WO1999014858A1 - Ordinateur quantique - Google Patents

Ordinateur quantique Download PDF

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Publication number
WO1999014858A1
WO1999014858A1 PCT/AU1998/000777 AU9800777W WO9914858A1 WO 1999014858 A1 WO1999014858 A1 WO 1999014858A1 AU 9800777 W AU9800777 W AU 9800777W WO 9914858 A1 WO9914858 A1 WO 9914858A1
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WIPO (PCT)
Prior art keywords
donor
quantum computer
electron
gates
spin
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Application number
PCT/AU1998/000777
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English (en)
Inventor
Bruce Kane
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Unisearch Limited
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Publication date
Application filed by Unisearch Limited filed Critical Unisearch Limited
Priority to CA002304185A priority Critical patent/CA2304185A1/fr
Priority to AU91462/98A priority patent/AU733193C/en
Priority to IL13492098A priority patent/IL134920A/xx
Priority to EP98943573A priority patent/EP1016216A4/fr
Priority to US09/486,329 priority patent/US6472681B1/en
Priority to KR1020007002708A priority patent/KR20010030601A/ko
Priority to JP2000512288A priority patent/JP4819994B2/ja
Publication of WO1999014858A1 publication Critical patent/WO1999014858A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7613—Single electron transistors; Coulomb blockade devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/933—Spintronics or quantum computing

