WO2001030115A1 - Plaque chauffante en ceramique - Google Patents

Plaque chauffante en ceramique Download PDF

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Publication number
WO2001030115A1
WO2001030115A1 PCT/JP2000/000816 JP0000816W WO0130115A1 WO 2001030115 A1 WO2001030115 A1 WO 2001030115A1 JP 0000816 W JP0000816 W JP 0000816W WO 0130115 A1 WO0130115 A1 WO 0130115A1
Authority
WO
WIPO (PCT)
Prior art keywords
heating element
pattern
ceramic
temperature
ceramic heater
Prior art date
Application number
PCT/JP2000/000816
Other languages
English (en)
Japanese (ja)
Inventor
Yasutaka Ito
Original Assignee
Ibiden Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co., Ltd. filed Critical Ibiden Co., Ltd.
Priority to PCT/JP2000/005462 priority Critical patent/WO2001031978A1/fr
Publication of WO2001030115A1 publication Critical patent/WO2001030115A1/fr
Priority to US09/916,682 priority patent/US20020043528A1/en
Priority to US10/222,928 priority patent/US20030000937A1/en

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic

Definitions

  • the present invention relates to a ceramic heater mainly used in the semiconductor industry, and more particularly to a ceramic heater for drying provided with a heating element pattern in which a singular point at a reduced temperature does not occur. is there.
  • Scenic technologySemiconductor application products are extremely important products required in various industries.
  • a typical example of a semiconductor chip is a silicon wafer manufactured by slicing a silicon single crystal to a predetermined thickness. Thereafter, it is manufactured by forming various circuits and the like on the silicon wafer.
  • a conductive thin film and the like are formed on a silicon wafer, and then an etching resist made of a photosensitive resin or the like is applied through a mask having a circuit pattern, and pattern etching is performed.
  • an etching resist made of a photosensitive resin or the like is applied through a mask having a circuit pattern, and pattern etching is performed.
  • the photosensitive resin is a viscous liquid, it is necessary to dry it after application.
  • the silicon wafer coated with the photosensitive resin is placed on a heater and cured by heating and drying. That is usually done. In addition, it was necessary to heat the wafer during plasma etching and sputtering.
  • a semiconductor wafer such as a silicon wafer is placed on a heater and heated and dried.
  • a linear heating element formed by sintering metal particles or the like on the surface of a plate-like body made of nitride ceramic or the like is provided. Ramikhi overnight has been proposed.
  • a heating element is formed in such a ceramic heater, if the heating element is formed in a pattern having a bent portion, there is a problem that the temperature of the bent portion is reduced and the surface temperature becomes uneven. There was still room for improvement.
  • a ceramic heater according to claim 1 of the present invention is a ceramic heater in which a heating element pattern is formed on the surface or inside a disk-shaped ceramic substrate.
  • the heating element part has a bent portion which bends in a curved manner. With this configuration, there is no drop in the temperature of the bent portion of the heating element arrangement pattern (sometimes referred to as a heating element pattern).
  • the heating element pattern is represented by a top view shape, but the position in the thickness direction of the ceramic substrate on which the heating element is disposed may not be on the same plane, and may be different from the vertical position in the thickness direction. May be included.
  • the present inventors have conducted intensive studies on the causes of the problems according to the prior art, and as a result, have found the following causes.
  • FIG. 5 shows a heating element 32 used in a conventional ceramic heater.
  • a part of the heating element is bent at a right angle. And the temperature of this right-angle bend (arrow 32a) drops below the temperature of the other parts.
  • the reason for this is that the pattern widths h 1 and h 3 of the substantially straight portion and the pattern width h 2 of the right-angled bent portion are different.
  • the pattern width] 2 is larger than the pattern widths hi and h3
  • the resistance value of the pattern width h2 part is reduced. Singular points (spots) occur.
  • uniformity of the temperature distribution is required, unlike a square ceramic heater.
  • the uniformity of the temperature distribution is not originally required because the surface temperature at the four corners decreases because the heat is concentrically propagated.
  • FIG. 1 (a) is a plan view showing a main part of a ceramic heater according to an embodiment of the present invention
  • FIG. 1 (b) is an enlarged view of a part surrounded by a dotted line in (a). It is.
  • FIG. 2 is a plan view showing an example of a heating element pattern of the ceramic heater according to one embodiment of the present invention.
