WO2000062347A2 - Solarzelle sowie verfahren zur herstellung einer solarzelle - Google Patents
Solarzelle sowie verfahren zur herstellung einer solarzelle Download PDFInfo
- Publication number
- WO2000062347A2 WO2000062347A2 PCT/DE2000/001073 DE0001073W WO0062347A2 WO 2000062347 A2 WO2000062347 A2 WO 2000062347A2 DE 0001073 W DE0001073 W DE 0001073W WO 0062347 A2 WO0062347 A2 WO 0062347A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- absorber layer
- carrier
- layer
- solar cell
- copper
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000010949 copper Substances 0.000 claims abstract description 37
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052802 copper Inorganic materials 0.000 claims abstract description 33
- 239000011669 selenium Substances 0.000 claims abstract description 33
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 28
- 229910052738 indium Inorganic materials 0.000 claims abstract description 14
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 14
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 8
- 239000006096 absorbing agent Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 17
- 239000011593 sulfur Substances 0.000 claims description 12
- 229910052717 sulfur Inorganic materials 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 6
- 239000000470 constituent Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 238000009795 derivation Methods 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 238000005496 tempering Methods 0.000 claims description 3
- 239000002800 charge carrier Substances 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 239000000110 cooling liquid Substances 0.000 claims 1
- 230000002123 temporal effect Effects 0.000 claims 1
- 239000005864 Sulphur Substances 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 76
- 210000004027 cell Anatomy 0.000 description 43
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 13
- 238000000151 deposition Methods 0.000 description 9
- 238000004070 electrodeposition Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 210000000678 band cell Anatomy 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000012876 carrier material Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 150000002739 metals Chemical group 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 101000687808 Homo sapiens Suppressor of cytokine signaling 2 Proteins 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- -1 In2Se3 / Ga2Se3 Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 102100024784 Suppressor of cytokine signaling 2 Human genes 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- BFAKENXZKHGIGE-UHFFFAOYSA-N bis(2,3,5,6-tetrafluoro-4-iodophenyl)diazene Chemical compound FC1=C(C(=C(C(=C1F)I)F)F)N=NC1=C(C(=C(C(=C1F)F)I)F)F BFAKENXZKHGIGE-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000013084 building-integrated photovoltaic technology Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 238000009432 framing Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- IRPLSAGFWHCJIQ-UHFFFAOYSA-N selanylidenecopper Chemical compound [Se]=[Cu] IRPLSAGFWHCJIQ-UHFFFAOYSA-N 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- VPQBLCVGUWPDHV-UHFFFAOYSA-N sodium selenide Chemical compound [Na+].[Na+].[Se-2] VPQBLCVGUWPDHV-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
- H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to a solar cell which has an absorber layer which is arranged on a flexible and band-shaped carrier and in which the absorber layer at least partially contains copper, at least one element from the group of indium and gallium and at least one element from the group of selenium and sulfur and in which the absorber layer is at least partially p-type.
- the invention further relates to a method for producing a solar cell, in which a flexible and ribbon-shaped support is provided with an absorber layer and in which the absorber layer is at least partially made of copper, at least one element from the group indium and gallium and at least one element from the group Selenium and sulfur is produced and in which the absorber layer is provided with p-conducting properties at least in some areas.
- Thin-film solar cells are generally produced by first applying a transparent, electrically conductive layer to special silicate glass (solar glass) and then vapor-deposition silicon with various doping. In turn, a conductive layer is applied as the cover layer, but this does not need to be translucent. Through the use of masks, a separation of the layers using a laser and the successive sequence of the processing steps described, the entire area is structured in such a way that a large number of individual cells that are electrically connected in series. Through contacting, protective cover on the back and framing of the entire structure, a thin-film solar module is created which is used to convert light energy into electrical power (regenerative power generation). Solar modules are also known in which copper-indium-selenide (CIS) was vapor-deposited on glass instead of silicon.
- CIS copper-indium-selenide
- Solar modules are available under the trade name UNISOLAR, in which silicon was vapor-deposited on a long stainless steel strip in a high vacuum ("roll-to-roll” process). The tape is then cut at the non-vaporized points and the individual cells are electrically and mechanically combined to form solar modules.
- a specialty here is the production of tandem or triple cells, in which two or three spectrally differently sensitive silicon cells are layered on top of one another. Such a tandem cell on a glass substrate, manufactured in a high vacuum, was already produced in CIS technology by the Hahn-Meitner-Institut Berlin and was shown for the first time at the 1998 technical fair in Hanover.
- DE 196 34 580 proposes to use the shingle technique known per se, the question of undesirable contacts between the copper and the conductive cover layers at the edges and the interfaces of the band being open remains.
- the object of the present invention is therefore to construct a solar cell of the type mentioned in the introduction in such a way that both low production costs and high electrical efficiency are achieved.
- the object is achieved in that the absorber layer is at least partially applied galvanically to the carrier, that the components of the absorber layer are relative to each other in a stoichiometric. trical ratio and that the absorber layer is heat-treated after its application to the carrier.
- Another object of the present invention is to improve a method of the type mentioned in the introduction in such a way that large-scale production of the solar cells is supported at low production prices.
- the absorber layer is at least partially applied galvanically to the carrier, in that the constituents of the absorber layer are deposited in a stoichiometric ratio relative to one another and in that the absorber layer is subjected to a heat treatment after it has been applied to the carrier.
- the strip is guided continuously or clocked through several "galvanic" baths, with CIS (copper, indium and selenium) being electromechanical on the cell areas. is mixed homogeneously.
- a further, homogeneous copper cover layer can preferably be applied galvanically to these galvanically produced layers or, alternatively, copper doping can be carried out.
- the strip can be passed through a so-called "lamp oven", the mixing and the microcrystalline structure of the CIS layer being optimized by heating the coated areas in a precisely metered manner in terms of time and temperature.
- the cover layer made of metallic copper and a layer of copper selenium which may be located below it can be selectively removed by etching.
- a transparent, n-conductive cover layer for example zinc oxide, can be applied to the entire strip.
- the flexible carrier is cut in the area of the insulating layer, so that individual cells are formed whose top layer (ITO) and base layer are electrically conductive, but are reliably insulated from one another.
- the method proposed according to the invention can be carried out in such a way that an approximately 35 mm wide and fractional millimeter thick stainless steel strip is used.
- This has the advantage that a width of 35 mm is an international standard for flexible printed circuit boards, which creates equipment advantages in the manufacture of solar cells.
- the number of contacts when the cells are connected to modules, which also presents a certain problem in shingle technology, is considerably reduced compared to a band cell that is only 10 mm wide, for example.
- an insulating layer made of an electrically non-conductive and highly temperature-resistant material can also be applied to the carrier in such a way that delimited, uncoated areas are formed, on which the CIS is later deposited.
- ternary i.e. at the same time, copper, indium and selenium are deposited electrochemically in one pass through an appropriate bath. Precautions must be taken to ensure that the concentration of the electrolytes remains constant, that no gas bubbles adhere to the layer (risk of "pinholes") and that other inhomogeneities are avoided.
- ternary deposition it can prove to be expedient to break down the deposition of the elements into sub-steps, for example first applying binary indium + selenium and then copper. Certain advantages arise if first binary copper + selenium, then indium + selenium are deposited at the same time.
- the "mixing" is then carried out by heating in the lamp furnace, the temperature, the residence time and the heating and cooling gradients having to be optimized differently depending on the layer structure selected.
- the strip is fed into an annealing furnace, it being advantageous to supply the strip with the required thermal energy not by heat conduction, but rather by heat radiation.
- the temperature, the time gradient of the heating (which seems to be important for the crystallization process) and the residence time can be set up as desired.
- the cooling process is controlled in terms of speed and course (bottom to top or vice versa) by cooling the contact surface and / or blowing in cooled protective gas.
- tempering CIS cells A known problem in tempering CIS cells is the volatility of selenium, which destroys any optimal stoichiometric balance that may be present.
- selenium steam By adding selenium steam, it is necessary to "re-select" in the tempering furnace ("selenization furnace"); In the lamp furnace, as used for the production of CIS cells according to the invention, this is avoided by, on the one hand, using the lowest possible temperatures, and on the other hand, the heating takes place very quickly by means of correspondingly strong light radiation on the covering copper layer of the strip. If this is not sufficient, an excess pressure of the protective gas atmosphere (eg nitrogen) can be set in the lamp furnace. Annealing under excess pressure the structuring of the band according to the invention in areas and the clocked feed almost inevitably presupposes this, but this can in principle also be carried out with a rapidly continuously running band cell.
- the protective gas atmosphere eg nitrogen
- the irradiation of light on the upper side of the band leads to a temperature gradient in the layer, which can be advantageous with regard to the diffusion out of the band or with regard to the load on lower layers when building a tandem cell structure.
- the strip After leaving the lamp furnace, the strip is largely removed by etching in the fifth process step, i.e.
- individual conductor tracks made of Cu remain, which take over the low-resistance derivation of the electrons generated by the photon absorption and field separation instead of the grid (usually "printed” with silver paste), usually printed with silver paste.
- the "etched free" surface of the cell is provided with a transparent, highly electrically conductive cover layer ("ITO window electrode").
- ITO window electrode a transparent, highly electrically conductive cover layer
- This is done, for example, by spray pyrolysis of zinc oxide; It is advantageous that the cell area was delimited in step 1 by an insulator, so that an exact delimitation of the areas affected by the spraying is now not necessary: applying the electrically conductive layer beyond the cell edge does not lead to short circuits or reworking.
- the finished, for example 40 cm long and 35 mm wide, CIS solar cells are produced by cutting the tape outside the cell areas. Instead of the shingle-like connection proposed in DE 196 34 589, they are preferably electrically connected to one another by means of interposed "spacers".
- the finished arrangement of, for example, 40 cells in series connection is covered in a so-called “laminator 1 in a slight vacuum under pressure and heat on the front with a transparent TEDLAR ° film and on the back with the EVA film customary in solar technology and protected against weather influences.
- the resulting arrangement of solar cells is called a “laminate”, which is further processed into a “standard solar module” by providing it with a frame and a cable junction box.
- the carrier consists of at least one metal and the back electrode of the solar cell forms that the absorber layer is at least partially applied galvanically to the carrier is that the constituents of the absorber layer copper, indium / gallium and selenium / sulfur are present in a stoichometric ratio of 1: 1: 2 or with a slight excess of selenium and that the absorber layer is heat-treated in a device after it has been applied to the carrier in such a way that it is converted into pure, single-phase crystalline copper indium / gallium diselenide / sulfide with at least some p-type characteristics.
- one or more matching, base, contact or adhesive layers are applied before the application of the absorber layer, preferably by electrochemical deposition.
- the layers which form the absorber by sequential electrochemical deposition of the metals copper, indium / gallium and selenium or by binary deposition of compound semiconductors according to the formula "Cu2Se plus In2Se3 / Ga2Se3 equal to 2 Culn / GaSe2" or by ternary Deposition or by a mixture of metal deposition and deposition of compound semiconductors such as Cu, In2Se3 / Ga2Se3, Se takes place with a precisely determined thickness in such a way that the proportions are correct or a small excess of selenium is present.
- a sodium-containing compound for example sodium selenide
- a sodium-containing compound for example sodium selenide
- the constituents of the absorber layer were "recrystallized" by heating to temperatures above 500 ° Celsius under a protective gas atmosphere to form a uniform, pure and p-conducting CIS2 layer, with a very rapid rise in temperature and a short duration of the Heating, by a very small volume above the absorber layer and / or by an overpressure of the protective gas atmosphere, evaporation of selenium / sulfur and the formation of other crystalline phases is prevented or made more difficult.
- FIG. 2 a top view of the arrangement according to FIG. 1
- Fig. 3 an example of the structure of a heat treatment furnace.
