WO2000026966A1 - Dispositif et mosaique d'imagerie a semi-conducteurs - Google Patents
Dispositif et mosaique d'imagerie a semi-conducteurs Download PDFInfo
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- WO2000026966A1 WO2000026966A1 PCT/JP1999/003856 JP9903856W WO0026966A1 WO 2000026966 A1 WO2000026966 A1 WO 2000026966A1 JP 9903856 W JP9903856 W JP 9903856W WO 0026966 A1 WO0026966 A1 WO 0026966A1
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- Prior art keywords
- solid
- state imaging
- shift register
- imaging device
- wiring
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- 238000003384 imaging method Methods 0.000 title claims abstract description 158
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 238000010586 diagram Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000009958 sewing Methods 0.000 description 2
- 206010047571 Visual impairment Diseases 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/41—Extracting pixel data from a plurality of image sensors simultaneously picking up an image, e.g. for increasing the field of view by combining the outputs of a plurality of sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/767—Horizontal readout lines, multiplexers or registers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/1506—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with addressing of the image-sensor elements
- H04N3/1512—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with addressing of the image-sensor elements for MOS image-sensors, e.g. MOS-CCD
Definitions
- the present invention relates to a solid-state imaging device and a solid-state imaging device array, and more particularly, to an X-Y address type solid-state imaging device that sequentially reads signals from photoelectric conversion elements based on a vertical scanning signal and a horizontal scanning signal. It relates to an element. Background art
- An X-Y address type solid-state imaging device has a light receiving section in which a plurality of photoelectric conversion elements are arranged in M rows and N columns (M and N are natural numbers), and faces one side of the light receiving section.
- a vertical shift register for designating a row in which the photoelectric conversion elements from which electric charges are to be read is formed, and a column in which the photoelectric conversion elements from which electric charges are to be read is located facing the side adjacent to the side where the vertical shift resist faces.
- the designated horizontal shift register is formed. Therefore, when a plurality of the solid-state imaging devices are arranged to increase the light receiving area, up to four 2 ⁇ 2 elements can be arranged without generating a dead zone (ie, a vertical shift register and a horizontal shift register).
- the vertical shift register and the horizontal shift register work as a dead zone when they are arranged more than that.
- Such a solid-state imaging device is a solid-state imaging device disclosed in Japanese Patent Application Laid-Open No. 9-32649.
- the vertical shift register and the horizontal shift register are formed on a surface different from the surface on which the light receiving portion is formed (specifically, a surface perpendicular to the surface on which the light receiving portion is formed).
- a plurality of solid-state imaging devices are arranged, it is possible to prevent the occurrence of a dead zone caused by the vertical shift register and the horizontal shift register. Disclosure of the invention
- solid-state imaging device By using the above-mentioned solid-state imaging device, it is possible to arrange a plurality of solid-state imaging devices without generating a dead zone.
- a vertical shift register and a horizontal shift register are used, and a light receiving unit is used. Since it is formed on a surface different from the formed surface, it is difficult to manufacture and arrange each solid-state imaging device.
- an object of the present invention is to provide a solid-state imaging device capable of easily arranging a plurality of solid-state imaging devices without generating a dead zone and increasing a light receiving area.
- a solid-state imaging device includes a light receiving unit having a plurality of photoelectric conversion elements arranged in M rows and N columns on a substrate, and a first wiring provided for each column.
- a first switch group including a plurality of switches for connecting each photoelectric conversion element and the first wiring for each column, and a vertical scanning signal for opening and closing each switch constituting the first switch group for each row.
- a second wiring for connecting the control end of each switch constituting the first switch group to the vertical shift register for each row, and a first wiring for each row and a signal output line.
- a second switch group comprising a plurality of switches; and a horizontal shift register for outputting a horizontal scanning signal for opening and closing each switch constituting the second switch group for each column.
- the second wiring has a compensating section for making the capacitance of the second wiring substantially equal for each row. It is characterized by being provided.
- the vertical shift register and the horizontal shift register are provided on two opposite sides of the light receiving section, the direction of the other two sides where the vertical shift register and the horizontal shift register are not provided is accordingly.
- both the vertical shift register and the horizontal shift register are provided on a predetermined side of the light receiving section, the side adjacent to the side where the vertical shift register and the horizontal shift register are provided is thereby arranged.
- any number of solid-state imaging devices can be arranged without generating a dead zone.
- the solid-state imaging devices can be arranged on the side opposite to the side where the vertical shift register and the horizontal shift register are provided, without generating a dead zone.
- the second wiring is provided with a compensating unit that makes the capacitance of the second wiring for each row substantially equal, so that the capacitance due to the difference in the length of the second wiring for each row is provided. The difference is compensated, and the capacitance of the second wiring for each row can be made substantially equal.
- FIG. 1 is a configuration diagram illustrating a first embodiment of a solid-state imaging device.
- FIG. 2 is a configuration diagram showing a second embodiment of the solid-state imaging device.
- FIG. 3 is a configuration diagram showing a third embodiment of the solid-state imaging device.
- FIG. 4 is a configuration diagram illustrating a fourth embodiment of the solid-state imaging device.
- FIG. 5 is a configuration diagram illustrating an example of a solid-state imaging device array configured using the solid-state imaging device illustrated in FIG.
- FIG. 6 is a configuration diagram illustrating an example of a solid-state imaging device array configured using the solid-state imaging device illustrated in FIG.
- FIG. 7 is a configuration diagram illustrating another example of a solid-state imaging device array configured using the solid-state imaging device illustrated in FIG. BEST MODE FOR CARRYING OUT THE INVENTION
- FIG. 1 is a configuration diagram of a solid-state imaging device according to the present embodiment.
- the left and right directions in FIG. 1 are defined as the X-axis direction (positive right), and the vertical direction is defined as the y-axis direction (positive upward).
- the solid-state imaging device 10 according to the present embodiment includes a light receiving unit 14, a vertical shift register 16, a horizontal shift register 18, and a charge amplifier (amplifying unit) formed on a substrate 12. 20. The details will be described below.
- the light receiving unit 14 is configured by arranging a plurality of photodiodes (photoelectric conversion elements) 22 that accumulate the amount of electric charge according to the amount of incident light on the substrate 12. More specifically, the light receiving section 14 is constituted by M ⁇ N photodiodes 22 arranged in M rows in the y-axis direction and N columns (M and N are natural numbers) in the X-axis direction.
- a gate switch (first switch group) having one end connected to the photodiode 22 and the other end connected to a signal readout line to be described later is connected to the photodiode 22 constituting the light receiving unit 14.
- the switch which constitutes the above) 24 is provided. Therefore, when the gate switch 24 is open, electric charge is accumulated as light enters the photodiode 22, and when the gate switch 24 is closed, the electric charge accumulated in the photodiode 22 is described later. Is read out to the signal readout line.
- the vertical shift register 16 is formed on the substrate 12 and on the upper side of the light receiving section 14 in the y-axis direction.
- the vertical shift register 16 outputs a vertical scanning signal for opening and closing the gate switch 24.
- the control end of each gate switch 24 and the vertical shift register 16 are connected by a gate line (second wiring) 26, and each gate is connected by a vertical scanning signal output from the vertical shift register 16.
- Switch 24 can be opened and closed.
- the gate line 26 is composed of N lines extending in the y-axis direction from the vertical shift register 16 by sewing between rows of the photodiodes 22 arranged in the light receiving section 14.
- Each horizontal line 26 b is connected to the control terminal of each gate switch 24 existing in the same row. Therefore, the vertical shift register 16 and the control terminal of the gate switch 24 are connected for each row.
- the vertical line 26 a of the gate line 26 is set so that the capacitance of each gate line 26 connected to each row is substantially equal, and more specifically, each of the gate lines 26
- a compensation line (compensation wiring) 26c is provided for each vertical line 26a of each gate line 26 so that the lengths of the vertical lines 26a are equal. That is, the lengths of the horizontal lines 26b are equal to each other, and the lengths of the vertical lines 26a including the compensation lines 26c are also equal to each other.
- each signal readout line 28 is provided for each signal readout line 28, and a charge amplifier 20 (amplifying unit) for amplifying the amount of electric charge read out to the signal readout line 28;
- a read switch (a switch constituting a second switch group) 32 is provided for each signal read line 28 and outputs a charge read from the photodiode 22 to the signal output line 30 via a switch 32.
- each charge amplifier 20 is formed on the lower side of the light receiving section 14 in the y-axis direction.
- the horizontal shift register 18 is formed on the substrate 12 and on the lower side of the light receiving section 14 in the y-axis direction.
- the vertical shift register 16 and the horizontal shift register 18 are respectively provided on two opposing sides of the light receiving section 14. Since both the charge amplifiers 20 and the horizontal shift register 18 are formed on the lower side of the light receiving section 14 in the y-axis direction, each charge amplifier 20 is connected to the light receiving section 14. This means that the side is formed on the side where the horizontal shift register 18 is provided.
- the horizontal shift register 18 outputs a horizontal scanning signal for opening and closing the readout switch 32.
- the solid-state imaging device 10 has a vertical shift register 16 and a horizontal shift register 18 formed on the substrate 12 on which the light receiving section 14 is formed, thereby achieving a vertical shift register.
- the solid-state imaging device itself can be easily formed as compared with the case where the horizontal shift register is formed on a surface different from the surface on which the light receiving portion is formed.
- the vertical shift register 16, the horizontal shift register 18, and the light receiving section 14 are formed on the same substrate 12, special attention should be paid when arranging a plurality of the solid-state imaging devices 10. This is unnecessary, and a plurality can be easily arranged.
- the solid-state imaging device 10 is configured such that the vertical shift register 16 and the horizontal shift register 18 are connected to two opposing sides of the light receiving unit 14 (two opposing sides in the y-axis direction). No other elements are formed on the other two sides of the light receiving section 14. Therefore, in the direction of the other two sides (X-axis direction), any number of solid-state imaging devices 10 can be arranged without generating a dead zone.
- the solid-state imaging device 10 is configured such that each vertical line of the gate line 26 is connected to the gate line 26 so that the capacitance of each gate line 26 connected to each row is substantially equal.
- a compensation line 26c is provided to make the length of 26a approximately equal. Therefore, the capacitance of each gate line 26 connected to each row is made almost equal.
- the resistance of each gate line 26 connected for each row can be made substantially equal.
- the solid-state imaging device 10 includes the charge amplifier 20 so that the charge amount read out to the signal readout line 28 can be effectively amplified, and the light receiving unit 1 By providing the charge amplifier 20 on the side of the four sides where the horizontal shift register 18 is provided, regardless of the presence of the charge amplifier, the solid-state imaging device 10 can be moved along the X-axis without causing a dead zone. Any number can be arranged in the direction.
- the solid-state imaging device 10 according to the present embodiment is easy to manufacture and arrange because the vertical shift register 16, the horizontal shift register 18, and the light receiving section 14 are formed on the same substrate 12. Become. As a result, the light receiving area can be easily enlarged.
- the solid-state imaging device 10 has the vertical shift register 16 and the horizontal shift register 18 provided on two opposing sides of the light receiving unit 14 so that a dead zone is not generated. Any number of solid-state imaging devices 10 can be arranged in a specific negative direction (X-axis direction). As a result, it is possible to enlarge the light receiving area without generating a dead zone.
- the capacitance of each gate line 26 connected for each row can be made substantially equal, and The resistance of each gate line 26 connected to the gate line can be made substantially equal.
- the length of each gate line connected to the photodiode 22 constituting the light receiving section 14 is different for each row, the capacitance and resistance will be different for each gate line.
- Such a difference in capacitance and resistance of each gate line affects the transfer characteristics of the vertical scanning signal, causing the output signal from each photodiode 22 to become uneven, and as a result, Develop into unevenness.
- the solid-state imaging device 10 has the gate lines 2 connected for each row as described above. Since the capacitance and the resistance of No. 6 can be made substantially equal, the occurrence of image unevenness can be prevented.
