WO1997044900A1 - Appareil a circuit combinatoire - Google Patents

Appareil a circuit combinatoire Download PDF

Info

Publication number
WO1997044900A1
WO1997044900A1 PCT/DE1997/000940 DE9700940W WO9744900A1 WO 1997044900 A1 WO1997044900 A1 WO 1997044900A1 DE 9700940 W DE9700940 W DE 9700940W WO 9744900 A1 WO9744900 A1 WO 9744900A1
Authority
WO
WIPO (PCT)
Prior art keywords
mosfet
circuit
voltage
control circuit
arrangement according
Prior art date
Application number
PCT/DE1997/000940
Other languages
German (de)
English (en)
Inventor
Jenö Tihanyi
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO1997044900A1 publication Critical patent/WO1997044900A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0006—Arrangements for supplying an adequate voltage to the control circuit of converters

Definitions

  • the invention relates to a switching power supply according to the preamble of claim 1.
  • a circuit arrangement for a switching power supply according to the preamble of claim 1 is known from the data sheet from Power Integrations, Inc., "A Low Cost, Low Part Count TOPSwitch TM Supply", August 1994.
  • the semiconductor component included therein contains all the necessary normal and protective functions in a monolithically integrated form. To manufacture such a component, however, a special technology is necessary, which is not always available.
  • the advantage of the switching power supply according to the invention is that no special semiconductor control element is required. This is accomplished according to the invention in that the load path of a high-voltage MOSFET is connected in series with the load path of an additional power MOSFET. A control circuit that consists of the gate voltage of the high voltage MOSFET is now used to control the second power MOSFET.
  • control circuit can advantageously be integrated into the second power MOSFET, which results in a simple and inexpensive control and protection IC.
  • the control circuit advantageously generates a pulse-width-modulated control signal. Furthermore, the control circuit can advantageously limit the short-circuit current of the power MOSFET and can include temperature monitoring and shutdown. Finally, it is also possible to limit the di / dt in the event of a short circuit.
  • a two-chip solution housed in a housing can also be selected.
  • connection terminal 3 denotes a connection terminal to which a supply voltage V b b can be applied.
  • This connection terminal 3 is connected via a winding 8, which is part of a transformer, to the drain connection Di of a high-voltage MOSFET 1.
  • the source terminal Si of the high-voltage MOSFET 1 is connected to the drain terminal D 2 of a low-resistance MOSFET 2, which is suitable for low voltages.
  • the source terminal S 2 of the MOSFET 2 is connected to a reference potential, for example ground.
  • the transformer has a second winding 7, one connection of which is connected via a diode 5 in the flow direction to the first connection of a capacitor 6, the second connection of which is connected to the other connection of the winding 7 and to ground.
  • a tap is provided which is connected to the gate connection Gi of the high-voltage MOSFET 1.
  • On Power supply component 4 is provided, which is connected between the supply voltage terminal 3 and ground and generates an output signal which is supplied to the gate terminal G : of the high-voltage MOSFET 1. This start supply component 4 enables the circuit arrangement to start up.
  • control circuit 14 is provided, which is connected on the one hand to ground and on the other hand to the gate connection Gi of the high-voltage MOSFET 1.
  • This control circuit 14 generates an output signal which is supplied to the gate connection of the MOSFET 2. Furthermore, it has an input which is connected to the drain connection D 2 of the MOSFET 2.
  • the transformer has a further winding 9, which is connected on the one hand via a diode 10 in the flow direction to a connection terminal 12 and the first connection of a capacitor 11, and its second connection to the second connection of the capacitor 11 and a connecting terminal 13 is connected.
  • the output voltage of the switching power supply can be tapped off in a known manner at terminals 12 and 13.
  • a high-performance MOSFET e.g. an IGBT can also be used.
  • This component can e.g. designed for voltages up to 600 volts.
  • the second low-resistance MOSFET 2 on the other hand, only has to be dimensioned for voltages of approximately 20 volts.
  • the high-voltage MOSFET 1, or a corresponding IGBT is supplied with a constant gate voltage via the gate connection Gi.
  • a start supply component 4 is used to start up and thus to generate the gate voltage.
  • the actually necessary tasks for controlling the switched-mode power supply are performed by the control circuit 14 taken over in connection with the low-resistance MOSFET 2.
  • This MOSFET 2 can be very small because it is only equipped for low voltages and it switches the current through the transistor 1 in a cascode configuration. Because of its correspondingly small input capacity, no complex circuit has to be designed for its control. Accordingly, the driver part in the control circuit 14 does not have to deliver high currents.
  • the control circuit 14 generates a pulse-width modulated
  • the regulation of the pulse width of the gate voltage signal of the transistor 2 takes place in such a way that the control signal at the terminal G 2 remains constant. This signal is also used for the power supply to the control part 14.
  • the control circuit 14 can limit the short-circuit current of the transistor 2, for example by detecting the drain source voltage. This also automatically limits the short-circuit current of transistor 1.
  • a temperature monitoring circuit can be provided in a known manner, which carries out a complete shutdown of the current when a predetermined chip temperature of the transistor 2 is exceeded.
  • Another function can be the limitation of di-dt in the event of a short circuit when transistor 2 is switched on. By means of a correspondingly integrated logic, the circuit can be allowed to continue to run after all faults have been eliminated by the control circuit 14.
  • the control circuit 14 can, as indicated by the dashed line, be created together with the transistor 2 in a monolithic form, so that it has the three connections G 2 , D 2 and S 2 externally.
  • a two-chip form can also be integrated in a housing, the control circuit 14 and the transistor 2 each forming a chip.
  • the heat capacity of the transistor 1 and the circuit 15 should be roughly in the following relationship:
  • the total values of chip and housing should be decisive for the heat capacity values. Since the high-voltage MOSFET chip is generally much larger than the chip of the second control transistor 2 and the portion of the control circuit 14 has a small area, this requirement will automatically be met in practice.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

Appareil à circuit combinatoire comprenant un transistor à effet de champ MOS (MOSFET) de puissance, dont le parcours de charge est connecté en série à un enroulement à bobine d'un répéteur, ainsi qu'un circuit d'alimentation de la tension de grille, dont le signal de sortie est transmis à la borne de la grille du MOSFET de puissance, caractérisé en ce que le MOSFET de puissance (1) est un MOSFET haute tension et en ce qu'il est prévu un deuxième MOFSET (2), dont le parcours de charge est monté en série par rapport au parcours de charge du MOSFET haute tension (1) et qui est du type faiblement ohmique, ainsi qu'un circuit de commande (14) qui es alimenté par le signal appliqué à la borne de la grille (G1) du MOSFET haute tension (1) et qui génère un signal pour la commande du deuxième MOSFET (2).
PCT/DE1997/000940 1996-05-17 1997-05-09 Appareil a circuit combinatoire WO1997044900A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19620034A DE19620034C2 (de) 1996-05-17 1996-05-17 Schaltnetzgerät
DE19620034.2 1996-05-17

Publications (1)

Publication Number Publication Date
WO1997044900A1 true WO1997044900A1 (fr) 1997-11-27

Family

ID=7794644

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1997/000940 WO1997044900A1 (fr) 1996-05-17 1997-05-09 Appareil a circuit combinatoire

Country Status (2)

Country Link
DE (1) DE19620034C2 (fr)
WO (1) WO1997044900A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003079527A2 (fr) * 2002-03-14 2003-09-25 Tyco Electronics Corporation Ci de regulateur de modulation d'impulsions en largeur, basse tension et a trois bornes

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1126586A1 (fr) 2000-02-11 2001-08-22 SCG France SAS Alimentation auxiliaire régulée
DE10336237A1 (de) * 2003-08-07 2005-03-10 Infineon Technologies Ag Gleichrichter mit Selbststeuerung
DE202011002880U1 (de) * 2011-01-29 2012-05-02 Aizo Ag Halbleiter-Netzteil
US9590507B1 (en) 2015-12-18 2017-03-07 Infineon Technologies Austria Ag Auxiliary supply for a switched-mode power supply controller using bang-bang regulation
US10153702B2 (en) 2017-02-07 2018-12-11 Infineon Technologies Austria Ag Switched-mode power supply controller using a single pin for both input voltage sensing and control of power supply charging

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0343730A2 (fr) * 1988-05-26 1989-11-29 Koninklijke Philips Electronics N.V. Etage de commande en classe AB à large bande de la cathode d'un tube à rayons cathodiques
US5014178A (en) * 1990-05-14 1991-05-07 Power Integrations, Inc. Self powering technique for integrated switched mode power supply
EP0585789A1 (fr) * 1992-09-01 1994-03-09 Power Integrations, Inc. Circuit intégré à trois pattes de connexion pour alimentation de puissance à découpage
EP0585788A1 (fr) * 1992-09-01 1994-03-09 Power Integrations, Inc. Circuit intégré pour alimentation à découpage avec auto-polarisation au démarrage
EP0605925A2 (fr) * 1993-01-04 1994-07-13 Koninklijke Philips Electronics N.V. Circuit d'alimentation en puissance

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0343730A2 (fr) * 1988-05-26 1989-11-29 Koninklijke Philips Electronics N.V. Etage de commande en classe AB à large bande de la cathode d'un tube à rayons cathodiques
US5014178A (en) * 1990-05-14 1991-05-07 Power Integrations, Inc. Self powering technique for integrated switched mode power supply
EP0585789A1 (fr) * 1992-09-01 1994-03-09 Power Integrations, Inc. Circuit intégré à trois pattes de connexion pour alimentation de puissance à découpage
EP0585788A1 (fr) * 1992-09-01 1994-03-09 Power Integrations, Inc. Circuit intégré pour alimentation à découpage avec auto-polarisation au démarrage
EP0605925A2 (fr) * 1993-01-04 1994-07-13 Koninklijke Philips Electronics N.V. Circuit d'alimentation en puissance

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
"EN DIRECT DU SECTEUR", ELECTRONIQUE, no. 19, 1 June 1992 (1992-06-01), pages 86, XP000304879 *
RICHARDSON J ET AL: "A MOSFET-GTO CASCODE-CONNECTED POWER SWITCH FOR HIGH EFFICIENCY", PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AN VARIABLE SPEED DRIVES, LONDON, 17 - 19 JULY, 1990, no. CONF. 4, 17 July 1990 (1990-07-17), INSTITUTION OF ELECTRICAL ENGINEERS, pages 411 - 416, XP000143642 *
SHAEFFER, L.: "Use FET's to switch high currents.", ELECTRONIC DESIGN, vol. 24, no. 9, 26 April 1976 (1976-04-26), HASBROUCK HEIGHTS, NEW JERSEY US, pages 66 - 72, XP002039757 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003079527A2 (fr) * 2002-03-14 2003-09-25 Tyco Electronics Corporation Ci de regulateur de modulation d'impulsions en largeur, basse tension et a trois bornes
WO2003079527A3 (fr) * 2002-03-14 2004-04-01 Tyco Electronics Corp Ci de regulateur de modulation d'impulsions en largeur, basse tension et a trois bornes
US6775164B2 (en) 2002-03-14 2004-08-10 Tyco Electronics Corporation Three-terminal, low voltage pulse width modulation controller IC
CN100449942C (zh) * 2002-03-14 2009-01-07 冲电气工业株式会社 三端子、低电压脉宽调制控制器集成电路

Also Published As

Publication number Publication date
DE19620034C2 (de) 1998-04-09
DE19620034A1 (de) 1997-11-27

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