- Fig. 1 shows a flexible carrier (1) which is provided with a surface (2) on which an absorber layer (3) is arranged. Insulating layers (4) extend along edge regions and a copper cover layer (5) is applied to the absorber layer (3) in this embodiment. Alternatively, doping with copper can also be used, for example. be lized. In the area of the side of the absorber layer (3) facing away from the carrier (1), a cover layer (6) is arranged, which can be formed, for example, as an ITO layer.
- the flexible carrier (1) is unwound from a roll (7) and passed through an interior (8) of the temperature control device (9).
- the cover layer (5) and intermediate cell areas (10) are located on the carrier (1).
- a material (11), which can be sulfur or selenium, for example, is applied in the conveying direction next to the absorber layer (3).
- the temperature control device (9) has a transparent lower cover (12) and a semi-transparent upper cover (13).
- a protective gas atmosphere is arranged in the area of the interior (8) and the interior (8) is enclosed by a translucent housing (14).
- Heat radiators (15) of a first control circuit are arranged below the housing (14) and heat radiators (16) of a second control circuit and heat radiators (17) of a third control circuit are positioned above the housing (13).
- the heat radiators (15) of the first control loop are essentially opposite the heat radiators of the third control loop.
- the heat radiators of the second control circuit are arranged in the transport direction of the carrier (1) from the roll (7) to a take-up roll (18) in front of or behind the heat radiators (17) of the third control circuit. arranges.
- the lower cover (12) is provided with cooling (19), which can be formed, for example, from cooling channels through which a cooling medium flows.
- cooling (19) can be formed, for example, from cooling channels through which a cooling medium flows.
- locks (20) are arranged in the inlet area and in the outlet area of the housing (14).
- the carrier (1) can be made of different materials. In particular, the use of copper is thought of. Alternatively, steel strips or carrier materials made of flexible plastics can also be used.
- the insulating layer (4) is arranged in such a way that the cell areas remain free.
- the electrodeposition of the absorber layer (4) can be carried out, for example, in such a way that an electrochemical deposition of the metals copper, indium and / or gallium and selenium is carried out sequentially.
- the heat treatment of the absorber layer (3) within the furnace described in FIG. 3 takes place during the cycle operation of the carrier (1) through the furnace.
- sulfur or selenium is supplied in vapor form.
- these elements are deposited on the intermediate cell area (10).
- a regulation of the heat supply is divided into at least two control loops, so that the cell areas and the intermediate cell areas can be heated differently.
- the sulfur and selenium in the intercell area is first evaporated and then this area is used to condense the remaining steam.
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU50592/00A AU5059200A (en) | 1999-04-10 | 2000-04-10 | Solar cell and method for producing a solar cell |
EP00934884A EP1177584A2 (de) | 1999-04-10 | 2000-04-10 | Solarzelle sowie verfahren zur herstellung einer solarzelle |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19917758.9 | 1999-04-10 | ||
