Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02612—Formation types
  • H01L21/02617—Deposition types
  • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
  • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
  • C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/02521—Materials
  • H01L21/02551—Group 12/16 materials
  • H01L21/02557—Sulfides
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/0257—Doping during depositing
  • H01L21/02573—Conductivity type
  • H01L21/02581—Transition metal or rare earth elements

Definitions

• the invention is directed to doping of zinc sulfide thi films with manganese. More precisely, the invention con cerns a method for doping manganese evenly into a zinc sulfide thin film, according to which method a manganes compound which is suitable for the formation of mangane sulfide and has the formula MnX 2 , wherein X is chlorine bromine or any other suitable atom or group, is fed int doping chamber.
• ALE Atomic Lay Epitaxy
• CV Chemical Vapour Deposition
• the ALE-method which is known as a suitable method of manufacture of zinc sulfide thin films, is relatively n and so far in only limited industrial use.
• the better known CVD-methods have not so far been applied on an in dustrial scale to deposit zinc sulfide thin films, but they are only under scientific research.
• there not a single commonly known solution relating to mangan doping which is necessary in order to obtain a satisfac rily working thin film.
• the desired manganese concentration in a zinc sulfide thin film is appr. 0.7 - 0.9 at-%, opt mally appr. 0.8-at %.
• the ratio of the partial pressures of the zinc compound and the manganese compound is about 300-3000 at a temperature of about 500 30°C.
• the ratio of the partial pressures is specifically about 1000 at said temperature.
• the manganese concentra ⁇ tions which above were considered beneficial, are reache especially a manganese concentration of appr. 0.8. at-%, the thin film.
• the manganese com ⁇ pound is manganese chloride, whereby zinc chloride is used as the zinc compound for evening the doping of the manga ⁇ nese compound. This mode of operation is from the view ⁇ point of equipment technology particularly beneficial also for the reason that zinc chloride is most commonly used for the deposition of the zinc sulfide films.
• X means the same as previously. It is assumed that for example by using the ALE-method, one has first depo ⁇ sited pure zinc sulfide ZnS(s) on the substrate. When one then feeds into the doping chamber, under equal temperatu ⁇ re and other conditions, along with a carrier gas a manga ⁇ nese compound MnX 2 , this reacts with the previously depo ⁇ sited zinc sulfide forming manganese sulfide, and the for ⁇ med zinc compound ZnX 2 is released as vapour under the conditions used.
• the equation (1) When applied to a system considered as beneficial and wherein the manganese compound is manganese chloride and the zinc compound is zinc chloride, the equation (1) has the following form
• pure zinc sulfide layers are first uniformly deposited on the substrates, after which the manganese doping is carried out.
• manganese doping ca be integrated with the deposition of the zinc sulfide laye itself, whereby the manganese compound, especially mangane chloride, is pulsed simultaneously with the zinc compound (zinc chloride) used for the deposition of the thin film a the ratio of the partial pressures of the zinc compound an the manganese compound is adjusted accordingly, as stated previously.
• the zinc compound used for the evening of manganes doping is the same as that used for the deposition of the zinc sulfide thin film, i.e. most commonly zinc chloride.
• the required feeding amount or time of the manganese and zinc compound for the doping of a specific manganese con ⁇ centration is in each case ultimately determined experi ⁇ mentally according to the used doping equipment and pro ⁇ cess conditions, and according to the substrate area to be doped, taking into account to what extent the zinc sulfide thin film to be doped already of old contains manganese, and how this manganese is distributed.
• the aforemention deposition of pure zinc sulfide and its doping is repeate 20 times in order to reach the required total thickness.
• the ALE-method to combine the procedure of the example as part of the hydrogen sulfide-zinc chloride pulsing used the deposition of the thin film, whereby a small but from the viewpoint of evening the manganese concentration in ⁇ significant part of the fed zinc chloride is consumed for the deposition of the zinc sulfide itself.
• a sufficient dura ⁇ tion of the zinc chloride-manganese chloride pulse of the aforementioned partial pressure ratio is 0.6 seconds.
• the zinc chloride pulse now contains about 20 times more zinc chlo ride.

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• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Chemical & Material Sciences (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Manufacturing & Machinery (AREA)
• Crystallography & Structural Chemistry (AREA)
• Organic Chemistry (AREA)
• Metallurgy (AREA)
• Materials Engineering (AREA)
• Inorganic Chemistry (AREA)
• Electroluminescent Light Sources (AREA)
• Chemical Vapour Deposition (AREA)

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Applications Claiming Priority (2)

Publications (1)

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ID=8529054

Family Applications (1)

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Citations (3)

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• 1989
  • 1989-09-26 FI FI894534A patent/FI83721C/sv not_active IP Right Cessation
• 1990
  • 1990-09-17 JP JP51260890A patent/JPH05500385A/ja active Pending
  • 1990-09-17 WO PCT/FI1990/000218 patent/WO1991005028A1/en active Application Filing
  • 1990-09-17 DE DE19904091748 patent/DE4091748T/de not_active Withdrawn
  • 1990-09-24 FR FR9011754A patent/FR2652358B1/fr not_active Expired - Fee Related
• 1992
  • 1992-03-10 GB GB9205180A patent/GB2252450B/en not_active Expired - Fee Related

Patent Citations (3)

Non-Patent Citations (1)

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