WO2001060764A1 - PROCEDE DE FABRICATION D'ELEMENT Si-SiC POUR TRAITEMENT THERMIQUE DE SEMI-CONDUCTEURS - Google Patents
PROCEDE DE FABRICATION D'ELEMENT Si-SiC POUR TRAITEMENT THERMIQUE DE SEMI-CONDUCTEURS Download PDFInfo
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- WO2001060764A1 WO2001060764A1 PCT/JP2000/000840 JP0000840W WO0160764A1 WO 2001060764 A1 WO2001060764 A1 WO 2001060764A1 JP 0000840 W JP0000840 W JP 0000840W WO 0160764 A1 WO0160764 A1 WO 0160764A1
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
- C04B35/573—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by reaction sintering or recrystallisation
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5093—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with elements other than metals or carbon
- C04B41/5096—Silicon
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
Definitions
- the present invention relates to, for example, a method for manufacturing a member made of Si—SiC for semiconductor heat treatment such as a silicon single crystal wafer, and more particularly to a method for manufacturing a member for semiconductor heat treatment that minimizes semiconductor contamination.
- Si-SiC-based materials composed of silicon (Si) and silicon carbide (SiC) have excellent sealing properties, high purity, and strength, and are therefore used for semiconductor heat-treating materials such as semiconductor heat-treating materials.
- Peni Used for havot (hereinafter referred to as “18-boat”).
- the Fe content is 0.2 ppm or more, Ni, Cu, Na, and C as the metal impurity content. Since the total content of a, Cr and K was 0.2 ppm or more, it was not possible to meet the above-mentioned requirement for high purity.
- the semiconductor substrate is removed from the substrate. Impurity diffusion to the unavoidable
- the CVD-SiC film has (1) excellent heat resistance and corrosion resistance, (2) extremely low content of metal impurities, and (3) impurities such as metal inside the substrate to the semiconductor layer. Focusing on its excellent properties, such as being able to suppress diffusion, and (4) being dense, having no internal bubbles, and having high hardness and excellent polishing properties, CVD-S i C film 21 is formed on the surface 24 of the substrate 23 of the boat 22 to prevent diffusion of metal impurities contained in the substrate 23 to prevent contamination of the semiconductor 1. Has been taken.
- the concentration of metal impurities contained in the Si—SiC base material 23 used in the conventional ⁇ ⁇ boat 22 is 0.2 ppm or more in Fe force as described above, and Since the content is as high as 0.2 ppm or more, and the substrate 22 contains a large amount of impurities, the impurities are removed when the CVD-SiC film is formed on the surface of the substrate. As a result, when the semiconductor wafer W 1 is placed on this wafer and subjected to a heat treatment, the semiconductor wafer W 1 was contaminated.
- this impurity is higher than that of the base material 22 with the bulk concentration of the normal S i C film being about 0.04 ppm in Fe, but the impurity existing in the S 1 -S i C base material It is presumed that segregated at the tip during CVD crystal growth and moved in the growth direction.
- Japanese Patent Application Laid-Open No. Hei 6-206718 discloses that, in place of forming a 31-31 (: ⁇ 0_81 ⁇ film on a substrate, An ultra-high-purity integrated free-standing CVD-SiC formed tool for high-temperature semiconductor processing is disclosed that uses no metal impurities and has a total content of metal impurities of about 5 ppm by weight or less.
- the high-temperature semiconductor processing tool has no base material, there is a problem that the mechanical strength is low and the shape of the manufactured tool is limited.
- a CVD-SiC film is formed by generating a reaction nucleus in the film forming process and then generating a crystal based on the nucleus
- the size and number of the CVD-SiC film depend on the synthesis conditions.
- projections may occur on the surface of the CVD-SiC film.
- An object of the present invention is to provide a method for producing a Si-SiC member for semiconductor heat treatment which is particularly suitable for large-diameter semiconductor wafer heat treatment and which does not contaminate semiconductor wafers. It is another object of the present invention to provide a method for producing a Si-SiC member for semiconductor heat treatment which is free from contamination of a semiconductor wafer and does not generate a slip. .
- the production method of the present invention includes a first step of kneading a SiC powder having a total metal impurity amount of 0.2 ppm or less and a molding aid, a second step of forming a molded body from the kneaded raw material, The third step of calcining the molded body and the fourth step of purifying the calcined body are referred to as a fifth step of impregnating the purified body with silicon in a closed vessel provided in a heating furnace body.
- the method further comprises a sixth step of further processing the surface roughness Ra (JISB0601-19802) of a portion in contact with the semiconductor to be heat-treated to 0.2 m or less.
- Ra surface roughness
- the closed container is made of a porous carbon material having a porosity of 7 to 20%.
- a mechanism for flowing the inert gas into and out of the heating furnace body is provided.
- the purification step is performed by heat treatment at a temperature of 190 to 2000 ° C. in a halogen-containing atmosphere.
- the above processing steps are performed using a diamond blade.
- a CVD-SiC film forming step is performed.
- cleaning with acetic acid is performed.
- High temperature oxidation after the above-mentioned wet acid cleaning process After performing a heat treatment in a neutral atmosphere to form a silicon oxide film on the surface, the silicon oxide film is removed by washing with wet acid.
- the present invention will be described from another viewpoint.
- the purity of the SiC powder is such that the total amount of metal impurities is 0.2 ppm or less. If the total amount of metal impurities exceeds 0.2 ppm at the raw material stage, even if the purification process or each treatment process in a pollution prevention environment is carried out in the process after kneading, especially the It is difficult to achieve ultra-high purity inside the SiC members.
- At least the closed system container is preferably a container that does not have a hole that penetrates in the thickness direction of the equipment constituting the container.
- a member having a foot structure for entering and exiting the purified SiC member is preferable.
- the reason for using the porous carbon material is as follows. If the purified SiC member and the silicon for impregnation are placed in a closed container and heated and impregnated at 1450 ° C or higher, the pure atmosphere will be slightly reduced due to the high-temperature atmosphere. However, the remaining impurities evaporate. It is preferable that the vapor be porous so that this vapor does not stay in the closed vessel.
- a carbon material is preferred as a material having a uniform pore distribution throughout the entire vessel, evaporating the above-mentioned portions throughout the container, and providing a high purity and low particle generation.
- the porosity is preferably 7 to 20%. If it is less than 7%, the above-mentioned evaporation cannot be performed effectively, and S i -S i C members This makes it difficult to reduce the purity of the product. In industrial production, if the impregnation step is performed a plurality of times using the same closed container, impurities remaining on the container accumulate later in the subsequent step. Are more likely to be contaminated. If the porosity exceeds 20%, it becomes difficult to effectively shield impurities generated from the constituent materials of the heating furnace body. More preferred porosity is between 10 and 15%.
- the present invention relates to an improvement of a Si-SiC member for semiconductor heat treatment using Si-SiC as a base material, wherein Si-C is impregnated with Si.
- the form of the member is as follows o
- the content of Fe is 0.05 ppm or less, and the sum of Ni, Cu, Na, Ca, Cr, and K Si-SiC parts for semiconductor heat treatment whose content is less than 0.1 ppm and at least the surface roughness (R a) of the part where the semiconductor comes into contact is less than 0.20 m Material.
- a CVD—SiC film is formed on the surface of the Si—SiC substrate, and the CVD—SiC film is formed on the surface of the Si—SiC substrate. It is a Si-SiC member for semiconductor heat treatment in which the content of Fe and Na in a region at least 1 ⁇ from the surface of the C film is 300 ppb or less.
- a more preferable manufacturing method for obtaining the Si-SiC member for semiconductor heat treatment is as follows.
- the impregnating step of impregnating the body with Si and the surface roughness (R a) of the part of the silicon impregnated member contacting the semiconductor wafer mounted on the silicon impregnated member are referred to as ⁇ 20.
- the processing step is processing using a diamond blade.
- the calcined member is housed in a closed vessel provided in the heating furnace main body, and the calcined member is impregnated with Si.
- the CVD-SiC film formed in the above-described CVD-SiC film forming step is used to reduce the Fe and Na content of at least a region of 10 ⁇ m from the surface of this film. Is less than 30 O ppb It is preferable to set it below.
- FIG. 1 is a perspective view of a Si-SiC wafer carrier for semiconductor heat treatment according to the present invention.
- FIG. 2 is a cross-sectional view of a main part of the Si-SiC wafer for semiconductor heat treatment of FIG.
- FIG. 3 is a flow chart of a manufacturing process of a Si-SiC silicon wafer for semiconductor heat treatment according to the present invention.
- FIG. 4 is a cross-sectional view of an induction heating furnace used in an impregnation step in a manufacturing process of a Si-SiC silicon wafer for semiconductor heat treatment according to the present invention.
- FIG. 5 is a sectional view of a single-wafer susceptor as a modification of the Si-SiC member for semiconductor heat treatment according to the present invention.
- FIG. 6 is a cross-sectional view of a main part of a mini-boat of another embodiment of the Si-SiC member for semiconductor heat treatment according to the present invention.
- FIG. 7 is an enlarged view of part A of the main part of the boatboard shown in FIG.
- FIG. 8 is an explanatory view of the concentration distribution in the film of Fe according to the embodiment of the present invention.
- FIG. 9 is an explanatory diagram of the Na concentration distribution in the film according to the example of the present invention.
- FIG. 10 is a cross-sectional view of a main part of a conventional wafer boat.
- FIG. 11 is a cross-sectional view showing an example of a closed container used in the method of the present invention.
- FIG. 12 shows an example of a heating furnace used in the method of the present invention. Sectional view.
- an ultra-high-purity Si-SiC impregnated with Si is used as a base material of a semiconductor heat treatment member such as a wafer or a single wafer type susceptor. It is a member for semiconductor heat treatment in which the part of the member in contact with the semiconductor is extremely flat.
- an ultra-high-purity Si-SiC impregnated with Si into SiC is used as the base material of the semiconductor heat treatment member, and the part of the member in contact with the semiconductor is extremely flat.
- this is a semiconductor heat treatment member in which a CVD-SiC film is formed on the surface of the base material including the flat portion.
- a Si-SiC-made ⁇ ⁇ -board for example, a vertical-type ⁇ -board 1 is composed of a bottom plate 2, a support 3 and a ceiling formed from a Si-SiC substrate. Composed of plate 4 and 0
- the columns 3 have, for example, a square cross section, and four are erected on the bottom plate 2, and each column 3 has a semiconductor wafer W mounted thereon.
- a support 6 is formed.
- the support portion 6 has the support groove 5 formed in a comb-like shape in the longitudinal direction.
- the Si-SiC-made base material consisting of the bottom plate, the support and the top plate has Fe content of 0.05 ppm or less as the metal impurity content, while Ni and C It is ultra-high-purity with a total content of u, Na, Ca, Cr and K of 0.1 ppm or less.
- the surface of the wafer boat 1 where the semiconductor wafer W to be mounted comes into contact for example, the surface roughness (R a) of the upper surface 7 of the support portion 6 is extremely flat at 0.20 / m or less. Formed into o
- the reason why the content of Fe in the above base material is set to 0.05 ppm or less and the total content of the representative metals to 0.1 ppm or less is that the semiconductor substrate using the substrate 1 is used. This is because, during the heat treatment of W, even if the CVD-SiC film is not formed on the base material, the semiconductor W is not contaminated with metal.
- the Si-SiC manufacturing hub 1 having the above-described structure is manufactured by a process flow as shown in FIG.
- the total amount of metal impurities is 0.2 ppm or less, and ultra-high purity, for example, Fe is 0.05 ppm or less, and Ni, Cu, Na, Ca, Cr, K
- a sintering aid and a molding aid such as a phenolic resin and an acrylic resin are mixed with the SiC powder.
- the green bodies 2p, 3 ⁇ , 4 ⁇ are heat-treated under ordinary conditions, for example, in an Ar gas atmosphere at 150 to 200 ° C for about 2 hours. Obtain the fields 2 t, 3 t, 4 t.
- the 18-both purified product 1t assembled by bonding these purified products 2t, 3t, and 4t is then transferred to the silicon impregnation process.
- this silicon impregnation step is performed in a closed carbon container 9 made of porous carbon having a porosity of 7 to 20%, which is provided in the induction heating furnace body 8 and is kept clean.
- a closed carbon container 9 made of porous carbon having a porosity of 7 to 20%, which is provided in the induction heating furnace body 8 and is kept clean.
- Store the pottery It. 1 t of purified pure Habott stored in the closed system container 9 is heated above the molten silicon tank 10 containing the molten silicon S that has been heated and melted.
- the molten silicone S is impregnated into the 1-H hubboat molded product 1 t while urging and moving the induction heating coil 12 by using the method.
- the purified product 1 t using the closed system container 9 provided in the induction heating furnace main body 8
- the single hub 1 impregnated with Si is contaminated with metal. And not.
- a diamond blade is used for cutting to form a support groove 5 for supporting the wafer on the support 2 of the wafer boat 1.
- the cut support The upper surface 7 of the part 6 can have a surface roughness R a ⁇ 0.20 ⁇ m, and the surface roughness is not coarser than that of the CVD-SiC film surface.
- ultra-high-purity base material was used for the substrate 1, and the surface to be contacted by the semiconductor wafer W was extremely flat with a surface roughness of 0.20 ⁇ m or less. Even if a CVD-SiC film is not formed on the material surface, the semiconductor wafer W will not be contaminated and no slip will occur. Further, since no CVD-SiC film is formed, strict cleaning for removing metal impurities segregated on the surface of the SiC film is not required.
- the single-wafer susceptor 21 is suitable for large-diameter wafers such as semiconductors with a diameter of 300 mm, such as semiconductors, and has a disk-shaped susceptor body 22 and a susceptor body 22.
- the semiconductor wafer W is formed with the storage recesses 2 3 for storing the semiconductor wafer W.
- the base material forming the susceptor body 21 has a Fe content of 0.05 ppm or less, Ni, Cu, Na, Ca, Cr, and K as a metal impurity content. Is less than 0.1 ppm and the surface roughness (R a) of the surface 24 of the storage recess 23 is 0.20 ⁇ m or less, for example, at the site where the semiconductor wafer W contacts. " It has become.
- the single-wafer susceptor 21 can also be manufactured by the same manufacturing method as that of the above-mentioned typical example.
- Numeral 1 has the same shape as the vehicle board of the first embodiment shown in FIG. 1, and is formed from a Si—SiC base material.
- the wafer boat 31 assembles a bottom plate (not shown) formed from a Si—SiC base material, a column 32 and a top plate (not shown). It is composed.
- the Si-SiC wafer base material comprising the bottom plate, the support 32 and the top plate has a Fe content of 0.05 ppm or less as a metal impurity content, while N It is ultra-high purity with a total content of i, Cu, Na, Ca, Cr, and K of 0.1 ppm or less.
- the bottom plate, the support 32 and the surface 33 of the base material forming the top plate are provided with a CVD film 34 having a predetermined thickness, for example, 30 to 100 ⁇ m. In the region where the depth t is at least 10 ⁇ m from the surface 35 of the CVD film 34, the Fe and Na contents are kept at 300 ppb or less. ing.
- the content of Fe in the above base material is set to 0.05 ppm or less, and the total content of other typical metals is set to 0.1 ppm or less.
- the content of Fe exceeds 0.05 ppm and the total content of the representative metals exceeds 0.1 ppm, even if a CVD-SiC film is Metal impurities are segregated on the surface, and the semiconductor wafer W is contaminated with metal during heat treatment of the semiconductor wafer W.
- the surface roughness (R a) of the portion of the semiconductor wafer 1 contacting with the semiconductor wafer W is set at 0.20 / zm or less because of the CVD-SiC film. This is because the surface roughness greatly affects the surface roughness of the substrate.o
- the semiconductor wafer W comes into contact. Diffusion of metal impurities into the site can be reduced, and the semiconductor ⁇ W will not be contaminated during heat treatment of the semiconductor ⁇ W.
- the wafer hub 31 manufactured and grooved in the same manner as the wafer hub of the first embodiment has a thickness of, for example, 30 ⁇ to 100 ⁇ m by an ordinary CVD method.
- CVD film 34 is formed o
- the container 31 on which the CVD film 34 is formed is washed and completed.
- the semiconductor wafer W is made extremely flat at the site where it comes into contact, and a CVD-SiC film is formed on the surface of the substrate.
- a CVD-SiC film is formed on the surface of the substrate.
- the use of an ultra-high-purity substrate eliminates segregation of metal impurities on the surface of the SiC film and ensures rigorous cleaning. Was unnecessary.
- a single wafer type susceptor formed with a CVD film can be considered.
- Sample preparation Example 1 An ultra-high purity SiC powder (total metal impurity content of 0.2 ppm or less) having an average particle size and a metal impurity content as shown in Table 1 was added to an acrylic-based powder as a molding aid. A kneader was added and kneaded, and a test piece molded body having a cross section of 2 cm ⁇ 2 cm in length and a length of 30 cm was prepared by embedding. The molded body was fired (calcined) at 170 ° C. for about 2 hours in an argon atmosphere, and then purified in a halogen gas-containing atmosphere at 190 ° C. to obtain a test piece. Using a closed container made of high-purity carbon with a porosity of 13% provided in the main body of the induction heating furnace, the purified specimen was impregnated with molten silicon under reduced pressure. Obtained.
- Comparative Example 1 Conventional type using SiC powder (total metal impurity exceeds 0.2 ppm) with average particle size and metal impurity content as shown in Table 1, and using no closed vessel for the impregnation process A test piece impregnated body was obtained in the same manner as in the example except that the impregnation method of Example 1 was adopted.
- Example 1 and Comparative Example 1 obtained in (1) above A portion is cut out from the test pieces of Example 1 and Comparative Example 1 obtained in (1) above, and the acid-extracted solution is measured by ICP emission spectrometry.
- Example 1 Even the most contained Fe was 0.02 ppm, and all other metals were in a value of 0.001 ppm or less. It can be seen from Example 1 that the purity was extremely high in Example 1. On the other hand, in Comparative Example 1, Fe was 0.27 ppm, which was 13. The content is 5 times, and other metals are contained 3 to 6 times as much as those of the examples.
- the surface roughness of the support groove with which the semiconductor wafer contacts is measured.
- Example 2 Ultra high-purity SiC powder (total metal impurity content of 0.2 ppm or less) with average particle size and metal impurity content as shown in Table 1
- the mixture was kneaded and kneaded, and a molded bottom plate, a formed support column and a molded top plate were prepared by embedding.
- the obtained molded bodies were bonded using an adhesive (a mixed powder of silicon carbide powder and carbon powder to which a phenolic binder was added) to assemble a boat molded body. .
- the molded body is fired (calcined) at 170 ° C. for about 2 hours in an argon atmosphere, and then purified at 950 ° C. in an atmosphere containing a halogen gas to obtain a molded body.
- the purified boat was impregnated with molten silicon under reduced pressure using a closed vessel made of high-purity carbon with a porosity of 15% in the induction heating furnace body.
- the induction heating furnace body was provided with a mechanism for allowing N gas, which is an inert gas, to flow in from one furnace wall, and for allowing the N 2 gas to flow out from the other furnace wall by means of a vacuum pump.
- a support groove was formed in this wafer boat infiltrated body using a diamond blade to obtain a wafer boat for 8-inch wafers.
- Comparative Examples 2-3 Average particle size and metal impurity content are shown in Table 1.
- a wafer boat for 8-inch wafer was obtained in the same manner as in Example 2 (comparative).
- Example 2 (substrate) the conventional method of impregnating silicon on a heater induced and heated by a movable high-frequency coil was used.
- a SiC film was formed on the anode board by CVD (Comparative Example 3 (with film)).
- the purification process was performed by the conventional method, and the support grooves were formed using a conventional cutting tool.
- Example 2 and Comparative Example 3 (with a film) obtained in (1) above was cut out, and the surface on which the semiconductor wafer was supported was measured using a surface roughness measuring instrument. It was measured by.
- Example 2 The surface roughness of Example 2 was 0.12 m, which was extremely flat at 1 Z 3 compared to 0.45 of Comparative Example 3 (with film).
- the amount of metal impurities transferred to the semiconductor wafer during the heat treatment is measured.
- One 8-inch silicon wafer was mounted on each of the sample auto-boats (Example 2, Comparative Example 2 (base material), and Comparative Example 3 (with film)), and the N 9 ZO 2 atmosphere In the middle, heat treatment is performed at 110 ° C, and metal impurities transferred to the silicon wafer surface are measured.
- Example 2 the amount of transferred metal was smaller than that of Comparative Example 3 (with film) for metals other than Ni and Ca. In addition, the amount of transfer was smaller for all metals than in Comparative Example 2 (base material) without the CVD film, and was about 1Z5-1Z2.
- Example 2 and Comparative Example 3 (with a membrane) obtained in [2] (1) above, 8 in-silicon capacitors were placed at three positions at the upper, middle, and lower positions, respectively. Each of the three sheets is mounted, and the temperature is raised at a predetermined rate to 1200 ° C. After maintaining this temperature for one hour, the silicon wafer is taken out and the slip is taken out using a differential interference microscope. The occurrence was observed.
- Example 4 Two boat molded bodies were prepared in the same manner as in [2] (1) above, and one was impregnated with Si by the conventional Si impregnation method without using a closed container as in the present invention (comparative). Example 4), and the other one is impregnated with Si by the Si impregnation method according to the present invention (equivalent to the above [2] (1)) (Example 3).
- Example 5 It was prepared in the same manner as in Example 3 except that the Si impregnation was performed in a high-purity glassy carbon container having a porosity of 0.5%.
- the metal impurity content of the substrate impregnated with Si was significantly lower than the metal impurity content of the substrate impregnated using Comparative Example 4.
- high-purity glass with a porosity of 0.5% is used as a closed container.
- the metal impurity content of the e-habot substrate on which the CVD film is formed is measured.
- Example 6 An 8-inch wafer having a metal impurity content as shown in Table 7 was prepared in the same manner as in Example 2 in [2] (1) above. did. Next, this substrate was placed at 110 ° C. in an atmosphere mainly composed of a silane-based gas, and a SiC film was formed by a CVD method (Example 6). At the time of manufacturing the wafer, a small sample of the same ultra-high-purity substrate as the wafer was placed to form a CVD film.
- Comparative Example 5 An 8-inch wafer for heat treatment as shown in Table 7 was prepared in the same manner as in Comparative Example 4 described above. Next, a CVD-SiC film was formed on the substrate by the same method as in Example 6 (Comparative Example 5). At the time of preparing the hub boat, as in Example 6, a small sample of the same ultrahigh-purity substrate as that of the hub was placed, and a CVD film was formed.
- the first after washing is et to 0 2 1 0 0 performs ° c sense in sanshool in the first 2 wet cleaning to remove surface impurities trap the oxide film in HF + H 2 0 Then, heat treatment and wafer evaluation were performed.
- Example 6 Even with simple cleaning, it was found that in Example 6, the amount of metal impurities transferred to the surface of each elemental co-chamber was small, and that the amount of transfer was significantly smaller than that of Comparative Example 5. In particular, the difference between the transcript amounts of Fe and Na is large in both cases.
- Example 6 showed that the amount of metal impurities transferred to the surface of each element substrate was extremely small, and that the amount of transfer was significantly smaller than that of Comparative Example 5.
- Example 5 showed that the difference in the amount of transcription of F e and Na is large in both cases.
- Figures 8 and 9 show the in-film concentration distributions of F e and N a, for which a remarkable difference was observed between the two samples.
- Example 6 it was found that in the film thickness range of 1 to 5 / m, both the Fe concentration and the Na concentration in the film were significantly lower than those of the comparative example.
- Fig. 11 shows an example of a closed system container.
- the closed system container 51 does not have a hole penetrating in the thickness direction of the base material constituting the closed system container 51.
- the side of the closed system container 51 is open and can be closed by the lid 52.
- 5 3 indicates a fitting portion of the lid 52.
- Fig. 12 shows an example of the internal configuration of the heating furnace.
- a closed vessel 51 is placed inside the furnace body 61.
- the inert gas flows well.
- the steam coming out through the pores of the closed system container 51 is efficiently discharged.
- a Si-SiC member for heat treatment of a semiconductor According to the method for producing a Si-SiC member for heat treatment of a semiconductor according to the present invention, a Si-SiC member for minimizing metal contamination to a heat-treated semiconductor (a wafer). Can be provided.
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2000/000840 WO2001060764A1 (fr) | 2000-02-15 | 2000-02-15 | PROCEDE DE FABRICATION D'ELEMENT Si-SiC POUR TRAITEMENT THERMIQUE DE SEMI-CONDUCTEURS |
EP00902988A EP1184355B1 (en) | 2000-02-15 | 2000-02-15 | METHOD FOR MANUFACTURING Si-SiC MEMBER FOR SEMICONDUCTOR HEAT TREATMENT |
DE60032358T DE60032358T2 (de) | 2000-02-15 | 2000-02-15 | Verfahren zur herstellung von si-sic-gliedern zur thermischen behandlung von halbleitern |
US09/958,911 US6699401B1 (en) | 2000-02-15 | 2000-02-15 | Method for manufacturing Si-SiC member for semiconductor heat treatment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2000/000840 WO2001060764A1 (fr) | 2000-02-15 | 2000-02-15 | PROCEDE DE FABRICATION D'ELEMENT Si-SiC POUR TRAITEMENT THERMIQUE DE SEMI-CONDUCTEURS |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001060764A1 true WO2001060764A1 (fr) | 2001-08-23 |
Family
ID=11735687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2000/000840 WO2001060764A1 (fr) | 2000-02-15 | 2000-02-15 | PROCEDE DE FABRICATION D'ELEMENT Si-SiC POUR TRAITEMENT THERMIQUE DE SEMI-CONDUCTEURS |
Country Status (4)
Country | Link |
---|---|
US (1) | US6699401B1 (ja) |
EP (1) | EP1184355B1 (ja) |
DE (1) | DE60032358T2 (ja) |
WO (1) | WO2001060764A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002270614A (ja) * | 2001-03-12 | 2002-09-20 | Canon Inc | Soi基体、その熱処理方法、それを有する半導体装置およびその製造方法 |
JP4136380B2 (ja) * | 2001-12-21 | 2008-08-20 | 日本碍子株式会社 | 高熱伝導性含Si材料及びその製造方法 |
US20040188319A1 (en) * | 2003-03-28 | 2004-09-30 | Saint-Gobain Ceramics & Plastics, Inc. | Wafer carrier having improved processing characteristics |
US6825123B2 (en) * | 2003-04-15 | 2004-11-30 | Saint-Goban Ceramics & Plastics, Inc. | Method for treating semiconductor processing components and components formed thereby |
US7501370B2 (en) * | 2004-01-06 | 2009-03-10 | Saint-Gobain Ceramics & Plastics, Inc. | High purity silicon carbide wafer boats |
US7888685B2 (en) * | 2004-07-27 | 2011-02-15 | Memc Electronic Materials, Inc. | High purity silicon carbide structures |
US8017062B2 (en) * | 2004-08-24 | 2011-09-13 | Yeshwanth Narendar | Semiconductor processing components and semiconductor processing utilizing same |
EP1855312B1 (en) * | 2005-02-22 | 2014-04-09 | Hitachi Metals, Ltd. | PROCESS FOR PRODUCING SiC SINGLE-CRYSTAL SUBSTRATE |
US8633483B2 (en) * | 2007-06-26 | 2014-01-21 | Massachusetts Institute Of Technology | Recrystallization of semiconductor wafers in a thin film capsule and related processes |
TWI421965B (zh) * | 2007-12-20 | 2014-01-01 | Saint Gobain Ceramics | 處理半導體製程元件之方法及其形成之元件 |
US8261730B2 (en) * | 2008-11-25 | 2012-09-11 | Cambridge Energy Resources Inc | In-situ wafer processing system and method |