- the vertical lines 26 a of the gate lines 26 uniform, the vertical lines 26 a are formed between the columns of the photodiodes 22 arranged in the light receiving section 14. The coexistence of a portion that has not been formed and a portion that has not been formed is prevented.
- the opening areas of the photodiodes 22 can be made uniform, and the occurrence of image unevenness due to the difference in the opening area can also be prevented.
- FIG. 2 is a configuration diagram of the solid-state imaging device according to the present embodiment.
- the configuration of the solid-state imaging device 40 according to the present embodiment is different from that of the solid-state imaging device 10 according to the first embodiment as follows. That is, in the solid-state imaging device 10 according to the first embodiment, the vertical lines 26 a of the gate lines 26 are set so that the capacitances of the gate lines 26 connected to each row are substantially equal. Although the compensation line 26 c for making the lengths equal is provided, the solid-state imaging device 40 according to the present embodiment is configured such that the capacitances of the gate lines 26 connected to each row are substantially equal. This is the point where the capacity line 42 is connected to each vertical line 26-a of each gate line 26. Here, as the length of the vertical line 26a of each gate line 26 becomes shorter, the capacity of the capacity 42 connected to the vertical line 26a becomes larger.
- each vertical line 26 a between the columns of the photodiodes 22 arranged in the light receiving section 14, and where the vertical line 26 a is not provided the vertical line 2
- Light-shielding lines 44 having substantially the same width as 6a and made of polysilicon or aluminum are formed.
- the photodiodes 22 arranged in the light receiving section 14 are formed.
- the opening areas of the photodiodes 22 can be made uniform, and the image resulting from the difference in the opening area can be obtained. The occurrence of unevenness can also be prevented. W
- the light receiving area can be easily enlarged without generating a dead zone.
- a compensation line 26 c is provided by using the capacity 42 to make the capacitance of each gate line 26 connected for each row substantially equal.
- the capacitance of each gate line 26 connected to each row can be easily made substantially equal.
- the resistance of each gate line 26 cannot be strictly equalized compared with the case where the compensation line 26 c is provided, but the difference in capacitance of each gate line is mainly due to the vertical scanning signal. Considering that it affects the transmission characteristics of the image and develops into image unevenness, the use of the capacity 42 makes it possible to easily and effectively reduce the occurrence of image unevenness.
- FIG. 3 is a configuration diagram of the solid-state imaging device according to the present embodiment.
- the configuration of the solid-state imaging device 50 according to the present embodiment is different from that of the solid-state imaging device 10 according to the first embodiment as follows. That is, in the solid-state imaging device 10 according to the first embodiment, the vertical lines 26 a of the gate lines 26 are set so that the capacitances of the gate lines 26 connected to each row are substantially equal. Although the compensation line 26 c for equalizing the length is provided, the solid-state imaging device 50 according to the present embodiment is configured such that the capacitance of each gate line 26 connected for each row is substantially equal.
- a conductive pad 52 is provided for each vertical line 26 a of each gate line 26.
- the area of the conductive pad 52 provided on the vertical line 26a becomes larger.
- the conductive pad 52 exhibits a capacity function in combination with the substrate 12 and other conductive portions, and its capacity increases as the area increases.
- the vertical lines 26 a between lines of the photodiodes 22 arranged in the light receiving unit 14 are extended on the extension lines.
- a light-shielding line 44 is formed in a portion where the vertical line 26a is not provided, thereby preventing image unevenness due to a difference in opening area.
- the resistance of each gate line 26 cannot be strictly equalized.
- the use of the conductive pad 52 allows simple and effective image unevenness. ⁇ can be reduced ⁇
- FIG. 4 is a configuration diagram of the solid-state imaging device according to the present embodiment.
- the configuration of the solid-state imaging device 60 according to the present embodiment is different from that of the solid-state imaging device 10 according to the first embodiment as follows. That is, in the solid-state imaging device 10 according to the first embodiment, the vertical shift register 16 and the horizontal shift register 18 are provided on two opposite sides of the light receiving unit 14 respectively. In the solid-state imaging device 60 according to the present embodiment, both the vertical shift register 16 and the horizontal shift register 18 are placed on one predetermined side (the lower side in the y-axis direction) of the light receiving unit 14. Provided.
- the solid-state imaging device 60 according to the present embodiment is used, similarly to the solid-state imaging device 10 according to the first embodiment, the light receiving area can be easily enlarged without generating a dead zone.
- the side (the upper side in the y-axis direction) opposite to the side on which the vertical shift register 16 and the horizontal shift register 18 are provided is further provided.
- the solid-state imaging devices 60 can be arranged without producing a dead zone, and the light receiving area can be further increased.
- the solid-state imaging device 60 according to the present embodiment includes a vertical shift register 16 and water. By providing both the flat shift register 18 and one side of the light receiving section 14 so that the vertical shift register 16 and the horizontal shift register 18 can be formed as one CMOS device, the vertical shift register 18 can be formed. O Easier formation of 16 and horizontal shift register 18
- solid-state imaging device it is possible to form a solid-state imaging device array that does not generate a dead zone by arranging the solid-state imaging device on a predetermined side as described above. .
- the vertical shift register 16 and the horizontal shift register 18 have two sides (y (The upper and lower sides in the axial direction). Therefore, by arranging adjacent solid-state imaging devices so that one of the two sides in the X-axis direction is in contact with each other, it is possible to configure a solid-state imaging device array that does not generate a dead zone therebetween. it can.
- both the vertical shift register 16 and the horizontal shift register 18 are provided on one side (lower side in the y-axis direction) of the light receiving section 14. .
- FIG. 5 is a configuration diagram showing an example of a solid-state imaging device array formed using the solid-state imaging device 10 shown in FIG.
- the solid-state imaging device array 100 includes a vertical shift register section 15 including a vertical shift register section 16 and a horizontal shift register section 17 including a horizontal shift register section 18 on two opposite sides of the light receiving section 14. There has been used five solid-state imaging device 1 0 i to 1 0 5 being formed.
- these solid-state imaging device 1 0 i to 1 0 5 the upper side in the figure the vertical Shift register evening unit 1 5, a horizontal shift Torejisu evening section 1 7 and the lower side, vertical sides on their sides Are sequentially arranged from left to right as sides where the adjacent solid-state imaging devices are in contact with each other to form an array. This allows each solid-state image to be arranged in a row.
- Deadband is a solid-state imaging device array 1 0 0 no realized between the image device 1 0 i to 1 0 5. It should be noted that the solid-state imaging devices 40 and 50 shown in FIGS. 2 and 3 can have a solid-state imaging device array having the same configuration.
- FIG. 6 is a configuration diagram illustrating an example of a solid-state imaging device array formed using the solid-state imaging device 60 illustrated in FIG.
- the solid-state imaging device array 600 includes six solid-state imaging devices in which a shift register section 19 including a vertical shift register section 16 and a horizontal shift register section 18 is formed on one side of the light receiving section 14. It is used 6 ( ⁇ 6 0 6.
- one of the solid-state imaging device 6 ( ⁇ 6 0 3, the upper side in the figure a shift Torejisu evening unit 1 9, a side perpendicular to the side as it it adjacent solid-state imaging device that Sessu sides are sequentially disposed from left to right, it is the upper array 6 0 1 formed, whereas, the solid-state image sensor 6 0 4-6 0 6, and the lower side in figure shift Torejisu evening unit 1 9 on its sides
- the vertical side is sequentially arranged from left to right as the side where the adjacent solid-state imaging devices are in contact with each other, thereby forming a lower array 602. Further, an upper array 601 and a lower shift register section 19 are provided.
- a solid-state imaging device array 600 having no dead zone between 0 i and 600 e is realized.
- the solid-state image sensor array with one or two rows shown in Figs. 5 and 6 has no limit on the number of arrays in the horizontal direction (X-axis direction), and any number of arrays can be arranged without producing a dead zone. It is.
- the solid-state imaging device 60 in which the vertical shift register and the horizontal shift register are formed on the same side, further various arrangement methods are possible.
- a light receiving region having a special shape may be required for use in the medical field and the like, and the solid-state imaging device can be applied to such a shape.
- FIG. 7 shows a solid-state imaging device array formed using the solid-state imaging device 60 shown in FIG.
- FIG. 9 is a configuration diagram illustrating another example of the configuration.
- the solid-state imaging device array 7 0 0 employs nine solid-state imaging device 6 ( ⁇ 6 0 9.
- the array 6 0 1 in the solid-state imaging device ⁇ les I 6 0 0 shown in FIG. 6, 6 0 2 in the same manner as in the solid-state imaging device 6 0 I ⁇ 6 0 3 from the first array 7 0 1, from the solid-state imaging device 6 0 4-6 0 6 of the second array 7 0 2, the solid-state imaging device 6 0 7..6 0 9 from the third array 7 0 3 it it forms o
- first array 7 0 1 Shift register evening portion 1 9 and the upper side in the figure were or, the second array 7 0 2 of the Shift register evening portion 1 9 as the lower side, the solid-state imaging device 6 0 2 , arranged in contact with the upper side of the lower side facing the 6 0 3 Shift register evening portion 1 9 is opposed to it that the solid-state imaging device 6 0 4, 6 0 5 Shift register evening portion 1 9.
- the solid-state imaging device 6 0! ⁇ 6 0 9 realizes the solid-state imaging device array 7 0 0 no.
- the present invention can be used as a solid-state imaging device capable of obtaining a large light receiving area without generating a dead zone, which is a region where imaging is not performed.
- a dead zone which is a region where imaging is not performed.
- the second wiring by providing the second wiring with a compensating unit that makes the capacitance of the second wiring for each row substantially equal, the difference in length of the second wiring for each row is caused. Do Differences in capacitance are compensated. As a result, the occurrence of image unevenness due to the difference in the capacity is reduced.
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- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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DE69923159T DE69923159T2 (de) | 1998-10-30 | 1999-07-16 | Festkörperbildmatrix |
AU46535/99A AU4653599A (en) | 1998-10-30 | 1999-07-16 | Solid-state imaging device and solid-state imaging array |
EP99929880A EP1049171B1 (en) | 1998-10-30 | 1999-07-16 | Solid-state imaging array |
JP2000580248A JP4812940B2 (ja) | 1998-10-30 | 1999-07-16 | 固体撮像装置アレイ |
US09/625,953 US6384396B1 (en) | 1998-10-30 | 2000-07-26 | Solid-state image sensing device and solid-state image sensing device array |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP31070498 | 1998-10-30 | ||
JP10/310704 | 1998-10-30 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US09/625,953 Continuation-In-Part US6384396B1 (en) | 1998-10-30 | 2000-07-26 | Solid-state image sensing device and solid-state image sensing device array |
Publications (1)
Publication Number | Publication Date |
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WO2000026966A1 true WO2000026966A1 (fr) | 2000-05-11 |
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ID=18008475
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP1999/003856 WO2000026966A1 (fr) | 1998-10-30 | 1999-07-16 | Dispositif et mosaique d'imagerie a semi-conducteurs |
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Country | Link |
