WO2001026152A1 - Dispositif a semi-conducteurs - Google Patents

Dispositif a semi-conducteurs Download PDF

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Publication number
WO2001026152A1
WO2001026152A1 PCT/JP2000/005785 JP0005785W WO0126152A1 WO 2001026152 A1 WO2001026152 A1 WO 2001026152A1 JP 0005785 W JP0005785 W JP 0005785W WO 0126152 A1 WO0126152 A1 WO 0126152A1
Authority
WO
WIPO (PCT)
Prior art keywords
wiring board
heat
semiconductor element
thermal
semiconductor
Prior art date
Application number
PCT/JP2000/005785
Other languages
English (en)
Japanese (ja)
Inventor
Yasuo Osone
Norio Nakazato
Yasunari Umemoto
Chushiro Kusano
Kiichi Yamashita
Shizuo Kondou
Sakae Kikuchi
Satoshi Sasaki
Mitsuaki Hibino
Masaki Nakanishi
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Publication of WO2001026152A1 publication Critical patent/WO2001026152A1/fr

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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    • H01L23/3677Wire-like or pin-like cooling fins or heat sinks
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    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'invention porte sur un dispositif à semi-conducteurs qui comprend un élément à semi-conducteurs (1) monté sur un substrat de câblage (2), des conducteurs cylindriques (3) s'étendant à travers le substrat de câblage (2) entre les deux côtés opposés, et un conducteur thermique (10) servant de raccordement thermique et électrique entre l'élément à semi-conducteurs (1) et les conducteurs cylindriques (3). La résistance thermique diminue du fait de ce raccordement thermique et électrique entre l'élément à semi-conducteurs (1) et les conducteurs cylindriques (3).
PCT/JP2000/005785 1999-09-30 2000-08-28 Dispositif a semi-conducteurs WO2001026152A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27818299A JP4480818B2 (ja) 1999-09-30 1999-09-30 半導体装置
JP11/278182 1999-09-30

Publications (1)

Publication Number Publication Date
WO2001026152A1 true WO2001026152A1 (fr) 2001-04-12

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ID=17593741

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PCT/JP2000/005785 WO2001026152A1 (fr) 1999-09-30 2000-08-28 Dispositif a semi-conducteurs

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JP (1) JP4480818B2 (fr)
WO (1) WO2001026152A1 (fr)

Cited By (2)

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FR2837061A1 (fr) * 2002-03-11 2003-09-12 Thales Sa Substrat multicouches ceramique pour composant de puissance, module et circuit electronique comportant le substrat et procede de fabrication du substrat
EP1407641A2 (fr) * 2001-06-28 2004-04-14 Conexant Systems, Inc. Structure et procede de fabrication d'un porte-puces sans conducteur

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JP4379769B2 (ja) * 2002-03-04 2009-12-09 日立金属株式会社 セラミック積層基板およびこれを用いたセラミック積層電子部品
US6787896B1 (en) * 2003-05-15 2004-09-07 Skyworks Solutions, Inc. Semiconductor die package with increased thermal conduction
US7554193B2 (en) 2005-08-16 2009-06-30 Renesas Technology Corp. Semiconductor device
JP2007188916A (ja) 2006-01-11 2007-07-26 Renesas Technology Corp 半導体装置
JP2009010045A (ja) * 2007-06-26 2009-01-15 Panasonic Electric Works Co Ltd 発光装置
DE102007056269A1 (de) * 2007-10-22 2009-04-23 Rohde & Schwarz Gmbh & Co. Kg Gekühltes Multichipmodul
FR2932004B1 (fr) * 2008-06-03 2011-08-05 Commissariat Energie Atomique Dispositif electronique empile et procede de realisation d'un tel dispositif electronique
JP2010027179A (ja) * 2008-07-24 2010-02-04 Sharp Corp ホログラムレーザユニットおよび光ピックアップ装置
JP2011014722A (ja) * 2009-07-02 2011-01-20 Tokai Rika Co Ltd 半導体チップの基板実装構造
JP5578355B2 (ja) * 2010-08-03 2014-08-27 株式会社ジェイテクト 多層回路基板を含む基板装置および多層回路基板の異常判定方法
JP6719400B2 (ja) * 2017-02-14 2020-07-08 三菱電機株式会社 半導体パッケージ
JP2020150026A (ja) 2019-03-11 2020-09-17 株式会社村田製作所 多層配線基板
WO2020203506A1 (fr) * 2019-04-01 2020-10-08 パナソニックセミコンダクターソリューションズ株式会社 Dispositif d'amplification de puissance

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EP1407641A2 (fr) * 2001-06-28 2004-04-14 Conexant Systems, Inc. Structure et procede de fabrication d'un porte-puces sans conducteur
EP1407641A4 (fr) * 2001-06-28 2010-05-12 Skyworks Solutions Inc Structure et procede de fabrication d'un porte-puces sans conducteur
FR2837061A1 (fr) * 2002-03-11 2003-09-12 Thales Sa Substrat multicouches ceramique pour composant de puissance, module et circuit electronique comportant le substrat et procede de fabrication du substrat
WO2003077313A2 (fr) * 2002-03-11 2003-09-18 Thales Substrat multi-couches ceramique pour des composants de puissance integres, et procede de fabrication du substrat
WO2003077313A3 (fr) * 2002-03-11 2004-07-15 Thales Sa Substrat multi-couches ceramique pour des composants de puissance integres, et procede de fabrication du substrat

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