WO2002013250A1 - Antenne radiale et dispositif à plasma l'utilisant - Google Patents
Antenne radiale et dispositif à plasma l'utilisant Download PDFInfo
- Publication number
- WO2002013250A1 WO2002013250A1 PCT/JP2001/006698 JP0106698W WO0213250A1 WO 2002013250 A1 WO2002013250 A1 WO 2002013250A1 JP 0106698 W JP0106698 W JP 0106698W WO 0213250 A1 WO0213250 A1 WO 0213250A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- radial
- conductive plate
- slot
- antenna
- conductive
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
Definitions
- the present invention relates to a radial antenna and a plasma device using the same.
- microwave plasma devices are often used to perform processes such as asshing.
- plasma devices there is a microwave plasma device that generates a high-density plasma by introducing a microwave into a processing vessel via a radial antenna tena.
- This microwave plasma device is characterized by its versatility because it can stably generate plasma even at relatively low pressure.
- FIG. 7 is a diagram showing a configuration example of a radial antenna conventionally used in such a microwave plasma device and a distribution of electric field radiation.
- Fig. 7 (a) is a conceptual diagram showing the radiation surface of the radial antenna
- Fig. 7 (b) is a cross-sectional view along the line VI lb-Vllb 'in Fig. 7 (a)
- Fig. 7 (c) is the radial antenna.
- FIG. 4 is a conceptual diagram showing distribution of a radiated electric field according to FIG.
- the horizontal axis is the distance in the radial direction from the center of the radial antenna
- the vertical axis is the intensity of the electric field radiated from the radial antenna.
- FIG. 8 is a diagram showing the shape of a slot formed on the radiation surface of the radial antenna shown in FIG.
- the radial antenna 230 conventionally used in the plasma apparatus is composed of two parallel conductive plates 231, 23, which form the radial waveguide 23. As shown in FIG. And a ring member 234 connecting the peripheral edges of these conductive plates 2 31 and 2 32. At the center of the conductive plate 232, a microwave inlet 235 through which a microwave from a microwave generator (not shown) is introduced is opened. Further, the conductive plate 2 31 has a large number of slots 2 36 for radiating the microwave propagating in the radial waveguide 23 3 to a processing vessel (not shown). Considering the effect on the electromagnetic field in the radial waveguide 23, the width W2 of the slot 23 is narrow. Ihodoyoi is, since cause too narrow when abnormal discharge is set to usually about 2 mm (and the wavelength of the microwave to lg in radial waveguide 2 3 in 3, W 2 ⁇ ⁇ / 4) .
- the microwave introduced from the microwave introduction port 235 propagates radially from the center of the radial waveguide 233 toward the periphery. At this time, the microwaves are radiated little by little from a large number of slots 236, so that the power density in the radial waveguide 233 gradually decreases as approaching the periphery.
- the field emission efficiency of the slot 2336 gradually increases as the length of the slot 2336, that is, the slot length L2, becomes longer from 0 (zero) force, and the slot length L2 becomes larger. ; maximum when the length is equivalent to lg / 2.
- the radiated electric field intensity was conventionally controlled by adjusting the slot length L2.
- the slot length L2 is increased as the distance from the center of the conductive plate 231, and the slot length L2 at the peripheral edge where the power density is small is reduced to g / 2.
- a radiated electric field distribution as shown in Fig. 7 (c) was realized.
- the present invention has been made to solve such a problem, and an object of the present invention is to obtain a desired electric field emission distribution without inducing an abnormal discharge.
- a radial antenna includes a first conductive plate having a plurality of slots formed therein, and a first conductive plate having a microwave introduction port and opposed to the first conductive plate.
- a conductive adjusting member for adjusting the distance to the first conductive plate.
- a plurality of adjusting members may be arranged radially in a plan view, or one or more adjusting members may be arranged along the periphery of the second conductive plate.
- the height of the conductive member may be set to increase as the distance from the center of the second conductive plate increases. Thereby, the power density in the radial direction in the radial waveguide can be changed.
- the slot length is desirably shorter than the length corresponding to g / 3. As a result, even if the width of the slot is narrow, the induction of abnormal discharge can be effectively prevented.
- the plasma apparatus of the present invention includes a mounting table for mounting an object to be processed, a processing container for housing the mounting table, an exhaust unit for exhausting the inside of the processing container, and a gas for supplying a gas into the processing container.
- a supply unit, and an antenna unit that is opposed to the surface of the mounting table on which the object is placed and supplies microwaves into the processing container.
- the above-described radial antenna is used as the antenna unit. It is characterized by. BRIEF DESCRIPTION OF THE FIGURES
- FIG. 1 is a configuration diagram of an etching apparatus according to a first embodiment of the present invention.
- FIG. 2 is a diagram illustrating a configuration example of a radial antenna and a distribution of electric field radiation.
- FIG. 3 is a diagram showing a shape of a slot 1 formed in the radial antenna shown in FIG.
- FIG. 4 is a plan view showing a configuration example of a conductive plate forming a radiation surface.
- FIG. 5 is a sectional view showing a modification of the ridge.
- FIG. 6 is a diagram illustrating another configuration example of the radial antenna and the distribution of the electric field radiation.
- Figure 7 shows the radial antenna conventionally used in microwave plasma devices.
- FIG. 3 is a diagram showing an example of the configuration and distribution of electric field radiation.
- FIG. 8 is a diagram showing a shape of a slot formed in the radial antenna shown in FIG. Detailed description of the embodiment
- FIG. 1 is a configuration diagram of an etching apparatus according to a first embodiment of the present invention.
- FIG. 1 shows a cross-sectional structure of a part of the configuration.
- the etching apparatus shown in FIG. 1 has a cylindrical processing container 11 having an open upper part.
- the processing container 11 is formed of a conductive member such as aluminum.
- An exhaust port (exhaust means) 14 communicating with a vacuum pump (not shown) is provided at the bottom of the processing vessel 11 so that the inside of the processing vessel 11 can be maintained at a desired degree of vacuum. .
- a plasma gas supply nozzle 15 for introducing a plasma gas such as Ar into the processing container 11 and a processing gas supply nozzle 16 for introducing an etching gas are provided on the side wall of the processing container 11.
- These nozzles (gas supply means) 15 and 16 are composed of quartz pipes and the like.
- a mounting table 22 on which an etching target substrate (object to be processed) 21 is mounted is accommodated in the processing chamber 11, and is fixed to the bottom of the processing chamber 11 via an insulating plate 24. It is fixed on the support 23 that has been set.
- the mounting table 22 is also connected to a high frequency power source 26 for bias via a matching box 25.
- a dielectric plate 13 shaped like a flat plate is horizontally disposed.
- This dielectric plate 1 3, (such as A 1 2 ⁇ 3 or A 1 N) thickness 2 0 to 3 O mm approximately quartz glass or a ceramic is used.
- the joint between the processing container 11 and the dielectric plate 13 is provided with a sealing member 12 such as an O-ring interposed therebetween, thereby ensuring airtightness inside the processing container 11.
- a radial antenna 30 is disposed above the dielectric plate 13 with a radiation surface (a conductive plate 31 described later) facing down.
- the radial antenna 30 is an antenna unit that supplies a microwave MW into the processing chamber 11 via the dielectric plate 13.
- the dielectric plate 13 is disposed to face the radiation surface of the radial antenna 30, and covers the entire radiation surface to protect the radial antenna 30 from plasma generated in the processing container 11. Further, the surroundings of the dielectric plate 13 and the radial antenna 30 are covered with a shield member 17.
- FIG. 2 is a diagram showing a configuration of the radial antenna 30 and a distribution of electric field radiation.
- FIG. 2 (a) is a plan view showing the radiation surface of the radial antenna 30,
- FIG. 2 (b) is a cross-sectional view along the line lib—lib ′ in FIG. 2 (a), and
- FIG. 2 (c) is a radial view.
