WO2000079616A1 - Ecran plat a contraste ameliore - Google Patents
Ecran plat a contraste ameliore Download PDFInfo
- Publication number
- WO2000079616A1 WO2000079616A1 PCT/GB2000/002377 GB0002377W WO0079616A1 WO 2000079616 A1 WO2000079616 A1 WO 2000079616A1 GB 0002377 W GB0002377 W GB 0002377W WO 0079616 A1 WO0079616 A1 WO 0079616A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- light emitting
- intermediate layer
- back electrode
- transparent
- Prior art date
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000011777 magnesium Substances 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 239000011575 calcium Substances 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 150000004820 halides Chemical class 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims description 2
- 229910001947 lithium oxide Inorganic materials 0.000 claims description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 2
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 229910001092 metal group alloy Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 82
- 239000000463 material Substances 0.000 description 7
- 239000012044 organic layer Substances 0.000 description 7
- ZVFQEOPUXVPSLB-UHFFFAOYSA-N 3-(4-tert-butylphenyl)-4-phenyl-5-(4-phenylphenyl)-1,2,4-triazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C(N1C=2C=CC=CC=2)=NN=C1C1=CC=C(C=2C=CC=CC=2)C=C1 ZVFQEOPUXVPSLB-UHFFFAOYSA-N 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- -1 which is preferred Chemical compound 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- YXLXNENXOJSQEI-UHFFFAOYSA-L Oxine-copper Chemical class [Cu+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 YXLXNENXOJSQEI-UHFFFAOYSA-L 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000005030 aluminium foil Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 description 1
- 229910001626 barium chloride Inorganic materials 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Inorganic materials [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 1
- 150000001716 carbazoles Chemical class 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001194 electroluminescence spectrum Methods 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 125000003226 pyrazolyl group Chemical group 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 150000001629 stilbenes Chemical class 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80523—Multilayers, e.g. opaque multilayers
Definitions
- This invention relates to a non-reflective electrode which can be used in a flat panel display.
- Flat panel displays are the critical enabling technology for many current applications including laptop computers, portable displays and "head up" displays.
- the flat panel display market is dominated by liquid crystal technology, but these materials are non- emissive requiring the light source to be filtered which reduces the efficiency of the device.
- Much work is currently being undertaken on developing alternative emissive technologies including organic electroluminescent (EL) displays.
- EL organic electroluminescent
- Contrast is the difference in brightness between when a pixel is on and when it is off.
- a proportion of the ambient light that is incident on a device is reflected, so that the total light observed is the sum of the emitted light and the reflected ambient light. If the proportion of reflected ambient light is relatively large, then the contrast is poor. This is frequently the case with the current display devices. There is therefore a need to find a way of increasing contrast.
- a light emitting device which comprises sequentially a transparent substrate layer, a transparent electrode layer, a light emitting layer and a back electrode which is in the form of a layer of carbon and an at least semi- transparent intermediate layer between the light emitting layer and the back electrode, said intermediate layer having its lowest empty energy level or levels, or lowest empty energy band, positioned above the conduction band of the carbon layer when the two layers are brought into contact.
- the back electrode is a metal such as aluminium which is highly reflective and consequently the contrast is poor. By replacing this metal by a carbon layer which is substantially black contrast can be improved significantly.
- the intermediate layer is at least semi- transparent ie. it should be at least 50% transmissive, preferably at least 70% transmissive and more preferably at least 90% transmissive in the visible region (380 to 780 nm) .
- This intermediate layer serves to improve electron injection into the device, possibly by lowering the barrier to injection and/or improving the conductivity of the electrode. Without such a layer it is generally found that it is necessary to operate at a higher voltage since the carbon layer does not function so effectively as a source of electrons.
- This semi- transparent intermediate layer may be defined as the layer having its lowest empty energy level or levels, or lowest empty energy band, positioned above the conduction band of the carbon layer when the two layers are brought into contact.
- the intermediate layer is generally made of a semi- transparent metal or alloy or is a dielectric layer.
- Metals with a lower work function than carbon generally have empty energy levels above the conduction band of carbon.
- Dielectric materials generally have a large energy separation between the full HOMO (or valence band) and empty LUMO (or conduction band) and to be effective the LUMO would have to be positioned above the carbon conduction band. It will be appreciated that the values for most metals and dielectrics are known or can, if necessary, be determined.
- the intermediate layer is advantageously made of a low work function metal or alloy such as magnesium, which is preferred, aluminium, silver, calcium, lithium and indium or an alloy such as Mg/Ag or Mg/Al and Li/Al.
- the semi-transparent layer may be of a dielectric material generally of a solid ionic metal or metalloid salt, typically an oxide or halide, for example a chloride or fluoride, of a metal, typically of Group I, II or III, especially
- the dielectric has a band gap of at least 4.5 electron volts .
- metal films are normally highly reflective, a sufficiently thin metal layer is semi-transparent, transmitting rather than reflecting a large proportion of the incident visible light.
- a carbon layer is deposited behind such a thin metal layer, a significant proportion of the incident light is ultimately absorbed by the carbon film rather than reflected.
- the thickness of the intermediate layer will depend to some extent on its nature. Generally, a metal or alloy layer will have a thickness from 500 to 0.5 nm, typically 50 to 1 nm, and especially from 25 to 2 nm. Generally if the intermediate layer is made of a dielectric material, lower thicknesses are desirable, a general range being from 100 to 0.1 nm, typically 10 to 0.5 nm and preferably from 5 to 1 nm; it is preferably less than 10 nm.
- the source of carbon used for the carbon layer is not particularly critical and includes isotropic graphite, anisotropic graphite, vitreous carbon and carbon fibre although isotropic graphite of high purity is generally considered to be the best.
- the carbon layer will be thicker than the intermediate layer.
- the general thickness will range from 5 ⁇ m to 5 nm, typically from 5 ⁇ m to 500 nm if the layer is produced by, for example, screen printing or spraying.
- the layer is produced by, for example, sputtering, evaporation or low temperature chemical deposition thinner layers will generally be more suitable, for example, from 200 to 5 nm and especially from 60 to 10 nm.
- the precise nature of the deposition is unimportant provided that the layer is as uniform as possible and continuous and that the carbon layer absorbs generally at least 10% of the visible light and preferably at least 25%, especially at least 50%, of the visible light.
- a metal or alloy layer is placed behind the back electrode. This serves several purposes. It acts to protect the back electrode and it generally will have high electrical conductivity. Also the presence of the metal layer can assist production. This is because carbon deposition is relatively slow. Once the carbon layer has built up to a sufficient thickness to enhance contrast it is then beneficial to switch to the more rapid metal deposition. Apart from encapsulating the carbon layer it also serves to conduct heat away from the device which may increase the stability and life of the device.
- the metal layer which can be of the same metals or alloys as discussed above in relation to the intermediate layer, for example aluminium, will be significantly thicker than the immediate layer, typically from 10 to 2000 nm.
- the metal layer is generally of a comparable thickness to the carbon layer.
- Thicker layers can be attached to the back electrode in the form of foils. Any good heat conducting metal can be used for this purpose although, naturally, a relatively light metal is preferred in order to reduce the overall weight of the device.
- aluminium foil can be used for this purpose.
- Such a foil acts as a heat sink which facilitates high brightness where higher operating powers increase the heat dissipated in the device.
- Such layers are typically attached to the back electrode by adhesion, for example using an epoxy resin.
- the epoxy resin is preferably one which is curable at room temperature. Also it is preferred that the resin should not release byproducts on curing which could adversely affect the other components of the device. Accordingly, it is desirable that the epoxy resin should be one which is catalytically curable while, of course, it should be thermally conducting.
- suitable epoxy resins which can be used include Loctite 315 and the thermally conductive 199-1402 epoxy resins from RS components.
- the transparent electrode is the anode and the rear electrode forms the cathode.
- An electron injecting and/or transporting layer is often advantageously inserted between the light emitting layer and the cathode.
- a hole injecting and/or transporting layer may often advantageously be inserted between the light emitting layer and the anode. The nature of such layers is known in the art.
- Typical materials which can be used for this purpose include polyphilic compounds, aromatic tertiary amines including compounds in which the tertiary nitrogen atom is attached to 3 phenyl rings such as N,N'-diphenyl-N,N'-bis- (3-methyl) -1,1 ' -biphenyl-4 , 4'- diamine (TPD) , stilbenes, triazoles, oxadiazoles such as BBO (2- (4-phenylyl) -5- (4- '-butylphenyl) -1,3,4- oxadiazole, imidazoles.
- Other suitable materials can be found in US Patent No. 5,756,224 and Macromol. Symp. 125, 1 -48 (1997)
- the nature of the light emitting layer is not particularly critical although, as indicated above, it should be selected such that there is a suitable energy gap between it and the carbon layer.
- Suitable materials include organic and organo metallic molecular species including organolanthanide complexes such as di-or trivalent lanthanide metal ions complexed with one or more polydentate ligands containing one or more pyrazolyl-derived groups e.g. trispyrazolyl borates anions (see GB Application No. 9820805.1 and WO 98/55561) , light emitting polymers for example carbazoles such as PVK (poly- (9-vinyl carbazole) and quinolate complexes such as ALQ (tris- (8-hydroxy-quinoline) aluminium. Further details can be found in EP - 0120673 and US Patent Nos . 5,756,224 and 5,792,567.
- the total thickness will be from 10 nm to 1 micron and especially from 60 to 150 nm with the transport layers generally having a thickness from 20 to 80 nm.
- the transparent electrode which typically forms the anode of the device is preferably made from indium tin oxide (ITO) although other similar materials including indium oxide/tin oxide, tin oxide/antimony and zinc oxide/aluminium can also be used.
- ITO indium tin oxide
- Conducting polymers such as PANI (polyaniline) and PEDT may also be used.
- the present invention also provides a process for preparing the device which comprises depositing a transparent electrode on a transparent substrate, sequentially applying over the transparent electrode, the light emitting layer and the back electrode.
- Figure 1 shows, schematically, a typical preferred light emitting device of the present invention.
- Figure 2 shows the current-voltage characteristics of a device of the present invention and of comparative devices.
- Figure 3 shows an electroluminescent spectrum of a device of the present invention
- Figure 4 shows the cathode reflectivity of a device of the present invention compared with a comparative device .
- a light emitting device which comprises a transparent substrate 2, a transparent front electrode 4, a light emitting layer 6, an intermediate layer 8, and a carbon back layer 10.
- An eye 1 indicates the front (viewing side of the device) .
- the transparent substrate 2 is typically made of glass although other transparent dimensionally stable materials such as polyesters including PET, acrylic resins and polyamides such as nylon can also be used.
- the devices are typically made pixelated or patterned.
- the transparent electrode can be formed using standard lithography to provide electrodes as little as, for example, 10 x 10 microns.
- the carbon back electrode is deposited, for example, through a shadow mask, to give an array of contacts which may be as little as, say, 20 nm.
- both electrodes are made pixelated.
- the electrode which is not pixelated can be as large as desired, typically for a laptop computer with a diagonal dimension of 17 inches.
- Low resistance ITO coated glass (20 ohms/D) was cut into 1" x 1" (2.5 x 2.5cm) plates and patterned by standard lithography (HC1 etchant ) to give continuous electrodes (0.2mm x 0.8mm).
- the patterned ITO plates were ultrasonically cleaned for 30 min in a boiling ammonia and hydrogen peroxide aqueous solution (RSA process), and then dried in an oven at 100°C. After cleaning and drying, the substrates were placed inside a vacuum evaporator with a base pressure better than 1 x 10 "6 Torr and the organic layers were sequentially evaporated from Mo boats at a deposition rate of 0.1-0.4 nm/s as measured by a calibrated crystal thickness monitor.
- the hole transporting layer was a 40 nm thick layer of TPD
- the light emitting layer was a 34 nm thick layer of the METb013
- the electron transporting layer was a 60 nm thick layer of TAZ .
- the rear electrode (s) was deposited. The thickness and details of the contacts is explained in the individual Examples.
- EL measurements were made under forward bias (ITO positive) and the emission output was viewed in the forward direction through the transparent ITO electrode.
- the current-voltage (I-V) characteristics were measured with a Thurlby-Thandar TSX3510P programmable DC power supply and a Keithley 617 programmable electrometer both controlled by IBM compatible PC via IEEE488 interface.
- EL characteristics of the devices including the spectral and power dependencies of light output were measured with a LOT- Oriel Instaspec IV charge-coupled device (CCD) detector attached to an Oriel Multispec 1/8 M spectrograph with 400 lines/mm ruled grating.
- CCD charge-coupled device
- a fibre lined sighting optic was used to focus the image of the device to the entrance of the spectrograph.
- the system was calibrated with an Oriel 200 W QTH calibrated lamp connected to an Oriel 300 W radiometric power supply. Values of radiance and luminance were also measured with an International Light IL1700 Research Radiometer equipped with a calibrated Si photodetector . Transmission and reflection was measured with a Perkin-Elmer Lambda 19 spectrometer.
- an organic electroluminescent device was produced with a conventional Al/Mg metal cathode and a patterned ITO electrode.
- the organic layers were deposited according to the description above and then Mg and Al were sequentially evaporated (10-20 nm Mg and 100-120 nm Al) to form the contact.
- the IV curve is shown in fig 2 and the transmission curve is shown in fig 4.
- the efficiency was 4.8cd/A or ⁇ 2% external quantum efficiency.
- the maximum brightness of the device was 77 cd/m 2 at 22V, and 2.7 mA/cm 2 which corresponds to an efficiency of 2.8 cd/A.
- An organic electroluminescent device was prepared with a "black" electrode instead of an Al/Mg cathode.
- a 2 nm intermediate layer of Mg (evaporation rate 0.1-0.2 nm/s) followed by a 20 nm thick layer of carbon, followed by 20 nm of Mg, followed by -100 nm of Al were sequentially evaporated on top of the organic layers.
- the carbon was deposited by evaporation at a rate of 1 nm/s and a pressure of ⁇ 1 x 10 "6 Torr.
- the carbon source was carbon fibre .
- the IV curve is shown in Figure 2, while Figure 3 shows the EL spectrum, and Figure 4 shows the transmission curve of the device.
- Table 1 lists the best efficiency and best brightness of each device.
- a 5 nm carbon film was directly deposited on to the organic layer followed by a 100 nm Al/Mg layer.
- This Example illustrates the significance of the thin metal layer under the carbon film. When thicker carbon films were deposited directly on the organic layers the device performance was poor.
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU55485/00A AU5548500A (en) | 1999-06-18 | 2000-06-19 | Flat panel display with improved contrast |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9914372.9A GB9914372D0 (en) | 1999-06-18 | 1999-06-18 | Flat panel display with improved contrast |
GB9914372.9 | 1999-06-18 | ||
GBGB9927116.5A GB9927116D0 (en) | 1999-11-16 | 1999-11-16 | Flat panel display with improved contrast |
GB9927116.5 | 1999-11-16 |
Publications (1)
Publication Number | Publication Date |
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WO2000079616A1 true WO2000079616A1 (fr) | 2000-12-28 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/GB2000/002377 WO2000079616A1 (fr) | 1999-06-18 | 2000-06-19 | Ecran plat a contraste ameliore |
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AU (1) | AU5548500A (fr) |
WO (1) | WO2000079616A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003094255A2 (fr) * | 2002-05-03 | 2003-11-13 | Luxell Technologies Inc. | Diodes electroluminescentes organiques a contraste ameliore |
WO2004050793A1 (fr) * | 2002-12-05 | 2004-06-17 | Elam-T Limited | Dispositifs et materiaux electroluminescents |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH065367A (ja) * | 1992-06-18 | 1994-01-14 | Pioneer Electron Corp | エレクトロルミネッセンス素子 |
JPH088065A (ja) * | 1994-06-25 | 1996-01-12 | Toppan Printing Co Ltd | 薄膜型el素子 |
WO2000035028A1 (fr) * | 1998-12-08 | 2000-06-15 | Cambridge Display Technology Ltd. | Dispositifs d'affichage |
-
2000
- 2000-06-19 WO PCT/GB2000/002377 patent/WO2000079616A1/fr active Application Filing
- 2000-06-19 AU AU55485/00A patent/AU5548500A/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH065367A (ja) * | 1992-06-18 | 1994-01-14 | Pioneer Electron Corp | エレクトロルミネッセンス素子 |
JPH088065A (ja) * | 1994-06-25 | 1996-01-12 | Toppan Printing Co Ltd | 薄膜型el素子 |
WO2000035028A1 (fr) * | 1998-12-08 | 2000-06-15 | Cambridge Display Technology Ltd. | Dispositifs d'affichage |
Non-Patent Citations (3)
Title |
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GYOUTOKU A ET AL: "AN ORGANIC ELECTROLUMINESCENT DOT-MATRIX DISPLAY USING CARBON UNDERLAYER", SYNTHETIC METALS,CH,LAUSANNE, vol. 91, no. 1/03, 21 May 1997 (1997-05-21), pages 73 - 75, XP000890057, ISSN: 0379-6779 * |
PATENT ABSTRACTS OF JAPAN vol. 018, no. 195 (E - 1533) 5 April 1994 (1994-04-05) * |
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 05 31 May 1996 (1996-05-31) * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003094255A2 (fr) * | 2002-05-03 | 2003-11-13 | Luxell Technologies Inc. | Diodes electroluminescentes organiques a contraste ameliore |
WO2003094255A3 (fr) * | 2002-05-03 | 2004-02-05 | Luxell Technologies Inc | Diodes electroluminescentes organiques a contraste ameliore |
WO2004050793A1 (fr) * | 2002-12-05 | 2004-06-17 | Elam-T Limited | Dispositifs et materiaux electroluminescents |
JP2006509008A (ja) * | 2002-12-05 | 2006-03-16 | エラム−ティー リミテッド | エレクトロルミネッセンス物質および装置 |
US7718275B2 (en) | 2002-12-05 | 2010-05-18 | Merck Patent Gmbh | Electroluminescent materials and devices |
Also Published As
Publication number | Publication date |
---|---|
AU5548500A (en) | 2001-01-09 |
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