus capable of obtaining a body conditioning effect and improving the throughput of polishing an object to be polished.
  • a wafer or the like is held on a chuck having a flexible support mechanism capable of following an angle and the wafer or the like is ground. It has been found that the same problem as the first problem described above also occurs in a polishing apparatus that protrudes from a polishing body such as a polishing pad to the surroundings.
  • an object of the present invention is to provide a polishing apparatus that can solve the same problem as the first problem described above even for such a type of polishing apparatus.
  • a polishing apparatus includes a polishing body, and a holding unit that holds an object to be polished, wherein a polishing agent is provided between the polishing body and the object to be polished.
  • a polishing surface of the polishing object is substantially A guide member that has a guide surface located in the same plane, and that supports the protruding portion of the polishing body that protrudes from the polishing object to the periphery thereof during polishing of the polishing object with the guide surface;
  • the guide member is supported movably independently of the holding portion in a predetermined direction in a plane substantially parallel to a polishing surface of the object to be polished.
  • the guide member since the guide member is provided, the above-described first to third problems associated with the polishing body protruding from the object to be polished to the periphery thereof can be solved.
  • the guide member since the guide member is movably supported independently of the holding portion, for example, as in a third aspect described later, the guide member is driven by a frictional force received from a protruding portion of the abrasive body.
  • the guide member is integrally fixed to the holding portion by driving the guide member following the protruding portion or by driving the guide member in an actual operation as in a fourth embodiment described later.
  • the polishing apparatus according to a second aspect of the present invention is the polishing apparatus according to the first aspect, wherein the guide member is rotatable independently of the holding section around substantially the same axis as the rotation axis of the holding section. , Is supported. By supporting the guide member as in the second aspect, the mechanism is simplified and the cost is reduced.
  • the first embodiment is not limited to this example.
  • the guide member is driven by the protruding portion by a frictional force received from the protruding portion.
  • the guide member since the guide member may be supported in a so-called free manner, the operation is not required, and the cost is reduced.
  • a polishing apparatus is the polishing apparatus according to the first or second aspect, further comprising an actuator for driving the guide member.
  • the relative speed between the protruding portion of the abrasive body and the guide member can be freely set. . Therefore, according to the fourth aspect, for example, as in a fifth aspect described later, the relative speed between the protruding portion of the polishing body and the portion of the guide member facing the protruding portion is reduced, or When the guide member has a dresser region as in the eighth aspect, the relative speed between the protruding portion and the dresser region can be set to a speed suitable for conditioning the polishing body. .
  • the polishing apparatus is the polishing apparatus according to the fourth aspect, wherein the actuating unit is configured to reduce a relative speed between the protruding portion and a portion of the guide member facing the protruding portion. It has a control unit that controls
  • the protruding portion of the abrasive body and the guide member Since the relative speed between the protruding portion and the portion facing the protruding portion decreases, wear of the abrasive body and the guide member can be reduced.
  • the guide member since the guide member is driven by the frictional force received from the protruding portion, it is inevitable that a slip speed is generated as a relative speed between the protruding portion and the guide member.
  • the guide member can be actively moved by the actuating mechanism, such a slip can be removed, and the gap between the protruding portion and the guide member can be eliminated. It is possible to further reduce the relative speed. Therefore, it is possible to further reduce the wear of the polishing body and the guide member.
  • the polishing apparatus is the polishing apparatus according to any one of the first to fifth aspects, further comprising: an exciting unit that excites the guide member so that unevenness due to vibration is formed on the guide surface. It is provided.
  • the vibration is preferably an ultrasonic vibration or another high-frequency vibration, but is not necessarily limited thereto.
  • the excitation unit may generate, for example, a standing wave or a traveling wave on the guide surface.
  • the excitation unit can be configured using various electromechanical energy conversion elements such as a piezoelectric element, an electrostrictive element, and a magnetostrictive element. These points are the same in a ninth embodiment described later.
  • the contact area of the guide surface with the abrasive body is reduced, and the apparent friction coefficient between the two is reduced. Become smaller. Therefore, the wear of the polishing body and the guide member can be further reduced.
  • a conditioning effect of eliminating clogging of the polishing body can be obtained by the vibration. This eliminates the need to condition the polished body during times other than during polishing of the object to be polished, or reduces the frequency of conditioning performed during times other than during polishing, improving the throughput of polishing of the polished object. I do.
  • the polishing apparatus is the polishing apparatus according to any one of the first to sixth aspects, wherein the element causing a volume change in accordance with the applied electric signal comprises:
  • the guide surface is provided such that the relative height of the guide surface with respect to the polished surface of the object to be polished changes.
  • the element for example, a piezoelectric element, an electrostrictive element, or a magnetostrictive element can be used. This is the same in the tenth and eleventh embodiments described later.
  • the height of the guide surface of the guide member can be adjusted by changing the electric signal applied to the element, the adjustment is facilitated.
  • the polishing apparatus is the polishing apparatus according to any one of the first to seventh aspects, wherein at least a part of the guide surface is a dresser region capable of conditioning the polishing body. Things.
  • the guide surface is in the dresser region as in the eighth embodiment, at least a little during polishing of the object to be polished unless the relative speed between the dresser region and the polishing body is completely zero. Conditioning of the abrasive body is performed. Therefore, it is not necessary to perform conditioning of the polished body when the object is not being polished, or the frequency of the conditioning is reduced when the object is not being polished, and the throughput of the object to be polished is improved. I do.
  • a polishing apparatus includes a polishing body, and a holding unit for holding an object to be polished, wherein a polishing agent is interposed between the polishing body and the object to be polished,
  • a polishing apparatus for polishing the object to be polished a load is applied between the object to be polished and the object to be polished, and the object is relatively moved, the surface is substantially in the same plane as the polishing surface of the object to be polished.
  • the guide member since the guide member is provided, it is possible to solve a problem caused by the polishing body protruding from the object to be polished to the periphery thereof. Further, according to the ninth aspect, since irregularities due to vibration are formed on the guide surface of the guide member, the wear of the abrasive body and the guide member can be reduced as in the sixth aspect. And the throughput of polishing the object to be polished is improved.
  • the polishing apparatus is the polishing apparatus according to the ninth aspect, further comprising: an element that causes a volume change according to an applied electric signal, wherein the element is configured to:
  • the excitation unit includes an electromechanical energy conversion element that is provided so that the relative height of the guide surface with respect to the polishing surface of the object to be polished changes, and that also serves as the element.
  • the height of the guide surface of the guide member can be easily adjusted.
  • the element causing the volume change is also used as the electromechanical energy conversion element constituting the excitation section, the cost is reduced.
  • a polishing apparatus includes a polishing body, and a holding unit that holds an object to be polished, wherein a polishing agent is interposed between the polishing body and the object to be polished.
  • the polishing object is substantially in the same plane as the polishing surface of the object to be polished.
  • the guide member since the guide member is provided, it is possible to solve a problem caused by the polishing body protruding from the object to be polished to the periphery thereof. According to the eleventh aspect, similarly to the seventh aspect, the height of the guide surface of the guide member can be easily adjusted.
  • a polishing apparatus includes a polishing body, and a holding unit for holding an object to be polished, wherein a polishing agent is interposed between the polishing body and the object to be polished.
  • a polishing apparatus for polishing the object to be polished by applying a load between the polishing body and the object to be polished and moving the object relatively the polishing object is substantially in the same plane as the polishing surface of the object to be polished.
  • a guide surface having a guide surface positioned thereon, and a guide member for supporting the protruding portion of the polishing body, which protrudes from the polishing target object to the periphery thereof when polishing the polishing target object, with the guide surface; At least a part of the guide surface is a dresser region where conditioning of the polishing body is possible.
  • the guide member since the guide member is provided, it is possible to solve a problem caused by the polishing body protruding from the object to be polished to the periphery thereof.
  • the relative speed between the dresser region and the polishing body is not completely zero, any polishing during polishing of the polishing target is performed. Body conditioning is performed, and the throughput of polishing the object to be polished is improved.
  • the polishing apparatus in the polishing apparatus according to the first aspect, wherein the guide member is independent of the holding portion in a predetermined direction in a plane substantially parallel to a polishing surface of the object to be polished. And an actuating unit that is movably supported and drives the guide member.
  • a relative speed between the protruding portion and the dresser region is provided.
  • a control unit for controlling the operation is provided so that the degree becomes a speed suitable for conditioning the polishing body.
  • the relative speed between the protruding portion and the dresser region becomes a speed suitable for conditioning the polishing body.
  • the polishing body is more effectively conditioned during polishing of the object to be polished, and the throughput of polishing of the object to be polished is further improved.
  • the polishing apparatus is the polishing apparatus according to the thirteenth aspect, wherein, when the protruding portion and the dresser region do not face each other, the control portion includes the protruding portion and the guide member.
  • the actuator is controlled so that the relative speed with respect to the portion facing the protruding portion is reduced.
  • the relative position between the protruding portion of the polishing body and the portion of the guide member that faces the protruding portion since the speed is reduced, wear of the abrasive body and the guide member can be reduced.
  • the polishing apparatus according to a fifteenth aspect of the present invention is the polishing apparatus according to the thirteenth or fourteenth aspect, wherein the guide member is independent of the holding part around substantially the same axis as the rotation axis of the holding part. It is supported so that it can rotate freely.
  • the mechanism is simplified and the cost is reduced.
  • the first and fourth embodiments are not limited to this example.
  • a polishing apparatus includes a polishing body, and a holding unit for holding an object to be polished, wherein a polishing agent is interposed between the polishing body and the object to be polished.
  • a polishing apparatus for polishing the object to be polished The polishing object having a guide surface positioned substantially in the same plane as the polishing surface of the polishing body when polishing the polishing object, and protruding from the polishing body to the periphery thereof when polishing the polishing object.
  • a guide member is provided for supporting the protruding portion of the object on the guide surface.
  • the guide member supports the protruding portion of the polishing body which protrudes from the object to be polished to the periphery thereof during polishing of the object to be polished.
  • the support members differ from each other in that the polishing member supports the protruding portion of the polishing object that protrudes from the polishing body to the periphery when the polishing object is polished.
  • the problem (the same problem as the first problem described above) caused by the object to be polished protruding from the polished body to the periphery thereof is solved. be able to.
  • the polishing apparatus is the polishing apparatus according to the sixteenth aspect, wherein the guide member is provided in a predetermined direction substantially in the same plane as a polishing surface of the polishing body when polishing the object to be polished. It is movably supported independently of the polishing body. According to the seventeenth aspect, the same advantage as the advantage of the second aspect can be obtained.
  • the sixteenth and seventeenth aspects may have the features corresponding to the features of the third to seventh aspects, either alone or in any combination.
  • FIG. 1 is a schematic cross-sectional view schematically showing a state of a polishing apparatus according to a first embodiment of the present invention during polishing.
  • FIG. 2 is an enlarged view of the vicinity of the portion C in FIG.
  • FIG. 3 is a view taken in the direction of the arrows DD ′ in FIG.
  • FIG. 4 is a schematic plan view showing a comparative example.
  • FIG. 5 is a schematic enlarged cross-sectional view schematically showing a main part of a polishing apparatus according to a second embodiment of the present invention.
  • FIG. 6 is an exploded perspective view schematically showing a main part of a polishing apparatus according to a third embodiment of the present invention.
  • FIG. 7 is a schematic plan view showing a polishing apparatus according to the second embodiment of the present invention.
  • FIG. 8 is a schematic enlarged cross-sectional view schematically showing a main part of a polishing apparatus according to a fourth embodiment of the present invention.
  • FIG. 9 is an exploded perspective view showing a main part of a polishing apparatus according to a fourth embodiment of the present invention.
  • FIG. 10 is a diagram showing a driving circuit of a piezoelectric element and a state of excitation.
  • FIG. 11 is a waveform diagram showing an example of a voltage applied to the piezoelectric element.
  • FIG. 12 is an explanatory diagram showing the state of excitation.
  • FIG. 13 is a waveform diagram showing another example of the voltage applied to the piezoelectric element.
  • FIG. 14 is a waveform diagram showing still another example of the voltage applied to the piezoelectric element.
  • FIG. 15 is a schematic cross-sectional view schematically showing a polishing apparatus according to a fifth embodiment of the present invention during polishing. BEST MODE FOR CARRYING OUT THE INVENTION
  • FIG. 1 is a schematic cross-sectional view schematically showing a state of a polishing apparatus according to a first embodiment of the present invention during polishing.
  • FIG. 2 is an enlarged view of the vicinity of the portion C in FIG.
  • FIG. 3 is a view taken in the direction of arrows D--D in FIG.
  • the polishing apparatus according to the present embodiment supplies a polishing member 1, a holding portion 3 that holds a process wafer 2 as a polishing target below the polishing member 1, and supplies an abrasive (slurry) onto the wafer 2.
  • a polishing agent supply section 4 and a guide member 5 for supporting a protruding portion of a polishing body 7 protruding from the wafer 2 to the periphery thereof during polishing of the wafer 2 with a guide surface 5a are provided.
  • the guide surface 5 a of the guide member 5 is located substantially in the same plane as the polished surface of the wafer 2.
  • the polishing member 1 is obtained by fixing a polishing body (polishing pad) 7 on the lower surface of a polishing platen 6. As shown by arrows J, K, and M in FIGS. , Rotation, up and down movement, and left and right swinging (reciprocating movement).
  • a polishing body 7 for example, a sheet-like foamed polyurethane, a non-foamed resin having a groove structure on the surface, or the like can be used.
  • the holding unit 3 includes a chuck 8 having a large number of air passages (not shown) and capable of vacuum-sucking the wafer 2 on the upper surface, a chuck table 9 for supporting the chuck 8, and a member 10 constituting a rotating shaft. It has a known structure.
  • the holding section 3 is provided with a pipeline 11 for vacuum suction or the like.
  • the wafer 2 is held on the holding unit 3 by vacuum suction, and the upper surface of the wafer 2 is a polished surface.
  • the holding section 3 is rotatable as shown by an arrow N in FIG. 1 by a mechanism (not shown) using an electric motor as an actuator.
  • the diameter of the polishing member 1 is smaller than the diameter of the wafer 2.
  • the polishing member 1 swings in the direction indicated by the arrow M so that a part of the polishing body 7 temporarily protrudes from the wafer 2 to the periphery thereof as shown in FIGS. 1 and 3. It has become.
