WO1999059761A1 - Procede d'usinage laser - Google Patents

Procede d'usinage laser Download PDF

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Publication number
WO1999059761A1
WO1999059761A1 PCT/JP1998/002239 JP9802239W WO9959761A1 WO 1999059761 A1 WO1999059761 A1 WO 1999059761A1 JP 9802239 W JP9802239 W JP 9802239W WO 9959761 A1 WO9959761 A1 WO 9959761A1
Authority
WO
WIPO (PCT)
Prior art keywords
hole
workpiece
processing
substrate
laser beam
Prior art date
Application number
PCT/JP1998/002239
Other languages
English (en)
Japanese (ja)
Inventor
Takayuki Yuyama
Masaru Kanaoka
Original Assignee
Mitsubishi Denki Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Denki Kabushiki Kaisha filed Critical Mitsubishi Denki Kabushiki Kaisha
Priority to PCT/JP1998/002239 priority Critical patent/WO1999059761A1/fr
Publication of WO1999059761A1 publication Critical patent/WO1999059761A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/115—Via connections; Lands around holes or via connections
    • H05K1/116—Lands, clearance holes or other lay-out details concerning the surrounding of a via
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • H05K2201/098—Special shape of the cross-section of conductors, e.g. very thick plated conductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
    • H05K3/0035—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material of blind holes, i.e. having a metal layer at the bottom
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/425—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern
    • H05K3/427—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern initial plating of through-holes in metal-clad substrates

