TW460933B

TW460933B - Exposure method and device therefor

Info

Publication number: TW460933B
Application number: TW89114308A
Authority: TW
Inventors: Nobutaka Magome; Motokatsu Imai; Yukio Kakizaki
Original assignee: Nippon Kogaku Kk
Priority date: 1999-07-19
Filing date: 2000-07-18
Publication date: 2001-10-21
Also published as: WO2001006549A1; AU6015200A

Abstract

The present invention provides an exposure method and device therefor, which can enhance a throughput at exposing by enabling patterns to be transferred onto a wide area on an object to be exposed without substantially upsizing a projection system. Electron beams (EB) shot from an electron gun (1) are shone on transfer-receiving character patterns on a mask (M) via a field-of-vision-selecting deflector (7). The electron beams passed through the character patterns are deflected back by a deflector (25) and then applied onto a wafer (W) via a projection system (PL). The projection system (PL) is supported so as to be displaceable by a drive system (34) in a direction perpendicular to an optical axis. The projection system (PL) is mechanically displaced or vibrated when the reduced images of character patterns respectively corresponding to a plurality of positions on the wafer (W) are to be transferred.

Description

4 6 0 9 3 3 A7 _ B7 五、發明說明（ί ) [技術領域] 本發明係關於在用以製造例如半導體元件、攝像元件 (CCD等）、液晶顯示元件 '電漿顯示元件、或薄膜磁頭等之裝置的微影步驟中，爲了將既定之圖案複製於晶圓等之基板上所使用曝光方法及裝置，特別是適合使用於透過電子束或離子束將光罩圖案或特性圖案等之各種圖案複製於基板上的帶電粒子線複製裝置者。 [習知技術] 近年來，對能一方面提升複製圖案之解像度，一方面又能提升生產性(through ;put)之帶電粒子線複製裝置的檢討不斷地在進行。過去，作爲此種複製裝置，係針對將相當於作爲感光性基板的一片晶圓上所形成之多數個積體電路( 半導體晶片等)一個份的一個小晶粒(die)份，或複數個小晶粒份之圖案，自光罩一次性地複製於對帶電粒子線感光、塗布有光阻劑晶圓上的一次性複製方式之裝置加以檢討。然而，就一次性複製方式而言，作爲複製原版之光罩的製作非常困難，且在相當於一個小晶粒份之大的光學區域內 ’將帶電粒子投影系（以下，簡稱爲「投影系」）之像差收納於既定範圍內是非常困難的。關於此，半導體元件等中晶圓等之基板上的一個小晶粒份之各層的電路圖案，例如複數種類之既定節距之等線寬圖案(line & space pattern)或既定形狀之配線圖案等預先設定之圖案(以下，稱爲「特性擺案(character pattern)」）之像’亦可藉組合複製加以形成。因此，預先在光罩上形成 3 (請先閱讀背面之注意事項再填寫本頁) 裝.— ----；_---訂----------線，經濟部智慧財產局員工消費合作社印製本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）經濟部智慧財產局員工消費合作社印製 I 4 6 0 9 3 〇 A7 _______ B7 五、發明說明（>) 多數種類的特性圖案，將自此等圖案中依序選擇之特性圖案的像’以既定之排列逐步複製於基板上的·「特性圖案複製方式」之帶電粒子線複製裝置的開發亦在進行中。又，爲了便於說明，將基板上各個複製一個小晶粒分之圖案像( 例如縮小像)的區域稱爲攝像區域。於該基板之表面以縱橫之既定節距分成多數之攝像區域。該特性圖案複製方式裝置，由於須將在光罩側依序選擇之特性圖案以既定之排列盡可能的高速地(高生產率)複於基板上之各攝像區域內，因此投影系之視野愈大愈好。然而，由於僅將投影系大型化則各個像差會變大，因此爲了使投影系不至過份的大型化而實質上使視野變廣，在例如文獻(E.Goto & T. Soma: Optik 48, No.3, 255-270(1977))中提出了一種使投影系內電磁場之分佈變化，以使投影系之電子光學系電子的於垂直光軸之方向位移的MOL(Moving Objective Lens) 〇又，將欲複製於基板之電路圖案分割爲教相當於一個晶粒之大小更小的複數個副視野，將各個視野之圖案的縮小像依序複製於基板上之「分割複製方式」的帶電粒子線複製裝置之開發亦在檢討中。該分割複製方式，爲了高速的將各副視野之圖案複製於基板上’投影系之視野亦是越大越佳。再者，將光罩上離開光軸位置之圖案(特性圖案或副視野之圖案)透過投影系加以複製時’爲了使像差變小，帶電粒子線亦盡量的以通過光軸之附近位置較佳’因此亦提出 4 I In i n n I I n I u ϋ )OJI I a^i n tn n I IV J (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） A7 460933 ___B7_._ 五、發明說明（，）有 MTP(Moving Trajectory Projection)方式之光學系。該 MTP方式，係在以偏向器將帶電粒子線軌道賓質上對齊於光軸之狀態下，以投影系進行縮小投影之方式。如上述般，以特性圖案複製方式、或分割複製方式將自光罩上依序選擇之圖案的縮小像複製於基板上之不同位置時，若係狹窄之區域亦可使用偏向器錯開帶電粒子線之位置。不過，由於僅以一個偏向器無法將對應之圖案的像依序複製於基板上一個較廣之攝像區域內的各個位置，因此以往係使用基板用的平台以機械方式移動該基板，來改變基上之像的複製位置；.此外，亦視需要使用基板側所設置之偏向器來進行該基板上之複製位置的修正。上述習知之帶電粒子線複製裝置中，爲了在基板上的一個攝像區域(一個小晶粒分之區域）內不同位置分別複製既定圖案之像，實質上係將基板用的平台機械性的驅動於 ——— ____________.... ——— — ———— 二維方向。此時’於基板上一個攝像區域內，若將以光罩上一個最小單位之圖案的像所曝光之最小被曝光區域稱爲「副曝光區域」的話，以往係重複下列動作，亦即先將基板用之平台移向第1方向，據以在該基板上大致一個副曝光區域份寬之細長的「主曝光區域」內將依序對應之圖案的像加以複製後，使該基板向直交於該第1方向之2方向歩進移動後，再將該基板移動於第1方向以在下一個主曝光區域內複製依序對應之圖案的像。因此’習知方式係於一個攝像區域進行曝光時，須使該基板用平台重複於該第1方向以進行多數次掃瞄，曝光 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐〉 n m ϊ i. i^i n n n -. n j m I tn n 一eJ_ I - - n n n 1— n n I f, n ....iV (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製經濟部智慧財產局員工消費合作社印製 4 6 0 9 3 3 a7 __.__B7____ 五、發明說明（屮）時間變長，曝光步驟之效率較低。關於此點，爲了增大投影系的視野，雖然可考慮僅使投影系大型化之方法，但不增大像差而使投影系大型化的話，亦有可能使製造成本大幅的增加。再者，由於帶電粒子線複製裝置之帶電粒子線的光路須爲真空，因此爲了使真空容器盡量的小型化以降低製造成本，最好是能使投影系盡量的小型化。又，習知之電子MOL方式，由於係使投影系內電磁場之分佈變化，在基板上自一個到二個副曝光區域份程度之寬度下能以低像差錯開ft影系之複製位置，因此使用此電子MOL方式使該基板平台掃瞄於該第1方向時，例如假設係於二個副曝光區域份之寬度的主曝光區域進行複製的話，能將效率改善2倍左右。然而，即使如此爲了於一個攝像區域之全體進行曝光，須多數次重複以該基板平台進行之掃瞄，因此過去皆希望有大幅度的改善生產率之技術的開發。本發明有鑑於上述各點，其第1目的，在提供一不至使投影系過份大型化，能將圖案複製於曝光對象物體(被曝光體)上廣大區域之曝光方法。又，本發明之第2目的，在提供一能提高對曝光對象物體進行曝光時之签_至的曝光方法。又，本發明之第3目的，在提供一將自光罩上依序選擇之小圖案的像複製於曝光對象物體上時，能提高效率之曝光方法。 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） ------------------η---訂----------線'、 (請先閱讀背面之注意事項再填寫本頁) A7 460933 ____B7__ 五、發明說明（f) 又，本發明之第4目的，在提供一能實施該種曝光方法之曝光裝置。又，本發明之第5目的，在提供一能使用該曝光方法以高效率製造高機能之元件的元件製造方法。 [發明內容] 本發明之第1曝光方法，係以帶電粒子線照射第1物體(M)，將經過該第1物體之圖案的帶電粒子線透過投影系 (PL)照射於第2物體(W)，其特徵在於：爲了在第2物體上不同之複數位置分別照射經過該第 1物體上之對應圖案的t電粒子線，係使該投影系中至少部份之可動構件(PL; 29)位移。根據上述之本發明，例如如第10圖所示，使投影系之至少部份的可動構件向垂直於該第2物體(W)之法線的方向、或垂直於照明系之光軸的方向位移Ayl、Δγ2時，於該第2物體上之複製位置即沿該位移方向分別移動ΔΥ1、△ Υ2。以下，將此種使投影系之至少部份的可動構件機械性位移之方式稱爲「機械性M〇L(Moving Objective Lens)方式」。藉使用此種機械性MOL方式，能不使投影系大型化，而在該第2物體上之不同的複數位置，亦即寬廣的區域上，以小的像差複製對應圖案之例如縮小像。此時，最好是能在實質上垂直於該投影系之光軸的平面內，更進一步的相對於投影系移動該第2物體。據此，能將既定之一組圖案複製於該第2物體上更爲寬廣之2次元區域。 7 紙張尺度適用¥國國家標f(CNS)A4規格（210 X 297公爱T ~ -------------t衣-----L---訂---------線ί (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 46093d _B7____ 五、發明說明（k ) 又，最好是能與移動該第2物體之動作或使可動構件位移之動作同步，使投影系內之電磁場電氣變化，以修正帶電粒子線在該第2物體上之照射位置。此係表示，針對本發明之機械性MOL方式，並用習知之電子MOL方式。例如，如第11圖所示的，當使投影系(PL)之至少一部份以機械性的朝向既定方向進行位移時，將構成投影系之電磁透鏡系之電磁場的分佈，自原本以虛線所示之位置(27A、 27B、29A、29B)變化至以實線所示之位置(27、29) ’即能將該第2物體(W)上之複製位置設定於相同之位置(54B)。因此，該第2物體上之複製位置的精度即獲得提升，重疊曝光時之重疊精度獲得提升。_ 又，最好是能預先在該第1物體上形成複數個相異之圖案，因應該第2物體上之照射位置，以將經過該第1物體上所選擇之圖案的帶電粒子線引導至投影系。此係因應將本發明之曝光方法適用於特性圖案複製方式或分割複製方式等之情形。又，最好是韩偵測可動構件之旋轉資訊，根據此旋轉資訊修正帶電粒子線在該第2物體上之照射位置。據此，在位移中即使可動構件旋轉，亦能正確的修正該第2物體上之複製位置。再者，作爲可動構件能向第1方向位移，該第2物體係向與第1方向大致直交之第2方向移動之構成’最好是能在第1方向將該第1物體之圖案複製於較可動構件之移動距離爲大之該第2物體上的區域。據此，能更進一步的提升效率。 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---'裝-----訂---------線—： ;ν... (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 4 6093 3 ______B7___ 五、發明說明（0 ) 其次，本發明之第2曝光方法，係以帶電粒子線照射第1物體(M)，將經過該第1物體圖案之帶電粒子線透過投影系(PL)照射於第2物體，其特徵在於：爲了在該第2物體上不同之複數位置分別照射經過該第1物體上之對應圖案的帶電粒子線，係使該投影系中至少部份之可動構件(PL ; 29)向既定方向振動。此第2曝光方法，由於係適用本發明之機械性MOL (Moving Objective Lens)使該投影系中至少部份之可動構件向既定方向振動，因此能使該第2物體上之圖案的複製位置沿該既定方向高速移動。此時，與用來定位該第2物體之平台相較，該投影系中至少部份之可動構件能相當地輕量化，因此能以大幅改善的效率進行對該第2物體上之曝光。此時，最好是能與使該可動構件沿第1方向(Y方向) 之振動同步，使該第2物體向與該第1方向交叉之第2方向(X方向)移動，於該第2物體上之2次元區域照射經過該第1物體上之對P圖案的帶電粒子線。藉由組合如上述般之機械性M0L方式之向該第1方向之振動，與該第2物體向該第2方向之機械性驅動，即能在例如曝光於該第2物體上之一個攝像區域(1個晶粒份之區域)時，減少將該第2 物體機械性的驅動於該第2方向之次數。因此，能提升曝光步驟之效率。此情形中，亦最好能與使該可動構件振動之動作同步，電氣性的變化該投影系內之電磁場以修正帶電粒子線在 9 紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) ~ " ~ -------------' 裝--------訂---------I (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 46093 3 A7 —___ B7 五、發明說明) 該第2物體上之照射位置。例如如第13圖(A)所示，若僅使該可動件向第1方向(Y方向)振動，以使該第2物體向該第2方向(X方向)移動的話，於該第2物體上之圖案的複製位置，即會如軌跡（119)所示般，自目標位置(54A、54B、 …)主要偏向該第2方向。因此，爲了修正該位置偏差量，藉組合電子MOL方式以將該圖案之複製位置主要修正向該第2方向，即能使該第2物體上之複製位置例如如第13圖 (D)之軌跡（121)所示般，沿目標之位置移動。再者，於例如第13圖(D)之軌跡(121)上之時點tl、t2 、…中，若假設複製位置分別達於目標位置(54A、54B、… )，則藉由在時點tl、t2、…僅進行極短時間之帶電粒子線之照射，即能複製該目標位置所對應之圖案。但，更正確的是，例如該第2物體上塗佈有感光材料時’須在該第2 物體上照射既定曝光時間之帶電粒子線。此時，爲了在例如以時點tl爲中心之曝光時間At之間’將複製位置維持於目標位置(54A)，須使用電子MOL方式在該第1方向亦進行複製位置之:修正。此時，亦可視該第2物體之感度控制該可動構件之振動頻率。若假設該帶電粒子線之強度一定’該第2物體之感度較低時，由於該曝光時間△〖變長’因此須降低該振動頻率。另一方面，若該第2物體之感度較高時，由於可使該曝光時間At短，因此可提高該振動頻率。相對於此，例如在能安定的進行帶電粒子線源之強度的控制時，最好是能視該第2物體之感度來控制帶電粒子_ 10 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ----l· I I I ^ 0 I--- 線' 經濟部智慧財產局員工消費合作杜印製經濟部智慧財產局員工消費合作社印製 460933 Α7 Β7 五、發明說明（1) 線之強度。此時，由於能使該可動構件之振動頻率一定，因此機械性驅動系之控制容易。又，最好是能在該可動構件上透過具有可撓性之構件連結平衡器（128) ’於振動該可動構件時，使包含該可動構件及該平衡器之機械系的重心位置(G)不至位移般，以和該可動構件之反相位振動該平衡器較佳。以此方式，能較胃安定的振動該可動構件，提升在該第2物體上之複製位置的精密度。再者，於本發明中，亦最好是能偵測該可動構件之旋轉資訊，根據此旋轉資訊修正該帶電粒子線在該第2物體上之照射位置ύ以此方式’即使在移位中該可動構件旋轉，亦能正確的修正該第2物體上之複製位置。其次，本發明之第1曝光裝置，係以靜電粒子線照射第1物體(Μ)，將經過該第1物體圖案之帶電粒子線透過投影系(PL)照射於第2物體，其特徵在於：爲了移動該帶電粒子線在該第2物體上之照射位置，設置有機械驅動枣（32Α、32Β、34)，以使該投影系中至少部份之可動構件移位。 .此時，最好是能設置第2物體用平台(46)，以在該投影系之光軸之實質上垂直的平面內，相對於該投影系移動該第2物體。又，爲了修正該帶電粒子線在該第2物體上之照射位置，最好是能設置使該投影系內之電磁場電氣性變化之電子驅動系(35)，與根據該第2物體用平台之動作及該機械 11 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） t表-----—訂---------< > (請先閱讀背面之注意事項再填寫本頁) A7 460933 _ ._._B7__ 五、發明說明（P) 驅動系之動作控制該電子驅動系之動作的控制系(33)。又，該第1物體上形成有複數個互異之圖案（15A、15B 、15C、…)時，最好是能設置使該第1物體在該投影系之光軸之實質上垂直的平面內移動的第1物體用平台(20)，與將該帶電粒子線照射於自該第1物體上所選擇之圖案的第1偏向器(7)，與將經過該第1物體上所選擇之圖案之帶電粒子線振回之第2偏向器(25)。根據此本發明之曝光裝置，能實施本發明之第1曝光方法。又，本發明之第2曝光裝置，係以帶電粒子線照射第 1物體(M)，將經過該第1物體圖案之帶電粒子線透過投影系(PL)照射於第2物體，其特徵在於：爲了移動該帶電粒子線在該第2物體上之照射位置，設置有機械驅動系（32A、32B、34)，以使該投影系中至少部份之可動構件振動。此時，該機械驅動系，係使該可動構件沿第1方向(γ 方向)振動者，爲了將經過該第1物體上對應圖案的帶電粒子線照射於該第2物體上之2次元區域，最好是能設置第 2物體用平台(46)，以使該第2物體向與該第1方向交叉之第2方向(X方向)移動。又，爲了移動該帶電粒子線在該第2物體上之照射位置，最好是能設置使該投影系內之電磁場電氣性變化之電子驅動系（35)，以和使該可動構件振動之動作及該第2物體用平台之移動動作同步的，透過該電子驅動系修正該帶 12 本紙張尺度適用中國國家標準（CNS)A4T規格（210 X 297公釐） I I---— — — — ------：- I I — 訂- - ------- -.fr , . { (請先閱讀背面之注意事項再«!寫本頁) ‘ 經濟部智慧財產局員工消費合作社印製 4 6093 3 a? B7 五、發明說明（a ) 電粒子線在該第2物體上之照射位置。該機械驅動系，作爲其一例，係具有：以包挾該可動構件之方式配置、分別具有可動性之第1及第2板彈簧構件C32A、32B)，支撐此板彈簧構件之支撐構件(57A、57B) ，以及將該可動構件驅動於該二片板彈簧構件所具有之可撓性方向之驅動構件（111A〜111D、112A〜112D)。又，該機械驅動系，最好是能具備有：以包圍該可動構件之方式配置之平衡器（128)，以相對位移自如之方式保持該可動構件與該平衡器之平衡器保持構件(32A〜32D、 32E、32F)，以及驅動該;平衡器之平衡器保持構件（111A、 111C、129A、129C);該機械驅動系，最好是能以和該可動構件之反相位振動該平衡器，使包含該可動構件及該平衡器之機械系的重心位置(G)實質上不至位移。根據此本發明之第2曝光裝置，能實施本發明之第2 曝光方法。此時，最好是能具備測量該可動構件位置之第1位置檢測器(40、41)，撣據此第1位置檢測器之檢測結果控制該機械驅動系之動作。據此，能提升該可動構件之控制精度，進而提升於該第2物體上之複製位置的控制精度。又，最好是能在將該第1物體及該第2物體搬入上述曝光裝置之路徑的至少一部份上，設置能將內部真空度與其他部份獨立的加以控制之預備室(67、69)。據此，由於能使該曝光裝置與例如交換該第1物體或第2物體之機構起動作，因此能提升效率。 13 (請先閱讀背面之注意事項再填寫本頁) 裝 l·—訂---------線· 經濟部智慧財產局員工消費合作社印製本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）經濟部智慧財產局員工消費合作社印製 4 6093 ^ a? _'___B7___ 五、發明說明（（1) 其次，本發明之曝光裝置之製造方法，係製造以帶電粒子線照射第1物體(M)，將經過該第1物體圖案之帶電粒子線透過投影系(PL)照射於第2.物體之曝光裝置，其特徵在於：爲了移動該帶電粒子線在該第2物體上之照射位置，係將該投影系之至少部份的可動構件(PL ; 29)以移位自如、或振動自如之狀態安裝於支撐構件(57A、57B),且安裝有使該可動構件位移或振動之機械驅動系(32A、32B、111A 、112A)者。根據此種製造方法，能有效率地製造本發明之曝光裝置。其次，本發明之元件製造方法，係包含使用上述本發明之曝光方法’將元件圖案複製於工件上之步驟者。根據此元件製造方法，能透過帶電粒子線，將極爲微細之圖案高精度的複製於晶圓等之基板、或光罩用之玻璃基板等之工件上。又’藉適用本發明之機械M〇l方式，能提升曝光時之效率。 [圖式之簡單說明] 第1圖係顯示本發明之第1實施形態之電子束縮小複製裝置之一部份爲截面圖的構成圖。第2圖中，（A)係線顯示第1圖之光罩Μ之圖案配置的俯視圖’（Β)係顯示第2圖(Α)之β部的擴大俯視圖，(C) 係顯示沿第2圖(Β)之CC線的截面圖。第3圖中，（Α)係顯示第1圖之晶圓W之圖案配置的俯視圖’（Β)係第3圖(Α)之Β部的擴大俯視圖。 I ^-----1---^---------^ .. (請先閱讀背面之注意事項再填'寫本頁) 14 4 60 93 3 A7 B7 五發明說明（ΐγ 第4圖顯示將第1圖之電子束縮小複製裝置收框架60 內之一部份爲截面圖之構成圖。第5圖係顯示第4圖之光罩平台20及與此關連之構件的部份切除俯視圖。第6圖係顯示第4圖之晶圓平台46及與此關連之構件的部份切除俯視圖。第7圖係顯示第1圖中之投影系PL之機械驅動系之 ‘例的擴大立#圖。 CA)〜經濟部智慧財產局員工消f:合作社印製 (請先閱讀背面之注意事項再填寫本頁) 裝 g 7圖之機械驅動系之動作的說明圖。顯示投影索PL之機械驅動系之另一例的部第8 第9 份切除俯赚第10 ，以使縮厂）第1^1$:第7圖中更進一步以電子MOL方式使投影系PL位移縮小像之位置變化時的說明圖。第於第1實施形態中以特性圖案複製方式進行圖 rrir 7圖中以機械MOL方式使投影系PL位移位置變化時的說明圖訂----- 線曝光時的» 第13 作中組合1 第14 p t)) :於第12圖之動作中，於機械MOL方式之動 MOL方式之動作時的說明圖。以機械MOL方式使投影系PL對時間振動成三角波<_^顯示在晶圓上之縮小像之軌跡的俯視圖。第[系於本發明之第2實施形態中以分割複製方式進行曝光說明圖。第於本發明之第3實施形態中以機械MOL方 15 本紙張尺度適用中國國家標準（CNS)A4規格（21〇χ 297公釐） 460933 經濟部智慧財產局員工消費合作社印製五、發明說明（/十）式使投影系PL之部份構件位移或振動時的說明圖。第17圖係顯示於本發明之第4實施形態中以平衡方式、且以機械方式使投影系PL位移或振動時時之驅動系的立體阈第18 說明圖。〇% 圖之驅縣之_元粒隨及動作的章人第19圖係顯示半導體元件之製造步驟之—例的圖。 [發明之最佳實施形態] 以下，參照第1.圖〜第14圖，說明本發明之較佳的第 1實施形態。本例係將未發明適用於以特性圖案複製方式將電子束作爲帶電粒子線之縮小複製裝置，亦即’適用於電子光束曝光裝置者。首先，第1圖係顯示作爲曝光裝置之本例的f子束縮小複製裝置之槪略構成圖，此第1圖中，自電子鎗1所射出之電子束EB，以聚光透鏡2成爲平行光束後，通過遮蔽用偏向器3之間射入形成有既定形狀(本例中爲正方形)開口之光圏板4。蟫製時通過光圏板4之開口、截面形狀被整形之電子束EB，經過由第1聚光透鏡6A及第2聚光透鏡6B所構成之聚光透鏡系5，再一次成爲平行光束後，以第1偏向器8A,及第2偏向器8B所構成之視野選擇用偏向畢7使其偏向2次元方向，導向作爲第1物體之光罩Μ上之一個特性圖案。照明系係由電子鎗1、聚光透鏡2、孔徑板4及聚光透鏡系5所構成，該照明系之光軸ΑΧ1係垂直於光罩Μ之圖 16 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I - - I I I I I I I .— ! r . I I--r--I ---------Y .' i\. (請先閱讀背面之注咅？事項再填寫本頁) 4 6093 3 Α7 Β7 五、發明說明（I f) 案面，本例中該圖案面大致與水平面一致。此時，作爲電子鎗1，可使用熱電子放射型之六硼化鑭(LaB〇、或鉬(Ta) 等。又，電子鎗1，作爲一例，係以加速電壓爲數100V〜 5kV程度之所謂的低加速方式加以使用。進一步的，電子束EB之光路，係設定在例如1(Γ7托(Torr)左右之高真空。然後，使遮蔽(Blanking)用偏轉器3動作，使電子束ΈΒ如虛線之光路11所示般自孔徑板4之開口脫離，即能任意的中斷對光罩Μ之電子束EB的照射。又，使用視野選擇用之偏轉器7，能在光罩Μ上自光軸ΑΧ1於X方向、或Υ方向離開若干程度之位置的一個特性圖案上，大致垂直的照射電子束ΕΒ。偏轉器3所進行的電子束ΕΒ之開關動作，以及偏轉器7之偏轉量，係由統一控制裝置全體之動作的主控制系10透過偏轉量設定部9加以控制。以下，將平行於該照明系之光軸ΑΧ1的方向設爲Ζ軸，垂直於Ζ軸之平面內與圖1之紙面垂直之方向設爲X軸，與圖1之紙面平行之方向設爲Υ軸來加以說明。通過光罩Μ ± —個特性圖案之電子束ΕΒ，藉由第1 偏向器26Α及第2偏向器26Β所構成之振回用偏向器25，再沿著該照明系之光軸ΑΧ1前_。偏向器25中電子束ΕΒ 之偏向量，係由主控制系10透過偏向量設定部36加以設定。偏向器8Α、8Β及偏向器26Α、26Β，係例如分別爲4 極之靜電偏向器，但亦可使用具備裝於鐵氧體製之芯內側之線圈的電磁偏向器加以取代。之後，電子束ΕΒ，透過由成像系構成之投影系PL， 17 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） (請先間讀背面之注意事項再填寫本頁)4 6 0 9 3 3 A7 _ B7 V. Description of the Invention (Technical Field) The present invention relates to the manufacture of semiconductor elements, imaging elements (CCD, etc.), liquid crystal display elements, plasma display elements, or thin films. In the lithography step of a device such as a magnetic head, in order to copy a predetermined pattern on a substrate such as a wafer, the exposure method and device are particularly suitable for using a photomask or a characteristic pattern through an electron beam or an ion beam. A charged particle beam copying device that reproduces various patterns on a substrate. [Known Technology] In recent years, the review of charged particle beam duplication devices that can improve the resolution of copied patterns on the one hand, and on the other hand, can improve productivity (through; put) has continued. In the past, such a copying device was directed to one small die or a plurality of die equivalent to one part of a plurality of integrated circuits (semiconductor wafers) formed on a wafer as a photosensitive substrate. The pattern of small crystal grains is copied from the photomask at one time to a device that is a one-time copy method for sensing the charged particle rays and coating it on a photoresist wafer. However, with regard to the one-time copy method, it is very difficult to make a mask as a copy of the original, and in a large optical area equivalent to a small grain size, the charged particle projection system (hereinafter referred to as the "projection system" ") It is very difficult to accommodate the aberrations within a predetermined range. In this regard, a circuit pattern of each layer of a small crystal grain on a substrate such as a semiconductor element or the like, such as a line & space pattern of a predetermined type or a wiring pattern of a predetermined shape An image 'such as a preset pattern (hereinafter, referred to as a "character pattern") can also be formed by combining and copying. Therefore, a 3 is formed on the photomask in advance (please read the precautions on the back before filling this page). Printed on the paper by the Consumers ’Cooperative of the Property Bureau. The paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm). Printed by the Consumers’ Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. (&Gt;) The development of charged particle beam copying devices of "characteristic pattern copying method" of "characteristic pattern copying method" in which a pattern of characteristic patterns sequentially selected from these patterns is gradually copied on a substrate in many types of characteristic patterns. Also in progress. In addition, for convenience of explanation, each region on the substrate in which a small-grain-division pattern image (for example, a reduced image) is copied is referred to as an imaging region. A plurality of imaging regions are divided on the surface of the substrate with a predetermined pitch of vertical and horizontal. In this characteristic pattern copying mode device, since the characteristic patterns sequentially selected on the photomask side must be placed in the predetermined arrangement as fast as possible (high productivity) in each imaging region on the substrate, the larger the field of view of the projection system The better. However, since the aberrations become larger only by increasing the size of the projection system, the field of view is substantially widened in order to prevent the projection system from becoming excessively large. For example, in the literature (E. Goto & T. Soma: Optik 48, No. 3, 255-270 (1977)) proposes a MOL (Moving Objective Lens) that changes the distribution of the electromagnetic field in the projection system so that the electrons in the projection system are displaced in the direction of the vertical optical axis. ) 〇 In addition, the circuit pattern to be copied on the substrate is divided into a plurality of secondary fields of view equivalent to a crystal grain with a smaller size, and the reduced images of the patterns in each field are sequentially copied on the substrate. The development of a charged particle beam replication device is also under review. In this division and copying method, in order to copy the pattern of each secondary field of view on the substrate at high speed, the field of view of the projection system is also larger and better. Furthermore, when the pattern (characteristic pattern or pattern of the secondary field of view) on the reticle from the position of the optical axis is copied through the projection system, 'in order to reduce the aberration, the charged particle beam is also passed as close as possible to the position near the optical axis. Jia 'therefore also proposed 4 I In inn II n I u ϋ) OJI I a ^ in tn n I IV J (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 public love) A7 460933 ___ B7 _._ 5. Description of the invention (,) Optical system with MTP (Moving Trajectory Projection) method. This MTP method is a method of reducing projection by a projection system in a state where the charged particle line orbital object is aligned on the optical axis with a deflector. As described above, when copying the reduced images of the pattern selected sequentially from the photomask to different positions on the substrate by the characteristic pattern copying method or the split copying method, if a narrow area is used, a deflector can also be used to stagger the charged particle lines. Its location. However, because the image of the corresponding pattern cannot be sequentially copied to various positions in a wide imaging area on the substrate with only one deflector, in the past, the substrate was used to move the substrate mechanically to change the base. Copy position of the above image; In addition, if necessary, use a deflector provided on the substrate side to correct the copy position on the substrate. In the conventional charged particle beam copying device described above, in order to copy images of a predetermined pattern at different positions in an imaging region (a region with a small crystal grain) on a substrate, the substrate platform for the substrate is mechanically driven to ——— ____________.... ——— — ———— Two-dimensional direction. At this time, if the smallest exposed area exposed by an image of the smallest unit pattern on the mask is called a "sub-exposure area" in an imaging area on the substrate, the following actions have been repeated in the past, that is, first The platform for the substrate is moved to the first direction, based on which the images of the corresponding patterns are sequentially copied in an elongated "main exposure area" that is approximately one sub exposure area wide, and the substrate is orthogonally intersected at After moving in two directions of the first direction, the substrate is further moved in the first direction to copy images of sequentially corresponding patterns in the next main exposure area. Therefore, when the conventional method is to perform exposure in an imaging area, the substrate platform must be repeated in the first direction to perform a plurality of scans, and the exposure 5 paper sizes are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm> nm ϊ i. I ^ innn-. Njm I tn n-eJ_ I--nnn 1— nn I f, n .... iV (Please read the notes on the back before filling this page) Ministry of Economy Printed by the Intellectual Property Bureau employee consumer cooperatives Printed by the Ministry of Economy Intellectual Property Bureau employee consumer cooperatives 4 6 0 9 3 3 a7 __.__ B7____ V. Description of the invention (屮) The time becomes longer and the efficiency of the exposure step is lower. Regarding this point, In order to increase the field of view of the projection system, although only a method of increasing the size of the projection system can be considered, if the projection system is enlarged without increasing the aberration, the manufacturing cost may be significantly increased. Furthermore, due to the charged particles The optical path of the charged particle beam of the line replication device must be vacuum, so in order to minimize the size of the vacuum container to reduce the manufacturing cost, it is best to minimize the size of the projection system. Also, the conventional electronic MOL method, because of the system The distribution of the electromagnetic field in the projection system can be used to shift the position of the ft film with low aberration in the width of the substrate from one to two sub-exposure regions. Therefore, the electronic MOL method is used to scan the substrate platform at In the first direction, for example, assuming that the main exposure area with the width of two sub-exposure areas is copied, the efficiency can be improved by about 2 times. However, in order to perform exposure on the entire imaging area, it is necessary to have a majority Scanning with the substrate platform is repeated twice, so in the past, it has been desired to develop a technology that greatly improves productivity. In view of the above points, the present invention has a first object to provide a projection system that does not make the projection system excessively large. And an exposure method capable of copying a pattern over a wide area on an exposure target object (exposed body). In addition, a second object of the present invention is to provide an exposure method that can improve the signing when an exposure target object is exposed. In addition, the third object of the present invention is to improve the efficiency when an image of a small pattern sequentially selected from a photomask is copied onto an exposure target object. Exposure method. 6 This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 public love) ------------------ η --- order --- ------- Line ', (Please read the precautions on the back before filling this page) A7 460933 ____B7__ V. Description of the invention (f) In addition, the fourth object of the present invention is to provide a way to implement such exposure Method exposure device. In addition, a fifth object of the present invention is to provide a device manufacturing method capable of manufacturing a high-performance element with high efficiency using the exposure method. [Summary of the Invention] The first exposure method of the present invention is charged. The particle beam irradiates the first object (M), and the charged particle beam passing through the pattern of the first object is irradiated to the second object (W) through the projection system (PL), which is characterized in that: for the second object to have a different plural number The positions respectively irradiate the t-electron beams passing through the corresponding pattern on the first object, so that at least a part of the movable member (PL; 29) in the projection system is displaced. According to the present invention described above, for example, as shown in FIG. 10, at least a part of the movable member of the projection system is oriented in a direction perpendicular to the normal line of the second object (W) or a direction perpendicular to the optical axis of the illumination system. When the displacement Ayl, Δγ2, the copy position on the second object is moved by ΔΥ1, ΔΥ2 along the displacement direction, respectively. Hereinafter, this method of mechanically displacing at least a part of the movable member of the projection system is referred to as a "moving objective lens" method. By using such a mechanical MOL method, the projection system can be reproduced with a small aberration, such as a reduced image at a small aberration, at a different complex position on the second object, that is, a wide area, without enlarging the projection system. In this case, it is preferable that the second object can be further moved relative to the projection system in a plane substantially perpendicular to the optical axis of the projection system. According to this, a predetermined set of patterns can be copied to a wider two-dimensional area on the second object. 7 Paper size applies to the national standard f (CNS) A4 size (210 X 297 public love T ~ ------------- t-shirt ----- L --- order --- ------ Line ί (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 46093d _B7____ 5. Description of the invention (k) It is better to be able to move with The movement of the second object or the movement of the movable member is synchronized, so that the electromagnetic field in the projection system is electrically changed to correct the irradiation position of the charged particle beam on the second object. This means that the mechanical MOL method for the present invention For example, as shown in Fig. 11, when at least a part of the projection system (PL) is mechanically displaced in a predetermined direction, the electromagnetic lens system constituting the projection system will be The distribution of the electromagnetic field is changed from the position (27A, 27B, 29A, 29B) originally shown by the dotted line to the position (27, 29) shown by the solid line, that is, the copy position on the second object (W) Set to the same position (54B). Therefore, the accuracy of the copy position on the second object is improved, and the overlap during overlap exposure The degree has been improved._ Also, it is better to form a plurality of different patterns on the first object in advance, according to the irradiation position on the second object, so that the electrification of the pattern selected on the first object will be charged. The particle line is guided to the projection system. This is because the exposure method of the present invention is applied to the characteristic pattern copying method or the division copying method. It is also preferable that Han detects the rotation information of the movable member and corrects the charging based on the rotation information. The irradiation position of the particle beam on the second object. According to this, even if the movable member rotates during the displacement, the replication position on the second object can be correctly corrected. Moreover, as a movable member, it can be displaced in the first direction, The configuration of the second object system moving in the second direction substantially orthogonal to the first direction is preferably that the pattern of the first object can be copied in the first direction to the second object whose moving distance is larger than that of the movable member. This area can further improve the efficiency. 8 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) --- 'Installation ----- Order ----- ---- line—:; ν ... (please Read the notes on the back and fill in this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 4 6093 3 ______B7___ V. Description of the Invention (0) Secondly, the second exposure method of the present invention is to irradiate the first particle with charged particle rays. The object (M) irradiates the second object through the projection system (PL) with the charged particle rays passing through the first object pattern, characterized in that: in order to illuminate the second object at different plural positions on the second object, The charged particle beams of the corresponding pattern above cause at least part of the movable members (PL; 29) in the projection system to vibrate in a predetermined direction. Since the second exposure method is a mechanical MOL (Moving Objective Lens) to which the present invention is applied, at least a part of the movable member in the projection system is vibrated in a predetermined direction, so that the copy position of the pattern on the second object can be shifted along The predetermined direction moves at high speed. At this time, compared with the platform used to locate the second object, at least a part of the movable members in the projection system can be considerably lightened, so that the exposure to the second object can be performed with greatly improved efficiency. At this time, it is preferable to be able to synchronize the vibration of the movable member in the first direction (Y direction) to move the second object in the second direction (X direction) that intersects the first direction, in the second direction The two-dimensional area on the object irradiates the charged particle rays passing through the pair of P patterns on the first object. By combining the vibration of the mechanical M0L method in the first direction as described above and the mechanical driving of the second object in the second direction, it is possible to, for example, expose an imaging area on the second object (In the area of one crystal grain portion), the number of times the second object is mechanically driven in the second direction is reduced. Therefore, the efficiency of the exposure step can be improved. In this case, it is also best to synchronize with the movement of the movable member to vibrate and change the electrical properties. The electromagnetic field in the projection system is used to correct the charged particle line. The 9 national paper standard (CNS) A4 (210 X 297) (Mm) ~ " ~ ------------- 'Outfit -------- Order --------- I (Please read the notes on the back first (Fill in this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 46093 3 A7 —___ B7 V. Description of the invention) The irradiation position on the second object. For example, as shown in FIG. 13 (A), if only the movable member is vibrated in the first direction (Y direction) to move the second object in the second direction (X direction), the second object is moved to the second object. As shown in the trace (119), the copy position of the above pattern is mainly deviated from the target position (54A, 54B, ...) to the second direction. Therefore, in order to correct the position deviation amount, by combining the electronic MOL method, the copy position of the pattern is mainly corrected to the second direction, that is, the copy position on the second object can be, for example, the trajectory of FIG. 13 (D). (121) moves along the position of the target as shown. Furthermore, in the time points t1, t2, ... on the trajectory (121) in FIG. 13 (D), for example, if it is assumed that the copy positions reach the target positions (54A, 54B, ...), respectively, t2, ... Only the irradiation of the charged particle beam for a short time can copy the pattern corresponding to the target position. However, it is more correct that, for example, when a photosensitive material is coated on the second object, it is necessary to irradiate the second object with a charged particle beam of a predetermined exposure time. At this time, in order to maintain the copy position at the target position (54A) between, for example, the exposure time At centered at the time point tl, the copy position must also be corrected in the first direction using the electronic MOL method. At this time, the vibration frequency of the movable member can also be controlled by the sensitivity of the second object. If it is assumed that the intensity of the charged particle beam is constant, 'the sensitivity of the second object is low, since the exposure time Δ becomes longer, the vibration frequency must be reduced. On the other hand, if the sensitivity of the second object is high, since the exposure time At can be made short, the vibration frequency can be increased. On the other hand, for example, when controlling the intensity of a charged particle beam source in a stable manner, it is best to control the charged particles depending on the sensitivity of the second object. 10 This paper is a Chinese standard (CNS) A4 specification ( 210 X 297 mm) (Please read the notes on the back before filling out this page) ---- l · III ^ 0 I --- Line 'Consumer Cooperation of Intellectual Property Bureau of the Ministry of Economic Affairs Du Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the employee consumer cooperative 460933 Α7 Β7 V. Description of the invention (1) The strength of the line. In this case, since the vibration frequency of the movable member can be made constant, the control of the mechanical drive system is easy. Further, it is preferable that the balancer (128) can be connected to the movable member through a flexible member. 'When the movable member is vibrated, the position of the center of gravity (G) of the mechanical system including the movable member and the balancer is set. It is not displacement, and it is better to vibrate the balancer in the opposite phase to the movable member. In this way, the movable member can be vibrated more securely in the stomach, and the accuracy of the copy position on the second object can be improved. Furthermore, in the present invention, it is also preferable to be able to detect the rotation information of the movable member, and correct the irradiation position of the charged particle line on the second object based on this rotation information. The movable member can also correctly correct the copy position on the second object by rotating. Next, the first exposure device of the present invention irradiates the first object (M) with electrostatic particle rays, and irradiates the charged particle rays passing through the first object pattern through the projection system (PL) onto the second object, which is characterized in that: In order to move the irradiation position of the charged particle beam on the second object, a mechanically driven date (32A, 32B, 34) is provided to displace at least a part of the movable member in the projection system. At this time, it is preferable that a second object platform (46) can be provided to move the second object relative to the projection system in a plane substantially perpendicular to the optical axis of the projection system. In addition, in order to correct the irradiation position of the charged particle beam on the second object, it is preferable to provide an electronic drive system (35) capable of electrically changing the electromagnetic field in the projection system, and an electronic drive system (35) based on the second object platform. Action and the machine 11 This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) t Table --------- Order --------- < > (Please read first Note on the back, please fill out this page again) A7 460933 _ ._._ B7__ V. Description of the invention (P) The control system (33) controls the operation of the electronic drive system. In addition, when a plurality of different patterns (15A, 15B, 15C, ...) are formed on the first object, it is preferable that the first object can be arranged in a plane substantially perpendicular to the optical axis of the projection system. The moving platform (20) for the first object, the first deflector (7) for irradiating the charged particle beam with a pattern selected from the first object, and the pattern selected for passing through the first object The second deflector (25) of the charged particle beam vibrates back. According to the exposure apparatus of the present invention, the first exposure method of the present invention can be carried out. The second exposure device of the present invention irradiates the first object (M) with the charged particle beam, and irradiates the second particle with the charged particle beam passing through the first object pattern through the projection system (PL), which is characterized in that: In order to move the irradiation position of the charged particle beam on the second object, a mechanical drive system (32A, 32B, 34) is provided to vibrate at least a part of the movable member in the projection system. At this time, the mechanical drive system is a person who vibrates the movable member in the first direction (γ direction), in order to irradiate the charged particle rays passing through the corresponding pattern on the first object to the second-dimensional region on the second object, Preferably, a second object platform (46) can be provided to move the second object in a second direction (X direction) crossing the first direction. In addition, in order to move the irradiation position of the charged particle beam on the second object, an electronic drive system (35) capable of electrically changing the electromagnetic field in the projection system is preferably provided to move the movable member. If the movement of the platform for the second object is synchronized, the electronic paper is used to amend the tape. The 12 paper sizes are applicable to the Chinese National Standard (CNS) A4T specification (210 X 297 mm). I I ------- ------ ：-II — Order--------- -.fr,. {(Please read the precautions on the back before «! Write this page) '' Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs Print 4 6093 3 a? B7 V. Description of the invention (a) Irradiation position of the electric particle beam on the second object. The mechanical drive system, as an example, includes first and second leaf spring members C32A and 32B which are arranged so as to enclose the movable member and have movability respectively, and a supporting member (57A) for supporting the leaf spring member. 57B), and a driving member (111A ~ 111D, 112A ~ 112D) that drives the movable member in the flexible direction of the two-plate spring member. The mechanical drive system may preferably include a balancer (128) arranged so as to surround the movable member, and a balancer holding member (32A) that holds the movable member and the balancer in a relatively displaceable manner. ~ 32D, 32E, 32F), and the balancer holding member (111A, 111C, 129A, 129C) of the balancer; the mechanical drive system is preferably capable of vibrating the balance in the opposite phase to the movable member Device so that the position of the center of gravity (G) of the mechanical system including the movable member and the balancer is not substantially displaced. According to the second exposure apparatus of the present invention, the second exposure method of the present invention can be implemented. At this time, it is preferable to include a first position detector (40, 41) for measuring the position of the movable member, and control the operation of the mechanical drive system based on the detection result of the first position detector. Accordingly, the control accuracy of the movable member can be improved, and the control accuracy of the copy position on the second object can be improved. Further, it is preferable that a preparation room (67, 67) capable of independently controlling the internal vacuum degree and other parts be provided on at least a part of a path for carrying the first object and the second object into the exposure device. 69). Accordingly, since the exposure device can be operated with a mechanism that exchanges the first object or the second object, for example, the efficiency can be improved. 13 (Please read the precautions on the reverse side before filling out this page) Assemble l · —Order --------- Line · Printed on the paper by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The paper size applies to Chinese National Standards (CNS) A4 specification (210 X 297 mm) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 6093 ^ a? _'___ B7___ V. Description of the invention ((1) Second, the manufacturing method of the exposure device of the present invention is manufactured by charging The particle line irradiates the first object (M), and the charged particle line passing through the first object pattern is irradiated to the second object through the projection system (PL), and is characterized in that: in order to move the charged particle line in the first 2 The irradiation position on the object is at least part of the movable member (PL; 29) of the projection system is mounted on the support member (57A, 57B) in a state of free displacement or vibration, and is installed to make the movable member The mechanical drive system (32A, 32B, 111A, 112A) of component displacement or vibration. According to this manufacturing method, the exposure device of the present invention can be efficiently manufactured. Second, the element manufacturing method of the present invention includes the use of the above-mentioned Invention exposure method Steps for copying element patterns on workpieces. According to this element manufacturing method, extremely fine patterns can be copied with high precision on substrates such as wafers or glass substrates for photomasks through charged particle beams. ... and 'the mechanical MoI method applicable to the present invention can improve the efficiency at the time of exposure. [Simplified description of the drawing] FIG. 1 shows a part of the electron beam reduction copying apparatus of the first embodiment of the present invention. FIG. 2 is a structural view of a cross-sectional view. In FIG. 2, (A) is a plan view showing a pattern arrangement of the photomask M in FIG. 1, and (B) is an enlarged plan view showing a β portion in FIG. 2 (A). C) is a cross-sectional view taken along line CC of FIG. 2 (B). FIG. 3 (A) is a plan view showing the pattern arrangement of the wafer W of FIG. 1 (B) is a view of FIG. 3 (Α ) The enlarged top view of Part B. I ^ ----- 1 --- ^ --------- ^ .. (Please read the notes on the back before filling in 'Write this page') 14 4 60 93 3 A7 B7 Fifth invention description (ΐγ Figure 4 shows the structure of a cross-sectional view of a part of the receiving frame 60 of the electron beam reduction and copying device of Figure 1. Figure 5 shows the fourth Fig. 6 is a partially cut-away top view of the mask platform 20 and related components. Fig. 6 is a partially cut-away top view of the wafer platform 46 and related components shown in Fig. 4. Fig. 7 shows the first The projection in the picture is an enlarged example of the example of the mechanical drive system of the PL. CA) ~ Printed by the staff of the Intellectual Property Bureau of the Ministry of Economic Affairs: printed by the cooperative (please read the precautions on the back before filling out this page). G 7 The illustration of the operation of the mechanical drive system in the figure. The 8th and 9th parts showing the other example of the mechanical drive system of the projection cable PL (10th cut to make the factory shrink) 1 ^ 1 $: Figure 7 An explanatory diagram when the position of the projection system PL displacement reduction image is further changed by the electronic MOL method. In the first embodiment, the figure is reproduced in a characteristic pattern copy mode. Rrir 7 In the figure, the mechanical MOL method is used to change the displacement position of the projection system PL. The drawing order is made at line exposure »» 13th in the combination 1 (14th pt)): In the operation of Fig. 12, it is an explanatory diagram when the operation of the mechanical MOL method is performed by the MOL method. A plan view of the track of the reduced image displayed on the wafer by the mechanical MOL method to make the projection system PL vibrate with time into a triangular wave. [This is an explanatory diagram of exposure performed by a division copy method in the second embodiment of the present invention. In the third embodiment of the present invention, the mechanical MOL side 15 is used. The paper size is applicable to the Chinese National Standard (CNS) A4 (21 × 297 mm). 460933 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (/ Ten) Explanation diagram when part of the projection system PL is displaced or vibrated. Fig. 17 is a three-dimensional illustration of the driving system's three-dimensional threshold when the projection system PL is mechanically displaced or vibrated in a balanced manner in the fourth embodiment of the present invention. 〇% Figure of the prefecture of the county _ Yuanren follow-up action Chapter 19 Figure 19 is a diagram showing an example of the manufacturing steps of semiconductor devices. [Best Embodiment of Invention] Hereinafter, a preferred first embodiment of the present invention will be described with reference to Figs. 1 to 14. This example applies the non-invention to a reduction and copying device that uses an electron beam as a charged particle beam in a characteristic pattern copying method, that is, it is suitable for an electron beam exposure device. First, FIG. 1 shows a schematic configuration diagram of an f-beam reduction and copying device as an example of the exposure device. In this first image, the electron beam EB emitted from the electron gun 1 is collimated by the condenser lens 2 After that, the light deflector 4 having a predetermined shape (a square shape in this example) is formed by entering between the deflectors 3 for shielding. When being fabricated, the electron beam EB that has been shaped through the opening and cross-sectional shape of the optical plate 4 passes through the condenser lens system 5 composed of the first condenser lens 6A and the second condenser lens 6B, and becomes a parallel beam again. With the field of view selected by the first deflector 8A and the second deflector 8B, the deflection angle 7 is used to make it deviate to the 2D direction to guide a characteristic pattern on the mask M as the first object. The lighting system is composed of an electron gun 1, a condenser lens 2, an aperture plate 4, and a condenser lens system 5. The optical axis AX1 of the lighting system is perpendicular to the photomask M. Figure 16 This paper applies Chinese National Standards (CNS) A4 specification (210 X 297 mm) I--IIIIIII .—! R. I I--r--I --------- Y. 'I \. (Please read the note on the back first? Please fill in this page again for matters) 4 6093 3 Α7 Β7 V. Description of the invention (I f) The case surface. In this example, the pattern surface is roughly consistent with the horizontal plane. At this time, as the electron gun 1, a thermoelectron-emitting lanthanum hexaboride (LaB0, molybdenum (Ta), etc.) can be used. In addition, the electron gun 1 is, for example, a so-called accelerating voltage of about 100V to 5kV. A low acceleration method is used. Further, the optical path of the electron beam EB is set to a high vacuum of, for example, 1 (To7 Torr). Then, the deflector 3 is used for blanking to make the electron beam ΈΒ as a dotted line. The light path 11 can be detached from the opening of the aperture plate 4 as shown in the optical path 11, and the irradiation of the electron beam EB of the photomask M can be arbitrarily interrupted. Furthermore, the deflector 7 for field selection can be used to free the optical axis on the photomask M Α1 irradiates the electron beam EB approximately perpendicularly on a characteristic pattern that is separated from the X direction or the Y direction by a certain degree. The switching operation of the electron beam EB by the deflector 3 and the deflection amount of the deflector 7 are determined by The main control system 10 that controls the overall operation of the control device is controlled by the deflection amount setting unit 9. Hereinafter, the direction parallel to the optical axis AX1 of the lighting system is set to the Z axis, and the plane perpendicular to the Z axis is the same as that in FIG. Vertically on paper It is the X-axis, and the direction parallel to the paper surface in FIG. 1 is set as the Y-axis for explanation. The mask M ±-an electron beam EB with a characteristic pattern is constituted by the first deflector 26A and the second deflector 26B. The deflector 25 for vibration return is further along the optical axis AX1 of the lighting system. The deflection vector of the electron beam EB in the deflector 25 is set by the main control system 10 through the deflection vector setting unit 36. The deflector 8A, 8B and deflectors 26A and 26B are, for example, 4-pole electrostatic deflectors, but they can also be replaced by electromagnetic deflectors with coils mounted inside the core of the ferrite system. After that, the electron beam EB is transmitted through the imaging The composition of the projection system is PL, 17 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public love) (Please read the precautions on the back before filling this page)