DE19917758A DE19917758C2 (de) | 1999-04-10 | 1999-04-10 | Verfahren zur Herstellung einer CuInSe2(CIS)Solarzelle |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2000062347A2 true WO2000062347A2 (de) | 2000-10-19 |
WO2000062347A3 WO2000062347A3 (de) | 2001-03-01 |
Family
ID=7905163
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2000/001073 WO2000062347A2 (de) | 1999-04-10 | 2000-04-10 | Solarzelle sowie verfahren zur herstellung einer solarzelle |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1177584A2 (de) |
AU (1) | AU5059200A (de) |
DE (1) | DE19917758C2 (de) |
WO (1) | WO2000062347A2 (de) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10247402A1 (de) * | 2002-10-03 | 2004-04-22 | Cis Solartechnik Gmbh | Substrat-Aufbau für flexible CIS-Solarzellen |
JP2005524244A (ja) * | 2002-04-29 | 2005-08-11 | エレクトリシテ ド フランス セルビス ナショナル | I−iii−vi2化合物を基礎とする光起電性用途向け薄膜半導体の製造方法 |
EP2128903A1 (de) | 2008-05-30 | 2009-12-02 | Atotech Deutschland Gmbh | Galvanisierungszusatz zum Auftragen eines Metalls oder einer binären, ternären, quaternären oder pentanären Legierung von Elementen der Gruppe 11 (IB)-Gruppe 13 (IIIA)-Gruppe 16 (VIA) |
EP2159846A1 (de) | 2008-08-29 | 2010-03-03 | ODERSUN Aktiengesellschaft | Dünnfilmsolarzelle und photovoltaische Stranganordnung |
DE102008049374A1 (de) | 2008-09-27 | 2010-04-01 | JODLAUK, Jörg | Halbleiterfaserstrukturen als Energieerzeuger |
CN102484169A (zh) * | 2009-09-09 | 2012-05-30 | 国际商业机器公司 | 控制光生伏打薄膜成分的方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004013442B4 (de) * | 2004-03-14 | 2006-05-24 | Klaus Dr. Kalberlah | Verfahren zur Herstellung von bandförmigen Solarzellen der CIS-Technologie |
DE102006041046A1 (de) * | 2006-09-01 | 2008-03-06 | Cis Solartechnik Gmbh & Co. Kg | Solarzelle, Verfahren zur Herstellung von Solarzellen sowie elektrische Leiterbahn |
WO2009030281A1 (en) * | 2007-09-07 | 2009-03-12 | ETH Zürich | Method of forming thin film solar cell |
DE102008020749A1 (de) * | 2008-04-22 | 2009-10-29 | Cis Solartechnik Gmbh & Co. Kg | Verfahren zur Herstellung einer Solarzelle |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19634580A1 (de) * | 1996-08-27 | 1998-03-05 | Inst Solar Technologien | CIS-Bandsolarzelle - Verfahren und Vorrichtung zu ihrer Herstellung |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4103291A1 (de) * | 1990-09-22 | 1992-04-02 | Battelle Institut E V | Verfahren zur herstellung einer absorberschicht fuer solarzellen mit hilfe galvanischer abscheidetechnik |
DE4225385C2 (de) * | 1992-07-31 | 1994-09-29 | Siemens Solar Gmbh | Verfahren zur kostengünstigen Herstellung einer Schicht eines ternären Verbindungshalbleiters |
JP3386127B2 (ja) * | 1992-09-22 | 2003-03-17 | シーメンス アクチエンゲゼルシヤフト | 基板上に黄銅鉱半導体を迅速に作成する方法 |
-
1999
- 1999-04-10 DE DE19917758A patent/DE19917758C2/de not_active Expired - Fee Related
-
2000
- 2000-04-10 WO PCT/DE2000/001073 patent/WO2000062347A2/de active Application Filing
- 2000-04-10 AU AU50592/00A patent/AU5059200A/en not_active Abandoned
- 2000-04-10 EP EP00934884A patent/EP1177584A2/de not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19634580A1 (de) * | 1996-08-27 | 1998-03-05 | Inst Solar Technologien | CIS-Bandsolarzelle - Verfahren und Vorrichtung zu ihrer Herstellung |
Non-Patent Citations (7)
Title |
---|
BASOL B M ET AL: "FLEXIBLE AND LIGHT WEIGHT COPPER INDIUM DISELENIDE SOLAR CELLS ON POLYMIDE SUBSTRATES" SOLAR ENERGY MATERIALS AND SOLAR CELLS,NL,ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, Bd. 43, Nr. 1, 15. August 1996 (1996-08-15), Seiten 93-98, XP000627656 ISSN: 0927-0248 * |
GUILLEMOLES J -F ET AL: "ONE STEP ELECTRODEPOSITION OF CULNSE2: IMPROVED STRUCTURAL, ELECTRONIC, AND PHOTOVOLTAIC PROPERTIES BY ANNEALING UNDER HIGH SELENIUM PRESSURE" JOURNAL OF APPLIED PHYSICS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, Bd. 79, Nr. 9, 1. Mai 1996 (1996-05-01), Seiten 7293-7302, XP000594523 ISSN: 0021-8979 * |
K. JACOBS ET AL.: "CISCuT- a non vacuum roll to roll technique for the preparation of copper indium chalcogenide absorber layers on a copper tape" 2ND WORLD CONFERENCE ON PHOTOVOLTAIC SOLAR ENERGY CONVERSION , Bd. 1, 6. - 10. Juli 1998, Seiten 409-412, XP002148778 VIENNA, AT * |
KAMPMANN A ET AL: "A CADMIUM-FREE CUINSE2 SUPERSTRATE SOLAR CELL FABRICATED BY ELECTRODEPOSITION USING A ITO/IN2SE3/CUINSE2/AU STRUCTURE" PROGRESS IN PHOTOVOLTAICS. RESEARCH AND APPLICATIONS,GB,JOHN WILEY AND SONS, CHICHESTER, Bd. 7, Nr. 2, März 1999 (1999-03), Seiten 129-135, XP000835068 ISSN: 1062-7995 * |
PENNDORF J ET AL: "CuInS2 thin film formation on a Cu tape substrate for photovoltaic applications" SOLAR ENERGY MATERIALS AND SOLAR CELLS,NL,ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, Bd. 53, Nr. 3-4, Juni 1998 (1998-06), Seiten 285-298, XP004148855 ISSN: 0927-0248 * |
RAFFAELLE R P ET AL: "Electrodeposited CdS on CIS pn junctions" SOLAR ENERGY MATERIALS AND SOLAR CELLS,NL,ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, Bd. 57, Nr. 2, 26. Februar 1999 (1999-02-26), Seiten 167-178, XP004157014 ISSN: 0927-0248 * |
YUKAWA T ET AL: "ELECTRODEPOSITION OF CUINS2 FROM AQUEOUS SOLUTION (II) ELECTRODEPOSITION OF CUINS2 FILM" THIN SOLID FILMS,CH,ELSEVIER-SEQUOIA S.A. LAUSANNE, Bd. 286, Nr. 1/02, 30. September 1996 (1996-09-30), Seiten 151-153, XP000690723 ISSN: 0040-6090 * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005524244A (ja) * | 2002-04-29 | 2005-08-11 | エレクトリシテ ド フランス セルビス ナショナル | I−iii−vi2化合物を基礎とする光起電性用途向け薄膜半導体の製造方法 |
US7026258B2 (en) | 2002-04-29 | 2006-04-11 | Electricite De France Service National | Method for making thin-film semiconductors based on I-III-VI2 compounds, for photovoltaic applications |
DE10247402A1 (de) * | 2002-10-03 | 2004-04-22 | Cis Solartechnik Gmbh | Substrat-Aufbau für flexible CIS-Solarzellen |
EP2128903A1 (de) | 2008-05-30 | 2009-12-02 | Atotech Deutschland Gmbh | Galvanisierungszusatz zum Auftragen eines Metalls oder einer binären, ternären, quaternären oder pentanären Legierung von Elementen der Gruppe 11 (IB)-Gruppe 13 (IIIA)-Gruppe 16 (VIA) |
US8828278B2 (en) | 2008-05-30 | 2014-09-09 | Atotech Deutschland Gmbh | Electroplating additive for the deposition of metal, a binary, ternary, quaternary or pentanary alloy of elements of group 11 (IB)—group 13 (IIIA)—Group 16 (VIA) |
EP2159846A1 (de) | 2008-08-29 | 2010-03-03 | ODERSUN Aktiengesellschaft | Dünnfilmsolarzelle und photovoltaische Stranganordnung |
DE102008049374A1 (de) | 2008-09-27 | 2010-04-01 | JODLAUK, Jörg | Halbleiterfaserstrukturen als Energieerzeuger |
CN102484169A (zh) * | 2009-09-09 | 2012-05-30 | 国际商业机器公司 | 控制光生伏打薄膜成分的方法 |
Also Published As
Publication number | Publication date |
---|---|
DE19917758A1 (de) | 2000-10-19 |
AU5059200A (en) | 2000-11-14 |
WO2000062347A3 (de) | 2001-03-01 |
DE19917758C2 (de) | 2003-08-28 |