Definitions

  • the present invention relates to a laser processing method for processing a material such as a solid type print substrate, a flexible substrate, and a green sheet. And a laser processing method for forming through holes (hereinafter sometimes referred to as TH).
  • a laser processing method for processing a material such as a solid type print substrate, a flexible substrate, and a green sheet.
  • TH through holes
  • FIG. 1a is a diagram showing the conventional processing method for processing a via hole VH on a copper-clad substrate CS consisting of an insulating layer 3 with pot foils 2 formed on both sides, and Figure 1b shows a through-hole on a similar copper-clad substrate CS.
  • FIG. 4 is a view showing a conventional processing method for processing a hole TH.
  • These conventional laser processing methods are described in, for example, JP-A-4-136676, JP-A-5-184478 or JP-A-5-37756.
  • a hole 4 was formed by etching, and a laser beam 1 having a larger diameter than the hole 4 was irradiated. The feature of this method was that the etching was performed with a large beam diameter. According to this method, the diameter of the blind via hole or the through hole is determined by the etching hole 4.
  • FIG. 2a is a diagram showing a conventional processing method for processing a via hole VH on an insulating substrate IS consisting of an insulating layer 3 having a copper foil 2 only on the back surface
  • FIG. 6 is a diagram showing a conventional processing method for processing a through hole TH in such an insulating substrate IS.
  • These methods are performed due to the recent development of the build-up method of the substrate lamination by the build-up method.In this case, a blind via hole or a through-hole processing is performed on the insulating substrate IS, and thereafter, the entire surface is patterned. It is a method of forming. In this method, the hole diameter is determined by the diameter of the laser beam 1.
  • the laser processing method according to the present invention is a laser processing method for performing a drilling process using a laser beam on a substrate including an insulating layer and a copper layer provided on the insulating layer, wherein a hole is formed on the substrate.
  • the copper layer in the desired position is selectively removed by etching, and an etching hole having a diameter larger than the hole to be formed in the insulating layer is formed in the copper layer to expose the insulating layer.
  • This is a laser processing method that irradiates a laser beam with a diameter corresponding to the hole to be opened in the exposed insulating layer to make a hole in the insulating layer.
  • the present invention also provides a method for piercing a workpiece by irradiating the workpiece with a laser beam, wherein the laser beam is radiated from both sides of the workpiece to a boring position of the workpiece.
  • the laser processing method is also characterized by this.
  • the present invention also provides a processing method for irradiating a workpiece with a laser beam to remove a material of the workpiece, comprising irradiating the workpiece with a laser beam at a position corresponding to a removal processing position on both surfaces of the workpiece.
  • the laser processing method is characterized in that foreign matter generated by the removal processing is removed from the workpiece.
  • the laser beam may be simultaneously or at a time difference provided at positions corresponding to the removal processing positions on both surfaces of the workpiece. This is also a laser processing method characterized by irradiation.
  • the present invention provides a processing method for irradiating a workpiece with a laser beam to remove a material of the workpiece, wherein the workpiece can be peeled off in a post-process at a position corresponding to the removal processing position of the workpiece.
  • This laser processing method is characterized in that a thin film layer or a plate material is brought into close contact, a laser beam is applied to a position to be removed, and the thin film layer is removed.
  • FIG. 1a is a diagram showing a conventional processing method for processing a via hole in a copper-clad substrate.
  • FIG. 1b is a diagram showing a conventional processing method for processing through holes in a copper-clad substrate.
  • FIG. 2A is a diagram showing a conventional processing method for processing a via hole in an insulating substrate.
  • Figure 2b shows a conventional processing method for processing through holes in an insulating substrate. It is.
  • Fig. 3a is a schematic diagram of the shape of the processed wall surface when the beam position is shifted from the etched hole when forming a via hole in a copper-clad substrate using a conventional processing method.
  • Fig. 3b is a schematic diagram of the shape of the processed wall when the beam position is shifted from the etched hole when a through hole is formed in a copper-clad substrate using the conventional processing method.
  • FIG. 4 is a schematic diagram of a shape of a processing wall surface when a processing hole wall surface expands when a via hole is formed in a copper-clad substrate using a conventional processing method.
  • FIG. 5a is a schematic view showing a via hole formed by the processing method of the present invention.
  • FIG. 5b is a schematic view showing a through hole formed by the processing method of the present invention.
  • FIG. 6 is a diagram showing a method for evaluating the shape of the wall surface of a machined hole.
  • Figure a is a graph showing the measurement results of the hole shape processed by the conventional processing method.
  • Fig. B is a graph showing the measurement results of the hole shape processed by the processing method of the present invention.
  • Fig. 8 is a conceptual diagram showing a method of forming and processing a protective film on the back surface of a substrate
  • Fig. 9 is a conceptual diagram of a method of irradiating a laser on the front and back surfaces of a substrate to prevent the removal material from adhering to the back surface during surface processing
  • FIG. 10a is a graph showing a comparison of the difference in the amount of deposits on the back surface of the substrate by the processing method.
  • FIG. 10b is a plan view of the test material used in the comparative test of FIG. 10a.
  • Fig. 11 is a graph showing a comparison of the front and back hole diameters during through-hole processing for single-sided processing and double-sided processing.
  • Fig. 12 is a conceptual diagram of the process of changing the hole diameter on the substrate surface when multiple shots are input.
  • Fig. 13 is a conceptual diagram of the mechanism that affixes the film and suppresses the change of the hole diameter on the substrate surface when multiple shots are put in.
  • Figure 14 is a graph showing a comparison of the variation in the roundness of the surface hole with and without the film.
  • Fig. 15 is a graph showing the relationship between the film thickness and the hole diameter on the substrate surface during micro hole processing.
  • FIG. 5A is a schematic diagram showing a via hole VH formed by the processing method of the present invention
  • FIG. 5B is a schematic diagram showing a through hole TH formed by the processing method of the present invention.
  • the processing method of the present invention requires a somewhat smaller processing hole diameter for the copper-clad substrate CS, which is the insulating layer 3 having the foil 2 on both sides.
  • a large etching hole 4 is formed, and a hole is formed in the insulating layer 3 through the etching hole 4 with a laser beam 1 having a smaller diameter than the etching hole 4.
  • the hole 5 is machined. According to this method, it is possible to obtain the same peel strength of the pattern as that of the stretched substrate CS while maintaining the workability similar to that of the laser processing for the insulating substrate IS.
  • Fig. 6 shows the case where the insulating layer 3 was processed by irradiating a larger diameter beam to the etched hole 4 of the copper-clad substrate CS by the conventional method, and the case where the hole diameter was smaller than the etching hole 4.
  • An evaluation method for comparison with the case where the processing is performed on the insulating layer 3 is described.
  • the quality comparison of the hole wall shape was made by measuring the difference between the hole diameter at the surface and the hole diameter at the center of the machined hole in the depth direction. went.
  • Fig. 7a is a graph showing the results of measurement of the hole shape processed by the conventional processing method by the method shown in Fig. 6, and Fig. 7b is a graph of the hole shape processed by the processing method of the present invention.
  • 5 is a graph showing measurement results obtained by the method of FIG.
  • the vertical axis is the difference L (mm) between the hole diameter at the surface and the hole diameter at the center of the drilled hole, and the horizontal axis is the number of shots (times). Changes in energy density (m J Zmm 2 ) are shown.
  • the work material is copper-clad on the insulating layer t 0.1 mm of epoxy resin.
  • the irradiation beam diameter was 0.3 mm for the etching hole diameter of 0.1 mm
  • the etching hole diameter was 0.3 mm for the etching hole diameter of 0.3 mm. Processing is performed with an irradiation beam diameter of 0.1 mm.
  • the measured value L in the figure tends to increase.
  • the value of L may be a positive value (the wall surface is bulging outward).
  • the value of L is 0 at the maximum.
  • the wall surface does not bulge outward.
  • gaps may be created between the backside of the board and the processing tape in some cases.Because of such gaps and through holes, laser processing of the board surface, etc. In some cases, the removed substances such as carbides that have been generated may be transferred to the back surface of the substrate and adhere firmly, thereby hindering the plating. As shown in Fig.
  • step of taping 8 According to the method of this, it is necessary to peel off the tape 8 before performing the next step, according to c present invention the number of steps is more efficient had summer poor
  • First as shown in the left half of FIG. 9, first, the surface of the substrate IS is irradiated with the laser beam 1 for processing. At this time, as shown in the figure, the foreign matter 7 which is a removal substance goes around and adheres to the copper foil 2 on the back surface through the through hole TH.
  • the substrate IS on which the foreign matter 7 has adhered is turned upside down, and the laser beam 1 is again irradiated to remove the adhered matter.
  • a substrate processed by the double-sided irradiation method of the present invention shown in FIG. 9 and a substrate processed by the method using the protective film 8 shown in FIG. From the substrate that had been subjected to normal processing without the protective film 8, the amount of adhered foreign matter 7 after each processing was examined. The results are shown in Figure 1Oa, and the test materials used were shown in Figure 1Oa. Shown in b. As shown in Fig. 10b, 1 Ommxl 0 mm was applied to a substrate 3 (polyimide resin, thickness 50 jum) with 2 Omm x 5 mm copper foil 2 on one side, as shown in Fig. 10b. The processing was performed from the resin side to the area indicated by the square 9.
  • the substrate IS was fixed at a position of 1 Omm above the processing table without adhering to the processing table (not shown) in order to make it easier for the foreign material 7 of the resin material to wrap around.
  • the amount of the deposit 7 is defined as the area of the deposit 7 per unit area.
  • the surface hole diameter and the back surface hole diameter of the through hole can be made substantially equal.
  • Fig. 11 is a graph showing the results of comparison of the surface hole diameter and the back surface hole diameter of through-hole processing when processing is performed from only one side and when processing is performed from both sides by reversing the substrate after processing on one side.
  • Work material is FR-4 plate (thickness t 2
  • the processing conditions were 4 mJ per pulse and 40 Hz frequency in each case.
  • the number of shots is 10 shots from one side and 5 shots from each side from both sides.
  • the back hole diameter is about 60 m, and the back hole diameter is about 50% of the front hole diameter.
  • the surface hole diameter is about 100 jum and the backside hole diameter is also about 100 A ⁇ m, and the backside hole diameter is almost the same as the surface hole diameter (Approximately 100%).
  • the substrate IS is inverted in order to irradiate the laser beam 1 to both surfaces of the substrate IS.
  • the re-laser beam 1 can be illuminated simultaneously or with a time difference from the surface side. According to this method, the time can be significantly reduced as compared with the case where the substrate Is is inverted. For example, when processing 100,000 holes in the through hole TH processing described in the third embodiment, if a galvano scanner is used, the positioning of the holes can be performed in 2.O ms.
  • the hole shape on the surface may be distorted depending on the conditions.
  • a hole is drilled in a printed circuit board with a laser
  • a plurality of shots are usually taken.
  • a galvano scanner is often used to shorten the processing time.
  • Such an apparatus is susceptible to vibrations due to high-speed operation.
  • drilling holes in a substrate by laser beam irradiation as shown in FIG.
  • the first shot shown in the left half of the figure and the second shot shown in the right half caused beam misalignment, and the shape of the machined hole on the surface was distorted (distorted).
  • FIG. 13 shows the processing method of the present invention. That is, a resin film 12 such as a thin-film polyethylene or the like that can absorb laser energy is attached to the surface of the substrate 3 to be processed, and a hole is formed by irradiating a laser beam 1 thereon.
  • a resin film 12 such as a thin-film polyethylene or the like that can absorb laser energy is attached to the surface of the substrate 3 to be processed, and a hole is formed by irradiating a laser beam 1 thereon.
  • FIG. 14 is a graph showing the results of measuring the variation in the roundness of the surface hole diameter when holes were formed on the substrate on which the film 12 was not bonded and the substrate on which the film 12 was bonded.
  • the material to be processed is a hole with a diameter of ⁇ 100 ⁇ m made of epoxy (thickness t 50 m).
  • the processing conditions were 2 shots at 2 mJ of energy per pulse and 1 shot at a frequency of 1 Hz.
  • the roundness was (small diameter long diameter X 100), and the measurement was performed immediately after processing on the substrate without the film, and on the 25 holes each after peeling the film on the substrate with the film. As is clear from FIG. 14, the roundness of the hole of the substrate on which the film 12 is stuck is high and the variation is small.
  • the inner wall surface of the hole becomes a paper shape, and the hole diameter is formed at the tip of the paper. Becomes smaller. Therefore, by combining the reduction of the hole diameter due to this processing phenomenon with the high roundness of the hole of the substrate IS on which the film 12 is attached, it is possible to form a fine hole with high roundness. Become.
  • the graph of FIG. 15 shows the relationship between the thickness of the film 12 and the hole diameter on the surface of the substrate IS.
  • the workpiece is a substrate 12 having an epoxy resin thickness of 30 m.
  • the hole diameter at the surface of Fi Lum 1 2 was set to be ⁇ 8 0 A ⁇ m. Also, The number was changed according to the thickness of the film 12 so that the processing reached the inner layer copper foil. As is clear from this graph, when the film 12 becomes thicker, the hole diameter on the substrate surface tends to become smaller. Possibility of ffi
  • the laser processing method according to the present invention is directed to a laser processing method in which a substrate provided with an insulating layer and a copper layer provided on the insulating layer is drilled by a laser beam.
  • the copper layer is selectively removed by etching, and an etching hole having a diameter larger than the hole to be formed in the insulating layer is formed in the copper layer to expose the insulating layer, which is then exposed from the etching hole.
  • This is a laser processing method that irradiates a laser beam with a diameter corresponding to the hole to be formed in the insulating layer to make a hole in the insulating layer. With this method, it is possible to obtain a pattern peel strength equivalent to that of a copper-clad substrate, while maintaining the workability equivalent to that of laser processing of an insulating substrate.
  • the present invention also provides a method for piercing a workpiece by irradiating the workpiece with a laser beam, wherein the laser beam is radiated from both sides of the workpiece to a boring position of the workpiece.
  • This is also a laser processing method characterized by this. For this reason, the generation of paper at the time of through-hole processing is suppressed, and a hole processing close to a straight hole can be performed.
  • the present invention also provides a processing method for irradiating a workpiece with a laser beam to remove a material of the workpiece, comprising irradiating the workpiece with a laser beam at a position corresponding to a removal processing position on both surfaces of the workpiece.
  • the laser processing method is characterized in that foreign matter generated by the removal processing is removed from the workpiece. With this method, the rate of occurrence of defects in the subsequent steps can be suppressed.
  • a position corresponding to a removal processing position on both surfaces of the workpiece is also characterized in that the laser beams are irradiated simultaneously or with a time lag on the device. As described above, since the workpiece is machined simultaneously or slightly with a time lag from the front and back sides in two directions, high quality and short machining time can be achieved.
  • the present invention provides a processing method for irradiating a workpiece with a laser beam to remove a material of the workpiece, wherein the workpiece can be peeled off in a post-process at a position corresponding to the removal processing position of the workpiece.
  • This laser processing method is characterized in that a thin film layer or a plate material is brought into close contact, a laser beam is applied to a position to be removed, and the thin film layer is removed.
  • the thin film is adhered to the surface of the workpiece to be processed, the variation of the hole shape on the surface to be processed can be suppressed, and fine holes can be formed in the substrate. It is possible.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Laser Beam Processing (AREA)

