WO2001073153A1 - Procede de depot de films metalliques - Google Patents

Procede de depot de films metalliques Download PDF

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Publication number
WO2001073153A1
WO2001073153A1 PCT/GB2001/001407 GB0101407W WO0173153A1 WO 2001073153 A1 WO2001073153 A1 WO 2001073153A1 GB 0101407 W GB0101407 W GB 0101407W WO 0173153 A1 WO0173153 A1 WO 0173153A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
sputter
krypton
substrate
argon
Prior art date
Application number
PCT/GB2001/001407
Other languages
English (en)
Inventor
Paul Rich
Mark Graeme Martin Harris
Original Assignee
Trikon Holdings Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0007559A external-priority patent/GB0007559D0/en
Priority claimed from GB0010246A external-priority patent/GB0010246D0/en
Priority claimed from GB0030465A external-priority patent/GB0030465D0/en
Application filed by Trikon Holdings Limited filed Critical Trikon Holdings Limited
Priority to AU42622/01A priority Critical patent/AU4262201A/en
Publication of WO2001073153A1 publication Critical patent/WO2001073153A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Definitions

  • Sputtering is a well-known process whereby an inert gas is used to sputter a target material onto a substrate.
  • the target is biased with either RF or DC voltage and ions of the inert gas impact the target under the affect of the potential difference on the target, ⁇ sputtering' target material away.
  • inert gases There are a relatively few inert gases to chose amongst and argon is in almost exclusive use due to its low price and wide availability. Other noble gases have been tried for sputtering aluminium but no benefit has been observed and therefore for reason of costs and availability they have not been adopted.
  • noble metals for forming electrical contacts have been evaporated due to their high price. Evaporation processes use relatively small sources of material and recovery of wasted material from the process chamber is relatively easy using aluminium foil liners. Further, no gas is consumed in the process, unlike sputtering that requires a working gas. However sputtering is a preferred process as it produces higher quality films, and is easier to automate. It is a process which is well understood by users. Unfortunately attempts to sputter gold at low temperatures (i.e. less than 120° C) with argon have resulted in films which have unacceptable poor film characteristics e.g. their resistivity is above 3 micro-ohm cm. As a result sputtering of noble metals is relatively unusual and comparatively little researched.
  • sputter with xenon a gas that costs approximately 25,000 times more than sputter grade argon.
  • physical vapour deposition processes e.g. sputtering it is widely known that increasing the substrate temperature improves film quality and as a result almost all sputtering processes are onto substrates heated to typically over 150°C and frequently much higher. These high temperatures in general present no problem to the substrate.
  • ⁇ lift-off where a resist pattern (typically organic) is created and then the chosen material deposited onto the thus patterned substrate surface. After deposition the resist is ⁇ lifted off by e.g.
  • the invention consists in a method of depositing a noble metal on to a substrate comprising sputtering of the metal utilising a process gas characterised in that the process gas is at least predominately krypton.
  • Process conditions as follows: Process time 1 minute
  • Process conditions as follows: Process time 3 minutes Target Power lk DC Process pressure 3.5 millitorr Platen temperature -16°C
  • the gasses experimented with are all the non- radioactive noble gasses.
  • This increase in pressure can also be achieved by reducing the pumping speed. Whilst this avoids the increase in gas consumption, it offers no other benefit and is generally considered undesirable. All vacuum systems leak slightly and the substrates outgas absorbed gasses. Reducing the pumping speed increases the proportion of this gas contamination in the sputter gas thus further reducing sputtered film quality.
  • the sputtered thickness was less for xenon than for krypton, at least in part due to increased gas scattering in the higher pressure gas.
  • the target has been sputter eroded, but the sputtered material is wasted on the chamber wall shielding rather than being deposited onto the substrate.
  • a target as valuable as e.g. gold or platinum.
  • krypton was 54.5% more efficient than xenon at depositing gold onto the substrate and at least a part of this is accounted for by target material eroded but not deposited upon the wafer.
  • aluminium the most commonly sputtered material for electrical interconnect usage is lighter (at atomic number 13) than argon (at atomic number 18). Aluminium sputtered in argon has a resistivity that approximates to bulk and thus cannot be significantly improved upon by using more massive (and expensive) sputter gasses. In experiments with titanium (atomic number 22) not reported here, it was found that krypton (with an atomic number of 36) gave films of lower resistivity than when sputtered in argon, however the improvement was not as dramatic as for gold.
  • this invention is particularly advantageous where the substrate, for example a compound semiconductor wafer perhaps with an organic mask in place or any semiconductor wafer with a low thermal budget, cannot be heated to an effective temperature to reduce the sputtered film resistivity when using argon.
  • This invention can thus be seen as a way of reducing process temperature to achieve the same resistivity sputtered films.
  • An electrostatic chuck may advantageously be used to improve platen to substrate thermal transfer enabling more effective temperature control of the wafer.
  • the electrostatic chuck may be chilled to below ambient temperatures.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne des procédés de pulvérisation cathodique d'une couche métallique sur un substrat, dans lesquels du krypton est utilisé.
PCT/GB2001/001407 2000-03-29 2001-03-27 Procede de depot de films metalliques WO2001073153A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU42622/01A AU4262201A (en) 2000-03-29 2001-03-27 Method of depositing metal films

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
GB0007559A GB0007559D0 (en) 2000-03-29 2000-03-29 Method of depositing metal films
GB0007559.8 2000-03-29
GB0010246A GB0010246D0 (en) 2000-04-28 2000-04-28 Method of depositing metal films
GB0010246.7 2000-04-28
GB0030465A GB0030465D0 (en) 2000-12-14 2000-12-14 Method of depositioning metallic films
GB0030465.9 2000-12-14

Publications (1)

Publication Number Publication Date
WO2001073153A1 true WO2001073153A1 (fr) 2001-10-04

Family

ID=27255629

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2001/001407 WO2001073153A1 (fr) 2000-03-29 2001-03-27 Procede de depot de films metalliques

Country Status (2)

Country Link
AU (1) AU4262201A (fr)
WO (1) WO2001073153A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2399350A (en) * 2003-03-11 2004-09-15 Trikon Technologies Ltd Forming tungsten or tungsten containing films using krypton or xenon as sputter gas; Tungsten/tungsten nitride stacks
WO2006044166A2 (fr) 2004-10-19 2006-04-27 Guardian Industries Corp. Procede de fabrication d'un article revetu ayant une couche reflechissante ir a distance predeterminee cible-substrat
WO2006078479A1 (fr) * 2005-01-18 2006-07-27 Centre Luxembourgeois De Recherches Pour Le Verre Et La Ceramique S.A.(C.R.V.C.) Procede de fabrication d'un article recouvert d'une ou plusieurs couches reflechissant l'infrarouge au moyen de krypton gazeux
US20160349202A1 (en) * 2015-05-27 2016-12-01 Saint-Gobain Performance Plastics Corporation Conductive thin film composite
US11152325B2 (en) 2019-08-22 2021-10-19 Cree, Inc. Contact and die attach metallization for silicon carbide based devices and related methods of sputtering eutectic alloys

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4774151A (en) * 1986-05-23 1988-09-27 International Business Machines Corporation Low contact electrical resistant composition, substrates coated therewith, and process for preparing such
US5068022A (en) * 1989-11-27 1991-11-26 E. I. Du Pont De Nemours And Company Process for sputtering multilayers for magneto-optical recording
JPH04251453A (ja) * 1990-12-29 1992-09-07 Taiyo Yuden Co Ltd 光情報記録媒体の製造方法
US5403629A (en) * 1992-05-13 1995-04-04 Mtu Motoren-Und Turbinen-Union Munchen Gmbh Formation of interlayers for application of aluminum diffusion coatings

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4774151A (en) * 1986-05-23 1988-09-27 International Business Machines Corporation Low contact electrical resistant composition, substrates coated therewith, and process for preparing such
US5068022A (en) * 1989-11-27 1991-11-26 E. I. Du Pont De Nemours And Company Process for sputtering multilayers for magneto-optical recording
JPH04251453A (ja) * 1990-12-29 1992-09-07 Taiyo Yuden Co Ltd 光情報記録媒体の製造方法
US5403629A (en) * 1992-05-13 1995-04-04 Mtu Motoren-Und Turbinen-Union Munchen Gmbh Formation of interlayers for application of aluminum diffusion coatings

