WO2001006549A1 - Procede d'exposition et dispositif associe - Google Patents

Procede d'exposition et dispositif associe Download PDF

Info

Publication number
WO2001006549A1
WO2001006549A1 PCT/JP2000/004707 JP0004707W WO0106549A1 WO 2001006549 A1 WO2001006549 A1 WO 2001006549A1 JP 0004707 W JP0004707 W JP 0004707W WO 0106549 A1 WO0106549 A1 WO 0106549A1
Authority
WO
WIPO (PCT)
Prior art keywords
projection system
exposure
charged particle
movable member
particle beam
Prior art date
Application number
PCT/JP2000/004707
Other languages
English (en)
Japanese (ja)
Inventor
Nobutaka Magome
Motokatsu Imai
Yukio Kakizaki
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to AU60152/00A priority Critical patent/AU6015200A/en
Publication of WO2001006549A1 publication Critical patent/WO2001006549A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Definitions

  • the present invention relates to a lithographic apparatus for manufacturing a device such as a semiconductor device, an image pickup device (CCD or the like), a liquid crystal display device, a plasma display device, or a thin film magnetic head.
  • the present invention relates to an exposure method and apparatus used for transferring onto a substrate, especially charged particles that transfer various patterns such as a mask pattern or a character pattern onto a substrate via a charged particle beam such as an electron beam or an ion beam. It is suitable for use in a line transfer device.
  • a charged particle beam transfer apparatus capable of improving both the resolution of a transfer pattern and the throughput (productivity).
  • a transfer device is equivalent to one die corresponding to one integrated circuit (semiconductor chip, etc.) formed on one wafer as a photosensitive substrate, or
  • a batch transfer type apparatus for transferring a pattern of a plurality of dies from a mask onto a wafer coated with a resist sensitive to a charged particle beam has been studied.
  • the circuit pattern of each layer of one die on a substrate such as a wafer is, for example, a plurality of types of lines having a predetermined pitch • It can also be formed by combining and transferring images of a predetermined pattern (hereinafter referred to as “character pattern”) such as an and space pattern or a wiring pattern having a predetermined shape. it can. Therefore, a “character pattern transfer method” is used in which a large number of types of character patterns are formed in advance on a mask, and images of one character pattern selected from these are sequentially transferred onto a substrate in a predetermined arrangement. Development of a particle beam transfer device is being performed. For convenience of explanation, an area where a pattern image (for example, a reduced image) of one die is transferred on the substrate is called a shot area. The surface of the substrate is divided vertically and horizontally into a number of shot areas at predetermined pitches.
  • the ⁇ division transfer method '' is used to divide the circuit pattern to be transferred to the substrate into a plurality of sub-fields smaller than the size equivalent to one die, and transfer the reduced image of the pattern for each sub-field sequentially to the substrate. Development of a particle beam transfer device is also under consideration. Also in this division transfer method, it is desirable that the field of view of the projection system be as large as possible in order to transfer the pattern of each sub-field of view onto the substrate at high speed.
  • the MTP method is a method in which a deflector performs reduced projection using a projection system while the orbit of the charged particle beam is substantially aligned with the optical axis.
  • the deflector may use a charged particle beam. It is also possible to shift the position.
  • the deflector alone cannot transfer the image of the pattern corresponding to each position in one wide shot area on the substrate sequentially, so that conventionally, the substrate is mechanically moved by the substrate stage. This changed the transfer position of the image on the substrate. Also, the transfer position on the substrate was corrected by a deflector provided on the substrate as needed.
  • the substrate stage was mechanically driven two-dimensionally.
  • the smallest exposed area exposed by the image of one minimum unit pattern on the mask is called a "sub-exposure area”.
  • the images of the corresponding patterns are sequentially transferred into the elongated “main exposure region” having a width corresponding to approximately one sub-exposure region on the substrate, and then transferred.
  • the projection system in order to increase the field of view of the projection system, a method of simply enlarging the projection system is conceivable, but enlarging the projection system without increasing the aberration significantly increases the manufacturing cost. There is fear. Furthermore, since the optical path of the charged particle beam of the charged particle beam transfer device needs to be evacuated, the projection system should be as small as possible in order to make the vacuum vessel as small as possible and reduce the manufacturing cost. desirable.
  • the projected image is transferred with low aberration within a width of one to two sub-exposure areas on the substrate. Since the position could be shifted, when the substrate stage was scanned in the first direction using this electronic MOL method, the transfer was performed, for example, to the main exposure area with the width of two sub-exposure areas. If we do, the throughput can be improved by a factor of two. However, even in this case, it is necessary to repeat scanning by the substrate stage many times in order to expose the entire one shot region, and therefore, there has been a demand for the development of a technology for greatly improving the throughput.
  • a fourth object of the present invention is to provide an exposure apparatus capable of performing such an exposure method.
  • a fifth object of the present invention is to provide a device manufacturing method capable of manufacturing a high-performance device with high throughput by using the exposure method. Disclosure of the invention
  • the first exposure method comprises irradiating a first object (M) with a charged particle beam and projecting a charged particle beam having passed through the pattern of the first object (W) through a projection system (PL).
  • a projection system PL
  • At least a part of the The member (PL; 29) is displaced.
  • the movable members of the projection system are moved in a direction perpendicular to the normal line of the second object (W), or When displaced by 1, Ay2 in the direction perpendicular to the optical axis, the transfer position on the second object moves by ⁇ 1, ⁇ Y2 along the direction of displacement.
  • the method of mechanically displacing at least a part of the movable member of the projection system in this manner is hereinafter referred to as a “mechanical moving objective lens (M ⁇ L) method”.
  • this mechanical MOL method it is possible to reduce, for example, a reduced image of a pattern corresponding to a plurality of different positions on the second object, that is, to a wide area, without increasing the size of the projection system. Can be transferred.
  • the electromagnetic field in the projection system is electrically changed, and the irradiation position of the charged particle beam on the second object is changed. Is desirably corrected.
  • the conventional electronic MOL method is used in combination with the mechanical M ⁇ L method of the present invention. For example, as shown in Fig. 11, when at least a part of the projection system (PL) is mechanically displaced in a predetermined direction, the distribution of the electromagnetic field of the electromagnetic lens system constituting the projection system is changed.
  • the second object (W) By changing the position (27 A, 27 B, 29 A, 29 B) shown by the original dotted line to the position (27, 29) shown by the solid line, the second object (W)
  • the transfer position can be set to the same position (54 ⁇ ). Therefore, the accuracy of the transfer position on the second object is improved, and the overlay accuracy is improved during the overlay exposure.
  • a plurality of different patterns are formed on the first object, and the charged particle beam passing through the pattern selected from the first object according to the irradiation position on the second object is obtained. It is desirable to lead to a projection system. This corresponds to a case where the exposure method of the present invention is applied to a character pattern transfer method, a division transfer method, or the like.
  • the movable member is displaceable in a first direction, and the second object is moved in a second direction substantially orthogonal to the first direction. It is preferable that the pattern of the first object is transferred to an area on the second object that is longer than the moving distance of the movable member in the first direction. This further improves throughput.
  • the first object (M) is irradiated with a charged particle beam, and the charged particle beam passing through the pattern of the first object is projected through a projection system (PL).
  • a projection system PL
  • a plurality of different positions on the second object are each irradiated with a charged particle beam having passed through a corresponding pattern on the first object. Vibrates at least a part of the movable members (PL; 29) in a predetermined direction.
  • the second exposure method at least a part of the movable members of the projection system is vibrated in a predetermined direction by applying the mechanical moving objective lens (M ⁇ L) method of the present invention. Therefore, the pattern transfer position on the second object can be moved at high speed along the predetermined direction. At this time, at least some of the movable members of the projection system can be considerably reduced in weight compared to the stage for positioning the second object, so that the stage is mechanically moved in the predetermined direction. Exposure on the second object can be performed with greatly improved throughput compared to driving along.
  • M ⁇ L mechanical moving objective lens
  • the second object in synchronization with oscillating the movable member in the first direction (Y direction), the second object is moved in a second direction (X direction) crossing the first direction, It is desirable to irradiate a two-dimensional area on the second object with a charged particle beam having passed through a corresponding pattern on the first object.
  • the vibration in the first direction by the mechanical MOL method and the mechanical driving of the second object in the second direction for example, one of the When exposing the shot area (area for one die), the number of times the second object is mechanically driven in the second direction can be reduced. Therefore, the throughput of the exposure process is improved.
  • the transfer position of the pattern on the two objects deviates mainly from the target position (54A, 54B,...) In the second direction as shown by the locus (1 19). Therefore, the transfer position on the second object is corrected by correcting the transfer position of the pattern mainly in the second direction by combining the electronic MOL method so as to correct the displacement amount. For example, as shown by the locus (1 2 1) in Fig. 13 (D), the robot moves along the target position.
  • the transfer positions have reached the target positions (54A, 54B,...), Respectively. Then, by irradiating the charged particle beam for a very short time at that time tl, t 2,..., The pattern corresponding to the target position can be transferred.
  • a photosensitive material is coated on the second object, it is necessary to irradiate the charged particle beam onto the second object for a predetermined exposure time ⁇ t.
  • the first direction Y
  • the vibration frequency of the movable object may be controlled according to the sensitivity of the second object. Assuming that the intensity of the charged particle beam is constant, if the sensitivity of the second object is low, the exposure time ⁇ t becomes long, so that the vibration frequency needs to be lowered. On the other hand, when the sensitivity of the second object is high, the exposure time ⁇ t can be shortened, so that the vibration frequency The number can be higher.
  • the intensity of the charged particle beam source can be stably controlled, it is desirable to control the intensity of the charged particle beam according to the sensitivity of the second object.
  • the vibration frequency of the movable member can be kept constant, it is easy to control the mechanical drive system.
  • the position of the center of gravity of the mechanical system including the movable member and the balancer G It is desirable that the balancer be vibrated in phase opposite to that of the movable member so that the movable member does not move. Thereby, the movable member can be more stably vibrated, and the accuracy of the transfer position on the second object is improved.
  • the first exposure apparatus irradiates a first object (M) with a charged particle beam, and projects a charged particle beam having passed through the pattern of the first object through a projection system (PL).
  • a mechanical drive system at least one of the movable members of the projection system is displaced
  • 32 A, 32 B, 34 are provided.
  • a second object stage (46) for moving the second object with respect to the projection system in a plane substantially perpendicular to the optical axis of the projection system.
  • an electronic drive system for electrically changing an electromagnetic field in the projection system (35)
  • a control system for controlling the operation of the electronic drive system according to the operation of the second object stage and the operation of the mechanical drive system.
  • the first object is moved to the optical axis of the projection system.
  • the first exposure method of the present invention can be performed.
  • the second exposure apparatus irradiates the first object (M) with a charged particle beam, and emits a charged particle beam having passed through the pattern of the first object via a projection system (PL). W), the mechanical drive system (3) that vibrates at least some of the movable members of the projection system in order to move the irradiation position of the charged particle beam on the second object. 2 A, 32 B, 34).
  • the mechanical drive system vibrates the movable member along the first direction (Y direction), and a corresponding pattern on the first object is stored in a two-dimensional area on the second object.
  • a second object stage (46) for moving the second object in a second direction (X direction) intersecting the first direction.
  • an electronic drive system (35) for electrically changing an electromagnetic field in the projection system is provided, and the movable member is provided.
  • the charged particle beam via the electronic drive system in synchronism with the operation of oscillating the beam and the movement of the stage for the second object. It is desirable to correct the irradiation position on the second object.
  • the mechanical drive system includes, as an example, first and second leaf spring members (32A, 32B) arranged so as to sandwich the movable member and having mobility, and a support member for supporting the leaf spring member. (57A, 57B) and driving members (111A to 11D, 112A to 112D) for driving the movable member in a direction in which the two leaf spring members have flexibility. It has. Further, the mechanical drive system includes a balancer (128) arranged so as to surround the movable member, and a balancer holding member (32A to 32A) which holds the movable member and the balancer in a relatively displaceable state.
  • balancer 32D, 32E, 32F, and a balancer driving member (111A, 1111C, 129A, 129C) for driving the balancer. It is desirable that the balancer be vibrated in a phase opposite to that of the movable member so that the center of gravity (G) of the mechanical system including the movable member and the balancer is not substantially displaced.
  • the second exposure method of the present invention can be performed.
  • a first position detector (40, 41) for measuring the position of the movable member is provided, and the operation of the mechanical drive system is controlled according to the detection result of the first position detector. It is desirable. As a result, the control accuracy of the position of the movable member and the control accuracy of the transfer position on the second object are improved.
  • the method of manufacturing an exposure apparatus includes irradiating a first object (M) with a charged particle beam, and projecting a charged particle beam having passed through the pattern of the first object through a projection system (PL).
  • M first object
  • PL projection system
  • an exposure apparatus for irradiating W
  • at least a part of the movable member (PL; 29) of the projection system is moved to move the irradiation position of the charged particle beam on the second object.