Abstract

La présente invention concerne un procédé d'usinage dans lequel on applique un faisceau de diamètre plus petit que les trous gravés dans une feuille de cuivre afin d'empêcher le bombement des parois des trous usinés, on utilise un substrat cuivré afin d'assurer une résistance élevée au pelage, on irradie les deux faces du substrat avec un rayon laser afin d'empêcher le dépôt de substances étrangères et, ce faisant, de réduire sensiblement la conicité au cours de la formation des trous de part en part, et on fixe une pellicule ou analogue sur les surfaces du substrat pendant l'usinage afin de limiter les variations dans l'arrondi des trous usinés.
PCT/JP1998/002239 1998-05-21 1998-05-21 Procede d'usinage laser WO1999059761A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP1998/002239 WO1999059761A1 (fr) 1998-05-21 1998-05-21 Procede d'usinage laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1998/002239 WO1999059761A1 (fr) 1998-05-21 1998-05-21 Procede d'usinage laser

Publications (1)

Publication Number Publication Date
WO1999059761A1 true WO1999059761A1 (fr) 1999-11-25

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1998/002239 WO1999059761A1 (fr) 1998-05-21 1998-05-21 Procede d'usinage laser

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WO (1) WO1999059761A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011148492A1 (fr) * 2010-05-27 2011-12-01 三菱電機株式会社 Procédé de traitement par laser et machine de traitement par laser
US8268182B2 (en) 2006-05-20 2012-09-18 Sumitomo Electric Industries, Ltd. Product having through-hole and laser processing method
JP2018129548A (ja) * 2007-11-22 2018-08-16 味の素株式会社 多層プリント配線板の製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0346393A (ja) * 1989-07-14 1991-02-27 Matsushita Electric Ind Co Ltd プリント配線板の製造方法
JPH03190186A (ja) * 1989-12-19 1991-08-20 Brother Ind Ltd 回路基板の製造方法
JPH04250687A (ja) * 1991-01-26 1992-09-07 Nippon Mektron Ltd 可撓性回路基板の製造法
JPH05185269A (ja) * 1992-01-17 1993-07-27 Fujitsu Ltd レーザアブレーション加工方法
JPH06244529A (ja) * 1993-02-19 1994-09-02 Toppan Printing Co Ltd プリント配線基板の製造方法
JPH08116158A (ja) * 1994-10-06 1996-05-07 Stc Internatl Computers Ltd プリント回路板及びその製造方法
JPH09191168A (ja) * 1996-01-10 1997-07-22 Yamamoto Seisakusho:Kk プリント配線基板の導通孔の加工方法
JPH09321432A (ja) * 1996-05-28 1997-12-12 Matsushita Electric Works Ltd 多層プリント配線板の製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0346393A (ja) * 1989-07-14 1991-02-27 Matsushita Electric Ind Co Ltd プリント配線板の製造方法
JPH03190186A (ja) * 1989-12-19 1991-08-20 Brother Ind Ltd 回路基板の製造方法
JPH04250687A (ja) * 1991-01-26 1992-09-07 Nippon Mektron Ltd 可撓性回路基板の製造法
JPH05185269A (ja) * 1992-01-17 1993-07-27 Fujitsu Ltd レーザアブレーション加工方法
JPH06244529A (ja) * 1993-02-19 1994-09-02 Toppan Printing Co Ltd プリント配線基板の製造方法
JPH08116158A (ja) * 1994-10-06 1996-05-07 Stc Internatl Computers Ltd プリント回路板及びその製造方法
JPH09191168A (ja) * 1996-01-10 1997-07-22 Yamamoto Seisakusho:Kk プリント配線基板の導通孔の加工方法
JPH09321432A (ja) * 1996-05-28 1997-12-12 Matsushita Electric Works Ltd 多層プリント配線板の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8268182B2 (en) 2006-05-20 2012-09-18 Sumitomo Electric Industries, Ltd. Product having through-hole and laser processing method
JP2018129548A (ja) * 2007-11-22 2018-08-16 味の素株式会社 多層プリント配線板の製造方法
WO2011148492A1 (fr) * 2010-05-27 2011-12-01 三菱電機株式会社 Procédé de traitement par laser et machine de traitement par laser
CN102917834A (zh) * 2010-05-27 2013-02-06 三菱电机株式会社 激光加工方法及激光加工机
TWI386269B (zh) * 2010-05-27 2013-02-21 Mitsubishi Electric Corp 雷射加工方法及雷射加工機

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