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Section Ch Week 199242, Derwent World Patents Index; Class A89, AN 1992-345763, XP002169824 *
LIN Y ET AL: "Atmosphere influence on in-situ ion beam analysis of thin film growth", THIN SOLID FILMS,CH,ELSEVIER-SEQUOIA S.A. LAUSANNE, vol. 253, no. 1/2, 15 December 1994 (1994-12-15), pages 247 - 253, XP004012563, ISSN: 0040-6090 *
PATTEN J W ET AL: "Krypton bubble formation and growth in sputtered gold", INTERNATIONAL CONFERENCE ON METALLURGICAL COATINGS, SAN DIEGO, CA, USA, 21-25 APRIL 1980, vol. 72, no. 2, Thin Solid Films, 1 Oct. 1980, Switzerland, pages 361 - 372, XP001002892, ISSN: 0040-6090 *

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2399350B (en) * 2003-03-11 2006-06-21 Trikon Technologies Ltd Methods of forming tungsten or tungsten containing films
GB2399350A (en) * 2003-03-11 2004-09-15 Trikon Technologies Ltd Forming tungsten or tungsten containing films using krypton or xenon as sputter gas; Tungsten/tungsten nitride stacks
EP1812617A4 (fr) * 2004-10-19 2012-08-22 Guardian Industries Procede de fabrication d'un article revetu ayant une couche reflechissante ir a distance predeterminee cible-substrat
WO2006044166A3 (fr) * 2004-10-19 2006-10-19 Guardian Industries Procede de fabrication d'un article revetu ayant une couche reflechissante ir a distance predeterminee cible-substrat
EP1812617A2 (fr) * 2004-10-19 2007-08-01 Guardian Industries Corp. Procede de fabrication d'un article revetu ayant une couche reflechissante ir a distance predeterminee cible-substrat
US7267748B2 (en) * 2004-10-19 2007-09-11 Centre Luxembourgeois De Recherches Pour Le Verre Et La Ceramique S.A. Method of making coated article having IR reflecting layer with predetermined target-substrate distance
US7291251B2 (en) * 2004-10-19 2007-11-06 Centre Luxembourgeois De Recherches Pour Le Verre Et La Ceramique S.A. (C.R.V.C.) Method of making coated article with IR reflecting layer(s) using krypton gas
WO2006044166A2 (fr) 2004-10-19 2006-04-27 Guardian Industries Corp. Procede de fabrication d'un article revetu ayant une couche reflechissante ir a distance predeterminee cible-substrat
WO2006078479A1 (fr) * 2005-01-18 2006-07-27 Centre Luxembourgeois De Recherches Pour Le Verre Et La Ceramique S.A.(C.R.V.C.) Procede de fabrication d'un article recouvert d'une ou plusieurs couches reflechissant l'infrarouge au moyen de krypton gazeux
JP2018518690A (ja) * 2015-05-27 2018-07-12 サン−ゴバン パフォーマンス プラスティックス コーポレイション 導電薄膜コンポジット
CN107667185A (zh) * 2015-05-27 2018-02-06 美国圣戈班性能塑料公司 导电薄膜复合材料
US20160349202A1 (en) * 2015-05-27 2016-12-01 Saint-Gobain Performance Plastics Corporation Conductive thin film composite
EP3303984A4 (fr) * 2015-05-27 2019-02-13 Saint-Gobain Performance Plastics Corporation Composite en couche mince conducteur
JP2020012838A (ja) * 2015-05-27 2020-01-23 サン−ゴバン パフォーマンス プラスティックス コーポレイション 導電薄膜コンポジット
KR20200120744A (ko) * 2015-05-27 2020-10-21 생-고뱅 퍼포먼스 플라스틱스 코포레이션 바이오센서 전극 및 이의 형성 방법
US11047037B2 (en) 2015-05-27 2021-06-29 Saint-Gobain Performance Plastics Corporation Conductive thin film composite
KR102325458B1 (ko) 2015-05-27 2021-11-16 생-고뱅 퍼포먼스 플라스틱스 코포레이션 바이오센서 전극 및 이의 형성 방법
CN114990488A (zh) * 2015-05-27 2022-09-02 美国圣戈班性能塑料公司 导电薄膜复合材料
US11152325B2 (en) 2019-08-22 2021-10-19 Cree, Inc. Contact and die attach metallization for silicon carbide based devices and related methods of sputtering eutectic alloys

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Publication number Publication date
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