Definitions

  • This invention concerns a quantum computer, that is a device for performing quantum computations. Recent progress in the theory of quantum computation, particularly the discovery of fast quantum algorithms, makes the development of such a device an important priority.
  • the invention is a quantum computer, including: A semiconductor substrate into which donor atoms are introduced to produce an array of donor nuclear spin electron systems having large electron wave functions at the nucleus of the donor atoms. Where the donor electrons (electrons weakly bound to the donor atom) only occupy the nondegenerate lowest spin energy level.
  • the nuclear spins of the donor atoms are the quantum states or "qubits" in which binary information is stored and manipulated by selective application of voltage to the A- and /-gates and selective application of alternating magnetic field to the substrate.
  • a cooling means may be required to maintain the substrate cooled to a temperature sufficiently low, and a source of constant magnetic field having sufficient strength to break the two-fold spin degeneracy of the bound state of the electron at the donor may also be required.
  • the combination of cooling and magnetic field may be required to ensure the electrons only occupy the nondegenerate lowest spin energy level.
  • the device may also incorporate a source of alternating magnetic field of sufficient force to flip the nuclear spin of donor atoms resonant with the field, and means may be provided to selectively apply the alternating magnetic field to the substrate.
  • the device may include means to selectively apply voltage to the A-gates and /-gates.
  • the invention takes advantage of the fact that an electron is sensitive to externally applied electric fields.
  • the hyperfine interaction between an electron spin and the spin of the atomic nucleus, and the interaction between an electron and the nuclear spins of two atomic nuclei can be controlled electronically by voltages applied to gates on a semiconductor device in the presence of an alternating magnetic field.
  • the invention uses these effects to externally manipulate the nuclear spin dynamics of donor atoms in a semiconductor for quantum computation. In such a device the lifetime of the quantum states (or qubits) operated on during the computation must exceed the duration of the computation, otherwise the coherent state within the computer upon which quantum algorithms rely will be destroyed.
  • the conditions required for electron-coupled nuclear spin computation and single nuclear spin detection can arise if the nuclear spin is located on a positively charged donor in a semiconductor host.
  • the electron wave function is then concentrated at the donor nucleus (for s-orbitals and energy bands composed primarily of them), yielding a large hyperfine interaction energy.
  • the electron wave function extends tens or hundreds of A away from the donor nucleus, allowing electron-mediated nuclear spin coupling to occur over comparable distances.
  • the only I 1/2 shallow (Group V) donor in Si is 31 P.
  • the A- and /-gates may be formed from metallic strips patterned on the surface of the insulating layer.
  • a step in the insulating layer over which the gates cross may serve to localise the gates electric fields in the vicinity of the donor atoms.
  • the temperature of the quantum computer may be below 100 millikelvin (mK) and will typically be in the region of 50 mK.
  • the process of quantum computation is non-dissipative, and consequently low temperatures can be maintained during computation with comparative ease. Dissipation will arise external to the computer from gate biasing and from eddy currents caused by the alternating magnetic field, and during polarisation and detection of nuclear spins at the beginning and end of the computation. These effects will determine the minimum operable temperature of the computer.
  • the constant magnetic field may be required to be of the order of 2 Tesla. Such powerful magnetic fields may be generated from superconductors.
  • the extreme temperatures and magnetic fields required impose some restrictions on the availability and portability of the quantum computing device outside of a laboratory.
  • the high level of access to a computer situated remotely in a laboratory may overcome any inconvenience arising from its remoteness.
  • the device could be utilised as a network server for personal computers, in which case the server may have a local cooling system and the personal computers may operate at room temperature.
  • Electron devices may be provided to set the initial state and read output from the quantum computer. These devices polarize and measure nuclear spins. For example, the electron device may modulate the movement of a single electron, or a current of electrons, according to the state of a single nuclear spin. These devices will typically be provided at the edge of the array.
  • An electron device for polarizing and measuring nuclear spins may, comprise:
  • the gates are biased so that, if the transition is allowed, one or more electrons can interact with the donor state.
  • the invention is a method of initializing the quantum computer, comprising the following steps: biasing the gates so that, if the nuclear spin of a donor is in a first state no transition is allowed, but if the nuclear spin is in a second state transition is allowed, and one or more electrons can interact with the donor state to change the nuclear spin to the first state; and continuing the process until all the donors are in the first state.
  • the invention is a method of measuring nuclear spins in the quantum computer, comprising the following steps: biasing the gates so that, if the nuclear spin of a donor is in a first state no transition is allowed, but if the nuclear spin is in a second state transition is allowed, and one or more electrons can interact with the donor state to change the nuclear spin to the first state; and detecting the movement of the one or more electrons to determine the state of the respective donors.
  • Figure 1 illustrates two cells in a 1-Dimensional array containing 31 P donors and electrons in a Si host, separated by a barrier from metal gates on the surface.
  • A-gates control the resonance frequency of the nuclear spin qubits, while /-gates control the electron- mediated coupling between adjacent nuclear spins.
  • the ledge over which the gates cross localises the gate electric field in the vicinity of the donors.
  • Figure 2 illustrates how an electric field applied to anA-gate pulls the electron wave function away from the donor atom and toward the barrier, reducing the hyperfine interaction and the resonance frequency of the nucleus.
  • the donor nuclear spin electron system acts as a voltage controlled oscillator.
  • Figure 3 illustrates how an electric field applied to a /-gate varies the electrostatic potential barrier V " between the donors to enhance or reduce the exchange coupling, proportional to the electron wave function overlap.
  • Figure 4 illustrates the effect on electron and nuclear spin energies when / coupling is turned on.
  • the exchange interaction lowers the electron singlet energy with respect to the triplets.
  • the computer is always operated when/ ⁇ ⁇ B B /2 so that the electron state is spin polarised.
  • Figure 5 (a), (b) and (c) illustrates a controlled NOT operation, realised by adiabatic variations in/, ⁇ A , and B AC .
  • Figure 6 illustrates a configuration at the edge of the array for polarising and detecting nuclear spins.
  • Figure 6 (a) is a pictorial view of the arrangement. When positively biased, E-gates pull electrons from ohmic contacts (not shown) into the vicinity of the edge qubit donor.
  • Figure 6 (b) is a section showing the 31 P donor weakly coupled to 2DEG's; if the transition is allowed, an electron can tunnel through the donor state.
  • Figure 6 (c) illustrates the "spin diode" configuration, in which electron spin states at the Fermi level on opposite sides of the donor have opposite polarity. Resonant tunnelling from one side to the other will flip the nuclear spin on the donor, so that the nuclear spin is polarised by an electrical current.
  • Figure 6 (d) illustrates the "single electron spin valve" configuration, in which electrons cannot tunnel onto the donor unless it can transfer its spin to the nucleus, resulting in a spin blockade if the electron and nuclear spins initially point in the same direction. An electron traversing across the donor must flip the nuclear spin twice, however, so the initial nuclear spin polarisation is preserved.
  • a 1-Dimensional array 1 having two cells 2 and 3 comprises a Si substrate 4 into which two donor atoms 5 and 6 of 31 P are introduced 200 A beneath the surface 7. There is one atom of 1 P in each cell and the atoms are separated by less than 200 A.
  • Conducting A-gates 8 are laid down on a Si0 2 insulating layer 9 above the Si substrate 4, each A-gate being directly above a respective P atom.
  • Conducting /-gates 10 are laid down on the insulating layer 9 between each cell 2 and 3.
  • a step 11 over which the gates cross localises the gates electric fields in the vicinity of the donor atoms 5 and 6.
  • the nuclear spins of the donor atoms 5 and 6 are the quantum states or "qubits" in which binary information is stored and manipulated.
  • the A- gates 8 control the resonance frequency of the nuclear spin qubits, while /- gates 10 control the electron-mediated coupling between adjacent nuclear spins.
  • the size of the interactions between spins determines both the time required to do elementary operations on the qubits and the separation necessary between donors in the array.
  • the Hamiltonian for a nuclear spin- electron system in Si, applicable for an 1 1/2 donor nucleus and with ° z
  • A - ⁇ B g n / , 3 ⁇ (0) 32 is the contact hyperfine interaction energy
  • An electric field applied at the A-gate to the electron-donor system shifts the electron wave function envelope away from the nucleus and reduces the hyperfine interaction.
  • the size of this shallow donor Stark shift in Si is shown in Figure 2 for a donor 200 A beneath a gate.
  • Quantum mechanical computation requires, in addition to single spin rotations, the two qubit "controlled rotation" operation, which rotates the spin of a target qubit through a prescribed angle if and only if the control qubit is oriented in a specified direction, and leaves the orientation of the control qubit unchanged.
  • Performing such two spin operations requires coupling between two donor-electron spin systems, which will arise from the electron spin exchange interaction when the donors are sufficiently close to each other.
  • H[B) are the magnetic field interaction terms for the spins.
  • A_ and A 2 are the hyperfine interaction energies of the nucleus-electron systems. 4/ the exchange energy, depends on the overlap of the electron wave functions.
  • Equation 4 originally derived for H atoms, is complicated in Si by its valley degenerate anisotropic band structure. Exchange coupling terms from each valley interfere, leading to oscillatory behaviour of J[r). In this example the complications introduced by Si band structure are neglected.
  • the exchange interaction lowers the electron singlet ( I T4 ⁇ - slT» energy with respect to the triplets.
  • the electron ground state will be polarised if ⁇ B B > see Figure 4a.
  • the energies of the nuclear states can be calculated to second order in A using perturbation theory.
  • the nuclear singlet ( 1 10-01)) is lowered in energy with respect to ( 1 10 + 01» by:
  • Equation 5 was derived When Aj ⁇ A 2 the nuclear spin singlets and triplets are no longer eigenstates, and the eigenstates of the central levels will approach 1 10) and 101) when I A_ - A 2 1 > > hv jt as is characteristic of two level systems; see Figure 5a.
  • Control of the /-gates are sufficient to effect the controlled rotation operation between two adjacent spins.
  • the controlled NOT operation conditional rotation of the target spin by 180°
  • the controlled NOT operation can be performed using an adiabatic procedure, in which the gate biases are swept slowly; refer to Figures 5b & c.
  • t_ a differential voltage is applied to the A-gates (designated ⁇ A ) that breaks this degeneracy. This symmetry breaking step distinguishes the control qubit from the target qubit.
  • B AC is left on until t 5 when it has transformed 1 11) into 1 10 + 01) and vice versa.
  • the 1 10 - 01) and 1 10 + 01) are then adiabatically transformed back into 1 10) and 101) in a reverse of the sequence of steps performed at the beginning of the operation.
  • the qubit whose resonance energy was increased by the action of ⁇ A at the outset is unchanged, while the state whose energy was decreased is inverted if and only if the other qubit is 1 1).
  • the controlled NOT operation has been performed.
  • Arbitrary controlled rotations can be accomplished by appropriately setting the duration and frequency of B AC . It is likely that computational steps can be performed more efficiently than the adiabatic approach discussed above allows.
  • the EXCHANGE operation in which adjacent qubits are simply swapped with one another, the only way the qubits can be moved around in a quantum computer
  • biasing of A-gates and /-gates enables custom control of the qubits and their mutual interactions.
  • the presence of the gates, however, will lead to decoherence of the spins if the gate biases fluctuate away from their desired values.
  • the largest source of decoherence is likely to rise from voltage fluctuations on the A-gates.
  • f ⁇ can be estimated by determining the transition rate between 1 10+01) (spins in phase) and 1 10-01) (spins 180° out of phase) of a two spin system.
  • the Hamiltonian that couples these states is:
  • S v is the spectral density of the gate bias potential fluctuations.
