WO1997044900A1 - Combinational circuit device - Google Patents

Combinational circuit device Download PDF

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Publication number
WO1997044900A1
WO1997044900A1 PCT/DE1997/000940 DE9700940W WO9744900A1 WO 1997044900 A1 WO1997044900 A1 WO 1997044900A1 DE 9700940 W DE9700940 W DE 9700940W WO 9744900 A1 WO9744900 A1 WO 9744900A1
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WO
WIPO (PCT)
Prior art keywords
mosfet
circuit
voltage
control circuit
arrangement according
Prior art date
Application number
PCT/DE1997/000940
Other languages
German (de)
French (fr)
Inventor
Jenö Tihanyi
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO1997044900A1 publication Critical patent/WO1997044900A1/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0006—Arrangements for supplying an adequate voltage to the control circuit of converters

Definitions

  • the invention relates to a switching power supply according to the preamble of claim 1.
  • a circuit arrangement for a switching power supply according to the preamble of claim 1 is known from the data sheet from Power Integrations, Inc., "A Low Cost, Low Part Count TOPSwitch TM Supply", August 1994.
  • the semiconductor component included therein contains all the necessary normal and protective functions in a monolithically integrated form. To manufacture such a component, however, a special technology is necessary, which is not always available.
  • the advantage of the switching power supply according to the invention is that no special semiconductor control element is required. This is accomplished according to the invention in that the load path of a high-voltage MOSFET is connected in series with the load path of an additional power MOSFET. A control circuit that consists of the gate voltage of the high voltage MOSFET is now used to control the second power MOSFET.
  • control circuit can advantageously be integrated into the second power MOSFET, which results in a simple and inexpensive control and protection IC.
  • the control circuit advantageously generates a pulse-width-modulated control signal. Furthermore, the control circuit can advantageously limit the short-circuit current of the power MOSFET and can include temperature monitoring and shutdown. Finally, it is also possible to limit the di / dt in the event of a short circuit.
  • a two-chip solution housed in a housing can also be selected.
  • connection terminal 3 denotes a connection terminal to which a supply voltage V b b can be applied.
  • This connection terminal 3 is connected via a winding 8, which is part of a transformer, to the drain connection Di of a high-voltage MOSFET 1.
  • the source terminal Si of the high-voltage MOSFET 1 is connected to the drain terminal D 2 of a low-resistance MOSFET 2, which is suitable for low voltages.
  • the source terminal S 2 of the MOSFET 2 is connected to a reference potential, for example ground.
  • the transformer has a second winding 7, one connection of which is connected via a diode 5 in the flow direction to the first connection of a capacitor 6, the second connection of which is connected to the other connection of the winding 7 and to ground.
  • a tap is provided which is connected to the gate connection Gi of the high-voltage MOSFET 1.
  • On Power supply component 4 is provided, which is connected between the supply voltage terminal 3 and ground and generates an output signal which is supplied to the gate terminal G : of the high-voltage MOSFET 1. This start supply component 4 enables the circuit arrangement to start up.
  • control circuit 14 is provided, which is connected on the one hand to ground and on the other hand to the gate connection Gi of the high-voltage MOSFET 1.
  • This control circuit 14 generates an output signal which is supplied to the gate connection of the MOSFET 2. Furthermore, it has an input which is connected to the drain connection D 2 of the MOSFET 2.
  • the transformer has a further winding 9, which is connected on the one hand via a diode 10 in the flow direction to a connection terminal 12 and the first connection of a capacitor 11, and its second connection to the second connection of the capacitor 11 and a connecting terminal 13 is connected.
  • the output voltage of the switching power supply can be tapped off in a known manner at terminals 12 and 13.
  • a high-performance MOSFET e.g. an IGBT can also be used.
  • This component can e.g. designed for voltages up to 600 volts.
  • the second low-resistance MOSFET 2 on the other hand, only has to be dimensioned for voltages of approximately 20 volts.
