WO2000041240A1 - Vertikal integrierte schaltungsanordnung - Google Patents
Vertikal integrierte schaltungsanordnung Download PDFInfo
- Publication number
- WO2000041240A1 WO2000041240A1 PCT/DE1999/004055 DE9904055W WO0041240A1 WO 2000041240 A1 WO2000041240 A1 WO 2000041240A1 DE 9904055 W DE9904055 W DE 9904055W WO 0041240 A1 WO0041240 A1 WO 0041240A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- integrated circuit
- circuits
- control device
- vertically integrated
- integrated circuits
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/74—Masking faults in memories by using spares or by reconfiguring using duplex memories, i.e. using dual copies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
- H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the invention relates to a vertically integrated circuit arrangement according to claim 1.
- Such external interference can be triggered, for example, by quantum mechanically detectable particles.
- the likelihood of such "impacts” caused by external influences increases in particular to the extent that the semiconductor structures, as is customary in space technology, leave the protective earth atmosphere.
- Electronic circuits are therefore usually covered with gold and silver foils in these applications to cause at least some absorption of the above particles.
- the invention is therefore based on the task of integrated
- control device determines a statistical result of redundant functionalities.
- At least two integrated circuits are provided according to the invention, which are formed on two semiconductor chips 1 and 2 lying one above the other.
- the semiconductor chips 1 and 2 have an active zone la or 2a on one of their surfaces, in which the integrated circuits are formed using conventional technology. So that the arrangement shown can work as a whole as a vertically integrated circuit arrangement, contacts are provided which are shown only once in the figure by way of example, but are to be formed in the necessary number.
- the active areas 1 a and 2 a have contact points 1 b and 2 b lying one above the other.
- a through opening 7 is formed in the semiconductor chip 1, which opening is filled with a conductive material 6 and in this way connects the contacts 1b and 2b to one another.
- the two semiconductor chips 1 and 2 now have largely identical functionality in their respective active regions 1 a and 2 a. This is in the form of an integrated circuit.
- a control device is additionally provided in at least one of the active regions of the two semiconductor chips. This controls the cooperation between the two integrated circuits in the two semiconductor chips 1 and 2.
- the first procedure is described below. For example, find data processing processes in both semi- terchips, which have identical functionality as described above, take place in parallel, the control device determines a statistical result from the two processes running in parallel. This is more likely if you assume a random interference from particle bombardment.
- the probability is additionally increased by more than two semiconductor chips lying one on top of the other.
- control device which is not shown in detail but is arranged as an integrated circuit in one of the active regions la or 2a of the first or second semiconductor chips 1 or 2, distributes the work of the further integrated circuits with the same functionality according to a specific procedure. Since the functionality of the two is the same, a circuit analysis cannot determine the manner in which processes take place on the semiconductor chip 1 or on the semiconductor chip 2. Rather, seen that the control device can carry out data processing, for example, on the semiconductor chip 1 or on the semiconductor chip 2 by means of a random control.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Semiconductor Integrated Circuits (AREA)
- Storage Device Security (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99964450A EP1060512A1 (de) | 1998-12-30 | 1999-12-21 | Vertikal integrierte schaltungsanordnung |
KR1020007009608A KR20010083778A (ko) | 1998-12-30 | 1999-12-21 | 버티컬 집적 회로 장치 |
BR9908393-0A BR9908393A (pt) | 1998-12-30 | 1999-12-21 | Disposição de circuito integrado vertical |
JP2000592881A JP2002534808A (ja) | 1998-12-30 | 1999-12-21 | 縦型の集積回路装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19860817.9 | 1998-12-30 | ||
DE19860817 | 1998-12-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000041240A1 true WO2000041240A1 (de) | 2000-07-13 |
Family
ID=7893178
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE1999/004055 WO2000041240A1 (de) | 1998-12-30 | 1999-12-21 | Vertikal integrierte schaltungsanordnung |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1060512A1 (de) |
JP (1) | JP2002534808A (de) |
KR (1) | KR20010083778A (de) |
CN (1) | CN1292151A (de) |
BR (1) | BR9908393A (de) |
WO (1) | WO2000041240A1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10958451B2 (en) | 2014-04-09 | 2021-03-23 | Ictk Holdings Co., Ltd. | Authentication apparatus and method |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2951762A1 (de) * | 1978-12-27 | 1980-07-10 | Hitachi Ltd | Halbleitervorrichtung |
EP0238089A2 (de) * | 1986-03-20 | 1987-09-23 | Fujitsu Limited | Dreidimensionale integrierte Schaltung und deren Herstellungsverfahren |
EP0454447A2 (de) * | 1990-04-26 | 1991-10-30 | Hitachi, Ltd. | Zusammenbau von Halbleiteranordnungen |
WO1994026083A1 (en) * | 1993-04-23 | 1994-11-10 | Irvine Sensors Corporation | Electronic module comprising a stack of ic chips |
EP0732107A2 (de) * | 1995-03-16 | 1996-09-18 | Kabushiki Kaisha Toshiba | Abschirmvorrichtung für ein Schaltungssubstrat |
WO1997022990A1 (en) * | 1995-12-20 | 1997-06-26 | Intel Corporation | Secure semiconductor device |
-
1999
- 1999-12-21 KR KR1020007009608A patent/KR20010083778A/ko not_active Application Discontinuation
- 1999-12-21 WO PCT/DE1999/004055 patent/WO2000041240A1/de not_active Application Discontinuation
- 1999-12-21 EP EP99964450A patent/EP1060512A1/de not_active Withdrawn
- 1999-12-21 JP JP2000592881A patent/JP2002534808A/ja not_active Abandoned
- 1999-12-21 CN CN99803434A patent/CN1292151A/zh active Pending
- 1999-12-21 BR BR9908393-0A patent/BR9908393A/pt not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2951762A1 (de) * | 1978-12-27 | 1980-07-10 | Hitachi Ltd | Halbleitervorrichtung |
EP0238089A2 (de) * | 1986-03-20 | 1987-09-23 | Fujitsu Limited | Dreidimensionale integrierte Schaltung und deren Herstellungsverfahren |
EP0454447A2 (de) * | 1990-04-26 | 1991-10-30 | Hitachi, Ltd. | Zusammenbau von Halbleiteranordnungen |
WO1994026083A1 (en) * | 1993-04-23 | 1994-11-10 | Irvine Sensors Corporation | Electronic module comprising a stack of ic chips |
EP0732107A2 (de) * | 1995-03-16 | 1996-09-18 | Kabushiki Kaisha Toshiba | Abschirmvorrichtung für ein Schaltungssubstrat |
WO1997022990A1 (en) * | 1995-12-20 | 1997-06-26 | Intel Corporation | Secure semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JP2002534808A (ja) | 2002-10-15 |
KR20010083778A (ko) | 2001-09-01 |
BR9908393A (pt) | 2000-10-31 |
EP1060512A1 (de) | 2000-12-20 |
CN1292151A (zh) | 2001-04-18 |
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