  • a mechanical drive system 32 A, 32 B, 11 A, 1 1 2) that is attached to the support member (57A, 57B) in a state where it can be displaced or vibrated, and displaces or vibrates the movable member. A) is to be attached. According to such a manufacturing method, the exposure apparatus of the present invention can be manufactured efficiently.
  • a device manufacturing method includes a step of transferring a device pattern onto a workpiece using the above-described exposure method of the present invention.
  • an extremely fine pattern can be transferred with high precision onto a workpiece such as a substrate such as a wafer or a glass substrate for a mask by using a charged particle beam.
  • the mechanical MOL method of the present invention the throughput at the time of exposure is improved.
  • FIG. 1 is a configuration diagram showing a cross-sectional view of a part of an electron beam reduction transfer device according to a first embodiment of the present invention.
  • FIG. 2 (A) is a plan view showing the pattern arrangement of the mask M in FIG. 1, (B) is an enlarged plan view showing a portion B in FIG. 2 (A), and (C) is a plan view in FIG. It is sectional drawing which follows CC line.
  • 3A is a plan view showing a pattern arrangement of the wafer W in FIG. 1
  • FIG. 3B is an enlarged plan view of a portion B in FIG. 3A.
  • FIG. 4 is a cross-sectional view of a part of a state where the electron beam reduction transfer device of FIG. FIG.
  • FIG. 5 is a partially cutaway plan view showing the mask stage 20 of FIG. 4 and members related thereto.
  • Figure 6 shows the wafer stage 4 in Figure 4.
  • FIG. 6 is a partially cutaway plan view showing 6 and members related thereto.
  • Figure 7 is an enlarged perspective view showing an example of a mechanical drive system of the projection system PL in FIG. 1 £ 8 is an explanatory diagram of the operation of the mechanical drive system of FIG.
  • FIG. 9 is a partially cutaway plan view showing another example of the mechanical drive system of the projection system PL.
  • FIG. 10 is an explanatory diagram in the case where the position of the reduced image is changed by displacing the projection system PL by the mechanical MOL method in FIG. FIG.
  • FIG. 11 is an explanatory diagram of the case where the position of the reduced image is changed by changing the electromagnetic field of the electron optical system of the projection system PL by the electronic MOL method in FIG. 11.
  • FIG. 12 is an explanatory diagram in the case where exposure is performed by the character pattern transfer method in the first embodiment.
  • FIG. 13 is an explanatory diagram in the case of combining the operation of the mechanical MOL method with the operation of the electronic MOL method in the operation of FIG.
  • FIG. 14 is a plan view showing a locus of a reduced image on a wafer when the projection system PL is vibrated in a triangular waveform with respect to time by a mechanical MOL method.
  • FIG. 15 is an explanatory diagram in the case where exposure is performed by the division transfer method in the second embodiment of the present invention.
  • FIG. 16 is an explanatory diagram in the case where some members of the projection system PL are displaced or vibrated by the mechanical MOL method in the third embodiment of the present invention.
  • FIG. 17 is a perspective view showing a drive system when the projection system PL is displaced or vibrated by the counterbalance method and the mechanical M ⁇ L method in the fourth embodiment of the present invention.
  • FIG. 18 is an explanatory diagram of the arrangement and operation of the drive elements of the drive system in FIG.
  • FIG. 19 is a diagram illustrating an example of a manufacturing process of a semiconductor device. BEST MODE FOR CARRYING OUT THE INVENTION
  • the present invention is applied to a reduction transfer apparatus using an electron beam as a charged particle beam in a character pattern transfer method, that is, an electron beam exposure apparatus. Applied.
  • FIG. 1 shows a schematic configuration of an electron beam reduction transfer apparatus of the present example as an exposure apparatus.
  • an electron beam EB emitted from an electron gun 1 is converted into a parallel beam by a capacitor lens 2, and The light passes between the blanking deflectors 3 and is incident on an aperture plate 4 having an opening of a predetermined shape (square in this example).
  • the electron beam EB whose cross-sectional shape has been shaped by passing through the aperture of the aperture plate 4 during transfer passes through the condenser lens system 5 including the first condenser lens 6A and the second condenser lens 6B, and then becomes a parallel beam again.
  • a deflector 7 for selecting a field of view composed of a first deflector 8A and a second deflector 8B, and guided into one character pattern on a mask M as a first object. .
  • An illumination system is composed of an electron gun 1, a condenser lens 2, an aperture plate 4, and a condenser lens system 5, and the optical axis AX 1 of the illumination system is perpendicular to the pattern surface of the mask M.
  • the pattern surface almost matches the horizontal plane.
  • the electron gun 1 for example, a thermionic emission type lanthanum hexaborite (L a B 6 ) or tantalum (T a) can be used.
  • the electron gun 1 is used in a so-called low acceleration method in which the acceleration voltage is, for example, about several hundred V to 5 kV.
  • the optical path of the electron beam EB is set to, for example, a high vacuum of about 1 0- 7 T orr.
  • the mask M is arbitrarily irradiated with the electron beam EB by operating the blanking deflector 3 to remove the electron beam EB from the opening of the aperture plate 4 as shown by the dotted optical path 11. Can be interrupted. Further, the electron beam EB can be irradiated almost vertically on one character pattern located at a certain distance in the X direction and the Y direction from the optical axis AX 1 on the mask M by the deflector 7 for selecting the visual field. It is configured as follows. The opening and closing operation of the electron beam EB by the deflector 3 and the amount of deflection in the deflector 7 are A main control system 10 that controls and controls the operation is controlled via a deflection amount setting unit 9.
  • the Z-axis is taken parallel to the optical axis AX1 of the illumination system
  • the X-axis is set in the direction perpendicular to the paper of Fig. 1 in the plane perpendicular to the Z-axis
  • the Y-axis is set in the direction A description will be given taking the axis.
  • the electron beam EB that has passed through one character pattern on the mask M is returned to the optical axis of the illumination system again by the swingback deflector 25 composed of the first deflector 26 A and the second deflector 26 B.
  • the deflection amount of the electron beam EB in the deflector 25 is set by the main control system 10 via a deflection amount setting unit 36.
  • Each of the deflectors 8A and 8B and the deflectors 26A and 26B is, for example, a four-pole electrostatic deflector, but instead includes a coil mounted inside a ferrite core. Alternatively, an electromagnetic deflector may be used.
  • the electron beam EB passes through a projection system PL composed of an imaging system to reduce the electron beam EB as a second object at a reduction magnification ⁇ (for example, 3 is 1/5, 1/10, or 120).
  • a reduced image of one character pattern is formed in the exposed area (sub-exposure area) on W8. That is, the pattern surface of the mask ⁇ as the first object is located on the object surface of the projection system PL, and the surface of the wafer W as the second object (or object to be exposed) is located on the image surface of the projection system PL. I have.
  • An electron beam resist is applied to the surface of the wafer W.
  • the wafer W is a disk-shaped substrate such as a semiconductor (silicon or the like) or S ⁇ I (silicon on insulator).
  • the projection system PL of this example includes a front group 27 including a first lens 28A and a second lens 28B, and a rear group 29 including a first lens 30A and a second lens 30B.
  • the front group 27 and the rear group 29 are housed in a cylindrical lens barrel 31.
  • the lenses 28A and 28B and the lenses 30A and 30B are each an eight-pole electrostatic lens as an example, but an electromagnetic lens may be used instead.
  • the electron beam EB is once focused by the front group 27 to form a crossover (image of the electron beam source) 42, and thereafter, the rear group 29 forms a projection image on the wafer W. .
  • the optical axis AX2 of the projection system PL is parallel to the optical axis AX1 of the illumination system.In the initial state, the optical axis AX2 of the projection system PL matches the optical axis AX1 of the illumination system and the lens barrel. 3 The axis of symmetry (center axis) of 1 also matches.
  • the lens barrel 31 in which the projection system PL is housed is supported by a pair of leaf springs 32A and 32B as members having flexibility in the Y direction. Both ends in the X direction of A and 32B are fixed to stably held support members 57A and 57B (not shown) (see FIG. 7). Therefore, the lens barrel 31 (projection system PL) is supported so that it can be displaced and vibrated within a predetermined range in the Y direction.
  • a drive system 34 for displacing and vibrating the leaf springs 32A and 328 in the directions is provided, and the operation of the drive system 34 is controlled by a synchronous drive control system 33 under the control of the main control system 10. Has been done.
  • a movable mirror 40 is fixed to a side surface of the lens barrel 31 in the Y direction, and the movable mirror 40 is irradiated with a laser beam of a plurality of axes for measurement from a laser interferometer 41, and the laser interferometer 41 is not shown.
  • the displacement of the lens barrel 31 in the Y direction, the rotation angle around the X axis, and the rotation angle around the Z axis are measured based on the position of the reference mirror of 34 and the alignment control system 39 described later.
  • the drive system 34 moves the lens barrel 31 (projection system PL) in a state where the optical axis AX 2 is parallel to the optical axis AX 1 based on the measurement data of the laser interferometer 41 and the control information of the synchronous drive control system 33. Displace in the Y direction. That is, the projection system PL of this example is a mechanical M ⁇ L (Moving Objective Lens) system using a mechanical drive system including the leaf springs 32A and 32B, the laser interferometer 41, and the drive system 34. , So that it can be displaced and vibrated in the Y direction. Therefore, in this example, the projection system ⁇ However, the whole is a movable member.
  • the projection system PL is, for example, a small electron optical system in which the distance from the object plane (the pattern plane of the mask M) to the image plane (the surface of the wafer W) is about 100 to 150 mm.
  • the MOL method enables high-speed, high-precision displacement and vibration.
  • the distribution of the internal electromagnetic field is indicated by dotted virtual lenses 44 and 45, using the electronic M ⁇ L (Moving Objective Lens) method.
  • the optical axis AX2 can be displaced within a predetermined range in the X direction and the Y direction with respect to the symmetry axis of the lens barrel 31.
  • the displacement of the optical axis AX2 by the electronic MOL method with the aberration kept within the allowable range is, for example,
  • the projection system PL is displaced or oscillated relatively large by the mechanical M ⁇ L method
  • the transfer position on the wafer W is corrected.
  • the optical axis AX2 is displaced by a typical MOL method. Therefore, the lenses 28 A and 28 B and the lenses 3 OA and 30 B as the electron optical systems constituting the projection system PL are respectively driven by the lens driving system 35 as the electronic driving system, and the lens driving system 35 is It is controlled by the synchronous drive control system 33.
  • the mask M is held on the mask stage 20 in parallel with the XY plane by electrostatic attraction so as not to affect the electron beam, and the mask stage 20 is placed on the mask base 21 by, for example, a linear motor. It is configured to be able to move stepwise in the X and Y directions. Since the exposure unit of the transfer device of this example is placed in a vacuum, the mask stage 20 is an air-bearing type that has almost no effect on the vacuum space, or a magnetic levitation type bearing that strictly shields the electron beam. Almost non-contact state On the mask base 21.
  • a group of a plurality of character patterns in each of which a plurality of character patterns are arranged close to each other is first used by moving the mask stage 20. After the center of the character pattern group is positioned approximately in the vicinity of the optical axis AX1, a deflector 7 for selecting a visual field is used to select one character and one pattern from the character and pattern group.
  • a moving mirror 22 fixed to the mask stage 20 (actually composed of an X-axis and a Y-axis) is irradiated with a multi-axis laser beam from the laser interferometer 23 on the mask side. Measures the position of the mask stage 20 in the X and Y directions, the rotation angle around the X axis, the rotation angle around the Y axis, and the rotation angle around the Z axis (jowing amount).
  • the alignment control system 39 supplies measured values and alignment information to the main control system 10, and the mask stage control system 24 supplies a mask stage based on the measured values and control information from the main control system 10.
  • 20 (Mask M) is made parallel to the XY plane, and its position, speed, and jogging amount are controlled.
  • a masked backscattered electron detector 37 for detecting backscattered electrons and the like from the mask M is disposed diagonally above the mask stage 20, and a detection signal of the backscattered electron detector 37 is supplied to an alignment control system 3. Supplied to 9. Since the state in which the electron beam EB is irradiated on the predetermined alignment mark on the mask M can be detected by the reflection electron detector 37, the mask M can be aligned based on the detection result.
  • the wafer W is held on the wafer stage 46 in parallel with the XY plane by an electrostatic chuck or the like that does not affect the electron beam via a wafer holder (not shown).
  • the wafer stage 4 6 is the wafer base 4 7 Above, for example, it is configured to be able to continuously move in the X direction by a linear motion method, and to be able to move stepwise in the X direction and the Y direction.
  • the wafer stage 46 is mounted on the wafer base 47 almost in a non-contact state by an air-bearing system that has almost no effect on the vacuum space or a magnetic levitation type bearing system that strictly shields the electron beam. Have been.
  • the wafer stage 46 also incorporates a Z leveling mechanism for controlling the position (focus position) of the surface of the wafer W in the Z direction and its two-dimensional inclination angle.
  • Information on the focus position at multiple measurement points on the surface of the wafer W Force is measured by an optical, multipoint autofocus sensor (AF sensor) (not shown), and Z leveling in the wafer stage 46 during exposure.
  • the mechanism focuses the surface of the wafer W on the image plane of the projection system PL by an autofocus method based on the measurement value of the AF sensor.
  • a movable mirror 48 fixed to the side of the wafer stage 46 (also composed of X-axis and Y-axis) is irradiated with a laser beam of multiple axes from a laser interferometer 49 on the wafer side.
  • the interferometer 49 is used to determine the position of the wafer stage 46 in the X and Y directions, the rotation angle around the X axis (the amount of rolling), the rotation angle around the Y axis (the amount of pitching), and the rotation around the Z axis.
  • the angle (jowing amount) is measured, and the measured value is supplied to the alignment control system 39 and the wafer stage control system 50.
  • the wafer stage control system 50 controls the measured value and the synchronous drive control system 33.
  • the wafer stage 46 (wafer W) is made parallel to the ⁇ plane, and its position and amount of movement are controlled.
  • a reflected electron detector 38 for the wafer for detecting backscattered electrons and the like from the wafer W is disposed obliquely above the wafer stage 46, and a detection signal of the backscattered electron detector 38 is used for the alignment control system 3. Supplied to 9.
  • the reflected electron detector 38 can detect the state in which the electron beam EB irradiates a predetermined alignment mark on the wafer W, and based on this detection result, The wafer W can be aligned.
  • the exposure data such as the pattern configuration of the mask M to be exposed and the arrangement information of a plurality of shot areas on the wafer W are supplied to the main control system 10 from an exposure data storage device (not shown). Is done.
  • the main control system 10 Based on the exposure data, the main control system 10 sequentially irradiates the electron beam EB onto a plurality of character patterns selected from the mask M via the mask stage drive system 24 and the deflection amount setting units 9 and 24.
  • the main control system 10 sequentially irradiates the electron beam EB onto a plurality of character patterns selected from the mask M via the mask stage drive system 24 and the deflection amount setting units 9 and 24.
  • a reduced image of the selected character and one pattern is formed on the wafer. It is transferred to the shot area to be exposed on W.
  • a reduced image of the target pattern is transferred to each shot area on the wafer W.
  • FIG. 2 (A) is a plan view showing an example of a mask M to be transferred
  • FIG. 2 (B) is an enlarged view of a portion B in FIG. 2 (A)
  • FIG. 2 (C) is a CC in FIG. 2 (B).
  • FIG. 2A a character pattern group 13 is formed at a predetermined pitch in the X direction and the Y direction in the pattern area of the mask M, and a pair of two-dimensional patterns is sandwiched between the pattern areas in the Y direction.
  • Alignment marks 14A and 14B made of a metal film are formed.
  • the mask M has a large number of character patterns formed inside a silicon wafer, and a notch portion 12 for angle detection is formed on an outer peripheral portion thereof.
  • each character pattern group 13 on the mask M has different character patterns 15 A, 15 B, 15 C,... At different pitches in the X and Y directions. , 15 Y are formed.
  • the character pattern group in the mask M A portion 17 where 13 is formed is formed thinner than other regions, and a portion corresponding to the character pattern (a portion that transmits an electron beam) in the portion 17 is a hole.
  • the portion 17 may be a thin film of silicon (Si), but the portion 17 may be a thin film of, for example, silicon nitride (SiN).
  • the mask M of this example is a so-called perforated stencil mask, and the mask M is a so-called so-called stencil mask provided with a thin film for scattering electron beams such as tungsten (W) on a film that transmits electron beams.
  • a scattering mask may be used.
  • each character pattern 15A to 15Y is formed in a square area having a width D, and the boundary between adjacent character patterns is an electron beam. This is a region that does not transmit light or a region that scatters electron beams (non-pattern region).
  • the irradiation area 14 in FIG. 2 (B) by the electron beam EB in FIG. 1 is a square having a width slightly larger than D, and one character selected from the character pattern group 13 is selected. It is configured such that only the pattern (for example, 15 A) can be completely covered by the irradiation area 14.
  • a plurality of different character patterns are formed in different character pattern groups 13 respectively.
  • each of the character patterns 15A to 15Y corresponds to a “sub-field of view” which is a minimum unit pattern obtained by dividing a large original pattern.
  • two-dimensional (here, cross-shaped) alignment marks 16 A to 16 D made of a metal film that reflects an electron beam are formed.
  • FIG. 1 after driving the mask stage 20 to sequentially move the alignment marks 14 A and 14 B of FIG. 2A on the mask M substantially in the vicinity of the optical axis AX 1 By driving the deflector 7 and scanning the electron beam EB in the X and Y directions, By processing the detection signal, the coordinates of the alignment marks 14A and 14B are detected, and the center coordinate and the rotation error of the mask M are calculated from the detection result. Thereafter, for example, by rotating the mask stage 20 so as to cancel the rotation error, the array coordinates of each character and pattern group 13 on the mask M can be calculated.
  • the deflector 7 is driven to scan the electron beam EB in the X and Y directions to process the detection signal from the backscattered electron detector 37, thereby obtaining the alignment mark 1 in FIG. 2 (B). Detect the coordinates of at least two alignment marks in 6A to 16D. Then, by processing the obtained coordinates of the two alignment marks, the optical axis AX1 of each of the character patterns 15A to 15Y in the character pattern group 13 is set as the origin. Can be calculated with high accuracy.
  • the electron beam irradiation area can be accurately placed on the desired character pattern in the character pattern 15A to 15Y. 14 can be moved, and the electron beam transmitted through the desired character pattern can be returned to the optical axis AX1 with high precision via the deflector 25 in FIG. That is, in this example, the arrangement coordinates of the character-to-character patterns 15A to 15Y in each character pattern group 13 are finally obtained based on the positions of the alignment marks 16A to 16D. Therefore, the positioning accuracy of the mask stage 20 in FIG. 1 does not need to be so high.
  • the width D of the outer shape of the character one pattern 15 A to 15 Y is, for example, about 100 m to l 00 / zm.
  • each character one pattern group 1 3 Each character pattern of 5 rows x 5 columns is formed in each character pattern, but in each character pattern group 13, character patterns of about 5 rows x 5 columns to 20 rows x 20 columns are formed. be able to.
  • FIG. 3 (A) is a plan view showing the wafer W
  • FIG. 3 (B) is an enlarged view of a portion B in FIG. 3 (A)
  • FIG. A large number of shot areas 52 are arranged at predetermined pitches in the X and Y directions, and a circuit pattern for one die is transferred to each shot area 52. Note that a circuit pattern for a plurality of dies may be transferred to each shot area 52.
  • a pair of two-dimensional metal film search alignment marks 53 A and 53 B are formed so as to sandwich the shot regions 52 in the Y direction. Has a notch 51 for angle detection.
  • each shot area 52 is a minimum unit exposure area to which a reduced image of one character pattern is transferred. Are arranged closely in the X and Y directions. Also, assuming that a reduced image of one character pattern by the projection system PL in Fig. 1 is a reduced image 43 in Fig. 3 (B), the width D of the outer shape of the character pattern and the projection magnification of the projection system PL are used. Each of the reduced image 43 and the sub-exposure area 54 is a square area of width 3D. Then, by moving the shot area 52 relative to the sequentially changing reduced image 43 in the X and Y directions, the character pattern corresponding to all the sub-exposure areas 54 of the shot area 52 is obtained. Is transferred.
  • each sub-exposure area 54 in the shot area 52 on the wafer W is 50
  • the shot area 52 is, for example, a rectangular or square area having a side length of about 20 to 30 mm.
  • the projection system PL is mechanically displaced or vibrated as described later in order to transfer a reduced image of the character pattern corresponding to all the sub-exposure regions 54 in the projection region 52 at a high throughput.
  • FIG. 4 is a cross-sectional view showing the entirety of the transfer device of the present example.
  • the transfer device of the present example has a box-shaped solid frame 60 capable of maintaining the inside in an airtight state.
  • the frame 60 is housed in a larger chamber (not shown).
  • a dry air or the like which is temperature-controlled at a substantially atmospheric pressure and is highly dust-proof, is provided. Is supplied.
  • the frame 60 is mounted on the base member 65 via the vibration isolating tables 64 A and 64 B (actually arranged at three or four places).
  • the decompression chambers 67 and 69 correspond to the spare chamber of the present invention.
  • a plurality of exhaust holes are formed from the top to the bottom on the side wall surrounding the exposure chamber 66, and these exhaust holes are connected to the vacuum pump 63 via exhaust pipes 62A to 62E, respectively.
  • internal exposure chamber 6 6 is maintained at a high vacuum of about 1 0- 7 T orr example by a vacuum pump 6 3 when.
  • a partition plate 93 (see FIG. 5) is provided so as to surround the decompression chamber 67 on the mask side, and a boundary between the exposure chamber 66 and the decompression chamber 67 is opened and closed by a drive unit 77A.
  • a shirt member that is opened and closed by the drive unit 77B. 7 6 B is installed.
  • a partition plate 94 (see FIG. 6) is provided so as to surround the decompression chamber 69 on the wafer side, and the boundary between the exposure chamber 66 and the decompression chamber 69 is opened and closed by a drive unit 87A.
  • a shirt evening member 86B that is opened and closed by a drive unit 87B is installed.
  • exhaust pipes 62F and 62G respectively, which lead to a vacuum pump 63, and a solenoid valve that can be opened and closed to take in ambient gas as needed.
  • a supply line with 788 and 88 is connected.
  • tables 79 and 89 are provided in the decompression chambers 67 and 69 for transferring a mask and a wafer, respectively.
  • the electron gun 1 is arranged in the sealed cover 61 above the frame 60, and the condenser lens 2, the condenser lens system 5, and the field selection
  • the deflector 7 and the mask M are arranged.
  • members such as the aperture plate 4 in FIG. 1 are not shown in FIG. 4 for easy understanding of the drawing.
  • the mask base 21 is fixed to the frame 60, and a coarse movement stage 73 for driving the mask stage 20 holding the mask M is arranged.
  • the mask base 21 is driven by a pair of linear motors 74 A and 74 B in the Y direction with respect to the mask base 21.
  • FIG. 5 is a plan view in which a part of a drive system and a measurement system of the mask stage 20 in FIG. 4 is shown in cross section.
  • the side surfaces of the mask stage 20 in the X direction and the Y direction are shown.
  • X-axis movable mirror 2 2 X and Y-axis movable mirror 2 2 Y are fixed, and reference mirrors 2 2 RX and 2 are placed on mask base 2 1 in parallel with movable mirrors 2 2 X and 2 2 Y, respectively.
  • 2 RY is fixed.
  • the moving mirror 22 X and the reference mirror 22 RX are moved along the X axis with respect to a plurality of axes, respectively.
  • a single-axis laser beam is irradiated, and the Y-axis laser interferometer 23 Y is moved to the moving mirror 22 Y and the reference mirror 22 RY via the window member 71 Y provided on the frame 60.
  • the laser interferometers 23 X and 23 Y are irradiated with laser beams of multiple axes and one axis, respectively, along with, and the moving mirrors 22 X and 22 Y are referenced with respect to the reference mirrors 22 RX and 22 RY.
  • the X coordinate and Y coordinate of Y (mask stage 20) and the rotation angle around three axes are measured.
  • the mask stage 20 is disposed in the U-shaped coarse movement stage 73, and the coarse movement stage 73 is substantially parallel to the Y axis with respect to the mask base 21. It is driven in the Y direction by linear motors 74A and 74B along the simple guide surface 21a.
  • a guide surface 73a substantially parallel to the X-axis is formed on the inner surface of the coarse movement stage 73, and a guide member 96 is slidably disposed along the guide surface 73a.
  • the mask stage 20 is disposed via two actuating sections 95A and 95B that can be extended and contracted in the Y direction with respect to the guide member 96, respectively.
  • the actuary 95A and 95B include, for example, a so-called EI core type non-contact actuator having an electromagnet having an E-shaped core and an I-shaped core.
  • One-touch contact or a small linear motor can be used.
  • a mover fixed to the end in the + Y direction of the mask stage 20 and a stator fixed to one side of the coarse movement stage 73 constitute a linear motor 74 D.
  • the linear motor 74 C is composed of a mover fixed to the guide member 96 and a stator fixed to the other side of the coarse movement stage 73.
  • the guide member 96 and the mask stage 20 are integrally driven in the X direction with respect to the coarse movement stage 73 by 4C and 74D. Be moved. Further, by controlling the amount of expansion and contraction of the two-axis factories 95A and 95B, the rotation angle (jowing amount) of the mask stage 20 with respect to the coarse movement stage 73 (mask base 21) is controlled. Can be controlled.
  • the positional relationship between the mask and the table 79 in the decompression chamber 67 is maintained close to the boundary between the decompression chamber 67 and the mask stage 20 in the exposure chamber 66.
  • a robot arm 75 for transferring the mask up to the mask is provided.
  • a rotary table 81 for temporarily mounting a mask is installed, and an imaging type position detecting device 82A around the rotary table 81.
  • ⁇ 82 C has been installed.
  • a mask library 97 is installed near the opening communicating with the outside air of the mask storage room 68, and a plurality of types of character patterns different from the plurality of character patterns formed on the mask M are provided in the mask library 97. A plurality of masks on which a character pattern group is formed (the uppermost mask MN appears) are stored.
  • a robot arm 80 for transferring a mask between the mask library 97, the rotary table 81, and the table 79 in the decompression chamber 67 while maintaining the positional relationship of the mask in a predetermined state is installed.
  • a mask loader system is composed of the robot arm 75, the table 79, the mouth pot 80, and the like.
  • the position of the notch at the outer periphery of the mask placed at the position P2 on the rotary table 81 taken out of the mask library 97 and the other two edges are detected by the position detecting device 82A.
  • the position detecting device 82A By detecting at up to 82 C, it is possible to detect a rotation error and a two-dimensional position error based on the notch of the mask.
  • the rotary table 81 is rotated so as to cancel the rotation error, and the mask is moved through the robot arm 80 so as to cancel the two-dimensional position error.
  • the shirt members 76A and 76B are closed and the electromagnetic valve 78 is turned on.
  • the inside of the decompression chamber 67 is brought to the atmospheric pressure
  • the shirt member 76B is opened, and the mask on the table 79 is returned to the mask library 97 in the mask storage chamber 68 (see FIG. 5).
  • a deflector 25 for rewinding, a projection system PL and a wafer W are sequentially arranged below the mask base 21 in the exposure chamber 66, and the projection system PL is connected to the lens barrel 31 and the leaf spring 3 2.
  • the supporting members 57 A and 57 B which are held via A and 32 B (see FIG. 1), are stably fixed to the frame 60, and the wafer W is placed on the wafer stage 46 via the wafer holder 98.
  • the wafer stage 46 is mounted on a wafer base 47 so as to be movable two-dimensionally.
  • the wafer base 47 is fixed on the bottom surface of the frame 60, and a coarse movement stage 83 for driving the wafer stage 46 is mounted on the wafer base 47.
  • the coarse movement stage 83 is arranged and driven by a pair of linear motors 84 A and 84 B in the Y direction with respect to the wafer base 47.
  • the measurement system for the wafer stage which includes the moving mirror 48 on the wafer side and the laser interferometer 49, etc., is actually composed of elements for two axes as shown in FIG. ing.
  • FIG. 6 is a plan view in which a part of a drive system and a measurement system of the wafer stage 46 in FIG. 4 is shown in cross section.
  • the side surfaces of the wafer stage 46 in the X direction and the Y direction are shown.
  • the X-axis movable mirror 48 and the X- and Y-axis movable mirrors 48 Y are fixed, respectively, and the reference mirrors 48 RX and 48 RY are mounted on the wafer base 47 in parallel with the movable mirrors 48 X and 48 Y, respectively. Has been fixed.
  • the moving mirror 48 X and the reference mirror 48 RX are respectively moved along the X axis to the plural axes and A single-axis laser beam is irradiated, and a Y-axis laser interferometer 49 Y is applied to a moving mirror 48 Y and a reference mirror 48 RY via a window member 72 Y provided in a frame 60.
  • the laser interferometers 49 X and 49 Y are illuminated by a multi-axis and a single-axis laser beam, respectively.
  • the X- and Y-coordinates of the movable mirror 48 X, 48 Y (wafer stage 46) and the rotation angles around three axes are measured with reference to 8 RX and 48 RY.
  • the wafer stage 46 is disposed in a U-shaped coarse movement stage 83 laterally, and the coarse movement stage 83 is a guide substantially parallel to the Y axis with respect to the wafer base 47. Driven in the Y direction by linear motors 84 A and 84 B along the drive surface 47 a.
  • a guide surface 83 a substantially parallel to the X-axis is formed on the inner surface of the coarse movement stage 83, and a guide member 100 is slidably disposed along the guide surface 83 a. , Each of which is non-contact and extendable and contractible in the Y direction with respect to the guide member 100.
  • a wafer stage 46 is arranged via 9 9 B. As in the case of the mask stage 20 of FIG. 5, the wafer stage 46 and the guide member 100 of FIG. 6 are integrally moved by a pair of linear motors 84 C and 84 D. Driven in the X direction along guide surface 83a with respect to 83. Further, by controlling the amount of expansion and contraction of the two-axis actuators 99A and 99B, the rotation angle (jewing amount) of the wafer stage 46 with respect to the coarse movement stage 83 (the wafer base 47) is controlled. Can be controlled.
  • the positional relationship of the wafer is maintained in a predetermined state in the exposure chamber 66 near the boundary with the decompression chamber 69, and between the table 89 and the wafer stage 46 in the decompression chamber 69.
  • a robot arm 85 that transfers wafers to the robot is installed.
  • a rotary table 91 for temporarily mounting a wafer is installed, and around the rotary table 91, three image-sensing type position detecting devices are provided. 9 2 A to 92 C are installed. Further, a wafer cassette 101 is installed near the opening communicating with the outside air of the wafer storage room 70, and the exposed or unexposed wafer (the uppermost wafer WN appears in the wafer cassette 101). Is stored. Then, a wafer is transferred between the wafer cassette 101, the rotary table 91, and the table 89 in the decompression chamber 69 while maintaining a predetermined positional relationship of the wafer. Arm 90 is installed.
  • the wafer loader system is composed of the mouth pot arm 85, the table 89, the robot arm 90, and the like.
  • the wafer on the table 89 is loaded into the opening in the exposure chamber 66.
  • the shirt evening member 86A is closed and the shirt evening member 86B is moved.
  • the shutter member 86B and the electromagnetic valve 88 are also closed in a state where the wafer is opened and the wafer is placed at the position P3.
  • the shirt member 86 A is opened, and the wafer is loaded onto the wafer holder 98 from the position P 3.
  • the shirt members 86A and 86B are closed and the electromagnetic valve 88 is turned on.
  • the shirt member 86B is opened and the wafer on the table 89 is returned to the wafer cassette 101 in the wafer storage chamber 70 (see Fig. 6). It is.
  • the decompression chamber 69 since the decompression chamber 69 is provided, the wafer can be quickly exchanged between the vacuum exposure chamber 66 and the atmospheric pressure wafer storage chamber 70.
  • the wafer opening system (the same applies to the mask loader system) may be divided into a load system and an unload system so as to shorten the wafer (mask) replacement time.
  • at least two wafer stages 46 may be arranged to execute various operations such as load alignment of the next wafer in parallel with exposure of one wafer. .
  • a plurality of alignment marks on the wafer are detected by a mark detection system, and a pattern is detected based on the detection result.
  • Sub-dew in each shot area on Yagami The light region and the corresponding reduced image of the sub-field on the mask are accurately aligned.
  • the mark detection system detects the mark to be inspected by an electron beam, but an optical mark detection system may be used instead.
  • FIG. 7 is an enlarged perspective view, partially cut away, showing an example of members from the field-of-view selection deflector 7 to the wafer W in FIG. 1.
  • the character pattern to be exposed on the mask M is shown.
  • the center of group 13 almost coincides with the optical axis AX1 of the illumination system.
  • the positions of at least two alignment marks in the alignment marks 16A to 16D in FIG. 2 (B) are detected. It is assumed that the arrangement coordinates with the optical axis AX1 of the character pattern 15A to 15Y as the origin are determined with high precision.
  • the irradiation area 14 of the electron beam EB is The electron beam EB that has moved on the character pattern 15 N and has passed through the character pattern 15 N is accurately moved on the optical axis AX 1 by the deflector 25 for swingback.
  • the optical axis AX1 of the illumination system coincides with the optical axis AX2 of the projection system PL.
  • a reduced image 43 obtained by reducing the character pattern 15N at a projection magnification of 3 is formed on one sub-exposure area of the square sub-exposure area 54.
  • the projection system PL is housed in the lens barrel 31, and the lens barrel 31 is a pair of plates.
  • the leaf springs 32A and 32B are held so as to be sandwiched in the Y direction, and both ends of the leaf springs 32A and 32B in the X direction are fixed to support members 57A and 57B. Therefore, the projection system PL is supported by the leaf springs 32A and 32B so as to be able to be displaced and vibrated in the Y direction.
  • the extensible drive elements 111 A, 111 B, 112 A, and 112 B, each composed of a piezo element, are fixed to one surface of the leaf springs 32 A and 32 B in the Y direction by bonding or the like.
  • the leaf springs 32A and 32B also have expandable and contractible piezo elements so as to face the drive elements 11A, 1118 and 1128, and 112B on the + Y direction surfaces, respectively.
  • Driving elements 1 1 1C, 1 1 10 and 1 12 (:, 1 1 2D are fixed.
  • driving elements 1 1 1A to: L 1 1D, 1 12A to 1 12D are piezo elements. It is also possible to use an electrostrictive element or a magnetostrictive element other than the above.
  • a control unit (not shown) separates one set of drive elements 11A, 11B, 12A, and 12B.
  • the projection system PL By expanding and contracting a set of the driving elements 1 1 1 C, 1 1 1 D, 1 1 2 C, 1 1 2 D at a constant period while the phases are inverted, the projection system PL as a whole Y Vibrates in the direction parallel to the axis (Y direction).
  • the mechanical vibration direction MV of the projection system PL is in the Y direction.
  • the drive elements 111 A to 111 D, 112 A to 112 D, and the control system are the drive system shown in Fig. 1. 34 is supported.
  • Fig. 8 shows the relationship between the expansion and contraction state of the driving elements 111A and L11D and 112A to 112D and the displacement of the projection system PL (barrel 31).
  • the projection system PL is not displaced.
  • FIG. 8 (B) one set of drive elements 1 1 1 A, 1 1 1 B, 1 1 2 A, 1 1 2 B shrinks and another set of drive elements 1 1
  • the leaf springs 32 A and 32 B are bent in the + Y direction, and the projection system PL is also displaced in the + Y direction (direction MVA).
  • one set of driving elements 1 1 1A and 1 1 1 1 When B, 1 12 A, 1 12 B expands and another set of driving elements 1 1 1 C, 1 1 1 D, 1 1 2 C, 1 1 2 D contracts, leaf springs 32 A, 32
  • the projection system PL When B moves in the Y direction, the projection system PL is also displaced in one Y direction (direction MVB).
  • the projection system PL can be oscillated in the Y direction by expanding and contracting the two driving elements at a constant period (constant frequency) with the phases inverted.
  • the amplitude of the projection system PL during vibration can be controlled.
  • a movable mirror 40 composed of a mirror having a reflecting surface substantially parallel to the ZX plane is fixed to a side surface in the Y direction of the lens barrel 31, and a reference mirror 40 R substantially parallel to the movable mirror 40. Is arranged.
  • the reference mirror 4OR is fixed to a support member (not shown) so as not to be displaced relative to the support members 57A and 57B. Then, the laser interferometer 41 fixed to the supporting member irradiates the movable mirror 40 with a three-axis laser beam, and irradiates the reference mirror 40R with, for example, a one-axis laser beam.
  • a ⁇ By controlling the amount of expansion and contraction of L11D, 112A ⁇ 112D, the lens barrel 31 and the projection system PL are rotated at a predetermined amplitude and at a predetermined frequency without rotation. Vibrates along the mechanical vibration direction MV.
  • the displacement and rotation angle of the projection system PL are actually measured by the laser interferometer 41, and the measured values are fed back to the drive system. Can be stably vibrated in the Y direction as a whole.
  • the displacement of the projection system PL is monitored.
  • an expansion / contraction measuring element such as a strain gauge is attached to at least one surface of each of the leaf springs 32A and 32B, and the expansion / contraction measuring element is used as the leaf spring 3A.
  • the amount of expansion and contraction of 2 A and 32 B may be directly measured. Further, in order to monitor the amount of displacement of the projection system PL, a non-contact capacitance sensor or an optical gap sensor may be used.
  • two pairs of drive elements 11 1A to 11 ID are attached to one leaf spring 32A (the same applies to 32B).
  • Elements, for example, four pairs of drive elements in two rows in the Z direction are attached to one leaf spring 32A (the same applies to 32B).
  • the amplitude of projection system PL can be increased.
  • a pair of driving elements or only one driving element is attached to one leaf spring 32A (the same applies to 32B). Just do it.
  • the mechanical drive system of the projection system PL of this example uses a telescopic drive element.
  • the projection system PL is configured using a voice coil motor or linear motor. It may be mechanically displaced.
  • Fig. 9 shows an example of the configuration of a mechanical drive system that drives the projection system PL using a voice coil motor system.
  • the lens barrel 31 in which the projection system PL is housed is formed by leaf springs 32A and 32B.
  • the leaf springs 32A and 32B are fixed to support members 57A and 57B.
  • a cylindrical member 1 13 A, 1 13 B made of a non-magnetic material is fixed to the outer surface of each of the leaf springs 32 A, 32 B, and a coil is attached to the tip of the cylindrical member 1 13 A, 1 13 B. 1 1
  • permanent magnets 115A and 115B as magnets are inserted into the cylindrical members 113A and 113B in a non-contact state, and inserted into the permanent magnets 115A and 115B.
  • A, 1 16 B are fixed.
  • the permanent magnets 1 15 A, 1 15 B and the yoke 1 16 A, 1 16 B are fixed to a support member (not shown) so as not to be displaced relative to the support members 57 A, 57 B. .
  • the voice coil motor is composed of coils 114A and 114B, permanent magnets 115A and 115B, and yokes 1116A and 116B.
  • VCM voice coil motor
  • the coils 114A and 114B move along the direction in which the leaf springs 32A and 32B have flexibility, that is, the mechanical vibration direction MV.
  • a thrust consisting of Lorentz force is generated in the same direction.
  • the leaf springs 32A and 32B are radiused in that direction, and the lens barrel 31 (projection system PL) is also displaced.
  • the projection system PL is vibrated at the predetermined frequency and the predetermined amplitude along the vibration direction MV. Can be done.
  • the inner surfaces of the leaf springs 32A and 32B are covered with expansion and contraction measuring elements 127A and 127B, respectively, each composed of a strain gauge.
  • the projection system PL can be vibrated with high accuracy.
  • a laser interferometer or the like may be used to monitor the displacement of the lens barrel 31.
  • the projection system PL can be stably displaced along the vibration direction MV by a desired amount with high accuracy and stopped.
  • the projection system PL was moved along the Y direction by expanding and contracting the drive elements 111A to 111D and 112A to 112D to deflect the leaf springs 32A and 32B in the Y direction.
  • Vibration direction Predetermined vibration at predetermined frequency in MV Vibrate by width.
  • the width L1 is, for example, about 10 to 30 times the width d of the sub-exposure area 54, but for simplicity in FIG. 7, the width L1 is set to 9 times the width d. I have.
  • FIG. 10 shows a state in which the projection system PL is vibrated in the Y direction.
  • the optical axis AX 2 of the projection system P is compared with the optical axis AX 1 of the illumination system.
  • the reduced image of the character pattern 15 B on the mask M by the projection system PL is exposed on the sub-exposure area 54 A on the wafer W.
  • the projection system PL is moved in the direction MVA ( + Y direction) by ⁇ .
  • the projection system PL of this example is an inverted projection system composed of the front group 27 and the rear group 29, the projection image / 3 (] 3 ⁇ 1) and the + Y direction of the reduced image are used.
  • the displacement amount ⁇ 1 is as follows.
  • ⁇ 1 (1 + ⁇ ) ⁇ ⁇ ⁇ (1)
  • the character is added to the sub-exposure area 54B adjacent to the sub-exposure area 54A on the wafer W. A reduced image of the pattern 15 C can be exposed.
  • a reduced image of the character pattern 15A on the mask M is exposed on the sub-exposure area 54C adjacent to the sub-exposure area 54B on the wafer W.
  • the displacement of the reduced image due to the displacement ⁇ y2 of the projection system PL in the direction MVA with the electron beam EB transmitted through the character pattern 15 A turned back onto the optical axis AX1 ( (1 + 3) ⁇ y 2) Should be 2 ⁇ d.
  • the time points at which the displacement of the reduced image by the projection system PL becomes 0, ⁇ Y1, ⁇ Y2 are t1, t2, Assuming that the minimum value of the interval between t 3 and time points tl, t 2, and t 3 is ⁇ , when the sensitivity of the electron beam resist on the wafer W is high (the required exposure amount is small), it is almost at the time point tl.
  • the deflector 3 for blanking shown in FIG. 1 is deactivated for the exposure time ⁇ t 1 (where m 1 is considerably shorter than the spacing plate) around t, t 2, and t 3.
  • a reduced image of one character pattern corresponding to each of the different sub-exposure areas 54A, 54B, and 54C on the wafer W can be exposed.
  • the output of the electron gun 1 in FIG. 1 that is, the intensity of the electron beam EB is controlled according to the sensitivity. You may do so. That is, when the sensitivity of the electron beam resist is slightly low (appropriate exposure amount is slightly large), the intensity of the electron beam EB is increased, and when the sensitivity of the electron beam resist is slightly high (appropriate exposure amount is slightly small), the electron beam is increased. The strength of the EB may be reduced.
  • This exposure amount control method is effective when the intensity of the electron beam EB can be controlled accurately and stably within a predetermined range, and thus the exposure amount can be easily controlled.
  • the exposure time 2 around the time points t1, t2, and t3 is the interval Shorter than ⁇ , but may approach the interval ⁇ .
  • the reduced image on the wafer W moves in the Y direction, and is transferred to the sub-exposure areas 54A to 54C. Image resolution may be degraded.
  • the projection system PL is moving in the Y direction, the reduced images on the wafer W are stopped on the respective sub-exposure areas 54A to 54C, so that an electronic P 04707
  • the optical axis of the projection system PL is electronically displaced by applying the MOL method.
  • the optical axis in the initial state of the projection system PL (before the optical axis is displaced by the electronic MOL method) is set to the optical axis AX2, and after being displaced by the electronic MOL method.
  • the optical axis is called the optical axis AX3 (see Fig. 11).
  • the displacement between the optical axis AX2 and the center of the sub-exposure area 54 (exposure target area) is ⁇ 5Ya
  • the displacement of the optical axis AX3 by the electronic M ⁇ L method 6 y can be expressed by the following equation.
  • the displacement of the optical axis AX3 with respect to the optical axis AX2 is gradually reduced, and in FIG. 11B showing the state at the time point t2, the optical axis AX3 is matched with the optical axis AX2.
  • the front group 27 and the rear group 27 are formed by an electronic MOL method as shown in Fig. 11 (C).
  • the electromagnetic field (optical axis AX3) of group 29 is displaced in one Y direction with respect to the initial state (optical axis AX2) indicated by dotted lines 27B and 29B.
  • the reduced image moves from the dotted locus 1 17 B to the solid locus, The reduced image is transferred to the sub-exposure area 54B.
  • the optical axis AX3 determined by the electromagnetic field distribution of the projection system PL is displaced by the electronic M ⁇ L method at the exposure time ⁇ t2 around each time point t1, t2, t3, ...
  • the reduced images of the corresponding character patterns are transferred with high resolution to the sub-exposure areas 54 A, 54 B, 54 C,... In a row along the mechanical vibration direction MV on the wafer W.
  • the mechanical oscillation frequency of the projection system PL is lowered to increase the interval T. You may.
  • the mechanical vibration frequency of the projection system PL may be increased.
  • the exposure amount control may be performed by combining the control of the mechanical vibration frequency of the projection system PL and the control of the intensity of the electron beam EB.
  • the position of the reduced image on the wafer W is also corrected in the X direction by an electronic MOL method as described later.
  • the projection system PL is oscillated in the Y direction by the mechanical MOL method, and the position of the reduced image 43 is corrected by the electronic MOL method, thereby obtaining the width in the Y direction.
  • a reduced image of the character pattern corresponding to the sub-exposure area 54 having a width d of one row arranged in the Y direction in the main exposure area 11 1 OA of L1 can be transferred.
  • the projection system PL is synchronized with the oscillation operation in the Y direction in the Y direction.
  • the wafer W is continuously moved at a predetermined speed in the + X direction orthogonal to the Y direction. That is, the wafer W is scanned in the + X direction relative to the projection system PL. Therefore, the scanning direction MSA of the wafer W is in the + X direction, and the scanning direction MSA is orthogonal to the mechanical vibration direction MV of the projection system PL.
  • the frequency at which the projection system PL is vibrated along the vibration direction MV Is M0L and the period is T OL —— ⁇ ⁇ / ⁇ MOL).
  • T OL the frequency at which the projection system PL is vibrated along the vibration direction MV Is M0L and the period
  • T OL the frequency at which the projection system PL is vibrated along the vibration direction MV Is M0L and the period
  • two rows of sub-exposure areas 54 are exposed during one period T MOL. It is necessary to move the wafer W along the scanning direction MSA by 2 ⁇ d which is twice the width of the sub-exposure area 54. Accordingly, the scanning speed Vw in the running direction MSA of Jehwa W is as follows.
  • the wafer W is moved stepwise in the Y direction by an interval L1, and then synchronized with the mechanical MOL method of oscillating the projection system PL in the Y direction. Then, by moving the wafer W in the ⁇ X direction, the reduced images of the corresponding character patterns are sequentially exposed in the adjacent main exposure area 110B.
  • the image of the target circuit pattern is transferred onto the entire surface of the shot area 52 by sequentially exposing the adjacent main exposure areas 110C,... While reversing the scanning direction of the wafer W. There is a monkey.
  • the width d of the sub-exposure area 54 on the bottom surface is about 50 m. Furthermore, if the width L 1 of the main exposure area 11 OA in the Y direction is 20 times the width .d of the sub-exposure area 54, the width L 1 is about 2 mm ( ⁇ lmm). Therefore, using equation (1), the minimum value of the amplitude when the projection system PL is vibrated in the Y direction by the mechanical MOL method is approximately L IZ (1 +) 3), that is, approximately 1.82 mm. .
  • the width of the effective visual field on the object plane side of the projection system PL only needs to be approximately (D + L1Z (1 + ⁇ )) or more. That is, the effective visual field may be a circular area having a diameter of about 2.3 mm or more.
  • the amplitude of the projection system PL is set to about 1.2 to 1.6 times the minimum value, and is set within the range of the width L1 on the surface of the wafer. Only one character pattern reduction Small images may be transferred.
  • the frequency f MOL when the projection system PL is vibrated in the Y direction by a mechanical MOL method is, for example, about 40 to 60 Hz.
  • a vibration method at this time it is excellent in terms of stability to vibrate the projection system PL in a sinusoidal waveform with respect to time.
  • the projection system PL may be vibrated in a substantially triangular waveform with respect to time.
  • the scanning speed Vw of the wafer W in the + X direction is given by the following equation (4). SmmZs ec.
  • FIGS. 12 to 13 show an example of an operation of transferring a predetermined pattern to one shot area on a wafer by the character-to-pattern transfer method using the reduction transfer apparatus of FIG. 1 of the present embodiment. It will be described with reference to FIG.
  • FIG. 12 (A) shows an example of a pattern arrangement of a mask M to be exposed.
  • a character pattern 15 A to 1 A in a character pattern group 13 A on the mask M is shown.
  • Patterns represented by symbols A1 to Y1 are formed as 5Y, and symbols ⁇ 2,...,... , A3,... And ⁇ 4,... Are formed.
  • the electron beam irradiation area 14 is relatively moved along the trajectory 118 on the mask ⁇ , so that the reduced images of the patterns ⁇ 1, C1,...
  • the main exposure area 11 having a width L1 and a length L5 in the shot area 52 on the wafer W of FIG. 12 (B) 11 is sequentially transferred to the sub-exposure areas 54A, 54B, 54C,.
  • the projection system PL is vibrated in the vibration direction MV (Y direction) by the mechanical MOL method, and the reduced image 43 is vibrated.
  • the wafer W is scanned in the scanning direction MSA along the + X direction.
  • the vibration of the projection system PL is sinusoidal with respect to time at this time
  • the relative locus of the center of the reduced image 43 with respect to the main exposure area 110 A on the wafer W is shown in FIG.
  • the width L1 of the main exposure area 110A in the Y direction is 10 times the width d of the sub-exposure areas 54A, 54B,. I have.
  • the reduced image 43 by the projection system PL moves relative to the main exposure area 11 OA in a sinusoidal shape at a pitch 2
  • the Y coordinate of the center of the reduced image 43 matches the Y coordinate of the center of the sub-exposure areas 54A, 54B, 54C,..., 54U, respectively.
  • the reduced image 43 of the corresponding character pattern is exposed simply by irradiating an electron beam at the time points tl, t 2,..., the sub-exposure areas 54 ⁇ , 54 ⁇ ,... in the X direction
  • the position of the reduced image 43 is shifted.
  • the projection system PL is changed by changing the electromagnetic field of the electron optical system of the projection system P using the electronic MOL method in synchronization with the operation of oscillating the projection system PL in the ⁇ direction.
  • the optical axis (corresponding to the optical axis AX 3 in Fig. 11) is periodically displaced in the X direction (the direction orthogonal to the vibration direction), and the reduced image 43 is transferred as shown in Fig. 13 (B). Displace the position.
  • FIG. 13 (B) the position of the lens barrel 31 of the projection system PL at the time points t1, t5, t10, and til is shown corresponding to FIG. 13 (A).
  • the reduced image 43 is displaced in the X direction, and at the time t5, the reduced image 43 does not need to be displaced substantially, and at the time t10, the reduced image 43 needs to be displaced in the + X direction.
  • the contraction is performed to expose the sub-exposure area 54L adjacent in the X direction. It is necessary to displace small image 43 in one X direction.
  • the frequency of the vibration in the Y direction of the projection system P in the mechanical MOL method is equal to the frequency F M0L of the vibration of the reduced image 43 in the X direction in the electronic MOL method, but the electronic MOL In the movement of the reduced image 43 by the method, as shown in Fig.
  • the reduced image 43 when the projection system PL is located at the end, the reduced image 43 is almost instantaneously moved from the position 43B or from the position 43B. A must move in the X direction by width d in A.
  • the reduced image 43 due to the electronic MOL method, the reduced image 43 has a sawtooth-like waveform with respect to time at a frequency of 2 • f MOL with almost the amplitude d in the X direction (direction perpendicular to the mechanical vibration direction of the projection system PL). It will vibrate.
  • the mechanical MOL vibration of the projection system PL and the electronic MOL vibration are combined, the reduced image 43 follows an approximately “8-shaped” locus on the image plane (wafer W). To move.
  • the projection system PL in the Y direction by the mechanical MOL method, the scanning of the main exposure area 11 OA on the wafer W in the X direction, and the X direction of the reduced image 43 by the electronic MOL method When the displacement is performed in synchronization with the main exposure area 11 OA, the relative locus of the center of the reduced image 43 with respect to the main exposure area 11 OA is
  • the center of 43 is in the center of the sub-exposure area 54 A, 54 B, 54 C,..., 54U Agree.
  • the reduced images of the corresponding character patterns can be exposed in the sub-exposure areas 54 ⁇ to 54U.
  • the transfer position of the reduced image 43 is also corrected in the Y direction by the electronic MOL method during the exposure time ⁇ t 2 around the time points tl, t 2,. You can do it.
  • the projection system PL is vibrated in the Y direction in a triangular waveform with respect to time by the mechanical MOL method and the wafer W is scanned in the X direction, the main exposure area is not driven when the electronic MOL method is not driven.
  • the relative locus of the center of the reduced image 43 with respect to 11 OA has a triangular wave shape as shown by the solid line locus 122 in FIG.
  • the drive control of the electronic MOL method is easy.
  • the mask stage 20 moves the mask M stepwise.
  • the character stage pattern group 13 A, 13 B,... is selected by the step movement of the mask stage 20.
  • a character pattern to be transferred can be selected quickly and efficiently from a large number of characters and patterns.
  • the wafer stage 46 in FIG. By moving the wafer W in the X direction (ie, the scanning direction MSB of the adjacent main exposure area 110B) in synchronization with the operation of vibrating the PL in the Y direction, the main exposure area 110 Exposure to B is performed, and thereafter, the wafer W is scanned in the opposite scanning directions MSA, MSB, and MSA alternately for each of the adjacent main exposure areas 110C, 110D, and 110E. Finally, an image of a circuit pattern of a predetermined layer is transferred onto the entire surface of the shot area 52. Similarly, the same or another circuit pattern image is transferred to other shot areas on the wafer W, respectively. Subsequently, the circuit pattern of the layer is formed through a development process of a resist on the surface of the wafer W and a pattern formation process such as etching and ion implantation.
  • the width L1 in the Y direction of the main exposure areas 110A, 110B, ... is about 10 to 30 times the width of one sub-exposure area 54A, 54B, ... Therefore, for example, the throughput of the exposure process is greatly improved to about 10 to 30 times as compared with the case where the wafer W is mechanically scanned and exposed for each row of the sub-exposure areas 54.
  • the projection system PL is vibrated by the mechanical MOL method.
  • exposure can be performed by vibrating the reduced image 43 in the Y direction with the width d of one sub-exposure area by the electronic MOL method. Conceivable.
  • each time the wafer W is scanned once in the X direction it is possible to expose about two rows of sub-exposure areas.
  • the throughput is about 15 to about;
  • the projection system PL is vibrated by the mechanical MOL method, and at the time of scanning the wedge W, for example, the locus 11 1 of the center of the reduced image 43 in FIG.
  • the optical axis of the projection system PL is displaced by an electronic MOL method in order to align 9 with the center of a series of sub-exposure areas 54 A, 54 B, 54 C,.
  • An irradiation position correction deflector similar to the deflectors 7 and 25 is arranged between the projection system PL and the wafer W, and the position of the reduced image 43 is corrected by the irradiation position correction deflector. You may.
  • the position of the electron beam EB incident on the projection system PL may be displaced from the optical axis AX1 by, for example, a deflector 25 for rewinding.
  • the projection system PL is vibrated. For example, when a test pattern is transferred onto the wafer W, the corresponding patterns are sequentially shifted while gradually displacing the projection system PL in the Y direction. It may be transcribed. Further, in the above embodiment, the projection system PL is displaced or vibrated one-dimensionally. However, a support mechanism that supports the projection system PL so as to be freely displaceable in two directions orthogonal to a plane perpendicular to the optical axis is provided. The projection system PL may be displaced or vibrated two-dimensionally in the X direction and the Y direction.
  • a measurement system for example, a laser interferometer
  • a measurement system that can detect the position of the projection system PL in the X and Y directions and the rotation angle around three axes
  • four portions of the projection system PL may be supported by leaf springs, and these leaf springs may be vibrated by telescopic drive elements.
  • the actuator may be driven by an EI core type 3-axis or 4-axis actuator having an E-shaped electromagnet section and an I-shaped core section.
  • the position of the wafer stage 46 in FIG. 1 is measured with reference to the predetermined reference mirrors 22 RX and 22 RY, but the position of the wafer stage 46 is fixed to the projection system PL.
  • the position of wafer stage 46 may be controlled based on the difference between the measured value of the position of projection system PL and the measured value of the position of wafer stage 46, with reference to the reference mirror obtained as a reference.
  • a second embodiment of the present invention will be described with reference to FIG.
  • the present invention is applied to the case where the exposure is performed by the character-to-pattern transfer method.
  • the present invention is applied to the exposure by the split transfer method. This is applied when performing.
  • the exposure is performed by using the same electron beam reduction transfer device as the first embodiment in FIG.
  • FIG. 15 shows the mask Ml and the wafer W when performing the exposure by the division transfer method using the electron beam reduction transfer apparatus of FIG. 1, and as shown in FIG. 15 (A), the pattern of the mask M1 is shown.
  • the main fields of view 13A1, 13B1, 13C1, 13D1, ... are arranged at predetermined pitches in the X and Y directions, and each of the main fields of view 13A1, 13B1, ...
  • a pattern (a code A, B, C, D is shown) in which a predetermined circuit pattern is enlarged.
  • FIG. 15 (B) an image of a circuit pattern for one or more dies on the wafer W is formed.
  • the shot area 52A which is an area to be exposed, is divided into a plurality of main exposure areas 125 A to 125 F in the Y direction, and each main exposure area 125 A to 125 F
  • the exposure units 124 A, 124 B,... are divided in the X direction, and these exposure units 124 A, 124 B,... are each composed of 5 rows ⁇ 5 columns of sub-exposure areas 54 A 1.
  • a reduced image 43 of the original pattern in the corresponding sub-field of view 15 on the mask M1 is transferred to the sub-exposure area 54A1.
  • the mask Ml is placed on the mask stage 20 in FIG. 1, and the wafer W is placed on the wafer stage 46 in FIG. Then, by driving the mask stage 20 and the deflector 7 for selecting the field of view, in FIG. 15 (A), the irradiation area 14 of the electron beam EB is changed to the first sub-field of the main field of view 13 A1. , The second sub-field of view,..., And the 25th sub-field of view are sequentially moved, and each is irradiated with the electron beam EB for a predetermined exposure time.
  • the projection system PL is vibrated in the Y direction (mechanical vibration direction MV) by the mechanical MOL method, and the wafer W is moved in the + X direction (mechanical scanning direction MS A).
  • Fig. 15 (B) 5 lines X in the main exposure area 125A on wafer W are scanned by correcting the irradiation position of the reduced image using the electronic MOL method.
  • a reduced image of a circuit pattern represented by a symbol A is transferred to a first exposure unit 124A composed of five rows of sub-exposure areas 54A1.
  • the electron beam irradiation area 14 is regularly moved as the first sub-field of view, the second sub-field of the next main field of view 13 B 1 on the mask Ml, and so on.
  • the operation of oscillating the projection system PL in the Y direction by the mechanical MOL method and the operation of scanning the wafer W in the scanning direction MSA are performed as shown in Fig. 15 (B).
  • the second, third,... Exposed units 124 B, 124 C,... In the main exposure area 125 A are denoted by B, C,.
  • the reduced image of the circuit pattern represented by is transferred.
  • the wafer W is alternately moved in the opposite scanning direction MSB, MSA to the adjacent main exposure areas 125B, 125C,. Exposure is performed by the division transfer method by scanning in the order of.
  • the reduced image 43 (projection system PL) is vibrated in the Y direction by the mechanical M ⁇ L method, and each main exposure area 125 A , 125 B,... In the Y direction can be increased, thereby improving the throughput of the exposure process.
  • the number of divisions of the enlarged pattern in the main field of view 13 A 1, 13 B 1,... On the mask Ml and the corresponding exposed units 124 A, 124 B on the wafer W ... Have the same number of divisions in the sub-exposure area (5 rows x 5 columns), but the main field of view 13A1, 13B1,... , 124 B,... May be different from the number of divisions of the sub-exposure area.
  • an overlapping portion (joint portion) is provided at the boundary of the adjacent sub-exposure area 54A1 on the wafer W, and a reduced image of the adjacent original pattern is overlapped at the overlapping portion. Exposure may be performed together. This reduces splice errors.
  • a mask stage 20 is used. May be moved.
  • the mask stage 20 and the wafer stage 46 are used. It will be moved similarly.
  • the entire projection system PL is mechanically MOL-based.
  • some members of the projection system PL are mechanically displaced or vibrated.
  • FIG. 16 is a schematic diagram showing members from the mask M to the wafer W of the present example corresponding to FIG. 10 and, in FIG. 16 (A), the character pattern 15 on the mask M is shown.
  • the reduced image by the projection system PL of B is projected on the sub-exposure area 54A on the wafer W.
  • the projection system PL in this example also includes the front group 27 and the rear group 29.
  • the optical axis of the front group 27 is the optical axis AX2
  • the optical axis AX2 is the optical axis AX1 of the illumination system. Is matched.
  • the rear group 29 as a movable member is arranged so as to be able to displace and vibrate in a direction perpendicular to the optical axis AX2. That is, the sub lens barrel 126 holding the rear group 29 is held by, for example, the leaf springs 32A and 32B in FIG. 1, and the leaf springs 32A and 32B are displaced in the Y direction by the drive system 34 in FIG. And it can be vibrated.
  • the reduced image of the character pattern 15C can be transferred to the sub-exposure area 54B by matching the displacement ⁇ with the interval (d) between the sub-exposure areas 54 ° and 54 °.
  • the front group 27 is used as a movable member. It is also possible. However, if the projection system PL is a reduction system and the projection magnification 3. (/ 3 ⁇ 1) is used, the displacement AYF of the reduced image with respect to the displacement Ay F of the front group 27 is as follows.
  • the entire projection system PL is displaced or vibrated by the mechanical MOL method, but in the fourth embodiment, the displacement of the center of gravity during displacement or vibration is prevented.
  • the council components for the balance of the evening and evening are provided.
  • FIG. 17 shows a mechanical drive system of the projection system PL of the present example corresponding to FIG. 7.
  • the projection system PL is housed in the lens barrel 31 and the lens barrel 3 1 Are held so as to be sandwiched in the Y direction by two pairs of leaf springs 32A, 328, and 32 (:, 32D. Both ends of the leaf springs 32A to 32D in the X direction are supported by supporting members 57A1, 57B1.
  • a ring-shaped balance member 128 is arranged so as to surround the center of the lens barrel 31 in a non-contact state, and the balance member 128 is also moved in the Y direction by a pair of leaf springs 32E and 32F.
  • both ends of the leaf springs 32E and 32F in the X direction are also fixed to the support members 57A1 and 57B 1. Therefore, the projection system PL and the balance member 128 are formed by the leaf springs. It is supported so that it can perform relative displacement and relative vibration in the Y direction via 32 A to 32 F.
  • the projection system PL and the lens barrel 3 1, and the weight of the member including the leaf springs 32A to 32D is substantially equal to the weight of the member including the balance member (counterhead) 128 and the leaf springs 32E and 32F.
  • the displacement amount of the lens barrel 31 (projection system PL) in the Y direction is determined by the movable mirror 40 fixed to one Y-direction side surface of the lens barrel 31 (leaf spring 32A) and the laser interferometer 41.
  • a rotation angle around the Z axis and a rotation angle around the X axis are measured at a predetermined sampling rate, and a movable mirror 40 G fixed to a side surface in the Y direction of the balance member 128 (leaf spring 32 E);
  • the laser interferometer 41G With the laser interferometer 41G, the displacement amount of the balance member 128 in the Y direction, the rotation angle around the Z axis, and the rotation angle around the X axis are measured at a predetermined sampling rate.
  • the balance member 128 when the projection system PL is vibrated in the Y direction (mechanical vibration direction MV) based on these measured values, the balance member 128 is moved in the Y direction with the same amplitude and the opposite phase. Vibrate along. In other words, when the projection system PL is displaced by ⁇ YG1 in the + Y direction, the balance member 128 is displaced by AYG1 along the opposite Y direction.
  • the movable member the projection system PL itself in this example
  • the balance member (counter-mass) 128 while substantially satisfying the law of conservation of momentum.
  • the projection system PL can be vibrated and displaced stably, and the accuracy of the transfer position on the wafer, etc. Is improved.
  • Fig. 18 shows an example of the mechanical drive member of Fig. 17.
  • the leaf spring 32A that holds the lens barrel 31 can be extended and contracted on the surface in the Y direction.
  • the drive elements 11 A and 11 B are fixed, and the drive elements 11 C and 11 ID are also fixed to the + Y direction surface of the leaf spring 32A.
  • the driving elements are also provided in the leaf spring 32B and the leaf springs 32C and 32D in FIG. Fixed.
  • the extensible drive elements 12 9 A and 12 9 B are also fixed to the surface of the leaf spring 3 2 E holding the balance member 1 2 8 in the —Y direction, and the + Y direction of the leaf spring 3 2 E is fixed.
  • the expandable and contractible drive elements 129 / C and 1 / 29D are also fixed to the surface of each.
  • a driving element is similarly fixed to the leaf spring 32F.
  • the leaf springs 32A and 32B are bent in the vibration direction MV along the Y direction by controlling the amount of expansion and contraction of the drive elements. By bending the leaf springs 32E and 32F in the opposite vibration direction MG by the same amount, the position of the center of gravity G of the mechanical system including the projection system PL and the balance member 128 does not change.
  • a voice filter In the embodiment shown in FIG. 17 as well, a voice filter, an EI core type actuator, a linear motor, etc. may be used as the mechanical drive system.
  • a predetermined width for example, After the reduced image of each sub-region of the mask is transferred to the region of L 1
  • the wafer W is transferred to the region on the wafer W adjacent to the region in the Y direction to transfer the reduced image of each sub-region to Y.
  • the velocity components of the wafer stage 46 in the X direction and the Y direction are not simultaneously set to 0, that is, the wafer W sequentially follows the U-shaped and inverted U-shaped trajectories. It is desirable to move the wafer so that it moves. By driving the wafer stage 46 in this way, it is possible to improve the throughput and reduce the vibration.
  • the mask stage 20 when the mask stage 20 is moved in order to move the irradiation area of the electron beam between the main visual fields of the mask M1, the mask stage 20 is also substantially moved. So that the velocity components of the mask stage 20 in the X and Y directions do not become 0 at the same time. By doing so, it is possible to improve the throughput and reduce the vibration.
  • the rotation amount of the projection system PL around the X axis and the rotation amount around the Y axis are respectively measured by the measurement system including the laser interferometer 41 shown in FIG. 17, for example. It is desirable to measure constantly and continuously correct the relative positional relationship between the electron beam from the projection system PL and the wafer W based on the measurement result.
  • the rotation amount of the projection system PL about the Z axis may be measured during the scanning exposure, and at least one of the mask and the wafer may be rotated based on the measurement result.
  • the projection system PL has one axis, but in FIG. 1, a plurality of projection systems PL that can be driven by a mechanical MOL method are arranged at variable intervals in the Y direction. Is also good.
  • a control mechanism that adjusts the interval between the projection axes PL of the plurality of axes to be, for example, an integral multiple of the pitch of the shot array on the wafer to be exposed is provided.
  • the offset of the electron beam irradiation position of each projection system PL is input so as to cancel the difference (residual error), and exposure is performed in parallel using the projection systems PL using the same control system. This further improves the throughput.
  • a large fiducial mark member may be used to measure the distance between the exposure centers of the multi-axis projection system PL, and one fiducial mark may be used relative to the plurality of projection systems PL. You may move.
  • a part of the movable members of the projection system is driven by the mechanical MOL method.
  • a movable stage (hereinafter referred to as a “MOL stage”) is provided, and a plurality of movable members of the projection system are installed on the MOL stage so as to be drivable, and these movable members are moved according to the pitch of the shot arrangement on the wafer. The distance between the members may be adjusted.
  • a plurality of movable members can be displaced or vibrated in parallel using one MOL stage, so that the mechanism of the drive system can be simplified.
  • the shape of the electron beam on the wafer stage 46 and the mechanical MOL method are used.
  • the first part that generates a secondary electron beam by irradiating the electron beam onto the wafer stage 46 and the second part that does not generate a secondary electron beam Reference marks provided with the portions may be formed at predetermined intervals.
  • the output of the secondary electron beam when the electron beam is displaced by the mechanical M ⁇ L method is detected, and for example, the output is differentiated with respect to the position of the electron beam (differential calculation in the case of a digital signal). From the obtained signals, the position and shape of the electron beam can be calibrated.
  • a magnetic field exists near the mask stage or the wafer stage, the magnetic field may bend the electron beam and deteriorate the transfer accuracy. Therefore, for example, a reference plate for detecting the deflection error of the electron beam according to the magnetic field strength is installed on the wafer stage, and the deflection error of the electron beam is detected.
  • the speed at which the electron beam is vibrated by the MOL method, the position of the wafer stage, and the like may be controlled based on a predetermined table.
  • FIG. 19 shows an example of a semiconductor device manufacturing process.
  • a semiconductor device when manufacturing a semiconductor device, first, for example, a single crystal silicon ingot is sliced and polished to manufacture a wafer W. I do. At this time, a notch (notch or the like) serving as a reference for wafer alignment is provided on the outer periphery of the wafer W. In the next step ST1, for example, a metal film or an insulating film is deposited on the wafer W, and an electron beam resist is applied.
  • the reduced images of the patterns are sequentially joined and transferred into one shot area (area where a circuit pattern for one or a plurality of dies is transferred) 52 on the wafer W.
  • the reduced images of many character patterns are sequentially transferred to other shot areas 52 on the wafer W in the same manner.
  • the projection system PL is vibrated using a mechanical MOL method, the throughput of the exposure process is extremely high.
  • a pattern F is formed in each shot region 52 on the wafer W by performing development, etching (or ion implantation), and the like.
  • step ST4 When exposing the next layer, first, in step ST4, for example, a metal film or an insulating film is deposited on the wafer W and an electron beam resist is applied.
  • step ST5 the electron beam shown in FIG.
  • reduced images of a number of character patterns selected from the mask M in the character pattern transfer method from the mask M in a different order from step ST2 are sequentially placed in one shot area 52 on the wafer W. Transcribe.
  • reduced images of a large number of character patterns are sequentially transferred to other shot areas 52 on the wafer W.
  • the throughput of the exposure process is extremely high because the projection system PL is vibrated by using the mechanical MOL method.
  • step ST6 a pattern G is formed in each shot region 52 on the wafer W by performing development, etching, and the like.
  • step ST7 The above-described electron beam resist coating process to pattern forming process (steps ST1 to ST3 or steps ST4 to ST6) are repeated as many times as necessary to manufacture a desired semiconductor device (step ST7). Then, a semiconductor device SP as a product is manufactured through a dicing step (step ST8) for separating each chip CP on the wafer W (step ST8), a bonding step, a packaging step, and the like (step ST9).
  • a dicing step step ST8 for separating each chip CP on the wafer W (step ST8), a bonding step, a packaging step, and the like.
  • the throughput of the exposure step using the electron beam transfer device is extremely high, a high-performance device can be produced with a high throughput as a whole.
  • a mechanical M ⁇ L method is used when manufacturing a semiconductor device.
  • other devices such as an image pickup device (CCD, etc.), a liquid crystal display device, a plasma display, etc.
  • the present invention can also be applied to the manufacture of devices, thin-film magnetic heads, micro machines, and the like. Further, the present invention is also applicable to the production of photomasks (reticles) for optical projection exposure apparatuses or other X-ray exposure apparatuses (including EUV exposure apparatuses), masks for electron beam transfer apparatuses, and the like. Can be applied.
  • a pattern obtained by enlarging an original pattern is drawn on a glass substrate by the exposure method of the above-described embodiment, and development and etching are performed. Manufacture reticles. Then, as a second step, the pattern of the master reticle may be transferred onto a glass substrate for a working reticle using an optical projection exposure apparatus.
  • a wafer as a mask substrate is formed using the exposure method of the above embodiment. Then, a predetermined original pattern may be transferred.
  • the electron beam reduction transfer apparatus as the exposure apparatus of the above-described embodiment includes an illumination system composed of a plurality of electron lenses and deflectors, and a projection system as a movable member incorporated in the transfer apparatus main body. Manufacturing, by performing symmetrical adjustments, attaching a reticle stage or wafer stage consisting of many mechanical parts to the transfer device body, connecting wiring and piping, and performing comprehensive adjustments (electrical adjustment, operation confirmation, etc.) can do. It is desirable to manufacture the transfer device in a clean room where the temperature and cleanliness are controlled.
  • the exposure is performed by the character-pattern transfer method or the split transfer method.
  • the present invention also includes an electron beam transfer device using a variable shaped beam or a Gaussian beam type electron beam. It goes without saying that the present invention can be applied to a transfer device and the like.
  • the electron gun 1 is used in a low-acceleration system, but in addition to this, the electron gun is moderately accelerated (acceleration voltage of about 15 kV to 30 kV) or high.
  • acceleration is about 50 kV to about 100 kV).
  • an electron beam is used as a charged particle beam
  • the present invention can also be applied to a charged particle beam transfer device using an ion beam or the like as a charged particle beam.
  • the projection system can be displaced by the mechanical MOL method, the projection system can be formed on the object (exposure target) without increasing the size of the projection system. This has the advantage that the pattern can be transferred to a wide area.
  • the projection system can be vibrated by the mechanical MOL method, there is an advantage that the throughput when performing exposure on an object to be exposed can be increased. is there.
  • the transfer speed can be increased, so that the throughput can be increased.
  • such an exposure method can be performed. Further, according to the device manufacturing method of the present invention, a high-performance device can be manufactured with high throughput.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

