DE69306686T2 - CMOS Ausgangstreiberschaltung - Google Patents

CMOS Ausgangstreiberschaltung

Info

Publication number
DE69306686T2
DE69306686T2 DE69306686T DE69306686T DE69306686T2 DE 69306686 T2 DE69306686 T2 DE 69306686T2 DE 69306686 T DE69306686 T DE 69306686T DE 69306686 T DE69306686 T DE 69306686T DE 69306686 T2 DE69306686 T2 DE 69306686T2
Authority
DE
Germany
Prior art keywords
driver circuit
output driver
cmos output
cmos
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69306686T
Other languages
English (en)
Other versions
DE69306686D1 (de
Inventor
Kim C Hardee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UMC Japan Co Ltd
United Memories Inc
Original Assignee
Nippon Steel Semiconductor Corp
United Memories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Semiconductor Corp, United Memories Inc filed Critical Nippon Steel Semiconductor Corp
Application granted granted Critical
Publication of DE69306686D1 publication Critical patent/DE69306686D1/de
Publication of DE69306686T2 publication Critical patent/DE69306686T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
DE69306686T 1992-08-10 1993-01-13 CMOS Ausgangstreiberschaltung Expired - Fee Related DE69306686T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/927,615 US5389842A (en) 1992-08-10 1992-08-10 Latch-up immune CMOS output driver

Publications (2)

Publication Number Publication Date
DE69306686D1 DE69306686D1 (de) 1997-01-30
DE69306686T2 true DE69306686T2 (de) 1997-07-03

Family

ID=25454994

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69306686T Expired - Fee Related DE69306686T2 (de) 1992-08-10 1993-01-13 CMOS Ausgangstreiberschaltung

Country Status (5)

Country Link
US (1) US5389842A (de)
EP (1) EP0582767B1 (de)
JP (1) JP2899858B2 (de)
KR (1) KR100240131B1 (de)
DE (1) DE69306686T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3151329B2 (ja) * 1993-04-07 2001-04-03 株式会社東芝 データ出力回路
KR0124046B1 (ko) * 1993-11-18 1997-11-25 김광호 반도체메모리장치의 승압레벨 감지회로
US6580306B2 (en) * 2001-03-09 2003-06-17 United Memories, Inc. Switching circuit utilizing a high voltage transistor protection technique for integrated circuit devices incorporating dual supply voltage sources
TW495952B (en) * 2001-07-09 2002-07-21 Taiwan Semiconductor Mfg Electrostatic discharge protection device
US6731156B1 (en) 2003-02-07 2004-05-04 United Memories, Inc. High voltage transistor protection technique and switching circuit for integrated circuit devices utilizing multiple power supply voltages
JP4580202B2 (ja) * 2004-09-03 2010-11-10 富士通セミコンダクター株式会社 半導体装置の電圧供給回路
US20060152255A1 (en) * 2005-01-13 2006-07-13 Elite Semiconductor Memory Technology Inc. Gate oxide protected I/O circuit
US8638135B2 (en) * 2011-10-13 2014-01-28 Freescale Semiconductor, Inc. Integrated circuit having latch-up recovery circuit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4039869A (en) * 1975-11-28 1977-08-02 Rca Corporation Protection circuit
US4475050A (en) * 1981-12-21 1984-10-02 Motorola, Inc. TTL To CMOS input buffer
US4584491A (en) * 1984-01-12 1986-04-22 Motorola, Inc. TTL to CMOS input buffer circuit for minimizing power consumption
JPS60201591A (ja) * 1984-03-26 1985-10-12 Hitachi Ltd 半導体集積回路装置
JPH0738583B2 (ja) * 1985-01-26 1995-04-26 株式会社東芝 半導体集積回路
US5057715A (en) * 1988-10-11 1991-10-15 Intel Corporation CMOS output circuit using a low threshold device
US5220221A (en) * 1992-03-06 1993-06-15 Micron Technology, Inc. Sense amplifier pulldown circuit for minimizing ground noise at high power supply voltages

Also Published As

Publication number Publication date
DE69306686D1 (de) 1997-01-30
KR940004833A (ko) 1994-03-16
US5389842A (en) 1995-02-14
EP0582767B1 (de) 1996-12-18
JPH06268511A (ja) 1994-09-22
KR100240131B1 (ko) 2000-01-15
JP2899858B2 (ja) 1999-06-02
EP0582767A1 (de) 1994-02-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee