WO2002019781A1 - Génération de rayonnement électromagnétique par utilisation d'un plasma produit par laser - Google Patents

Génération de rayonnement électromagnétique par utilisation d'un plasma produit par laser Download PDF

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Publication number
WO2002019781A1
WO2002019781A1 PCT/GB2001/003871 GB0103871W WO0219781A1 WO 2002019781 A1 WO2002019781 A1 WO 2002019781A1 GB 0103871 W GB0103871 W GB 0103871W WO 0219781 A1 WO0219781 A1 WO 0219781A1
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WO
WIPO (PCT)
Prior art keywords
nozzle
gas
fluid
pressure chamber
low pressure
Prior art date
Application number
PCT/GB2001/003871
Other languages
English (en)
Inventor
Alan G. Taylor
David R. Klug
Ian P. Mercer
Daniel A. Allwood
Original Assignee
Powerlase Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0021458A external-priority patent/GB0021458D0/en
Priority claimed from GB0021459A external-priority patent/GB0021459D0/en
Priority claimed from GB0021455A external-priority patent/GB0021455D0/en
Application filed by Powerlase Limited filed Critical Powerlase Limited
Priority to US10/363,284 priority Critical patent/US6956885B2/en
Priority to AU2001282361A priority patent/AU2001282361A1/en
Priority to EP01960976A priority patent/EP1316245A1/fr
Priority to JP2002522474A priority patent/JP2004507873A/ja
Publication of WO2002019781A1 publication Critical patent/WO2002019781A1/fr

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H05G2/006—X-ray radiation generated from plasma being produced from a liquid or gas details of the ejection system, e.g. constructional details of the nozzle
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma

Definitions

  • This invention relates to the field of the production of electromagnetic radiation from a laser produced plasma. More particularly, this invention relates to the generation of electromagnetic radiation, such as extreme ultraviolet radiation, using a plasma produced by directing laser light onto target matter produced by expelling a gas at high pressure from a nozzle.
  • electromagnetic radiation such as extreme ultraviolet radiation
  • Lasers may have peak power outputs as high as many terawatts (10 12 W) and when this energy is tightly focused onto a solid or into a gas, the material is rapidly heated and ionised to form a plasma.
  • Materials at kilo-electron-volt temperatures are in the plasma state.
  • the plasma will typically be heated to kilo-electron-volt temperatures and the surface plasma will ablate, i.e. expand freely into the surrounding vacuum at its sound speed, exerting a very high thermal pressure of up to 10 11 Pascal. As the plasma ablates it expands and cools adiabatically.
  • the duration of the laser pulse may vary from several nanoseconds down to about 10 femtoseconds depending on the application and the method of production.
  • EUN radiation which has a wavelength of 10-15 nm, could be used to etch smaller integrated circuit features desirable for improved integrated circuit performance.
  • one method of producing EUN radiation is to direct powerful lasers on a target material of high atomic mass and high atomic number.
  • the target material In order to produce a plasma, the target material must have an electron density which exceeds a critical density.
  • Solid metal targets can be used when irradiated by high intensity pulsed lasers to produce a plasma above the target surface.
  • the high pressure exerted back onto the target by the expanding plasma results in the production of high velocity particulate ejecta which can damage the optics of the nearby laser EUN optical collection systems. Even small amounts of debris can do considerable damage, e.g. by dramatically reducing the reflectance of mirrors.
  • One way of reducing the plasma's particulate ejecta is to use a target source of atomic molecular clusters.
  • Inert noble gases such as Xenon are typically used.
  • the molecular cluster targets are produced by free-jet expansion of a gas through a nozzle. The gas is fed into the nozzle inlet at high pressure and is ejected at force through a nozzle outlet into a low pressure chamber. The gas undergoes isentropic expansion in the low pressure chamber which results in cooling. Clusters form when the gas temperature drops sufficiently so that the thermal motion of the Xenon atoms cannot overcome the weakly attractive Nan der Waals forces between the atoms.
  • the precise geometry of the nozzle determines important properties of the source jet such as the density and degree of clustering, and in turn these properties determine the intensity of the emitted EUV radiation.
  • Each gas cluster may be thought to act like a microscopic solid particle target for laser plasma generation
  • the present invention provides apparatus for generating electromagnetic radiation at or below ultraviolet wavelengths, said apparatus comprising: a low pressure chamber; a nozzle projecting into said low pressure chamber and operable to pass a continuous flow of a fluid at high pressure into said low pressure chamber, said fluid being subject to cooling through expansion to yield matter suitable for use as a laser target and gas; one or more optical elements operable to direct laser light on to said matter to generate a plasma emitting electromagnetic radiation at or below ultra-violet wavelengths; and a fluid recirculation apparatus for generating electromagnetic radiation at or below ultraviolet wavelengths, said apparatus comprising: a low pressure chamber; a nozzle projecting into said low pressure chamber and operable to pass a continuous flow of a fluid at high pressure into said low pressure chamber, said fluid being subject to cooling through expansion to yield matter suitable for use as a laser target and gas; one or more optical elements operable to direct laser light on to said matter to generate a plasma emitting electromagnetic radiation at or below ultra-violet wavelengths; and a fluid recirculation circuit
  • the fluid recirculation circuit comprises a gas pumping system comprising at least a series connected connector of at least one blower pump together with another pump operable to evacuate from said low pressure chamber.
  • the gas pumping system is further improved in embodiments in which there is provided a series connection of one or more blower pumps together with a rotary pump and/or a piston pump.
  • Each blower pump is preferably a Roots blower.
  • this may be advantageously subject to high repetition rate laser pulses to generate the plasma using pulses of between 1 and 100 kHz and more preferably between 2 and 20 kHz. This gives a quasi-continuous EUV source.
  • preferred embodiments also provide a purification unit, which may be triggered by a mass spectrometer used to momtor gas purity, that serves to batch purify the gas as required.
  • the high pressure fluid passing through the nozzle could be in a liquid or fluid state prior to expansion into the low pressure chamber.
  • preferred operation is achieved when the fluid is a gas.
  • a particularly suitable gas is Xenon gas.
  • the present invention is particularly well suited to the generation of extreme ultraviolet light.
  • the electromagnetic radiation produced by the systems of the present invention may be useful in a wide range of applications, but is particularly well suited as a radiation source for use within an integrated circuit lithography system.
  • the present invention provides a method of generating electromagnetic radiation at or below ultraviolet wavelengths, said method comprising the steps of: passing a fluid at high pressure into a low pressure chamber through a nozzle, said fluid being subject to cooling through expansion to yield matter suitable for use as a laser target and gas; focusing laser light on to said matter to generate a plasma emitting electromagnetic radiation at or below ultra-violet wavelengths; recirculating said fluid from the lower pressure chamber to the nozzle via a recirculation circuit including a purification unit; and purifying said gas in said purification unit.
  • the present invention provides apparatus for generating electromagnetic radiation at or below ultraviolet wavelengths, said apparatus comprising: a low pressure chamber; a nozzle projecting into said low pressure chamber and operable to pass a fluid at high pressure into said low pressure chamber, said fluid being subject to cooling through expansion to yield matter suitable for use as a laser target and gas; one or more optical elements operable to direct laser light on to said matter to generate a plasma emitting electromagnetic radiation at or below ultra-violet wavelengths; and a nozzle temperature controller operable to maintain said nozzle at a temperature at which said gas within said low pressure chamber condenses upon said nozzle and serves to protect said nozzle from said plasma.
  • the invention recognises that the gas expelled from the nozzle can itself be used to protect the nozzle from erosion and damage by the plasma being generated.
  • maintaining the temperature of the nozzle at a level where the background gas within the low pressure chamber condenses onto the nozzle forms a protective layer of condensed gas on the nozzle that resists the damage produced by the plasma.
  • the nozzle Whilst the range of temperatures at which the nozzle must be maintained to achieve such gas condensation can vary, in preferred embodiments the nozzle is maintained at a temperature of between 70 and 200 Kelvin.
  • the temperature controller can employ various mechanisms for cooling the nozzle, but preferred techniques found to operate effectively utilise pumped liquid nitrogen to cool the nozzle and resistive wire or lamp heaters to heat the nozzle as necessary.
  • the present invention provides apparatus for generating electromagnetic radiation at or below ultraviolet wavelengths, said apparatus comprising: a low pressure chamber; a nozzle projecting into said low pressure chamber and operable to pass a fluid at high pressure from a nozzle outlet into said low pressure chamber, said fluid being subject to cooling through expansion to yield matter suitable for use as a laser target; and one or more optical elements operable to focus laser light on to said matter to generate a plasma emitting electromagnetic radiation at or below ultra-violet wavelengths; wherein said nozzle has a bevelled outer rim portion and said one or more optical elements are disposed to focus said laser light onto said matter along a converging path which would be at least partially blocked by an outer rim flush with said nozzle outlet at an outer diameter of said nozzle that would be present if said nozzle did not have said bevelled outer rim portion.
  • the invention recognises that a significant increase in the intensity of the electromagnetic radiation generated can be achieved by focussing the laser light close to the nozzle outlet where the number density of the target matter clusters is higher.
  • the invention also recognises that in doing this the geometry of the nozzle needs to be adapted such that the converging laser light is not blocked by the outer rim of the nozzle. In this way, the intensity of the electromagnetic radiation can be increased whilst maintaining a large cone angle.
  • a further advantage that may result is that the bevelled rim of the nozzle may be less subject to damage from the plasma as it is at a generally more acute angle to the plasma.
  • Reducing nozzle erosion reduces the likelihood of debris reaching the optical elements and contaminating them.
  • the outer wall of the nozzle could have many different cross sections.
  • the outer wall of the nozzle could have a square cross section with one edge of the outer rim being bevelled to avoid interfering with the incident laser light.
  • the outer wall of the nozzle has a circular cross section as this generally eases manufacturing and provides the required strength to the nozzle whilst not providing a nozzle that is too big as a subject for plasma erosion and contamination generation.
  • the bevelled outer rim portion can have various different profiles providing they avoid interfering with the incident laser light, a preferred profile is flat in that this is convenient to manufacture, provides good strength and can yield a constant acute angle between the outer rim bevelled face and the potentially damaging plasma.
  • the bevelled rim terminates at an acute angle reducing the surface area of the nozzle end and hence the area most exposed to debris.
  • the bevelled outer rim portion is sloped at an angle greater than the angle of convergence of the laser light. This allows a considerable degree of flexibility of the way in which the nozzle may be positioned relative to the laser light without the nozzle blocking the laser light.
  • the provision of a bevel also provides robustness/structural strength and reduced occlusion of the radiation source.
  • the expansion of gas from the nozzle and the resistance to erosion of the nozzle may be further improved when the nozzle has a bevelled inner rim surrounding the nozzle outlet.
  • the nozzle outlet has a diameter of between 0.00001m and 0.002m.
  • the diameter of the outer end of the opening may preferably be increased up to 0.003m.
  • the nozzle walls preferably have a thickness of between 0.0004m and 0.002m.
  • the nozzle is mounted on a translation stage. This allows the nozzle to be accurately positioned relative to the optics to bring the focus point of the laser light accurately to a position close to the outlet of the nozzle thereby increasing the electromagnetic radiation generation intensity whilst avoiding the nozzle blocking the incident laser light.
  • the invention provides an apparatus for generating electromagnetic radiation comprising a nozzle arranged to expel target matter and a laser arranged to direct laser light onto the target matter, in which the nozzle has a bevelled end.
  • the invention provides apparatus for generating electromagnetic radiation comprising a nozzle arranged to expel target matter, a laser arranged to direct laser light onto the target matter, a detector for detecting a focal point of the laser light and a controller, in which at least one of the nozzle and laser are mounted on a translation stage and the controller is arranged to move the translation stage dependent on the detected focal point.
  • Figure 1 schematically illustrates an apparatus for generating extreme ultraviolet light
  • Figure 2 schematically illustrates the geometry of a nozzle within the apparatus of Figure 1;
  • Figure 3 schematically illustrates the condensation of Xenon gas onto the nozzle within the apparatus of Figure 1;
  • Figure 4 schematically illustrates a gas handling system for use with the apparatus of Figure 1.
  • Figure 1 shows an apparatus 2 for generating extreme ultraviolet light.
  • This apparatus 2 operates by directing a flow of high pressure Xenon gas (for example at a pressure of 10 to 70 bar) from a Xenon gas source 4 through a nozzle 6 and into the interior of a low pressure chamber 8.
  • Xenon gas for example at a pressure of 10 to 70 bar
  • a nozzle 6 As the Xenon gas emerges from the nozzle 6 it is cooled to an extent whereby matter suitable for use as a target for generating a plasma is formed.
  • This matter may be in the form of clusters of Xenon atoms.
  • a high power stream of high repetition rate laser pulses from a single or multiplexed lasers is focused onto the Xenon atom clusters.
  • the repetition rate is preferably between 1 and 100 kHz, more preferably between 2 and 20 kHz and achieved in single or multiplex configuration. This heats the Xenon atom clusters to a degree where a plasma forms, this plasma then emitting extreme ultraviolet radiation.
  • Collection optics 10 serve to gather this extreme ultraviolet radiation for use within other systems, such as an integrated circuit lithography system.
  • the optics 10 may comprise a mirror or mirrors.
  • the nozzle 6 is mounted upon a translation stage 12 which allows the nozzle to be accurately positioned close to the focus point of the laser light such that the laser light is focused where the number density of Xenon clusters is high.
  • a photodiode or other detector
  • the nozzle 6 is also cooled by a temperature controller 14 to a temperature at which the background Xenon gas within the low pressure chamber 8 condenses upon the surface of the nozzle 6.
  • the flow of gas through the nozzle 6 is continuous at a rate of up to 30 standard litres per minute.
  • a vacuum pump system connected to the low pressure chamber 8 servers to evacuate the low pressure chamber 8 to remove the Xenon gas continuously flowing into the low pressure chamber 8.
  • FIG. 2 schematically illustrates the nozzle 6 in more detail.
  • the nozzle 6 has an outer bevelled rim 16 and an inner bevelled rim 18.
  • the dotted line 20 shows where the outer rim of the nozzle 6 would lie if the outer rim were not bevelled. More particularly, the outer surface of the nozzle 6 would extend flush with the outlet of the nozzle to a point bounded by the outer radial diameter of the nozzle 6. Such an outer rim would block a significant portion of the incident laser light 22 used to generate the plasma.
  • the number density of the Xenon atom clusters close to the nozzle 6 is high and accordingly it is desirable to focus the laser light close to the nozzle outlet.
  • the geometry of the nozzle and laser light focusing optics is such that a bevelled outer rim 16 is provided to avoid the nozzle 6 obstructing the incident laser light.
  • the bevelled outer rim 16 and the bevelled inner rim 18 are at a comparatively acute angle to the plasma and accordingly may suffer less damage from the plasma ejecta.
  • the nozzle 6 with the bevelled outer rim 16 enables the focus point of the laser light to be brought close to the nozzle outlet without the nozzle obstructing the laser light, even in the laser where there are multiple lasers. That provides less nozzle erosion and hence debris which may reach, and contaminate, the collection optics 10.
  • the nozzle 6 is conveniently manufactured in a form having a circular cross section using turning techniques.
  • the outer bevelled rim 16 has a flat profile and extends around the complete circumference of the nozzle 6. Possible ranges for dimensions of different portions of the nozzle 6 are illustrated in Figure 2.
  • FIG. 3 schematically illustrates how the nozzle 6 may be subject to temperature control.
  • the temperature controller 14 uses a combination of liquid nitrogen pumped along tubes 24 close to the nozzle 6 and resistive wire or lamp heaters 26 close to the nozzle 6 to control the temperature of the nozzle 6 to be at a level at which the background Xenon gas within the low pressure chamber 8 condenses onto the outer surface of the nozzle 6.
  • This condensed Xenon gas may be liquid or may be frozen.
  • the layer 28 of condensed Xenon on the surface of the nozzle 6 provides a degree of protection to the nozzle 6 from erosion by the plasma.
  • the temperature controller 14 may control the temperature of the nozzle 6 to lie within the range of 70 to 200 Kelvin.
  • Figure 4 illustrates a gas system for use with the EUV generator 2 of Figure 1.
  • a recirculating gas system is used in which series connected blower, rotary and piston pumps serve to continuously evacuate the low pressure chamber 8.
  • the pump set includes Roots blower pumps, rotary pumps and a four stage piston/cylinder pump amongst other elements. This combination serves to provide the capacity to evacuate the low pressure chamber 8 keeping pace with the continuous flow rate of 2 to 30 standard litres per minute of Xenon into the low pressure chamber 8 through the nozzle 6.
  • a gas compressor 30 recompresses the Xenon gas evacuated from the low pressure chamber 8 up to the pressure of between 10 and 70 bar at which it is fed back to the nozzle 6.
  • This continuous recirculation of the Xenon gas is practically significant as Xenon gas is an expensive raw material and the continuous operation of the apparatus 2 would be economically compromised if the Xenon gas were not recirculated.
  • a mass spectrometer 32 or residual gas analysis (RGA) sensor serves to continuously monitor the purity of the Xenon gas flowing through the gas system and when this purity falls below a threshold level initiates purification of at least a portion of the Xenon gas using a batch purifier 34.

Abstract

La présente invention concerne générateur d'ultraviolet extrême (2) dans lequel du gaz xénon est éjecté en continu d'une buse haute pression (6) dans une chambre basse pression (8) de façon à générer des grappes d'atomes de xénon qui sont soumis à un laser pulsé à cadence de répétition élevée de façon à former un plasma et aboutir à une génération quasi-continue d'ultraviolet extrême. La buse (6) présente un bord extérieur biseauté (12) pour qu'il soit possible d'amener le foyer de la lumière laser le plus près possible de la buse (6). Cette buse (6) est refroidie jusqu'à une température à laquelle le gaz xénon d'arrière plan se condense sur la buse où il forme une couche de protection (28). Un compresseur à gaz (30) assurant la circulation du gaz xénon, il est possible d'appliquer périodiquement une purification par lots sur déclenchement par un spectromètre de masse (32) surveillant la pureté du gaz.
PCT/GB2001/003871 2000-08-31 2001-08-30 Génération de rayonnement électromagnétique par utilisation d'un plasma produit par laser WO2002019781A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US10/363,284 US6956885B2 (en) 2000-08-31 2001-08-30 Electromagnetic radiation generation using a laser produced plasma
AU2001282361A AU2001282361A1 (en) 2000-08-31 2001-08-30 Electromagnetic radiation generation using a laser produced plasma
EP01960976A EP1316245A1 (fr) 2000-08-31 2001-08-30 G n ration de rayonnement lectromagn tique par utilisation d'un plasma produit par laser
JP2002522474A JP2004507873A (ja) 2000-08-31 2001-08-30 レーザ発生されたプラズマを使用する電磁放射発生

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
GB0021458A GB0021458D0 (en) 2000-08-31 2000-08-31 Electromagnetic radiation generation using a laser produced plasma
GB0021459A GB0021459D0 (en) 2000-08-31 2000-08-31 Electromagnetic radiation generation using a laser produced plasma
GB0021458.5 2000-08-31
GB0021455.1 2000-08-31
GB0021459.3 2000-08-31
GB0021455A GB0021455D0 (en) 2000-08-31 2000-08-31 Electromagnetic radiation generation using a laser produced plasma

Publications (1)

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WO2002019781A1 true WO2002019781A1 (fr) 2002-03-07

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US (1) US6956885B2 (fr)
EP (1) EP1316245A1 (fr)
JP (1) JP2004507873A (fr)
AU (1) AU2001282361A1 (fr)
WO (1) WO2002019781A1 (fr)

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WO2013174525A1 (fr) * 2012-05-25 2013-11-28 Eth Zurich Procédé et appareil de génération d'un rayonnement électromagnétique
WO2014139713A1 (fr) * 2013-03-15 2014-09-18 Asml Holding N.V. Source de rayonnement qui éjecte un combustible liquide pour former un plasma pour génération de rayonnement et recyclage de combustible liquide

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US6956885B2 (en) 2005-10-18
EP1316245A1 (fr) 2003-06-04
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AU2001282361A1 (en) 2002-03-13
US20050100071A1 (en) 2005-05-12

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