WO1993004406A1 - Double-layer resist and method of and device for making said resist - Google Patents

Double-layer resist and method of and device for making said resist Download PDF

Info

Publication number
WO1993004406A1
WO1993004406A1 PCT/JP1992/001031 JP9201031W WO9304406A1 WO 1993004406 A1 WO1993004406 A1 WO 1993004406A1 JP 9201031 W JP9201031 W JP 9201031W WO 9304406 A1 WO9304406 A1 WO 9304406A1
Authority
WO
WIPO (PCT)
Prior art keywords
resist
double
making
layer
layer resist
Prior art date
Application number
PCT/JP1992/001031
Other languages
English (en)
French (fr)
Inventor
Jun Tsukamoto
Chikara Ichijo
Emi Imazu
Original Assignee
Toray Industries, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries, Inc. filed Critical Toray Industries, Inc.
Priority to KR1019930701111A priority Critical patent/KR930702702A/ko
Priority to DE69223233T priority patent/DE69223233T2/de
Priority to EP92917862A priority patent/EP0552382B1/en
Publication of WO1993004406A1 publication Critical patent/WO1993004406A1/ja

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/093—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antistatic means, e.g. for charge depletion
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Polymerisation Methods In General (AREA)
PCT/JP1992/001031 1991-08-13 1992-08-12 Double-layer resist and method of and device for making said resist WO1993004406A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019930701111A KR930702702A (ko) 1991-08-13 1992-08-12 2층구조레지스트의 제조방법 및 제조장치
DE69223233T DE69223233T2 (de) 1991-08-13 1992-08-12 Zweilagenphotoresiststruktur und verfahren zu ihrer herstellung
EP92917862A EP0552382B1 (en) 1991-08-13 1992-08-12 A two layer structureresist and a process for producing it

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3202686A JP3019506B2 (ja) 1991-08-13 1991-08-13 二層構造感放射線性レジストおよびその製造方法
JP3/202686 1991-08-13

Publications (1)

Publication Number Publication Date
WO1993004406A1 true WO1993004406A1 (en) 1993-03-04

Family

ID=16461478

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1992/001031 WO1993004406A1 (en) 1991-08-13 1992-08-12 Double-layer resist and method of and device for making said resist

Country Status (5)

Country Link
EP (1) EP0552382B1 (ja)
JP (1) JP3019506B2 (ja)
KR (1) KR930702702A (ja)
DE (1) DE69223233T2 (ja)
WO (1) WO1993004406A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0773479A1 (en) * 1995-11-13 1997-05-14 Motorola, Inc. Method of polymer conversion and patterning of a PPV derivative
EP1007349B1 (en) * 1995-11-22 2004-09-29 THE GOVERNMENT OF THE UNITED STATES OF AMERICA, as represented by THE SECRETARY OF THE NAVY Patterned conducting polymer surfaces and process for preparing the same and devices containing the same
CN1934500B (zh) 2004-03-16 2013-03-13 日产化学工业株式会社 含有硫原子的防反射膜
JP4507759B2 (ja) * 2004-08-18 2010-07-21 株式会社リコー 有機材料のパターン形成方法
US7375172B2 (en) * 2005-07-06 2008-05-20 International Business Machines Corporation Underlayer compositions containing heterocyclic aromatic structures
WO2008114411A1 (ja) * 2007-03-20 2008-09-25 Fujitsu Limited 導電性反射防止膜形成用材料、導電性反射防止膜の形成方法、レジストパターン形成方法、半導体装置、及び磁気ヘッド

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5642229A (en) * 1979-06-25 1981-04-20 University Patents Inc New photooresist composition
JPS5866938A (ja) * 1981-10-19 1983-04-21 Hitachi Ltd 遠紫外光感応材料被膜の形成方法
JPS6113245A (ja) * 1984-06-11 1986-01-21 マイクロサイ，インコーポレイテッド スピンキヤスタブルレジスト組成物およびその使用方法
JPS62108244A (ja) * 1985-11-06 1987-05-19 Nippon Telegr & Teleph Corp <Ntt> ２層用ポジ型感光性組成物及びパタ−ン形成方法
JPS63155044A (ja) * 1986-12-19 1988-06-28 Fujitsu Ltd レジストパタ−ン形成方法
JPS6444927A (en) * 1987-08-13 1989-02-17 Oki Electric Ind Co Ltd Resist pattern forming method
JPH027053A (ja) * 1988-03-02 1990-01-11 Hewlett Packard Co <Hp> フォトレジストシステムおよびフォトエッチング方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0075454B1 (en) * 1981-09-18 1987-11-25 Fujitsu Limited Semiconductor device having new conductive interconnection structure and method for manufacturing the same
US4617252A (en) * 1983-07-01 1986-10-14 Philip A. Hunt Chemical Corporation Antireflective coatings for use in the manufacture of semi-conductor devices, methods and solutions for making such coatings, and the method for using such coatings to absorb light in ultraviolet photolithography processes
JPS61231011A (ja) * 1985-04-08 1986-10-15 Agency Of Ind Science & Technol アセチレン誘導体を原料とする重合体の製造方法
JPH02103547A (ja) * 1988-10-13 1990-04-16 Fujitsu Ltd 導電性層の形成方法
JPH03261953A (ja) * 1990-03-13 1991-11-21 Fujitsu Ltd 微細パターンの形成方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5642229A (en) * 1979-06-25 1981-04-20 University Patents Inc New photooresist composition
JPS5866938A (ja) * 1981-10-19 1983-04-21 Hitachi Ltd 遠紫外光感応材料被膜の形成方法
JPS6113245A (ja) * 1984-06-11 1986-01-21 マイクロサイ，インコーポレイテッド スピンキヤスタブルレジスト組成物およびその使用方法
JPS62108244A (ja) * 1985-11-06 1987-05-19 Nippon Telegr & Teleph Corp <Ntt> ２層用ポジ型感光性組成物及びパタ−ン形成方法
JPS63155044A (ja) * 1986-12-19 1988-06-28 Fujitsu Ltd レジストパタ−ン形成方法
JPS6444927A (en) * 1987-08-13 1989-02-17 Oki Electric Ind Co Ltd Resist pattern forming method
JPH027053A (ja) * 1988-03-02 1990-01-11 Hewlett Packard Co <Hp> フォトレジストシステムおよびフォトエッチング方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP0552382A4 *

Also Published As

Publication number Publication date
DE69223233D1 (de) 1998-01-02
DE69223233T2 (de) 1998-04-16
EP0552382B1 (en) 1997-11-19
EP0552382A1 (en) 1993-07-28
JPH0545873A (ja) 1993-02-26
JP3019506B2 (ja) 2000-03-13
KR930702702A (ko) 1993-09-09
EP0552382A4 (en) 1993-10-20

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