- FIG. 3 is a conceptual diagram showing distribution of a radiated electric field by an antenna 30.
- FIG. 2 (a) is conceptually shown so as to clarify the features of the present invention.
- the horizontal axis represents the distance in the radial direction from the center of the radial antenna 30, and the vertical axis represents the intensity of the electric field radiated from the radial antenna 30.
- the radial antenna 30 includes a first conductive plate 31 constituting the radiation surface, and a second conductive plate 32 disposed at an upper position with respect to the conductive plate 31. And a ring member 34 that connects the peripheral edges of the conductive plates 31 and 32. The distance between the conductive plate 31 and the conductive plate 32 is maintained at d1 by the ring member 34.
- the radial antenna 30 having such a configuration has a hollow cylindrical shape, and a radial waveguide 33 for guiding the microwave MW is formed by the two conductive plates 31 and 32.
- the conductive plates 31 and 32 and the ring member 34 are formed of a conductor such as copper or aluminum.
- a microwave inlet 35 into which the microwave MW is introduced is opened.
- a large number of concentric slots 36 are formed in the conductive plate 31 constituting the radiation surface, as shown in FIG.
- FIG. 3 is a diagram illustrating an example of the shape of the slot 36.
- the shape of the slot 36 may be rectangular as shown in FIG. 3 (a) or arcuate as shown in FIG. 3 (c). Further, the four corners of the slot 36 shown in FIGS. 3A and 3C may be rounded as shown in FIGS. 3B and 3D.
- the length in the direction, ie, the slot length, is L 1
- the length, ie, the width in the shorter direction is W 1.
- the slot length L 1 of each slot 36 increases in principle as the distance from the center of the conductive plate 31 increases.
- the slot length L1 is sufficiently shorter than the length corresponding to at most lg / 2.
- the maximum slot length L1 is Lg / 3.
- the width W1 of each slot 36 is set to about 2 mm in consideration of the influence on the electromagnetic field in the radial waveguide 33 and the like.
- the pitch between the slots 36 in the radial direction is set based on L g.
- the above pitch is set to a length corresponding to g.
- the pitch is set to a length corresponding to g / 20 to g / 30.
- a coaxial line 41 is connected to the center of the radial antenna 30.
- the outer conductor 41 A of the coaxial line 41 is connected to the microwave inlet 35 of the conductor plate 32.
- the tip of the center conductor 41 B of the coaxial line 41 is formed in a conical shape, and the bottom of the cone is connected to the center of the conductor plate 31.
- the coaxial line 41 connected to the radial antenna 30 in this manner is connected to the microwave generator 45 via the rectangular-coaxial converter 42 and the rectangular waveguide 43.
- the microwave generator 45 generates, for example, a microwave MW of 2.45 GHz.
- the frequency of the microwave MW may be in the range of 1 GHz to several 10 GHz.
- a matching circuit 44 for performing impedance matching in the middle of the rectangular waveguide 43 the power use efficiency can be improved.
- a plurality of ridges 36 are fixed to the lower surface of the conductive plate 32 in the radial waveguide 33. These ridges 37 are formed of a conductor such as copper or aluminum, and are screwed from the conductive plate 36 side.
- the ridge 37 is a quadrangular prism-shaped member having a height h smaller than d1, and functions as an adjusting member for adjusting the distance to the upper surface of the conductive plate 31.
- the edge of each ridge 37 The edge 37E closest to the center of the radial waveguide 33 is chamfered as shown in FIG. 2 (b).
- each ridge 37 is radially arranged in a region A2 where the radiated electric field strength is desired to be larger than a predetermined distance from the center of the conductive plate 32. At this time, the ridge 37 is provided in a region facing the slot 36. As shown in FIGS. 4 (a) and 4 (b), when slots 36A and 36B are formed in the entire area except the center of conductive plate 31, each ridge 37 is placed in the circumferential direction. Are arranged continuously.
- the height of the radial waveguide 33 is the distance d1 from the conductive plate 32 to the conductive plate 31.
- the power density is increased in the region A2 where the height of the radial waveguide 33 is reduced by providing the ridge 37. For this reason, in the region A2 where the ridge 37 is provided, the radiated electric field intensity can be increased even if the slot length L1 is sufficiently shorter than the length corresponding to ig / 2.
- the slot length L 1 is made sufficiently shorter than the length equivalent to L g / 2, resonance can be suppressed, so that even if the width W 1 of the slot 36 is as narrow as 2 mm, the occurrence of abnormal discharge is prevented. be able to. More preferably, by setting L 1 to L g / 3, the occurrence of abnormal discharge can be effectively prevented.
- a delay member made of a dielectric material such as ceramic having a relative dielectric constant larger than 1 may be arranged in the radial waveguide 33. Use this delay member! By doing so, the field emission efficiency can be improved.
- the inside of the processing container 11 is evacuated to, for example, about 0.01 to 10 Pa.
- Ar is supplied as plasma gas from the plasma gas supply nozzle 15 and the processing gas supply nozzle Supply the etching gas such as 16 to CF 4 by controlling the flow rate.
- the microwave MW from the microwave generator 45 is supplied to the rectangular waveguide 43, the rectangular / coaxial converter 42, and the coaxial line. It supplies to the radial antenna 30 via 4 1.
- the microwave MW supplied to the radial antenna 30 propagates radially from the center to the periphery of the radial waveguide 33 formed by the conductive plates 31 and 32.
- the power of the microwave MW propagating in the radial waveguide 33 gradually decreases as approaching the periphery.
- the height of the radial waveguide 33 is changed from d1 to d2, and the height of the ridge 37 is increased. Therefore, the power density in the radial waveguide 33 does not decrease as compared with the conventional case. Therefore, even when the slot length L 1 is shorter than the length corresponding to lg / 3, the electric field strength of the microwave MW radiated from all the slots 36 is sufficiently large.
- the microwave MW radiated from the radial antenna 30 passes through the dielectric plate 13 and is introduced into the processing container 11.
- the microwave MW forms an electric field in the processing vessel 11 to ionize Ar, thereby generating a plasma in the upper space S 1 of the substrate 11 to be processed.
- the radial antenna 30 shown in FIG. 2 uses a ridge 37 having a constant height h.
- a ridge whose height continuously changes in the radial direction is used.
- 37 A may be provided on the lower surface of the conductive plate 32 so that the lower surface facing the conductive plate 31 may be inclined.
- impedance matching of the radial antenna 3 OA and out good to design the inclination of the ridge 3 7 A
- FIG. 6 is a configuration diagram of a radial antenna provided with such a ridge.
- FIG. 6 (a) is a plan view showing the radiation surface of the radial antenna
- FIG. 6 (b) is a cross-sectional view taken along line VIb-VIb 'in FIG. 6 (a).
- FIG. 6 (a) is conceptually shown so as to clarify the features of the present invention. 6, the same parts as those in FIG. 2 are denoted by the same reference numerals, and the description thereof will be omitted as appropriate.
- three ridges 137A, 137B and 137C serving as adjusting members are fixed along the periphery on the lower surface of the conductive plate 32 in the radial waveguide 133.
- These ridges 137 A to 137 C have a concentric shape along the periphery of the conductive plate 32, and are arranged in this order from the inside.
- the heights of the ridges 137A, 137B, and 137C are h1, h2, and h3, respectively, hi ⁇ h2 ⁇ h3. That is, the height of the ridges 137 A to 137 C increases as the distance from the center of the conductive plate 32 increases. Therefore, the height of the radial waveguide 133 decreases as the distance from the center of the radial waveguide 133 increases. This makes it possible to change the power density in the radial direction inside the radial waveguide 133.
- the radiated electric field strength can be increased. Even if the width W1 of the slot 36 is as narrow as 2 mm, it is possible to prevent the occurrence of abnormal discharge.