· I I Γ I I--訂 ί I I I 線經濟部智慧財產局員工消費合作社印製經濟部智慧財產局員工消費合作社印製 460933 A7 •___B7 _ 五、發明說明（d) 以縮小倍率冷（3係例如爲1/5、1/10、或1/20等)於作爲第 2物體之晶圓W上之被曝光區域(副曝光區域），形成特性圖案之縮小像。亦即，作爲第1物體之光罩Μ的圖案係位於投影系PL之物體面，作爲第2物體(或被曝光體)之晶圓 W的表面則係位於投影系PL之像面。又，晶圓W之表面塗有電子束光阻劑。晶圓（Wafer)W，例如係半導體（矽等) 或SOI(Silicon on insulator)等之圓板狀基板。本例之投影系PL，例如係由第1透鏡28A及第2透氣 28B所組成之前群27，與由第1透鏡30A及第2透氣30B 所組成之後群29所構成.之兩側遠心電子光學系，前群27 及後群29係收納在圓筒狀之鏡筒31內。透鏡28A、28B及透鏡30A、30B，例如分別係8極之靜電透鏡，但亦可使用電磁透鏡加以取代。然後，於投影系PL內，電子束EB在以前群27先集束一次以形成電子線源之像(CrOSsover)42後，以後群29於晶圓W上形成投影像。投影系PL之光軸AX2，與照明系之光軸AX1平行：於初期狀態中投影系PL之光軸AX2係與照明系之光軸AX1 —致，同時亦與鏡筒31之對稱軸（中心線)一致。又，收納投影系PL之鏡筒31，係於Y方向被一對分別作爲具有可撓性構件之板彈簧32A及32B包夾支撐，板彈簧32A及32B之X方向的兩端部，係固定於未圖示之被安定保持的支撐構件57A、57B(參照圖7)上。因此，鏡筒 31(投影系PL)，係被支撐爲能在Y方向既定範圍內位移及 18 本紙張尺度適用中國國家標準"(CNS)A4規格（210 X 297公釐〉 " ------------- I ---- l·---訂·-------- 1 > (請先閱讀背面之注意事項再4ί寫本頁) . 、 4 6 0 9 3 3 A7 B7 五、發明說明（/ 7) 振動。此外，具備有用來使板彈簧32A、32B位移及振動於Y方向之驅動系34 ’該驅動系34之動作，係由主控制系10管理下的同步驅動控制系33加以控制。又，於鏡筒 31之Y方向側面固定有雙動鏡^40，於移動鏡40上照射來自雷射干擾儀41之測量用複數軸之雷射光束，雷射干擾儀 41以未圖示之參照鏡之位置爲基準’測量鏡筒31之對Y 方向的位移量、繞X軸之旋轉角、以及繞Ζ軸之旋轉角’ 將測量結果以既定之抽樣頻率(sampUng rate)供給至驅動係 34，以及後述之校準控制系39 °驅動係34 ’根據雷射干擾儀41之測量數據、以及'同步驅動控制系33之控制資訊，使鏡筒31(投影系PL)以光軸AX2平行於光軸AX1之狀態 .向Y方向位移。亦即.，本例之投影系PL ’係藉由包含板彈簧32A、32B，雷射千擾儀41 ’以及驅動系34所構成之機械驅動系，而能以機械M0L方式位移及振動於Υ方向般構成。因此’本例之投影系鱼體爲二 |~-J' 此時，投影系PL ’由於例如係一物體面(光罩μ之圖案面)到像面(晶圓W之表面)之間隔爲100〜150mm左右之小型電子光學系’因此能以機械mol方式使之高速、且高精度的位移及振動。又，本例之投影系PL，係使用電子M0L方式’藉使內部之電磁場(本例爲電場）的分佈，以如虛線之假設的透鏡44、45所示般變化，而能使光軸AX2相對於鏡統31之對稱軸，於X方向、Y方向之既定範圍內位移。但’相對於機械MOL方式之投影系PL(光軸AX2)的位移量’將像差 19 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝·----·!--訂---------線. 經濟部智慧財產局員工消費合作社印製 46093 3 A7 ______B7 __ 五、發明說明（〖P) 抑制於容許範圍內之狀態下的電子MOL方式之光軸AX2 的位移量，成爲例如1/10左右，本例中以機械MOL方式使投影系PL作較大之位移或振動時，爲了進行晶圓W上之複製位置的修正，係以電子MOL方式使光軸AX2位移。因此，構成投影系PL之作爲電子光學系的透鏡28A、 28B及透鏡30A、30B，係分別以作爲電子驅動系之透鏡驅動系35加以驅動，透鏡驅動系35則係以同步驅動控制系 33加以控制。其次，光罩Μ係於光罩平台20上與XY平面平行的，以不會對電子束造成影響之靜電吸附等方式加以保持，光罩平台20,係構成爲能在光罩基座21上以例如線性馬達方式步進移動於X方向、Υ方向。由於本例之複製裝置之曝光部係配置於真空中，因此光罩平台20係以對真空之空間幾乎沒有影響的空氣軸承方式，或以嚴密實施對電子束之防護的磁氣懸浮型軸承方式，以幾近非接觸狀態裝載於光罩基座21上。本例之光罩Μ上，分別形成有複數之特性圖案接近配置所形成之複數的特性圖案群(詳細後述），首先，光罩平台20移動以將下一個使用之特性圖案群中心大致定位於光軸ΑΧ1附近後，爲了自該特性圖案群中選擇一個特性圖案，使用視野選擇用偏向器7。· II Γ I I--Order III Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economics Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economics 460933 A7 • ___ B7 _ V. Description of the invention For example, 1/5, 1/10, or 1/20, etc.) forms a reduced image of a characteristic pattern on an exposed region (sub-exposed region) on the wafer W as the second object. That is, the pattern of the mask M as the first object is located on the object surface of the projection system PL, and the surface of the wafer W as the second object (or the exposed object) is located on the image surface of the projection system PL. The surface of the wafer W is coated with an electron beam photoresist. Wafer (Wafer) W is, for example, a circular substrate such as a semiconductor (silicon) or SOI (Silicon on insulator). The projection system PL of this example is composed of a front group 27 composed of a first lens 28A and a second breather 28B, and a rear group 29 composed of a first lens 30A and a second breather 30B. The front group 27 and the rear group 29 are housed in a cylindrical lens barrel 31. The lenses 28A and 28B and the lenses 30A and 30B are, for example, 8-pole electrostatic lenses, but they may be replaced by electromagnetic lenses. Then, in the projection system PL, the electron beam EB is bundled once in the former group 27 to form an electron beam source image (CrOSsover) 42, and the subsequent group 29 forms a projection image on the wafer W. The optical axis AX2 of the projection system PL is parallel to the optical axis AX1 of the lighting system: In the initial state, the optical axis AX2 of the projection system PL is aligned with the optical axis AX1 of the lighting system, and is also at the same time as the axis of symmetry of the lens barrel 31 (center Line) consistent. In addition, the lens barrel 31 accommodating the projection system PL is supported in the Y direction by a pair of plate springs 32A and 32B as flexible members, respectively, and both ends of the plate springs 32A and 32B in the X direction are fixed. On the support members 57A and 57B (see FIG. 7) which are stably held (not shown). Therefore, the lens barrel 31 (projection system PL) is supported to be able to be displaced within a predetermined range in the Y direction and 18 paper sizes are applicable to the Chinese national standard "(CNS) A4 specification (210 X 297 mm>)"- ----------- I ---- l · --- Order · -------- 1 > (Please read the precautions on the back before writing this page). 、 4 6 0 9 3 3 A7 B7 V. Explanation of the invention (/ 7) Vibration. In addition, it is equipped with a drive system 34 for displacing and vibrating the leaf springs 32A and 32B in the Y direction. The synchronous drive control system 33 under the control of the control system 10 controls it. In addition, a double-action mirror ^ 40 is fixed to the side of the Y-direction of the lens barrel 31, and the moving mirror 40 is irradiated with a plurality of measuring axes from the laser interference meter 41. Laser beam, laser jammer 41 based on the position of a reference mirror (not shown) as a reference to 'measure the displacement of the lens barrel 31 in the Y direction, the rotation angle around the X axis, and the rotation angle around the Z axis' will measure The result is supplied to the drive train 34 at a predetermined sampling frequency (sampUng rate), and a calibration control system 39 ° drive train 34 described later 'based on the measurement data of the laser jammer 41, and' The control information of the step drive control system 33 causes the lens barrel 31 (projection system PL) to be displaced in the Y direction in a state where the optical axis AX2 is parallel to the optical axis AX1. That is, the projection system PL 'of this example includes The leaf springs 32A and 32B, the laser perturbator 41 ', and the mechanical drive system composed of the drive system 34 can be configured to move and vibrate in the Υ direction in a mechanical MOL manner. Therefore, the projection body of this example is two | ~ -J 'At this time, the projection system PL' is a small electro-optical system having a distance of about 100 to 150 mm from an object surface (pattern surface of the mask μ) to an image surface (surface of the wafer W) ' The mechanical mol method can be used for high-speed and high-precision displacement and vibration. In addition, the projection system of this example is PL, which uses the electronic MOL method to use the internal electromagnetic field (electric field in this example) as a dotted line. Assume that the lenses 44 and 45 change as shown, so that the optical axis AX2 can be displaced within a predetermined range of the X direction and the Y direction with respect to the axis of symmetry of the mirror system 31. However, the projection system PL relative to the mechanical MOL method PL ( Optical axis AX2) displacement 'will be aberration 19 This paper size applies Chinese national standards CNS) A4 size (210 X 297 mm) (Please read the precautions on the back before filling out this page) Install · ---- ·!-Order --------- line. Intellectual Property of the Ministry of Economic Affairs Printed by the Bureau ’s Consumer Cooperatives 46093 3 A7 ______B7 __ 5. The description of the invention (〖P) The amount of displacement of the optical axis AX2 of the electronic MOL method in a state that is within the allowable range is about 1/10, for example, in this example, When the mechanical MOL method causes a large displacement or vibration of the projection system PL, in order to correct the copy position on the wafer W, the optical axis AX2 is displaced by the electronic MOL method. Therefore, the lenses 28A and 28B and lenses 30A and 30B constituting the projection system PL are driven by a lens drive system 35 as an electronic drive system, and the lens drive system 35 is driven by a synchronous drive control system 33. control. Next, the photomask M is parallel to the XY plane on the photomask platform 20 and is held in a manner such as electrostatic adsorption that does not affect the electron beam. The photomask platform 20 is configured to be able to be on the photomask base 21 For example, a linear motor system moves stepwise in the X direction and the Y direction. Since the exposure part of the copying device of this example is arranged in a vacuum, the mask stage 20 is an air bearing method that has little effect on the vacuum space, or a magnetic suspension bearing method that strictly implements protection against electron beams. , Mounted on the photomask base 21 in a nearly non-contact state. In the mask M of this example, a plurality of characteristic pattern groups (described in detail later) formed by disposing a plurality of characteristic patterns close to each other are formed. First, the reticle stage 20 is moved to position the center of the next characteristic pattern group to be approximately In the vicinity of the optical axis AX1, in order to select a characteristic pattern from the characteristic pattern group, a field-of-view deflector 7 is used.

於固定在光罩平台20之移動鏡22(實際上係由X軸用者及Υ軸用者所構成)照射來自光罩側之雷射干擾儀23之複數軸的雷射光束，雷射干擾儀23，測量光罩平台20之X 20 ^紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公髮) " :~ ---— 丨丨 I — 丨 - ------ (請先閱讀背面之注意事項再4ί寫本頁) 訂： -線- 經濟部智慧財產局員工消費合作社印製 460933 A7 _______B7___ 五、發明說明（/ )A moving mirror 22 (actually composed of an X-axis user and a y-axis user) is irradiated with a laser beam from a plurality of axes of a laser interference meter 23 on the mask side, and the laser interference is fixed on the mask platform 20 Instrument 23, measuring X 20 of photomask platform 20 ^ Paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 issued) ": ~ ----- 丨丨 I — 丨------- (Please read the precautions on the back before writing this page) Order:-Line-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 460933 A7 _______B7___ V. Description of Invention (/)

I 方向、y方向位置，以及繞X軸之旋轉角、繞γ軸之旋轉角、繞Z軸之旋轉角（偏轉量），將測量値供給至校準控制系39及光罩平台控制系24。校準控制系39，將測量値及校準資訊供給至主控制系10，光罩平台控制系24即根據該測量値、以及來自主控制系10之控制資訊，使光罩平台 20(光罩M)平行於XY平面，且控制其位置、速度及偏轉量〇又，於光罩平台20之斜上方配置有用來檢測來自光罩 Μ之反射電子等的光罩甩反射電子檢測器37，反射電子檢測器37之檢測信號供給至校準控制系39。由於能以反射電子檢測器37檢測電子束ΕΒ照射於光罩Μ上之既定校準標誌的狀態，因此能根據此檢測結果進行光罩Μ之校準。另一方面，晶圓W係透過未圖示之晶圓保持具以不會對電子束造成影響之靜電吸附等方式，與ΧΥ平面平行的被保持於晶圓平台46上。晶圓平台46，係以能在晶圓基座47上以例如線性馬達方式連續移動於X方向，且能步進移動於X方向及Υ方向之方式構成。晶圓平台46係以對真空之空間幾乎沒有影響的空氣軸承方式，或以嚴密實 .施對電子束之防護的磁氣懸浮型軸承方式，以幾近非接觸狀態裝載於晶圓基座47上。再者，晶圓平台46，亦組裝有用以控制晶圓W表面之Ζ方向位置(焦點位置）、及其二次元傾斜角的Ζ水平機構。在晶圓W表面之複數測量點的焦點位置資訊，係以未圖示之光學式的多點式自動對焦傳感器(AF傳感器)加以測量，曝光時晶圓平台46內之Ζ水 21 J氏張尺度適用中國國家標¥7CNS)A4規格（210 X 297公 (請先閱讀背面之注意事項再填寫本頁) 裝-----r---訂---------線. 經濟部智慧財產局員工消費合作社印製經濟部智慧財產局員工消費合作社印製 4 6093 3 A7 _ B7 五、發明說明（Μ) 平機構’根據該AF傳感器之測量値以自動對焦方式，將晶圓W之表面對焦於投影系PL之像面。於固定在晶圓平台46側面之移動鏡48(此亦係由X軸用者及Y軸用者所構成)照射來自晶圓側之雷射干擾儀49 之複數軸的雷射光束，雷射干擾儀49，測量晶圓平台46 之X方向、Y方向位置，以及繞X軸之旋轉角(橫搖量）、繞Y軸之旋轉角(縱向運動量）、繞Z軸之旋轉角(偏轉量) ，將測量値供給至校準控制系39及晶圓平台控制系50，晶圓平台控制系50 即根據該測量値、以及來自同步驅動控制系33之控制資訊，使晶圓平台46(晶圓W)平行於XY 平面，且控制其位置、速度及偏轉量。又’於晶圓平台46之斜上方配置有用來檢測來自晶圓 W之反射電子等的晶圓用反射電子檢測器39，反射電子檢測器38之檢測信號供給至校準控制系39。由於能以反射電子檢測器38檢測電子束EB照射於晶圓w上之既定校準標誌的狀態，因此能根據此檢測結果進行晶圓W之校準。第1圖中，以未圖示之曝光數據記憶裝置，將曝光對象之光罩Μ的圖案構成、晶圓W上複數之攝像區域之排列資訊等之曝光數據供給至主控制系10。根據此曝光數據，主、控制系ίο即透過光H台'.11.動.m.遍向量設定部呈、24，依序將電于束EB照射於自光罩Μ上所選擇之複數 ------------------··* ....... ... .. ···"........................--------- ------ .... .... ^ 個特性圖案上’同時透過同步驅動控制系33進行晶圓平台 —~~ 一必 46及投影系PL之機械、電子MOL方式之靈動，據以將所選擇之特性圖案的縮小像連接複製於晶圓W上之曝光對象 22 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I — — — — 111' -----：----·ΙΙ — — — — — — ! ί ' /__..... (請先閱讀背面之注意事項再填寫本頁) A7 4 60933 ___ B7_____ 五、發明說明（Ή) 的攝像區域內。以此方式，於晶圓w上之各攝像區域複製分別作爲目標之圖案的縮小像。此處，說明本例之光罩Μ的圖案配置、及晶圓W上之攝像配置之一例。第2圖(Α)係顯示複製對象之光罩Μ之一例的俯視圖，第2圖(Β)係第2圖(Α)中Β部之擴大圖，第2圖(C)係第 2圖(Β)之沿CC線的截面圖。第2圖(Α)中，光罩Μ之圖案區域上，於X方向及Υ方p以既定之節距形成有特性圖案群13，並以在Υ方向包挾^圖案區域之方式，形成有由一對2次元之金屬膜所構成之校準標誌.14Α、14Β。光罩Μ 係在矽晶圓之內部形成多數之特性圖案者，其外周部形成有角度檢測用之切口部12。光罩Μ上之各特性圖案群13 中，如第2圖(Β)所示，於X方向及Υ方向以既定之節距形成有互異之特性圖案15Α、: 15Β、15C…15Υ。如第2圖(C)所示，光罩Μ中r特性圖案群13所形成之部份17，係形成的較其他區域爲薄，該部份Π中相當於特性圖案之部份（電子束通過的部份)係成爲貫穿孔。該部份17可以是矽(Si)之薄膜，但亦可使該部份Π爲例如氮化矽(SiN)等之薄膜。如上述般，本例之光罩Μ雖係所謂之開孔模板光罩(Stencil mask)，但亦可使用在穿透電子束之膜上設置散射鎢(W)等電子束之薄膜的所謂散射光罩。第2圖(B)中，各特性圖案Ί5Α〜15Y係分別形成於寬度D之正方形區域內，相鄰之特性圖案間之交界部係不使電子束穿透之區域、或散射電子束之區域（非圖案區域）。 ^ 23 -------------裝-----^—-訂---------線 (請先閱讀背面之注意事項再氣寫本頁) 經濟部智慧財產局員工消費合作杜印製本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4 60933 A7 ----------- 五、發明說明又’以第1圖之電子束EB在第2圖(B)上形成之照射區域 14，係寬度僅略大於D之正方形，能僅將自特性圖案群13 中所選擇之一個特性圖案(例如15A等)以照射區域完全覆蓋。又，互異之特性圖案群13中，分別形成有互異之複數 .個特性圖案。此外，各特性圖案15A〜Ί5Υ，在分割複製時 ’係與分割大原版圖案之最小單位圖案的「副視野」對應〇進一步的，於特性圖案群13之四角形成有由反射電子束之金屬膜所構成之2次元(此處爲十字形)的校準標誌16A 〜16D。此時，例如於第:.1圖中，驅動光.罩平台20以將光罩Μ上之第2圖(A)的校準標誌14A、14B依序移動至光軸 ΑΧ1附近後，驅動偏向器7使電子束ΕΒ向X方向、Υ方向掃瞄，同時處理來自反射電子檢測器37之檢測信號，據以檢測出校準標誌14Α、14Β之座標，根據此檢測結果算出光罩Μ之中心座標及旋轉誤差。之後，例如旋轉光罩平台20以抵消該旋轉誤差，據此，即能算出光罩Μ上之各特性圖案群13之排列座標。然後_，根據以上述方式算出之排列座標’驅動光罩平台20，據以將第2圖(Α)上曝光所使用之特性圖案群13之中心，大致定位於第1圖之照明系之光軸ΑΧ1上。於此狀態下，驅動偏向器7使電子束ΕΒ掃瞄於X方向、Υ方向 ’以處理來自反射電子檢測器37之檢測信號’據以檢測第 2圖(Β)之校準標誌16Α〜16D中至少二個校準標誌之座標。之後，藉處理所獲得之二個位置之校準標誌的座標’即 24 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝·-------訂---------線，！經濟部智慧財產局員工消費合作社印製 460933 A7 ____ B7____ 五、發明說明（>1) 能高精度的算出以該特性圖案群13內之各特性圖案15A〜 15Y之光軸AX1爲原點的排列座標。根據以上述方式算出之排列座標驅動第1圖之偏向器7 ,即能將電子束之照射區域14正確的移動至特性圖案15A〜15Y中期望之特性圖案上，且亦能將穿透該期望之特性圖案的電子束，透過第 1圖之偏向器25高精度的振回至光軸AX1上。亦即，本例中，由於係將各特性圖案群13內之特性圖案15A〜15Y之排列座標，最後根據校準標誌16A〜16D之位置加以求出，因此第1圖之光罩平台20的定位精密度並不須要特別的高。 ' 特性圖案15A〜15Y之外形的寬度D，例如爲ΙΟΟμπι 〜ΙΟΟΟμιη左右，本例中，在各特性圖案群13內雖分別形成有5行Χ5列的特性圖案，但亦可在各特性圖案群13內分別形成5行Χ5列〜20行X 20列左右的特性圖案。另一方面，第3圖(Α)係顯示晶圓W之俯視圖，第3 圖(Β)係第3圖(Α)中之Β部的擴大圖，第3圖(Α)中，晶圓 W之表面於X方向、Υ方向以既定之節距配置有多數之攝像區域52，各攝像區域52中分別複製一個晶粒份之電路圖案。又，於各攝像區域52中分別複製複著個晶粒份之電路圖案亦可。又，以在Υ方向包挾該等攝像區域52之方式，形成有由一對2次元之金屬膜所構成之檢索校準標誌 53Α、53Β，於晶圓W之外周部形成有角度檢測用的切口部 5卜如第3圖(Β)所示，各攝像區域52，係將分別複製一個 25 紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝！l·---訂--------..線經濟部智慧財產局員工消費合作社印製 460933 A7 B7 五、發明說明（Wo 特性圖案之縮小像的最小單位之被曝光區域的多數個「副曝光區域54」，緊密排列於X方向、Y方向者。又，若將 -根據第1圖之投影系PL的一個特性圖案的縮小像設爲第3 圖(B)之縮小像43的話，使用特性圖案外形之寬度D及投影系PL之投影倍率yS，所有像43及副曝光區域54即分別爲寬度Θ · D之正方形區域。然後，相對於依序變化之縮小像43將攝像區域52相對移動於X方向、Y方向，於攝像區域52之全部的副曝光區域54上分別複製對應之特性圖案的縮小像。若將光罩Μ上各特性圖案之大小設爲500μπι角、投應倍率/3爲1/10的話，則晶圓W上之攝像區域52內的各副曝光區域54爲50μιη角，攝像區域52爲例如一邊之長度爲20〜30mm左右之矩形或正方形之區域。本例中，由於係將攝像區域52內全部的副曝光區域54所對應之特性層案之縮小像以高效率加以複製，因此係以後述機械方式使投影系PL位移或振動。接著，參照第4圖〜第6圖說明本例之電子束小複製裝置全體之機械構成。第4圖係顯示本例之複製裝置全體之截面圖，此第4 圖中，本例之複製裝置係配置於能將內部維持於密閉狀態之箱狀堅固的框體60內。框體60，再收納於更大的處理室(未圖示)內，於該處理室內之框體60的周圍，例如供給有大致爲大氣壓、溫度受到控制之高度防塵的乾燥空氣。框體60，透過防振台64A、64B(實際上係配置於三或四個 26 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----------------裝·-- (請先閱讀背面之注意事項再4(寫本頁) . .線經濟部智慧財產局員工消費合作社印製 Λ 60933 Α7 Β7 五、發明說明（Λ) 位置)裝載於基座構件65上，框體60之內部，區分爲：密閉性特別高的曝光室66，進行光罩Μ之交換時所使用之光罩側的減壓室67，與外氣(包圍框體60之處理室內部的氣體)相通之光罩收納室68，進行晶圓W之交換時所使用之晶圓側的減壓室69，以及與外氣相通之晶圓收納室70。減壓室67、69即相當於本發明之預備室。於包圍曝光室66 之側壁上良上部到底部形成有複數之排氣孔，該等排氣孔分局透過排氣管62Α〜62Ε連接於真空泵63，曝光時即藉由真空泵63將曝光室66之內部維持於例如1〇_7托左右之高真空狀態。又，以包圍光罩側之減壓室67之狀態設置區隔板93( 參照第5圖），曝光室66與減壓室67間之交界部設有由驅動部77A進行開關之開關構件76A，減壓室67與光罩收納室68間之交界部設有由驅動部77B進行開關之開關構件 76B。同樣的.，以包圍晶圓側之減壓室69之狀態設置區隔板94(參照第6圖），曝光室66與減壓室69間之交界部設有由驅動部87A進行開關之開關構件86A，減壓室69與晶圓收納室70間之交界部設有由驅動部87B進行開關之開關構件86B。又，於減壓室67及69之分隔壁之二個位置的開口，連接有：分別通於真空泵63之排氣管62F及62G ’ 與具備有用來隨時取入周圍氣體之開關自如的電磁閥78及 88的排氣管。再者，減壓室67及69內分別配置有用來進行光罩及晶圓之搬送的平台79及89。此外，於曝光室66中，於框體60上部之密閉的蓋61 27 本紙張尺度適用中國國家標準（CNS〉A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝訂----：----.線，經濟部智慧財產局員工消費合作社印製 A7 4 60933 ____Β7____ 五、發明說明（7 L) 內配置電子鎗1，電子鎗1之下依序配置有聚光透鏡2、聚光透鏡系5、視野選擇用偏向器7及光罩Μ。又，爲了易於了解圖式，第1圖中之孔徑板4等之構件在第4圖中予以省略。此外，光罩基座21係固定於框體60，配置有用來驅動保持光罩Μ之光罩平台20的粗動平台73，粗動平台23，係相對於該光罩平台21以一對線性馬達74Α及74Β 驅動於Υ方向。第4圖中，光罩側之移動鏡22及雷射干擾儀23等所構成之光罩平台用測量系統，實際上亦係由第5 圖所示般之二軸份要件所構成。第5圖係將第4圖中光罩平台20之驅動系及測量系統的一部份以截面顯示之俯視圖，該第5圖中，於該光罩平台20之X方向及Υ方向側面分別固定X軸移動鏡22Χ及 Υ軸移動鏡22Υ，於光罩基座21上與移動鏡22Χ及22Υ平行的，分別固定有參照鏡22RX及22RY。然後，自X軸之雷射干擾儀23Χ透過框體60所設之窗構件71Χ，對移動鏡 22Χ及參照鏡22RX，沿X軸分別照射複數軸及單軸的雷射光束，自Υ軸之雷射干擾儀23Υ透過框體60所設之窗構件71Υ，對移動鏡22Υ及參照鏡22RY，沿Υ軸分別照射複數軸及單軸的雷射光束，雷射干擾儀23Χ及_23Υ，以參照鏡22R及22RY爲基準，測量移動鏡22Χ、22Υ(光罩平台 20)之X座標、Υ座標及繞3軸之旋轉角。又*光罩平台20，係配置於橫U字形之粗動平台73 內，粗動平台73，係相對於光罩平台20沿與Υ軸實質上平行之導引面21a，以線性馬達74Α、74Β驅動於Υ方向。 28 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝----l·---訂--------線. 經濟部智慧財產局員工消費合作社印制衣 4 6 0 9 3 3 A7 B7 五、發明說明（巧）此外，於粗動平台73內面形成有實質上與X軸平行之導引面73a，沿導引面73a滑動自如的配置有導引構件96 ’ 相對於導引構件96透過分別伸縮自如於γ方向之二個位置的傳動裝置95Α、95Β ’配置有光罩平台20。作爲傳動裝置95Α、95Β，可使用例如具有Ε字形磁芯之電磁鐵與1 字形磁芯之所謂ΕΙ磁芯方式之非接觸傳動裝置、以羅倫兹力作爲推力之非接觸傳動裝置、或小型的線性馬達等° 此外，由固定於光罩平台20之+ Υ方向端部之可動構件，與固定於粗動平台73之一邊部的定子構成線性馬達 74D，由固定於導引構件' 96之可動構件.，與固定於粗動平台73之另一邊部的定子構成線性馬達74C，以一對線性馬達74C、74D將導引構件96及光罩平台20 —體的相對於粗動平台73驅動於X方向。進一步的，藉控制二軸之傳動裝置95Α、95Β之伸縮量，即能控制光罩平20之相對於粗動平台73(光罩基座21)之旋轉角(偏轉量）。又’於曝光室 66內之與減壓室67間之交界部附近，減壓室.67內之平台 79與光罩平台2Q之間，設有將光罩之位置關係保持在既定狀態下進行光罩之搬送的機械臂75。此外，減壓室67右側之光罩收納室68中，設有用來暫時裝載光罩之旋轉平台81，於旋轉平台81之周圍設有攝像方式之位置檢測裝置82Α〜82C。進一步的，於光罩收納室68之與外氣相連之開口部的附近，設有光罩收納庫 97，光罩收納庫97內收納有形成複數之特性圖案群之複數片光罩(顯示有其最上部之光罩ΜΝ)，該複數之特性圖案群 29 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ^-----·1---訂----------線經濟部智慧財產局員工消費合作社印製 460933 A7 __B7___ 五、發明說明 (>^) * 與光罩Μ所形成之特性圖案群種類相異。於光罩收納庫97 與旋轉平台81與減壓室67內之平台79之間，設有將光罩之位置關係保持在既定狀態下進行光罩之搬送的機械臂80 。以上述機械臂75、平台79及機械臂80等構成光罩供料系。此時，以位置檢測裝置82Α〜82C檢測自光罩收納庫 97取出、裝載於旋轉平台81上之位置Ρ2的光罩外周部之切口部，以及其他二個位置之邊緣部的位置，即能檢測出以該光罩之切口部爲基準之旋轉誤差及2次元之位置誤差。是以，爲了抵消該旋轉誤差而旋轉旋轉平台81，爲了抵消該2次元之位置誤差而透過機械臂80將該光罩裝載於減壓室67內之平台79上之位置Ρ1後，將該平台79上之光罩透過曝光示66內之機械臂75，以旋轉角不至變化之方式裝載於光罩平台20上，即能進行曝光對象之光罩的預校準。回到第4圖，將光罩自光罩收納室68內之旋轉平台 81上的位置Ρ2搬.入減壓室67內之平台79上的位置Ρ1時，關閉開關構件76Α而開關構件76Β即成爲打開之狀態，在光罩裝載於位置.Ρ1的狀態下，開關構件76Β及電磁閥 78亦關閉。然後，透過排氣管62F進行排氣使減壓室67 內成爲真空狀態後，打開開關構件76Α將光罩自'位置Ρ1 搬入光罩平台20上。另一方面，光罩平台20上已曝光之光罩Μ在被搬出到減壓室67內之平台79上後，關閉開關構件76Α、76Β，打開電磁閥78使減壓室67內成爲大氣壓 30 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝--------—訂---------線 ~ ' 經濟部智慧財產局員工消費合作社印製經濟部智慧財產局員工消費合作社印製 460933 A7 _______B7______ 五、發明說明（ή ) 後，打開開關構件76B將平台79上的光罩放回光罩收納室 68內之光罩收納庫97(參照第5圖）。如上述般，由於本例中設有減壓室67，因此能夠在真空狀態之曝光室66內與大氣壓之光罩收納室68之間迅速的進行光罩之交換。其次，於曝光室66中光罩基座21的下方，依序設置振回用之偏向器25、投影系PL及晶圓W，透過鏡筒31及板彈簧32A、32B(參照第1圖)保持投影系PL之支撐構件 57A、57B，係安定的固定於框體60，晶圓W係透過晶圓保持具98保持在晶圓平台46上，晶圚平台46係2次元移動自如的裝載於晶圚基座.47上。晶圓基座47係固定於框體60之底面上，於晶圓基座47上配置有用來驅動晶圓平台46之粗動平台83，粗動平台83係相對於該晶圓基座47 以一對線性馬達84 A、84B驅動於Y方向。第4圖中，晶圓側之移動鏡48及雷射干擾儀48等所構成之晶圓平台用測量系統，實際上亦係由第6圖所示般之二軸份要件所構成。第6圖係將第4圖中晶圓平台46之驅動系及測量系統的一部份以截面顯示之俯視圖，該第6圖中，於該晶僩平台46之X方向及Y方向側面分別固定X軸移動鏡48X及 Y軸移動鏡48Y，於晶圓基座47上與移動鏡48X及48Y平行的，分別固定有參照鏡48RX及48RY。然後，自X軸之雷射干擾儀49X透過框體60所設之窗構件72X，對移動鏡 48X及參照鏡48RX，沿X軸分別照射複數軸及單軸的雷射光束，自Y軸之雷射干擾儀49Y透過框體60所設之窗構 31 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ----l·---訂---------線- 經濟部智慧財產局員工消費合作社印刹衣 4 6 0 9 3 3 Α7 Β7 五、發明說明0D) 件72Y，對移動鏡48Y及參照鏡48RY，沿Y軸分別照射複數軸及單軸的雷射光束，雷射干擾儀49X及49Y，以參照鏡48R及48RY爲基準，測量移動鏡48X、48Y(晶圓平台 46)之X座標、Y座標及繞3軸之旋轉角。又，晶圓平台46，係配置於橫U字形之粗動平台83 內，粗動平台83，係相對於晶圓平台46沿與Y軸實質上平行之導引面47a，以線性馬達84A、84B驅動於Y方向。此外，於粗動平台83內面形成有實質上與X軸平行之導引面83a，沿導引面83a滑動自如的配置有導引構件100，相對於導引構件100透過分別伸縮自如於Y方向之二個位置的傳動裝置99A、99B，配置有晶圓平台20。又，與第5圖之光罩平台20同樣的，第6圖之晶圓平台46及導引構件100，係以一對線性馬達84C、84D —體的相對於粗動平台83沿導引面83a驅動於X方向。進一步的，藉控制二軸之傳動裝置99A、99B之伸縮量，即能控制經圓平台46之相對於粗動平台83(晶圓基座47)之旋轉角 (偏轉量）。又，於曝光室66內之與減壓室69間之交界部附近，減壓室69內之平台89與晶圓平台46之間’設有將晶圓之位置關係保持在既定狀態下進行晶圓之搬送&機# 臂85 〇此外，減壓室69右側之晶圓收納室70中’設有用來暫時裝載晶圓之旋轉平台91，於旋轉平台91之周圍設有· 攝像方式之三個位置檢測裝置92Α〜92C。進一步的’於晶圓收納室70之與外氣相連之開口部的附近’設有晶 32 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）； ' 裝-----：----訂-----J—----線' > V .·./ (請先閱讀背面之注意事項再W寫本頁) 460933 A7 B7 五、發明說明（Yh 101，晶圓匣101內收納有已曝光或未曝光之晶圓(顯示有其最上部之晶圓MN)。於晶圓匣101與旋轉平台91與減壓室69內之平台89之間’設有將晶圓之位置關係保持在既定狀態下進行晶圓之搬送的機械臂90。以上述機械臂85、平台89及機械臂90等構成晶圓供料系。此外，與光罩收納室68同樣的，晶圓收納室70，亦係以位置檢測裝置92A〜92C檢測自晶圓匣101取出、裝載於旋轉平台91上之位置P4的晶圓外周部之切口部，以及其他二個位置之邊緣部的位置，算出旋轉誤差及2次元之位置誤差。之後，爲了抵消該旋轉誤差及位置誤差而透過機械臂90將該晶圓裝載於減壓室69內之平台89上之位置 P3後，將該平台89上之晶圓透過曝光示66內之機械臂85 ，裝載於晶圓保持具98上，即能進行曝光對象之晶圓的預校準。回到第4圖，將晶圓自晶圓收納室70內之位置P4搬入減壓室69內之位置P3時，關閉開關構件86A而開關構件86B即成爲打開之狀態，在晶圓裝載於位置P3的狀態下，開關構件86B及電磁閥88亦關閉。然後，在減壓室69 內成爲真空狀態後，打開開關構件86A將晶圓自位置P3 搬入晶圓保持具98上。另一方面，晶圓平台46上已曝光之晶圓E在被搬出到減壓室69內之平台89上後，關閉開關構件86A、86B，打開電磁閥88使減壓室69內成爲大氣壓後，打開開關構件86B將平台89上的光罩放回晶圓收納室70內之晶圓匣101(參照第6圖）。如上述般，由於本例 33 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝-----•画---訂---------線· 經濟部智慧財產局員工消費合作社印製 A7 460933 _ B7 _ 五、發明說明(yi) 中設有減壓室69，因此能夠在真空狀態之曝光室66內與大氣壓之晶圓收納室70之間迅速的進行晶圓之交換。又，將上述晶圓供料系（光罩供料系亦同)分爲供料系與卸載系，以謀求縮短晶圓（光罩）之交換時間亦可。又，例如於第6圖中，亦可配置至少二台晶圓平台46，以在進行一片晶圓之曝光的同時，實施下一片晶圓之供料或校準等之各種動作。此外，爲了在晶圓上各攝像區域之第二層以後之層(layer)上複製光罩圖案，以標誌檢測系檢測晶圓上複數之校準標誌，根據該檢測結果將晶圓上各攝像區域內之副曝光區域與對應έ光罩上副視野之縮小像正確的加以定位。該標誌檢系，在本例中係以電子束檢測被檢標誌，但亦可使用光學式標誌檢測系加以取代。其次，參照第7圖〜第11圖，說明將第1圖中之投影系PL機械的驅動於Υ方向之驅動系34的具體構成例，以及本例之機械MOL方式與電子MOL方式之動作的一例。第7圖係顯示第1圖之視野選擇用之偏向器7〜晶圓 W之構件之一例中的部份切除擴大立體圖，該第7圖中’ 光罩Μ上曝光對象之特性圖案群13之中心與照明系之光軸ΑΧ1大致一致。又，藉檢測第2圖(Β)之校準標誌16Α〜 16D中至少二個校準標誌的位置，將以特性圖案群13中各個寬度D之正方形區域內之特性圖案15Α〜15Υ之光軸 ΑΧ1爲原點的排列座標，視爲高精度求出者。第7圖中，例如將光罩Μ上特性圖案15Ν之縮小像複 /菊^晶圓W上之一個攝像區域52內時，以偏向器7將電、/ 34 民張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝------r---訂ί.--- 線. 經濟部智慧財產局員工消費合作社印製經濟部智慧財產局員工消費合作社印製 460933 A7 B7 五、發明說明（ο) 子__束ΕΒ之照射區域14移動至霞特J生凰案Jlili;，穿透特性圖案15N之電子束EB，藉振回用之偏向器25正確的移動至光軸AX1上。第7圖之狀態中，照明系之光軸AX1與投影系PL之光軸八又2係一致。然後，移動至光軸八义1上之電子束EB，藉透鏡28A、28B等所構成之投影系PL，於構成攝像區域52之多數之各個寬度*D)之正方形副曝光區域54內的一個副曝光區域上，形成以投影倍率/3縮小特性圖案15N的縮小像43。此外，投影系PL係收納於鏡筒31，鏡筒31係被一對板彈簧32A、32B於Y方向夾持之方式加以保持，板彈簧 32A、32B之X方向的兩端部係固定於支撐構成件57A、 57B。因此，投影系PL係被板彈簧32A、32B支撐爲能在 Y方向位移及振動。'且，在板彈簧32A及32B之一Y方向的面上分別以黏著等方式，固定有壓電元件所構成之伸縮一辦一一一自如的驅動元件111A、111B及112A、112B，在板彈簧 32A及32B之+ Y方向的面上亦分別以和驅動元件111A、 111B及112A、U2B對向之方式，固定有壓電元件所構成之伸縮自如的驅動元件111C、111D及112C、112D。又，作爲驅動元件111A〜111D及112A〜112D，除壓電元件以外亦可使用電伸縮（electrostriction)元件或磁伸縮 (magnetostriction)元件等。本例中係使用未圖示之控制部，藉將一組驅動元件111A、111B、112A、112B與另一組驅動元件111C、111D、112C、112D以相位互爲反轉之狀態以一定之周期伸縮，將投影系PL全体振動於平行於Y軸 35 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------,---—^ ----訂---------線·： (請先閱讀背面之注意事項再«:寫本頁) A7 460933 ______B7_______ 五、發明說明ΠΥ) 之方向(Y方向）。亦即，投影系PL之機械振動方向MV爲 Y方向。該驅動元件111A〜111D ' 112A〜112D及該控制系係對應於第1圖之驅動系34。第8圖係顯示驅動元件111A〜111D、112A〜112D之伸縮狀態與投影系PL(鏡筒31)之位移間的關係，首先，如第8圖(A)般’當該等驅動元件之伸縮量爲〇時，投影系 PL不位移。相對於此’如第8圖(B)所示，一組驅動元件 111A、111B、112A、112B收縮，而另一組驅動元件111C 、111D、112C、112D 伸張時’板彈簧 32A、32B 即向 + Y 方向彎曲，投影系PL亦'向+ Y方向(方向MVA)位移。另方面，如第8圖(C)所示，一組驅動元件111A、111B、 112A、112B伸張，而另一組驅動元件111C、111D、112C 、112D收縮時，板彈簧32A、32B即向一 Y方向彎曲，投影系PL亦向一Y方向(方向MVB)位移。如上述般，藉將二組驅動元件於相位互爲反轉之狀態以一定之周期(一定頻率 )伸縮，即能將投影系PL振動於Y方向。又，藉控制該二組驅動元件之伸縮量的最大値，即能控制投影系PL振動時之振幅。又，第7圖中，於鏡筒31之-Y方向側面固定有由鏡子所構成之移動鏡40，該鏡子具有與ZX平面大致平行之反射面，又，與移動鏡40大致平行的配置有參照鏡40R。參照鏡40R，係以相對於支撐構件57A、57B不至相對位移般，固定於未圖示之支撐構件上。然後，自固定於該支撐構件之雷射干擾儀41對移動鏡40照射3軸的雷射光束， 36 (請先閲讀背面之注意事項再填寫本頁) Ά衣--------訂---------線— 經濟部智慧財產局員工消費合作社印製紙張尺度適用中國國家ί票^(CNS)A4規格(21〇 χ 297公釐） ^ 60933 A7 ______B7_ 五、發明說明於參照鏡40R上照射例如單軸的雷射光束，雷射干擾儀41 ，以參照鏡40R爲基準，以既定之抽樣頻率測量移動鏡40 及鏡筒31(投影系PL)之對Y方向的位移量、繞X軸之旋轉角、以及繞X軸之旋轉角。此測量値連續的供給至驅動元件111A〜111D、112A〜112D之控制系，此控制系即根據該測量値控制驅動元件111A〜111D、112A〜112D之伸縮量，據以將鏡筒31及投影系PL在不旋轉的狀態下，以既定之振幅、且既定之頻率沿機械振動方向MV加以振動。如上述般，由於本例係實際的以雷射干擾儀41測量投影系PL之位移量及旋轉角，將該測量値回饋至驅動系，因此能以機械MOL方式使投影系PL全體向Y方向安定的振動。又，爲了監視投影系PL之位移量，分別於板彈簧 32A、32B之至少一面上覆蓋應變儀(strain gage)等之伸縮量測量元件，以該伸縮量測量元件直接測量板彈簧32A、32B 之伸縮量亦可。進一步的，爲了監視投影系PL之位移量，使用非接觸方式之靜電容量傳感器或光學式間隙傳感器 (gap sensor)等亦可,。又，第7圖之實施形態中，在一片板彈簧32B(對32A 亦同）上覆蓋有二對的驅動元件111A〜111D，但亦可將三對以上的驅動元件、例如在板彈簧32A上於Z方向覆蓋各二列之四對驅動元件。據此，即能使投影系PL之振幅變大。又，例如在驅動元件111A之伸縮特性提升之時’在一片板彈簧32A(對32B亦同）覆蓋一對驅動元件，或僅覆蓋 —個驅動元件亦可。 37 、紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝 I — I I I 訂—丨---^----、經濟部智慧財產局員工消費合作社印製 4 60933 A7 B7 經濟部智慧財產局員工消費合作社印制取五、發明說明（w) 如上述般，本例之投影系PL之機械驅動系，雖係使用伸縮自如之驅動元件，但除此之外，亦可使用例如音聲線圈馬達或線性馬達等，以機械方式使投影系PL位移亦可。第9圖，係顯示以音聲線圈馬達方式驅動投影系pl 之機械驅動系之構成例，該第9圖中，收納投影系PL之鏡筒31，係被板彈簧32A、32B包挟之方式加以保持，板彈簧32A、32B係固定於支撐構件57A、57B。且，板彈簧 32A、32B的外面，分別固定有由非磁性體所構成之圓筒構件113A、113B，於圓筒構件113A、113B之前端部捲有線圈114A、114B。又，圓筒構件113A、113B之內部以非接觸狀態.插入作爲發磁體之永久磁石115A、115B，於永久磁石115A、115B上以非接觸狀態包挾圓筒構件113A、113B 般，固定有由磁性體所構成之前端呈圓筒狀的軛116A、 116B。永久磁石115A、115B及軛116A、116B，係相對於支撐構件57A、57B不至相對位移般固定於未圖示之支撐構件。 . 線圈114A、114B，永久磁石115A、115B及軛116A、 116B構成音聲線圈馬達(VCM)。此時，藉於線圏114A及 114B流通電流，於板彈簧32A、32B所具可撓性之方向，亦即沿機械振動方向MV於線圈114A、1Ί4Β之相同方向，產生由羅倫茲力所構成之推力。據此，板彈簧32A、32B 向該方向彎曲鏡筒31(投影系PL)亦位移。此時，對線圏 114A、114B例如以既定頻率供給既定振幅之交流電流，即 38 ----------— II - I I I l· I I I * — — — — ! — — — 4 > (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4 60933 A7 ___；_ B7_____ r\ 五、發明說明（、）能沿振動方向MV，以該既定頻率、既定振幅使投影系振動。 ' 此情形中，同樣的爲了監視鏡筒31(投影系PL)之位移量，分別於板彈簧32A、32B之內面覆蓋由應變儀所構成之伸縮量測量元件127A、127B，以該伸縮量測量元件驅動該音聲線圏馬達，即能高精度的使投影系PL振動。又，第9圖之例中，爲了監視鏡筒31之位移量，使用雷射干擾儀等亦可。又，尤其是音聲線圈馬達方式，可使投影系PL 安定的沿振動方向MV高精度的位移所期望之量後使其靜止。回到第7圖，以本例說明將光罩Μ上一個或複數個特性圖案，依序複製於晶圓W上之攝像區域52內時之基本動作。本例中，係使驅動元件111Α〜111D、112Α〜112D 伸縮以使板彈簧32Α、32Β向Υ方向彎曲，據以使投影系 PL以既定頻率、既定振幅振動於沿Υ方向之振動方向MV 。以此方式，於晶圚W上之攝像區域52內Υ方向之寬度爲L1之主曝光區域110Α內之一列副曝光區域54上，分別複製對應之光罩Μ上之特性圖案的縮小像。寬度L1，其一例係副曝光區域54之寬d的10〜30倍左右，但在第7圖中爲了易於理解，寬度L1係設定成寬d的9倍。第10圖係顯示使投影系PL向Y方向振動之狀態，此第10圖中，第10圖(A)係投影系PL之光軸AX2 —致於照明系之光軸AX1，光罩Μ上特性圖案15B之投影系PL的縮小像曝光於晶圓W上之副曝光區域54Α。其次，如第10 圖(Β)所示，在將通過光罩Μ上之特性圖案15C之電子束 39 本紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ----l· I--訂· I------- 經濟部智慧財產局員工消費合作社印製 460933 經濟部智慧財產局員工消費合作社印製 A7 __^_B7_____ 五、發明說明（彳） EB振回於光軸AX1上之狀態下，使投影系PL朝方向 MVA( +Y方向)位移Ayl。此時，若假設本例之投影系PL，係由前群27及後群 29所構成之反轉投影系的話，使用投影倍率3(0<丨)縮小像之向+ Υ方向之位移量ΛΥ1，即如下。 △Υ1 = (1+Θ)ΔΥ1 --(1) 因此，能藉由使位移量AY1成爲晶圓W上之副曝光區域54的寬d(排列節距），將特性圖案15C之縮小像曝光於晶圓W上與副曝光區域54A鄰接之副曝光區域54B。同樣的，如第10 _(C)所示，若欲將光罩Μ上之特性圖案15Α之縮小像曝光於晶圓W上與副曝光區域54Β鄰接之副曝光區域54C時，在將穿透特性圖案15Α之電子線ΕΒ 振回至光軸ΑΧ1上的狀態下，將對投影系PL之方向MVA 之位移量Ay2的縮小像之位移量△γ2(=(1+/3) Ay2)成爲 2 · d即可。但’如第10圖(A)、（B)、（〇般，若假設使用投影系 PL之縮小像的位p量爲0，ΔΥ1，Αγ2之時點爲tl，t2， t3 ’時點爲tl，t2，t3之間隔的最小値爲τ的話，於晶圓 W上之電子束光阻劑之感度高(所需感光量較少)時，大致僅以該時點爲tl，t2, t3爲中心之曝光時間遠較間隔T爲短)分別以第1圖之遮蔽用之偏向器3作爲非動作狀態，藉於光罩Μ上之照射但須束eb，而能分別將對應之特性圖案的縮小像曝光於晶圖w上相異之副曝光區域 54A、54B、54C。此時，例如因晶圓w上之層而使得電子 40The positions in the I direction, the y direction, and the rotation angle about the X axis, the rotation angle about the γ axis, and the rotation angle (deflection amount) about the Z axis are supplied to the calibration control system 39 and the mask platform control system 24. The calibration control system 39 supplies the measurement frame and calibration information to the main control system 10, and the photomask platform control system 24 makes the photomask platform 20 (photomask M) based on the measurement frame and the control information from the main control system 10. It is parallel to the XY plane and controls its position, speed, and deflection amount. Also, a photomask detection electron detector 37 for detecting reflected electrons from photomask M, etc. is disposed above the obliquely above the photomask platform 20, and the photoelectron detection The detection signal from the controller 37 is supplied to the calibration control system 39. Since the state of the predetermined calibration mark irradiated by the electron beam EB on the photomask M can be detected by the reflection electron detector 37, the photomask M can be calibrated based on the detection result. On the other hand, the wafer W is held on a wafer stage 46 in parallel to the XY plane through a wafer holder (not shown) in a manner such as electrostatic adsorption that does not affect the electron beam. The wafer stage 46 is configured to be continuously movable in the X direction on the wafer base 47 by, for example, a linear motor method, and is capable of moving in the X direction and the Y direction in steps. The wafer stage 46 is an air bearing method that has little effect on the vacuum space, or is compact. A magnetic suspension type bearing that protects against electron beams is mounted on the wafer base 47 in a nearly non-contact state. Furthermore, the wafer platform 46 is also equipped with a Z-level mechanism for controlling the Z-direction position (focus position) of the wafer W surface and its two-dimensional tilt angle. The focal position information of the plurality of measurement points on the surface of the wafer W is measured by an optical multi-point auto-focus sensor (AF sensor) (not shown). The scale is applicable to the Chinese national standard ¥ 7CNS) A4 specification (210 X 297 male (please read the precautions on the back before filling this page). -------- r --- order --------- line. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 6093 3 A7 _ B7 V. Description of the invention (M) The flat mechanism 'according to the measurement of the AF sensor, the crystal The surface of the circle W is focused on the image plane of the projection system PL. A moving mirror 48 (which is also composed of X-axis users and Y-axis users) fixed on the side of the wafer platform 46 radiates laser beams from a plurality of axes of the laser jammer 49 on the wafer side. Interferometer 49 measures the X and Y positions of the wafer platform 46, as well as the rotation angle (roll amount) about the X axis, the rotation angle (longitudinal movement amount) about the Y axis, and the rotation angle (deflection amount) about the Z axis ), And supply the measurement frame to the calibration control system 39 and the wafer platform control system 50. The wafer platform control system 50 then makes the wafer platform 46 (wafer) based on the measurement frame and control information from the synchronous drive control system 33. W) is parallel to the XY plane and controls its position, speed, and amount of deflection. Further, a wafer reflection electron detector 39 for detecting reflected electrons from the wafer W and the like is arranged diagonally above the wafer platform 46, and a detection signal of the reflection electron detector 38 is supplied to the calibration control system 39. Since the state of the predetermined calibration mark irradiated by the electron beam EB on the wafer w can be detected by the reflection electron detector 38, the wafer W can be calibrated based on the detection result. In FIG. 1, an exposure data storage device (not shown) supplies the exposure data of the pattern configuration of the mask M of the exposure target, the arrangement information of the plurality of imaging regions on the wafer W, and the like to the main control system 10. Based on this exposure data, the main and control systems are through the light H stage '. 11. move. m. The pass vector setting unit is 24, and sequentially irradiates the electric beam EB to the selected complex number from the photomask M ------------------- *. . . . . . . . . . . . ·· &&;. . . . . . . . . . . . . . . . . . . . . . . . --------- ------. . . . . . . . ^ On the characteristic pattern, the wafer platform is simultaneously driven through the synchronous drive control system 33— ~~ The motion of the mechanical and electronic MOL methods of Yibi 46 and the projection system PL, so that the reduced image of the selected characteristic pattern is copied and copied to Exposed object on wafer W 22 This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) I — — — — 111 '-----: ---- · ΙΙ — — — — — —! Ί '/ __. . . . . (Please read the precautions on the back before filling out this page) A7 4 60933 ___ B7_____ 5. In the camera area of the description of invention (Ή). In this way, reduced images of the respective patterns of the target are copied on each imaging region on the wafer w. Here, an example of the pattern arrangement of the mask M and the imaging arrangement on the wafer W will be described. FIG. 2 (A) is a plan view showing an example of a mask M to be copied, FIG. 2 (B) is an enlarged view of part B in FIG. 2 (A), and FIG. 2 (C) is a second view ( B) A cross-sectional view taken along line CC. In FIG. 2 (A), on the pattern area of the mask M, a characteristic pattern group 13 is formed at a predetermined pitch in the X direction and the square direction p, and a pattern area is enclosed in the Υ direction. A calibration mark composed of a pair of 2-dimensional metal films. 14A, 14B. The photomask M is one in which a plurality of characteristic patterns are formed inside a silicon wafer, and a cutout portion 12 for angle detection is formed on an outer peripheral portion thereof. In each characteristic pattern group 13 on the photomask M, as shown in FIG. 2 (B), mutually different characteristic patterns 15A, 15B, 15C, 15C are formed at predetermined pitches in the X direction and the Y direction. As shown in FIG. 2 (C), the portion 17 formed by the r characteristic pattern group 13 in the mask M is thinner than the other regions, and the portion corresponding to the characteristic pattern in the portion Π (electron beam) The passing part) becomes a through hole. The portion 17 may be a thin film of silicon (Si), but the portion Π may be a thin film such as silicon nitride (SiN). As described above, although the mask M of this example is a so-called stencil mask, a so-called scattering in which a film that diffuses an electron beam such as tungsten (W) on a film that penetrates the electron beam may be used. Photomask. In FIG. 2 (B), each characteristic pattern Ί5A to 15Y is formed in a square region of width D, and the boundary between adjacent characteristic patterns is a region where the electron beam does not penetrate or a region where the electron beam is scattered. (Non-patterned area). ^ 23 ------------- install ----- ^-order --------- line (please read the precautions on the back before writing this page) economy The consumer property cooperation of the Ministry of Intellectual Property Bureau Du printed the paper standard applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 4 60933 A7 ----------- The irradiated area 14 formed by the electron beam EB in FIG. 1 on FIG. 2 (B) is a square whose width is only slightly larger than D. Only one characteristic pattern (for example, 15A, etc.) selected from the characteristic pattern group 13 can be used. Complete coverage with illuminated area. In addition, in the different characteristic pattern group 13, different plural numbers are formed. Characteristic patterns. In addition, each of the characteristic patterns 15A to Ί5 'corresponds to the "sub-field of view" of the smallest unit pattern that divides the large original pattern at the time of division and copying. Further, a metal film reflecting electron beams is formed at four corners of the characteristic pattern group 13. The formed two-dimensional (here, cross-shaped) calibration marks 16A to 16D. At this time, for example in section :. 1 picture, driving light. The mask platform 20 sequentially moves the calibration marks 14A and 14B of the second figure (A) on the mask M to the vicinity of the optical axis AX1, and then drives the deflector 7 to scan the electron beam EB in the X direction and the Y direction. The detection signal from the reflected electron detector 37 is processed to detect the coordinates of the calibration marks 14A and 14B, and the center coordinates and rotation errors of the photomask M are calculated based on the detection results. After that, for example, the mask stage 20 is rotated to cancel the rotation error, and based on this, the arrangement coordinates of the characteristic pattern groups 13 on the mask M can be calculated. Then, according to the arrangement coordinates calculated in the above manner, the photomask stage 20 is driven, so that the center of the characteristic pattern group 13 used for exposure in FIG. 2 (A) is positioned approximately in the light of the lighting system in FIG. 1 On the axis AX1. In this state, the deflector 7 is driven to cause the electron beam EB to scan in the X and Y directions to process the detection signal from the reflected electron detector 37 and to detect the calibration marks 16A to 16D in FIG. 2 (B). The coordinates of at least two calibration marks. After that, the coordinates of the calibration marks of the two positions obtained through processing, that is, 24 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) Outfitting ------- Order --------- Line! Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 460933 A7 ____ B7____ 5. Description of the invention (> 1) It is possible to calculate with high accuracy the optical axis AX1 with each characteristic pattern 15A to 15Y in the characteristic pattern group 13 as the origin Arrange the coordinates. Drive the deflector 7 of Fig. 1 according to the arrangement coordinates calculated in the above manner, that is, the electron beam irradiation area 14 can be accurately moved to the desired characteristic pattern among the characteristic patterns 15A to 15Y, and it can penetrate the expectation. The electron beam having the characteristic pattern is vibrated back to the optical axis AX1 through the deflector 25 shown in FIG. 1 with high accuracy. That is, in this example, since the arrangement coordinates of the characteristic patterns 15A to 15Y in each characteristic pattern group 13 are finally obtained based on the positions of the calibration marks 16A to 16D, the positioning of the mask platform 20 in FIG. 1 The precision does not need to be particularly high. 'The width D of the external shapes of the characteristic patterns 15A to 15Y is, for example, about 100 μm to 100 μm. In this example, although the characteristic patterns of 5 rows × 5 columns are formed in each characteristic pattern group 13, each characteristic pattern group may be formed. Characteristic patterns of about 5 rows × 5 columns to 20 rows × 20 columns are formed in 13 respectively. On the other hand, FIG. 3 (A) is a plan view showing the wafer W, FIG. 3 (B) is an enlarged view of the part B in FIG. 3 (A), and in FIG. 3 (A), the wafer W On the surface, a plurality of imaging regions 52 are arranged at predetermined pitches in the X direction and the Y direction, and a circuit pattern of one grain is copied in each imaging region 52. Alternatively, a circuit pattern in which individual crystal grains are duplicated in each imaging region 52 may be used. In addition, in order to enclose the imaging regions 52 in the Υ direction, retrieval calibration marks 53A and 53B composed of a pair of two-dimensional metal films are formed, and cutouts for angle detection are formed on the outer periphery of the wafer W. As shown in Figure 3 (B), each camera area 52 will be copied to a 25 paper size. Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back first) Fill out this page again) l --- Order --------. . Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Online Economics 460933 A7 B7 V. Description of the invention (the smallest unit of the smallest unit of the reduced image of the Wo characteristic pattern, the "exposed areas 54" are closely arranged in the X and Y directions If the reduced image of one characteristic pattern of the projection system PL according to FIG. 1 is set to the reduced image 43 of FIG. 3 (B), the width D of the characteristic pattern outline and the projection magnification of the projection system PL are used. yS, all the images 43 and the sub-exposed areas 54 are square areas with a width of Θ · D. Then, the imaging area 52 is relatively moved in the X direction and the Y direction with respect to the sequentially reduced image 43, and in the imaging area 52. The reduced images of the corresponding characteristic patterns are copied on all the sub-exposure regions 54. If the size of each characteristic pattern on the photomask M is set to 500 μm angle and the response ratio / 3 is 1/10, the imaging on the wafer W is performed. Each of the sub-exposure regions 54 in the region 52 has a 50 μm angle, and the imaging region 52 is, for example, a rectangular or square region having a length of about 20 to 30 mm on one side. In this example, since all the sub-exposures in the imaging region 52 are exposed, The reduced image of the characteristic layer corresponding to the area 54 is reproduced with high efficiency, so the projection system PL is moved or vibrated mechanically as described later. Next, the electron beam small reproduction device of this example will be described with reference to FIGS. 4 to 6. The overall mechanical structure. Figure 4 is a cross-sectional view showing the entire copying device of this example. In this figure, the copying device of this example is arranged in a box-shaped solid frame 60 capable of maintaining the interior in a closed state. The frame 60 is further housed in a larger processing chamber (not shown), and the surrounding of the frame 60 in the processing chamber is supplied with, for example, approximately atmospheric pressure and highly dust-proof dry air. 60, through anti-vibration tables 64A, 64B (actually configured in three or four 26 paper sizes applicable to China National Standard (CNS) A4 specifications (210 X 297 mm)) ----------- ----- Installing --- (Please read the precautions on the back before 4 (write this page). . Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Λ 60933 Α7 Β7 V. Description of the invention (Λ) position) It is mounted on the base member 65, and inside the frame 60, it is divided into: an exposure chamber 66 with particularly high airtightness, The decompression chamber 67 on the mask side used when the mask M is exchanged is a mask storage chamber 68 that communicates with outside air (the gas inside the processing chamber surrounding the housing 60), and is used for wafer W exchange. A wafer-side decompression chamber 69 and a wafer storage chamber 70 communicating with the outside air are used. The decompression chambers 67 and 69 correspond to the preparation room of the present invention. A plurality of exhaust holes are formed on the side wall surrounding the exposure chamber 66 from the upper part to the bottom. These exhaust holes are connected to the vacuum pump 63 through the exhaust pipes 62A to 62E. During exposure, the vacuum chamber 63 The interior is maintained at a high vacuum state, for example, about 10-7 Torr. In addition, a zone partition 93 is provided in a state surrounding the decompression chamber 67 on the photomask side (refer to FIG. 5), and a switch member 76A that is opened and closed by the driving unit 77A is provided at the boundary between the exposure chamber 66 and the decompression chamber 67. A switch member 76B that is opened and closed by the driving section 77B is provided at an interface between the decompression chamber 67 and the mask storage chamber 68. same. A partition plate 94 is provided in a state surrounding the decompression chamber 69 on the wafer side (refer to FIG. 6), and a switch member 86A that is opened and closed by the driving section 87A is provided at the boundary between the exposure chamber 66 and the decompression chamber 69 A switch member 86B that is opened and closed by the drive unit 87B is provided at an interface between the decompression chamber 69 and the wafer storage chamber 70. In addition, the openings at the two positions of the partition walls of the decompression chambers 67 and 69 are connected to exhaust pipes 62F and 62G 'of the vacuum pump 63, respectively, and a solenoid valve with a free switch for taking in ambient gas at any time. Exhaust pipes for 78 and 88. In addition, the decompression chambers 67 and 69 are provided with platforms 79 and 89 for conveying a mask and a wafer, respectively. In addition, in the exposure chamber 66, the closed cover 61 27 on the upper part of the frame 60 is applicable to the Chinese national standard (CNS> A4 specification (210 X 297 mm)) (Please read the precautions on the back before filling this page ) Binding ----: ----. Line, printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 4 60933 ____ Β7 ____ V. Description of the invention (7 L) The electron gun 1 is arranged inside the electron gun 1, and a condenser lens 2, a condenser lens system 5, and a field of view are arranged in order under the electron gun 1. A deflector 7 and a photomask M are used. In order to facilitate understanding of the drawings, components such as the aperture plate 4 in the first figure are omitted in the fourth figure. In addition, the photomask base 21 is fixed to the frame 60, and is provided with a coarse motion platform 73 and a coarse motion platform 23 for driving and holding the photomask platform 20 of the photomask M in a pair of linear directions with respect to the photomask platform 21. The motors 74A and 74B are driven in the Υ direction. In FIG. 4, the measurement system for the mask platform composed of the moving mirror 22 and the laser interference meter 23 on the mask side is actually constituted by the biaxial elements shown in FIG. 5. FIG. 5 is a plan view in which a part of the drive system and measurement system of the photomask platform 20 in FIG. 4 is shown in a cross section. In FIG. 5, the X direction and the y-direction side of the photomask platform 20 are respectively fixed. The X-axis moving mirror 22X and the Y-axis moving mirror 22Y are parallel to the moving mirrors 22X and 22Y on the mask base 21, and reference mirrors 22RX and 22RY are fixed, respectively. Then, the laser interference meter 23 × from the X axis passes through the window member 71 × provided in the frame 60, and the moving mirror 22 × and the reference mirror 22RX are irradiated with a plurality of laser beams and a uniaxial laser beam along the X axis. The laser jammer 23Υ passes through the window member 71Υ provided in the frame 60, and illuminates the multiple and single-axis laser beams along the Υ axis to the moving mirror 22Υ and the reference mirror 22RY. The laser jammer 23 × and _23Υ are With reference to the mirrors 22R and 22RY as the basis, measure the X-coordinates, Υ-coordinates, and rotation angles around the 3 axes of the moving mirrors 22 × and 22Υ (the reticle stage 20). Also, the photomask platform 20 is arranged in a coarse U-shaped coarse motion platform 73. The coarse motion platform 73 is a guide surface 21a substantially parallel to the y axis with respect to the photomask platform 20, and a linear motor 74A, 74B is driven in the Υ direction. 28 This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) Loading ---- l · --- Order ------ --line. Printed clothing by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 6 0 9 3 3 A7 B7 V. Description of the Invention (Clever) In addition, a guide surface 73a substantially parallel to the X axis is formed on the inner surface of the coarse motion platform 73, along the The guide surface 73 a is provided with a guide member 96 ′ slidably disposed with respect to the guide member 96 through a transmission device 95A, 95B ′ which is retractable and retractable at two positions in the γ direction, and a photomask platform 20 is disposed. As the transmission devices 95A and 95B, for example, an electromagnet with an E-shaped magnetic core and a so-called EI magnetic core type non-contact transmission with an E-shaped magnetic core, a non-contact transmission with a Lorentz force as a thrust, or a small In addition, the linear motor 74D is composed of a movable member fixed to the + Υ direction end of the mask platform 20 and a stator fixed to one side of the coarse motion platform 73, and a linear motor 74D is fixed to the guide member '96. Movable member. A linear motor 74C is formed with a stator fixed to the other side of the coarse motion platform 73, and the guide member 96 and the mask platform 20 are driven in the X direction relative to the coarse motion platform 73 by a pair of linear motors 74C and 74D. . Further, by controlling the amount of expansion and contraction of the two-axis transmission devices 95A and 95B, it is possible to control the rotation angle (deflection amount) of the photomask flat 20 relative to the coarse movement platform 73 (photomask base 21). Also ’near the boundary between the exposure chamber 66 and the decompression chamber 67, a decompression chamber. Between the platform 79 in 67 and the mask platform 2Q, a robot arm 75 is provided for maintaining the positional relationship of the mask in a predetermined state for carrying the mask. In addition, a mask storage chamber 68 on the right side of the decompression chamber 67 is provided with a rotary stage 81 for temporarily loading a mask, and position detection devices 82A to 82C of an imaging method are provided around the rotary stage 81. Further, a photomask storage 97 is provided near the opening of the photomask storage room 68 connected to the outside air, and a plurality of photomasks (shown with The uppermost mask MN), the plural characteristic pattern group 29 This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) ^- ---- · 1 --- Order ---------- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 460933 A7 __B7___ V. Description of the invention (> ^) * Formed with photomask M The types of characteristic pattern groups are different. A robot arm 80 is provided between the photomask storage 97 and the rotating platform 81 and the platform 79 in the decompression chamber 67 to maintain the positional relationship of the photomask in a predetermined state. The mask supply system is constituted by the above-mentioned robot arm 75, platform 79, robot arm 80, and the like. At this time, the position detection devices 82A to 82C can detect the positions of the cutouts on the outer periphery of the mask at the position P2 taken out from the mask storage 97 and loaded on the rotating platform 81, and the positions of the edge portions of the other two positions. A rotation error and a two-dimensional position error based on the notch portion of the mask are detected. Therefore, in order to offset the rotation error, the rotating platform 81 is rotated, and in order to offset the two-dimensional position error, the photomask is mounted on the platform 79 in the decompression chamber 67 through the robot arm 80 at position P1, and the platform is then rotated. The mask on 79 passes through the mechanical arm 75 in the exposure display 66 and is mounted on the mask platform 20 in such a way that the rotation angle does not change, that is, the pre-calibration of the mask of the exposure object can be performed. Back to FIG. 4, move the photomask from position P2 on the rotating platform 81 in the photomask storage chamber 68. When entering position P1 on the platform 79 in the decompression chamber 67, the switch member 76A is closed and the switch member 76B is opened, and the photomask is loaded in the position. In the state of P1, the switch member 76B and the solenoid valve 78 are also closed. Then, after exhausting through the exhaust pipe 62F, the inside of the decompression chamber 67 becomes a vacuum state, the switch member 76A is opened, and the photomask is brought into the photomask platform 20 from the position P1. On the other hand, after the exposed mask M on the mask platform 20 is carried out to the platform 79 in the decompression chamber 67, the switch members 76A and 76B are closed, and the solenoid valve 78 is opened to make the decompression chamber 67 become atmospheric pressure 30. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) --Line ~ 'Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economics Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economics Printed by 460933 A7 _______B7______ 5. After the description of the invention (price), open the switch member 76B and put the photomask on the platform 79 back The mask storage compartment 97 in the mask storage chamber 68 (refer to FIG. 5). As described above, since the decompression chamber 67 is provided in this example, the mask can be quickly exchanged between the vacuum exposure chamber 66 and the atmospheric pressure mask storage chamber 68. Next, under the photomask base 21 in the exposure chamber 66, a deflector 25 for vibration return, a projection system PL, and a wafer W are sequentially disposed, and passed through the lens barrel 31 and the plate springs 32A and 32B (see FIG. 1). The support members 57A and 57B of the projection system PL are stably fixed to the frame 60. The wafer W is held on the wafer platform 46 through the wafer holder 98, and the wafer platform 46 is mounted in a 2-dimensional freely moving manner. Crystal base. 47 on. The wafer base 47 is fixed on the bottom surface of the frame 60. A coarse motion platform 83 for driving the wafer platform 46 is arranged on the wafer base 47. The coarse motion platform 83 is opposite to the wafer base 47. A pair of linear motors 84 A and 84B are driven in the Y direction. In FIG. 4, the wafer platform measurement system composed of the moving mirror 48 and the laser interference meter 48 on the wafer side is actually constituted by the biaxial elements shown in FIG. 6. FIG. 6 is a plan view in which a part of the drive system and the measurement system of the wafer platform 46 in FIG. 4 is shown in a cross-section. In FIG. 6, the X-direction and Y-direction sides of the wafer platform 46 are respectively fixed. The X-axis moving mirror 48X and the Y-axis moving mirror 48Y are parallel to the moving mirrors 48X and 48Y on the wafer base 47, and reference mirrors 48RX and 48RY are fixed, respectively. Then, the laser interference meter 49X from the X axis passes through the window member 72X provided in the frame 60, and the moving mirror 48X and the reference mirror 48RX are irradiated with a plurality of laser beams and a uniaxial laser beam along the X axis. The laser jammer 49Y passes through the window structure 31 of the frame 60. This paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) --- -l · --- Order --------- line-Industrial Cooperative Co., Ltd. of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 6 0 9 3 3 Α7 Β7 V. Description of the Invention 0D) Piece 72Y, 48Y for moving mirror And reference mirror 48RY, which irradiates multiple and single-axis laser beams along the Y axis, and the laser jammers 49X and 49Y use the reference mirrors 48R and 48RY as the reference to measure the moving mirrors 48X and 48Y (wafer platform 46). X coordinate, Y coordinate and rotation angle around 3 axes. The wafer stage 46 is arranged in a coarse U-shaped stage 83 in a horizontal U-shape. The coarse stage 83 is a guide surface 47a substantially parallel to the Y axis with respect to the wafer stage 46, and a linear motor 84A, 84B is driven in the Y direction. In addition, a guide surface 83a that is substantially parallel to the X axis is formed on the inner surface of the coarse movement platform 83. A guide member 100 is slidably arranged along the guide surface 83a. The transmission devices 99A and 99B in the two directions are provided with the wafer stage 20. Also, similar to the mask stage 20 in FIG. 5, the wafer stage 46 and the guide member 100 in FIG. 6 are guided along the guide surface with respect to the coarse movement stage 83 by a pair of linear motors 84C and 84D. 83a is driven in the X direction. Further, by controlling the amount of expansion and contraction of the two-axis transmission devices 99A and 99B, it is possible to control the rotation angle (deflection amount) of the circular platform 46 relative to the coarse motion platform 83 (wafer base 47). In addition, near the boundary between the exposure chamber 66 and the decompression chamber 69, a wafer 89 is provided between the platform 89 in the decompression chamber 69 and the wafer platform 46 to maintain the positional relationship of the wafer in a predetermined state. The round transport & machine #arm 85 〇 In addition, the wafer storage room 70 on the right side of the decompression chamber 69 is provided with a rotating platform 91 for temporarily loading wafers, and a surrounding of the rotating platform 91 is provided. Position detection devices 92A to 92C. Further, there is a crystal 32 near the opening of the wafer storage room 70 connected to the outside air. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm); -: ---- Order ----- J ------ line '> V. ·. / (Please read the notes on the back before writing this page) 460933 A7 B7 V. Description of the invention (Yh 101, the wafer cassette 101 contains exposed or unexposed wafers (the uppermost wafer is shown) MN). A robot arm 90 is provided between the wafer cassette 101 and the rotating platform 91 and the platform 89 in the decompression chamber 69 to maintain the positional relationship of the wafers in a predetermined state for wafer transfer. The arm 85, the platform 89, the robot arm 90, etc. constitute a wafer feeding system. In addition, the wafer storage chamber 70 is also taken out from the wafer cassette 101 by the position detection devices 92A to 92C, similarly to the photomask storage chamber 68. The position of the notch in the outer periphery of the wafer and the position of the edge of the other two positions at the position P4 mounted on the rotating platform 91 are used to calculate the rotation error and the two-dimensional position error. Then, in order to offset the rotation error and the position error After loading the wafer at position P3 on the platform 89 in the decompression chamber 69 through the robot arm 90, the wafer on the platform 89 is transmitted through the robot arm 85 in the exposure display 66 and loaded on the wafer holder 98. Pre-calibration Returning to FIG. 4, when the wafer is moved from the position P4 in the wafer storage chamber 70 to the position P3 in the decompression chamber 69, the switch member 86A is closed and the switch member 86B is opened, and the wafer is loaded at the position In the state of P3, the switch member 86B and the solenoid valve 88 are also closed. After the vacuum state in the decompression chamber 69 is reached, the switch member 86A is opened to carry the wafer from the position P3 to the wafer holder 98. On the other hand, After the exposed wafer E on the wafer platform 46 is carried out to the platform 89 in the decompression chamber 69, the switch members 86A and 86B are closed, and the solenoid valve 88 is opened to bring the pressure in the decompression chamber 69 to atmospheric pressure, and then the switch member is opened. 86B returns the photomask on the platform 89 to the wafer cassette 101 in the wafer storage chamber 70 (refer to FIG. 6). As mentioned above, since this example 33, this paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling out this page) Packing ----- • Painting --- Ordering --------- Line · Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 460933 _ B7 _ 5. The decompression chamber 69 is provided in the description of the invention (yi), so it can be used in a vacuum state. The wafer exchange is performed quickly between the exposure chamber 66 and the atmospheric pressure wafer storage chamber 70. The wafer supply system (the same as the mask supply system) is divided into a supply system and an unloading system. It is also possible to shorten the wafer (mask) exchange time. For example, in Figure 6, at least two wafer platforms 46 may be arranged to perform the next wafer while exposing one wafer. Various operations such as round feeding, calibration, etc. In addition, in order to copy the mask pattern on the second and subsequent layers of each imaging area on the wafer, the mark detection system detects multiple calibration marks on the wafer. According to the detection result, the sub-exposure area in each imaging area on the wafer and the reduced image of the corresponding sub-field of view on the photomask are correctly positioned. This mark detection system uses an electron beam to detect the detected mark in this example, but an optical mark detection system may be used instead. Next, with reference to FIGS. 7 to 11, a specific configuration example of the drive system 34 that drives the projection system PL machine in the Υ direction in FIG. 1 and the operation of the mechanical MOL method and the electronic MOL method in this example will be described. An example. FIG. 7 is a partially cut-away enlarged perspective view showing an example of the deflector 7 to the wafer W used for the field of view selection in FIG. 1. In FIG. 7, the characteristic pattern group 13 of the exposure object on the photomask M is shown in FIG. 7. The center is approximately the same as the optical axis AX1 of the lighting system. In addition, by detecting the positions of at least two calibration marks in the calibration marks 16A to 16D in FIG. 2 (B), the optical axis AX1 of the characteristic patterns 15A to 15Υ in the square area of each width D in the characteristic pattern group 13 is The arrangement coordinates of the origin are regarded as high-precision seekers. In FIG. 7, for example, when the reduced image of the characteristic pattern 15N on the photomask M is within a single imaging area 52 on the wafer W, the deflector 7 is used to apply the Chinese national standard (/ 34 scale). CNS) A4 size (210 X 297 mm) (Please read the precautions on the back before filling out this page) Installation ------ r --- Order ί. --- line. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by the Consumer Cooperative of the Ministry of Economic Affairs of the Ministry of Economic Affairs. The electron beam EB penetrating the characteristic pattern 15N is accurately moved to the optical axis AX1 by the deflector 25 used for vibration. In the state shown in Fig. 7, the optical axis AX1 of the illumination system and the optical axis 8 and 2 of the projection system PL are the same. Then, move to the electron beam EB on the optical axis Yoshiyoshi 1, and use a projection system PL formed by the lenses 28A, 28B, etc., in one of the square sub-exposure areas 54 constituting the majority of the imaging area 52 (each width * D). In the sub-exposure area, a reduced image 43 of a reduction pattern 15N at a projection magnification / 3 is formed. In addition, the projection system PL is housed in the lens barrel 31, and the lens barrel 31 is held by a pair of plate springs 32A and 32B held in the Y direction, and both ends of the plate springs 32A and 32B in the X direction are fixed to the support. Component 57A, 57B. Therefore, the projection system PL system is supported by the plate springs 32A and 32B so as to be capable of displacement and vibration in the Y direction. 'And, on the Y-direction surfaces of the plate springs 32A and 32B, the expansion and contraction made of piezoelectric elements is fixed by means of adhesion, etc., and the driving elements 111A, 111B, 112A, and 112B are freely arranged on the plate. The springs 32A and 32B in the + Y direction are also opposed to the driving elements 111A, 111B, 112A, and U2B, respectively, and are fixed with elastic driving elements 111C, 111D, 112C, and 112D made of piezoelectric elements. In addition, as the driving elements 111A to 111D and 112A to 112D, in addition to a piezoelectric element, an electrostriction element or a magnetostriction element can be used. In this example, a control unit (not shown) is used. By using a set of drive elements 111A, 111B, 112A, and 112B and another set of drive elements 111C, 111D, 112C, and 112D, the phases are reversed from each other for a certain period Telescopic, the entire PL of the projection system vibrates parallel to the Y-axis 35 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) --------------,- -— ^ ---- Order --------- Line ·: (Please read the notes on the back before «: Write this page） A7 460933 ______B7_______ 5. Direction of the invention ΠΥ) (Y direction) . That is, the mechanical vibration direction MV of the projection system PL is the Y direction. The driving elements 111A to 111D '112A to 112D and the control system correspond to the driving system 34 of Fig. 1. Fig. 8 shows the relationship between the expansion and contraction states of the driving elements 111A to 111D and 112A to 112D and the displacement of the projection system PL (lens barrel 31). First, as in Fig. 8 (A), when the driving elements expand and contract When the amount is 0, the projection system PL does not shift. Contrary to this, as shown in FIG. 8 (B), when one set of driving elements 111A, 111B, 112A, and 112B contract, and the other set of driving elements 111C, 111D, 112C, and 112D are extended, the leaf springs 32A and 32B move toward The + Y direction is bent, and the projection system PL is also displaced in the + Y direction (direction MVA). On the other hand, as shown in FIG. 8 (C), when one set of driving elements 111A, 111B, 112A, 112B is stretched, and the other set of driving elements 111C, 111D, 112C, 112D is contracted, the leaf springs 32A, 32B are directed toward one The Y direction is bent, and the projection system PL is also displaced in a Y direction (direction MVB). As described above, the projection system PL can be vibrated in the Y direction by expanding and contracting the two sets of driving elements at a certain period (a certain frequency) in a state where the phases are reversed from each other. In addition, by controlling the maximum expansion and contraction of the two sets of driving elements, it is possible to control the amplitude when the projection system PL vibrates. In FIG. 7, a moving mirror 40 composed of a mirror is fixed to the side of the −Y direction of the lens barrel 31. The mirror has a reflecting surface substantially parallel to the ZX plane, and is arranged substantially parallel to the moving mirror 40. Reference mirror 40R. The reference mirror 40R is fixed to a support member (not shown) so as not to be displaced relative to the support members 57A and 57B. Then, the laser jammer 41 fixed to the supporting member irradiates the laser beam of 3 axes to the moving mirror 40, 36 (Please read the precautions on the back before filling this page) Order --------- line — The paper size printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs is applicable to the Chinese national standard ^ (CNS) A4 (21〇χ 297 mm) ^ 60933 A7 ______B7_ V. Invention The reference mirror 40R is irradiated with, for example, a uniaxial laser beam, and the laser jammer 41 uses the reference mirror 40R as a reference to measure the Y direction of the moving mirror 40 and the lens barrel 31 (projection system PL) at a predetermined sampling frequency. The amount of displacement, the rotation angle around the X axis, and the rotation angle around the X axis. This measurement 値 is continuously supplied to the control system of the driving elements 111A ~ 111D, 112A ~ 112D. This control system controls the expansion and contraction of the driving elements 111A ~ 111D, 112A ~ 112D according to the measurement 値, and the lens barrel 31 and projection The system PL vibrates in a mechanical vibration direction MV at a predetermined amplitude and a predetermined frequency in a state where it is not rotating. As described above, in this example, the laser jammer 41 is used to measure the displacement and rotation angle of the projection system PL and feed the measurement back to the drive system. Therefore, the entire projection system PL can be moved to the Y direction by the mechanical MOL method. Stable vibration. In addition, in order to monitor the displacement amount of the projection system PL, at least one side of the leaf springs 32A and 32B is covered with a strain gage measuring element such as a strain gage, and the leaf spring 32A and 32B are directly measured with the telescopic amount measuring element. The amount of stretching is also possible. Further, in order to monitor the displacement amount of the projection system PL, a non-contact electrostatic capacity sensor or an optical gap sensor may be used. In the embodiment shown in FIG. 7, one pair of plate springs 32B (the same applies to 32A) is covered with two pairs of driving elements 111A to 111D. However, three or more pairs of driving elements may be used, for example, on the plate spring 32A. Four pairs of driving elements covering two columns in the Z direction are covered. This makes it possible to increase the amplitude of the projection system PL. For example, when the telescopic characteristics of the driving element 111A is improved, a plate spring 32A (the same applies to 32B) may cover a pair of driving elements, or may cover only one driving element. 37. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling in this page) Installation I — III Order — 丨 --- ^, Economic Printed by the Ministry of Intellectual Property Bureau ’s Consumer Cooperatives 4 60933 A7 B7 Printed by the Ministry of Economic Affairs ’Intellectual Property Bureau ’s Consumer Cooperatives. 5. Description of the Invention (w) As mentioned above, the projection of this example is the mechanical drive system of the PL. It is a free driving element, but other than that, for example, a voice coil motor or a linear motor may be used to mechanically displace the projection system PL. FIG. 9 shows a configuration example of a mechanical drive system for driving the projection system pl by a voice coil motor method. In FIG. 9, the lens barrel 31 for storing the projection system PL is housed by the plate springs 32A and 32B. While being held, the leaf springs 32A and 32B are fixed to the support members 57A and 57B. In addition, cylindrical members 113A and 113B made of a non-magnetic body are fixed to the outer surfaces of the plate springs 32A and 32B, respectively, and wire coils 114A and 114B are wound around the front ends of the cylindrical members 113A and 113B. Also, the inside of the cylindrical members 113A, 113B is in a non-contact state. The permanent magnets 115A and 115B are inserted as magnets, and the cylindrical members 113A and 113B are wrapped in a non-contact state on the permanent magnets 115A and 115B. The magnetic yokes 116A and 116B having cylindrical front ends are fixed. . The permanent magnets 115A and 115B and the yokes 116A and 116B are fixed to a support member (not shown) so as not to be relatively displaced relative to the support members 57A and 57B. . The coils 114A and 114B, the permanent magnets 115A and 115B, and the yokes 116A and 116B constitute a voice coil motor (VCM). At this time, by the current flowing through the coils 114A and 114B, in the direction of the flexibility of the leaf springs 32A and 32B, that is, in the same direction of the mechanical vibration direction MV in the same direction as the coils 114A and 1Ί4B, a Lorentz force is generated. The thrust of composition. Accordingly, the leaf springs 32A and 32B bend in this direction and the lens barrel 31 (projection system PL) is also displaced. At this time, for example, the coils 114A and 114B supply an alternating current with a predetermined amplitude at a predetermined frequency, that is, 38 ------------ II-III l · III * — — — —! — — — 4 > (Please read the precautions on the back before filling out this page) This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) 4 60933 A7 ___; _ B7_____ r \ V. Description of the invention (,) Can The projection system is vibrated at the predetermined frequency and the predetermined amplitude along the vibration direction MV. 'In this case, in order to monitor the displacement of the lens barrel 31 (projection system PL), the inner surfaces of the plate springs 32A and 32B are respectively covered with the expansion and contraction measuring elements 127A and 127B composed of strain gauges, and the expansion and contraction amounts When the measuring element drives the sound beam 圏 motor, the projection system PL can be vibrated with high precision. In the example shown in Fig. 9, in order to monitor the displacement of the lens barrel 31, a laser jammer or the like may be used. In addition, the sound coil motor method can stabilize the projection system PL by a desired amount of high-accuracy displacement in the vibration direction MV. Returning to FIG. 7, the basic operation when one or more characteristic patterns on the mask M are sequentially copied in the imaging region 52 on the wafer W will be described with this example. In this example, the driving elements 111A to 111D and 112A to 112D are extended and contracted to bend the leaf springs 32A and 32B in the direction of Υ, so that the projection system PL vibrates at a predetermined frequency and a predetermined amplitude in the vibration direction MV in the Υ direction. In this way, the reduced images of the corresponding characteristic patterns on the corresponding mask M are copied on one row of the sub-exposure areas 54 in the main exposure area 110A of the imaging area 52 on the crystal wafer W in the L direction. The width L1 is, for example, about 10 to 30 times the width d of the sub-exposed area 54. However, in FIG. 7, the width L1 is set to 9 times the width d for easy understanding. Fig. 10 shows the state where the projection system PL is vibrated in the Y direction. In this Fig. 10, Fig. 10 (A) is the optical axis AX2 of the projection system PL-caused by the optical axis AX1 of the lighting system and on the mask M The reduced image of the projection pattern PL of the characteristic pattern 15B is exposed on the sub-exposure region 54A on the wafer W. Secondly, as shown in Figure 10 (B), the electron beam 39 passing through the characteristic pattern 15C on the mask M 39 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read first Note on the back, please fill out this page) ---- l · I--Order · I ------- Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 460933 Printed by A7 __ ^ _ B7_____ V. Description of the invention (彳) With the EB vibrating back on the optical axis AX1, the projection system PL is shifted by Ayl in the direction MVA (+ Y direction). At this time, if the projection system PL of this example is assumed to be an inverted projection system composed of the front group 27 and the rear group 29, a projection magnification of 3 (0 < 丨) Reduction The amount of displacement ΛΥ1 in the direction of + Υ of the image is as follows. △ Υ1 = (1 + Θ) ΔΥ1-(1) Therefore, by making the displacement amount AY1 the width d (arrangement pitch) of the sub-exposure region 54 on the wafer W, the reduced image of the characteristic pattern 15C can be exposed A sub-exposure region 54B adjacent to the sub-exposure region 54A on the wafer W. Similarly, as shown in Section 10_ (C), if a reduced image of the characteristic pattern 15A on the photomask M is to be exposed on the wafer W to the sub-exposure region 54C adjacent to the sub-exposure region 54B, penetration will occur. In a state where the electron beam EB of the characteristic pattern 15A is vibrated back to the optical axis AX1, the displacement amount Δγ2 (= (1 + / 3) Ay2) of the reduced image of the displacement amount Ay2 in the direction of the projection system PL is 2 · D. But 'as in Fig. 10 (A), (B), (0), if it is assumed that the bit p amount of the reduced image using the projection system PL is 0, the time point of ΔΥ1, Aγ2 is t1, and the time point of t2, t3 is t1, If the minimum value of the interval between t2 and t3 is τ, when the sensitivity of the electron beam photoresist on the wafer W is high (the required amount of light is small), only the time point is t1, and t2, t3 is the center. The exposure time is much shorter than the interval T.) The deflector 3 for shielding in Fig. 1 is used as a non-operation state. By irradiation on the photomask M but the beam eb is required, the reduced images of the corresponding characteristic patterns can be respectively The different sub-exposed regions 54A, 54B, and 54C on the crystal pattern w are exposed. At this time, for example, the electrons 40 are caused by the layers on the wafer w.

本紙張尺度適用中國國家標準（CNS)A4規格（210 X ------------裝---I l·---訂---------線1 1 -,'、 (請先閱讀背面之注意事項再填寫本頁) A7 ^60933 B7 —...... 11 " " 五、發明說明（τ/) 束光阻劑之感度有某種程度之變化時，根據該感度控制第 1圖之電子鎗1之輸出，亦即但須束ΕΒ之強度亦可。亦即，當電子束光阻劑之感度略低（適當正確之曝光量略大）時提高電子束ΕΒ之強度’電子束光阻劑(適當正確之曝光籩略小)時降低電子束ΕΒ之強度亦可。此曝光量之控制方法，在能將電子束之強度於既定範圍內高精度、且安定的控制時有效’據此，能容易地進行曝光量控制。相對於此，例如在晶圓W上之電子束光阻劑之感度較低(適當正確之曝光量較大)時，以該時點t1，t2，t3爲中心之曝光時間At2，雖較間福T爲短，但有接近該間隔T之虞。此時，若僅以曝光時間將電子束ΕΒ照射至光罩 Μ上的話，由於晶圓W上之縮小像會向Y方向移動，因此複製於副曝光區域54Α〜54C之像的解像度有可能劣化。因此，本例中在投影系PL向Υ方向移動之際，爲了將晶圓W上之縮小像分別靜止於各副曝光區域54Α〜54C上，係適用電子MOL方式使投影系PL之光軸電子性的位移。此處，爲了便於說明，將投影系PL之初期狀態（以電子 MOL方式使光軸位移前之狀態)下的光軸設爲光軸ΑΧ2, 將以電子MOL方式使之位移後的光軸稱爲光軸ΑΧ3(參照第11圖）。然後，例如假設在第1〇圖(Β)中以時點t2爲中心，僅以曝光時間At2,將特性圖案15C之縮小像曝光於晶圓… 上之副曝光區域54B的話，首先時點(t2—^12/2)，如第 11圖(A)所示般，以電子MOL方式使前群27及後群29之 41 本紙張尺度適用中國國家標準（CNS)A4規格(210 X 297公髮） ί請先閱讀背面之注意事項再填寫本頁) 袭 --1---訂---------. 經濟部智慧財產局員工消費合作社印制农經濟部智慧財產局員工消費合作社印製 4 6 0 9 3 3 A7 __ B7 五、發明說明（4d) 電磁場自以點線27A及29A所示之初期狀態變化，使光 AX3相對於初期狀態之光軸AX2向+ Y方向位移。據此，縮小像即自點線之軌跡117A移動至實線之軌跡，將該縮小像複製於副曝光區域54B。此時之光軸AX3之位移量<5y，與縮小像在晶圓W上之位移量δ Y的關係’亦能以和式（1) 相同之下式表示。 (5 Y=(l+ ,5)(5 y --(2) 因此，若光軸AX2與副曝光區域54(曝光對象區域)之中心的位置偏差量爲5Ya的話，只要使採用電子MOL方式之光軸AX3的位移量Sy爲下式即可。. δγ=δΥΆ /(1+ β) ...(3) 之後，逐漸的減少光軸AX3之相對於光軸AX2的位移量，顯示時點t2之第11圖⑻中，即使光軸AX3與光軸 AX2 —致。之後，由於光軸AX2相對於副曝光區域54向 + Y方向偏移，因此如第11圖(C)所示’以電子MOL方式使前群27及後群29之電磁場(光軸AX3)相對於以點線27A 及29A所示之初期狀態(光軸AX2)向-Y方向位移。據此，縮小像即自點線之軌跡117B移動至實線之軌跡，將該縮小像複製於副曝光區域54B。如上述般，以各時點tl、t2、t3…爲中心之曝光時間△ t2中，藉由以電子MOL方式使以投影系PL之電磁場分佈所定之光軸AX3位移，即能於沿晶圓W上之機械性振動方向MV之一列.副曝光區域54A、54B、54C…上，將分別對應之特性圖案的縮小像以高解像度分別加以複製。又， 42 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------1 裘·----·1---訂---------^ r -----、 ....I... (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 460933 A7 ___ B7 _ 五、發明說明（Ψ|) 在光阻劑感度更爲降低而使曝光時間At2成爲各時點之最小間隔T以上時，亦可降低投影系PL之機械性振動頻率以使該間隔T變長。相反的，若光阻劑感度較高而使曝光時間Δΐ2較短時，亦可提高投影系PL之機械性振動頻率。進一步的，將投影系PL之機械性振動頻率的控制，與電子束ΕΒ之強度的控制加以組合以進行曝光光量控制亦可〇又，本例如後述般，以電子MOL方式對晶圓W上之縮小像的位置亦進行X方向之修正。回到第7圖，如上述.般本例係以機械MOL方式使投影系PL向Υ方向振動，且以電子MOL方式修正縮小像43 之位置，即能於Υ方向寬度L1之主曝光區域110Α中排列於Υ方向之一列寬度d之副曝光區域54 ’複製所對應之特性圖案的縮小像。而，爲了對該主曝光區域U0A內順序一列之副曝光區域54所對應之特性圖案的縮小像進行曝光’ 本例係與該投影系PL之朝向Y方向振動動作同部的，以既定速度連續的憐晶圓w向與Y方向直交之X方向移動。亦即，相對於投影系PL於+ X方向掃瞄晶圓W。因此，晶圓W之掃瞄方向MSA爲+ X方向，掃瞄方向MSA與投影系PL之機械性振動方向直交。此時，假設使投影PL沿振動方向MV振動時之頻率爲fMOL、週期爲ΤΜ(3ΐΧ=ΐ/ίΜ(Κ) ’本例由於係在1週期TMOL 之間進行對二列副曝光區域54的曝光’須在1週期TMCU之間使晶圓W沿掃瞄方向MSA移動副曝光區域54寬度之二 43 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐〉 -------------裝-----K---訂---------線，、 (請先閱讀背面之注意事項再#寫本頁) A7 460933 _____Β7_____ 五、發明說明（Ρ) 倍的2 · d。因此，晶圚W之相對掃瞄方向MSA之掃瞄速度Vw，如下。This paper size applies to China National Standard (CNS) A4 specifications (210 X ------------ install --- I l · --- order --------- line 1 1 -, ', (Please read the notes on the back before filling this page) A7 ^ 60933 B7 —...... 11 " " V. Description of the invention (τ /) The sensitivity of the beam resist When the degree changes, the output of the electron gun 1 in Fig. 1 is controlled according to the sensitivity, that is, the intensity of the beam eb is also required. That is, when the sensitivity of the electron beam photoresist is slightly lower (the appropriate and correct exposure is slightly larger) ) To increase the intensity of the electron beam Ε ′ when the electron beam photoresist (a proper and correct exposure is slightly smaller) can also reduce the intensity of the electron beam EB. This exposure control method can reduce the intensity of the electron beam to a predetermined range. It is effective for high-precision and stable internal control. 'According to this, the exposure amount can be easily controlled. On the other hand, for example, the sensitivity of the electron beam photoresist on the wafer W is low (a proper and correct exposure amount is large) ), The exposure time At2 centered at the time points t1, t2, and t3 is shorter than the interval T, but it may be close to the interval T. At this time, if only the exposure time When the sub-beam EB is irradiated onto the mask M, the reduced image on the wafer W moves to the Y direction, so the resolution of the image copied in the sub-exposure regions 54A to 54C may deteriorate. Therefore, in this example, the projection system When PL is moved in the Υ direction, in order to keep the reduced image on the wafer W at each of the sub-exposure regions 54A to 54C, the optical MOL method is used to electronically shift the optical axis of the projection system PL. Here, in order to It is easy to explain that the optical axis in the initial state of the projection system PL (the state before the optical axis is shifted by the electronic MOL method) is set to the optical axis AX2, and the optical axis after the electronic axis is shifted is referred to as the optical axis AX3 (Refer to FIG. 11) Then, for example, in FIG. 10 (B), assuming that the time point t2 is the center and only the exposure time At2 is used, the reduced image of the characteristic pattern 15C is exposed on the sub-exposure region 54B on the wafer ... Then, at the first time point (t2— ^ 12/2), as shown in Figure 11 (A), the front group 27 and the rear group 29 of 41 are electronically MOLed. The paper size is in accordance with China National Standard (CNS) A4. (210 X 297) ί Please read the notes on the back before filling in this page) --1 --- Order ---------. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the Consumer Cooperatives of the Smart Property Bureau of the Ministry of Agriculture and Economics 4 6 0 9 3 3 A7 __ B7 V. Inventions Explanation (4d) The electromagnetic field changes from the initial state indicated by the dotted lines 27A and 29A, so that the light AX3 is displaced in the + Y direction relative to the optical axis AX2 of the initial state. Accordingly, the reduced image is moved from the track of the dotted line 117A to the track of the solid line, and the reduced image is copied to the sub-exposure area 54B. The relationship between the displacement amount <5y of the optical axis AX3 at this time and the displacement amount δ Y of the reduced image on the wafer W 'can also be expressed by the following formula, which is the same as the formula (1). (5 Y = (l +, 5) (5 y-(2) Therefore, if the position deviation between the optical axis AX2 and the center of the sub-exposed area 54 (exposure target area) is 5Ya, only the electronic MOL method is used. The displacement Sy of the optical axis AX3 may be the following formula: δγ = δΥΆ / (1+ β) ... (3), then gradually reduce the displacement of the optical axis AX3 relative to the optical axis AX2, and display the time point t2 In Fig. 11 (i), even if the optical axis AX3 is the same as the optical axis AX2. After that, since the optical axis AX2 is shifted in the + Y direction with respect to the sub-exposure region 54, as shown in Fig. 11 (C), The MOL method shifts the electromagnetic fields (optical axis AX3) of the front group 27 and the rear group 29 to the -Y direction with respect to the initial state (optical axis AX2) shown by the dotted lines 27A and 29A. According to this, the reduced image is from the dotted line The trajectory 117B is moved to the trajectory of the solid line, and the reduced image is copied to the sub-exposure region 54B. As described above, the exposure time Δt2 centered at each time point t1, t2, t3, ... is made by the electronic MOL method. The displacement of the optical axis AX3 determined by the electromagnetic field distribution of the projection system PL can be in a row along the mechanical vibration direction MV on the wafer W. The sub-exposure areas 54A, 54B, 54C ... The reduced images of the corresponding characteristic patterns are reproduced with high resolution. 42 paper sizes are applicable to China National Standard (CNS) A4 (210 X 297 mm) ------------ 1 Qiu -------- 1 --- Order --------- ^ r -----, .... I ... (Please read the precautions on the back before filling this page ) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 460933 A7 ___ B7 _ V. Description of the Invention (Ψ |) When the sensitivity of the photoresist is further reduced and the exposure time At2 becomes above the minimum interval T of each time point, it can also be reduced. The mechanical vibration frequency of the projection system PL makes the interval T longer. Conversely, if the sensitivity of the photoresist is high and the exposure time Δΐ2 is short, the mechanical vibration frequency of the projection system PL can also be increased. Further, It is also possible to combine the control of the mechanical vibration frequency of the projection system PL with the control of the intensity of the electron beam EB to control the exposure light amount. In addition, as described later, the electronic MOL method is used to reduce the reduced image on the wafer W. The position is also corrected in the X direction. Return to Figure 7, as described above. This example uses the mechanical MOL method to make the projection system PL to It vibrates in the Υ direction and corrects the position of the reduced image 43 by the electronic MOL method, that is, in the main exposure area 110A of the 宽度 direction width L1, the sub-exposure areas 54 ′ which are arranged in a row with a width d in the Υ direction can be copied. Reduce the image. In order to expose the reduced image of the characteristic pattern corresponding to the sub-exposure area 54 in a row in the main exposure area U0A, this example is the same as that of the projection system PL in the Y direction. The wafer w, which is continuous at a predetermined speed, moves in the X direction orthogonal to the Y direction. That is, the wafer W is scanned in the + X direction with respect to the projection system PL. Therefore, the scanning direction MSA of the wafer W is + X direction, and the scanning direction MSA is orthogonal to the mechanical vibration direction of the projection system PL. At this time, it is assumed that the frequency when the projection PL vibrates in the vibration direction MV is fMOL, and the period is TM (3ΐ × = ΐ / ίΜ (Κ) 'In this example, the two-column sub-exposure area 54 Exposure 'must move the wafer W along the scanning direction MSA in the scanning direction between 1 cycle of the TMA. The width of the secondary exposure area 54 is the second 43. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm> ---- ---- --------- Installation ----- K --- Order --------- line, (Please read the notes on the back before #writing this page) A7 460933 _____ Β7 _____ 5 2. Description of the invention (P) is 2 · d. Therefore, the scanning speed Vw of the crystal W in the relative scanning direction MSA is as follows.

Vw=2 · (1/Tm〇l …(4) 然後，在結束對主曝光區域110A之曝光後，將晶圓 W向Υ方向步進移動間隔L1之後，與機械MOL方式使投 - ·. " ‘..u. ..··.... ·.· ·· --·» · -·-· i.·...： , v d 影系PL向Y方向之振動同步地將晶圓w向一 x方向掃瞄，據以在鄰接之主曝光區域110B內依序曝光對應之特性圖案的縮小像。以下，在鄰接之主曝光區域110C、…中亦依序反轉晶圓W之掃猫方向同時進行曝光，即能在攝像區域 52之全面複製作爲目標之電路圖案的像。. 此時’設特性圖案15Α〜15Υ之外形的寬度D爲500// m左右、投影系PL之投影倍率沒爲1/10的話，晶圓W 上之副曝光區域54之寬度d爲50//m左右。再者，若設主曝光區域110A之Y方向寬度L1，爲副曝光區域54之寬度 d之20倍的話，寬度L1爲2mm(±lmm)左右。因此，若採用⑴式，則以機械MOL方式使投影系PL向Y方向振動時之振幅的最小値約爲Ll/(1+ /5)、亦即約爲1.82mm。此時，投影系PL之物體面側有效視野之寬度大致在(D + L1/ (1+ /3))以上即可。亦即，該有效視野爲直徑2.3mm左右以上之圓形區域即可。又，實際上爲了使其具有餘裕，使投影系PL之振幅爲其最小値之約1.2倍〜1.6倍，僅在其內之晶圓表面寬度L1之範圍內進行特性圖案之縮小像的複製亦可。又，以機械MOL方式使投影系PL向Y方向振動時之 44 紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再氣寫本頁) 裝-----„----訂·--------線經濟部智慧財產局員工消費合作社印製 460933 A7 B7 五、發明說明（Μ) 頻率fM〇L，例如爲40〜60Hz左右。此時之振動方式，使投影系PL對時間成正弦波狀振動者在安定性上較佳。然而，如後述般自容易進行以電子MOL方式修正X方向之複製位置時之控制的觀點來看，使投影系PL對時間成大致三角波狀振動亦可。具體而言，使頻率fM(u爲50Hz(週期 Tm〇l爲20msec)、副曝光區域之寬度d爲50/zm的話，則晶圓W之對.+ X方向之掃猫速度Vw，根據⑷式爲5mm/sec 〇其次，對使用本例第1圖之縮小複製裝置，以特性圖案複製方式於晶圓上一個攝像區域複製既定圖案之動作的 —例，參照第12〜13圖加以說明。第12(A)圖，係顯示曝光對象之光罩Μ圖案配置之一例，該第12(A)圖中，作爲光罩Μ上之特性圖案群13Α內之特性圖案15Α〜15Υ，形成有以符號Α1〜Υ1所示之圖案，作爲其他特性圖案群13Β、13C、13D內之特性圖案15Α 、…亦分別形成有以符號Α2、…，A3、…，及Α4、…所示之圖案。此時，在光罩Μ上使電子束之照射區域14沿軌跡118相對移動，據以將特性圖案群13Α內圖案Bl、C1 、…之縮小像依序複製於第12(B)圖之晶圓W上攝像區域 52內之寬度L1、長度爲L5之主曝光區域110Α內之副曝光區域54Α、54Β、54C、…。因此，如參照第7圖之說明般，第一階段以機械MOL方式使投影系PL向振動方向 MV(Y方向)振動，與使縮小像43之振動同步地’使晶圓W 掃瞄於沿+ X方向之掃瞄方向MSA。 45 本紙張尺度適用十國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝訂.----I---線經濟部智慧財產局員工消費合作社印製 460933 A7 B7 五、發明說明（中士）若設此時投影系PL之振動係對時間成正弦波狀進行，則對晶圓W上主曝光區域110A之縮小像43之中心的相對軌跡，即成爲如第13(A)圖實線軌跡119般的正弦波狀。又，第12〜14圖中，爲了便於說明，主曝光區域110A之 Y方向的寬度L1，係設爲副曝光區域24A、24B、…之寬度 d的10倍。第13(A)圖中，自投影系PL射出之縮小像43，係相對於主曝光區域110A沿軌跡119在X方向以節距2 · d相對移動成正弦波狀，於時點tl、t2、t3、"·ΐ20各個縮小像43 中心的Υ座標與副曝光远域54Α、54Β、.54C、…54U中心之Y座標一致。此時’若僅於時點tl、t2、…照射電子束使對應之特性圖案的縮小像43曝光的話，於X方向相對副曝光區域54A、54B、…縮小像43之位置將會產生偏差。因此，作爲第2階段，本例中係藉由與投影系PL之朝向 Y方向之振動同步的，以電子MOL方式_影系PL之電子光學系之電磁場變化，來使投影系PL之4軸(對應第11 圖之光軸AX3)週P性的朝向X方向(直交於振動方向之方向)位移，如第13(B)圖所示般，使縮小像43之複製位置位移.。第13(B)圖中，於時點tl、t5、tlO、til之投影系PL 之鏡筒31的位置，對應顯示於第13(A)圖。此時，於時點 tl ’使縮小像43向-X方向位移，於時點t5則幾乎不須使縮小像43位移，而於時點tlO則有須要使縮小像43向+ X 方向位移。又，於時點tlO後之時點til，爲了曝光於鄰接 46 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -----„----訂·-------- 經濟部智慧財產局員工消費合作社印製 460933 A7 B7 五、發明說明（咕）於X方向之副曝光區域54L，需使縮小像43向一X方向位 / 移。將此匯整後，如第13(C)圖所示，使用將投影系PL之鏡筒31以振幅4L振動之機械MOL方式，以振幅Ll(=(l + 冷）· L4)使縮小像43振動之動作同步’藉電子MOL方式以約振幅d週期性的使縮小像43向X方向位移即可。機械 MOL方式下之投影系PL向Y方向之振動的頻率，與電子MOL方式下之投影系PL向X方向之振動的頻率Fm〇l· 雖然相等，但以電子MOL方式之縮小像43之動作，於第 13(C)圖中，當投影系PL位於端部時，縮小像43須有分別瞬間的自位置43B、或於位置43A向X方向移動寬度d之動作。換句話說，使用電子MOL方式，縮小像43以頻率2 • 對時間成鋸齒波狀向X方向(直交於投影系PL之機械振動方向之方向)以大致振幅d振動。將投影系PL之機械 MOL方式之振動與電子MOL方式之振動重疊後，縮小像 43即成爲在像面(晶圓W)上沿大致「8字形」之軌跡移動〇如上述般，在同步進行使用機械MOL方式之投影系 PL向Y方向之振動，與對晶圓W上主曝光區域110A之J 方向的掃瞄，以及使用電子MOL方式之縮小像43向X方向之位移時，對主曝光區域110A之縮小像43之中心相對軌跡，成爲如第13圖(D)之實線軌跡121般之矩形波狀。第13圖(D)中，自投影系PL射出之縮小像43，係相對於主曝光區域U0A沿軌跡121在X方向以節距2 · d相 47 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝.----；---J.訂---------. 經濟部智慧財產局員工消費合作社印製 A7 4 60933 ___B7 ___ 五、發明說明OfL) 對移動成矩形波狀，於時點tl、t2、t3、·420各個縮小像 43之中心與副曝光區域54Α、54Β、54C、…54U之中心一致。此時，於時點tl、t2、…照射電子束，即能分別使對應之特性圖案的縮小像曝光於副曝光區域54A〜54U。又’ 在晶圓W上之電子束光阻之感度較低，對時點tl、t2、… 之間隔的最小値T所須之曝光時間Δΐ2接近時，如參照第 11圖之說明般，以時點tl、t2、…爲中心之曝光時間之間，分別以電子MOL方式亦於Y方向修正縮小像43之複製位置即可。又，以機械MOL方^式使投影系PL對時間成三角波狀向Y方向振動，以使晶圓W向X方向掃瞄時，在不進行電子MOL方式之驅動的狀態下，對主曝光區域110A之縮小像43之中心相對軌跡，成爲如第14圖之實線軌跡122 般之三角波狀。此時，由於使用電子MOL方式之縮小像 43對X方向之修正量對時間以一次函數加以表示，因此電子MOL方式之驅動控制較爲容易。回到第12圖，以參照第13圖所說明之方法持續曝光，於第12(A)圖中，在光罩Μ之特性圖案群13A之特性圖案VI之複製後，進行相鄰之特性圖案群13C之特性圖案 A3之複製時，使第1圖之光罩平台20向X方向步進移動，據以將特性圖案群13C之中心移動至照明系之光軸ΑΧ1 附近。然後，透過第1圖之偏向器7將電子束ΕΒ照射於該特性圖案A3上。同樣的，在特性圖案之複製後，進行特性圖案W1之複製時，以及特性圖案U2之複製後，進行 48 · 紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)Vw = 2 · (1 / Tm〇l… (4) Then, after the exposure to the main exposure area 110A is completed, the wafer W is moved stepwise in the direction of the interval L1, and the mechanical MOL method is used to cast--. " '..u. .. ·· .... ··· ··--»·---· i. · ...:, vd The vibration of the PL in the Y direction synchronizes the crystal The circle w is scanned in an x direction, and corresponding reduced images of the corresponding characteristic patterns are sequentially exposed in the adjacent main exposure area 110B. Hereinafter, the wafer W is also sequentially reversed in the adjacent main exposure areas 110C,... Simultaneous exposure in the direction of the sweeping cat can copy the image of the circuit pattern as the target in the entire imaging area 52. At this time, 'the width D of the characteristic pattern 15A to 15Υ is about 500 // m, and the projection system PL If the projection magnification is not 1/10, the width d of the sub-exposure region 54 on the wafer W is about 50 // m. Furthermore, if the Y-direction width L1 of the main exposure region 110A is set to be one of the sub-exposure region 54 If the width d is 20 times, the width L1 is about 2mm (± lmm). Therefore, if the ⑴ formula is adopted, the minimum amplitude 値 when the projection system PL is vibrated in the Y direction by the mechanical MOL method is about Ll / (1+ / 5), that is, about 1.82mm. At this time, the width of the effective field of view of the object plane side of the projection system PL is approximately (D + L1 / (1+ / 3)) or more. That is, the The effective field of view is only a circular area with a diameter of about 2.3 mm or more. In fact, in order to make room for it, the amplitude of the projection system PL is about 1.2 times to 1.6 times the minimum value, and only the wafer within it It is also possible to copy the reduced image of the characteristic pattern within the range of the surface width L1. In addition, when the projection system PL is vibrated in the Y direction by the mechanical MOL method, the paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 male) Li) (Please read the precautions on the back before writing this page) Install ------------ Order · -------- Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 460933 A7 B7 V. Description of the invention (M) The frequency fMOL is, for example, about 40 to 60 Hz. The vibration mode at this time makes the projection system PL a sinusoidal vibration with time, which is more stable. However, as described later From the viewpoint of making it easy to control the copy position in the X direction by the electronic MOL method, the projection system PL is made larger in time. Triangular wave-shaped vibration is also possible. Specifically, if the frequency fM (u is 50 Hz (period Tm0l is 20 msec)) and the width d of the sub-exposure region is 50 / zm, the wafer W pairs. + X-direction scan cat The speed Vw is 5mm / sec according to the following formula. Secondly, for the operation of copying a predetermined pattern on an imaging area on a wafer using a characteristic pattern copying method using the reduction and copying device shown in FIG. 1 of this example—see, for example, 12th ~ Figure 13 illustrates this. FIG. 12 (A) shows an example of the layout of the mask M pattern of the exposure target. In FIG. 12 (A), the characteristic patterns 15A to 15Υ in the characteristic pattern group 13A on the mask M are formed. The patterns shown by the symbols A1 to Υ1 are also formed as the characteristic patterns 15A, ... in the other characteristic pattern groups 13B, 13C, 13D, and the patterns shown by the symbols A2, ..., A3, ..., and A4, ..., respectively. At this time, the irradiation area 14 of the electron beam is relatively moved along the trajectory 118 on the mask M, so that the reduced images of the patterns B1, C1, ... in the characteristic pattern group 13A are sequentially copied on the crystal of FIG. 12 (B). The width L1 in the imaging region 52 on the circle W, and the sub-exposure regions 54A, 54B, 54C, ... in the main exposure region 110A having a length L5. Therefore, as described with reference to FIG. 7, in the first stage, the projection system PL is caused to vibrate in the vibration direction MV (Y direction) by the mechanical MOL method, and the wafer W is scanned in the same direction as the vibration of the reduced image 43 in synchronization. + Scan direction MSA in X direction. 45 This paper size applies to the ten national standards (CNS) A4 specifications (210 X 297 mm) (Please read the precautions on the back before filling this page) Binding. I --- Bureau of Intellectual Property, Ministry of Economics Printed by the employee consumer cooperative 460933 A7 B7 V. Description of the invention (sergeant) If the vibration system of the projection system PL is sine wave-shaped at this time, the center of the reduced image 43 of the main exposure area 110A on the wafer W The relative trajectory of is a sine wave shape like the solid line trajectory 119 in FIG. 13 (A). In Figs. 12 to 14, for convenience of explanation, the width L1 in the Y direction of the main exposure area 110A is set to be 10 times the width d of the sub exposure areas 24A, 24B, .... In FIG. 13 (A), the reduced image 43 emitted from the projection system PL is relatively moved in a sine wave shape at a pitch of 2 · d along the trajectory 119 in the X direction with respect to the main exposure area 110A. At time t1, t2, t3, " · 20 The y-coordinates of the center of each reduced image 43 are consistent with the Y-coordinates of the sub-exposure far-field 54A, 54B, .54C, ... 54U center. At this time, if the electron beam is irradiated only at the time points t1, t2, ... to expose the reduced image 43 of the corresponding characteristic pattern, the position of the reduced image 43 relative to the sub-exposed areas 54A, 54B, ... in the X direction will be biased. Therefore, as the second stage, in this example, the 4 axis of the projection system PL is changed by the electromagnetic field of the electronic MOL method_electronic system of the film PL in synchronization with the vibration in the Y direction of the projection system PL. (Corresponds to the optical axis AX3 in FIG. 11). The peripheral P is shifted in the X direction (a direction orthogonal to the vibration direction), and the copy position of the reduced image 43 is shifted as shown in FIG. 13 (B). In FIG. 13 (B), the positions of the lens barrels 31 of the projection system PL at time points t1, t5, t10, and til are correspondingly displayed in FIG. 13 (A). At this time, at time point t1 ', the reduced image 43 is shifted in the -X direction, at time point t5, it is almost unnecessary to shift the reduced image 43, and at time point t10, it is necessary to shift the reduced image 43 in the + X direction. In addition, at the point til after the point t10, in order to be exposed to the adjacent 46 paper sizes, the Chinese National Standard (CNS) A4 specification (210 X 297 mm) is applied (please read the precautions on the back before filling this page) --- -„---- Order · -------- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 460933 A7 B7 V. Description of the invention (gu) The sub-exposure area 54L in the X direction needs to be reduced 43 is shifted / shifted in the X direction. As shown in FIG. 13 (C), the mechanical MOL method in which the lens barrel 31 of the projection system is vibrated with an amplitude of 4L is used to generate the amplitude Ll (= (l + Cold) · L4) Synchronize the vibration of the reduced image 43 'The electronic MOL method can be used to periodically shift the reduced image 43 in the X direction with an amplitude of d. The projection system in the mechanical MOL method is PL vibration in the Y direction The frequency is equal to the frequency Fm0l · of the vibration of the projection system PL in the X direction in the electronic MOL mode, but the operation of reducing the image 43 in the electronic MOL mode is shown in Figure 13 (C). When the PL is located at the end, the reduced image 43 must be moved from the position 43B at an instant or from the position 43A to the width d in the X direction. In other words, using the electronic MOL method, the reduced image 43 is vibrated at a frequency of 2 in a zigzag manner with respect to time (a direction orthogonal to the mechanical vibration direction of the projection system PL) with a vibration amplitude of approximately d. The mechanical MOL of the projection system PL After the vibration of the method overlaps with the vibration of the electronic MOL method, the reduced image 43 becomes a trajectory of an approximately "eight figure" on the image plane (wafer W). As described above, the projection system using the mechanical MOL method is simultaneously performed. The vibration of PL in the Y direction, the scanning in the J direction of the main exposure area 110A on the wafer W, and the displacement of the reduced image 43 in the X direction using the electronic MOL method, the reduced image 43 of the main exposure area 110A The center relative trajectory has a rectangular wave shape like the solid line trajectory 121 in FIG. 13 (D). In Figure 13 (D), the reduced image 43 projected from the projection system PL is relative to the main exposure area U0A along the track 121 in the X direction at a pitch of 2 · d phase 47. This paper scale applies the Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) (Please read the precautions on the back before filling out this page) Packing .----; --- J. Order ---------. Staff of Intellectual Property Bureau, Ministry of Economic Affairs Printed by a consumer cooperative A7 4 60933 ___B7 ___ 5. Description of the invention OfL) The pair is moved in a rectangular wave shape, at the time t1, t2, t3, · 420, the center of each reduced image 43 and the sub-exposure areas 54A, 54B, 54C, ... 54U The center is the same. At this time, by irradiating the electron beams at time points t1, t2, ..., the reduced images of the corresponding characteristic patterns can be exposed to the sub-exposure regions 54A to 54U, respectively. Also, the sensitivity of the electron beam photoresistor on the wafer W is low, and the exposure time Δ 値 2 required for the minimum 値 T at the time points t1, t2, ... is close, as described with reference to FIG. Between t1, t2,... as the center of the exposure time, the copy position of the reduced image 43 may be corrected in the Y direction by the electronic MOL method, respectively. In addition, the projection system PL is caused to vibrate in a triangular wave shape toward the Y direction in a mechanical MOL mode, so that when the wafer W is scanned in the X direction, the main exposure area is not driven by the electronic MOL method. The relative trajectory of the center of the reduced image 43 of 110A becomes a triangular wave shape like the solid line trajectory 122 of FIG. 14. At this time, since the correction amount in the X direction using the reduced image 43 of the electronic MOL method is expressed as a linear function with respect to time, the drive control of the electronic MOL method is relatively easy. Return to FIG. 12 and continue the exposure by the method described with reference to FIG. 13. In FIG. 12 (A), after the characteristic pattern VI of the characteristic pattern group 13A of the mask M is copied, the adjacent characteristic pattern is performed. When copying the characteristic pattern A3 of the group 13C, the mask stage 20 of FIG. 1 is moved stepwise in the X direction, thereby moving the center of the characteristic pattern group 13C to the vicinity of the optical axis AX1 of the lighting system. Then, the characteristic pattern A3 is irradiated with the electron beam EB through the deflector 7 in Fig. 1. Similarly, after the characteristic pattern is copied, when the characteristic pattern W1 is copied, and after the characteristic pattern U2 is copied, 48. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (please first (Read the notes on the back and fill out this page)

· n n n n 訂-----I 線| 經濟部智慧財產局員工消費合作社印製經濟部智慧財產局員工消費合作社印製，460933 A7 B7 五、發明說明（ψ"]) 特性圖案Α4之複製時等，亦分別以光罩平台20進行光罩 Μ之步進移動。如上述般，由於本例係自光罩Μ上之多數個特性圖案選擇複製對象之特性圖案時，以光罩平台20之步進移動選擇特性圖案群13Α、13Β…後’使用視野選擇用之偏向器7 ，因此能自多數個特性圖案中快速、且有效率的選擇複製對象之特性圖案。以上述之方式，當對第12(B)圖之主曝光區域110Α之曝光結束後，接著將第1圖之晶圓平台46向Υ方向步進移動寬度L1後，與將投影’'系PL之向Υ方向之振動動作同步，使晶圓W向-X方向(亦即，相鄰之主曝光區域110Β之掃瞄方向MSB)掃瞄，進行對該主曝光區域110Β之曝光，接下來在對每一相鄰之主曝光區域之曝光時，交互的於相反之掃瞄方面MSA、MSB、MSA進行晶圓W之掃瞄’最後於攝像區域52之全面複製既定層之電路圖案之像。同樣的，於晶圓W上其他攝像區域亦複製同一、或其他電路圖案之像。接著，經晶圓W表面之光阻劑的顯像步驟，及蝕刻或離子植入等之圖案形成步驟，形成該層之電路圖案。此時，本例由於主曝光區域110A、110B、…之Y方向寬度L1，爲一個副曝光區域54A、54B、…之寬度的1〇〜 30倍左右，因此與例如於每一列副曝光區域54使晶圓W 機械的掃瞄以進行曝光之情形相較，曝光步驟之太幅提高10〜30倍左右。 ......a. ,.......«.··—.：.>---«·— 關於此點，亦可考慮例如不使用機械MOL方式使投影 49 本紙張尺度適用中國國家標準,(CNS)A4規格（210 X 297公釐） I------------裝·----„----訂---------' ' ,.. ...( (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 4 6 0 9 3 3 A7 _ B7 五、發明說明（设）系PL振動，而如第12(C)圖所示，以上述電子MOL方式使縮小像43向Y方向、以一個副曝光區域之寬度d程度振動以進行曝光之方式。此種情形下，在每一次使晶圓W向X 方向掃瞄時，雖可在2列左右之副曝光區域進行曝光，但與參照第12(B)圖所說明之本例的曝光方法相較，效率爲 1/5〜1/15左右。又，上述實施形態中，雖以機械MOL方式使投影系 PL振動，且在掃瞄晶圓W時，例如爲了將第13(A)之縮小像43之中心的軌跡119對齊於一連串副曝光區域54A、 54B、54C、…之中心，論使用電子MOL .方式使投影系PL 之光軸位移，但亦可以下述方式替代，亦即、例如於第1 圖中，在投影系PL與晶画W之間配置與偏向器7、25相同之照射位置修正用偏向器，以此照射位置修正用偏向器修正縮小像43之位置亦可。進一步的，亦可使甩例如振回用偏向器25，使射人投影系PL之電子束EB之位置自光軸 AX1位移，來取代另外設置之照射位置修正用偏向器。又，上述實碑形態中，雖係使投影系PL振動，但例如在晶圓W上複製測試圖案之情形時，使投影系PL逐漸向Y方向位移同時依序複製對應之圖案亦可。再者，上述實施形態中，雖係使投影系PL向單方向位移或振動，但亦可設置一將投影系PL支撐爲於光軸垂直之面內直交之二方向移位自如之支撐機構，以使投影系PL向X方向及 Y方向二次元位移或振動。以此方式使投影系PL向二次元位移或振動時，最好是能是設置一測量系統(例如雷射干擾 50 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 1· _^i n n n n ' n n n n n n 一°°< n n n n 1 J .,,.V (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 4 6 0 9 3 3 Δ7 Α7 Β7 五、發明說明) 儀），以檢測投影系PL之X方向、Y方向位置及繞三軸之旋轉角。又，爲了將作爲可動構件之投影系PL支撐爲位移自如，亦可將投影系PL之四個位置以板彈簧加以支撐，以伸縮自如之驅動元件使該等板彈簧振動。或者，取代該驅動元件，以具有E字形之電磁石部與I字形之核芯部的核芯方式之三軸、或四軸之傳動裝置加以驅動亦可。又，上述實施形態中，第1圖之晶圓平台46之位置，係以既定之參照鏡22RX、22RY爲基準加以測量，但將該晶圓平台46之位置，以ί固定於投影系PL之參照鏡爲基準加以測量，根據投影系PL.之位置的測量値與晶圓平台46 之位置的測量値之差，控制晶圓平台46之位置亦可。其次，參照第15圖，說明本發明之第2實施形態。上述第1實施形態，係在以特性圖案複製方式進行曝光時適用本發明者，然而本第2實施形態，則係在以分割複製方式進行曝光時適用本發明者。又，本實施形態中，亦同樣的使用與第1圖之第1實施形態相同之電子束縮小複製裝置來進行曝光。第15圖，係顯示使用第1圖之電子束縮小複製裝置、以分割複製方式進行曝光時之光罩Ml、以及晶圓W ’如第15(A)圖所示，光罩Ml之圖案面上於X方向、Y方向以既定之節距配置有主視野13A1、13B1、13C1、13D1、…’ 各主視野13A1、13B1、…內部於X方向、Y方向以既定之節距所形成的副視野15上，分別形成有將既定之一個電路 51 本紙張尺度適用中國國家標準（CNS〉A4規格（210 X 297公釐） m n n· n ^^1 >^1 n n I n —l·· n n n I n f In n n I (請先閱讀背面之注意事項再氧、寫本頁) 460933 ____ B7____ 五、發明說明（穸）圖案加以擴大之圖案(以符號A、B、C、D表示)分割成5 行X5列(此時之分割數，實際上係例如5行X5列〜20行 X20列程度。）所得之原版圖案。又，如第15(B)圖所示，晶圓W上之一個或複數個晶粒份之電路圖案之像所曝光之區域的攝像區域52A，係於Y方向被分割爲複數之主曝光區域125A〜125F，各主曝光區域125A〜125F在本例中分別於X方向分割爲被曝光單元124A、124B···，該等被曝光單元124A、124B…係分別由5行X5列之副曝光區域54A1 所構成。於該副曝光區域54A1分別複製光罩Ml上之對應的副視野15之原版圖案’的縮小像43。本例中，係將該光罩Ml裝載於第1圖之光罩平台20 .上，將晶圓W裝載於第1圖之晶圓平台46上。然後，驅動光罩平台2及視野選擇用偏向器7，於第15(A)圖中’將電子束EB之照射區域14依序、規則性的移動於主視野 13A1中之第1個副視野、第2個副視野.....第25個副視野，分別以既定之曝光時間照樹電子束EB。因應此動作\於第1圖中，以機械MOL方式使投影系 PL朝Y方向(機械振動方向MV)振動，於+ X方向(機械性的掃瞄方向MSA)掃瞄晶圓W，且以電子MOL方式進行縮小像之照射位置的修正，如第15(B)圖所示的，據以在晶圓 W上之主曝光區域125A內5行X5列之副曝光區域54A1 所構成的第1被曝光單元124A，複製以符號A表示之電路圖案的縮小像。之後，於第15(A)圖中，將電子束EB之照射區域14 52 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4 6 0 9 3 3 A7 B7 五、發明說明（Ji) 規則性的移動於光罩M1上相鄰之主視野13B1中之第1個副視野、第2個副視野、…，實施以機械MOL方式使投影系PL朝Y方向振動之動作，與在掃瞄方向MSA掃瞄晶圓 W之動作，如第15(B)圖所示般’於主曝光區域125A內之第2、第3、…之被曝光單元124B、124C、…分別複製以符號B、C '…表示之電路圖案的縮小像。然後’在結束對主曝光區域125A之曝光後，藉由依序對相鄰之主曝光區域 125B、125C、…以交互相反之掃瞄方向MSB、MSA、…掃瞄晶圓W，以分割複製方式進行曝光。如上述般之本例，由於以分割複製方式進行複製時，係以機械MOL方式使縮小像43(投影系PL)朝Y方向振動，而能使各主曝光區域125A、125B、…之Y方向的寬度更寬，因此能提升曝光步驟之效率。又，第15圖之例，光罩 Ml上之主視野13A1、13B1、…內擴大圖案之分割數，與對應之晶圓W上之被曝光單元124A、124B、…內副曝光區域之分割數雖然相同(5行X5列），但亦可使主視野13A1 、Γ3Β1、…內擴方圖案之分割數，與被曝光單元124A、 124B、…內副曝光區域之分割數不同。進一步的，分割複製方式中，於晶圓W上相鄰之副曝光區域54A1之交界部設置重疊部(連接部），於該重疊部重疊相鄰之原版圖案的縮小像以進行曝光亦可。以此方式，能減少連接誤差。又’於光罩Ml上將電子束之照射區域Η，例如自主視野13Α1切換至鄰接之主視野13Β1時，可以移動光罩平台20來取代使電子束偏向，或再加以移動光罩平台20。 53 本紙張尺度適用中國國家標準（CNS)A4琛格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝-----„----.訂------ 線：經濟部智慧財產局員工消費合作社印製 ^ B0933 A7 B7 經濟部智慧財產局員工消費合作社印製五、發明說明（p_) 本例中，特別是在將欲複製於晶圓上之各攝像區域之光罩圖案單純的分割爲矩陣狀，以在多數之副區域分別形成分割圖案時，係與晶圓平台46相同的移動光罩平台20 ° 其次，參照第16圖說明本發明之第3實施形態。上述第1實施形態中，係以機械MOL方式使投影系PL之全體位移或振動，但在此第3實施形態中，則係使投影系PL之一部份機械性的位移或振動。第16圖係顯示對應於第10圖之本例的自光罩Μ到晶圓W之構件的槪略圖，該第16(A)圖中，光罩Μ上之特性圖案之使用投影系PL的縮小像係投影於晶圓W上之副曝光區域54Α。本例之投影系PL亦由前群27及後群29所構成，爲了便於說明，設前群27之光軸爲光軸ΑΧ2時，光軸ΑΧ2與照明系之光軸ΑΧ1 —致。本例中僅將作爲可動構件之後群29，配置成能在相對其光軸ΑΧ2之垂直方向位移及振動。亦即，保持後群29之鏡筒126，例如係以第1圖之板彈簧32Α、32Β加以保持，而能以第1圖之驅動系34 使該板彈簧32Α、32Β於Υ方向位移、及振動之方式構成〇此時，如第16(B)圖所示，在將光罩Μ上之特性圖案 15C之縮小像複製於晶圓W上相鄰之副曝光區域54Β上時，將穿透特性圖案15C之電子束以偏向器25振回至光軸 ΑΧ1上，且使投影系PL之後群29與副鏡筒126 —起朝+ Υ方向(振動方向MVA)位移Ay。據此，相對於前群27之光軸AX2，由於後群29之光軸AX2B僅朝+ Y方向位移八 54 (請先閱讀背面之注意事項再填寫本頁) 袭 in n flu n> ,1, i n n -·-0 線· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4 60933 A7 B7 五、發明說明dy) y，因此縮小像之位置僅朝+ Y方向(振動方向MVA)位移A Y，本例如下式般Ay與ΔΥ相等。 ΔΥ=Δγ (5) 經濟部智慧財產局員工消費合作社印制农· Nnnn order ----- I line | Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the Employees ’Cooperatives of the Ministry of Economics, Intellectual Property Bureau, 460933 A7 B7 V. Description of the invention (ψ "]) When copying the characteristic pattern A4 And so on, stepwise movement of the photomask M is also performed by the photomask platform 20, respectively. As described above, since this example is to select the characteristic pattern to be copied from the plurality of characteristic patterns on the mask M, the characteristic pattern groups 13A, 13B, etc. are selected by the step movement of the mask platform 20 and used for selecting the field of view. The deflector 7 can quickly and efficiently select a characteristic pattern to be copied from a plurality of characteristic patterns. In the manner described above, after the exposure to the main exposure area 110A in FIG. 12 (B) is completed, the wafer stage 46 in FIG. 1 is then moved stepwise in the direction of the width L1, and the projection will be `` PL ''. The vibratory movement in the direction toward the Υ direction is synchronized, so that the wafer W is scanned in the -X direction (that is, the scanning direction MSB of the adjacent main exposure area 110B), and exposure is performed on the main exposure area 110B. During the exposure of each adjacent main exposure area, the MSA, MSB, and MSA scan the wafer W in the opposite scanning direction. Finally, the image of the circuit pattern of the predetermined layer is completely copied in the imaging area 52. Similarly, images of the same or other circuit patterns are also copied on other imaging regions on the wafer W. Next, a circuit pattern of the layer is formed through a photoresist developing step on the wafer W surface and a pattern forming step such as etching or ion implantation. At this time, since the Y-direction width L1 of the main exposure areas 110A, 110B,... Is about 10 to 30 times the width of one sub-exposure area 54A, 54B,... Compared with the case where the wafer W is mechanically scanned for exposure, the exposure step is increased by about 10 to 30 times. ...... a., ....... «. ·· —.:.> ---« · — Regarding this point, it is also possible to consider, for example, not using a mechanical MOL method to project 49 sheets of paper Standards apply Chinese national standards, (CNS) A4 specifications (210 X 297 mm) -'', ..... ((Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 6 0 9 3 3 A7 _ B7 V. Description of the Invention (Design) It is PL vibration, and as shown in Fig. 12 (C), the electronic MOL method is used to cause the reduced image 43 to vibrate in the Y direction with a width d of a sub-exposure area to perform exposure. In this case, in Each time the wafer W is scanned in the X direction, although exposure can be performed in the sub-exposure area of about two rows, compared with the exposure method of this example described with reference to FIG. 12 (B), the efficiency is 1 / In the above embodiment, although the projection system PL is vibrated by the mechanical MOL method, and the wafer W is scanned, for example, to track the center of the reduced image 43 of the 13th (A) 119 is aligned at the center of a series of sub-exposed areas 54A, 54B, 54C, ... On the use of the electronic MOL. Method to shift the optical axis of the projection system PL, but it can also be replaced by the following method, that is, for example, in FIG. 1, the deflectors 7, 25 are arranged between the projection system PL and the crystal picture W The same deflector for the correction of the irradiation position may be used to correct the position of the reduced image 43 by the deflector for the correction of the irradiation position. Further, for example, the deflector 25 for vibrating return may be thrown to make the electron beam of the projection system PL The position of EB is shifted from the optical axis AX1 to replace a separately provided deflector for correction of the irradiation position. In the above-mentioned actual tablet form, although the projection system PL is vibrated, for example, when a test pattern is copied on the wafer W It is also possible to gradually shift the projection system PL in the Y direction while sequentially copying the corresponding patterns. In addition, in the above embodiment, although the projection system PL is displaced or vibrated in a single direction, a projection system PL may also be provided. The support is a support mechanism that can be displaced freely in two directions orthogonal to each other in a plane perpendicular to the optical axis, so that the projection system PL is displaced or vibrated in the second direction in the X and Y directions. In this way, the projection system PL is displaced or vibrated in the second direction Is best Can be set up a measurement system (for example, laser interference 50 paper size applicable to Chinese National Standard (CNS) A4 specifications (210 X 297 mm) 1 · _ ^ innnn 'nnnnnn 1 °° < nnnn 1 J. ,,. V (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 4 6 0 9 3 3 Δ7 Α7 Β7 V. Description of the instrument) to detect the X direction of the projection system PL, Y direction position and rotation angle around three axes. In addition, in order to support the projection system PL as a movable member for free displacement, the four positions of the projection system PL may be supported by leaf springs, and the leaf springs may be vibrated by a retractable driving element. Alternatively, instead of the driving element, a three-axis or four-axis transmission device of a core type having an E-shaped electromagnet portion and an I-shaped core portion may be driven. In the above embodiment, the position of the wafer stage 46 in FIG. 1 is measured based on the predetermined reference mirrors 22RX and 22RY. However, the position of the wafer stage 46 is fixed to the projection system PL. The reference mirror is used as a reference for measurement, and the position of the wafer table 46 may be controlled based on the difference between the measurement of the position of the projection system PL. And the measurement of the position of the wafer table 46. Next, a second embodiment of the present invention will be described with reference to Fig. 15. The first embodiment described above is applicable to the inventor when performing exposure using a characteristic pattern copying method, but the second embodiment is applicable to the present inventor when performing exposure using a split copy method. In this embodiment, the same electron beam reduction duplication device as that in the first embodiment shown in Fig. 1 is used for exposure. FIG. 15 shows the pattern surface of the photomask M1 when the exposure is performed using the electron beam reduction and copying device of FIG. 1 and the divided copy method is performed, and the wafer W ′ is shown in FIG. 15 (A). The main fields of view 13A1, 13B1, 13C1, 13D1, ... are arranged at predetermined pitches in the X direction and the Y direction. Each of the main fields of view 13A1, 13B1, ... is formed in the X direction and the Y direction at predetermined pitches. On the field of view 15, a predetermined circuit 51 is formed respectively. The paper size is applicable to the Chinese national standard (CNS> A4 specification (210 X 297 mm) mnn · n ^^ 1 > ^ 1 nn I n —l · · nnn I nf In nn I (Please read the precautions on the back, and then write this page) 460933 ____ B7____ V. Description of the invention (穸) The pattern with the pattern expanded (represented by the symbols A, B, C, and D) is divided into 5 Row X5 column (The number of divisions at this time is actually, for example, about 5 rows X5 columns to 20 rows X20 columns.) The original pattern obtained. Also, as shown in FIG. 15 (B), one of the wafers W or The imaging region 52A of the area exposed by the image of the circuit pattern of the plurality of crystal grains is divided into a plurality of regions in the Y direction. The exposure areas 125A to 125F, and each of the main exposure areas 125A to 125F are respectively divided into the exposed units 124A, 124B in the X direction in the example, and these exposed units 124A, 124B ... are each composed of 5 rows and X5 columns. The sub-exposure area 54A1 is constituted. In the sub-exposure area 54A1, the reduced image 43 of the original pattern of the corresponding sub-field of view 15 on the reticle M1 is copied. In this example, the reticle M1 is mounted in FIG. On the reticle stage 20, the wafer W is loaded on the wafer stage 46 shown in Fig. 1. Then, the reticle stage 2 and the deflector 7 for field-of-view selection are driven, and the electron beams are 'shown in Fig. 15 (A). The irradiated area 14 of the EB sequentially and regularly moves between the first sub-view and the second sub-view in the main field of view 13A1 .. The 25th sub-field of view irradiates the electron beam of the tree with a predetermined exposure time. EB. In response to this action, in the first figure, the projection system PL is vibrated in the Y direction (mechanical vibration direction MV) by the mechanical MOL method, and the wafer W is scanned in the + X direction (the mechanical scanning direction MSA). And the correction of the irradiation position of the reduced image is performed by the electronic MOL method, as shown in FIG. 15 (B), based on the wafer W The first exposed unit 124A composed of the sub-exposure area 54A1 of 5 rows and 5 columns in the main exposure area 125A copies the reduced image of the circuit pattern indicated by the symbol A. Then, in FIG. 15 (A), the electron beam is Irradiation area of EB 14 52 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 4 6 0 9 3 3 A7 B7 V. Description of the invention (Ji) Regular movement on the photomask M1 In the neighboring main field of view 13B1, the first sub field of view, the second sub field of view, ..., perform the operation of vibrating the projection system PL in the Y direction by the mechanical MOL method, and the operation of scanning the wafer W by the MSA in the scanning direction. As shown in FIG. 15 (B), the second, third, ... of the exposed units 124B, 124C, ... in the main exposure area 125A copy the reduction of the circuit pattern indicated by the symbols B, C ', ... respectively. image. Then, after the exposure to the main exposure area 125A is finished, the adjacent main exposure areas 125B, 125C, ... are scanned in the opposite scanning direction MSB, MSA, ... in the opposite direction, and the wafer W is scanned in a divided copy manner. Make an exposure. In this example as described above, when copying in the division copy method, the reduced image 43 (projection system PL) is vibrated in the Y direction by the mechanical MOL method, so that the main exposure areas 125A, 125B, ... can be made in the Y direction. The width is wider, which can improve the efficiency of the exposure step. In the example of FIG. 15, the number of divisions of the enlarged pattern in the main field of view 13A1, 13B1, ... on the mask M1, and the number of divisions of the sub-exposure regions in the exposed units 124A, 124B, ... on the corresponding wafer W. Although the same (5 rows by 5 columns), the number of divisions of the main field of view 13A1, Γ3B1, ... and the expanded square pattern may be different from the number of divisions of the sub-exposed areas in the exposed units 124A, 124B, .... Further, in the division copying method, an overlapping portion (connecting portion) is provided at the boundary portion of the adjacent sub-exposure region 54A1 on the wafer W, and a reduced image of the adjacent original pattern may be superposed on the overlapping portion for exposure. In this way, connection errors can be reduced. In addition, when the irradiation area of the electron beam on the mask M1 is changed, for example, when the autonomous field of view 13A1 is switched to the adjacent main field of view 13B1, the mask platform 20 may be moved instead of biasing the electron beam, or the mask platform 20 may be moved. 53 This paper size applies to China National Standard (CNS) A4 Schenger (210 X 297 mm) (Please read the precautions on the back before filling this page) --- Line: Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ B0933 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Description of the Invention (p_) In this example, it is especially to be copied on a wafer The mask pattern of each imaging region is simply divided into a matrix, so that when the division patterns are formed in most of the sub-regions, the mask stage is moved 20 °, which is the same as the wafer stage 46. Next, the present invention will be described with reference to FIG. 16 The third embodiment. In the first embodiment described above, the entire projection system PL is displaced or vibrated by a mechanical MOL method. However, in this third embodiment, a part of the projection system PL is mechanical. Displacement or vibration. Fig. 16 is a schematic diagram showing a member from the photomask M to the wafer W in this example corresponding to Fig. 10. In Fig. 16 (A), the characteristic pattern on the photomask M is used. The reduced image of the projection system PL is a sub-exposure region 54A projected on the wafer W. This example The projection system PL is also composed of the front group 27 and the rear group 29. For the sake of explanation, when the optical axis of the front group 27 is the optical axis AX2, the optical axis AX2 is the same as the optical axis AAX1 of the lighting system. In this example, only the The rear group 29 as a movable member is arranged to be able to be displaced and vibrated in a vertical direction with respect to its optical axis AX2. That is, the lens barrel 126 holding the rear group 29 is held by, for example, the plate springs 32A and 32B of FIG. The leaf springs 32A and 32B can be displaced and vibrated in the Υ direction by the drive system 34 shown in FIG. 1. At this time, as shown in FIG. 16 (B), the characteristic pattern on the photomask M When the reduced image of 15C is copied on the adjacent sub-exposure region 54B on the wafer W, the electron beam penetrating the characteristic pattern 15C is vibrated back onto the optical axis AX1 by the deflector 25, and the projection system PL group 29 and Sub lens barrel 126 —Displaces Ay in the + Υ direction (vibration direction MVA). According to this, relative to the optical axis AX2 of the front group 27, the optical axis AX2B of the rear group 29 is only shifted in the + Y direction by 8 54 (please first (Please read the notes on the back and fill in this page again.) Flu in n flu n >, 1, inn-· -0 line · This paper size applies to China Home Standard (CNS) A4 specification (210 X 297 mm) 4 60933 A7 B7 V. Description of the invention dy) y, so the position of the reduced image is only shifted AY in the + Y direction (vibration direction MVA), this example is Ay It is equal to Δ 。. ΔΥ = Δγ (5) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

因此，藉由使該位移量ΔΥ與副曝光區域54Α、54Β $ 間隔(d)—致，即能將特性圖案15C之縮小像複製於副曝光區域54B。又，亦可將前群27作爲可動構件以取代將後群29作爲可動構件。不過，投影系PL爲縮小系時，使用投影倍率/5(/3<1)的話，相對於前群27之位移量AyF的縮小像之位移量AYF即如下。 β · AyF …⑹ 爲了僅使縮小像位移AYF，由於須使前群27位移A YF/々，亦即使之位移的較AYF爲大，因此位移量變大使機械驅動系之構成複雜化。再者，如投影系PL般之縮小系中與前群27枏較，使後群29小型化及輕量化之可能性較高’因此使後群29位移將具有使機械驅動系之設計及製造較爲谷易之優點。其次，參照第17、18圖說明本發明之第4實施形態。上述第1實施形態中，係以機械MOL方式使投影系PL之全體位移或振動，但在此第4實施形態中，爲了防止位移或振動時之重心的移動，設施置有平衡用之構件。第Π圖係顯示對應於第7圖之本例的投影系PL之機械驅動系，該第17圖中，投影系PL係收納在鏡筒31內，鏡筒31係以二對板彈簧32A、32B及32C、32D包挾於Y 55 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）閱讀背Therefore, by making the displacement (ΔΥ) equal to the interval (d) between the sub-exposure regions 54A and 54B $, the reduced image of the characteristic pattern 15C can be copied to the sub-exposure region 54B. The front group 27 may be used as a movable member instead of the rear group 29 as a movable member. However, when the projection system PL is a reduction system, when a projection magnification of / 5 (/ 3 < 1) is used, the displacement amount AYF of the reduced image with respect to the displacement amount AyF of the front group 27 is as follows. β · AyF… ⑹ In order to shift only the reduced image by AYF, the front group 27 must be shifted by A YF / 々. Even if the displacement is larger than AYF, the amount of displacement becomes complicated. Furthermore, compared with the front group 27, the reduction system like the projection system PL has a higher possibility of miniaturizing and lightening the rear group 29. Therefore, the displacement of the rear group 29 will have the design and manufacture of a mechanical drive system. More advantages of Gu Yi. Next, a fourth embodiment of the present invention will be described with reference to Figs. 17 and 18. In the first embodiment described above, the entire projection system PL is displaced or vibrated by a mechanical MOL method. In this fourth embodiment, in order to prevent movement of the center of gravity during displacement or vibration, the facility is provided with a member for balancing. Figure Π shows the mechanical drive system of the projection system PL corresponding to this example in Figure 7. In this figure 17, the projection system PL is housed in a lens barrel 31, which uses two pairs of leaf springs 32A, 32B, 32C, 32D are included in Y 55. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm).

II 暑裝訂線 460933 A7 __B7 五、發明說明（pf) 方向之方式加以保持，板彈簧32A〜32DX方向的兩端部係固定於支撐構件57A1、57B1。又，以非接觸狀態包圍鏡筒 31之中央部之方式配置有環狀之平衡構件128,該平衡構件128亦以一對板彈簧32E、32F包挾於Y方向之方式加以保持’板彈簧32E、32F之X方向的兩端部亦固定於支撐構件57A1、57B1。因此，投影系PL及平衡構件128，係透過板彈簧32A〜32F支撐爲能於Y方向相對位移及相對振動。此時，投影系PL、鏡筒31、以及板彈簧32A〜32D 之合計構件之重量，與平衡構件(平衡碼)128及板彈簧32E 、32F之合計構件之重量係設定成大致相等。又，藉由固定於鏡筒31(板彈簧32A)之—Y方向側面的移動鏡40，與雷射干擾儀41，以既定之抽樣頻率測量鏡筒31之對Y方向的位移量、繞Z軸之旋轉角、以及繞X 軸之旋轉角，藉由固定於平衡構件128(板彈簧32E)之-Y 方向側面的移動鏡40G，與雷射干擾儀410，以既定之抽樣頻率測量平衡構件128之對Y方向的位移量、繞Z軸之旋轉角、以及繞X軸之旋轉角。本例中，根據該等測量値，在使投影系PL沿Y方向(機械振動方向MV)振動時’以相同之振幅且反相位使平衡構件128沿Y方向振動。換句話說，在使投影系PL朝+ Y方向僅位移AYG1時’使平衡構件128沿反方向之-Y方向僅位移^YGl。此係指將可動構件(本例中爲投影系PL本身)與平衡構件(平衡碼)128 — 起在實質上滿足動量守恆定律之狀態下，加以振動及位移。據此，由於包含投影系PL及平衡構件128機械系的重心 56 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注音？事項再填寫本頁) 裝-----I--訂---------線1 經濟部智慧財產局員工消費合作社印製 460933 A7 B7 經濟部智慧財產局員Η消費合作杜印制衣五、發明說明（灯）不致變化，因此能安定的使投影系PL振動及位移，提升對晶圓上之複製位置的精密度等。第18圖係顯示第17圖之機械系之驅動構件之一例，第18(A)圖中，於保持鏡筒31之板彈簧32A之一 Y方向的面上分別固定有伸縮自如之驅動元件111A、111B，於板彈簧32A之+ Y方向的面上亦分別固定有伸縮自如之驅動元件111C、111D。板彈簧32B及第17圖之板彈簧32C、32D 上亦同樣的固定有驅動元件。保持平衡構件128之板彈簧 32E之一Y方向的面上亦固定有伸縮自如之驅動元件129A 、129B，於板彈簧32E fe + Y方向的面上亦分別固定有伸縮自如之驅動元件129C、1,29D。板彈簧32F上亦同樣的固定有驅動元件。本例中，亦同樣的如第18(B)圖所示，控制該等驅動原件之伸縮量，藉由使板彈簧32A、32B沿Y方向之振動方向MV彎曲，且使板彈簧32E、32F朝相反之振動方向彎曲相同的量，包含投影系PL及平衡構件128機械系的重心G之位置即不致變化。又，第17圖之實施形態中，亦可使用音聲線圏馬達、 EI核芯方式之傳動裝置、或線性馬達等作爲機械驅動系。又，上述各實施形態中，例如第12(B)圖、第15(B)圖所示，在使晶圓W朝X方向移動之同時於Y方向之既定寬度(例如寬度L1)之區域複製光罩之各副區域之縮小像後，爲了於Y方向之鄰接當該區域之晶圓W上的區域複製各副區域之縮小像，使晶圓W朝Y方向步進時，最好是能使晶圓平台46之X方向、γ方向的速度成份不致同時爲0， 57 4 (請先閱讀背面之注意事項再^(寫本頁) 言 Γ % 本紙張尺度適用中國國家標準（CNS)A4規格（21CU 297公釐） 460933 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（y“ 亦即、最好是能使晶圓W依序沿U字形及反u字形軌跡移動般，移動晶圓。藉以此方式驅動晶圓平台46 ’即能謀求效率之提升、以及振動之減低。又，尤其是上述第2實施形態中，爲了在光罩Ml之主視野間移動電子束之照射區域，在移動光罩平台20時，亦藉由實質上使光罩平台20不致停止，亦即、使光罩平台 20之X方向、γ方向的速度成份不致同時爲0 ’即能謀求效率之提升、以及振動之減低。再者，上述各實施形態中，爲了使投影系PL(鏡筒31) 之至少一部份的可動構#振動或移動，隨其移動等有該可動構件傾斜、或轉動之情形。因此，最好是能在晶圓W之掃瞄曝光中，使用包含例如第17圖所示之雷射干擾儀41 的測量系統，隨時分別測量投影系PL繞X軸之旋轉量與繞Y軸之旋轉量，根據該測量結果連續地修正來自投影系 PL之電子束與晶圓w之相對位置關係。據此，能進〜歩的提升光罩Μ上副視野之縮小像與晶圓W上副曝光區域之定位(校準)精度。又，亦在其掃瞄曝光中測量投影系PL 繞Ζ軸之旋轉量，根據該測量結果使光罩與晶圓中至少〜方旋轉亦可。又，上述各實施形態中，投影系PL雖爲一軸’但於第1圖中，將能以機械MOL方式驅動之投影系PL於Υ方向以可變間隔配置複數軸亦可。此時，作爲其一例，設置一調整機構，以將該複數軸之投影系PL之間隔調整至曝光對象之晶圓上攝像排列之節距的整數倍，輸入各投影系 58 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 2清先閱讀背面之注*事項再填寫本頁> '竣—------訂----- 線— 460933 A7 B7 經濟部智慧財產局員工消費合作社印製五、發明說明（幻） PL電子束之照射位置之偏差，以抵消該間隔與該節距之整數倍的差分(殘留誤差），使用相同之控制系、使用該等投影系PL同時進行曝光。據此，效率將更爲提升。此時，爲主測量複數軸之投影系PL曝光中心的間隔可使用大型基準標誌構件，更進一步的，亦可將一基準標誌對複數之投影系PL進行相對移動。又，亦可設置以機械MOL方式驅動投影系之至少一部份之可動構件的平台（以下’稱「MOL用平台」），於該 MOL用平台上以能驅動之方式設置複數個投影系之可動構件，以視晶圓上攝像排列之節距來調整該可動構件之間隔亦可。此機構，由於能使甩一個MOL用平台同時使複數個可動構件位移、或振動，因此能使驅動系之機構部簡單化〇其次，使用上述實施形態之低加速電壓之電子束的複製裝置(低加速電壓電子束複製裝置）中，爲了測量在晶圓平台46上之電子束形狀、及以機械MOL方式使電子束振動時之電子束的辑幅，亦可於晶圓平台46上以既定之間隔形成具備有藉電子束之照射而產生二次電子束之第1部’ 與不產生二次電子束之第2部的基準標誌。此情形下，檢測以機械MOL方式電子束位移時之二次電子束的輸出，例如將該輸出針對該電子束之位置以微分(數位信號以差分演算）所得之信號，而能進行該電子束之位置及形狀的校準 (calibration) 0 又，低加速電子束複製裝置，若在光罩平台、或晶圓 59 (請先閱讀背面之注意事項再填寫本頁) 裝-----—.訂---------線. 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）經濟部智慧財產局員工消費合作社印製 460933 A7 B7 五、發明說明d 平台之附近存在有磁場時，有可能因該磁場之影響使電子束彎曲，而使複製精密度劣化。因此，亦可例如在晶圓平台上設置用來檢測根據磁場強度之電子束之偏向誤差的基準板，以檢測電子束之偏向誤差，依據預先設定之細目 (table)控制以機械MOL方式使電子束振動時之速度、及晶圓平台之位置，以抵消該偏向誤差。其次，參照第19圖，說明使用上述實施形態之電子束縮小複製裝置作爲曝光裝置的半導體元件之製造步驟之一例。第19圖顯示半導體.元件之製造步驟之一例，該第19 圖中，於製造半導體元件時，首先例如對單結晶矽錠進行切片及硏磨等以製造晶圓。此時，於晶圓W之外周設置作爲晶圓校準之基準的缺口部(切口等）。於下一個步驟ST1 中，於晶圓W上例如蒸鍍金屬膜或絕緣膜等，以塗佈電子束光阻劑。在接著的步驟ST2中，使用第1圖之電子束縮小複製裝置，以特性圖案複製方式將自光罩Μ上複數個特性圖案群13中以既定之順序所選擇之多數個特性圖案之縮小像，依序連接複製於晶圓W上的一個攝像區域(一個或複數個晶粒份之電路圖案所複製之區域)52內。且在晶圓 W上其他的攝像區域52內亦同樣的依序複製多數之特性圖案之縮小像。此時，由於係使用機械MOL方式使投影系 PL振動，因此曝光步驟之效率變得極高。之後’於步驟 ST3中，藉進行顯像及蝕刻(或離子植入)等，於晶圓W上之各攝像區域52形成圖案F。 60 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---------------袭-----：.---訂--------!線 (請先閲讀背面之.注音？事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 ^80933 A7 _____B7___. 五、發明說明（4) 於對下一層之曝光時，亦首先於步驟ST4中，於晶圓 W上例如蒸鍍金屬膜或絕緣膜等以塗佈電子束光阻劑’於步驟ST5中，使用第1圖之電子束縮小複製裝置，以特性圖案複製方式將自光罩Μ上複數個特性圖案群13中以和步驟ST2不同之之順序所選擇之多數個特性圖案之縮小像，依序連接複製於晶圓W上的一個攝像區域52內。且在晶圓W上其他的攝像區域52內亦同樣的依序複製多數之特性圖案之縮小像。此時，亦由於係使用機械MOL方式使投影系PL振動，因此曝光步驟之效率變得極高。之後，於步驟ST6中，藉進行虐像及蝕刻等，於晶圓W上之各攝像區域52形成圖案G。. 上述之電子束光阻劑塗佈步驟〜圖案形成步驟（步驟 ST1〜ST3或步驟ST4〜ST6) ’係重複所需之次數以製造期望之半導體元件(步驟ST7)。然後，經過將晶圓W上各晶粒CP切開之切割步驟(步驟ST8)、打線步驟、以及封裝步驟等（步驟ST9) ’製造出成品之半導體元件SP。此時，由於本例使用電子卑複製裝置之曝光步驟的效率極高，因此整體能以高生產率生產高機能之元件。又，上述之實施形態中，雖在製造半導體元件之際使用機械MOL方式，但在製造其他元件，例如製造攝像元件 (CCD等）、液晶顯示元件、電漿顯示器等之顯示元件、薄膜磁頭、以及微機器等時亦能適用本發明。更進一步的，製造光學式之投影曝光裝置用光罩(標線板）、其他之X光曝光裝置(含EUV曝光裝置)或電子束複製裝置用之光罩等 61 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） <請先閱讀背面之注意事項再4寫本頁) 裝-----：----訂---------線， A7 460933 ___ B7 . " — 五、發明說明（bb) 時亦能適用本發明。亦即、於製造光罩時，例如作爲第〜階段，將擴大原版圖案之圖案以上述實施形態之曝光方法描繪於玻璃基板上，藉進行顯像及蝕刻等以製造主標線扳。然後，作爲第二階段，使用光學式投影曝光裝置將該主標線板之圖案複製於工作標線板用之玻璃基板上即可。又，在製造X光曝光裝置或電子束複製裝置用之光罩時，使用上述實施形態之曝光方法將既定之原版圖案複製於作爲光罩基板之晶圓上。作爲上述實施形態之曝光裝釐的電子束複製裝置，可藉將由複數個電子透鏡或偏向器所構成之照明系，以及作禽可動構件之投影系組裝入複製裝置本體後進行電子光學調整，將由多數個機械零件所構成之標線板平台、晶圓平台安裝於複製裝置本體後連接線路及管路，再進行綜合調整（電氣調整、動作確認等）加以製造。又，該複製裝置之製造最好是能在溫度及潔淨度受到管理之無塵室進行。又，上述實施形態中，雖係以特性圖案複製方式或分割複製方式進行嗶光，但本發明除此之外當然亦可適用於使用可變成形光束之電子束複製裝置或高斯光束式之電子束複製裝置等。關於此，上述實施形態中，雖係以低加速方式使用電子鎗1，但除此之外在以中加速(加速電壓15kV 〜30kV左右），或以高加速(加速電壓50kV〜100kV左右)使用電子鎗時，亦能適用本發明。再者，上述實施形態中，雖係使用電子束作爲帶電粒子線，但本發明亦能適用於使用離子束等作爲帶電粒子線 62 本紙張尺度適用中國國家谭準（CNS)A4規格（210 X 297公釐） 460933 B7 五、發明說明（Μ) 之帶電粒子線複製裝置。此外，本發明並不限定於上述實施形態，在不脫離本發明之要旨範圍內能採取各種構成。又，本案之內容係完全引用包含說明書、申請專利範圍、圖式以及發明槪要之 1999年7月9日日本專利申請第11-204195號所有的揭示內容。 [產業上之利用性] 根據本發明之第1曝光方法，由於能以機械M0L方式使投影系位移，因此具有不至使投影系大型化、能於曝光對象物體(被曝光體)上之’、廣大區域複製圖案的優點。又，根據本發明之第2.曝光方法，由於能以機械MOL 方式使投影系振動，因此具有提高對曝光對象物體進行曝光時之效率的優點。又，將本發明適用於將自光罩上依序選擇之小圖案之像複製於曝光對象之物體上時，由於能提高複製速度’因此能提案生產率。又，根據本發明之曝光裝置，可實施該種曝光方法。又’根據本發明之元件製造方法，能以高效率製造高機能之元件。 63 中國國家標準（CNS)A4規袼（210 X 297公釐） f請先閱讀背面之注音？事項再t寫本頁) 裝 l· I--訂---------線：經濟部智慧財產局員工消費合作社印製II Summer binding line 460933 A7 __B7 5. The invention is kept in the direction of (pf), and both ends in the direction of the plate springs 32A to 32DX are fixed to the support members 57A1 and 57B1. Further, a ring-shaped balance member 128 is disposed so as to surround the central portion of the lens barrel 31 in a non-contact state, and the balance member 128 is also held by a pair of leaf springs 32E and 32F wrapped in the Y direction. The leaf spring 32E Both ends of the 32F in the X direction are also fixed to the support members 57A1 and 57B1. Therefore, the projection system PL and the balance member 128 are supported by the plate springs 32A to 32F so as to be capable of relative displacement and relative vibration in the Y direction. At this time, the weights of the total members of the projection system PL, the lens barrel 31, and the plate springs 32A to 32D are set to be approximately equal to the weights of the total members of the balance member (balance code) 128 and the plate springs 32E and 32F. In addition, the moving mirror 40 fixed to the -Y side of the lens barrel 31 (plate spring 32A) and the laser jammer 41 measure the displacement amount of the lens barrel 31 in the Y direction and the Z direction at a predetermined sampling frequency. The rotation angle of the axis and the rotation angle about the X axis are measured by a moving mirror 40G fixed to the -Y side of the balancing member 128 (leaf spring 32E) and a laser jammer 410 at a predetermined sampling frequency to measure the balancing member. The amount of 128 displacement in the Y direction, the rotation angle about the Z axis, and the rotation angle about the X axis. In this example, when the projection system PL is vibrated in the Y direction (mechanical vibration direction MV) based on these measurements ’, the balance member 128 is vibrated in the Y direction with the same amplitude and opposite phase. In other words, when the projection system PL is shifted by only AYG1 in the + Y direction, the balance member 128 is shifted by only ^ YG1 in the -Y direction in the opposite direction. This means that the movable member (in this case, the projection system PL itself) and the balance member (balance code) 128 are vibrated and displaced in a state that substantially meets the law of conservation of momentum. According to this, since the center of gravity of the mechanical system of the projection system PL and the balance member 128 is 56, this paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the note on the back? Matters before filling out this page) ----- I--Order --------- Line 1 Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 460933 A7 B7 Member of the Intellectual Property Bureau of the Ministry of Economic Affairs Η Consumption Cooperation Du printed clothing (Lamp) does not change, so it can stably make the projection system PL vibrate and shift, and improve the accuracy of the copy position on the wafer. Fig. 18 shows an example of the driving mechanism of the mechanical system of Fig. 17. In Fig. 18 (A), a telescopic driving element 111A is fixed to each of the Y-direction surfaces of the plate spring 32A holding the lens barrel 31. , 111B, and retractable driving elements 111C and 111D are also fixed on the + Y direction surface of the leaf spring 32A, respectively. The leaf spring 32B and the leaf springs 32C and 32D of FIG. 17 are similarly fixed with a driving element. Retractable driving elements 129A and 129B are also fixed to one of the Y direction surfaces of the plate spring 32E of the holding member 128, and retractable driving elements 129C and 1 are also fixed to the surface of the leaf spring 32E fe + Y respectively. , 29D. The leaf spring 32F is similarly fixed with a driving element. In this example, as shown in FIG. 18 (B), the amount of expansion and contraction of the driving elements is controlled, and the leaf springs 32A and 32B are bent in the vibration direction MV of the Y direction, and the leaf springs 32E and 32F are bent. By bending the same amount in the opposite vibration direction, the position of the center of gravity G of the mechanical system including the projection system PL and the balance member 128 is not changed. In the embodiment shown in Fig. 17, a sound beam motor, a transmission device of the EI core system, or a linear motor may be used as the mechanical drive system. In each of the above-mentioned embodiments, for example, as shown in FIGS. 12 (B) and 15 (B), the wafer W is moved in the X direction and the area of a predetermined width (for example, the width L1) in the Y direction is copied. After the reduced images of the sub-regions of the photomask, in order to be adjacent to the Y direction, when the region on the wafer W in the region copies the reduced images of the sub-regions, and the wafer W is stepped in the Y direction, it is best to Make the speed components in the X direction and γ direction of the wafer platform 46 not to be 0, 57 4 at the same time (please read the precautions on the back before ^ (write this page)) Γ% This paper standard applies to China National Standard (CNS) A4 Specifications (21CU 297mm) 460933 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention Moving the wafer. By driving the wafer platform 46 'in this way, it is possible to improve the efficiency and reduce the vibration. In particular, in the second embodiment described above, in order to move the electron beam between the main field of view of the mask M1 When the irradiated area is moved, the mask stage 20 is The mask stage 20 does not stop, that is, the speed components in the X direction and the γ direction of the mask stage 20 are not simultaneously 0 ', which can improve the efficiency and reduce the vibration. In addition, in the above embodiments, in order to Vibration or movement of the movable structure # of at least a part of the projection system PL (the lens barrel 31) may cause the movable member to tilt or rotate as it moves. Therefore, it is preferable to scan the wafer W During exposure, a measurement system including, for example, the laser jammer 41 shown in FIG. 17 is used to measure the rotation amount of the projection system PL about the X axis and the rotation amount about the Y axis at any time, and continuously correct the projection from the projection based on the measurement results. It is the relative positional relationship between the electron beam of the PL and the wafer w. Based on this, the reduced image of the secondary field of view on the mask M and the positioning (calibration) accuracy of the secondary exposure area on the wafer W can be increased. In the scanning exposure, the amount of rotation of the projection system PL about the Z axis is measured, and at least one of the photomask and the wafer may be rotated according to the measurement result. In addition, although the projection system PL is one axis in each of the above embodiments, But in the first picture, the mechanical M The projection system PL driven by the OL method may be arranged with multiple axes at variable intervals in the Υ direction. At this time, as an example, an adjustment mechanism is provided to adjust the interval of the projection system PL of the multiple axes to the wafer to be exposed. An integer multiple of the pitch of the camera arrangement, input 58 for each projection system. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). 2 Please read the note on the back first before filling in this page > ' End —-------- Order ----- Line— 460933 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (magic) The deviation of the irradiation position of the PL electron beam to offset the interval and Differences (residual errors) of integer multiples of the pitch are simultaneously exposed using the same control system and the projection systems PL. Accordingly, efficiency will be further improved. At this time, a large reference mark member may be used as the interval between the exposure centers of the projection systems PL that are the main measuring axes. Further, a reference mark may be relatively moved to the projection system PL of the plurality. In addition, a platform that drives at least a part of the movable member of the projection system by a mechanical MOL method (hereinafter referred to as a "MOL platform") may be provided, and a plurality of projection systems may be driven on the MOL platform. The interval of the movable member may be adjusted according to the pitch of the camera arrangement on the wafer. This mechanism can displace or vibrate a plurality of movable members at the same time by throwing one MOL platform, thereby simplifying the mechanism of the drive system. Secondly, using the electron beam copying device with a low acceleration voltage in the embodiment described above ( In the low-acceleration voltage electron beam replication device), in order to measure the shape of the electron beam on the wafer platform 46 and the amplitude of the electron beam when the electron beam is vibrated by the mechanical MOL method, it can also be set on the wafer platform 46 in a predetermined manner. The interval is formed with a reference mark including a first portion ′ that generates a secondary electron beam by the irradiation of the electron beam and a second portion that does not generate a secondary electron beam. In this case, the output of the secondary electron beam when the electron beam is displaced by the mechanical MOL method is detected, for example, the output is obtained by differentiating (the digital signal is differentially calculated) the position of the electron beam, and the electron beam can be performed. Position and shape calibration (calibration) 0 In addition, the low-acceleration electron beam replication device, if on the photomask platform, or wafer 59 (Please read the precautions on the back before filling this page) Order --------- line. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 460933 A7 B7 V. Description of invention d Platform When a magnetic field is present in the vicinity, the electron beam may be bent due to the influence of the magnetic field, which may degrade the reproduction accuracy. Therefore, for example, a reference plate for detecting the deviation error of the electron beam according to the magnetic field intensity can be provided on the wafer platform to detect the deviation error of the electron beam, and the electrons can be mechanically MOLed according to a preset table control. The speed of the beam when it vibrates, and the position of the wafer platform to offset the deviation error. Next, referring to Fig. 19, an example of a manufacturing process of a semiconductor element using the electron beam reduction copying apparatus of the above embodiment as an exposure apparatus will be described. FIG. 19 shows an example of a manufacturing process of a semiconductor element. In this 19th figure, when manufacturing a semiconductor element, first, for example, slicing and honing a single crystal silicon ingot to manufacture a wafer. At this time, notches (notches, etc.) are provided on the outer periphery of the wafer W as a reference for wafer alignment. In the next step ST1, a metal film or an insulating film is deposited on the wafer W, for example, to coat the electron beam photoresist. In the next step ST2, the reduced image of the plurality of characteristic patterns selected from the plurality of characteristic pattern groups 13 on the photomask M in a predetermined order is reproduced in a characteristic pattern using the electron beam reduction and reproduction apparatus of FIG. , Sequentially connected to an imaging region (an area copied by a circuit pattern of one or more crystal grains) 52 copied on the wafer W. In addition, in the other imaging regions 52 on the wafer W, the reduced images of the plurality of characteristic patterns are similarly sequentially copied. At this time, since the projection system PL is vibrated using the mechanical MOL method, the efficiency of the exposure step becomes extremely high. Thereafter, in step ST3, a pattern F is formed on each imaging region 52 on the wafer W by performing development and etching (or ion implantation) and the like. 60 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) --------------------------------- Order --- -----! Line (please read the phonetic on the back? Matters before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ 80933 A7 _____B7___. 5. Description of the invention (4) Exposure to the next layer In step ST4, an electron beam photoresist is coated on the wafer W, for example, by vapor-depositing a metal film or an insulating film. In step ST5, the electron beam reduction and copying device shown in FIG. In the pattern copying method, the reduced images of the plurality of characteristic patterns selected from the plurality of characteristic pattern groups 13 on the photomask M in a different order from step ST2 are sequentially connected and copied in an imaging region 52 on the wafer W. . In addition, in the other imaging regions 52 on the wafer W, the reduced images of the plurality of characteristic patterns are similarly sequentially copied. At this time, since the projection system PL is vibrated using the mechanical MOL method, the efficiency of the exposure step becomes extremely high. Thereafter, in step ST6, a pattern G is formed on each imaging region 52 on the wafer W by performing image abuse and etching. The above-mentioned electron beam photoresist coating step to pattern forming step (steps ST1 to ST3 or steps ST4 to ST6) 'are repeated as many times as necessary to manufacture a desired semiconductor element (step ST7). Then, through a dicing step (step ST8), a wire bonding step, a packaging step, and the like (step ST9) of cutting each crystal CP on the wafer W, a finished semiconductor element SP is manufactured. At this time, since the efficiency of the exposure step using the electronic copying apparatus in this example is extremely high, it is possible to produce high-performance components as a whole with high productivity. In the above-mentioned embodiment, although the mechanical MOL method is used in the manufacture of semiconductor devices, other devices are manufactured, such as display devices such as imaging devices (CCD), liquid crystal display devices, plasma displays, thin film magnetic heads, The present invention can also be applied to microcomputers and the like. Furthermore, manufacture of photomasks (reticles) for optical projection exposure devices, other X-ray exposure devices (including EUV exposure devices) or photomasks for electron beam copying devices, etc. 61 This paper size applies to Chinese national standards (CNS) A4 specification (210 X 297 mm) < Please read the precautions on the back before writing this page) A7 460933 ___ B7. &Quot; — V. The invention can also be applied to the description of the invention (bb). That is, when manufacturing the photomask, for example, as the first stage, the pattern of the enlarged original pattern is drawn on the glass substrate by the exposure method of the above-mentioned embodiment, and development and etching are performed to manufacture the main mark. Then, as the second stage, the pattern of the main reticle can be copied on the glass substrate for the working reticle using an optical projection exposure device. When manufacturing a photomask for an X-ray exposure device or an electron beam copying device, a predetermined original pattern is copied on a wafer serving as a photomask substrate using the exposure method of the above embodiment. As the exposure device of the above embodiment, the electron beam copying device can be adjusted by combining the lighting system composed of a plurality of electronic lenses or deflectors and the projection system as a movable member of the bird into the copying device body. The reticle plate platform and wafer platform made up of a large number of mechanical parts are connected to the circuit and pipeline after being mounted on the replication device body, and then comprehensively adjusted (electrical adjustment, operation confirmation, etc.) for manufacturing. Further, it is preferable that the reproduction device can be manufactured in a clean room in which temperature and cleanliness are controlled. In addition, in the above-mentioned embodiment, although the beeping is performed by the characteristic pattern copying method or the division copying method, the present invention can of course be applied to an electron beam copying device using a variable shaped beam or a Gaussian beam type electron. Beam duplicating device, etc. In this regard, in the above embodiment, although the electron gun 1 is used in a low-acceleration manner, other than that, the electron gun 1 is accelerated at a medium speed (acceleration voltage of about 15kV to 30kV), or the electron gun is used at high acceleration (acceleration voltage of about 50kV to 100kV) In some cases, the present invention can be applied. Furthermore, in the above embodiment, although the electron beam is used as the charged particle beam, the present invention can also be applied to the use of an ion beam or the like as the charged particle beam. 62 The paper size is applicable to the Chinese National Standard of Tan (CNS) A4 (210 X 297 mm) 460933 B7 V. Charged particle beam replication device of the invention description (M). The present invention is not limited to the above-mentioned embodiments, and various configurations can be adopted without departing from the gist of the present invention. In addition, the content of this case is a complete citation including all disclosures of Japanese Patent Application No. 11-204195 on July 9, 1999, including the specification, the scope of patent application, drawings, and the summary of the invention. [Industrial Applicability] According to the first exposure method of the present invention, since the projection system can be shifted by the mechanical MOL method, it has the advantage of not being able to increase the size of the projection system on the exposure target object (exposed body). 2. The advantages of copying patterns in a large area. In addition, according to the second exposure method of the present invention, since the projection system can be vibrated by the mechanical MOL method, it has the advantage of improving the efficiency when the exposure target is exposed. In addition, when the present invention is applied to copying an image of a small pattern sequentially selected from a reticle onto an object to be exposed, since the copying speed can be increased, productivity can be proposed. Further, according to the exposure apparatus of the present invention, such an exposure method can be implemented. Further, according to the device manufacturing method of the present invention, a high-performance device can be manufactured with high efficiency. 63 Chinese National Standard (CNS) A4 Regulations (210 X 297 mm) f Please read the phonetic notation on the back? Matters will be written on this page) Packing l · I--Order --------- Line: Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

Claims

ABCD 460933 patent application scope 1 · An exposure method is to irradiate a first object with a charged particle line, and irradiate a charged object line passing through the pattern of the first object to a second object through a projection system, which is characterized in that: 2 Different plural positions on the object are irradiated respectively through the corresponding map on the first object _ the charged particle line, which is an exposure method that makes at least part of the movable member f || _ in the aforementioned projection system, in which the above and further, Relative to the aforementioned projection 2. If the patent application scope, the projection system is substantially perpendicular to the optical axis to move the aforementioned second object. 3 Please specialize: Exposure method of item 2 of the profit scope I, which is synchronized with the movement of the aforementioned body or the movement of the aforementioned movable member, and the electrical change of the electromagnetic field in the front system to correct the aforementioned charged particle line. The irradiation position on the first 2 objects. 4. If the exposure method of any one of items 1, 2 or 3 of the scope of patent application, wherein a plurality of different patterns are formed on the first object in advance, according to the irradiation position on the second object, it will pass through the first The charged particle line of the selected pattern on the object is guided to the aforementioned projection system. 5 · The exposure method according to any one of the claims 1, 2, or 3, wherein the rotation information of the movable member is detected, and the irradiation position of the charged particle beam on the second object is corrected based on the rotation information. . 6. The exposure method according to any one of claims 1, 2 or 3, wherein the movable member can be displaced in the first direction, and the second object system is moved in the second direction which is substantially orthogonal to the first direction. In the aforementioned first direction, the pattern of the aforementioned first object is copied to the garment paper & degree of the movable member in accordance with the Chinese National Standard (CNS) A4 specification (2iOx_2W mm) A 3 B8 C8 D8 4 60 933 6. Application The scope of the patent is that the moving distance is a large area on the aforementioned second object. 7 · An exposure method in which a first object is irradiated with a charged particle ray, and the charged particle ray passing through the pattern of the first object is irradiated to the second object through a projection system, which is characterized in that: in order to be different from the second object, The plurality of positions respectively irradiate the charged particle beams passing through the corresponding pattern on the first object, so that at least part of the movable members in the aforementioned projection system vibrate in a predetermined direction. 8 · The exposure method according to item 7 of the scope of the patent application, wherein vibrations with the movable member in the first direction (Y direction) are performed to move the second object in the second direction crossing the first direction, and The two-dimensional area on the second object irradiates the charged particle beam passing through the corresponding pattern on the first object. 9 · The exposure method according to item 7 or 8 of the scope of patent application, wherein the movable member is vibrated in a sine wave shape in time along the aforementioned first direction. 10 · The exposure method according to item 8 of the scope of the patent application, wherein the electromagnetic field in the projection system is electrically changed in synchronization with the vibration of the movable member to correct the irradiation position of the charged particle beam on the second object. 11 · The exposure method according to item 7 or 8 of the scope of patent application, wherein the vibration frequency of the movable member is controlled according to the sensitivity of the second object. 12 · The exposure method according to item 7 or 8 of the scope of patent application, wherein the intensity of the aforementioned charged particle beam is controlled according to the sensitivity of the aforementioned second object. 13. The exposure method according to item 7 or 8 of the scope of patent application, wherein the balancer is connected to the movable member through a flexible member, and when the movable member is vibrated, the balancer including the movable member and the balancer ( Please read the note first and then pay attention to Ning Xiang and then this page)-° 蛵 ^ '. That smart money 4 Aiac Industrial and consumer cooperation Du printed tabulation paper standards apply Chinese National Standards (CNS) A4 specifications (MOX2W public front ) 460933 Λ8 B8 C8 D8 VI. The scope of the center of gravity of the mechanical system of the patent application is not to be displaced in such a way that the balancer is vibrated in the opposite phase to the movable member. 14 · An exposure device for irradiating a first object with a charged particle beam, and irradiating a second object with the charged particle beam passing through the first object pattern through a projection system, characterized in that: in order to move the charged particle beam at the second object, An irradiation position on the object is provided with a mechanical drive system to displace at least a part of the movable member in the aforementioned projection system. 15 · The exposure device according to item 14 of the patent application, wherein a second object platform is provided to move the second object relative to the projection system in a plane that is substantially perpendicular to the optical axis of the projection system. 16 · The exposure device according to item 15 of the scope of patent application, wherein in order to correct the irradiation position of the aforementioned charged particle beam on the aforementioned second object, an electronic drive system for electrically changing the electromagnetic field in the aforementioned projection system is provided, and according to the aforementioned 2 A control system that controls the operation of the object drive platform and the mechanical drive system to control the electronic drive system. w · If you apply for the exposure device of the Qinli scope item 14, I5 or I6, wherein the first object is formed with a plurality of different patterns, and the first object is arranged to be substantially on the optical axis of the projection system. A platform for a first object moving in a vertical plane, irradiates the charged particle beam with a first deflector of a pattern selected from the first object, and charges the pattern passing through the selected pattern from the first object. The second deflector for particle beam vibration. 18 · If you apply for an exposure device in the scope of items 14, 15, or 16, 3 "Precautions for reading first" and fill in this page) Installation ----- I order: " ^ 此 " 慧!] | &;;,;-Bureau 3: Printed by Industrial and Consumer Cooperatives ---- # ------- The paper's meaning is applicable to China National Standard (CNS) A4 specification (21 () X2W public acid) 6 3 3 9 8 8 8 8 ABCD 6. The scope of patent application includes a measurement system for detecting the rotation information of the movable member, and corrects the charged particle line on the second object based on the rotation information detected by the measurement system. Irradiation position. 19 · If the exposure device of the scope of patent application No. 14, 15 or 16 is applied, wherein the movable member can be displaced in the first direction, the second object system is moved in the second direction substantially orthogonal to the first direction, and in the aforementioned first The direction of the first object is copied to the area on the second object that is larger than the moving distance of the movable member in one direction. 20 · An exposure device that irradiates a first object with a charged particle beam, and irradiates a charged particle beam passing through the first object pattern through a projection system to a second object, characterized in that: 'In order to move the charged particle beam in The irradiation position on the second object is provided with a mechanical drive system to vibrate at least a part of the movable member in the projection system. 21 · If the exposure device according to item 20 of the patent application scope, wherein the mechanical drive system vibrates the movable member in the first direction, in order to illuminate the 2D area on the second object through the charging of the corresponding pattern on the first object The particle beam is provided with a platform for a second object to move the second object in a second direction crossing the first direction. 22 · The exposure device according to item 21 of the scope of patent application, in order to move the irradiation position of the charged particle beam on the second object, an electronic drive system for electrically changing the electromagnetic field in the projection system is provided, and the movable part is vibrated. The movement of the component is synchronized with the movement of the aforementioned second object platform, and the above-mentioned electronic drive system is used to correct the above-mentioned charged particle line. Note on the above-mentioned second object 4 and then fill out this page.) -------- Booking " 'Γ Qihe General Wealth 4- " Printed only by the Consumer Cooperatives ------------ This paper size applies to China National Standard (CNS) A4 specifications (2) 0X2M mm) 460933 Αϋ Β8 C8 D8 6. The irradiation position on the scope of the patent application. 23 · The exposure device according to any one of claims 20 to 22 in the scope of the patent application, wherein the aforementioned mechanical drive system has: the first and second leaf spring members which are arranged in a manner to enclose the aforementioned movable members and have movability respectively; A support member that supports the leaf spring member; and a drive member that drives the movable member in a flexible direction of the two-plate leaf spring member. 24. The exposure device according to item 23 of the patent application, wherein the driving member has a pair of retractable elements respectively fixed to both sides of the first and second leaf spring members, and each pair of retractable elements The systems expand and contract in opposite phases, respectively. 25. The exposure device according to claim 20, 21, or 22, wherein the projection system is a reduced projection system, and the movable member is an electro-optical system near a part of the second object side. 26. The exposure device according to claim 20, 21, or 22, wherein the movable member is the entire projection system. 27. If the exposure device according to claim 20, 21 or 22, wherein the aforementioned mechanical drive system is provided with: a balancer arranged to surround the movable member, and holding the movable member and the equalizer in opposition A balancer holding member capable of being displaced freely, and a balancer holding member that drives the balancer; the mechanical drive system vibrates the balancer in a phase opposite to that of the movable member so as to include the movable member and the balancer Machinery 5 The agricultural paper is applied in accordance with Chinese National Standard (CNS) A4 specification (210X 29? Mm) 460933 A8 B8 C8 D8 6. The position of the center of gravity of the scope of patent application is not substantially displaced. 28. If the exposure device according to the scope of patent application No. 20, 21, or 22 is provided with a first position detector that measures the position of the movable member, the mechanical drive system is controlled based on the detection result of the first position detector. action. 29 · If the exposure device according to item 27 of the patent application scope is provided with the first and second position detectors that respectively measure the aforementioned movable member and the aforementioned balancer, the aforementioned mechanical drive is controlled based on the detection results of the two position detectors Department of action. 30. The exposure device according to any one of items 14 to 16 or 20 to 22 of the patent application IS, wherein at least a part of a path for moving the first object and the second object into the exposure device is provided There is a preparation room which can control the internal vacuum independently from other parts. 31. A manufacturing method of an exposure device is an exposure device that manufactures an exposure device that irradiates a first object with a charged particle beam and irradiates a charged particle beam that has passed through the first object pattern through a projection system to a second object, which is characterized by: The irradiation position of the charged particle beam on the second object is that at least a part of the movable member of the projection system is mounted on the supporting member in a state of free displacement or vibration; and the movable member is installed to displace or move the movable member. Vibration mechanical drive system. 32. The method for manufacturing an exposure device according to item 31 of the scope of patent application, wherein a second object platform is provided that moves the second object in a plane substantially perpendicular to the optical axis of the projection system and moves relative to the projection system. In order to move the irradiation position of the aforementioned Ningdian particle beam on the aforementioned second object 6 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (2 丨 0X297 cm) (Please read the precautions on the back before filling this page) … ..N. The Ministry of Economic Affairs ’Smart Money is printed by 460933 A8 B8 C8 D8 for the application of patents by the Bureau of Industrial and Commercial Cooperatives. It is further provided with an electronic drive system that electrically changes the electromagnetic field in the aforementioned system. g 33 · —A component manufacturing method The exposure methods of items 1 to 13 include the component map Hi especially including the steps on the workpiece using the patent application scope _.

----------- Install ------ Order ------ Quan (Please read the precautions on the back before 4 / IST page) f. The paper size printed by the consumer cooperative is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm)