Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W42/00—Arrangements for protection of devices
  • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields

Definitions

• This disclosure relates to electrostatic dischar protection circuits (ESD protection circuits) f integrated circuit chips.
• ESD protection circuits electrostatic dischar protection circuits
• lar metal pads are provided on which discrete wires are bond to thereby provide a means whereby input signals can sent to and output signals received from the chip.
• Tho signals under normal operating conditions, are restrict to lie within a certain voltage range.
• th voltage range is ⁇ 5 volts, or even smaller.
• the voltage on the pads can, for short time period (e.g., a few nanoseconds), become 1,0 volts or higher.
• Such electrostatic charge first accumulates one's body.
• a simple circuit which approximates t equivalent circuit for the human body, is a 100 pico'far capacitor in series with a 1,500 ohm resistor.
• a charge of just 1X10" 7 Coulu b's of charge on thi capacitor the voltage across it becomes 1,000 volts.
• Thi amount of charge, either positive or negative, can readil be accumulated on the human body. Thereafter the charg will be transferred to a pad when the person contact either the pad, or a wire to which the pad is connected with a probe.
• protection circuits all occupy at least some chip spac which detracts from the space which is available for th remaining circuitry on the chip. Consequently, there is tendency to reduce the size of the components which make u the input protection circuitry. But that in turn decrease the current-carrying capacity and increases the memori resistance of the input protection components. This the presents a real dilemma, - if the components are made t small, they will burn out; and if they are made too larg they will occupy too much chip space. Further, the pri art protection circuitry, as will be shown in detail late is not located where the electrostatic charge tends accumulate, and so its effectiveness in removing th charge is reduced.
• an integrat circuit chip having improved static discharge protecti comprises a semiconductor substrate with a major surface, plurality of transistors that are integrated into t surface, patterned conductors that interconnect the tra sistors and route input signals to the transistors, wi the patterned conductors including metal pads for receivi the input signals from an external source; wherein t improvement comprises respective diodes which are int grated into the surface directly beneath the metal pad and which connect the pads to the substrate and condu electrostatic charge therebetween.
• the diodes can large since the metal pads are inherently large enough receive a bonding wire; and thus the diodes have a lar current-carrying capacity and a small series resistanc
• the metal pads have sharp corners of 90° less which tend to accumulate any electrostatic charge
• a the diodes are disposed beneath the metal pads at the corners. Since the diodes are located where the char tends to accumulate, they are more effective in dissipati that charge than if they were located elsewhere.
• FIG. 1 shows a preferred embodiment
• FIG. 2 illustrates how the FIG. 1 embodiment accu mulates electrostatic charge in certain regions and ther dissipates that charge
• FIG. 3 shows the results of a computer simulatio of the operation of the FIG . 1 embodiment
• FIGs . 4A-4F are greatly enlarged sectional view which illustrate a process for fabricating the FIG . embodiment ;
• FIG. 5 illustrates a modif ied version of the FIG 1 embodiment
• FIG. 6 is a sectional view along lines ' 6-6 of FIG 5.
• reference numeral 10 indicates a logic gate which comprised of three bipolar transistors 11 thru 13, t resistors 14 and 15, and a current source 16. All of the components 11 thru 16 are integrated into the surface of single semiconductor chip, and there they are interco nected as shown by patterned conductors. One of tho conductors 17 goes from the base of transistor 11 to a re tangular metal bonding pad 18 which also is the chip. P 18 provides a contact whereby an input signal from a sour external to the chip can be applied to logic gate 10.
• the inp signal on pad 18 is restricted to lie within a certa predetermined voltage range such as -0.8 volts and -1 volts.
• a certa predetermined voltage range such as -0.8 volts and -1 volts.
• curre from the current source 16 passes through transistor 1 and so the output voltage of transistor 13 is hig
• current from the current source 16 passes throu transistor 12 and so the output voltage of transistor 13 low.
• electrostatic charge on ' the order of 1 X 10 ⁇ Coulomb's can be deposited on pad 18 and thereby signifi cantly raise or lower the pad's voltage. That charge, i allowed to pass down conductor 17 through transistor 11 can burn out the transistor.
• the diodes 19-2 In operation, when a- large negative charge i electrostatically deposited on pad 18, the diodes 19-2 become forward biased and conduct this charge to th substrate. Conversely, when a large positive charge i electrostatically deposited on pad 18, the diodes 19-2 break down and conduct this charge to the substrate.
• power supply (not shown) is always used to provide a D bias voltage to the substrate of an integrated circui chip, and that supply also removes the electrostatic charg from the substrate.
• the diodes 19-22 take no additional chip spa.ce ove that which would otherwise be used if no static discharg protection were provided at all. This is significan because chip space is at premium. Frequently it i desirable to be able to put as many logic gates as possibl on a chip, and adding static discharge protection circuit external to pad 18 hinders that objective since both th protection circuitry and its interconnections to the pa take valuable chip space.
• the diodes 19-22 can be made very large since t pad 18 is forced to be large. That pad must be at least wide as a bonding wire, which always is at least 50 micro ⁇ meters by 50 micrometers so that it doesn ' t break .
• each of the diodes 19-22 is at least ten micro ⁇ meters by ten micrometers (whereas one bipolar transistor is typically only two micrometers by four micrometers ) . It is important that the diodes 19-22 not be too small since their current-carrying capacity is proportional to their cross-sectional area , and their series resistance is inversely proportional to their cross-sectional area. Diodes which are too small will burn out and/or force current through trans istor 11 due to their series res istance .
• the diodes 19-22 are located at sharp corners , and that is where electrostatic charge tends to accumulate . That is the principle of the lightning rod.
• the diodes are more effective in removing the charge than if they were simply located external to pad 18 an attached to conductor 17 .
• FIG. wherein electric f ield lines 23 are mapped at the corner of the pad 18 . These field lines tend to crowd at th corners , and charge density is inversely proportional t the distance between the f ield lines .
• FIG 3 the results of a compute simulation of the FIG. 1 circuit will be described .
• SPICE publicly available computer progra called SPICE.
• Resistors 14 and 15 were set at I ohms each; current source 16 had a 500 ohm res istance t
• transistors 11 and 12 each had a 500 ohm paras iti collector-substrate resistance ; and the series res istanc of each of the four diodes 19-22 was set at 80 ohms ; an the paras itic capacitance of pad 18 was 5 picofarad .
• electrostatic charge was depos ited o pad 18 through a 1,500 ohm resistor from a 100 picofarad capacitor which was charged to 1,000 volts. (This circuit, as was explained in the Background, simulates the human body. )
• curve 30a shows the current in milli- amps which passes through the four diodes 19-22; whereas curve 30b shows the current which passes into the base of transistor 11.
• curve 31 shows the current which passes through the base of transistor 11 when the diodes 19-22 are eliminated.
• a comparison of curve 31 with 30b shows that the diodes 19-22 reduce the electro ⁇ static discharge current through transistor 11 by over 70%.
• FIG. 1 circui was simulated with the diodes 19-22 removed and replace with a single 80 ohm diode which was located outside of pa 18 and connected to conductor 17.
• Curve 33a shows th current through the base of transistor 11 which thi simulation produced; whereas curve 33b shows the curren through the single diode.
• the two currents are abou equal, and conduction occurs through the diode an transistor 11 at above the same time since neither one i located where the charge accumulates.
• FIGs 4A-4F a preferred process for fabricating the FIG 1 structure will be described in conjunction with FIGs 4A-4F. This process begins with a P ⁇ substrate 40 on whic a mask 41 is disposed which defines the N + active region 42 for all of the transistors. All of the regions 42 ar doped N + through mask 41 as indicated in FIG. 4A.
• anothe mask 43 is disposed o substrate 40 which defines both the channel stop regions 4 that isolate the transistor regions 42 from each other, an the P 4 " regions 45 for all of the diodes 19-22.
• Thes regions 44 and 45 are doped P + through mask 43 as shown i FIG. 4B.
• an N ⁇ doped epilayer 46 is forme over the entire substrate as shown in FIG. 4C.
• Thi epilayer is then patterned by a mask 47 as shown in FIG. 4 such that one portion 46a of the epilayer remains over th collector region of each transistor, another portion 46 remains over the emitter and base region of each tran sistor, and another portion 46c remains over each of th diodes 19-22.
• field oxide 48 is grown between th regions 46a, 46b, and 46c; and FIG. 4E shows the result o this step.
• another mask 49 is disposed o the FIG. 4E structure which exposes just the collecto region 46a of each transistor and the diode regions 46c These regions, as shown in FIG. 4F, are then doped N ⁇ .
• the junctions in the diodes 19-22 inherently are heavi doped. This is because the channel stop regions a collector regions, which are simultaneously formed with t diodes, must be heavily doped to respectively provide go isolation and low resistance. But in the diodes 19-22, t heavy doping produces a low breakdown voltage, since brea down voltage is inversely proportional to dopi concentration. Consequently, the diodes protect the inp transistor from both positive and negative charge.
• sever additional diodes 60 can be added between the four corn diodes 19-22 along the perimeter of pad 18.
• Each of the diodes 60 would be made of a P + region 45 and N + region 4 just like the diodes 19-22.
• One feature of these add tional diodes 60 is that they will lower the seri resistance, and increase the current capacity, over t four corner diodes 19-22.
• the diodes 60 wi provide many sharp edges in their N + P + junctions, such edge 61 in FIG. 4F. This is important because breakdo tends to occur at the sharp edges 61.
• gate 10 can be any conventional logic gate which is made of PNP transistors, NMOS transistors, or CMOS transistors. In the case of PNP transistors, all N type doping in FIGs. 4A-4F would become p type, and vice versa.
• pads 18 can have solder bumps on them which are of a type that enables the chip to be attached to another substrate and receive input signals from it without any discrete wires between the two.

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• Semiconductor Integrated Circuits (AREA)
• Bipolar Integrated Circuits (AREA)

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• 1987
  • 1987-10-19 US US07/109,942 patent/US4750081A/en not_active Expired - Lifetime
• 1988
  • 1988-10-11 JP JP63509128A patent/JPH02501696A/ja active Granted
  • 1988-10-11 EP EP88909949A patent/EP0335965B1/en not_active Expired - Lifetime
  • 1988-10-11 DE DE3887873T patent/DE3887873T2/de not_active Expired - Fee Related
  • 1988-10-11 WO PCT/US1988/003448 patent/WO1989004059A1/en not_active Ceased

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