WO1995016277A1 - Procede de nettoyage de surface et agent nettoyant de surface pour substrat - Google Patents

Procede de nettoyage de surface et agent nettoyant de surface pour substrat Download PDF

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Publication number
WO1995016277A1
WO1995016277A1 PCT/JP1994/002073 JP9402073W WO9516277A1 WO 1995016277 A1 WO1995016277 A1 WO 1995016277A1 JP 9402073 W JP9402073 W JP 9402073W WO 9516277 A1 WO9516277 A1 WO 9516277A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
cleaning
oxidation
water
cleaning agent
Prior art date
Application number
PCT/JP1994/002073
Other languages
English (en)
Japanese (ja)
Inventor
Tadahiro Ohmi
Hitoshi Morinaga
Original Assignee
Tadahiro Ohmi
Hitoshi Morinaga
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tadahiro Ohmi, Hitoshi Morinaga filed Critical Tadahiro Ohmi
Publication of WO1995016277A1 publication Critical patent/WO1995016277A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

Definitions

  • the requirements for substrate surface cleaning are becoming increasingly demanding.
  • metal impurities in particular degrade the electrical characteristics of the semiconductor element, and in order to prevent such deterioration, the semiconductor element must be formed. It is necessary to minimize the concentration of metal impurities on the surface of the substrate to be formed. Therefore, the substrate surface is generally cleaned with a cleaning agent.
  • a method of adding a chelating agent such as ethylenediaminetetraacetic acid to a surface cleaning agent Japanese Patent Publication No. 3822530
  • a method of adding a water-soluble organic sulfonic acid proposes that the organic additives have a problem that they themselves become a source of contamination of the substrate.
  • the organic additives have a problem that they themselves become a source of contamination of the substrate.
  • it is a technology to prevent reverse adhesion it is actually effective only when the amount of metal impurities is extremely small (ppt level). Therefore, control the metal impurities in the cleaning agent to an extremely low concentration. Therefore, there is a problem that strict management must be performed during the production or use of the cleaning agent, and there is also a problem that the life is short.
  • the metal ion M n + such as Cu which has a high oxidation-reduction potential E (V) with respect to the hydrogen standard electrode (NHE), receives electrons e- from the silicon substrate by the following reaction, and is very easily attached to the substrate surface. I found something wrong.
  • the redox potential of the aqueous solution should be higher than the redox potential of the impurity metal to be removed. It is only necessary to control the potential. Since Cu greatly contributes to the deterioration of the characteristics of the semiconductor element, the deterioration of the characteristics of the semiconductor element can be largely prevented by setting the oxidation-reduction potential of the aqueous solution to 0.6 V or more. Becomes Example of embodiment
  • the method for setting the oxidation-reduction potential of the aqueous solution to be equal to or higher than the oxidation-reduction potential of the metal impurity is not particularly limited, but a water-soluble oxidizing agent is generally preferable. Used for
  • water-soluble oxidizing agent ozone, sulfuric acid, hydrochloric acid, nitric acid, and nitrate are preferable because a small amount can provide a high effect.
  • various known additives such as alkalis, water-soluble alcohols, and surfactants may be added depending on the type of the substrate and the object to be cleaned.
  • ultrapure water having the characteristics shown in FIG. 2 is preferably used, but is not limited thereto.
  • one of the advantages of the present invention is that it is not essential to strictly control the content of metal impurities in ultrapure water.
  • the surface cleaning agent of the present invention is used for cleaning metals, ceramics, plastics, magnetic materials, superconductors, and the like, but is suitable for cleaning semiconductor substrates because a highly clean substrate surface can be obtained. It has a remarkable effect on silicon especially among semiconductors.
  • FIG. 1 is a graph showing the relationship between the oxidation-reduction potential and the attached amount for explaining the operation of the present invention.
  • a water-soluble oxidizing agent was added to ultrapure water at the ratio shown in Table 1 and mixed to prepare a surface cleaning agent.
  • the oxidation-reduction potential of the surface cleaning agent was measured using a metal electrode for redox potential measurement (model: 6861-10C) manufactured by HORIBA, Ltd.
  • N-type 100 single-crystal substrate was immersed for 3 minutes, rinsed with ultrapure water for 10 minutes, dried by blowing nitrogen gas, and dried to remove metal impurities on the substrate surface.
  • Hydrofluoric acid, ammonium fluoride, and a water-soluble oxidizing agent were added to ultrapure water as shown in Table 2 and mixed to prepare a surface cleaning agent.
  • the oxidation-reduction potential of the surface cleaning agent was measured in the same manner as in Example 1.
  • the surface cleaning agent of the present invention By using the surface cleaning agent of the present invention, even if the cleaning agent is contaminated with metal impurities, it is possible to prevent the metal impurities from adhering to the substrate (reverse contamination), so that a stable and extremely clean substrate surface can be obtained. Can be formed.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

La présente invention concerne un procédé de nettoyage de surface et de préservation constante des surfaces d'un substrat en état de très grande propreté par agent nettoyant bloquant toute rétrocontamination imputable à la redéposition des impuretés métalliques dudit agent nettoyant sur le substrat. Le procédé de nettoyage de surface du substrat se caractérise par un potentiel d'oxydoréduction d'une solution aqueuse (par rapport à une électrode de référence à hydrogène) maintenu à un niveau supérieur au potentiel d'oxydoréduction des impuretés métalliques à éliminer. Le potentiel d'oxydoréduction de la solution aqueuse est fixé de préférence à 0,6 V.
PCT/JP1994/002073 1993-12-10 1994-12-09 Procede de nettoyage de surface et agent nettoyant de surface pour substrat WO1995016277A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31091093A JP3751324B2 (ja) 1993-12-10 1993-12-10 基体の表面洗浄方法及び表面洗浄剤
JP5/310910 1993-12-10

Publications (1)

Publication Number Publication Date
WO1995016277A1 true WO1995016277A1 (fr) 1995-06-15

Family

ID=18010865

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1994/002073 WO1995016277A1 (fr) 1993-12-10 1994-12-09 Procede de nettoyage de surface et agent nettoyant de surface pour substrat

Country Status (2)

Country Link
JP (1) JP3751324B2 (fr)
WO (1) WO1995016277A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115916384A (zh) * 2020-06-02 2023-04-04 栗田工业株式会社 分离膜的清洗方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6348157B1 (en) 1997-06-13 2002-02-19 Tadahiro Ohmi Cleaning method
JP4135780B2 (ja) * 1997-08-29 2008-08-20 ユーシーティー株式会社 薬液定量注入装置および方法
US6503464B1 (en) 1999-08-12 2003-01-07 Sipec Corporation Ultraviolet processing apparatus and ultraviolet processing method
US6630031B1 (en) * 1999-08-12 2003-10-07 Sipec Corporation Surface purification apparatus and surface purification method
TWI275436B (en) 2002-01-31 2007-03-11 Ebara Corp Electrochemical machining device, and substrate processing apparatus and method
CN101848987A (zh) * 2007-09-14 2010-09-29 三洋化成工业株式会社 电子材料用清洁剂
EP3174087A4 (fr) * 2014-07-22 2018-03-14 Sumitomo Electric Industries, Ltd. Procédé de nettoyage de semiconducteur composé et solution de nettoyage de semiconducteur composé

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60106586A (ja) * 1983-11-15 1985-06-12 Asahi Glass Co Ltd 水銀含有排水の処理方法
JPH03120719A (ja) * 1989-10-03 1991-05-22 Nec Corp 半導体基板の処理液及び処理方法
JPH03132030A (ja) * 1989-10-18 1991-06-05 Fujitsu Ltd シリコンウエハの洗浄方法
JPH03218629A (ja) * 1989-11-22 1991-09-26 Fujitsu Ltd 半導体装置の製造方法
JPH03228328A (ja) * 1990-02-02 1991-10-09 Nec Corp 半導体基板の水洗方法
JPH03228327A (ja) * 1990-02-02 1991-10-09 Nec Corp 半導体ウェーハの洗浄方法
JPH04501139A (ja) * 1989-07-26 1992-02-27 ユージヌ，アシエ　ドゥ　シャティヨン　エ　グニョン チタンまたはチタンと化学的に類似な元素を少なくとも１つ含む金属製品の酸洗浴を用いた酸洗方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60106586A (ja) * 1983-11-15 1985-06-12 Asahi Glass Co Ltd 水銀含有排水の処理方法
JPH04501139A (ja) * 1989-07-26 1992-02-27 ユージヌ，アシエ　ドゥ　シャティヨン　エ　グニョン チタンまたはチタンと化学的に類似な元素を少なくとも１つ含む金属製品の酸洗浴を用いた酸洗方法
JPH03120719A (ja) * 1989-10-03 1991-05-22 Nec Corp 半導体基板の処理液及び処理方法
JPH03132030A (ja) * 1989-10-18 1991-06-05 Fujitsu Ltd シリコンウエハの洗浄方法
JPH03218629A (ja) * 1989-11-22 1991-09-26 Fujitsu Ltd 半導体装置の製造方法
JPH03228328A (ja) * 1990-02-02 1991-10-09 Nec Corp 半導体基板の水洗方法
JPH03228327A (ja) * 1990-02-02 1991-10-09 Nec Corp 半導体ウェーハの洗浄方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115916384A (zh) * 2020-06-02 2023-04-04 栗田工业株式会社 分离膜的清洗方法
CN115916384B (zh) * 2020-06-02 2024-03-19 栗田工业株式会社 分离膜的清洗方法

Also Published As

Publication number Publication date
JP3751324B2 (ja) 2006-03-01
JPH07161672A (ja) 1995-06-23

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