GB2252450B - Doping method - Google Patents

Doping method

Info

Publication number
GB2252450B
GB2252450B GB9205180A GB9205180A GB2252450B GB 2252450 B GB2252450 B GB 2252450B GB 9205180 A GB9205180 A GB 9205180A GB 9205180 A GB9205180 A GB 9205180A GB 2252450 B GB2252450 B GB 2252450B
Authority
GB
United Kingdom
Prior art keywords
doping method
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9205180A
Other languages
English (en)
Other versions
GB2252450A (en
GB9205180D0 (en
Inventor
Jaakko Hyvarinen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EPISYSTEMS Ltd Oy
Original Assignee
EPISYSTEMS Ltd Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EPISYSTEMS Ltd Oy filed Critical EPISYSTEMS Ltd Oy
Publication of GB9205180D0 publication Critical patent/GB9205180D0/en
Publication of GB2252450A publication Critical patent/GB2252450A/en
Application granted granted Critical
Publication of GB2252450B publication Critical patent/GB2252450B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical Vapour Deposition (AREA)
GB9205180A 1989-09-26 1992-03-10 Doping method Expired - Fee Related GB2252450B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI894534A FI83721C (sv) 1989-09-26 1989-09-26 Dopningsförfarande
PCT/FI1990/000218 WO1991005028A1 (en) 1989-09-26 1990-09-17 Doping method

Publications (3)

Publication Number Publication Date
GB9205180D0 GB9205180D0 (en) 1992-05-13
GB2252450A GB2252450A (en) 1992-08-05
GB2252450B true GB2252450B (en) 1993-01-20

Family

ID=8529054

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9205180A Expired - Fee Related GB2252450B (en) 1989-09-26 1992-03-10 Doping method

Country Status (6)

Country Link
JP (1) JPH05500385A (sv)
DE (1) DE4091748T (sv)
FI (1) FI83721C (sv)
FR (1) FR2652358B1 (sv)
GB (1) GB2252450B (sv)
WO (1) WO1991005028A1 (sv)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103897692A (zh) * 2014-03-31 2014-07-02 中国科学院上海光学精密机械研究所 过渡金属离子浓度渐变掺杂硫化锌或硒化锌及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3984586A (en) * 1973-07-31 1976-10-05 Matsushita Electric Industrial Co., Ltd. Method of making a manganese-activated zinc sulphide electroluminescent powder
GB2047462A (en) * 1979-04-20 1980-11-26 Thomas J Method of manufacturing thin film electroluminescent devices
JPS58157886A (ja) * 1982-03-16 1983-09-20 Matsushita Electric Ind Co Ltd 螢光体薄膜の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4389973A (en) * 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
JPS6287487A (ja) * 1985-10-14 1987-04-21 Sharp Corp 不純物ド−プ単結晶形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3984586A (en) * 1973-07-31 1976-10-05 Matsushita Electric Industrial Co., Ltd. Method of making a manganese-activated zinc sulphide electroluminescent powder
GB2047462A (en) * 1979-04-20 1980-11-26 Thomas J Method of manufacturing thin film electroluminescent devices
JPS58157886A (ja) * 1982-03-16 1983-09-20 Matsushita Electric Ind Co Ltd 螢光体薄膜の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103897692A (zh) * 2014-03-31 2014-07-02 中国科学院上海光学精密机械研究所 过渡金属离子浓度渐变掺杂硫化锌或硒化锌及其制备方法

Also Published As

Publication number Publication date
FI83721C (sv) 1993-11-22
GB2252450A (en) 1992-08-05
WO1991005028A1 (en) 1991-04-18
GB9205180D0 (en) 1992-05-13
JPH05500385A (ja) 1993-01-28
FI83721B (fi) 1991-04-30
FI894534A0 (fi) 1989-09-26
FR2652358B1 (fr) 1993-09-03
FR2652358A1 (fr) 1991-03-29
DE4091748T (sv) 1992-08-27

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940917