On décrit un procédé et un dispositif d'exposition qui permettent d'augmenter le rendement au moment de l'exposition du fait qu'ils permettent à des motifs devant être transférés sur une surface étendue d'un objet d'être exposés sans augmenter sensiblement la taille d'un système de projection. Des faisceaux d'électrons (FE) envoyés par un canon électronique (1) sont réfléchis sur des motifs de caractère recevant le transfert situés sur un masque (M) via un déflecteur (7) sélectionnant le champ de vision, les faisceaux d'électrons ayant traversé les motifs de caractère étant défléchis et renvoyés par un déflecteur (25) puis appliqués sur une tranche (T) via un système de projection (PL). Ce système de projection (PL) est supporté de manière à pouvoir être déplacé par un système d'entraînement (34) dans un sens perpendiculaire à un axe optique et ledit système de projection (PL) est mécaniquement déplacé ou soumis à des vibrations lorsque les images réduites des motifs de caractère correspondant à une pluralité de positions sur la tanche (T) sont sur le point d'être transférées.
PCT/JP2000/004707 1999-07-19 2000-07-13 Procede d'exposition et dispositif associe WO2001006549A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU60152/00A AU6015200A (en) 1999-07-19 2000-07-13 Exposure method and device therefor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20419599 1999-07-19
JP11/204195 1999-07-19