  • ⁇ is determined by the size of the donor array cells and cannot readily be reduced (to increase r ⁇ ) without reducing the exchange interaction between cells. Because ⁇ is a function of the gate bias (see Figure 2) f ⁇ can be increased by minimising the voltage applied to the A-gates.
  • Equation 7 is valid for white noise, at low frequencies it is likely that materials dependent fluctuations (1// noise) will be the dominant cause of spin dephasing. Consequently, it is difficult to give hard estimates of f ⁇ for the computer.
  • a particular source of low frequency fluctuations, alluded to above, arises from nuclear spins in the semiconductor host. This source of spin dephasing can be eliminated by using only/ 0 isotopes in the semiconductor and barrier layers. Charge fluctuations within the computer (arising from fluctuating occupancies of traps and surface states, for example) are likely to be particularly important, and minimising them will place great demands on computer fabrication.
  • A-gates and /-gates together with B AC perform all of the reversible operations for quantum computation.
  • the qubits must also be properly initialised and measured.
  • qubits at the edge of the array are weakly coupled to two dimensional electron gases (2DEG's) that are confined to the barrier-Si interface by a positive potential on E-gates (a field effect transistor in enhancement mode); see Figure 6a.
  • 2DEG's two dimensional electron gases
  • E-gates a field effect transistor in enhancement mode
  • the nuclear spin qubit is probed by an electron tunnelling through a bound state at the donor; see Figure 6b.
  • B ⁇ O the electron energy levels are discrete and electron spin levels are split by 2 ⁇ B B.
  • the Landau level filling factor v ⁇ 1 the electron spins are completely polarised at low temperature.
  • the parameters of each cell can be determined individually using the measurement capabilities of the computer, because the measurement technique discussed here does not require precise knowledge of the / and A couplings.
  • the spin will have flipped if, and only if, resonance occurred within the prescribed A-gate voltage range. Testing for spin flips in increasingly small voltage ranges leads to the determination of the resonance voltage.
  • the /-gates can be calibrated in a similar manner by sweeping /- gate biases across resonances of two coupled cells.
  • the calibration procedure can be performed in parallel on many cells, and the calibration voltages can be stored on capacitors located on the Si chip adjacent to the quantum computer to initialize it. Calibration is not a fundamental impediment to scaling the computer to large sizes, and external controlling circuitry would thus need to control only the timing of gate biases, and not their magnitudes.
  • Readout of the nuclear spin state can be performed simply by reversing the loading process. Since electrons can only traverse a spin diode junction by exchanging spin with a nucleus (say, by converting 1 1) into 1 0» a "spin blockade” will result if the nuclear spin is 10). If the nuclear state is 1 1), a single electron can cross the junction, simultaneously flipping the nucleus from 1 1) to 1 0).
  • this detection technique requires extremely sensitive single electron sensing circuitry. It would be preferable to have a conductance modulation technique to sense the nuclear spin. If large numbers of electrons can interact with the nuclear spin without depolarising it, many separate effective measurements could be made of the spin.
  • the E-gates are biased so that only 1 1) electrons are present on both sides of the output cell.
  • the A-gate of the output cell is biased so that E F lies at the energy of the two electron bound states at the donor (the D ⁇ state).
  • an electron can tunnel on or off of the D ' state by a mutual electron-nuclear spin flip only if the nuclear and electron spins are oppositely polarised.
  • a current flow across the donor requires two successive spin flips as the electron tunnels in and out of the D ⁇ state, consequently, a current across the donor preserves the nuclear spin polarisation.
  • Current flow across the single electron spin valve is turned on or off depending on the orientation of the nuclear spin on the donor.
  • Dipolar spin interactions generally much weaker that the contact hyperfine interaction
  • Optimised devices will maximise the ratio of the number of electrons that can probe the nucleus to the background.
  • Prototype single electron spin valve devices can be tested using single electron capacitance probes of donor states with nonzero nuclear spin.
  • An excellent indicator of suitable semiconductor materials for use in a quantum computer is the ability to observe the integral and fractional quantum Hall effects in them.
  • Recent advances in Si/Si x Ge l c heterostructures have led to materials composed entirely of group IV elements with quality comparable to GaAs heterostructures. The fractional quantum Hall effect is observed in these materials and spin splitting is well resolved. Nanostructures have also been fabricated on high quality Si/Si x Ge 1-x heterostructures.
  • the most obvious obstacle to building the quantum computer presented above is the incorporation of the donor array into the Si layer beneath the barrier layer.
  • semiconductor heterostructures are deposited layer by layer.
  • the ⁇ -doping technique produces donors lying on a plane in the material, with the donors randomly distributed within the plane.
  • the quantum computer envisioned requires that the donors be placed into an ordered ID or 2D array; furthermore, precisely one donor must be placed into each array cell, making it extremely difficult to create the array by using lithography and ion implantation or by focused deposition.
  • Methods currently under development to place single atoms on surfaces using ultra high vacuum scanning tunnelling microscopy are likely candidates to be used to position the donor array. This approach has been used to place Ga atoms on a Si surface.
  • a challenge will be to grow high quality Si layers on the surface subsequent to placement of the donors. Because the donors in the array must be ⁇ 200 A apart in order for exchange coupling between the electron spins to be significant, the gate dimensions must be ⁇ 100 A. In addition, the gates must be accurately registered to the donors beneath them. Scanned probe lithography techniques have the potential to sense the location of the donors beneath the surface prior to exposing the gate patterns on the surface. For example, a scanning near field optical microscope could be used to detect the photoluminescence characteristic of the P donors in a wavelength range that does not expose photoresist. After P detection and proper positioning of the probe, the resist is exposed with a different light wavelength. "Custom patterning" of the gates may prove to be necessary to compensate for irregularities or defects in the placement of the donor array.

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Abstract

Ordinateur quantique comprenant un substrat à semi-conducteur, dans lequel on introduit des atomes donneurs afin de produire un réseau de systèmes d'électrons à spin nucléaire de donneur ayant des fonctions d'ondes électroniques amples au niveau du noyau des atomes donneurs, ceux-ci n'occupant que le niveau énergétique non dégénéré ayant le spin le plus bas; une couche isolante disposée au-dessus du substrat; des portes conductrices A, disposées sur la couche isolante au-dessus des atomes donneurs correspondants, qui commandent la force des interactions hyperfines entre les électrons cédés et le spin des atomes donneurs, et donc la fréquence de résonance des spins nucléaires des atomes donneurs; et des portes conductrices J, disposées sur la couche isolante entre les portes A, qui permettent de réaliser ou d'interrompre le couplage créé par les électrons entre les spins nucléaires des atomes donneurs adjacents. Les spins nucléaires des atomes donneurs sont les états quantiques, ou 'qubits', dans lesquels les informations binaires sont mises en mémoire et manipulées par l'application sélective d'une tension aux portes A et J et d'un champ magnétique alternatif au substrat.
PCT/AU1998/000777 1997-09-17 1998-09-17 Ordinateur quantique WO1999014858A1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CA002304185A CA2304185A1 (fr) 1997-09-17 1998-09-17 Ordinateur quantique
AU91462/98A AU733193C (en) 1997-09-17 1998-09-17 Quantum computer
IL13492098A IL134920A (en) 1997-09-17 1998-09-17 Quantum computer
EP98943573A EP1016216A4 (fr) 1997-09-17 1998-09-17 Ordinateur quantique
US09/486,329 US6472681B1 (en) 1997-09-17 1998-09-17 Quantum computer
KR1020007002708A KR20010030601A (ko) 1997-09-17 1998-09-17 양자 컴퓨터
JP2000512288A JP4819994B2 (ja) 1997-09-17 1998-09-17 量子コンピュータ

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AUPO9268A AUPO926897A0 (en) 1997-09-17 1997-09-17 Quantum computer
AUPO9268 1997-09-17

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PCT/AU1998/000778 WO1999014614A1 (fr) 1997-09-17 1998-09-17 Dispositifs electroniques permettant de mesurer le spin unique d'un electron et d'un noyau
PCT/AU1998/000777 WO1999014858A1 (fr) 1997-09-17 1998-09-17 Ordinateur quantique

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JP (2) JP4819994B2 (fr)
KR (2) KR20010030600A (fr)
CN (2) CN1135700C (fr)
AU (1) AUPO926897A0 (fr)
CA (2) CA2304045A1 (fr)
IL (2) IL134920A (fr)
IN (1) IN192584B (fr)
TW (2) TW423046B (fr)
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ZA (2) ZA988528B (fr)

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WO2001010027A1 (fr) * 1999-07-30 2001-02-08 Javier Tejada Palacios Ordinateur quantique utilisant des qubits magnetiques
WO2003049197A1 (fr) * 2001-12-06 2003-06-12 Japan Science And Technology Agency Dispositif de calcul du quantum de spins nucleaires dans un solide
WO2016187676A1 (fr) * 2015-05-28 2016-12-01 Newsouth Innovations Pty Limited Appareil de traitement quantique et procédé de fonctionnement d'un appareil de traitement quantique
WO2020005417A1 (fr) * 2018-06-25 2020-01-02 Intel Corporation Programmation adaptative de dispositifs qubits à points quantiques