EP1177584A2 (de) | 2002-02-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0715358B1 (de) | Verfahren zur Herstellung einer Solarzelle mit Chalkopyrit-Absorberschicht und so hergestellte Solarzelle | |
DE69907866T2 (de) | Verfahren zum Herstellen von Dünnschicht-Solarzellen-Modulen | |
EP0922303B1 (de) | Cis-bandsolarzelle-verfahren und vorrichtung zu ihrer herstellung | |
DE19912961B4 (de) | Halbleiterdünnfilm, Herstellungsverfahren dafür, sowie den Halbleiterdünnfilm aufweisende Solarzelle | |
DE102012100795B4 (de) | Superstrat-Solarzelle und Verfahren zu deren Herstellung | |
DE4134261C2 (de) | Verfahren zum Bilden eines Satzes von Einkristallhalbleitern auf einem bandförmigen Substrat und Verwendung des Verfahrens zur Herstellung einer Solarzelle | |
DE102012103243B4 (de) | Verfahren zur zeitlichen Veränderung der Laserintensität während des Ritzens einer Photovoltaikvorrichtung | |
DE102011018268A1 (de) | Single Junction CIGS/CIC Solar Module | |
DE102013104232B4 (de) | Solarzelle | |
DE2722045A1 (de) | Verfahren zur herstellung duenner halbleiterschichten und -laminate sowie von solarzellen und danach erhaltene schichten, laminate und bauelemente, insbesondere solarzellen | |
WO2001057932A1 (de) | Flexibles metallisches substrat für cis-solarzellen und verfahren zu seiner herstellung | |
EP0535522A2 (de) | Verfahren zur Herstellung von pn CdTe/CdS-Dünnschichtsolarzellen | |
DE10113782A1 (de) | Solarzelle und Verfahren zu ihrer Herstellung | |
EP0460287A1 (de) | Neuartige Chalkopyrit-Solarzelle | |
DE102011054716A1 (de) | Gemischtes Sputtertarget aus Cadmiumsulfid und Cadmiumtellurid und Verfahren zu ihrer Verwendung | |
DE3727826A1 (de) | Serienverschaltetes duennschicht-solarmodul aus kristallinem silizium | |
DE102011054795A1 (de) | Verfahren zum Abscheiden von Cadmiumsulfid-Schichten mittels zerstäuben zum Einsatz in photovoltaischen Dünnfilmvorrichtungen auf Cadmiumtellurid-Grundlage | |
DE3727823A1 (de) | Tandem-solarmodul | |
EP1177584A2 (de) | Solarzelle sowie verfahren zur herstellung einer solarzelle | |
DE2846096A1 (de) | Solarzelle aus halbleitermaterial | |
DE102012216026B4 (de) | Verfahren zur Herstellung einer flexiblen Photovoltaik-Dünnschichtzelle mit einer Eisendiffusionsbarriereschicht und flexible Photovoltaik-Dünnschichtzelle mit einer Eisendiffusionsbarriereschicht | |
DE3113130A1 (de) | Cadmiumsulfidphotoelement und verfahren zu seiner herstellung | |
DE102012104616B4 (de) | Verfahren zum Bilden einer Fensterschicht in einer Dünnschicht-Photovoltaikvorrichtung auf Cadmiumtelluridbasis | |
WO2014128032A1 (de) | Halbleiterbauelement, insbesondere solarzelle und verfahren zum herstellen einer metallischen kontaktierungsstruktur eines halbleiterbauelements | |
DE102011054794A1 (de) | Gemischte Sputtertargets und ihre Verwendung in Cadmiumsulfidschichten von Cadmiumtelluriddünnschichtphotovoltaikeinrichtungen |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DK EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG US UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
AK | Designated states |
Kind code of ref document: A3 Designated state(s): AE AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DK EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG US UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A3 Designated state(s): GH GM KE LS MW SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2000934884 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 2000934884 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: JP |