  • FIG. 3 is a partially enlarged view showing a part of the heating element pattern of the ceramic heater according to one embodiment of the present invention in an enlarged manner.
  • FIG. 4 is a partial cross-sectional view showing the structure of the ceramic heater according to one embodiment of the present invention.
  • FIG. 5 is a partially enlarged view showing a part of a conventional heating element pattern of a ceramic heater.
  • FIG. 6 is a plan view showing a main part of a ceramic heater used as a comparative example.
  • FIG. 1A is a plan view showing a main part of a ceramic heater 100 according to an embodiment of the present invention
  • FIG. 1B is an enlarged view of a dotted line in FIG. It is shown.
  • FIG. 2 is an enlarged view of a heating element pattern arranged in the ceramic ceramic 100
  • FIG. 3 is an enlarged view of a part of the heating element pattern.
  • FIG. 4 is a partial cross-sectional view showing the structure of the ceramic heater 100.
  • ceramic ceramic 100 uses a plate-shaped ceramic substrate 1 made of insulating nitride ceramics or carbide ceramics, and has a specific width on one main surface of the ceramic substrate 1.
  • a heating element pattern 2 having a flat cross section is formed, for example, as shown in FIG.
  • the form of the heating element pattern is formed by a linear shape or a substantially straight or curved line having a width.
  • the shape of the cross section of the heating element is not limited as long as it is flat, and may be rectangular, oval, or the like. Further, the linear heating element may have a spiral shape.
  • the aspect ratio (width of the heating element / thickness of the heating element) of the cross section of the heating element pattern 2 is preferably 10 to 500. By adjusting to this range, the resistance value of the heating element panel 2 can be increased, and the uniformity of the temperature of the heating surface can be ensured.
  • the aspect ratio of the cross section is preferably 10 to 500.
  • the thickness of the heating element panel 2 is preferably 1 to 30 ⁇ m, more preferably 1 to 10 ⁇ m.
  • the thickness thereof is preferably 1 to 50 m.
  • the width of the heating element pattern 2 is preferably 0.1 to 20 mm, more preferably 0.1 to 5 mm.
  • the width of the heating element pattern 2 is preferably 5 to 20 m.
  • the heating element pattern 2 shown in FIG. 1 is a hybrid of a spiral pattern and a bent pattern, but it is desirable to dispose the bent pattern at the outer edge. This is because the bent pattern can increase the wiring density, and thus can suppress the temperature drop near the outer peripheral edge, where the temperature tends to decrease.
  • the heating element pattern 2 may be composed of only a bending pattern as shown in FIG.
  • the heating element pattern 2 causes a decrease in the resistance value due to the difference in the pattern width, and It is configured to prevent the occurrence of singular points (spots) with reduced temperature.
  • the material of the ceramic substrate is preferably an aluminum nitride sintered body, but is not limited thereto.
  • carbide ceramics oxide ceramics, nitride ceramics other than aluminum nitride, and the like can be used. Is preferred.
  • carbide ceramics include metal carbide ceramics such as silicon carbide, zirconium carbide, titanium carbide, tantalum carbide, and tungsten carbide.
  • oxide ceramics include alumina, zirconia, And metal oxide ceramics such as gerite and mullite.
  • nitride ceramic include aluminum nitride and metal nitride ceramics such as silicon nitride, boron nitride, and titanium nitride. Of these ceramic materials, nitride ceramics and carbide ceramics are generally preferred over oxide ceramics in that they exhibit high thermal conductivity. These materials may be used alone or in combination of two or more.
  • the process conditions are merely an example, and are not limited to this embodiment. Therefore, the process conditions are set with appropriate changes depending on the size of the sample, the throughput, and the like.
  • 100 parts by weight of aluminum nitride powder (average particle size: 1.0 lm), 4 parts by weight of yttria (average particle size: 0.4 ⁇ m), 12 parts by weight of acrylic resin binder, and alcohol are mixed and kneaded.
  • granulated powder by spray dryer method It was the end.
  • the granular powder was charged into a molding die, and was molded into a flat plate to obtain a formed product.
  • a through hole for inserting a semiconductor wafer support pin and a concave portion for embedding a thermocouple were formed in the formed body by drilling.
  • the formed body in which the through-holes and recesses were formed was hot-pressed at about 1800 ° C. and a pressure of 200 kg / cm 2 to obtain a 3 mm-thick aluminum nitride plate-like sintered body. This was cut out into a disk shape having a diameter of 210 mm to obtain a ceramic substrate 1 for ceramic heater 100.
  • a conductive paste was printed on the ceramic substrate 1 by a screen printing method so that the heating element patterns 2 were arranged in the pattern shown in FIG.
