DE69223233D1 - Zweilagenphotoresiststruktur und verfahren zu ihrer herstellung - Google Patents

Zweilagenphotoresiststruktur und verfahren zu ihrer herstellung

Info

Publication number
DE69223233D1
DE69223233D1 DE69223233T DE69223233T DE69223233D1 DE 69223233 D1 DE69223233 D1 DE 69223233D1 DE 69223233 T DE69223233 T DE 69223233T DE 69223233 T DE69223233 T DE 69223233T DE 69223233 D1 DE69223233 D1 DE 69223233D1
Authority
DE
Germany
Prior art keywords
production
layer photoresist
photoresist structure
layer
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69223233T
Other languages
English (en)
Other versions
DE69223233T2 (de
Inventor
Jun Tsukamoto
Chikara Ichijo
Emi Imazu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toray Industries Inc
Original Assignee
Toray Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries Inc filed Critical Toray Industries Inc
Publication of DE69223233D1 publication Critical patent/DE69223233D1/de
Application granted granted Critical
Publication of DE69223233T2 publication Critical patent/DE69223233T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/093—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antistatic means, e.g. for charge depletion
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Polymerisation Methods In General (AREA)
DE69223233T 1991-08-13 1992-08-12 Zweilagenphotoresiststruktur und verfahren zu ihrer herstellung Expired - Fee Related DE69223233T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3202686A JP3019506B2 (ja) 1991-08-13 1991-08-13 二層構造感放射線性レジストおよびその製造方法
PCT/JP1992/001031 WO1993004406A1 (en) 1991-08-13 1992-08-12 Double-layer resist and method of and device for making said resist

Publications (2)

Publication Number Publication Date
DE69223233D1 true DE69223233D1 (de) 1998-01-02
DE69223233T2 DE69223233T2 (de) 1998-04-16

Family

ID=16461478

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223233T Expired - Fee Related DE69223233T2 (de) 1991-08-13 1992-08-12 Zweilagenphotoresiststruktur und verfahren zu ihrer herstellung

Country Status (5)

Country Link
EP (1) EP0552382B1 (de)
JP (1) JP3019506B2 (de)
KR (1) KR930702702A (de)
DE (1) DE69223233T2 (de)
WO (1) WO1993004406A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0773479A1 (de) * 1995-11-13 1997-05-14 Motorola, Inc. Verfahren zur Umwandlung von Polymeren und Strukturierung von einem PPV-Derivat
EP1007349B1 (de) * 1995-11-22 2004-09-29 THE GOVERNMENT OF THE UNITED STATES OF AMERICA, as represented by THE SECRETARY OF THE NAVY Leitende gemusterte polymeroberfläche, verfahren zu ihrer herstellung und diese enthaltende anordnungen
CN1934500B (zh) 2004-03-16 2013-03-13 日产化学工业株式会社 含有硫原子的防反射膜
JP4507759B2 (ja) * 2004-08-18 2010-07-21 株式会社リコー 有機材料のパターン形成方法
US7375172B2 (en) * 2005-07-06 2008-05-20 International Business Machines Corporation Underlayer compositions containing heterocyclic aromatic structures
WO2008114411A1 (ja) * 2007-03-20 2008-09-25 Fujitsu Limited 導電性反射防止膜形成用材料、導電性反射防止膜の形成方法、レジストパターン形成方法、半導体装置、及び磁気ヘッド

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643220A (en) * 1979-06-25 1981-04-21 University Patents Inc Method of using novel nonlinear optical substance and diacetylenes
EP0075454B1 (de) * 1981-09-18 1987-11-25 Fujitsu Limited Halbleiteranordnung mit leitender Verbindungsstruktur und Verfahren zum Herstellen derselben
JPS5866938A (ja) * 1981-10-19 1983-04-21 Hitachi Ltd 遠紫外光感応材料被膜の形成方法
US4617252A (en) * 1983-07-01 1986-10-14 Philip A. Hunt Chemical Corporation Antireflective coatings for use in the manufacture of semi-conductor devices, methods and solutions for making such coatings, and the method for using such coatings to absorb light in ultraviolet photolithography processes
US4535053A (en) * 1984-06-11 1985-08-13 General Electric Company Multilayer photoresist process utilizing cinnamic acid derivatives as absorbant dyes
JPS61231011A (ja) * 1985-04-08 1986-10-15 Agency Of Ind Science & Technol アセチレン誘導体を原料とする重合体の製造方法
JPS62108244A (ja) * 1985-11-06 1987-05-19 Nippon Telegr & Teleph Corp <Ntt> ２層用ポジ型感光性組成物及びパタ−ン形成方法
JPS63155044A (ja) * 1986-12-19 1988-06-28 Fujitsu Ltd レジストパタ−ン形成方法
JPS6444927A (en) * 1987-08-13 1989-02-17 Oki Electric Ind Co Ltd Resist pattern forming method
EP0331494A3 (de) * 1988-03-02 1990-11-07 Hewlett-Packard Company Photolackverfahren
JPH02103547A (ja) * 1988-10-13 1990-04-16 Fujitsu Ltd 導電性層の形成方法
JPH03261953A (ja) * 1990-03-13 1991-11-21 Fujitsu Ltd 微細パターンの形成方法

Also Published As

Publication number Publication date
DE69223233T2 (de) 1998-04-16
EP0552382B1 (de) 1997-11-19
EP0552382A1 (de) 1993-07-28
WO1993004406A1 (en) 1993-03-04
JPH0545873A (ja) 1993-02-26
JP3019506B2 (ja) 2000-03-13
KR930702702A (ko) 1993-09-09
EP0552382A4 (en) 1993-10-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee