WO1997019204A1 - Procede et appareil de traitement de surface - Google Patents

Procede et appareil de traitement de surface Download PDF

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Publication number
WO1997019204A1
WO1997019204A1 PCT/JP1996/003434 JP9603434W WO9719204A1 WO 1997019204 A1 WO1997019204 A1 WO 1997019204A1 JP 9603434 W JP9603434 W JP 9603434W WO 9719204 A1 WO9719204 A1 WO 9719204A1
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WO
WIPO (PCT)
Prior art keywords
gas
surface treatment
supply
nitrogen
processing
Prior art date
Application number
PCT/JP1996/003434
Other languages
English (en)
Japanese (ja)
Inventor
Takuya Miyakawa
Shoji Tsutsui
Yoshiaki Mori
Masaki Kato
Yohei Kurashima
Original Assignee
Seiko Epson Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corporation filed Critical Seiko Epson Corporation
Publication of WO1997019204A1 publication Critical patent/WO1997019204A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49586—Insulating layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3489—Composition of fluxes; Methods of application thereof; Other methods of activating the contact surfaces

Definitions

  • the present invention relates to a surface treatment method for modifying a surface of an object to be processed, such as a semiconductor device, a crystal oscillator, a circuit board, or a wire, and a surface treatment method and an apparatus therefor.
  • the direct discharge treatment method in which the object to be processed is exposed to plasma is not preferable because the physical properties of the object to be processed are likely to be destroyed due to plasma damage.
  • the surface of the object to be processed is a metal, strong plasma is generated intensively at the protruding portion, and the entire surface to be processed cannot be uniformly processed.
  • an object of the present invention is to provide a surface treatment method and a device capable of performing a treatment for modifying the surface of an object to be processed in a state where there is no plasma damage, and having a high degree of freedom in an installation place of the object. Is to do.
  • Still another object of the present invention is to provide a surface treatment apparatus capable of performing surface treatment for modifying the surface of an object to be treated with low running cost from gas or liquid which can be obtained at low cost, and a method thereof.
  • the present invention is characterized in that the surface of the object to be treated is treated by bringing a treatment gas containing nitrogen oxide into contact with the surface of the object to be treated.
  • nitrogen oxides can reduce the oxides formed on the surface of the object to be reformed and modify the surface of the object.
  • the nitrogen oxide may replace the oxide formed on the surface of the object with nitrogen oxide combined with a substance forming the surface to modify the surface of the object. it can.
  • N 2 0, N 0, N 0 2 As the process gas containing the nitrogen oxides, N 2 0, N 0, N 0 2 as possible out and the like.
  • the Pb is reduced oxide PbO of the surface of the object.
  • NO is generated, which further contributes to the modification of the surface of the object to be processed.
  • the surface of the object to be processed can be modified by using nitrogen oxides such as N 20 , N 0, and NO 2 as the processing gas.
  • Another process gas containing the nitrogen oxides mention may be made of a gas containing HN0 3, HN_ ⁇ 2, H 2 N 2 0 2 acid and the like.
  • the above-described processing gas may be supplied directly from the cylinder to the object to be processed, or the processing gas may be generated and supplied by any of the following methods.
  • the processing gas can be generated by generating a discharge in an atmosphere in which a supply gas containing oxygen atoms (0) and nitrogen atoms (N) is supplied.
  • the feed gas can Rukoto like for example an oxygen gas 0 2 and nitrogen gas N 2.
  • Other feed gases, to oxygen gas 0 2 and nitrogen gas N 2 can be mentioned those of pure water was added to the water H 2 0 Japanese.
  • other supply gases include, but are not limited to, nitrogen gas N 2 and water H 20 , or compressed air and water H 20 .
  • HN0 3, HN_ ⁇ 2, H 2 N 2 0 2 may also be generated.
  • the peak-to-peak voltage of the discharge voltage can be relatively increased, and the discharge voltage can be stabilized without supplying He or the like which is a plasma generation gas. To generate a discharge. It is not necessary to use He to generate such a stable atmospheric pressure plasma, and the running cost can be reduced.
  • the processing gas can be generated by heating an atmosphere in which a supply gas containing oxygen atoms (0) and nitrogen atoms (N) is supplied.
  • a supply gas containing oxygen atoms (0) and nitrogen atoms (N)
  • N nitrogen atoms
  • the same gas as in the case of discharge decomposition can be adopted.
  • the feed gas is decomposed by thermal energy, N 2 0, N0, NO 2 is produced.
  • the hydrogen atom (H) is present, HN 0 3
  • Many HN0 2, H 2 N 2 0 2 made fresh from increases the processing efficiency.
  • the pair of electrodes for plasma generation has first and second electrodes arranged with a dielectric interposed therebetween, and the first and second electrodes are connected to each other on each surface facing the dielectric. It is preferable that first and second recesses are formed at non-directional positions, and a supply gas is introduced into at least one of the first and second recesses.
  • Still another method of generating the processing gas includes irradiating an atmosphere supplied with a supply gas containing oxygen atoms (0) and nitrogen atoms (N) with light to generate the processing gas. It can.
  • the feed gas of this case be the same as the above case, the feed gas is photolyzed, N 2 0, N0, N0 2 is generated. Again, the hydrogen atom (H) is present, HN 0 3 more than HN0 2, H 2 N 2 0 2 is produced, the process efficiency is increased.
  • oxygen (O 2 ) gas and nitrogen It is preferable to use elemental (N 2 ) gas and to also use nitrogen gas as a carrier gas. Since nitrogen gas is inexpensive, the running cost can be reduced even when used in large quantities as a carrier gas.
  • At least one feed gas may be contacted at the middle supply of that water.
  • the humidity of the processing gas generation atmosphere increases, and there is an advantage that generation of ozone that oxidizes the object to be processed can be suppressed.
  • N 2 O as a processing gas contributes to the modification of the surface of the object to be processed, for example, as in the above-mentioned formula (3).
  • N 20 was generated as a processing gas.
  • N 2 0 as the processing gas can modify the surface of the object to be processed, as in the above formula (2).
  • the absolute amount of oxygen supply amount is supplied that it more than 3% of the oxygen gas is small, because even small amounts of N 2 0 that occur, the processing rate is lowered.
  • the supply amount of oxygen is preferably 15% by volume or less, and more preferably 10% by volume or less. More preferably, the content is set to 5 to 10% by volume, and it has been found that the efficiency of reforming the surface of the object to be treated is superior to the case where the oxygen supply amount is outside this range.
  • the optimal value of the supply amount of oxygen is around 10% by volume at which the generation amount of NO 2 is maximized.
  • Yet another method of generating process gas is to use a salt composed of metal and nitrogen compounds.
  • Yet another method for generating a treatment gas is to contact the Kiyariagasu to any aqueous solution of Kano acid H 2 N 2 0 2, HN 02, HN0 3.
  • the carrier gas contains the above-mentioned acid
  • the surface of the object to be processed can be modified by, for example, any one of the above-described formulas (4) to (6).
  • the method further includes a step of forcibly exhausting the processing gas and the reaction product supplied to the object to be processed, and a step of trapping the processing gas and the reaction product in the middle of the exhaustion.
  • the device of the present invention includes a forced exhaust means and a trap means. As a result, it can be recovered without scattering it to the atmosphere such as nitrogen oxides.
  • catalysts for recovering nitrides and the like, and purifying means for activated carbon and the like can be easily discarded and can reduce running costs.
  • An object to be processed suitable for this type of processing includes a circuit board, an electronic component such as an integrated circuit (IC), a wire to be soldered, or a crystal unit.
  • IC integrated circuit
  • wire to be soldered or a crystal unit.
  • FIG. 1 is a schematic explanatory view showing an embodiment of the present invention in which a processing gas is generated by a discharge decomposition method.
  • FIG. 2 is a schematic explanatory view showing an embodiment of the present invention in which a processing gas is generated by a pyrolysis method.
  • FIG. 3 is a schematic explanatory view showing an embodiment of the present invention in which a processing gas is generated by a photolysis method.
  • FIG. 4 is a schematic explanatory view showing an embodiment of the present invention for generating a processing gas by an electrolysis method.
  • FIG. 5 is a schematic explanatory view showing an embodiment of the present invention in which an aqueous solution of an acid is brought into contact with a carrier gas to generate a processing gas.
  • FIG. 6 is a schematic explanatory view showing an embodiment of the present invention in which a supply gas is brought into contact with water to generate a processing gas.
  • FIG. 7 is a characteristic diagram showing the wettability of solder of a work surface-treated according to the embodiment of the present invention.
  • FIG. 8 is a schematic diagram illustrating measurement of the wettability of the solder in FIG.
  • FIG. 9 is a schematic explanatory view showing the entire configuration of the surface treatment apparatus according to the embodiment of the present invention.
  • FIG. 10 is a schematic explanatory view showing the internal configuration of the surface treatment unit shown in FIG.
  • FIG. 11 is a schematic explanatory view showing the configuration of the plasma generating section shown in FIG.
  • FIG. 12 is a schematic explanatory view showing another first embodiment of the processing gas generator shown in FIG.
  • FIG. 13 is a schematic explanatory view showing another second embodiment of the processing gas generator shown in FIG.
  • FIG. 14 is a schematic explanatory diagram showing another first configuration of the plasma generating unit.
  • FIG. 15 is a schematic explanatory view showing another second configuration of the plasma generating unit.
  • FIG. 16 is a schematic explanatory view showing another first internal configuration of the surface treatment unit shown in FIG.
  • FIG. 17 is a schematic explanatory view showing another second internal configuration of the surface treatment unit shown in FIG.
  • FIG. 18 is a schematic explanatory view showing an embodiment in which a line type processing apparatus is constituted by a surface treatment unit.
  • FIG. 19 is a schematic sectional view showing the air supply / exhaust section of the surface treatment unit shown in FIG.
  • FIG. 20 is a schematic explanatory view showing an embodiment in which a processing apparatus for a stand and a eve is constituted by a surface treatment unit.
  • FIG. 21 is a schematic sectional view showing a supply / exhaust section of the surface treatment unit shown in FIG.
  • FIG. 22 is a schematic explanatory view showing an embodiment in which a rod-type processing apparatus is constituted by a surface treatment unit.
  • FIG. 23 is a schematic sectional view showing a supply / exhaust portion of the surface treatment unit shown in FIG.
  • Fig. 24 shows the construction of a toaster-type processing unit using a surface treatment unit. It is a schematic explanatory view showing an example.
  • FIG. 25 is a schematic sectional view showing a supply / exhaust section of the surface treatment unit shown in FIG.
  • FIG. 26 is a schematic explanatory view showing an embodiment in which a batch processing type processing apparatus is constituted by a surface processing unit.
  • a processing gas containing nitrogen oxides N 20 , N 0, NO H 2 N 2 O 2 , HN 02, HNOs, etc. is brought into contact with the processing object, and the surface of the processing object is modified by this highly reactive processing gas.
  • This highly reactive processing gas may be supplied from the cylinder to the workpiece via the supply pipe, but the processing gas is generated by any of the six methods shown in Figs. 1 to 6. You can also.
  • a common configuration includes a processing gas generation container 1 and a processing gas supply pipe 2 that guides the generated processing gas toward an object to be processed.
  • oxygen atoms (0) and nitrogen atoms (N), which are processing gases, are treated in a processing gas generation vessel 1 to which a processing gas supply pipe 2 and a supply gas supply pipe 3 are connected.
  • the supplied gas is decomposed by the discharge at or near atmospheric pressure to generate the processing gas.
  • a plasma generating section 4 having a pair of electrodes is provided in the processing gas generating container 1.
  • nitrogen gas N 2 was supplied at 5 liters / min as a supply gas.Oxygen gas was supplied at 200 cc / min each, and-the power supply frequency supplied to the pair of electrodes was changed. At about 10 kHz, a discharge was generated at a peak-to-peak discharge voltage of AC 10 kVpp. At this time, in this example, the supply amount of oxygen was approximately 3.85% by volume (100 ⁇ 200/5200), and oxygen and nitrogen were decomposed to generate NO. By supplying this NO to the object as a processing gas, As shown in the above equation (2), the surface of the object to be processed could be modified.
  • the use of a power supply frequency as low as 10 kHz enabled stable discharge without supplying He.
  • the running cost can be reduced.
  • the peak-to-peak voltage of the discharge voltage must be higher than a certain value using a low frequency. According to the experiments of the present inventors, the above-described discharge can be confirmed at each of the AC voltages of DC voltage, 10 kHz, 30 kHz, and 40 kHz, and from the viewpoint of securing a large peak-to-peak voltage of the discharge voltage, 50 kHz An AC or DC voltage with a low frequency below z has been found to be useful.
  • the feed gas such as oxygen gas 0 2 and nitrogen gas N 2 is provided with a heater 5 for heating the process gas generation container 1 to be introduced .
  • the process gas generating vessel 1 and the feed gas is thermally decomposed by thermal energy, that is generating a process gas containing nitrogen oxides N 2 0, N0, N0 2.
  • the same kind of gas as the embodiment of FIG. 1 was supplied at the same flow ratio as the supply gas.
  • the set temperature of the heater 5 was set to 800 ° C.
  • NO was able to be generated as a processing gas, as in the embodiment of FIG.
  • by changing the supply amount of oxygen it is possible to increase the generation amount NO, the or N 2 0 is another nitrogen oxide, N0 2, etc. can also be generated.
  • the supply gases for example, oxygen gas and nitrogen gas are photo-decomposed.
  • a UV lamp 6 for irradiating light for example, ultraviolet light, is provided in the processing gas generation container 1.
  • Oxygen and nitrogen gas were supplied as the supply gas at the same flow ratio as in the embodiment of Figs.
  • the lamp output of the UV lamp 6 is set to 100 mW / cm 2 and the wavelength of the emitted light is set to 400 nm
  • NO is generated as a processing gas as in the embodiment of FIGS. 1 and 2. I was able to. Also in this case, by changing the supply amount of oxygen, the generation amount of N 0 can be increased, or other nitrogen oxides such as N 20 and NO 2 can be generated.
  • a processing gas is generated by electrolyzing an aqueous solution of a salt composed of an alkali metal and a nitrogen compound in a processing gas generation vessel 1 to which a processing gas supply pipe 2 is connected.
  • an aqueous solution of the above-mentioned salt aqueous solution was accommodated in the processing gas generation container 1, and the electrodes 8 a and 8 b were arranged in each area partitioned by the partition plate 7.
  • the electrodes 8 a, 8 b in the example was applied to DC 24 V, and can generate a processing gas containing HN0 3, HN0 2, H 2 N 202.
  • aqueous solution of a salt suitable for electrolysis can be cited NaN0 3, KN0 3 nitrate such as, nitrite, such as N a N0 2, an aqueous solution of the following nitrite such as N a NO.
  • the processing gas supply pipe 2 also serving as a carrier gas supply pipe is a first branch pipe that guides the carrier gas into the processing gas generation vessel 1. 2a, and a second branch pipe 2b for leading out the processing gas generated in the processing gas generating container 1.
  • the carrier gas HN0 3, HN0 2 or is contacted with an aqueous solution of H 2 N 2 0 2 acid to generate a processing gas containing a liquid of the acid.
  • FIG. 6 shows a modification of the embodiment of FIG. And a second gas supply pipe 3b for supplying the other gas, and a container 9 for bringing the other gas into contact with water in the middle of the second gas supply pipe 3b. Obedience Then, the other gas containing water is introduced into the processing gas producing container 1. Result of this, the reaction is mainly caused in the above-mentioned formula (8) (9), HN 0 2 or will contain H 2 N 2 0 2 as a process gas. As a result, the reactions of the above-mentioned formulas (5) and (6) mainly occur, and the surface treatment of the object to be processed can be promoted.
  • FIG. 7 shows the evaluation results.
  • the evaluation value of the wettability of the lead frame is indicated by the value of the buoyancy acting on the lead frame.
  • the value of buoyancy reflecting this wettability is, for example, a value measured by a measuring device schematically shown in FIG.
  • a panel 701 which is an elastic body, is connected to one end of a surface-treated lead frame 12 and the other end of the lead frame 12 is The buoyancy is measured as the tension of the lead frame 12 with respect to the panel 01 when immersed in the solder 703 and lowered.
  • the solder flips the lead frame 12 and the lead frame 12 moves in the direction of arrow a.
  • the tension on the panel 701 becomes a negative value.
  • the lead frame 12 moves in the direction of arrow b. At this time, the tension applied to the spring 701 is a positive value.
  • the processing gas generated in the processing gas generation container 1 of the present invention can maintain the high reactivity of the processing gas until the processing gas is exposed to the object.
  • the active species such as fluorine radicals generated in the plasma generation unit as in the conventional art have their lifetimes interrupted during the exposure to the workpiece disposed outside the plasma generation unit.
  • the present inventors conducted the following experiment.
  • the processing gas supply pipe connected to the plasma generation unit is a 1 / 4-diameter size (6.35 mm in outer diameter and 3.17 mm in inner diameter) that is generally used as a piping tube
  • the supply gas flow rate and tube cross-sectional area From this, I tried to find the flow rate of the processing gas. If the flow rate of the supply gas is 100 cc / min, the flow rate of the processing gas is 21.12 cm / s. Since the lifetime of the fluorine radical is 1/1000 s or less, it can be seen that the fluorine radical disappears at a position 0.012 cm away from the plasma generating part.
  • FIG. 9 is a schematic explanatory view showing the entire configuration of the surface treatment apparatus according to the present embodiment.
  • the work to be soldered is an IC 10
  • the IC 10 is placed on, for example, a conveyor line 14, and is sequentially conveyed in a direction from the back surface to the front surface of the drawing.
  • the lead frame 12 of the IC 10 has been solder-plated in advance. Therefore, although the surface of the lead frame 12 is covered with lead Pb and tin Sn, it is oxidized to lead PbO and tin oxide SnO.
  • the present embodiment reduces the lead oxide PbO and tin oxide SnO formed on the surface of the lead frame 12 to reduce the wettability of the solder of the lead frame 12. To improve the performance.
  • a surface treatment unit 30 and an air supply connection pipe 20 and an exhaust connection pipe 24 connected thereto are provided.
  • the processing gas generated inside the surface treatment unit 30 is introduced into the air supply connection pipe 20, and is processed through the air supply section 22 which spreads on the umbrella above the IC 10.
  • the gas is exposed to the IC 10, especially the lead frame 12.
  • the exhaust connection pipe 24 is for sucking the processing gas exposed to the lead frame 12 and forcibly exhausting the processing gas through the surface processing unit 30.
  • the supply gas from the supply gas generator 600 is supplied to the surface unit 30.
  • the supply gas generation section 600 is provided with a gas output section 6 19, a first gas supply pipe 657, a second gas supply pipe 658, and a steam mixer 659.
  • Oxygen and nitrogen, nitrogen alone, or compressed air are supplied as supply gases from the gas output section 6 19.
  • a first gas supply pipe 657 and a second gas supply pipe 658 composed of two gas supply pipes 658a and 658b are connected to the gas output section 619. .
  • the first gas supply pipe 657 is provided with a valve 662 for ON-OFF the supply gas output and a flowmeter 664 for adjusting the flow rate of the supply gas.
  • the flow rate of nitrogen and oxygen, nitrogen, or compressed air from the gas output section 6 19 is adjusted by a flow meter 664 via a valve 662 of a first gas supply pipe 657.
  • the gas supply pipe 658a is provided with a valve 636 for turning on / off the supply gas output, and the gas supply pipe 658b is supplied with the supply gas.
  • a flow meter 666 for adjusting the gas flow is provided.
  • the gas supplied from the gas output section 6 19 is introduced into the steam mixer 659 via the valve 663 of the gas supply pipe 658a, and is supplied to the steam mixer 659 by water, for example, pure water 6 60 is heated by the heater 661, and is turned into steam.
  • the supply gas introduced into the steam mixer 659 contains steam.
  • the supply gas containing this moisture is introduced into the gas supply pipe 658b, and the flow rate is adjusted by the flow meter 665.
  • a supply gas containing no water is led
  • a supply gas containing water is led.
  • the ratio of the water-free gas supplied to the surface treatment unit 30 to the water supplied gas depends on the ON / OFF of the valve 652 of the first gas supply pipe 657 and The flow rate can be arbitrarily adjusted by adjusting the flow rate of the flow meter 664, turning on / off the valve of the second gas supply pipe 658, and adjusting the flow rate of the flow meter 666.
  • the wettability of the lead frame 12 of the IC 10 can be improved.
  • the surface treatment unit 30 includes a gas supply pipe 40, a power supply 50, a plasma generation section 60, an exhaust pipe 70, and trap means inside one housing 32. It is equipped with a catalyst 80.
  • the gas supply pipe 40 is connected to the upstream and downstream sides of the plasma generation section 60 shown in FIG. 10 respectively, and a flow meter 42 is provided in the middle of the gas supply pipe 40 on the upstream side. It has been.
  • the above-described supply gas is introduced into the gas supply pipe 40 by using equipment in the factory.
  • the downstream end of the gas supply pipe 40 is connected to a supply connection pipe 20 shown in FIG.
  • the plasma generation unit 60 receives power supply from the power supply 50 and generates plasma under atmospheric pressure or a pressure near the atmospheric pressure. As shown in FIG. 11, this plasma generating section 60 is provided with a dielectric, for example, a porous insulator 64 between a pair of electrodes 62 a and 62 b, so that each electrode 6 2a and 62b are arranged facing each other.
  • a power supply 50 is connected to one electrode 62a, the other electrode 62b is grounded, and a relatively low frequency AC voltage or DC voltage of 50 kHz or less is applied between the electrodes. You.
  • the power supply 50 applies a relatively low-frequency AC voltage or DC voltage of 50 kHz or less, preferably 0 to 50 kHz, to the pair of electrodes 62 a and 62 b. It has a plug 52 that plugs into the outlet.
  • the reason why the power supply 50 outputs an AC voltage having a relatively low frequency is as follows.
  • An exhaust pipe 70 for forcibly exhausting the processing gas exposed to the lead frame 12 is provided inside the body 32 of the surface treatment unit 30.
  • the exhaust pipe 70 in the surface treatment unit 30 is connected to an exhaust connection pipe 24 shown in FIG.
  • the exhaust pipe 70 is provided with a purifying means for purifying the processing gas, for example, a catalyst 80.
  • a purifying means for purifying the processing gas for example, a catalyst 80.
  • NO x is present in the processing gas exposed to the object. This NO x contributes to the surface treatment of the lead frame 12 of the IC 10, but NO x that did not contribute to the surface treatment or the reaction products newly generated by the reaction during the treatment are exhausted. .
  • the exhaust gas is brought into contact with the catalyst 80 to chemically purify the processing gas. Moreover, the catalyst can be discarded without special treatment.
  • activated carbon having, for example, an adsorption function
  • exhaust components can be adsorbed on activated carbon.
  • This activated carbon can be incinerated and discarded.
  • the running cost can be reduced as compared with the case where CF 3 is conventionally used as a processing gas and alumina is used as a trapping means.
  • the supply gas is introduced into the gas supply pipes 40 of the surface treatment unit 30 by using the equipment arranged in the factory.
  • the flow rate of this supply gas is adjusted by a flow meter 42 provided in the gas supply pipe 40 in the middle.
  • the supply gas whose flow rate has been adjusted is introduced into the plasma generator 60.
  • a pair of electrodes 62 a and 62 b provided in the plasma generating section 60 have a relatively low frequency of 10 to 50 kHz. An AC voltage having a wave number is applied.
  • the supplied gas is excited and decomposed, and becomes a processing gas containing nitrogen oxides.
  • the processing gas derived from the gas supply pipe 40 of the surface treatment unit 30 is supplied to the IC 10 from the supply section 22 via the supply connection pipe 20 connected to the surface treatment unit 30. Exposure to the surface. Thereby, the lead frame 12 of IC 10 is surface-treated.
  • the processing gas exposed to the lead frame 12 is introduced into the inside of the surface treatment unit 30 via the exhaust connection pipe 24.
  • the above gas is guided to the catalyst 80 via the exhaust pipe 70.
  • the gas supply pipe 658a is provided with a steam mixing pipe as shown in FIG. What is necessary is just to add the structure which contacts the pure water 660 in the vessel 609.
  • the supply gas led to the gas supply pipe 658a in FIG. 12 is led into pure water, and is brought into direct contact with the pure water and then sent out as a gas containing water. In this case, it is expected that the concentration of water in the gas to be sent out can be increased, and efficient surface treatment can be performed.
  • the number of gas supply pipes for guiding the supply gas from the gas output section 6 19 is one, and the supply gas guided from the gas supply pipe 6 58 a via the valve 6 63 is provided. May be passed through pure water.
  • the steam mixer of the processing gas generator shown in FIGS. 9 and 12 can be mounted in the surface treatment unit 30 shown in FIG.
  • Experiment 3 and Experiment 4 are compared.
  • the processing gas of the compressed air containing water used in Experiment 3 generated more ⁇ ⁇ 2— than the processing gas consisting of only the compressed air used in Experiment 4, and the wettability was higher in Experiment 3 Turned out to be good.
  • NO- in the processing gas to be exposed to the workpiece tends to NO 2 by reduction of oxides of the workpiece surface
  • the wettability of the solder the more NO 2 larger amount is improved in the exhaust gas considered Can be That is, the generation of a large amount of NO 2 promotes the reduction of the oxide present on the surface of the lead frame 12, and can enhance the wettability of the lead frame 12.
  • Experiment 1 and Experiment 3 are compared assuming that the same processing gas is used but the electrodes are different.
  • FIG. 14 a schematic configuration of the A type electrode used for the electrode under the plasma condition is shown in FIG. 14, and a schematic configuration of the electrode of the B type is shown in FIG.
  • the A-type electrode in FIG. 14 is a pair of electrodes composed of an electrode 65 a connected to a power source 50 and an electrode 65 b grounded.
  • a dielectric 64 is arranged between the pair of electrodes 65a and 65b.
  • a concave portion 66 penetrating in the front-back direction of the drawing is formed on the surface of the electrode 65a facing the dielectric 64. Atmospheric pressure or pressure near it Under the force, the power supply from the power source 50 causes the supply gas to pass through the concave portion 66, thereby generating a plasma discharge in the concave portion 66.
  • the B-type electrode shown in FIG. 15 has a first electrode 67a and a second electrode 67b arranged with a dielectric 64 interposed therebetween. Unlike the electrodes of FIG. 14, the first and second electrodes 67a, 67b are respectively provided on each surface facing the dielectric 64, with the first and second concave portions 68a, 6 8b is formed. The first and second concave portions 68a and 68b penetrate in the front and back direction of the drawing. Further, the first and second concave portions 68a and 68b are formed at positions not opposed to each other.
  • the B-type electrode shown in Fig. 15 has a smaller stray capacitance between a pair of electrodes, and can use the power consumed by this stray capacitance as power for surface discharge. This is probably because the plasma density increases and the decomposition rate increases.
  • FIG. 9 Another configuration of the surface treatment unit 30 of FIG. 9 will be described with reference to FIGS. 16 and 17.
  • FIG. 16 is a diagrammatic representation of the surface treatment unit 30 of FIG. 9
  • a gas supply pipe 41 is further mounted inside the housing 32. is there. Compressed air from a pump or nitrogen from a cylinder is introduced into the gas supply pipe 41 and supplied to the plasma generation unit 60. On the other hand, steam is supplied from the gas supply pipe 40. O 96 34
  • a gas output unit 6 19 can be mounted in advance in the surface treatment unit 120.
  • the supply gas from the gas generation section 61 9 is led through the gas supply pipe 40, the flow rate is adjusted by the flow meter 42, and supplied to the plasma generation section 60.
  • the line-type surface treatment unit 160 shown in FIGS. 18 and 19 is provided at an upper position facing, for example, a plate-like work 500 conveyed by the conveyor line 14. .
  • the surface treatment unit 160 has a supply / exhaust unit 162 at the lower part of the housing 161.
  • the air supply / exhaust section 16 2 has a double-walled structure composed of an air supply pipe 16 4 and an exhaust pipe 16 6.
  • the air supply pipe 164 is arranged at the center, and the exhaust pipe 166 is arranged around the air supply pipe 166.
  • the lower end of the exhaust pipe 166 has an umbrella-like shape.
  • the work 500 When the work 500 is conveyed intermittently or continuously by the conveyor line 14, the work 500 faces the air supply / exhaust section 162 of the surface treatment unit, and the work 500 The surface will be surface treated. Thus, while the surface treatment unit 160 is fixed, a large number of works 500 can be continuously surface-treated on the entire surface of the work 500.
  • the stand type surface treatment unit 200 shown in FIG. 20 has a housing 201 having a mountable bottom surface.
  • the processing gas is introduced into the casing 201 as described above, and the exhaust gas is exhausted via the catalyst.
  • the housing 201 is provided with an air supply connection pipe 210 and an exhaust connection pipe 230 extending upward.
  • the air supply connection pipe 210 is bent and has an air supply part 220 opened at the lower end.
  • An umbrella-shaped diffusion prevention plate 222 is provided around the air supply section 220 to prevent the diffusion of the processing gas. Have been killed.
  • the exhaust connection pipe 230 has an umbrella-shaped exhaust suction portion 240 whose opening area increases upward as it faces upward.
  • the arranged tip portion 2 52 is arranged at a position immediately below the air supply portion 220.
  • the distal end portion 250 of the wire rod 250 is subjected to the surface treatment with the processing gas derived from the air supply section 220, and the exposed processing gas is discharged to the exhaust suction section 240 and the exhaust connection pipe 2 It will be led to the catalyst in the housing 201 through 30.
  • the stand type surface treatment unit 200 by using the stand type surface treatment unit 200, a local atmosphere of the treatment gas can be created in the air, and the workpiece such as the wire rod 250 can be easily surface treated. Becomes possible.
  • the surface treatment unit 300 itself is constituted by a cylindrical housing 301 such as a soldering iron, for example.
  • the air supply connection pipe 310 and the exhaust connection pipe 320 connected to the housing 301 have a double pipe structure, and the processing gas is processed by the inside air supply connection pipe 310.
  • the exposed processing gas is led out toward the inside of the housing 301 from the exhaust connection pipe 320 on the outside.
  • the distal end of the exhaust connection pipe 320 has an umbrella-like shape as shown in FIGS.
  • the surface treatment unit 300 itself is configured in a rod shape, it becomes possible to perform surface treatment of various works by manually operating the surface treatment unit 300 itself.
  • the surface treatment unit 400 shown in FIGS. 24 and 25 has a slit-shaped insertion portion 4 on one surface of the housing 401, for example, on the upper surface thereof, into which a plate-shaped work 500 can be inserted. It has ten.
  • An exhaust pipe 420 is connected to the slit-shaped insertion section 410.
  • a processing gas supply pipe 430 having one end opened at the side wall is provided. According to this configuration, by inserting the plate-shaped work 500 into the slit-shaped insertion portion 410 provided on the upper surface of the housing 401, both sides of the work 500 can be inserted.
  • the processing gas is sprayed more, so that both surfaces of the plate-like workpiece 500 can be simultaneously subjected to the surface treatment.
  • the processing gas supply pipe 430 may be opened only on one side wall of the slit-shaped insertion portion 410.
  • FIG. 26 shows an apparatus for processing a large number of workpieces in a batch system.
  • This device connects the air supply pipe 20 and the exhaust pipe 24 connected to the above-mentioned surface treatment unit 30 (or 110 or 120) to a batch processing box 450. ing.
  • the batch processing box 450 accommodates a large number of works 510 therein.
  • the workpieces 50 to be batch-processed may be, for example, a TAB tape wound in a roll, in addition to the above-mentioned IC 10, wire rod 250, and plate-shaped workpiece 500.
  • this batch processing type it is possible to perform surface treatment on a large number of works 5 10 at a time.
  • the work surface-treated by the treatment method of the present invention can maintain the improved wettability of the solder for a relatively long time after the surface treatment, the work is stored until the soldering after the batch processing. Also, good soldering can be performed.

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  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Avec ce procédé et cet appareil de traitement de surface, on expose un article à un gaz activé contenant de l'azote et de l'eau, à la pression atmosphérique, pour en modifier la surface. Afin d'améliorer la mouillabilité d'une grille de connexion (12), de l'oxygène provenant d'une alimentation (619) en gaz est envoyé à un générateur de plasma d'un module (30) de traitement de surface par une première conduite (657). De l'azote passe de l'alimentation (619) en gaz dans un conteneur (659) d'eau pure (660) par l'intermédiaire d'une deuxième conduite (658), et l'azote humide est alors introduit dans le générateur de plasma du module (30) de traitement de surface. Le gaz amené à ce générateur est excité et décomposé pour une électrode à laquelle on applique un tension c.c., on une tension C.A. dont la fréquence ne dépasse pas 50 KHz, ce qui produit un plasma contenant des oxydes d'azote. Un circuit intégré (10), exposé à ce plasma, subit un traitement de surface concernant sa grille de connexion (12). Des oxydes présents à la surface de cette grille de connexion subissent une réduction ou sont remplacés par des oxydes d'azote, ce qui modifie la surface de la grille de connexion (12).