- the heights h1, h2, and h3 of the ridges 1 37A to 137C are constant, but the height changes continuously in the radial direction as in the ridge 37 shown in FIG. Oh good.
- the second embodiment for forming the radial waveguide is described.
- An adjusting member is provided for adjusting the distance from the conductive plate to the first conductive plate. Therefore, the power density can be increased by lowering the height of the radial waveguide at the peripheral portion of the radial waveguide where the power density is conventionally reduced, so that the slot length is longer than the length corresponding to Lg / 2. Even if the distance is short enough, the radiated electric field strength can be increased. Therefore, by providing the adjusting member corresponding to the region where the radiated electric field intensity is desired to be increased, a desired electric field emission distribution can be obtained without inducing an abnormal discharge.
- the plasma device using the radial antenna according to the present invention can be applied to not only the above-described etching device but also other plasma devices such as a plasma CVD device or an asshing device.
- the application of the radial antenna according to the present invention is not limited to the above-described plasma device.
- the radial antenna according to the present invention may be used for a communication antenna, and particularly may be used for a distribution combiner for distributing and combining transmission and reception signals of an array antenna.
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2001276725A AU2001276725A1 (en) | 2000-08-04 | 2001-08-03 | Radial antenna and plasma device using it |
US10/343,221 US7296533B2 (en) | 2000-08-04 | 2001-08-03 | Radial antenna and plasma device using it |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000236716A JP4598247B2 (ja) | 2000-08-04 | 2000-08-04 | ラジアルアンテナ及びそれを用いたプラズマ装置 |
JP2000-236716 | 2000-08-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002013250A1 true WO2002013250A1 (fr) | 2002-02-14 |
Family
ID=18728717
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2001/006698 WO2002013250A1 (fr) | 2000-08-04 | 2001-08-03 | Antenne radiale et dispositif à plasma l'utilisant |
Country Status (5)
Country | Link |
---|---|
US (1) | US7296533B2 (ja) |
JP (1) | JP4598247B2 (ja) |
AU (1) | AU2001276725A1 (ja) |
TW (1) | TWI281365B (ja) |
WO (1) | WO2002013250A1 (ja) |
Cited By (1)
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CN107611580A (zh) * | 2017-08-17 | 2018-01-19 | 北京遥感设备研究所 | 一种基于固体等离子体的极化可重构天线 |
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JP3914071B2 (ja) * | 2002-03-12 | 2007-05-16 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US7445690B2 (en) | 2002-10-07 | 2008-11-04 | Tokyo Electron Limited | Plasma processing apparatus |
JP4159845B2 (ja) * | 2002-10-07 | 2008-10-01 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US6998565B2 (en) | 2003-01-30 | 2006-02-14 | Rohm Co., Ltd. | Plasma processing apparatus |
JP3974553B2 (ja) * | 2003-05-07 | 2007-09-12 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ処理装置用アンテナおよびプラズマ処理方法 |
US7493869B1 (en) | 2005-12-16 | 2009-02-24 | The United States Of America As Represented By The Administration Of Nasa | Very large area/volume microwave ECR plasma and ion source |
JP4997826B2 (ja) * | 2006-05-22 | 2012-08-08 | 東京エレクトロン株式会社 | 平面アンテナ部材及びこれを用いたプラズマ処理装置 |
JP4486068B2 (ja) * | 2006-08-10 | 2010-06-23 | 東京エレクトロン株式会社 | プラズマ生成方法 |
JP2008059991A (ja) | 2006-09-01 | 2008-03-13 | Canon Inc | プラズマ処理装置及びプラズマ処理方法 |
JP5249547B2 (ja) * | 2007-09-28 | 2013-07-31 | 東京エレクトロン株式会社 | プラズマ処理装置及びそのガス排気方法 |
JP2009224455A (ja) * | 2008-03-14 | 2009-10-01 | Tokyo Electron Ltd | 平面アンテナ部材およびこれを備えたプラズマ処理装置 |
DE102008057947A1 (de) * | 2008-11-19 | 2010-05-20 | Mitec Automotive Ag | Ausgleichswelle für einen Hubkolbenmotor |
GB201021870D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
GB201021913D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | Microwave plasma reactors and substrates for synthetic diamond manufacture |
KR101481928B1 (ko) | 2010-12-23 | 2015-01-21 | 엘리멘트 식스 리미티드 | 합성 다이아몬드 물질의 도핑을 제어하는 방법 |
GB201021865D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
GB201021860D0 (en) * | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for diamond synthesis |
GB201021853D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
GB201021855D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | Microwave power delivery system for plasma reactors |
US9673533B2 (en) * | 2011-12-29 | 2017-06-06 | Selex Es S.P.A. | Slotted waveguide antenna for near-field focalization of electromagnetic radiation |
JP5728565B2 (ja) * | 2013-12-24 | 2015-06-03 | 東京エレクトロン株式会社 | プラズマ処理装置及びこれに用いる遅波板 |
NL2017575B1 (en) * | 2016-10-04 | 2018-04-13 | Draka Comteq Bv | A method and an apparatus for performing a plasma chemical vapour deposition process and a method |
KR102619949B1 (ko) * | 2016-05-16 | 2024-01-03 | 삼성전자주식회사 | 안테나, 그를 포함하는 마이크로파 플라즈마 소스, 플라즈마 처리 장치 |
JP6288624B2 (ja) * | 2016-06-20 | 2018-03-07 | 東京エレクトロン株式会社 | マイクロ波供給装置、プラズマ処理装置、及び、プラズマ処理方法 |
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US5698036A (en) * | 1995-05-26 | 1997-12-16 | Tokyo Electron Limited | Plasma processing apparatus |
JPH11167492A (ja) * | 1997-12-03 | 1999-06-22 | Hitachi Ltd | ループ飛び出し文を含むループに対する配列サマリ解析方法 |
JP2000164394A (ja) * | 1998-11-30 | 2000-06-16 | Hitachi Ltd | プラズマ処理装置 |
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JP3233575B2 (ja) * | 1995-05-26 | 2001-11-26 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JPH1167492A (ja) * | 1997-05-29 | 1999-03-09 | Sumitomo Metal Ind Ltd | プラズマ処理装置及びプラズマ処理方法 |
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2000
- 2000-08-04 JP JP2000236716A patent/JP4598247B2/ja not_active Expired - Fee Related
-
2001
- 2001-08-02 TW TW090118910A patent/TWI281365B/zh not_active IP Right Cessation
- 2001-08-03 AU AU2001276725A patent/AU2001276725A1/en not_active Abandoned
- 2001-08-03 US US10/343,221 patent/US7296533B2/en not_active Expired - Fee Related
- 2001-08-03 WO PCT/JP2001/006698 patent/WO2002013250A1/ja active Application Filing
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US5698036A (en) * | 1995-05-26 | 1997-12-16 | Tokyo Electron Limited | Plasma processing apparatus |
JPH11167492A (ja) * | 1997-12-03 | 1999-06-22 | Hitachi Ltd | ループ飛び出し文を含むループに対する配列サマリ解析方法 |
JP2000164394A (ja) * | 1998-11-30 | 2000-06-16 | Hitachi Ltd | プラズマ処理装置 |
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CN107611580A (zh) * | 2017-08-17 | 2018-01-19 | 北京遥感设备研究所 | 一种基于固体等离子体的极化可重构天线 |
Also Published As
Publication number | Publication date |
---|---|
AU2001276725A1 (en) | 2002-02-18 |
US7296533B2 (en) | 2007-11-20 |
US20040045674A1 (en) | 2004-03-11 |
JP2002050615A (ja) | 2002-02-15 |
JP4598247B2 (ja) | 2010-12-15 |
TWI281365B (en) | 2007-05-11 |
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