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US (1) | US6384396B1 (ja) |
EP (1) | EP1049171B1 (ja) |
JP (1) | JP4812940B2 (ja) |
AU (1) | AU4653599A (ja) |
DE (1) | DE69923159T2 (ja) |
WO (1) | WO2000026966A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005071949A1 (ja) * | 2004-01-26 | 2005-08-04 | Hamamatsu Photonics K.K. | 固体撮像装置 |
US7276683B2 (en) | 2002-11-28 | 2007-10-02 | Hamamatsu Photonics K.K. | Solid-state imaging device and radiation imaging system |
JP2012019360A (ja) * | 2010-07-07 | 2012-01-26 | Canon Inc | 固体撮像装置及び撮像システム |
US8836833B2 (en) | 2010-07-07 | 2014-09-16 | Canon Kabushiki Kaisha | Solid-state imaging apparatus having pixels with plural semiconductor regions |
US9007501B2 (en) | 2010-07-07 | 2015-04-14 | Canon Kabushiki Kaisha | Solid-state imaging apparatus and imaging system |
US12029691B2 (en) | 2019-07-09 | 2024-07-09 | Makoto Shizukuishi | Medical vehicles, CT devices, and driving method |
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TW200301352A (en) * | 2001-12-05 | 2003-07-01 | Hamamatsu Photonics Kk | Light detection device, imaging device and device for depth capture |
JP3965049B2 (ja) * | 2001-12-21 | 2007-08-22 | 浜松ホトニクス株式会社 | 撮像装置 |
JP3992504B2 (ja) | 2002-02-04 | 2007-10-17 | 富士通株式会社 | Cmosイメージセンサ |
EP1367171A1 (de) * | 2002-05-31 | 2003-12-03 | Hubert A. Hergeth | Sensorleiste mit Sensoren |
JP4391079B2 (ja) * | 2002-11-28 | 2009-12-24 | 浜松ホトニクス株式会社 | 固体撮像装置及び放射線撮像装置 |
JP2004264332A (ja) * | 2003-01-24 | 2004-09-24 | Hamamatsu Photonics Kk | 多重画像形成位置ずれ検出装置、画像濃度検出装置及び多重画像形成装置 |
US9357972B2 (en) | 2012-07-17 | 2016-06-07 | Cyber Medical Imaging, Inc. | Intraoral radiographic sensors with cables having increased user comfort and methods of using the same |
GB2504111A (en) * | 2012-07-18 | 2014-01-22 | Stfc Science & Technology | Image sensor device with external addressing and readout circuitry located along same edge of the sensor device |
JP2014027479A (ja) * | 2012-07-26 | 2014-02-06 | Seiko Instruments Inc | 光電変換装置 |
JP6195778B2 (ja) * | 2013-10-24 | 2017-09-13 | 三菱電機株式会社 | タッチスクリーン、タッチパネルおよびそれを備える表示装置 |
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- 1999-07-16 AU AU46535/99A patent/AU4653599A/en not_active Abandoned
- 1999-07-16 JP JP2000580248A patent/JP4812940B2/ja not_active Expired - Lifetime
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7276683B2 (en) | 2002-11-28 | 2007-10-02 | Hamamatsu Photonics K.K. | Solid-state imaging device and radiation imaging system |
WO2005071949A1 (ja) * | 2004-01-26 | 2005-08-04 | Hamamatsu Photonics K.K. | 固体撮像装置 |
US7973844B2 (en) | 2004-01-26 | 2011-07-05 | Hamamatsu Photonics K.K. | Solid state image pickup device |
JP2012019360A (ja) * | 2010-07-07 | 2012-01-26 | Canon Inc | 固体撮像装置及び撮像システム |
US8836833B2 (en) | 2010-07-07 | 2014-09-16 | Canon Kabushiki Kaisha | Solid-state imaging apparatus having pixels with plural semiconductor regions |
US9007501B2 (en) | 2010-07-07 | 2015-04-14 | Canon Kabushiki Kaisha | Solid-state imaging apparatus and imaging system |
US9113103B2 (en) | 2010-07-07 | 2015-08-18 | Canon Kabushiki Kaisha | Solid-state imaging apparatus and imaging system |
US12029691B2 (en) | 2019-07-09 | 2024-07-09 | Makoto Shizukuishi | Medical vehicles, CT devices, and driving method |
Also Published As
Publication number | Publication date |
---|---|
DE69923159T2 (de) | 2005-12-22 |
EP1049171A1 (en) | 2000-11-02 |
EP1049171A4 (en) | 2000-11-29 |
EP1049171B1 (en) | 2005-01-12 |
JP4812940B2 (ja) | 2011-11-09 |
US6384396B1 (en) | 2002-05-07 |
DE69923159D1 (de) | 2005-02-17 |
AU4653599A (en) | 2000-05-22 |
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