PCT/JP1996/003434 1995-11-07 1996-11-22 Procede et appareil de traitement de surface WO1997019204A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP32814595 1995-11-07
JP7/328145 1995-11-22
JP8/103576 1996-03-29
JP10357696 1996-03-29

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WO1997019204A1 true WO1997019204A1 (fr) 1997-05-29

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268129A (ja) * 2004-03-19 2005-09-29 Research Institute Of Innovative Technology For The Earth プラズマ反応器
JP2005302525A (ja) * 2004-04-12 2005-10-27 Sekisui Chem Co Ltd 放電プラズマ処理装置及びその処理方法
JP2007075778A (ja) * 2005-09-16 2007-03-29 Research Institute Of Innovative Technology For The Earth プラズマ放電発生方法
JP2015201553A (ja) * 2014-04-09 2015-11-12 有限会社ヨコタテクニカ フロー半田付け装置
JP2015201554A (ja) * 2014-04-09 2015-11-12 有限会社ヨコタテクニカ 半田付け方法
CN110691655A (zh) * 2017-05-17 2020-01-14 Ejot两合公司 非接触式清洁装置
KR102301223B1 (ko) * 2020-11-25 2021-09-09 박현배 대기압 플라즈마를 이용한 와이어 본딩 결합 구조체의 제조방법
KR102301221B1 (ko) * 2020-11-25 2021-09-09 박현배 대기압 플라즈마 처리로 도금성이 향상된 인쇄회로기판의 제조방법 및 이에 의해 제조된 인쇄회로기판
KR102301222B1 (ko) * 2020-11-27 2021-09-09 박현배 대기압 플라즈마를 이용한 인쇄회로기판의 제조방법

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JPH01205085A (ja) * 1988-02-12 1989-08-17 Mazda Motor Corp 金属の清浄化方法
JPH02190489A (ja) * 1988-11-30 1990-07-26 Plessey Overseas Plc 金属表面の清浄化方法
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JPH0688242A (ja) * 1992-09-04 1994-03-29 Jun Nishiwaki 大気圧プラズマによる金属の表面処理法
WO1994022628A1 (fr) * 1993-04-05 1994-10-13 Seiko Epson Corporation Procede et appareil d'assemblage par brasage
JPH07268669A (ja) * 1994-03-30 1995-10-17 Shinko Pantec Co Ltd ステンレス鋼の表面処理方法

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Publication number Priority date Publication date Assignee Title
JPH01205085A (ja) * 1988-02-12 1989-08-17 Mazda Motor Corp 金属の清浄化方法
JPH02190489A (ja) * 1988-11-30 1990-07-26 Plessey Overseas Plc 金属表面の清浄化方法
JPH04127528A (ja) * 1990-09-19 1992-04-28 Hitachi Ltd エッチング方法
JPH05182945A (ja) * 1991-12-27 1993-07-23 Hitachi Ltd 洗浄装置
JPH0688242A (ja) * 1992-09-04 1994-03-29 Jun Nishiwaki 大気圧プラズマによる金属の表面処理法
WO1994022628A1 (fr) * 1993-04-05 1994-10-13 Seiko Epson Corporation Procede et appareil d'assemblage par brasage
JPH07268669A (ja) * 1994-03-30 1995-10-17 Shinko Pantec Co Ltd ステンレス鋼の表面処理方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268129A (ja) * 2004-03-19 2005-09-29 Research Institute Of Innovative Technology For The Earth プラズマ反応器
JP4546123B2 (ja) * 2004-03-19 2010-09-15 財団法人地球環境産業技術研究機構 プラズマ反応器
JP2005302525A (ja) * 2004-04-12 2005-10-27 Sekisui Chem Co Ltd 放電プラズマ処理装置及びその処理方法
JP4504723B2 (ja) * 2004-04-12 2010-07-14 積水化学工業株式会社 放電プラズマ処理装置及び放電プラズマ処理方法
JP2007075778A (ja) * 2005-09-16 2007-03-29 Research Institute Of Innovative Technology For The Earth プラズマ放電発生方法
JP2015201553A (ja) * 2014-04-09 2015-11-12 有限会社ヨコタテクニカ フロー半田付け装置
JP2015201554A (ja) * 2014-04-09 2015-11-12 有限会社ヨコタテクニカ 半田付け方法
CN110691655A (zh) * 2017-05-17 2020-01-14 Ejot两合公司 非接触式清洁装置
CN110691655B (zh) * 2017-05-17 2022-03-11 Ejot两合公司 非接触式清洁装置
KR102301223B1 (ko) * 2020-11-25 2021-09-09 박현배 대기압 플라즈마를 이용한 와이어 본딩 결합 구조체의 제조방법
KR102301221B1 (ko) * 2020-11-25 2021-09-09 박현배 대기압 플라즈마 처리로 도금성이 향상된 인쇄회로기판의 제조방법 및 이에 의해 제조된 인쇄회로기판
KR102301222B1 (ko) * 2020-11-27 2021-09-09 박현배 대기압 플라즈마를 이용한 인쇄회로기판의 제조방법

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