  • the guide member 5 is supported movably independently of the holding portion 3 in a predetermined direction in a plane substantially parallel to the polished surface of the wafer 2.
  • the guide member 5 is made of zirconium It is formed in a ring shape from a ceramic material or the like having excellent wear resistance, such as alumina, and is disposed along the outer periphery of the holding portion 3 coaxially with the holding portion 3.
  • the upper surface of the guide member 5 is a guide surface 5a that supports the protruding portion of the polishing body 7 during polishing.
  • the guide member 5 is attached to the member 13 via a ring-shaped pairing 12 provided coaxially with the holding portion 3, and is connected to the holding portion 3 by the member 13 via the bearing 12. It is supported coaxially and independently of the holding part 3 so as to be freely rotatable.
  • the member 13 is a member that rotatably supports the holding portion 3 in the direction of the arrow N or a member fixed thereto.
  • the member 13 may be an index table or a member fixed thereto.
  • the index table supports the plurality of holding sections 3 rotatably. If an index table is used, when one holding unit 3 is located on the polishing stage, another holding unit 3 is located on the mouthing stage or the unmouthing stage, and a plurality of wafers 2 can be efficiently placed. Can be polished.
  • the polishing apparatus according to the present invention may have only a single holding section 3.
  • the guide member 5 and the member 13 are formed so that the gap between the guide member 5 and the member 13 forms a maze. (Labyrinth) structure is adopted.
  • a sealing member made of rubber or the like may be used to prevent the abrasive from flowing around the bearing 12.
  • the guide member 5 may be attached to the holding portion 3 via a bearing.
  • the guide member 5 is supported by the holding portion 3, but can rotate freely independently of the holding portion 3.
  • the polishing member 1 rotates in the direction of arrow J while rotating in the direction of arrow J, and is pressed against the upper surface of the wafer 2 on the holding unit 3 with a predetermined pressure.
  • the holder 3 is rotated in the direction of the arrow N, and the wafer 2 is also rotated in the direction of the arrow N, so that relative movement between the wafer 2 and the polishing member 1 is performed.
  • the rotation direction of the wafer 2 (arrow N direction) and the rotation direction of the polishing body 7 (arrow J direction) are opposite to each other.
  • the abrasive is supplied from the abrasive supply unit 4 onto the wafer 2, and the abrasive is diffused on the wafer 2, and the abrasive body 7 and the wafer 2 are moved along with the relative movement of the abrasive member 1 and the wafer 2.
  • the mechanical polishing by the relative movement of the polishing member 1 and the wafer 2 and the chemical action of the polishing agent act synergistically to perform good polishing.
  • the guide member 5 is supported coaxially with the holding portion 3 so as to be freely rotatable independently of the holding portion 3, as shown in FIG.
  • the abrasive body 7 is driven by the protruding portion of the abrasive body 7 by the frictional force received from it, and rotates in the direction of arrow P. Therefore, the peripheral speed of the protruding portion of the polishing body 7 is substantially the same as the peripheral speed of the portion of the guide member 5 facing the protruding portion, and the relative speed between the two is substantially zero except for slippage. Therefore, according to the present embodiment, the abrasive body 7 and the guide portion The wear of material 5 is significantly reduced.
  • the peripheral speed of the guide member 5 is substantially equal to the peripheral speed of the polishing body 7, the abrasive and particles of the wafer 2 generated by polishing are discharged without receiving unnecessary external force. It becomes difficult to penetrate into the fibers of the body 7, and the abrasive body 7 is hardly clogged.
  • FIG. 4 is a schematic plan view corresponding to FIG. 3.
  • the same or corresponding elements as those in FIG. 3 are denoted by the same reference numerals, and redundant description is omitted.
  • the guide member 5 is integrally fixed to the holding portion 3 and rotates in the direction of the arrow P ′ that is the same as the rotation direction of the wafer 2 (the direction of the arrow N).
  • the relative speed between the protruding portion of the polishing body 7 and the portion of the guide member 5 facing the protruding portion is significantly increased, and the abrasion of the polishing body 7 and the guide member 5 is increased.
  • the relative speed between the guide member 5 and the polishing body 7 is large, particles of the wafer 2 generated by the polishing agent and the polishing are likely to be discharged by receiving unnecessary external force.
  • the abrasive body 7 is easily clogged because it easily enters the inside of the fiber. Note that even when the guide member 5 is integrally fixed to the member 13, the relative speed is considerably increased, so that the abrasive body 7 and the guide member 5 also wear and the abrasive body 5 are increased. 7 is easily clogged.
  • FIG. 5 is a schematic enlarged cross-sectional view schematically showing a main part of a polishing apparatus according to a second embodiment of the present invention, and corresponds to FIG. 2 described above.
  • FIG. 7 is a schematic plan view of the polishing apparatus according to the present embodiment, and corresponds to FIG. 3 described above.
