EP1349704B1 - Platine de polissage a membrane pressurisee - Google Patents

Platine de polissage a membrane pressurisee Download PDF

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Publication number
EP1349704B1
EP1349704B1 EP01992420A EP01992420A EP1349704B1 EP 1349704 B1 EP1349704 B1 EP 1349704B1 EP 01992420 A EP01992420 A EP 01992420A EP 01992420 A EP01992420 A EP 01992420A EP 1349704 B1 EP1349704 B1 EP 1349704B1
Authority
EP
European Patent Office
Prior art keywords
platen
annular
membrane
wafer
bladders
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP01992420A
Other languages
German (de)
English (en)
Other versions
EP1349704A1 (fr
Inventor
Rod Kistler
John Boyd
Alek Owczarz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/747,745 external-priority patent/US6321947B2/en
Application filed by Lam Research Corp filed Critical Lam Research Corp
Priority claimed from PCT/US2001/050625 external-priority patent/WO2002049805A1/fr
Publication of EP1349704A1 publication Critical patent/EP1349704A1/fr
Application granted granted Critical
Publication of EP1349704B1 publication Critical patent/EP1349704B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B24B21/04—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D9/00—Wheels or drums supporting in exchangeable arrangement a layer of flexible abrasive material, e.g. sandpaper
    • B24D9/08—Circular back-plates for carrying flexible material

Definitions

  • This invention relates to a system as per the preamble of claim 1.
  • An example of such a system is disclosed by EP 920 956 A
  • CMP Chemical Mechanical Polishing
  • integrated circuit devices are in the form of multi-level structures. At the substrate level, transistor devices having diffusion regions are formed. In subsequent levels, interconnect metallization lines are patterned and electrically connected to the transistor devices to define the desired functional device. Patterned conductive layers are insulated from other conductive layers by dielectric materials, such as silicon dioxide. As more metallization levels and associated dielectric layers are formed, the need to planarize the dielectric material increases. Without planarization, fabrication of additional metallization layers becomes substantially more difficult due to the higher variations in the surface topography. In other applications, metallization line patterns are formed in the dielectric material, and then metal CMP operations are performed to remove excess metallization.
  • CMP systems typically implement belt, orbital, or brush stations in which belts, pads, or brushes are used to scrub, buff, and polish one or both sides of a wafer.
  • Slurry is used to facilitate and enhance the CMP operation. Slurry is most usually introduced onto a moving preparation surface, e.g. , belt, pad, brush, and the like, and distributed over the preparation surface as well as the surface of the semiconductor wafer being buffed, polished, or otherwise prepared by the CMP process. The distribution is generally accomplished by a combination of the movement of the preparation surface, the movement of the semiconductor wafer and the friction created between the semiconductor wafer and the preparation surface.
  • FIG 1 illustrates an exemplary prior art CMP system 10.
  • the CMP system 10 in Figure 1 is a belt-type system, so designated because the preparation surface is an endless belt 18 mounted on two drums 24 which drive the belt 18 in a rotational motion as indicated by belt rotation directional arrows 26.
  • a wafer 12 is mounted on a wafer head 14, which is rotated in direction 16. The rotating wafer 12 is then applied against the rotating belt 18 with a force F to accomplish a CMP process. Some CMP processes require significant force F to be applied.
  • a platen 22 is provided to stabilize the belt 18 and to provide a solid surface onto which to apply the wafer 12.
  • Slurry 28 composing of an aqueous solution such as NH 4 OH or DI containing dispersed abrasive particles is introduced upstream of the wafer 12.
  • the process of scrubbing, buffing and polishing of the surface of the wafer is achieved by using an endless polishing pad glued to belt 18.
  • the polishing pad is composed of porous or fibrous materials and lacks fix abrasives.
  • FIG. 2 is a detailed view of a conventional wafer head and platen configuration 30.
  • the wafer head and platen configuration 30 includes the wafer head 14 and the platen 22 positioned below the wafer head 14.
  • the wafer head 14 includes a fixed retaining ring 32 that holds the wafer 12 in position below the wafer head 14.
  • Between the wafer head 14 and the platen 22 is the polishing pad and belt 18.
  • the polishing platen 22 is closely spaced from a polishing pad or belt 18 with a very thin air space, referred to as an "air bearing", being defined between the platen 22 and the polishing pad 18.
  • the air bearing between the platen 22 and the pad 18 has been conventionally used in an attempt to create a uniform polishing of the surface.
  • air source holes generally are formed in the platen 22 and are arranged in concentric ring patterns from the center of the platen 22 to the outer edge of the platen 22. Each ring establishes an air delivery zone where air from an air source is directed through the holes during polishing, thus establishing the air bearing. Air is exhausted past the platen edge.
  • the air distribution profile of the air bearing can be varied radially as necessary to achieve optimal polishing by vary the polishing rate in each zone.
  • the distribution profiles of the zones are not completely independent of each other. This complicates establishing different distribution profiles for different zones.
  • the air bearing is very sensitive to conditions. For example, the pressure of the air bearing varies with the gap between the pad 18 and the platen 22. Thus, if the pad 18 is pushed toward the platen 22 in one area, the pressure of all areas of the air bearing are affected, thus adding unwanted complexity to the CMP process.
  • the present invention fills these needs by providing improved performance in a CMP process using a system having the features of claim 1.
  • An invention for improved performance in a CMP process using pressurized membranes and piezoelectric elements as replacements for a platen air bearing.
  • a pressurized membrane is provided, which provides zonal control during the CMP process via concentric bladders.
  • piezoelectric elements are provided atop a platen, which provide zonal control during the CMP process.
  • FIG. 3 is a diagram showing a platen configuration 300, in accordance with an embodiment of the present invention.
  • the platen configuration 300 includes a wafer head 302 having a retaining ring 304 and a wafer 306 positioned below the wafer head 302.
  • the platen configuration 300 also includes a platen 308 disposed below a polishing belt 310.
  • the platen 308 includes a pressurized membrane 312 pressurized via annular bladders 314.
  • each bladder 314 may be individually pressurized via an air source.
  • the annular bladders 314 improve performance in the CMP process by providing increased zonal control to the pressurized membrane 312.
  • the pressurized membrane 312 of the embodiments of the present invention greatly reduces the amount of air needed during the CMP process.
  • a CMP process using the pressurized membrane 312 of the present invention is not as sensitive to conditions as conventional CMP processes utilizing air bearings. Unlike air bearings, the pressure of the pressurized membrane 312 of the present invention does not experience as great a variance as experienced by air bearings when the gap between the polishing pad 310 and the platen 308 varies. Thus, if the polishing pad 310 is pushed toward the platen 308 in one area, the pressure in other areas of the pressurized membrane 312 are not as affected as other areas would be when utilizing an air bearing because the bladders are decoupled from each other.
  • FIG 4 is a detailed diagram showing a platen configuration 400, in accordance with an embodiment of the present invention.
  • the platen configuration 400 shows a polishing belt 310 positioned above a platen 308 having a pressurized membrane 312 pressurized by annular bladders 314.
  • each annular bladder 314 comprises a thin tubular material 402.
  • the tubular material 402 of each annular bladder 314 is pressurized via air.
  • the tubular material 402 can be pressurized utilizing any other means capable of pressurizing an annular bladder 314, such as a fluid, as will be apparent to those skilled in the art.
  • the pressurized membrane 312 preferably comprises a smooth, flexible material. Suitable materials include; polyurethane, silicon, thin metals (e.g., stainless steel), poly ether ether ketone (PEEK), and Teflon. As previously mentioned, the annular bladders 314 provide increased zonal control during a CMP process. To further increase zonal control, the size of the annular bladders 314 within the pressurized membrane 312 can be varied, as described in greater detail subsequently.
  • FIG. 5 is a diagram showing a platen configuration 500 having varied annular bladders, in accordance with an embodiment of the present invention.
  • the platen configuration 500 includes a platen 308 having a pressurized membrane 312 pressurized via annular bladders 314.
  • the platen configuration 500 includes annular bladders 314 having varying sizes.
  • the annular bladders 314 decrease in size as the annular bladders 314 approach the edge of the platen 308. Generally, during a CMP process, more difficulty occurs within about 10-15 mm of the wafer edge. For this reason, one embodiment of the present invention increases resolution near the wafer edge by decreasing the size of the annular bladders 314 near the edge of the platen 308. Similarly, since the center of the wafer typically requires less resolution, the central annular bladders 314 often are larger than those at the edge of the platen 308.
  • FIG 6A is a top view of an annular bladder configuration 600a in accordance with an embodiment of the present invention.
  • the annular bladder configuration 600a includes the annular bladder configuration 600a forms a complete circle about the center of the platen.
  • each annular bladder 314a can be individually pressurized to provide zonal control during the CMP process.
  • the length of each annular bladder can be reduced, as discussed next with reference to Figure 6B.
  • FIG. 6B is a top view showing an annular bladder configuration 600b in accordance with an embodiment of the present invention.
  • the annular bladder configuration 600b includes concentric annular bladders 314b. Unlike the embodiment of Figure 6A, each concentric annular bladder 314b of the annular bladder configuration 600b does not form a complete circle about the center of the platen.
  • Each concentric annular bladder 314b of the annular bladder configuration 600b varies in size depending on a particular annular bladder's 314 proximity to the edge of the platen.
  • one embodiment of the present invention increases resolution near the wafer edge by decreasing the size of the annular bladders 314b near the edge of the platen. Similarly, since the center of the wafer typically requires less resolution, the central annular bladders 314b often are larger than those at the edge of the platen.
  • embodiments of the present invention improve performance in CMP applications by providing increased zonal control via a membrane pressurized using internal annular bladders.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Claims (8)

  1. Un système pour améliorer les performances dans des applications de polissage mécano-chimique (CMP), comprenant:
    une tête porte-pastille (302) capable de porter une pastille ou disque (306),
    une courroie de polissage (310) disposée en-dessous de la tête porte-pastille;
    caractérisée par:
    une platine présentant une membrane (312) positionnée en-dessous de la ceinture de polissage (310), la platine comprenant en outre des vessies annulaires (314) disposées en-dessous de la membrane (312), les vessies annulaires étant susceptibles d'exercer une force sur la membrane (312).
  2. Un système selon la revendication 1, dans lequel la membrane (312) de la platine comprend un matériau tendre et flexible.
  3. Un système selon la revendication 1 ou la revendication 2, dans lequel les vessies annulaires (314) présentent des dimensions différentes.
  4. Un système selon la revendication 3, dans lequel les vessies annulaires (314) à proximité d'un bord de la platine sont plus petites que les vessies annulaires à proximité du centre de la platine.
  5. Un système selon l'une quelconque des revendications précédentes, dans lequel chaque vessie annulaire (314) peut être pressurisée individuellement pour exercer une force contre la membrane (312).
  6. Un système selon la revendication 5, dans lequel la force exercée contre la membrane est transférée à la courroie de polissage (310) pour assurer un contrôle zonal pendant un processus de polissage mécano-chimique (CMP).
  7. Un système selon la revendication 5 ou 6, dans lequel chaque vessie annulaire (314) est pressurisée en utilisant un gaz.
  8. Un système selon la revendication 5 ou 6, dans lequel chaque vessie annulaire (314) est pressurisée en utilisant un liquide.
EP01992420A 2000-12-21 2001-12-21 Platine de polissage a membrane pressurisee Expired - Lifetime EP1349704B1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US747745 1991-08-20
US747844 2000-12-21
US747845 2000-12-21
US09/747,844 US20020081945A1 (en) 2000-12-21 2000-12-21 Piezoelectric platen design for improving performance in CMP applications
US09/747,745 US6321947B2 (en) 2000-02-11 2000-12-22 Multiple dispensing valve closure with threaded attachment to a container and with a twist-open spout
PCT/US2001/050625 WO2002049805A1 (fr) 2000-12-21 2001-12-21 Platine de polissage a membrane pressurisee

Publications (2)

Publication Number Publication Date
EP1349704A1 EP1349704A1 (fr) 2003-10-08
EP1349704B1 true EP1349704B1 (fr) 2004-08-11

Family

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Application Number Title Priority Date Filing Date
EP01992420A Expired - Lifetime EP1349704B1 (fr) 2000-12-21 2001-12-21 Platine de polissage a membrane pressurisee

Country Status (4)

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US (1) US20020081945A1 (fr)
EP (1) EP1349704B1 (fr)
CN (1) CN1209228C (fr)
AU (1) AU2002232889A1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7824244B2 (en) * 2007-05-30 2010-11-02 Corning Incorporated Methods and apparatus for polishing a semiconductor wafer
US8522801B2 (en) * 2003-06-27 2013-09-03 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
WO2007018391A1 (fr) * 2005-08-05 2007-02-15 Seung-Hun Bae Appareil de polissage chimico-mecanique
EP2428557A1 (fr) * 2005-12-30 2012-03-14 LAM Research Corporation Solution de nettoyage
KR100900225B1 (ko) * 2006-10-31 2009-06-02 주식회사 하이닉스반도체 다마신 공정을 이용한 반도체 소자의 구리배선 형성방법
CN102884612B (zh) * 2011-01-03 2017-02-15 应用材料公司 压力控制的抛光压板
CN102632452A (zh) * 2012-04-24 2012-08-15 浙江金瑞泓科技股份有限公司 一种利用水圈进行硅片抛光方法
JP5956287B2 (ja) * 2012-08-23 2016-07-27 株式会社ディスコ 研削装置
CN102990491A (zh) * 2012-11-29 2013-03-27 江苏宜达光电科技有限公司 球面玻璃的研磨治具
JP2017037918A (ja) * 2015-08-07 2017-02-16 エスアイアイ・セミコンダクタ株式会社 研磨ヘッド、研磨ヘッドを有するｃｍｐ研磨装置およびそれを用いた半導体集積回路の製造方法
TWM573509U (zh) 2017-01-20 2019-01-21 美商應用材料股份有限公司 用於cmp 應用的薄的塑膠拋光用具及支撐元件
US11717936B2 (en) 2018-09-14 2023-08-08 Applied Materials, Inc. Methods for a web-based CMP system
KR20220116316A (ko) 2020-06-24 2022-08-22 어플라이드 머티어리얼스, 인코포레이티드 압전 압력 제어를 갖는 연마 캐리어 헤드

Also Published As

Publication number Publication date
EP1349704A1 (fr) 2003-10-08
CN1209228C (zh) 2005-07-06
AU2002232889A1 (en) 2002-07-01
CN1481295A (zh) 2004-03-10
US20020081945A1 (en) 2002-06-27

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