KR101854731B1 (ko) * | 2011-07-28 | 2018-05-04 | 엘지이노텍 주식회사 | 잉곳 제조 방법 |
KR101429139B1 (ko) * | 2013-05-06 | 2014-08-13 | 한국내화 주식회사 | 고로 스테이브용 규소-탄화규소 충진재 |
CN112786500A (zh) * | 2019-11-11 | 2021-05-11 | 夏泰鑫半导体(青岛)有限公司 | 晶圆架及具有晶圆架的垂直晶舟 |
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DE3701691A1 (de) * | 1986-07-31 | 1988-02-04 | Toshiba Ceramics Co | Verfahren zum herstellen einer ofenkomponente |
US5589116A (en) * | 1991-07-18 | 1996-12-31 | Sumitomo Metal Industries, Ltd. | Process for preparing a silicon carbide sintered body for use in semiconductor equipment |
EP0486938B1 (en) * | 1990-11-20 | 1999-05-19 | Asahi Glass Company Ltd. | Heat treating apparatuses for semiconductors and high purity silicon carbide parts for the apparatuses and a method of making thereof |
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DE6913124U (de) | 1968-12-24 | 1970-11-19 | Ford Werke Ag | Kupplungsstueck fuer elektrische leitungen, insbesondere in kraftfahrzeugen |
JPS6335452A (ja) | 1986-07-31 | 1988-02-16 | 東芝セラミツクス株式会社 | 半導体拡散炉用構成部材の製造方法 |
JPS6436981A (en) | 1987-07-31 | 1989-02-07 | Mazda Motor | Ignitor for engine |
JP2548949B2 (ja) * | 1987-09-01 | 1996-10-30 | 東芝セラミックス株式会社 | 半導体製造用構成部材 |
JPH0784351B2 (ja) | 1990-11-20 | 1995-09-13 | 旭硝子株式会社 | 半導体熱処理装置および半導体熱処理装置用高純度炭化珪素質部材とその製造方法 |
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CA2099788A1 (en) | 1992-07-31 | 1994-02-01 | Michael A. Pickering | Ultra pure silicon carbide and high temperature semiconductor processing equipment made therefrom |
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GB2301545B (en) * | 1995-06-02 | 1999-04-28 | Aea Technology Plc | The manufacture of composite materials |
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JP3642446B2 (ja) | 1996-08-01 | 2005-04-27 | 東芝セラミックス株式会社 | 半導体ウエハ処理具 |
JPH118216A (ja) | 1997-06-16 | 1999-01-12 | Toshiba Ceramics Co Ltd | 半導体製造用部材の洗浄方法 |
-
2000
- 2000-02-15 WO PCT/JP2000/000840 patent/WO2001060764A1/ja active IP Right Grant
- 2000-02-15 EP EP00902988A patent/EP1184355B1/en not_active Expired - Lifetime
- 2000-02-15 US US09/958,911 patent/US6699401B1/en not_active Expired - Fee Related
- 2000-02-15 DE DE60032358T patent/DE60032358T2/de not_active Expired - Fee Related
Patent Citations (4)
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JPS62122212A (ja) * | 1985-11-22 | 1987-06-03 | Toshiba Ceramics Co Ltd | 半導体熱処理用治具 |
DE3701691A1 (de) * | 1986-07-31 | 1988-02-04 | Toshiba Ceramics Co | Verfahren zum herstellen einer ofenkomponente |
EP0486938B1 (en) * | 1990-11-20 | 1999-05-19 | Asahi Glass Company Ltd. | Heat treating apparatuses for semiconductors and high purity silicon carbide parts for the apparatuses and a method of making thereof |
US5589116A (en) * | 1991-07-18 | 1996-12-31 | Sumitomo Metal Industries, Ltd. | Process for preparing a silicon carbide sintered body for use in semiconductor equipment |
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Also Published As
Publication number | Publication date |
---|---|
EP1184355A1 (en) | 2002-03-06 |
US6699401B1 (en) | 2004-03-02 |
DE60032358D1 (de) | 2007-01-25 |
EP1184355B1 (en) | 2006-12-13 |
EP1184355A4 (en) | 2006-04-05 |
DE60032358T2 (de) | 2007-10-25 |
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