  • the high-voltage MOSFET 1, or a corresponding IGBT is supplied with a constant gate voltage via the gate connection Gi.
  • a start supply component 4 is used to start up and thus to generate the gate voltage.
  • the actually necessary tasks for controlling the switched-mode power supply are performed by the control circuit 14 taken over in connection with the low-resistance MOSFET 2.
  • This MOSFET 2 can be very small because it is only equipped for low voltages and it switches the current through the transistor 1 in a cascode configuration. Because of its correspondingly small input capacity, no complex circuit has to be designed for its control. Accordingly, the driver part in the control circuit 14 does not have to deliver high currents.
  • the control circuit 14 generates a pulse-width modulated
  • the regulation of the pulse width of the gate voltage signal of the transistor 2 takes place in such a way that the control signal at the terminal G 2 remains constant. This signal is also used for the power supply to the control part 14.
  • the control circuit 14 can limit the short-circuit current of the transistor 2, for example by detecting the drain source voltage. This also automatically limits the short-circuit current of transistor 1.
  • a temperature monitoring circuit can be provided in a known manner, which carries out a complete shutdown of the current when a predetermined chip temperature of the transistor 2 is exceeded.
  • Another function can be the limitation of di-dt in the event of a short circuit when transistor 2 is switched on. By means of a correspondingly integrated logic, the circuit can be allowed to continue to run after all faults have been eliminated by the control circuit 14.
  • the control circuit 14 can, as indicated by the dashed line, be created together with the transistor 2 in a monolithic form, so that it has the three connections G 2 , D 2 and S 2 externally.
  • a two-chip form can also be integrated in a housing, the control circuit 14 and the transistor 2 each forming a chip.
  • the heat capacity of the transistor 1 and the circuit 15 should be roughly in the following relationship:
  • the total values of chip and housing should be decisive for the heat capacity values. Since the high-voltage MOSFET chip is generally much larger than the chip of the second control transistor 2 and the portion of the control circuit 14 has a small area, this requirement will automatically be met in practice.

Abstract

This invention concerns a combinational circuit device comprising a power MOS-FET, the load link of which is connected in series to a wire wound coil of a repeater, as well as a gate voltage supply circuit, the output signal of which is directed to the gate terminal of the power MOS-FET, in which the power MOS-FET (1) is a high voltage MOS-FET and there are a second MOS-FET (2), the load link of which is connected in series to the load link of high voltage MOS-FET (1) with low ohm construction, and a control circuit (14), which is fed from the signal applied to the gate terminal (G1) of the high voltage MOS-FET (1) and produces a signal for controlling the second MOS-FET (2).

Description

Beschreibungdescription
SchaltnetzgerätSwitching power supply
Die Erfindung bezieht sich auf ein Schaltnetzgerät gemäß dem Oberbegriff des Anspruchs 1.The invention relates to a switching power supply according to the preamble of claim 1.
In zunehmendem Maße werden einfache und preiswerte Schalt- netzgeräte für batteriebetriebene Geräte gefordert. Hierzu sollen Halbleiterschalter zur Verfügung gestellt werden, welche hohe Spannungen aushalten, einen Kurzschlußschutz ge¬ währen und kostengünstig herzustellen sind.Simple and inexpensive switching power supplies for battery-operated devices are increasingly required. For this purpose, semiconductor switches are to be made available which can withstand high voltages, provide short-circuit protection and are inexpensive to manufacture.
Aus dem Datenblatt der Firma Power Integrations, Inc., "A Low Cost, Low Part Count TOPSwitch™ Supply", August 1994 ist eine Schaltungsanordnung für ein Schaltnetzgerät gemäß dem Oberbegriff des Anspruchs 1 bekannt. Das darin einbezogene Halbleiterbauelement enthält in monolithisch integrierter Form alle notwendigen Normal- und Schutzfunktionen. Zur Her- Stellung eines derartigen Bauelements ist jedoch eine spe¬ zielle Technologie notwendig, die nicht immer verfügbar ist.A circuit arrangement for a switching power supply according to the preamble of claim 1 is known from the data sheet from Power Integrations, Inc., "A Low Cost, Low Part Count TOPSwitch ™ Supply", August 1994. The semiconductor component included therein contains all the necessary normal and protective functions in a monolithically integrated form. To manufacture such a component, however, a special technology is necessary, which is not always available.
Aufgabe der vorliegenden Erfindung ist es daher, ein Schalt- netzgerät anzugeben, welches mit im wesentlichen normalen Bauelementen mit möglichst geringem Bauelementeaufwand her¬ stellbar ist.It is therefore an object of the present invention to provide a switching power supply which can be produced using essentially normal components with the least possible component expenditure.
Diese Aufgabe wird durch den kennzeichnenden Teil des An¬ spruchs 1 gelöst. Weiterbildungen sind Kennzeichen der Un- teransprüche.This object is achieved by the characterizing part of claim 1. Further training is a hallmark of the subclaims.
Vorteil des erfindungsgemäßen Schaltnetzgerätes ist es, daß kein spezielles Halbleitersteuerelement benötigt wird. Erfin¬ dungsgemäß wird dies dadurch bewerkstelligt, daß die Last- strecke eines Hochvolt-MOSFET mit der Laststrecke eines zu¬ sätzlichen Leistungs-MOSFET in Reihe geschaltet wird. Eine Steuerschaltung, die aus der Gatespannung des Hochspannungs- MOSFET gespeist wird, dient nun zur Ansteuerung des zweiten Leistungs-MOSFET.The advantage of the switching power supply according to the invention is that no special semiconductor control element is required. This is accomplished according to the invention in that the load path of a high-voltage MOSFET is connected in series with the load path of an additional power MOSFET. A control circuit that consists of the gate voltage of the high voltage MOSFET is now used to control the second power MOSFET.
Vorteilhafterweise kann die Steuerschaltung in den zweiten Leistungs-MOSFET integriert werden, wodurch sich ein einfa¬ ches und kostengünstiges Steuer- und Schutz-IC ergibt.The control circuit can advantageously be integrated into the second power MOSFET, which results in a simple and inexpensive control and protection IC.
Vorteilhafterweise erzeugt die Steuerschaltung ein pulswei- ten-moduliertes Steuersignal. Des weiteren kann die Steuer- schaltung vorteilhafterweise den Kurzschlußstrom des Lei¬ stungs-MOSFET begrenzen, sowie eine Temperaturüberwachung und Abschaltung enthalten. Schließlich ist auch noch ein Limitie¬ ren des di/dt bei Kurzschluß möglich.The control circuit advantageously generates a pulse-width-modulated control signal. Furthermore, the control circuit can advantageously limit the short-circuit current of the power MOSFET and can include temperature monitoring and shutdown. Finally, it is also possible to limit the di / dt in the event of a short circuit.
Anstelle einer vollständigen Integration der Steuerschaltung mit dem zweiten Leistungshalbleiter kann auch eine in einem Gehäuse untergebrachte Zwei-Chip-Lösung gewählt werden.Instead of a complete integration of the control circuit with the second power semiconductor, a two-chip solution housed in a housing can also be selected.
Die Erfindung wird nachfolgend anhand einer Figur näher er- läutert.The invention is explained in more detail below with the aid of a figure.
In der Figur ist mit 3 eine Anschlußklemme bezeichnet, an welche eine Versorgungsspannung Vbb anlegbar ist. Diese An¬ schlußklemme 3 ist über eine Wicklung 8, welche Teil eines Übertragers ist, mit dem Drainanschluß Di eines Hochspan¬ nungs-MOSFET 1 verbunden. Der Sourceanschluß Si des Hochspan¬ nungs-MOSFET 1 ist mit dem Drainanschluß D2 eines niederohmi- gen MOSFET 2, welcher für kleine Spannungen geeignet ist, verbunden. Der Sourceanschluß S2 des MOSFET 2 ist mit einem Bezugspotential, z.B. Masse verschaltet. Der Übertrager weist eine zweite Wicklung 7 auf, deren einer Anschluß über eine Diode 5 in Flußrichtung mit dem ersten Anschluß eines Kondensators 6 verschaltet ist, dessen zweiter Anschluß mit dem anderen Anschluß der Wicklung 7 und mit Masse verschaltet ist. Am Knotenpunkt aus Reihenschaltung der Diode 5 und des Kondensators 6 ist ein Abgriff vorgesehen, der mit dem Gateanschluß Gi des Hochspannungs-MOSFET 1 verbunden ist. Ein Stromversorgungsbauelement 4 ist vorgesehen, welches zwischen der Versorgungsspannungsklemme 3 und Masse geschaltet ist und ein Ausgangssignal erzeugt, welches dem Gateanschluß G: des Hochspannungs-MOSFET 1 zugeführt wird. Dieses Start- Versorgungsbauelement 4 ermöglicht das Anlaufen der Schal¬ tungsanordnung.In the figure, 3 denotes a connection terminal to which a supply voltage V b b can be applied. This connection terminal 3 is connected via a winding 8, which is part of a transformer, to the drain connection Di of a high-voltage MOSFET 1. The source terminal Si of the high-voltage MOSFET 1 is connected to the drain terminal D 2 of a low-resistance MOSFET 2, which is suitable for low voltages. The source terminal S 2 of the MOSFET 2 is connected to a reference potential, for example ground. The transformer has a second winding 7, one connection of which is connected via a diode 5 in the flow direction to the first connection of a capacitor 6, the second connection of which is connected to the other connection of the winding 7 and to ground. At the junction of the diode 5 and the capacitor 6 connected in series, a tap is provided which is connected to the gate connection Gi of the high-voltage MOSFET 1. On Power supply component 4 is provided, which is connected between the supply voltage terminal 3 and ground and generates an output signal which is supplied to the gate terminal G : of the high-voltage MOSFET 1. This start supply component 4 enables the circuit arrangement to start up.
Des weiteren ist eine Steuerschaltung 14 vorgesehen, die ei¬ nerseits mit Masse und andererseits mit dem Gateanschluß Gi des Hochspannungs-MOSFET 1 verbunden ist. Diese Steuerschal¬ tung 14 erzeugt ein Ausgangssignal, welches dem Gateanschluß des MOSFET 2 zugeführt wird. Des weiteren weist sie einen Eingang auf, der mit dem Drainanschluß D2 des MOSFET 2 ver¬ bunden ist.Furthermore, a control circuit 14 is provided, which is connected on the one hand to ground and on the other hand to the gate connection Gi of the high-voltage MOSFET 1. This control circuit 14 generates an output signal which is supplied to the gate connection of the MOSFET 2. Furthermore, it has an input which is connected to the drain connection D 2 of the MOSFET 2.
Der Übertrager weist eine weitere Wicklung 9 auf, die einer¬ seits über eine Diode 10 in Flußrichtung mit einer Anschlu߬ klemme 12 und dem ersten Anschluß eines Kondensators 11 ver¬ bunden ist, und dessen zweiter Anschluß mit dem zweiten An- schluß des Kondensators 11 und einer Anschlußklemme 13 ver¬ schaltet ist. An den Klemmen 12 und 13 ist in bekannter Weise die AusgangsSpannung des Schaltnetzgerätes abgreifbar.The transformer has a further winding 9, which is connected on the one hand via a diode 10 in the flow direction to a connection terminal 12 and the first connection of a capacitor 11, and its second connection to the second connection of the capacitor 11 and a connecting terminal 13 is connected. The output voltage of the switching power supply can be tapped off in a known manner at terminals 12 and 13.
Anstelle eines Hochleistungs-MOSFET 1 kann z.B. auch ein IGBT verwendet werden. Dieses Bauelement kann z.B. für Spannungen bis 600 Volt ausgelegt. Der zweite niederohmige MOSFET 2 hin¬ gegen muß lediglich für Spannungen von ca. 20 Volt dimensio¬ niert sein.Instead of a high-performance MOSFET 1, e.g. an IGBT can also be used. This component can e.g. designed for voltages up to 600 volts. The second low-resistance MOSFET 2, on the other hand, only has to be dimensioned for voltages of approximately 20 volts.
Der Hochspannungs-MOSFET 1, oder ein entsprechender IGBT, werden über den Gateanschluß Gi mit einer konstanten Gate¬ spannung versorgt. Hierzu dienen die zusätzliche Wicklung 7 und die sich daran anschließende Diode 5 und der Kondensator 6, an welchem sich die Gatespannung im Betrieb einstellt. Zum Anlaufen, und damit zum Erzeugen der Gatespannung dient ein Startversorgungsbauelement 4. Die eigentlich notwendigen Auf¬ gaben zur Steuerung des Schaltnetzteils werden von der Steu- erschaltung 14 in Verbindung mit dem niederohmigen MOSFET 2 übernommen. Dieser MOSFET 2 kann sehr klein sein, weil er nur für kleine Spannungen ausgerüstet ist und er den Strom durch den Transistor 1 in Kaskode-Konfiguration schaltet. Wegen seiner demgemäß kleinen Eingangskapazität muß für seine An- steuerung keine aufwendige Schaltung konzipiert werden. Dem¬ gemäß muß der Treiberteil in der Steuerschaltung 14 keine ho¬ hen Ströme liefern.The high-voltage MOSFET 1, or a corresponding IGBT, is supplied with a constant gate voltage via the gate connection Gi. The additional winding 7 and the adjoining diode 5 and the capacitor 6, on which the gate voltage is established during operation, serve this purpose. A start supply component 4 is used to start up and thus to generate the gate voltage. The actually necessary tasks for controlling the switched-mode power supply are performed by the control circuit 14 taken over in connection with the low-resistance MOSFET 2. This MOSFET 2 can be very small because it is only equipped for low voltages and it switches the current through the transistor 1 in a cascode configuration. Because of its correspondingly small input capacity, no complex circuit has to be designed for its control. Accordingly, the driver part in the control circuit 14 does not have to deliver high currents.
Die Steuerschaltung 14 erzeugt ein pulsweites moduliertesThe control circuit 14 generates a pulse-width modulated
Rechtecksignal mit einer Frequenz von > 50 KHz. Die Regelung der Pulsbreite des Gatespannungssignals des Transistors 2 er¬ folgt auf die Weise, daß das Steuersignal an der Klemme G2 konstant bleibt. Dieses Signal dient gleichzeitig auch für die Stromversorgung des Steuerteils 14. Desweiteren kann die Steuerschaltung 14 den Kurzschlußstrom des Transistors 2 zum Beispiel durch Erfassung der Drainsourcespannung limitieren. Dadurch wird automatisch auch der Kurzschlußstrom des Tran¬ sistors 1 limitiert. Schließlich kann eine Temperaturüberwa- chungsschaltung in bekannter Weise vorgesehen sein, die ein völliges Abschalten des Stromes bei Überschreitung einer vor¬ gegebenen Ciptemperatur des Transistors 2 durchführt. Eine weitere Funktion kann das Limitieren von di-dt beim Kurz¬ schluß im eingeschalteten Zustand des Transistors 2 sein. Durch eine entsprechend mitintegrierte Logik kann ein Weiter¬ laufen der Schaltung nach Beseitigung aller Störungen durch die Steuerschaltung 14 gestattet werden.Square wave with a frequency of> 50 KHz. The regulation of the pulse width of the gate voltage signal of the transistor 2 takes place in such a way that the control signal at the terminal G 2 remains constant. This signal is also used for the power supply to the control part 14. Furthermore, the control circuit 14 can limit the short-circuit current of the transistor 2, for example by detecting the drain source voltage. This also automatically limits the short-circuit current of transistor 1. Finally, a temperature monitoring circuit can be provided in a known manner, which carries out a complete shutdown of the current when a predetermined chip temperature of the transistor 2 is exceeded. Another function can be the limitation of di-dt in the event of a short circuit when transistor 2 is switched on. By means of a correspondingly integrated logic, the circuit can be allowed to continue to run after all faults have been eliminated by the control circuit 14.
Die Steuerschaltung 14 kann wie durch die gestrichelte Linie angedeutet, zusammen mit dem Transistor 2 in monolithischer Form erstellt werden, so daß sie extern die drei Anschlüsse G2, D2 und S2 aufweist. Es kann aber auch eine Zwei-Chip-Form in einem Gehäuse integriert sein, wobei die SteuerSchaltung 14 und der Transistor 2 jeweils einen Chip bilden. Für die Schutzwirkung sollte die Wärmekapazität des Transistors 1 und der Schaltung 15 etwa in folgendem Verhältnis stehen:
Figure imgf000007_0001
The control circuit 14 can, as indicated by the dashed line, be created together with the transistor 2 in a monolithic form, so that it has the three connections G 2 , D 2 and S 2 externally. However, a two-chip form can also be integrated in a housing, the control circuit 14 and the transistor 2 each forming a chip. For the protective effect, the heat capacity of the transistor 1 and the circuit 15 should be roughly in the following relationship:
Figure imgf000007_0001
Für die Wärmekapazitätswerte sollen die Gesamtwerte von Chip und Gehäuse maßgebend sein. Da im Allgemeinen der Hochvolt- MOSFET-Chip wesentlich größer ist, als der Chip des zweiten Steuertransistors 2 und der Anteil der Steuerschaltung 14 kleinflächig ist, wird diese Forderung in der Praxis automa¬ tisch erfüllt sein. The total values of chip and housing should be decisive for the heat capacity values. Since the high-voltage MOSFET chip is generally much larger than the chip of the second control transistor 2 and the portion of the control circuit 14 has a small area, this requirement will automatically be met in practice.

Claims

Patentansprüche claims
1. Schaltnetzgerät mit einem Leistungs-MOSFET, dessen Last¬ strecke in Reihe zu einer Spulenwicklung eines Übertragers geschaltet ist, sowie einer Gatespannungsversorgungsschal- tung, deren Ausgangssignal dem Gateanscchluß des Leistungs- MOSFET zugeführt wird, d a d u r c h g e k e n n z e i c h n e t, daß der Leistungs-MOSFET (1) ein Hochspannungs-MOSFET ist, ein zweiter MOSFET (2) vorgesehen ist, dessen Laststrecke in Reihe zur Laststrecke des Hochspannungs-MOSFET (1) geschaltet ist und der niederohmig ausgebildet ist, einer Steuerschaltung (14), die aus dem am Gateanschluß (Gi) des Hochspannungs-MOSFET (1) anliegenden Signal gespeist wird und ein Signal zur Ansteuerung des zweiten MOSFET (2) erzeugt.1. Switched-mode power supply with a power MOSFET, the load path of which is connected in series to a coil winding of a transformer, and a gate voltage supply circuit, the output signal of which is fed to the gate connection of the power MOSFET, characterized in that the power MOSFET (1) is a high-voltage MOSFET, a second MOSFET (2) is provided, the load path of which is connected in series with the load path of the high-voltage MOSFET (1) and which is of low impedance, a control circuit (14) which consists of the gate connection (Gi) of the high-voltage MOSFET (1) is fed and generates a signal for driving the second MOSFET (2).
2. Schaltungsanordnung nach Anspruch 1, d a d u r c h g e k e n n z e i c h n e t, daß die Steuerschaltung (14) ein pulsweiten moduliertes Steu¬ ersignal erzeugt.2. Circuit arrangement according to claim 1, so that the control circuit (14) generates a pulse-width modulated control signal.
3. Schaltungsanordnung nach einem der vorhergehenden Ansprü¬ che, d a d u r c h g e k e n n z e i c h n e t, daß die Steuerschaltung (14) das Steuersignal für den MOSFET (2) derart erzeugt, daß die Gatespannung des Hochspannungs- MOSFET (1) im wesentlichen konstant bleibt.3. Circuit arrangement according to one of the preceding claims, that the control circuit (14) generates the control signal for the MOSFET (2) in such a way that the gate voltage of the high-voltage MOSFET (1) remains essentially constant.
4. Schaltungsanordnung nach einem der vorhergehenden Ansprü¬ che, d a d u r c h g e k e n n z e i c h n e t, daß die Steuerschaltung (14) den Kurzschlußstrom des zweiten MOSFET (2) begrenzt.4. Circuit arrangement according to one of the preceding claims, that the control circuit (14) limits the short-circuit current of the second MOSFET (2).
5. Schaltungsanordnung nach einem der vorhergehenden Ansprü¬ che, d a d u r c h g e k e n n z e i c h n e t, daß die Steuerschaltung (14) eine Temperaturüberwachungs- schaltung zur Überwachung der Temperatur des zweiten MOSFET (2) aufweist.5. Circuit arrangement according to one of the preceding claims, characterized in that the control circuit (14) has a temperature monitoring circuit for monitoring the temperature of the second MOSFET (2).
6. Schaltungsanordnung nach einem der vorhergehenden Ansprü¬ che, d a d u r c h g e k e n n z e i c h n e t, daß die Steuerschaltung (14) eine Überwachungsschaltung zur Begrenzung des di/dt des zweiten MOSFET (2) aufweist.6. Circuit arrangement according to one of the preceding claims, that the control circuit (14) has a monitoring circuit for limiting the di / dt of the second MOSFET (2).
7. Schaltungsanordnung nach einem der vorhergehenden Ansprü¬ che, d a d u r c h g e k e n n z e i c h n e t, daß der zweite MOSFET (2) und die Steuerschaltung (14) mono¬ lithisch integriert sind.7. Circuit arrangement according to one of the preceding claims, so that the second MOSFET (2) and the control circuit (14) are monolithically integrated.
8. Schaltungsanordnung nach einem der Ansprüche 1 bis 6, d a d u r c h g e k e n n z e i c h n e t, daß der zweite MOSFET (2) und die Steuerschaltung (14) in Chipform in einem Gehäuse integriert sind.8. Circuit arrangement according to one of claims 1 to 6, that the second MOSFET (2) and the control circuit (14) are integrated in chip form in a housing.
9. Schaltungsanordnung nach einem der vorhergehenden Ansprü¬ che, d a d u r c h g e k e n n z e i c h n e t, daß die Wärmekapazität des Hochspannungs-MOSFET (1) im Ver¬ hältnis zur Wärmekapazität des zweiten MOSFET (2) in etwa im Verhältnis der Versorgungsspannung zur Ansteuerspannung des Hochspannungs-MOSFET (1) steht. 9. Circuit arrangement according to one of the preceding claims, characterized in that the heat capacity of the high-voltage MOSFET (1) in relation to the heat capacity of the second MOSFET (2) is approximately in the ratio of the supply voltage to the drive voltage of the high-voltage MOSFET (1) stands.
PCT/DE1997/000940 1996-05-17 1997-05-09 Combinational circuit device WO1997044900A1 (en)

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DE19620034.2 1996-05-17
DE19620034A DE19620034C2 (en) 1996-05-17 1996-05-17 Switching power supply

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