Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3411—Constructional aspects of the reactor
  • H01J37/3444—Associated circuits
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Definitions

• the present invention relates to a helical 0 jitter Li in g apparatus causes generating a thin film seed s of the material on the surface of the treatment embedding material.
• Reference numeral 1 denotes a vacuum vessel serving as an earth electrode, and gas such as argon is supplied to and discharged from the vacuum vessel 1 through needle valves 2 and 3.
• the substrate holder 6 holding A is accommodated.
• a high-frequency voltage is applied between the vacuum vessel 1 and the target 5 (cathode 4) and between the vacuum vessel 1 and the material A (substrate holder 6) by the power supply device. .
• the power supply unit consists of a high-frequency power supply 10 composed of an oscillator and an amplifier that amplifies the output to a predetermined size, and an output of the high-frequency power supply 10 connected to the same cable or the like.
• High lap The impedance provided through the wave cable 11 is adjusted to adjust the impedance between the vacuum vessel 1 and the target (cathode 4:), and between the vacuum vessel 1 and the forest A to be treated.
• a matching circuit 12 for applying a predetermined high-frequency voltage is provided between each of the (substrate holders 6).
• the matching circuit 12 includes matching capacitors 13 and 14, a coil 15 for dividing the output of the high-frequency power supply 10, and a DC cutoff capacitor.
• capacitors 16 and 17, which are housed and sealed in a matching box 18 to prevent high frequency leakage.
• the capacitors 13 and 14 and the coil 15 match the impedance of the input side and the output side as viewed from the input terminal of the matching circuit 12.
• Discharge c. The coil 15 is adjusted so that the maximum value is maximized.
• the coil 15 is formed by changing the impedance ratio, thereby changing the potential of the cathode 4 and the potential of the substrate holder 6.
• the potential V 2 is set so that V ⁇ > V 2 and a predetermined potential difference.
• a high-frequency power meter 20 is read on the high-frequency cable 11, and a voltmeter 21, for a self-pulse voltage monitor is provided on the output side of the matching circuit 12. 2 2 is connected.
• the high-frequency power supply 10 is turned on, and a predetermined potential difference between the cathode 4 and the substrate holder 6 is observed while watching the voltmeters 21 and 22. That is, the impedance of the coil 15 is adjusted so that the power applied to the cathode 4 is larger than the power applied to the substrate holder 6 by a predetermined value, and the power meter is used. Discharge while watching 20 C. Adjust the capacitance of capacitors 13 and 14 so that the maximum value is obtained, and adjust the distance between the target (cathode 4) and the vacuum container.
• the high-frequency power output from the high-frequency power supply 10 can be measured by the wattmeter 20, but the high-frequency power applied to the cathode 4. Since it is not possible to separately measure the height of the workpiece A and the height of the wafer that has been put into the substrate holder 6, a matching circuit is required each time the shape and size of the workpiece A differ. Capacitors 13, 14 and coil 15 in 12 must be readjusted to provide optimal power to cathode 4 and substrate holder 6. As a result, the control and design of the equipment such as adjustment work becomes trial and error, resulting in poor reproducibility. There was a drawback that it became a clothing. In other words, the dust 5 and the material A to be treated are both ash. However, it is difficult to form a thin film of a predetermined thickness on the surface of the material to be treated A by precisely controlling the amount. .
• the cathode 4 and the substrate holder are connected by voltmeters 21 and 22 connected to the output side of the matching circuit 12.
• the self-bias voltage applied to the cathode 6 and the substrate holder 6 is determined based on the measured value. It is also conceivable to determine the capacities of capacitors 13, 14 and coil 15. In this method, the relationship between the self-power, the bias voltage, and the input power is sharp.
• the measured value of the self-bias voltage is only a guide because it greatly changes depending on the pressure of the head, the structure of the cathode 4 as an electrode, and the structure of the substrate hologram 6. It is also conceivable to connect a high-frequency power meter to the output side of the matching circuit 12 and directly measure the power input to the cathode 4 and the substrate holder 6. However, in this method, the characteristic influence of the power measurement point is obtained.
• the invention was made in order to eliminate the above-mentioned drawbacks of the prior art, so that the reproducibility of the cathode on the target side and the substrate holder on the material to be implanted were independently independent of each other.
• the cathode and the base holder have a high circumference.
• the power supply that supplies K power is an oscillator.