  • the conductive paste used here is Solvent PS 603 D (trade name) manufactured by Tokuka Chemical Laboratories.
  • This conductive paste is made of lead oxide, zinc oxide, silica, boron oxide, and aluminum oxide.
  • This is a so-called lead-containing silver paste containing 7.5% by weight of a metal oxide consisting of a mixture of the following (weight ratio is 5/55/10/2 5/10 in this order) based on the amount of silver.
  • the average particle size of silver was 4.5 ⁇ m, and the shape was mainly scaly.
  • the ceramic substrate on which the conductive paste was printed was heated and fired at 780 ° C to sinter silver and lead in the conductive paste, and baked on the ceramic substrate.
  • the heating element pattern of the lead-containing silver sintered body had a thickness of about 5 ⁇ m, a width of 2.4 mm, and a sheet resistance of 7.7 ⁇ / port.
  • the heating element pattern has a pattern that bends while drawing a radius at an outer edge portion.
  • the radius of curvature of the radius is preferably from 0.1 mm to 20 mm. If it is too small, it becomes a right angle, This is because the heating element pattern density cannot be increased.
  • the radius of curvature is defined by the center line (L in FIG. 3) of the heating element pattern.
  • the concentration per liter was 80 g / l of nickel sulfate, 24 g / l of sodium hypophosphite, 12 g / l of sodium acetate, 8 g / l of boric acid, and 6 g / l of ammonium chloride.
  • the ceramic substrate is immersed in an electroless nickel plating bath containing each aqueous solution having a concentration of 1% to deposit a nickel metal layer having a thickness of about 1 m on the surface of the lead-containing silver sintered body.
  • the heating element patterns 2, 31 and 31a are formed on the ceramic substrate 1 in a predetermined pattern as shown in FIG.
  • the shape of the heating element pattern may be a wide, substantially straight or curved line as shown in FIG. 1 (b). Therefore, it does not need to be a strictly geometric straight line or curve.
  • a silver-containing lead solder paste (manufactured by Tanaka Kikinzoku Kogyo Co., Ltd.) is applied by screen printing to the area where the terminal pins 3 for securing the connection between the heating element pattern 2 and the power supply are attached. ), Solder layer 6 is arranged, and Kovar terminal pin 3 is placed on this solder layer, and heated and reflowed at 420 ° C, and terminal pin 3 is heated to the heating element pattern.
  • thermocouple (not shown) for temperature control was embedded in the ceramic substrate 1 to obtain a ceramic heater 100 according to the present invention.
  • reference numeral 7 denotes a support pin for supporting the semiconductor wafer 9, and indicates that the support pin 7 is inserted into a through hole 8 formed in the ceramic substrate 1.
  • the heating element pattern 2 is Since it has a resistance value, the heating element pattern 2 is energized from the position where the terminal pin 3 for energizing the heating element pattern 2 is attached, and the heating element 1 is heated by Joule heat. Is generated and the semiconductor wafer 9 is heated.
  • Example 1 Five kinds of products of the present invention were manufactured in which the curvature of the bending pattern was changed, and these were designated as Examples 1 to 5, respectively.
  • a ceramic heater with a heating element pattern having a substantially right-angled bending pattern as shown in Fig. 6 was manufactured and used as a comparative example.
  • the ceramic heater according to the present invention The difference between the temperature near the bent pattern and the temperature near the spiral pattern within 5 ° C is within 5 ° C.
  • the temperature near the right-angled bent pattern and the spiral the difference between the temperature of the pattern near, 1 0 ° c was the C
  • the ceramic heater evening according to the present invention it has been found that the temperature of the equalizing Ichika ceramic substrate can be achieved.
  • the radius of curvature is optimally about 1 to 15 mm. In Examples 1 to 4, no cracks occurred in the thermal shock test, while cracks were observed in Comparative Example.
  • the ceramic heater according to the present invention can be used as an electrostatic chuck if electrodes are embedded in the ceramic substrate. Further, the ceramic heater according to the present invention can be used as a wafer prober if a conductor layer is embedded on the surface of the ceramic substrate and an electrode is embedded inside. Since the ceramic heater according to the present invention has a bent portion which bends in a curved shape on the surface or inside of the disk-shaped ceramic substrate, the bent portion does not have a temperature-lowering portion and has a uniform temperature. It will be excellent in property. In particular, it is suitable for a disk-shaped ceramic window.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Resistance Heating (AREA)

Abstract

Cette invention se rapporte à une plaque chauffante en céramique de température uniforme, utilisant un substrat chauffant constitué par un matériau céramique de forte conductivité thermique. Une telle plaque chauffante en céramique en forme de disque (100) comprend des motifs de circuit chauffant courbes (2) de largeur approximativement égale placés sur ou dans la surface du substrat en céramique(1).
PCT/JP2000/000816 1999-10-22 2000-02-15 Plaque chauffante en ceramique WO2001030115A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/JP2000/005462 WO2001031978A1 (fr) 1999-10-22 2000-08-14 Plaque chauffante en ceramique
US09/916,682 US20020043528A1 (en) 1999-10-22 2001-07-30 Ceramic heater
US10/222,928 US20030000937A1 (en) 1999-10-22 2002-08-19 Ceramic heater

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP30088099 1999-10-22
JP11/300880 1999-10-22
JP11/335640 1999-11-26
JP33564099 1999-11-26

Publications (1)

Publication Number Publication Date
WO2001030115A1 true WO2001030115A1 (fr) 2001-04-26

Family

ID=26562488

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2000/000816 WO2001030115A1 (fr) 1999-10-22 2000-02-15 Plaque chauffante en ceramique

Country Status (1)

Country Link
WO (1) WO2001030115A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS536936A (en) * 1976-07-08 1978-01-21 Matsushita Electric Ind Co Ltd Heating body for electric heater
JPS54128945U (fr) * 1978-02-28 1979-09-07
JPH0319292U (fr) * 1989-07-07 1991-02-26
JPH0982786A (ja) * 1995-09-19 1997-03-28 Ngk Insulators Ltd 半導体処理装置およびその製造方法
JPH09289075A (ja) * 1996-04-23 1997-11-04 Sakaguchi Dennetsu Kk 面状発熱体用ヒーターエレメント
JPH11251040A (ja) * 1998-02-27 1999-09-17 Kyocera Corp セラミックヒータ及びその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS536936A (en) * 1976-07-08 1978-01-21 Matsushita Electric Ind Co Ltd Heating body for electric heater
JPS54128945U (fr) * 1978-02-28 1979-09-07
JPH0319292U (fr) * 1989-07-07 1991-02-26
JPH0982786A (ja) * 1995-09-19 1997-03-28 Ngk Insulators Ltd 半導体処理装置およびその製造方法
JPH09289075A (ja) * 1996-04-23 1997-11-04 Sakaguchi Dennetsu Kk 面状発熱体用ヒーターエレメント
JPH11251040A (ja) * 1998-02-27 1999-09-17 Kyocera Corp セラミックヒータ及びその製造方法

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