  • the same or corresponding elements as those in FIGS. 2 and 3 are denoted by the same reference numerals, and redundant description will be omitted.
  • This embodiment is different from the first embodiment only in the points described below.
  • an electric motor 21 as an actuator for driving the guide member 5 is added, and the motor 21 is controlled by the motor controller 24.
  • a ring-shaped gear 22 arranged coaxially with the holding portion 3 and having teeth formed on the outer periphery is fixed to the outer periphery of the lower portion of the guide member 5.
  • a gear 23 fixed to the output shaft 21 a of the motor 21 is engaged with the gear 22, and driven by the motor 21, so that the guide member 5 is coaxial with the holding portion 3. It is being rotated.
  • the relative speed between the protruding portion of the polishing body 7 and the guide member 5 can be freely set. be able to.
  • the control unit 24 controls the motor 21 so that the relative speed between the protruding portion of the polishing body 7 and the guide member 5 is reduced (for example, the relative speed is minimized).
  • the control unit 24 controls the motor 21 so that the relative speed between the protruding portion of the polishing body 7 and the guide member 5 is reduced (for example, the relative speed is minimized).
  • heart during rotation of the wafer 2 i.e., the rotation center of the holder 3
  • polishing body 7 2 a straight line and a point ⁇ i and the point ⁇ 2 rotating each intersection of the middle point of intersection with the inner periphery and the outer periphery of the guide member 5 a, a length of a line 0 2 a L (t), the length of the segment 0 1 a of L 2, the polishing body 7 Speed r!
  • Equation (1) indicates a condition under which the moving speed of the guide member 5 at the point A becomes equal to the moving speed of the polishing body 7 at the point A.
  • the direction (arrow M Direction) of the polishing body 7 swings coincides with the direction of the straight line including the point 0 i and the point 0 2.
  • (t), ⁇ (t), and r2 (t) are values that change with time.
  • control unit 24 writes the information of (t), r2 (t) and (t) into
  • the rotation of the polishing body 7 can be obtained from a control unit (not shown) that controls the rotation and rotation of the holding unit 3, an encoder, and other detectors.
  • the speed of the slip is defined as the relative speed between the protruding portion of the polishing body 7 and the guide member 5. That is inevitable.
  • the guide member 5 is actively rotated so as to satisfy the above expression (1), the above-described slip is reduced, and the protruding portion of the polishing body 7 is reduced.
  • the relative speed between the shaft member and the guide member 2 is further reduced, and the wear of the polishing body 7 and the guide member 5 is further reduced.
  • FIG. 6 is an exploded perspective view schematically showing a main part of a polishing apparatus according to a third embodiment of the present invention.
  • the same or corresponding elements as those in FIGS. 2 and 3 are denoted by the same reference numerals, and redundant description will be omitted.
  • This embodiment differs from the third embodiment only in the points described below.
  • the dresser 31 is embedded in a part of the guide member 5.
  • the dresser 31 has, for example, a structure in which diamond abrasive grains are fixed to a stainless steel plate with an adhesive or the like, and the abrasive grain surface 31 a is in the same plane as the guide surface 5 a of the guide member 5. positioned.
  • the guide member 5 and the dresser 31 as a whole constitute a guide member that supports the protruding portion of the polishing body 7.
  • the abrasive surface 31 a of the dresser 31 and the guide surface 5 a of the guide member 5 as a whole constitute a guide surface for supporting the protruding portion of the polishing body 7.
  • the abrasive surface 31 a constitutes a dresser region where conditioning of the polishing body 7 is possible.
  • the control unit 24 sets the relative speed between the protruding portion of the polishing body 7 and the dresser region 31 a to the polishing speed.
  • Control Control the speed of the motor 21 so that the speed is appropriate.
  • the control section 24 faces the protruding portion of the polishing body 7 and the protruding portion of the polishing body 7 in the guide member 5.
  • the motor 21 is controlled so that the relative speed with respect to the portion is reduced, for example, so as to satisfy the above-described equation (1).
  • the amount of protrusion of the polishing body 7 increases, for example, once every several cycles, so that the conditioning by the dresser region 31a acts on the entire surface of the polishing body 7.
  • the polishing body 7 may be swung in the direction of the arrow M as described above.
  • conditioning of polishing body 7 can be performed by dresser region 31a even during polishing of wafer 2, so that polishing body 7 needs to be conditioned at times other than during polishing of wafer 2. Or the frequency of conditioning performed during times other than polishing is reduced, and the throughput of polishing the wafer 2 is improved.
  • the control unit 24 may always control the motor 21 so as to satisfy, for example, the expression (1).
  • the guide surface 5a-portion may be the dresser 31a. Even in these cases, conditioning of the polishing body 7 is performed to some extent by the dresser region 31a, so that the frequency of conditioning performed during times other than polishing is reduced, and the throughput of polishing the wafer 2 is improved. .
  • a part of the guide surface 5a of the guide member 5 is set as the drain region 31a, but the entire guide surface 5a of the guide member 5 may be set as the drain region. .
  • the guide member 5 may be configured with only the dresser.
  • the control unit 24 normally controls the motor 21 so as to satisfy the above-mentioned formula (1), for example. Relative speed between area and abrasive body 7
  • the motor 21 may be controlled such that the degree is minimized and the relative speed between the dresser region and the polishing body 7 is adjusted to a speed suitable for conditioning, periodically or when necessary.
  • FIG. 8 is a schematic enlarged cross-sectional view schematically showing a main part of a polishing apparatus according to a fourth embodiment of the present invention, and corresponds to FIG. 2 described above.
  • FIG. 9 is an exploded perspective view showing a main part of the polishing apparatus according to the present embodiment. Note that the upper and lower sides in FIG. 9 are opposite to the upper and lower sides in FIG. 8, but the following description is based on the upper and lower sides in FIG.
  • FIG. 10 is a diagram showing the driving circuit 50 of the piezoelectric element 40 and the state of excitation.
  • FIG. 11 is a waveform diagram showing an example of a voltage applied to the piezoelectric element 40.
  • FIG. 12 is an explanatory diagram showing the state of excitation. 8 and 9, the same or corresponding elements as those in FIGS. 1 and 2 are denoted by the same reference numerals, and redundant description will be omitted.
  • This embodiment is different from the first embodiment only in the points described below.
  • a piezoelectric element 40 is added as an excitation unit that excites the guide member 5 so that irregularities due to vibration are formed on the guide surface 5a of the guide member 5.
  • the piezoelectric element 40 is composed of a ring-shaped piezoelectric body 41 whose polarization direction is the thickness direction indicated by an arrow X in FIG. 9, one ring-shaped electrode plate 42 for a ring, and eight It is composed of an A-phase electrode plate 43A and eight B-phase electrode plates 43B.
  • a piezoelectric body 42 is adhered coaxially to the guide member 5 via a grounding electrode plate 42.
  • the ground electrode plate 42 is slid on a slip ring 44 fixed coaxially with the holding portion 3 at an appropriate position on the member 13. It has a brush portion 42 a that is in contact with it.
  • the A-phase electrode plate 43A is placed on every other eight areas 41A.
  • the B-phase electrode plates 43B are respectively bonded on the remaining eight regions 41B.
  • the electrode plate 43A has a brush part 43a slidingly contacting a slip ring 45 fixed coaxially with the holding part 3 at another appropriate position of the member 13.
  • the electrode plate 43B has a brush part 43b that slides on a slip ring 46 fixed coaxially with the holding part 3 at another appropriate position of the member 13.
  • the A-phase electrode plate 43A and the B-phase electrode plate 43B are configured not to be electrically short-circuited to each other.
  • the piezoelectric element 40 is provided with bearings 12, 48 via ring-shaped mounting members 47, 48 arranged coaxially with the holding portion 3 on the inner peripheral side and the outer peripheral side, respectively. It is attached to 4 9 respectively.
  • the mounting members 47 and 48 are fixed to the inner and outer peripheral positions on the lower surface of the electrode plates 43A and 43B, respectively.
  • the bearing 49 is added in addition to the bearing 12 in order to more stably support the guide member 5 and rotatably support the guide member 5 coaxially with the holding portion 3. It is not necessary to add a bearing 49.
  • the material of the guide member 5 it is preferable to use a material having excellent wear resistance and suitable for excitation, for example, a zirconium-based / alumina-based ceramic.
  • FIG. 10 shows the guide member 5 and the piezoelectric element 40 expanded along the circumferential direction, and shows an example of a drive circuit 50 for driving the piezoelectric element 40.
  • the drive circuit 50 includes an AC power supply 51 and a phase shifter 52 that shifts the output voltage of the AC power supply by 180 ° and outputs the result. Soshi
  • the driving circuit 50 is electrically connected to the electrodes 42, 43 A and 43 B via the slip rings 44 to 46 (not shown in FIG. 10) as shown in FIG.
  • an AC voltage Va as shown in FIG. 11 (a) is applied between each electrode 43A and the electrode 42.
  • the frequencies of the AC voltages V a and V b are different from the eighth-order bending mode frequency so that the eighth-order bending mode of the ring-shaped member composed of the guide member 5 and the piezoelectric element 40 is excited. Have been equal.
  • FIG. 12A shows the expansion and contraction of the piezoelectric body 41 and the unevenness of the guide surface 5a of the guide member 5 at the time corresponding to the broken line curve in FIG.
  • FIG. 12B shows the expansion and contraction of the piezoelectric body 41 and the unevenness of the guide surface 5a of the guide member 5 at the time corresponding to the dashed line curve in FIG.
  • the surface of the guide member 5 since the surface of the guide member 5 has irregularities due to the standing wave on the guide surface 5a, the contact area of the guide surface 5a with the abrasive body 7 is reduced, and the apparent surface between the two members is apparent. Significantly lowers the coefficient of friction. Therefore, according to the present embodiment, abrasion of abrasive body 7 and guide member 5 is further reduced. Moreover, the conditioning effect of eliminating clogging of the polishing body 7 can be obtained by the minute ultrasonic vibration.
  • the guide member 5 may be excited by the piezoelectric element 40 only for the purpose of obtaining this effect. In this case, excitation may not always be performed during polishing of the wafer 2 but may be performed only when a conditioning effect is to be obtained.
  • the same effect can be obtained by generating a traveling wave instead of a standing wave on the guide surface 5a.
  • a phase shifter that shifts by 90 ° may be used instead of the phase shifter 52 that shifts by 180 °.
  • the bearings 12 and 49 support the holder 3 so as to be rotatable independently of the holder 3 coaxially with the holder 3, but these bearings 12 and 49 are removed,
  • the mounting members 47 and 48 may be fixed to the member 13.
  • the contact area of the guide surface 5a with the polishing body 7 is reduced by the standing wave, so that the effect of reducing the wear of the polishing body 7 and the guide member 5 can be obtained, and The above-described conditioning effect can also be obtained.
  • the height of the guide surface 5a of the guide member 5 can be adjusted extremely easily. For this reason, even if the guide member 5 is worn over a long period of use and needs to be readjusted in the height direction, the adjustment is extremely simple.
  • the distance between each electrode 43A and the electrode 42 and the distance between each electrode 43B and the electrode 42 are In Fig. 14 (a) and (b), DC voltages Va and Vb that can be adjusted in level and do not include the alternating current component shown in Fig. 14 (a) and (b) may be applied. In this case, it is not necessary to divide the electrode into eight electrodes 43A and eight electrodes 43B, and it is needless to say that one electrode may be used instead.
  • the guide member 5 is added to the present embodiment in the same manner as the second embodiment is obtained by adding the motor 21 for driving the guide member 5 to the first embodiment. A driving mode may be added.
  • a part of the guide surface 5a of the guide member 5 and the guide surface 5a of the guide member 5 are similar to the third embodiment described above.
  • the whole of a may be used as a dresser area.
  • FIG. 15 is a schematic cross-sectional view schematically showing a polishing apparatus according to a fifth embodiment of the present invention during polishing.
  • the same reference numerals are given to the same or corresponding elements as the elements in FIGS. 1 and 2, and the overlapping description will be omitted.
  • the abrasive supply section 4 is not shown.
  • This embodiment is different from the first embodiment only in the points described below.
  • the positional relationship between holding portion 3 holding wafer 2 and polishing member 1 is upside down.
  • the holding unit 3 has a flexible support mechanism 71 having an angle following property, and the held wafer 2 is freely supported in the tilt direction.
  • the polishing member 1 can be rotated by a mechanism (not shown) as shown by an arrow N ′ in FIG.
  • the holding unit 3 is configured to be able to rotate, move up and down, and swing right and left (reciprocate) as shown by arrows JK, ⁇ , and FIG. 15 by a mechanism (not shown).
  • a part of the wafer 2 temporarily protrudes from the polishing body 7 to the periphery thereof as shown in FIG. I have.
  • the guide member 5 is provided so that the protruding portion of the wafer 2 that protrudes from the polishing body 7 to the periphery thereof when the wafer 2 is polished is supported by the guide surface 5a. It is arranged around. At the time of polishing the wafer 2, the polishing body 7 is deformed by the pressure applied by the wafer 2 and the height of the polished surface of the polishing body 7 is reduced, so that the height of the guide surface 5 a of the guide member 5 is The height is set so as to substantially match the height of the polished surface of the polished body 7. That is, the guide surface 5 a of the guide member 5 is located substantially in the same plane as the polishing surface of the polishing body 2 when polishing the wafer 2. In the present embodiment, when the wafer 2 protrudes from the polishing body 2, the inner peripheral portion of the upper portion of the guide member 5 is smoothly moved onto the guide surface 5 a of the guide member 5. A chamfer 5b is formed on the side.
  • the guide member 5 is rotatably supported in the same manner as in the first embodiment, but is attached via a bearing 12 to a member 72 that rotatably supports the polishing member 1.
  • the polishing body 7 can freely move (in this embodiment, can rotate coaxially with the polishing body 7) in a predetermined direction substantially in the same plane as the polishing surface of the polishing body 7 when polishing the wafer 2. , Are supported. If the guide member 5 is not provided, if the wafer 2 protrudes from the polishing body 7, the angle followability of the support mechanism 71 of the holding unit 3 is backfired, and the wafer 2 is inclined to the protruding side. Is not polished.
  • the protruding portion of the wafer 2 that protrudes from the polishing body 2 to the periphery thereof is supported by the guide member 5, so that the wafer 2 does not protrude from the polishing body 7. A state substantially equal to the state is realized, and polishing of the wafer 2 is performed uniformly.
  • the guide member 5 since the guide member 5 is supported coaxially with the polishing body 7 so as to be freely rotatable independently of the holding portion 3, the guide member 5 is provided similarly to the first embodiment. Advantages are obtained such that the wear of the member 5 is significantly suppressed.
  • the guide member 5 may be fixed to the member 72 or may be fixed to the polishing member 1.
  • the material of the guide member 5 is a wear-resistant material such as a ceramic.
  • resin-based PTFE polytetrafluoroethylene
  • PEEK polyether ether ketone
  • the fifth embodiment is modified in the same manner as in the first to third embodiments to obtain the second to fourth embodiments and their modifications (except for the dresser).
  • various other embodiments of the present invention can be obtained.
  • the present invention can be used for, for example, planarization polishing of a semiconductor device in a process of manufacturing a semiconductor device such as ULSI.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Selon cette invention, une partie d'un élément (7) de polissage qui fait saillie en direction de la périphérie d'une plaquette (2), lorsque cette dernière est polie, est soutenue par une surface de guidage (5a) d'un élément de guidage annulaire (5), la surface de guidage (54) étant positionnée dans presque le même plan que la surface de polissage de la plaquette (2). L'élément de guidage (5) est relié à un élément (13) par l'intermédiaire d'un support, et est soutenu de manière rotative et coaxiale avec une unité de retenue (3) supportant la plaquette (2) et de manière indépendante par rapport à cette unité. L'élément de guidage (5) est entraîné par la partie en saillie de l'élément de polissage (7), à l'aide d'une force de friction. En conséquence, la vitesse relative de la partie en saillie de l'élément de polissage (7) et de l'élément de guidage (5) est très basse, et la friction entre ces deux éléments est réduite.
PCT/JP2001/008801 2000-10-24 2001-10-05 Dispositif de polissage WO2002035592A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-323474 2000-10-24
JP2000323474A JP2002134448A (ja) 2000-10-24 2000-10-24 研磨装置

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WO2002035592A1 true WO2002035592A1 (fr) 2002-05-02

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WO (1) WO2002035592A1 (fr)

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Publication number Priority date Publication date Assignee Title
TWI386989B (zh) 2005-02-25 2013-02-21 Ebara Corp 研磨裝置及研磨方法
JP5080904B2 (ja) 2007-08-27 2012-11-21 昭和電工株式会社 記憶媒体の製造方法
JP5267918B2 (ja) * 2008-07-15 2013-08-21 株式会社ニコン 保持装置および研磨装置
US9238293B2 (en) * 2008-10-16 2016-01-19 Applied Materials, Inc. Polishing pad edge extension
KR101170760B1 (ko) * 2009-07-24 2012-08-03 세메스 주식회사 기판 연마 장치
US9254547B2 (en) * 2010-03-31 2016-02-09 Applied Materials, Inc. Side pad design for edge pedestal
US9120194B2 (en) * 2011-07-21 2015-09-01 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for wafer grinding
JP5737325B2 (ja) * 2013-05-07 2015-06-17 株式会社ニコン 保持装置、加工装置及び研磨装置
WO2019154630A1 (fr) * 2018-02-06 2019-08-15 Asml Netherlands B.V. Système, dispositif et procédé servant à reconditionner un support de substrat
CN111390750B (zh) * 2020-03-25 2021-09-03 福建北电新材料科技有限公司 晶片面型加工装置

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JPH08148453A (ja) * 1994-11-24 1996-06-07 Sumitomo Metal Ind Ltd ウエハ保持具
US5885142A (en) * 1996-06-28 1999-03-23 Nec Corporation Device for cleaning a liquid crystal panel
US5931722A (en) * 1996-02-15 1999-08-03 Tadahiro Ohmi Chemical mechanical polishing apparatus
JPH11262854A (ja) * 1997-12-15 1999-09-28 Canon Inc 精密研磨装置および該精密研磨装置を用いた精密研磨方法
JP2000334655A (ja) * 1999-05-26 2000-12-05 Matsushita Electric Ind Co Ltd Ｃｍｐ加工装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08148453A (ja) * 1994-11-24 1996-06-07 Sumitomo Metal Ind Ltd ウエハ保持具
US5931722A (en) * 1996-02-15 1999-08-03 Tadahiro Ohmi Chemical mechanical polishing apparatus
US5885142A (en) * 1996-06-28 1999-03-23 Nec Corporation Device for cleaning a liquid crystal panel
JPH11262854A (ja) * 1997-12-15 1999-09-28 Canon Inc 精密研磨装置および該精密研磨装置を用いた精密研磨方法
JP2000334655A (ja) * 1999-05-26 2000-12-05 Matsushita Electric Ind Co Ltd Ｃｍｐ加工装置

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