• OMPI First and second amplifiers for amplifying the output of this oscillator to a predetermined size, and a coil and a coil provided with the output of the first amplifier via a first high-frequency cable. Inhibit by the capacitor.
• a first matching circuit for applying a predetermined high-frequency voltage between the substrate holder and the vacuum container by adjusting one dance, and an output of the second amplifier being a second matching circuit.
• the output of one oscillator is connected to a first intensifier, a first high-frequency cable to which a first power meter is read, and a first matching circuit.
• a second high-frequency cable to which a second power meter is connected To the substrate holder via a second amplifier, a second high-frequency cable to which a second power meter is connected, and a cathode via a second matching circuit.
• the first and second wattmeters allow accurate measurement of the high-frequency power applied to the substrate holder and cathode, and the specified high-frequency power is applied to the substrate holder and cathode. Can be supplied independently and with good reproducibility.
• the high-frequency power is supplied to the substrate holder and the cathode using the output of one oscillator, the frequencies of the two high-frequency powers become the same, thereby the first and second high-frequency powers are supplied. Inhibition due to the matching circuit.
• One-dense discipline can be performed simply and accurately. Therefore, a thin film of a predetermined thickness is formed on the surface of the material to be treated with high accuracy.
• FIG. 1 shows the conventional sha.
• FIG. 2 is a schematic configuration diagram of a sputtering device, and FIG. 2 is a shutter according to an embodiment of the present invention.
• FIG. 3 is an explanatory diagram of the operation of FIG. 2, and
• FIG. 411 is a shutter showing the high-frequency power supply in FIG. 2 in detail. This is a sputtering device.
• FIG. 2 shows the shutter according to this embodiment.
• FIG. 2 is a diagram illustrating the configuration of the Yuttayu of the butterfly device. This sha.
• the difference between the hitting apparatus and the apparatus shown in FIG. 1 is that two high-frequency power sources 10 i and 102 are provided and the high-frequency power is supplied to the cathode 4 and the substrate holder 6 independently. And so on.
• the power supply device shown in FIG. 2 includes first and second high-frequency power supplies 10 ⁇ and 1 ⁇ ⁇ 2 each including an oscillator and a vibrator for increasing the output of the oscillator to a predetermined size.
• first and second high-frequency power source 1 0 i, 1 0 2 outputs same occupation Ke one pull and whether Ranaru first respectively second high-frequency Ke - ⁇ via b le 1 1, 1 1 2 first and second Ma pitch in g circuits 1 2, 1 2 2 Ru given.
• the first matching circuit 12I is composed of a matching capacitor 13 ⁇ and a coil 15! And a DC blocking connector
• the power meter, a high-frequency power source Ri by the 2 0 2 can be measured 1 0 2 of outputs can supply predetermined high frequency power to independently cathode 4 and the substrate ho le da 6, Capacitors 13 1, 13, and 13 in the matching circuits 12, 12 2 for optimal power input according to the shape and size of the workpiece A, etc.
• the adjustment work of the coils 15 ⁇ and 15 becomes easy-and the high frequency power supply 1 is used to facilitate the adjustment of the impedance by the matching circuit 122. It is desired that the output frequency of O i and 102 be the same.
• the high-frequency power supply 100 i and the oscillator of the high-frequency power supply 102 are commonly used to constitute the high-frequency power supply 100. That is, this high-frequency power supply 100 is composed of an oscillator 101 composed of a crystal oscillation circuit and the like, and first and second output controllers 102 composed of a resistor adjusting the amplitude of the output waveform of the oscillator. , 103, and first and second amplifiers 104, 105 that amplify the outputs of the first and second output controllers 102, 103, respectively. . In the high-frequency power supply 100 having such a configuration, the output signal of one oscillator 101 is transmitted through one ffi-force controller 102 and the first amplifier 104.
• High frequency shower according to the present invention.
• Substrates in a sputtering device The applied power to each of the holder and the cathode can be measured accurately, and at the same time, the applied power can be adjusted easily and accurately to form a thin film of the desired thickness with high accuracy.
• the processing efficiency is greatly improved, and productivity can be increased.

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• Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• Plasma & Fusion (AREA)
• Chemical & Material Sciences (AREA)
• Analytical Chemistry (AREA)
• Physical Vapour Deposition (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=15905113

Family Applications (1)

Country Status (2)

Families Citing this family (3)

Citations (3)

• 1983
  • 1983-09-14 JP JP17044883A patent/JPS6063367A/ja active Granted
• 1984
  • 1984-09-13 WO PCT/JP1984/000442 patent/WO1985001301A1/ja unknown

Patent Citations (3)

Non-Patent Citations (1)

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