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JP2000137007A (ja) * 1998-08-26 2000-05-16 Canon Inc 状態構成方法及びその装置、並びにこれを用いた通信方法及びその装置
US6988058B1 (en) * 1998-12-16 2006-01-17 The Regents Of The University Of California Quantum computation with quantum dots and terahertz cavity quantum electrodynamics
DE69933556T2 (de) * 1999-08-19 2007-08-30 Hitachi Europe Ltd., Maidenhead Photodetektor
JP3427179B2 (ja) * 2000-02-16 2003-07-14 東北大学長 核スピン制御素子及びその制御方法
DE10123132A1 (de) * 2000-05-02 2001-11-22 Hahn Meitner Inst Berlin Gmbh Molekulare Anordnung mit einer Strukturausbildung und deren Anwendung für quantenmechanische Informationsverarbeitung
AUPQ975900A0 (en) * 2000-08-30 2000-09-21 Unisearch Limited A process for the fabrication of a quantum computer
US7212974B2 (en) * 2001-07-11 2007-05-01 Daniel Kilbank System and method for compressing and encoding data
EP1286303A1 (fr) * 2001-08-13 2003-02-26 Hitachi Europe Limited Ordinateur quantique
AUPR728901A0 (en) * 2001-08-27 2001-09-20 Unisearch Limited Method and system for introducing an ion into a substrate
CN1545485A (zh) * 2001-08-27 2004-11-10 I 在用于量子计算机的硅晶体中的替代的施主原子
US20090182542A9 (en) * 2001-12-22 2009-07-16 Hilton Jeremy P Hybrid classical-quantum computer architecture for molecular modeling
GB0205011D0 (en) * 2002-03-04 2002-04-17 Univ London A gate for information processing
KR100997699B1 (ko) * 2002-03-05 2010-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
WO2003091842A2 (fr) * 2002-04-23 2003-11-06 Daniel Kilbank Systeme et procede permettant d'utiliser les micro-ondelettes dans les communications
US7018852B2 (en) 2002-08-01 2006-03-28 D-Wave Systems, Inc. Methods for single qubit gate teleportation
US7451292B2 (en) * 2002-08-10 2008-11-11 Thomas J Routt Methods for transmitting data across quantum interfaces and quantum gates using same
AU2003250608B2 (en) * 2002-08-20 2009-05-14 Newsouth Innovations Pty Limited Solid state charge qubit device
AU2002950888A0 (en) * 2002-08-20 2002-09-12 Unisearch Limited Quantum device
IL152565A0 (en) * 2002-10-31 2003-05-29 Erez Yahalomi Size regulating systems
US7364923B2 (en) 2003-03-03 2008-04-29 The Governing Council Of The University Of Toronto Dressed qubits
US7408486B2 (en) * 2003-04-21 2008-08-05 Qbit Corporation System and method for using a microlet-based modem
CA2537602A1 (fr) 2003-09-05 2005-03-17 D-Wave Systems, Inc. Bits quantiques supraconducteurs a charge de phase
US7216038B2 (en) * 2003-09-11 2007-05-08 Franco Vitaliano Quantum information processing elements and quantum information processing platforms using such elements
US7219017B2 (en) * 2003-09-11 2007-05-15 Franco Vitaliano Quantum information processing elements and quantum information processing platforms using such elements
US7219018B2 (en) * 2003-09-11 2007-05-15 Franco Vitaliano Quantum information processing elements and quantum information processing platforms using such elements
US7321884B2 (en) * 2004-02-23 2008-01-22 International Business Machines Corporation Method and structure to isolate a qubit from the environment
US7135697B2 (en) * 2004-02-25 2006-11-14 Wisconsin Alumni Research Foundation Spin readout and initialization in semiconductor quantum dots
US20070239366A1 (en) * 2004-06-05 2007-10-11 Hilton Jeremy P Hybrid classical-quantum computer architecture for molecular modeling
WO2005124674A1 (fr) * 2004-06-15 2005-12-29 National Research Council Of Canada Element de calcul commande en tension destine a un ordinateur quantique
US20060007025A1 (en) * 2004-07-08 2006-01-12 Manish Sharma Device and method for encoding data, and a device and method for decoding data
JP2006261610A (ja) * 2005-03-18 2006-09-28 Hokkaido Univ 核スピンメモリセルおよび情報処理回路
KR20060080134A (ko) * 2006-02-28 2006-07-07 안도열 실리콘 전자구조의 계곡축퇴를 이용한 양자비트 구현방법
US7875876B1 (en) 2006-06-15 2011-01-25 Hrl Laboratories, Llc Scalable quantum computer
CN102530856B (zh) * 2006-12-20 2016-12-14 复旦大学附属中山医院 氧化还原纳米药物量子点构成室温超导量子比特网络的方法
US7985965B2 (en) * 2007-03-29 2011-07-26 Raytheon Company Quantum computing device and method including qubit arrays of entangled states using negative refractive index lenses
US7790051B1 (en) 2007-10-31 2010-09-07 Sandia Corporation Isolating and moving single atoms using silicon nanocrystals
AU2009214818B2 (en) * 2008-02-11 2014-05-01 Newsouth Innovations Pty Limited Control and readout of electron or hole spin
JP5513507B2 (ja) * 2008-09-03 2014-06-04 ディー−ウェイブ システムズ，インコーポレイテッド 量子プロセッサ素子の能動的補償のためのシステム、方法および装置
US11235062B2 (en) * 2009-03-06 2022-02-01 Metaqor Llc Dynamic bio-nanoparticle elements
US11096901B2 (en) 2009-03-06 2021-08-24 Metaqor Llc Dynamic bio-nanoparticle platforms
US8612499B1 (en) * 2010-11-01 2013-12-17 Robert R. Tucci Method for evaluating quantum operator averages
US8816325B2 (en) * 2011-10-07 2014-08-26 The Regents Of The University Of California Scalable quantum computer architecture with coupled donor-quantum dot qubits
CN102779288B (zh) * 2012-06-26 2015-09-30 中国矿业大学 一种基于场理论的本体分析方法
CN103512653B (zh) * 2012-06-29 2016-12-21 新昌县冠阳技术开发有限公司 一种可测量反射光的光自旋霍尔效应的装置
WO2014026222A1 (fr) * 2012-08-13 2014-02-20 Newsouth Innovations Pty Limited Logique quantique
US9691033B2 (en) * 2013-03-20 2017-06-27 Newsouth Innovations Pty Limited Quantum computing with acceptor-based qubits
WO2015118579A1 (fr) * 2014-02-10 2015-08-13 独立行政法人理化学研究所 Procédé d'attaque de skyrmion
AU2015229255A1 (en) * 2014-03-12 2016-09-29 Temporal Defense Systems, Llc Solving digital logic constraint problems via adiabatic quantum computation
EP2927963B1 (fr) * 2014-04-02 2021-05-26 Hitachi, Ltd. Dispositif à effet tunnel à charge unique
ES2787623T3 (es) 2014-11-03 2020-10-16 Newsouth Innovations Pty Ltd Procesador cuántico
US10740689B2 (en) 2015-04-10 2020-08-11 Microsoft Technology Licensing, Llc Method and system for quantum circuit synthesis using quaternion algebra
US11113084B2 (en) 2015-04-10 2021-09-07 Microsoft Technology Licensing, Llc Method and system for approximate quantum circuit synthesis using quaternion algebra
EP3380996A4 (fr) * 2015-11-27 2018-11-14 Qoherence Instruments Corp. Systèmes, dispositifs et procédés d'interaction avec des informations quantiques stockées dans des spins
CN109313726B (zh) * 2015-12-30 2023-07-11 谷歌有限责任公司 使用电介质减薄来减少量子设备中的表面损耗和杂散耦合
EP3402744A4 (fr) * 2016-01-15 2019-08-21 Yale University Techniques de manipulation d'états à deux qubit quantums et systèmes et procédés associés
US10636955B2 (en) * 2016-05-20 2020-04-28 Arizona Board Of Regents On Behalf Of The University Of Arizona Terahertz transistor
US10929769B2 (en) 2016-06-08 2021-02-23 Socpra Sciences Et Génie S.E.C. Electronic circuit for control or coupling of single charges or spins and methods therefor
US10311370B2 (en) * 2016-08-17 2019-06-04 International Business Machines Corporation Efficient reduction of resources for the simulation of Fermionic Hamiltonians on quantum hardware
WO2018063205A1 (fr) * 2016-09-29 2018-04-05 Intel Corporation Dispositifs de communication sans fil sur puce pour bits quantiques
CN107807342B (zh) * 2017-10-31 2023-07-07 国网安徽省电力有限公司电力科学研究院 用于电流互感器的绝缘缺陷检测装置及方法
WO2019118442A1 (fr) 2017-12-11 2019-06-20 Yale University Élément inductif asymétrique non linéaire supraconducteur et systèmes et procédés associés
US10903413B2 (en) 2018-06-20 2021-01-26 Equal!.Labs Inc. Semiconductor process optimized for quantum structures
US11450760B2 (en) 2018-06-20 2022-09-20 equal1.labs Inc. Quantum structures using aperture channel tunneling through depletion region
US11423322B2 (en) 2018-06-20 2022-08-23 equal1.labs Inc. Integrated quantum computer incorporating quantum core and associated classical control circuitry
US10562764B2 (en) 2018-06-20 2020-02-18 equal1.labs Inc. Quantum shift register based ancillary quantum interaction gates
US10482388B1 (en) * 2018-06-29 2019-11-19 National Technology & Engineering Solutions Of Sandia, Llc Spin-orbit qubit using quantum dots
US20210295196A1 (en) * 2018-08-07 2021-09-23 PsiQuantum Corp. Generation of entangled photonic states
US20210256413A1 (en) * 2018-08-23 2021-08-19 The University Of Melbourne Quantum computer arrays
US11126062B1 (en) 2018-11-21 2021-09-21 PsiQuantum Corp. Generation of entangled photonic states
EP3912200B1 (fr) 2019-01-17 2024-05-15 Yale University Circuit josephson non linéaire
US20220149216A1 (en) * 2019-01-31 2022-05-12 Newsouth Innovations Pty Limited An advanced processing element and system
KR102126448B1 (ko) 2019-03-25 2020-06-24 국방과학연구소 원자 스핀을 이용한 회전측정 장치
US20220269974A1 (en) * 2019-07-17 2022-08-25 President And Fellows Of Harvard College Nanophotonic quantum memory
CN113030145A (zh) * 2019-12-09 2021-06-25 华东师范大学 利用核自旋单态选择性检测目标物的方法
CN113030144B (zh) * 2019-12-09 2022-12-06 华东师范大学 利用核自旋单态实现对目标物进行磁共振成像的方法及应用
US20220147824A1 (en) 2020-11-12 2022-05-12 equal1.labs Inc. Accelerated Learning In Neural Networks Incorporating Quantum Unitary Noise And Quantum Stochastic Rounding Using Silicon Based Quantum Dot Arrays

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5530263A (en) * 1994-08-16 1996-06-25 International Business Machines Corporation Three dot computing elements
US5608229A (en) * 1994-09-16 1997-03-04 Fujitsu Limited Quantum box semiconductor device
US5671437A (en) * 1991-06-21 1997-09-23 Sony Corporation Quantum dot-tunnel device and information processing apparatus and method using same
US5793091A (en) * 1996-12-13 1998-08-11 International Business Machines Corporation Parallel architecture for quantum computers using ion trap arrays

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US550263A (en) * 1895-11-26 Stick
JP3635683B2 (ja) * 1993-10-28 2005-04-06 ソニー株式会社 電界効果トランジスタ
US5940193A (en) * 1997-03-26 1999-08-17 The United States Of America As Represented By The Secretary Of The Air Force General purpose quantum computing
JP3028072B2 (ja) * 1997-05-13 2000-04-04 日本電気株式会社 磁場検出素子
WO1998059255A1 (fr) * 1997-06-24 1998-12-30 California Institute Of Technology Procede de suppression du bruit dans les mesures
US6218832B1 (en) * 1999-02-16 2001-04-17 International Business Machines Corporation Nuclear magnetic resonance quantum computing method with improved solvents

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5671437A (en) * 1991-06-21 1997-09-23 Sony Corporation Quantum dot-tunnel device and information processing apparatus and method using same
US5530263A (en) * 1994-08-16 1996-06-25 International Business Machines Corporation Three dot computing elements
US5608229A (en) * 1994-09-16 1997-03-04 Fujitsu Limited Quantum box semiconductor device
US5793091A (en) * 1996-12-13 1998-08-11 International Business Machines Corporation Parallel architecture for quantum computers using ion trap arrays

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
CHUANG I L, ET AL.: "EXPERIMENTAL REALIZATION OF A QUANTUM ALGORITHM", NATURE, NATURE PUBLISHING GROUP, UNITED KINGDOM, vol. 393, 14 May 1998 (1998-05-14), United Kingdom, pages 143 - 146, XP001032166, ISSN: 0028-0836, DOI: 10.1038/30181 *
DIVINCENZO D. P.: "QUANTUM COMPUTATION.", SCIENCE, AMERICAN ASSOCIATION FOR THE ADVANCEMENT OF SCIENCE, US, vol. 270., 13 October 1995 (1995-10-13), US, pages 255 - 261., XP000929608, ISSN: 0036-8075, DOI: 10.1126/science.270.5234.255 *
KANE B. E.: "A SILICON-BASED NUCLEAR SPIN QUANTUM COMPUTER.", NATURE, NATURE PUBLISHING GROUP, UNITED KINGDOM, vol. 393., no. 6681., 1 January 1998 (1998-01-01), United Kingdom, pages 133 - 137., XP000907134, ISSN: 0028-0836, DOI: 10.1038/30156 *
KOSTYUCHENKO V. V.: "SPIN-WAVE FLUCTUATIONS IN A QUANTUM COMPUTER BASED ON SPIN-POLARIZED ELECTRONS.", RUSSIAN MICROELECTRONICS, NEW YORK, NY, US, vol. 25., no. 05., 1 January 1996 (1996-01-01), US, pages 327 - 329., XP000933883, ISSN: 1063-7397 *
LLOYD S: "A POTENTIALLY REALIZABLE QUANTUM COMPUTER", SCIENCE, AMERICAN ASSOCIATION FOR THE ADVANCEMENT OF SCIENCE, US, vol. 261, 17 September 1993 (1993-09-17), US, pages 1569 - 1571, XP002909827, ISSN: 0036-8075, DOI: 10.1126/science.261.5128.1569 *
See also references of EP1016216A4 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001010027A1 (fr) * 1999-07-30 2001-02-08 Javier Tejada Palacios Ordinateur quantique utilisant des qubits magnetiques
WO2003049197A1 (fr) * 2001-12-06 2003-06-12 Japan Science And Technology Agency Dispositif de calcul du quantum de spins nucleaires dans un solide
US7291891B2 (en) 2001-12-06 2007-11-06 Japan Science And Technology Agency In-solid nuclear spin quantum calculation device
WO2016187676A1 (fr) * 2015-05-28 2016-12-01 Newsouth Innovations Pty Limited Appareil de traitement quantique et procédé de fonctionnement d'un appareil de traitement quantique
US10528884B2 (en) 2015-05-28 2020-01-07 Newsouth Innovations Pty Limited Quantum processing apparatus and a method of operating a quantum processing apparatus
WO2020005417A1 (fr) * 2018-06-25 2020-01-02 Intel Corporation Programmation adaptative de dispositifs qubits à points quantiques

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US6369404B1 (en) 2002-04-09
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ZA988530B (en) 1999-03-18
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