Publications (1)

Publication Number Publication Date
WO2001006549A1 true WO2001006549A1 (fr) 2001-01-25

Family

ID=16486417

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2000/004707 WO2001006549A1 (fr) 1999-07-19 2000-07-13 Procede d'exposition et dispositif associe

Country Status (3)

Country Link
AU (1) AU6015200A (fr)
TW (1) TW460933B (fr)
WO (1) WO2001006549A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008107955A1 (fr) * 2007-03-02 2008-09-12 Advantest Corporation Masque pour une exposition à faisceau électronique multicolonne, dispositif d'exposition à faisceau électronique et procédé d'exposition employant un masque pour une exposition à faisceau électronique multicolonne
US7501214B2 (en) 2003-10-21 2009-03-10 Kabushiki Kaisha Toshiba Semiconductor device fabrication method and fabrication apparatus using a stencil mask

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06151289A (ja) * 1992-10-30 1994-05-31 Nec Corp 磁界型電子レンズアライメント機構
JPH10255706A (ja) * 1997-03-14 1998-09-25 Nikon Corp 軸移動型電磁レンズの調整方法
JPH1126371A (ja) * 1997-07-08 1999-01-29 Nikon Corp 電子線転写装置
JP2000150367A (ja) * 1998-04-27 2000-05-30 Toshiba Corp 荷電ビ―ム描画装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06151289A (ja) * 1992-10-30 1994-05-31 Nec Corp 磁界型電子レンズアライメント機構
JPH10255706A (ja) * 1997-03-14 1998-09-25 Nikon Corp 軸移動型電磁レンズの調整方法
JPH1126371A (ja) * 1997-07-08 1999-01-29 Nikon Corp 電子線転写装置
JP2000150367A (ja) * 1998-04-27 2000-05-30 Toshiba Corp 荷電ビ―ム描画装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7501214B2 (en) 2003-10-21 2009-03-10 Kabushiki Kaisha Toshiba Semiconductor device fabrication method and fabrication apparatus using a stencil mask
US7977653B2 (en) 2003-10-21 2011-07-12 Kabushiki Kaisha Toshiba Semiconductor device fabrication method and fabrication apparatus using a stencil mask
WO2008107955A1 (fr) * 2007-03-02 2008-09-12 Advantest Corporation Masque pour une exposition à faisceau électronique multicolonne, dispositif d'exposition à faisceau électronique et procédé d'exposition employant un masque pour une exposition à faisceau électronique multicolonne
US8196067B2 (en) 2007-03-02 2012-06-05 Advantest Corp. Mask for multi-column electron beam exposure, and electron beam exposure apparatus and exposure method using the same
JP5175713B2 (ja) * 2007-03-02 2013-04-03 株式会社アドバンテスト マルチコラム電子ビーム露光用マスク、マルチコラム電子ビーム露光用マスクを用いた電子ビーム露光装置及び露光方法

Also Published As

Publication number Publication date
AU6015200A (en) 2001-02-05
TW460933B (en) 2001-10-21

Similar Documents

Publication Publication Date Title
KR101489521B1 (ko) 홀딩 장치, 노광 장치, 노광 방법 및, 디바이스 제조 방법
US6788385B2 (en) Stage device, exposure apparatus and method
US20080225261A1 (en) Exposure apparatus and device manufacturing method
TW574632B (en) Stage apparatus and exposure apparatus
US6836093B1 (en) Exposure method and apparatus
US6333572B1 (en) Article positioning apparatus and exposing apparatus having the article positioning apparatus
JP2004072076A (ja) 露光装置及びステージ装置、並びにデバイス製造方法
WO1999016113A1 (fr) Platine, dispositif d'alignement de balayage et procede d'exposition de balayage, et dispositif fabrique par ce moyen
US6583430B1 (en) Electron beam exposure method and apparatus
JP3862639B2 (ja) 露光装置
JP3993334B2 (ja) 荷電ビーム描画装置
JP4204964B2 (ja) リソグラフィ装置
JP2004055767A (ja) 電子ビーム露光装置及び半導体デバイスの製造方法
WO1999066543A1 (fr) Procedes et dispositif de detection de position et d'exposition, realisations et procedes de fabrication correspondants
WO2000065645A1 (fr) Dispositif a etages et dispositif d'exposition
US20020021428A1 (en) Charged-particle-beam microlithography stage including actuators for moving a reticle or substrate relative to the stage, and associated methods
US11276558B2 (en) Exposure apparatus and exposure method, lithography method, and device manufacturing method
JP2004158610A (ja) 露光装置および露光方法
WO2001006549A1 (fr) Procede d'exposition et dispositif associe
JP2004260116A (ja) ステージ装置、露光装置、及びデバイス製造方法
JPH10256355A (ja) 位置決めデバイス、基板保持装置、及び該装置を備えた露光装置
JP6855008B2 (ja) 露光装置、フラットパネルディスプレイの製造方法、デバイス製造方法、及び露光方法
JP6744588B2 (ja) 露光装置、フラットパネルディスプレイの製造方法、デバイス製造方法、及び露光方法
JP6575796B2 (ja) 露光装置、露光方法、フラットパネルディスプレイの製造方法、及びデバイス製造方法
JPH10321691A (ja) 基板搬送方法及び該方法を使用する露光装置

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
ENP Entry into the national phase

Ref country code: JP

Ref document number: 2001 511720

Kind code of ref document: A

Format of ref document f/p: F

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase